CN113964277A - Quantum dot light-emitting device and display device - Google Patents
Quantum dot light-emitting device and display device Download PDFInfo
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
Abstract
The invention discloses a quantum dot light-emitting device and a display device, aiming at solving the problems of low device efficiency and short service life caused by carrier imbalance of the quantum dot light-emitting device in the prior art. The quantum dot light emitting device includes: the light-emitting device comprises a substrate, an electrode pair and at least one light-emitting functional layer, wherein the electrode pair is oppositely arranged on one side of the substrate; at least one of the light emitting functional layers includes: the quantum dot light-emitting device comprises a body and a conductive DNA segment connected with the body, wherein the carrier transmission performance of the DNA segment is the same as that of the electron or hole with a small number in the quantum dot light-emitting device, so that the balance of the electron and the hole in the quantum dot light-emitting device can be regulated and controlled through the DNA segment.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a quantum dot light-emitting device and a display device.
Background
The quantum dot is an important inorganic semiconductor nano material, has excellent physicochemical and optical properties, such as good fluorescence property, high quantum efficiency, narrow emission spectrum, unique size-dependent emission spectrum, long fluorescence life and the like, and has great application potential in solar cells, light-emitting diodes, cell imaging, fluorescent probes and other aspects.
The preparation of quantum dot nano-materials is usually realized by a layer-by-layer coating method, and anions and cations are alternately arranged on the surface layer of the quantum dots. Inorganic quantum dot nanoparticles are difficult to dissolve, and have good dissolving performance only by connecting organic ligand materials on the surfaces of the inorganic quantum dot nanoparticles, so that a core-shell ligand-added nano material structure is formed. The ligand material on the surface is usually long-chain alkane, such as oleic acid, oleylamine, octanethiol, and the like, and although the ligand can increase the dispersibility of the quantum dot in the solvent, the ligand hinders the transmission of carriers to a certain extent due to the self insulating property of the ligand material. The imbalance of the current carriers in the device not only affects the efficiency of the device, but also enables the quantum dots to be charged by redundant charges, thereby reducing the service life of the device.
Disclosure of Invention
The invention provides a quantum dot light-emitting device and a display device, aiming at solving the problems of low device efficiency and short service life caused by carrier imbalance of the quantum dot light-emitting device in the prior art.
The embodiment of the invention provides a quantum dot light-emitting device, which comprises: the light-emitting device comprises a substrate, an electrode pair and at least one light-emitting functional layer, wherein the electrode pair is oppositely arranged on one side of the substrate;
at least one of the light emitting functional layers includes: the quantum dot light-emitting device comprises a body and a conductive DNA segment connected with the body, wherein the carrier transmission performance of the DNA segment is the same as that of the electron or hole with a small number in the quantum dot light-emitting device, so that the balance of the electron and the hole in the quantum dot light-emitting device can be regulated and controlled through the DNA segment.
In one possible embodiment, the light emitting function layer includes: an electron transport layer, a quantum dot light emitting layer, and a hole transport layer;
the electron transport layer comprises the DNA fragments, the quantum dot light-emitting layer comprises the DNA fragments, and the DNA fragments in the electron transport layer and the quantum dot light-emitting layer are both N-type conductive fragments.
In one possible embodiment, the bases in the DNA fragment include adenine and thymine.
In one possible embodiment, the DNA fragment comprises the bases of the following sequence:
TAATA。
in one possible embodiment, the light emitting function layer includes: an electron transport layer, a quantum dot light emitting layer, and a hole transport layer;
the hole transport layer comprises the DNA fragments, the quantum dot light-emitting layer comprises the DNA fragments, and the DNA fragments in the hole transport layer and the DNA fragments in the quantum dot light-emitting layer are both P-type conductive fragments.
In one possible embodiment, the bases in the DNA fragment include only guanine and cytosine; or the base in the DNA fragment comprises guanine and cytosine, and the sum of the number of the guanine and the cytosine accounts for more than 50% of the total number of the base in the DNA fragment.
