CN112608741A - Quantum dot light-emitting field effect transistor, preparation method thereof and display panel - Google Patents

Quantum dot light-emitting field effect transistor, preparation method thereof and display panel Download PDF

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Publication number
CN112608741A
CN112608741A CN202011483712.5A CN202011483712A CN112608741A CN 112608741 A CN112608741 A CN 112608741A CN 202011483712 A CN202011483712 A CN 202011483712A CN 112608741 A CN112608741 A CN 112608741A
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quantum dot
dot light
field effect
effect transistor
emitting
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庞超
龚政
胡诗犇
陈志涛
郭婵
王建太
刘久澄
潘章旭
龚岩芬
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Institute of Semiconductors of Guangdong Academy of Sciences
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/62—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing gallium, indium or thallium
    • C09K11/621—Chalcogenides
    • C09K11/623—Chalcogenides with zinc or cadmium
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Abstract

The embodiment of the invention provides a quantum dot light-emitting field effect transistor, a preparation method thereof and a display panel, belonging to the technical field of photoelectricityIncluding CuInS2And ZnS, ZnS coated CuInS2To form a core-shell structure. The preparation method of the quantum dot light-emitting field effect transistor is used for preparing the quantum dot light-emitting field effect transistor. The display panel comprises the quantum dot light-emitting field effect transistor. The quantum dot light emitting layer of the quantum dot light field effect transistor provided by the embodiment of the invention adopts ZnS to coat CuInS2The formed core-shell structure does not contain elements such as cadmium, lead and the like which have great influence on the environment, so that the core-shell structure is green and environment-friendly and can be applied in a large scale. Correspondingly, the display panel adopting the quantum dot light-emitting field effect transistor as the light source also has the characteristics of environmental protection and contribution to realizing large-scale application.

Description

Quantum dot light-emitting field effect transistor, preparation method thereof and display panel
Technical Field
The invention relates to the technical field of photoelectricity, in particular to a quantum dot light-emitting field effect transistor, a preparation method of the quantum dot light-emitting field effect transistor and a display panel.
Background
The quantum dot light-emitting field effect transistor has special photoelectric performance, switching capacity of the field effect transistor and electroluminescence characteristics of the light-emitting diode, and is considered to be a novel display device with great development prospect.
However, the quantum dot materials used in the current quantum dot light-emitting field effect transistors all contain elements such as cadmium and lead which have a particularly large influence on the environment, so that the application scale is limited.
Disclosure of Invention
The invention aims to provide a quantum dot light-emitting field effect transistor, a preparation method of the quantum dot light-emitting field effect transistor and a display panel, wherein a quantum dot light-emitting layer of the quantum dot light-emitting field effect transistor adopts elements which do not contain cadmium, lead and the like and have great influence on the environment, the quantum dot light-emitting layer is green and environment-friendly, and large-scale application can be realized.
Embodiments of the invention may be implemented as follows:
in a first aspect, the present invention provides a quantum dot light-field effect transistor comprising a quantum dot light-emitting layer, the material of the quantum dot light-emitting layer comprising CuInS2And ZnS coating the CuInS2To form a core-shell structure.
In an optional embodiment, the device further includes a substrate, a gate, an insulating layer, an electron transport layer, a hole injection layer, and source and drain electrodes, where the substrate, the gate, the insulating layer, the electron transport layer, the quantum dot light emitting layer, the hole transport layer, the hole injection layer, and the source and drain electrodes are sequentially disposed from bottom to top.
In an alternative embodiment, the material of the gate electrode includes Al or Al: and Nd.
In an alternative embodiment, the material of the insulating layer comprises Al2O3Or Al2O3：Nd。
In an alternative embodiment, the material of the electron transport layer comprises IGZO.
In an alternative embodiment, the material of the hole transport layer includes at least one of PVK, Poly-TPD, and TFB.
In an alternative embodiment, the material of the hole injection layer comprises at least one of PMAH, TPD and NPB.
In an alternative embodiment, the material of the source and drain electrodes includes at least one of Au, Au alloy, Pt, and Pt alloy.