In one possible embodiment, the DNA fragment comprises one of the bases of the following sequence:
GGGCCATC；
GGGCCC。
in one possible embodiment, the host in the quantum dot light emitting layer is a quantum dot; the DNA fragments are connected with the quantum dots through connecting groups, and the connecting groups are groups except the DNA fragments;
the main body in the electron transport layer is inorganic nanoparticles, and the main body in the hole transport layer is inorganic nanoparticles; the DNA fragment is connected with the inorganic nano-particle through an amine group in an internal base.
In one possible embodiment, the number of bases on each strand of the DNA fragment ranges from 4 to 25.
The embodiment of the invention also provides a display device which comprises the quantum dot light-emitting device provided by the embodiment of the invention.
The embodiment of the invention has the following beneficial effects: the at least one light-emitting functional layer includes: the electron-transporting quantum dot light-emitting device comprises a body and a conductive DNA segment connected with the body, wherein the carrier transport performance of the DNA segment is the same as the carrier transport performance of one of electrons and holes in the quantum dot light-emitting device, so that the injection and the transport of the carriers with less quantity in the quantum dot light-emitting device to a quantum dot light-emitting layer can be enhanced, the balance of the carriers in the whole quantum dot device is improved, the efficiency and the service life of the device are improved, and compared with the simple mixing of the DNA segment and the material of a light-emitting functional layer, namely, the DNA segment and the quantum dot are still mutually independent, the essence is that the quantum dot and the holes or the electron transport material are mixed, the charge transport is still limited by a quantum dot surface ligand, in the embodiment of the invention, the DNA segment with the transport performance is directly used as the surface ligand, so that the surface ligand is not blocked by the charge transport any more, the charge transfer capacity can be more directly regulated.
Drawings
Fig. 1 is one of schematic structural diagrams of a quantum dot light-emitting device according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a quantum dot containing a DNA ligand according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of an inorganic nanoparticle containing DNA ligands according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of the substitution of a DNA fragment according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of the exchange of protoligands on the surface of quantum dots into DNA fragments according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of the exchange of the original ligand on the surface of the inorganic nanoparticle with a DNA fragment according to the embodiment of the present invention;
FIG. 7 is a schematic diagram of the structural formulas of guanine, adenine, cytosine and thymine provided by an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present disclosure more clear, the technical solutions of the embodiments of the present disclosure will be described below clearly and completely with reference to the accompanying drawings of the embodiments of the present disclosure. It is to be understood that the described embodiments are only a few embodiments of the present disclosure, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the described embodiments of the disclosure without any inventive step, are within the scope of protection of the disclosure.
Unless otherwise defined, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this disclosure belongs. The use of "first," "second," and similar terms in this disclosure is not intended to indicate any order, quantity, or importance, but rather is used to distinguish one element from another. The word "comprising" or "comprises", and the like, means that the element or item listed before the word covers the element or item listed after the word and its equivalents, but does not exclude other elements or items. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", and the like are used merely to indicate relative positional relationships, and when the absolute position of the object being described is changed, the relative positional relationships may also be changed accordingly.
To maintain the following description of the embodiments of the present disclosure clear and concise, a detailed description of known functions and known components have been omitted from the present disclosure.
As the electron transport material in the quantum dot device mostly adopts metal oxides such as ZnO, ZnMgO and the like, the electron mobility is high, the matching degree of the energy level and the LUMO energy level of the quantum dot is high, most of the hole side is organic hole injection and transport materials such as PEDOT, PSS, TFB, PVK, TCTA and the like, the lower mobility of the organic materials and the larger HOMO energy level difference between the organic materials and the quantum dot cause that the hole injection in the device is relatively poor, and the device always has redundant electrons. Most quantum dots adopt long-chain organic ligands as surface passivation materials in order to reduce surface defects and increase solubility, but the organic materials are insulating and have certain inhibiting effect on the migration of carriers. The insulating ligand on the surface of the quantum dot or the hole/electron transport material is replaced by the ligand with the conductivity, so that the transport rate of carriers can be improved.
Referring to fig. 1, 2 and 3, an embodiment of the present invention provides a quantum dot light emitting device, including: the light-emitting device comprises a substrate base plate 1, an electrode pair 2 and at least one light-emitting functional layer 3, wherein the electrode pair 2 is oppositely arranged on one side of the substrate base plate 1; specifically, the electrode pair 2 may include a first electrode 21, and a second electrode 22 located on a side of the first electrode 21 facing away from the substrate base plate 1; specifically, the light-emitting functional layer 3 may include: one or more of a hole injection layer 31, a hole transport layer 32, a quantum dot light emitting layer 33, an electron transport layer 34, and an electron injection layer 35;
the at least one light-emitting functional layer 3 includes: the quantum dot light-emitting device comprises a body 30 and a conductive DNA segment 303 connected with the body 30, wherein the carrier transmission performance of the DNA segment 303 is the same as that of the electron or hole with a small number in the quantum dot light-emitting device, so that the balance between the electron and the hole in the quantum dot light-emitting device is regulated and controlled through the DNA segment 303. Specifically, for example, before the DNA fragments are not added, the quantum dot light emitting device has one of a larger number of electrons and one of a smaller number of holes, i.e., the electrons are majority and the holes are minority, in the device, a P-type conductive DNA fragment having the same hole transport performance can be provided to enhance the injection and transport of holes in the quantum dot light emitting device, thereby improving the problem of the imbalance between electrons and holes in the original quantum dot light emitting device; for another example, before the DNA fragments are not added, the quantum dot light emitting device has a larger number of holes and a smaller number of electrons, i.e., the number of holes is larger and the number of electrons is smaller, and in this device, the DNA fragments with N-type conductivity, which have the same electron transport performance, can be provided to enhance the injection and transport of electrons in the quantum dot light emitting device, thereby improving the problem of the imbalance between electrons and holes in the original quantum dot light emitting device.
In an embodiment of the present invention, the at least one light-emitting functional layer 3 includes: the body 30 and the conductive DNA segment 303 connected with the body 30, the carrier transport performance of the DNA segment 303 is the same as the carrier transport performance of one of the quantum dot light emitting device with less quantity of electrons and holes, and further the injection and transport of the carrier with less quantity in the quantum dot light emitting device to the quantum dot light emitting layer can be enhanced, thereby improving the balance of the carrier in the whole quantum dot device, improving the efficiency and the service life of the device, and compared with the simple mixing of the DNA segment and the material of the light emitting function layer, namely, the DNA segment and the quantum dot are still mutually independent, the essence is still the mixing of the quantum dot and the hole or the electron transport material, the charge transport is still limited by the quantum dot surface ligand, in the embodiment of the invention, the DNA segment with transport performance is directly used as the surface ligand, so that the surface ligand is not a barrier to the charge transport any more, the charge transfer capacity can be more directly regulated.
Specifically, the DNA fragment has a special double-helix structure, so that charge distribution among bases has the characteristic of pi-pi coupling, electrons can be transmitted along a pi-pi double-helix framework of DNA by the structure, and researches show that the transmission of the electrons and holes in the DNA mainly accords with a charge hopping mechanism and a tunneling mechanism, which are similar to the transmission mechanism of charges in a quantum dot material. In addition, the charge transfer in the DNA strongly depends on the arrangement mode of bases and the number of base pairs, so that the injection and the transmission of hole carriers to a light-emitting layer can be improved by using a DNA fragment with conductive capacity as a ligand to replace an insulating ligand on the surface of a quantum dot or a hole/electron transport material, for example, in a device with electron being multi-photon, a conductive DNA fragment with P-type semiconductor property with a specific base composition structure is used as a ligand of a hole transport material and a quantum dot light-emitting material; in the device with holes as multiple photons, the conductive DNA segment with N-type semiconductor property and a specific base composition structure is adopted as a ligand of an electron transport material and a quantum dot luminescent material, so that the injection and the transmission of electron carriers to a luminescent layer can be improved, the balance of the carriers in the whole device is improved, and the efficiency and the service life of the device are improved.