In a second aspect, the present invention provides a method for manufacturing a quantum dot light emitting field effect transistor, including: using CuInS2And ZnS is used for preparing a quantum dot light emitting layer of the quantum dot light field effect transistor, wherein the ZnS coats the CuInS2To form a core-shell structure.
In a third aspect, the present invention provides a display panel, including the quantum dot light-emitting field effect transistor described in any one of the foregoing embodiments or a quantum dot light-emitting field effect transistor manufactured by the method for manufacturing the quantum dot light-emitting field effect transistor described in the foregoing embodiments.
The beneficial effects of the embodiment of the invention include, for example:
the quantum dot light emitting layer of the quantum dot light field effect transistor provided by the embodiment of the invention adopts ZnS to coat the CuInS2The formed core-shell structure does not contain elements such as cadmium, lead and the like which have great influence on the environment, so that the core-shell structure is green and environment-friendly and can be applied in a large scale.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.
Fig. 1 is a schematic structural diagram of a qd-fet according to a first embodiment of the present invention;
fig. 2 is a block diagram illustrating steps of a method for manufacturing a qd-fet according to a second embodiment of the present invention;
fig. 3 to fig. 9 are process flow diagrams of a manufacturing method of a quantum dot light-emitting field effect transistor according to a second embodiment of the present invention.
Icon: 10-quantum dot light-field effect transistor; 100-a substrate; 200-a gate; 300-an insulating layer; 400-electron transport layer; 500-a quantum dot light emitting layer; 600-a hole transport layer; 700-a hole injection layer; 800-source drain electrodes; 810-source electrode; 820-drain.
Detailed Description
The quantum dot light-emitting field effect transistor has special photoelectric performance, switching capacity of the field effect transistor and electroluminescence characteristics of the light-emitting diode, and is considered to be a novel display device with great development prospect. Compared with the traditional photoelectric device, the quantum dot light-emitting field effect transistor is a relatively new device structure and has important scientific research value in researching the transmission characteristic of a carrier and the light emission of an exciton. Meanwhile, the quantum dot light-emitting field effect transistor has the characteristics of high current density, low metal electrode absorption loss and the like, and compared with the flat panel display technology of an organic light-emitting diode or a quantum dot light-emitting diode, the flat panel display technology based on the quantum dot light-emitting field effect transistor has a simpler process flow and higher integration level, the panel preparation cost can be greatly reduced, the yield and the overall performance of the panel are improved, and the flat panel display technology is regarded as a powerful competitor of the next-generation flat panel display technology.
However, the quantum dot materials of the current quantum dot light-emitting field effect transistor all contain heavy metal elements such as cadmium and lead, which greatly affects the environment, and the application scale of the transistor is limited.
In view of the above situation, the embodiments of the present invention provide a new quantum dot light-emitting field effect transistor, and the quantum dot light-emitting layer of the transistor does not contain elements such as cadmium and lead which are not friendly to the environment, so that the transistor is green and environment-friendly, and is beneficial to large-scale application.
Since embodiments of the present invention involve the selection of a large number of materials, a Chinese look-up table of the following chemical formula is provided for reference:
Figure BDA0002838346980000031
Figure BDA0002838346980000041
in order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.
In the description of the present invention, it should be noted that if the terms "upper", "lower", "inside", "outside", etc. indicate an orientation or a positional relationship based on that shown in the drawings or that the product of the present invention is used as it is, this is only for convenience of description and simplification of the description, and it does not indicate or imply that the device or the element referred to must have a specific orientation, be constructed in a specific orientation, and be operated, and thus should not be construed as limiting the present invention.
Furthermore, the appearances of the terms "first," "second," and the like, if any, are used solely to distinguish one from another and are not to be construed as indicating or implying relative importance.
It should be noted that the features of the embodiments of the present invention may be combined with each other without conflict.
The first embodiment:
referring to fig. 1, the present invention provides a quantum dot light emitting field effect transistor 10, which includes a quantum dot light emitting layer 500, wherein a material of the quantum dot light emitting layer 500 includes CuInS2And ZnS, ZnS coated CuInS2To form a core-shell structure.
Coating CuInS with ZnS2The formed quantum dot material with the core-shell structure does not contain elements such as cadmium, lead and the like which are not friendly to the environment, is green and environment-friendly, is beneficial to realizing large-scale application, has the luminous efficiency of 70-81 percent and the emission wavelength of 550-700 nm, and is high in luminous efficiencyThe semiconductor quantum dot material with the performance can ensure that the quantum dot light-emitting device has longer service life and higher working stability while having high brightness and high efficiency.
Further, in addition to the quantum dot light emitting layer 500, the quantum dot light field effect transistor 10 further includes a substrate 100, a gate electrode 200, an insulating layer 300, an electron transport layer 400, a hole transport layer 600, a hole injection layer 700, and a source-drain electrode 800. The substrate 100, the gate 200, the insulating layer 300, the electron transport layer 400, the quantum dot light emitting layer 500, the hole transport layer 600, the hole injection layer 700, and the source-drain electrode 800 are sequentially disposed from bottom to top. The source-drain electrode 800 specifically includes a source 810 and a drain 820. The source 810 and the drain 820 are spaced apart from each other on the surface of the hole injection layer 700 facing away from the hole transport layer 600.
In detail, the above-mentioned hierarchical structures except the quantum dot light emitting layer 500 may be made of different materials according to needs, and in this embodiment, the substrate 100 is made of transparent glass. In other embodiments, the substrate 100 may also be Al2O3Si or SiC, etc.
The material of the gate electrode 200 includes Al or Al: and Nd. In this embodiment, the material of the gate electrode 200 includes Al. In other embodiments, the material of the gate 200 may also include Al: and Nd.
The material of the insulating layer 300 includes Al2O3Or Al2O3: and Nd. In this embodiment, the material of the insulating layer 300 includes Al2O3. In other embodiments, the material of the insulating layer 300 may also include Al2O3：Nd。
The material of the electron transport layer 400 includes IGZO.
The material of the hole transport layer 600 includes at least one of PVK, Poly-TPD, and TFB. In this embodiment, the material of the hole transport layer 600 includes PVK. In other embodiments, the material of the hole transport layer 600 may also include Poly-TPD, TFB, a combination of PVK and Poly-TPD, a combination of Poly-TPD and TFB, a combination of PVK and TFB, or a combination of PVK, Poly-TPD and TFB.
The material of the hole injection layer 700 includes at least one of PMAH, TPD and NPB. In this embodiment, the material of the hole injection layer 700 includes PMAH. In other embodiments, the materials of hole injection layer 700 may also include TPD, NPB, a combination of PMAH and TPD, a combination of TPD and NPB, a combination of PMAH and NPB, or a combination of PMAH, TPD and NPB.
The material of the source-drain electrode 800 includes at least one of Au, Au alloy, Pt, and Pt alloy. In this embodiment, the source/drain electrodes 800 are made of Au. In other embodiments, the source/drain electrodes 800 may also be made of Au alloy, Pt alloy, Au and Au alloy combination, Au and Pt alloy combination, or Au, Au alloy, Pt and Pt alloy combination.
The working principle of the quantum dot light-emitting field effect transistor 10 of the present invention is as follows: under the condition that the source-drain electrode 800 and the gate 200 are electrified to generate voltage, electrons and holes respectively enter the quantum dot light-emitting layer 500 through the electron transport layer 400 and the hole transport layer 600, and the electrons and the holes are combined in the quantum dot light-emitting layer 500 and radiate energy to impact the quantum dot material of the quantum dot light-emitting layer 500, so that the quantum dot material emits light.
The quantum dot light-emitting field effect transistor provided by the embodiment of the invention has the following advantages and beneficial effects: 1. in the quantum dot light-emitting field effect transistor 10 according to the embodiment of the present invention, the quantum dot light-emitting layer 500 does not contain heavy metal elements such as cadmium and lead, and is a novel high-performance semiconductor quantum dot material that is friendly to the environment, so that the quantum dot light-emitting device has the characteristics of long service life and high stability while having high luminance and high efficiency.
2. According to the quantum dot light-emitting field effect transistor 10, the interfaces of the electron transport layer 400, the quantum dot light-emitting layer 500, the hole transport layer 600 and the hole injection layer 700 are subjected to material and structure matching design, so that a hole injection barrier between the hole transport layer 600 and the quantum dot light-emitting layer 500 is reduced, the hole injection efficiency is improved, the non-radiative recombination is reduced, and the light-emitting efficiency of the quantum dot light-emitting field effect transistor 10 is remarkably improved.