In fig. 1, the quantum dot light-emitting device is merely configured to be placed in a face-up state, the first electrode 21 is an anode, the second electrode 22 is a cathode, and the light-emitting functional layer 3 includes: the hole injection layer 31, the hole transport layer 32, the quantum dot light emitting layer 33, the electron transport layer 34, and the electron injection layer 35 are arranged in sequence on the side of the first electrode 21 away from the substrate 1 for illustrative purposes, and the present invention is not limited thereto. Specifically, the quantum dot light emitting device may also be an inverted structure, the first electrode 21 may also be a cathode, the second electrode may also be an anode, and the light emitting functional layer 3 may include one or more of a hole injection layer 31, a hole transport layer 32, a quantum dot light emitting layer 33, an electron transport layer 34, and an electron injection layer 35.
In one possible embodiment, before adding no DNA fragments, the number of holes is one of a larger number, the number of electrons is one of a smaller number, that is, the number of holes is a majority and the number of electrons is a minority, and as shown in fig. 1, the light-emitting function layer 3 includes: an electron transport layer 34, a quantum dot light emitting layer 33, and a hole transport layer 32; the electron transport layer 34 comprises a DNA fragment, the quantum dot light emitting layer comprises a DNA fragment, and the DNA fragment in the electron transport layer and the DNA fragment in the quantum dot light emitting layer are both N-type conductive fragments. Specifically, as shown in fig. 2, the body 30 in the quantum dot light emitting layer may be a quantum dot, and the quantum dot may specifically include a core 301 and a shell 302 wrapping the core 301. In the embodiment of the invention, for the quantum dot light emitting device with few electrons, the electron transmission layer 34 in the quantum dot light emitting device and the quantum dot light emitting layer 22 can be provided with the N-type conductive DNA fragments, so that the injection and transmission of the electron to the quantum dot light emitting layer can be enhanced, the balance of current carriers in the whole quantum dot device can be improved, the efficiency and the service life of the device can be improved, and for the quantum dot light emitting device with few electrons, compared with the quantum dot light emitting device with only one of the electron transmission layer and the quantum dot light emitting layer, the electron transmission layer 34 and the quantum dot light emitting layer 22 are simultaneously provided with the N-type conductive DNA fragments, the injection and transmission of the electron to the quantum dot light emitting layer can be more effectively enhanced. Specifically, the quantum dot light-emitting device with minority electrons may also be provided with an N-type conductive DNA segment only in the electron transport layer 34 or only in the quantum dot light-emitting layer 33, so as to enhance the injection and transport of electrons into the quantum dot light-emitting layer.
In one possible embodiment, for the N-type conductive DNA fragment, the bases in the DNA fragment include adenine and thymine, and specifically, may include only adenine and thymine. Specifically, adenine and thymine can be combined as shown in FIG. 7. In the embodiment of the invention, the N-type semiconductor DNA fragment is preferably a copolymerization fragment Poly (dA) -Poly (dT) with periodically arranged adenine (A, electron recombination energy is about 0.81eV) and thymine (T, electron recombination energy is about 1.04eV) with relatively small electron recombination energy, so that the DNA fragment has better N-type carrier transport performance.
In one possible embodiment, for an N-type conducting DNA fragment, the DNA fragment comprises the bases of the following sequence:
TAATA。
in one possible embodiment, the light emitting functional layer includes: an electron transport layer 34, a quantum dot light emitting layer 33, and a hole transport layer 32; the hole transport layer 32 comprises a DNA fragment, the quantum dot light-emitting layer 33 comprises a DNA fragment, and the DNA fragment in the hole transport layer 32 and the DNA fragment in the quantum dot light-emitting layer are both P-type conductive fragments. In the embodiment of the invention, for the quantum dot light emitting device with few holes, the hole transport layer 32 in the quantum dot light emitting device and the quantum dot light emitting layer 22 can be provided with the P-type conductive DNA fragments, so that the injection and transmission of the hole to the quantum dot light emitting layer can be enhanced, the balance of current carriers in the whole quantum dot device can be improved, the efficiency and the service life of the device can be improved, and for the quantum dot light emitting device with few holes, compared with the quantum dot light emitting device with only one of the hole transport layer 32 and the quantum dot light emitting layer 22 which is provided with the P-type conductive DNA fragments, the injection and transmission of the hole to the quantum dot light emitting layer can be enhanced more effectively. Specifically, the quantum dot light emitting device with holes as minority carriers may also be provided with P-type conductive DNA segments only in the hole transport layer 32 or only in the quantum dot light emitting layer 33 to enhance the injection and transport of electrons to the quantum dot light emitting layer.
In one possible embodiment, for a P-type conducting DNA fragment, the bases in the DNA fragment include only guanine and cytosine; alternatively, the bases in the DNA fragment include guanine and cytosine, and the sum of the number of guanine and cytosine accounts for more than 50% of the total number of bases in the DNA fragment. Specifically, the structural formulae of guanine and cytosine are shown in FIG. 7. In the embodiment of the invention, the preferred P-type semiconductor DNA fragment is a copolymer fragment Poly (dG) -Poly (dC) with periodic arrangement of guanine (G, hole recombination energy is about 0.61eV) and cytosine (C, hole recombination energy is about 0.24eV) with smaller hole recombination energy, or the sum of the numbers of guanine and cytosine in the fragment accounts for more than 50% of the total number of bases in the DNA fragment, so that the DNA fragment has better P-type carrier transport performance.
In one possible embodiment, the DNA fragment comprises one of the bases of the following sequence:
GGGCCATC；
GGGCCC。
in one possible embodiment, shown in connection with fig. 2, the host 30 in the quantum dot light emitting layer is a quantum dot; the DNA fragment 303 is connected to the quantum dot through the connecting group 304, and the connecting group 304 is a group other than the DNA fragment, that is, the connecting group 304 may be a group that does not belong to the DNA fragment, specifically, the connecting group 304 may be a group that is more strongly bonded to the quantum dot, for example, the connecting group may be a thiol group. Specifically, the DNA fragment may be a double-helix structure composed of two opposite and parallel deoxyribonucleotide chains, wherein the deoxyribose exists in the form of furanose, and the ring contains hydroxyl group, and the side chain also contains hydroxyl group, the two hydroxyl groups can form phosphodiester bond with phosphate through chemical reaction, and at the end of the finally formed DNA chain, one end contains free phosphate group (called 5 'end), and the other end contains free hydroxyl group (called 3' end), and the hydroxyl group is converted into sulfhydryl group which is stronger with quantum dot through substitution reaction: specifically, for example, as shown in fig. 4 and 5, a DNA fragment containing a hydroxyl group is reacted with TsCl to obtain DNA-OTs, and then reacted with potassium thioacetate to obtain a thiol-substituted DNA fragment, and then a ligand exchange reaction is performed between the thiol-substituted DNA fragment and a quantum dot containing a primary ligand (e.g., oleylamine) to obtain a thiol-DNA-coordinated quantum dot.
In one possible embodiment, and as shown in connection with fig. 3, the host 30 in the electron transport layer 34 is an inorganic nanoparticle, and the host 30 in the hole transport layer 32 is an inorganic nanoparticle; the DNA segment 303 is linked to the inorganic nanoparticle 30 through amine groups 305 in the internal bases. Specifically, as the molecular structure of the basic group in the DNA fragment contains more amine functional groups, the amine group can coordinate with the surface of the inorganic nanoparticle (e.g., NiO), and as shown in fig. 6, in the process of synthesizing the inorganic nanoparticle, the conductive DNA fragment is added as a ligand, so that the surface defects of the inorganic nanoparticle can be effectively passivated, and the carrier transport performance of the inorganic nanoparticle can be improved.
In one possible embodiment, the number of bases on each strand of the DNA segment 303 is in the range of 4 to 25. Specifically, since the distance between adjacent bases on the same strand is about 0.34nm, the total base length is between 1nm and 8 nm. In the embodiment of the invention, the number of the base groups on each chain of the DNA fragment 303 is 4-25, the length of the base groups can be controlled to ensure better transmission performance on one hand, and the length of the surface ligand of the quantum dot can be controlled on the other hand, the size of the quantum dot is usually about 10nm, the length of the commonly used surface ligand is usually 1nm-3nm, the corresponding length of the base groups is set to be 4-25 to 1-8nm, and good carrier transmission performance can be ensured.