3. The quantum dot light-emitting field effect transistor 10 of the embodiment of the invention can be used as a high-performance display device and a pixel switch with large size, high resolution and high refresh rate, can effectively reduce impedance delay of an array due to the characteristics of high mobility and low resistivity, can work under low driving voltage, reduces working energy consumption, and has the advantages of environmental protection and energy saving.
Second embodiment:
referring to fig. 2, an embodiment of the invention provides a method for manufacturing a qd-fet 10, which can be used to manufacture the qd-fet 10 provided in the first embodiment. The preparation method comprises the following steps:
step S100: a substrate 100 is prepared. In detail, a transparent glass is used as the substrate 100, and the transparent glass is subjected to cleaning and drying pretreatment to obtain a device as shown in fig. 3.
Step S200: the gate electrode 200 is fabricated on the substrate 100. In detail, the gate electrode 200 is deposited on the pretreated transparent glass by a magnetron sputtering deposition method, an Al thin film with a predetermined thickness (for example, 300nm) is deposited on the transparent glass by direct current sputtering and wet etching as the gate electrode 200, and the gate electrode is patterned by wet etching, so as to obtain the device shown in fig. 4.
Step S300: an insulating layer 300 is prepared on the gate electrode 200. In detail, the insulating layer 300 is prepared on the surface of the gate electrode 200 by an anodic oxidation method, and patterned. Forming a layer of Al with a predetermined thickness (e.g., 200nm) on the surface of the gate 200 by using a chemical anodization method2O3The film serves as an insulating layer 300 to obtain a device as shown in fig. 5.
Step S400: an electron transport layer 400 is prepared on the insulating layer 300. In detail, the electron transit layer 400 is continuously prepared on the insulating layer 300 by the magnetron sputtering method, and annealing treatment is performed to avoid stress concentration inside the electron transit layer 400. An IGZO thin film of a predetermined thickness (for example, 20nm) is formed as an electron transport layer 400 on the upper surface of the insulating layer 300 by rf magnetron sputtering at room temperature, and patterned by a metal mask, followed by annealing treatment in an air atmosphere at 400 c for 60 minutes to obtain a device as shown in fig. 6.
Step S500: a quantum dot light emitting layer 500 is prepared on the electron transport layer 400. In detail, the quantum dot light emitting layer 500 of the quantum dot light-emitting field effect transistor 10 is prepared using CuInS2 and ZnS, wherein the ZnS coats CuInS2 to form a core-shell structure. In detail, the quantum dot light emitting layer 500 is continuously prepared on the electron transport layer 400 after the annealing process is completed by a solution spin coating method, and the annealing process is performed to prevent stress concentration inside the quantum dot light emitting layer 500. The device with the electron transport layer 400 completed in step S400 is transferred to a nitrogen glove box, and is spin-coated with an ethanol solution of CuInS2/ZnS (core-shell structure formed by coating CuInS2 with ZnS) quantum dots with a concentration of 20mg/mL at a rotation speed of 2000 rpm for 40S, and after the spin-coating is completed, annealing is performed at 90 ℃ for 10min to obtain a CuInS2/ZnS quantum dot thin film with a predetermined thickness (for example, 25nm) as the quantum dot light emitting layer 500, so as to obtain the device shown in fig. 7.
Step S600: a hole transport layer 600 is prepared on the quantum dot light emitting layer 500. In detail, the hole transport layer 600 is continuously prepared on the quantum dot light emitting layer 500 on which the annealing process is completed in step S500 by the solution spin coating method, and the annealing process is performed to avoid stress concentration inside the hole transport layer 600. PVK is used as a solute, 1, 4-dioxin is used as a solvent, and the concentration of a prepared solution is 8 mg/mL. And spin-coating a layer of PVK solution on the surface of the annealed quantum dot light emitting layer 500, controlling the rotation speed to 4000r/min and the spin-coating time to 60s, and after the spin-coating is completed, performing annealing treatment at 120 ℃ for 10min to obtain a PVK thin film with a preset thickness (for example, 40nm) as a hole transport layer 600, so as to obtain the device shown in fig. 8.
Step S700: a hole injection layer 700 is prepared on the hole transport layer 600. In detail, the hole injection layer 700 is continuously prepared on the hole transport layer 600 after the annealing process is completed in step S600 by the solution spin coating method, and the annealing process is performed to avoid stress concentration inside the hole injection layer 700. PMAH was used as a solute and n-propanol was used as a solvent to prepare a solution with a concentration of 5 mg/mL. And spin-coating a layer of PVK solution on the surface of the annealed quantum dot light emitting layer 500, controlling the rotation speed to be 2000r/min, and the spin-coating time to be 30s, and after the spin-coating is completed, performing annealing treatment at 100 ℃ for 10min to obtain a PMAH thin film with a preset thickness (for example, 8nm) as a hole injection layer 700, so as to obtain the device shown in fig. 9.
Step S800: source and drain electrodes 800 are fabricated on the hole injection layer 700 to obtain the quantum dot light-emitting field effect transistor 10. In detail, the source/drain electrodes 800 are deposited on the surface of the annealed hole injection layer 700 by a vacuum evaporation method, so that the quantum dot light-emitting field effect transistor 10 without heavy metals is obtained. The annealed device in step S700 is transferred to a vacuum evaporation chamber, and an Au electrode is evaporated on the surface of the hole injection layer 700 by a vacuum evaporation method, wherein the thickness of the Au electrode can be 100nm, and the source 810 and the drain 820 are prepared, so as to obtain the quantum dot light-field effect transistor 10 (as shown in fig. 1) provided in the first embodiment.
The third embodiment:
an embodiment of the present invention provides a display panel, which includes the quantum dot light-emitting field effect transistor 10 provided in the first embodiment or the quantum dot light-emitting field effect transistor 10 prepared by the preparation method of the quantum dot light-emitting field effect transistor 10 provided in the second embodiment, and has the characteristics of environmental protection, high brightness, high efficiency, long service life, stable operation, simple process, high integration level, and low preparation cost.
The above description is only for the specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.

Claims (10)

1. A quantum dot light-field effect transistor is characterized by comprising a quantum dot light-emitting layer, wherein the material of the quantum dot light-emitting layer comprises CuInS2And ZnS coating the CuInS2To form a core-shell structure.
2. The qd-fet of claim 1, further comprising a substrate, a gate, an insulating layer, an electron transport layer, a hole injection layer, and source and drain electrodes, wherein the substrate, the gate, the insulating layer, the electron transport layer, the qd light emitting layer, the hole transport layer, the hole injection layer, and the source and drain electrodes are sequentially disposed from bottom to top.
3. The qd-fet of claim 2, wherein the gate material comprises Al or Al: and Nd.
4. The qd-fet of claim 2, wherein the material of the insulating layer comprises Al2O3Or Al2O3：Nd。
5. The qd-fet of claim 2, wherein the material of the electron transport layer comprises IGZO.
6. The qd-fet of claim 2, wherein the material of the hole transport layer comprises at least one of PVK, Poly-TPD and TFB.
7. The qd-fet of claim 2, wherein the material of the hole injection layer comprises at least one of PMAH, TPD and NPB.
8. The qd-fet of claim 2, wherein the source and drain electrodes comprise at least one of Au, Au alloy, Pt and Pt alloy.
9. A method for preparing a quantum dot light-emitting field effect transistor is characterized by comprising the following steps:
using CuInS2And ZnS is used for preparing a quantum dot light emitting layer of the quantum dot light field effect transistor, wherein the ZnS coats the CuInS2To form a core-shell structure.
10. A display panel comprising the quantum dot light-emitting field effect transistor of any one of claims 1 to 8 or the quantum dot light-emitting field effect transistor produced by the method of claim 9.
CN202011483712.5A 2020-12-15 2020-12-15 Quantum dot light-emitting field effect transistor, preparation method thereof and display panel Pending CN112608741A (en)

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Publication number Priority date Publication date Assignee Title
CN114242921A (en) * 2021-12-09 2022-03-25 广东省科学院半导体研究所 Luminous field effect transistor and preparation method thereof
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