Specifically, in one possible embodiment, the DNA fragment 303 has a conductivity of at least 10-6And S/m is more than or equal to.
In one possible embodiment, the DNA fragment may be a single-stranded fragment or a double-stranded fragment.
Based on the same inventive concept, the embodiment of the invention also provides a display device, which comprises the quantum dot light-emitting device provided by the embodiment of the invention.
Specifically, in order to more clearly understand the quantum dot light emitting device provided by the embodiment of the present invention, the following further detailed description is made:
example one
In the embodiment, the oleylamine coordinated red light CdSe/ZnS nano particle is selected as a main body in a quantum dot light emitting layer, and 8 pairs of conductive DNA GGGCCATC of guanine, adenine, cytosine and thymine segments are selected for ligand exchange;
first, the conducting DNA fragment GGGCCATC was thiolated: DNA is a double helix structure composed of two inverted, parallel chains of deoxyribonucleotides, which are in the form of furanose, containing hydroxyl groups on the ring and hydroxyl groups on the side chains, which can form phosphodiester bonds with phosphates by chemical reaction, while at the end of the finally formed DNA chain, one end contains a free phosphate group (called 5 'end) and the other end contains a free hydroxyl group (called 3' end), which is converted into a thiol group with stronger binding to quantum dots by substitution reaction: one of the methods is shown in FIG. 4 and FIG. 5, in which hydroxyl DNA is reacted with TsCl to obtain DNA-OTs, which is then reacted with potassium thioacetate, and finally reacted with alkali to obtain mercapto-substituted DNA;
secondly, synthesizing oleylamine coordinated red light CdSe/ZnS quantum dots according to a conventional hot injection method, and then carrying out ligand exchange reaction by using the sulfhydrylated conductive DNA fragments to obtain sulfhydrylated DNA coordinated quantum dots, as shown in FIG. 2. Hole carriers can be directly injected into the quantum dots through the core-shell structure, and can also be transmitted and injected through a conductive ligand;
preparing a device: the ITO conductive substrate is sequentially washed by water, ethanol and acetone for 15 minutes respectively and then is dried for standby; and sequentially depositing PEDOT, PSS and 8mg/ml TFB solution on an ITO substrate to be used as hole injection and transmission materials respectively, then depositing 10mg/ml sulfydryl DNA coordinated red light quantum dots and 30mg/ml ZnO to be used as light-emitting materials and electron transmission materials respectively, and finally depositing Ag with the thickness of 100nm to be used as a cathode electrode and packaging the device.
Example two
In the embodiment, NiO nanoparticles are selected as a hole injection material, green light CdSe/ZnS coordinated by oleic acid is selected as a luminescent material, and conductive DNAGGGCCC of 6 pairs of guanine and cytosine copolymerization segments is selected as a NiO surface ligand;
because the molecular structure of the basic group contains more amino functional groups, the amino groups can be coordinated with the NiO surface, and in the process of synthesizing the NiO nano particles, the conductive DNA fragments are added as ligands, so that the surface defects of the NiO nano particles can be effectively passivated, and the conductivity of the NiO nano particles is improved;
preparing a device: the ITO conductive substrate is sequentially washed by water, ethanol and acetone for 15 minutes respectively and then is dried for standby; NiO nano particles coordinated by conductive DNA and PVK solution of 8mg/ml are sequentially deposited on an ITO substrate to be respectively used as injection and transmission materials, then green light quantum dots of 15mg/ml and ZnO of 30mg/ml are deposited to be respectively used as luminescent materials and electron transmission materials, finally Ag with the thickness of 100nm is deposited to be used as a cathode electrode, and the device is packaged.
EXAMPLE III
In the embodiment, dodecanethiol coordinated blue light CdSe/ZnSe is selected as a main body in a quantum dot light emitting layer, and 5 pairs of conductive DNATAATA of adenine and thymine copolymerization segments are selected as ZnO surface ligands;
similar to the two embodiments, because the molecular structures of adenine and thymine contain amino functional groups, the amino groups can be coordinated with the surface of ZnO, and in the synthesis process of ZnO nanoparticles, the conductive DNA fragments are added as ligands, so that the surface defects of the ZnO nanoparticles can be effectively passivated, and the conductivity of the ZnO nanoparticles can be improved;
preparing a device: the ITO conductive substrate is sequentially washed by water, ethanol and acetone for 15 minutes respectively and then is dried for standby; ZnO coordinated with conductive DNA fragment TAATA and blue light quantum dots are sequentially deposited on an ITO substrate to serve as an electron transport layer and a light emitting layer, then NPB and TCTA are deposited in a vacuum evaporation mode to serve as hole transport and injection materials, preferably Ag with the thickness of 100nm is deposited to serve as a cathode electrode, and the device is packaged.
The embodiment of the invention has the following beneficial effects: the at least one light-emitting functional layer includes: the electron-transporting quantum dot light-emitting device comprises a body and a conductive DNA segment connected with the body, wherein the carrier transport performance of the DNA segment is the same as the carrier transport performance of one of electrons and holes in the quantum dot light-emitting device, so that the injection and the transport of the carriers with less quantity in the quantum dot light-emitting device to a quantum dot light-emitting layer can be enhanced, the balance of the carriers in the whole quantum dot device is improved, the efficiency and the service life of the device are improved, and compared with the simple mixing of the DNA segment and the material of a light-emitting functional layer, namely, the DNA segment and the quantum dot are still mutually independent, the essence is that the quantum dot and the holes or the electron transport material are mixed, the charge transport is still limited by a quantum dot surface ligand, in the embodiment of the invention, the DNA segment with the transport performance is directly used as the surface ligand, so that the surface ligand is not blocked by the charge transport any more, the charge transfer capacity can be more directly regulated.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (10)
1. A quantum dot light emitting device, comprising: the light-emitting device comprises a substrate, an electrode pair and at least one light-emitting functional layer, wherein the electrode pair is oppositely arranged on one side of the substrate;
at least one of the light emitting functional layers includes: the quantum dot light-emitting device comprises a body and a conductive DNA segment connected with the body, wherein the carrier transmission performance of the DNA segment is the same as that of the electron or hole with a small number in the quantum dot light-emitting device, so that the balance of the electron and the hole in the quantum dot light-emitting device can be regulated and controlled through the DNA segment.
2. The quantum dot light-emitting device according to claim 1, wherein the light-emitting functional layer comprises: an electron transport layer, a quantum dot light emitting layer, and a hole transport layer;
the electron transport layer comprises the DNA fragments, the quantum dot light-emitting layer comprises the DNA fragments, and the DNA fragments in the electron transport layer and the quantum dot light-emitting layer are both N-type conductive fragments.
3. The qd-led device of claim 2, wherein the bases in the DNA segment include adenine and thymine.
4. The qd-led device of claim 3, wherein the DNA segment comprises the bases of the following sequence:
TAATA。
5. the quantum dot light-emitting device according to claim 1, wherein the light-emitting functional layer comprises: an electron transport layer, a quantum dot light emitting layer, and a hole transport layer;
the hole transport layer comprises the DNA fragments, the quantum dot light-emitting layer comprises the DNA fragments, and the DNA fragments in the hole transport layer and the DNA fragments in the quantum dot light-emitting layer are both P-type conductive fragments.
6. The quantum dot light-emitting device according to claim 5, wherein the bases in the DNA fragment include only guanine and cytosine; or the base in the DNA fragment comprises guanine and cytosine, and the sum of the number of the guanine and the cytosine accounts for more than 50% of the total number of the base in the DNA fragment.
7. A quantum dot light emitting device according to claim 6, wherein the DNA fragment comprises one of the bases of the following sequences:
GGGCCATC；
GGGCCC。
8. the quantum dot light emitting device of any one of claims 2-7, wherein the host in the quantum dot light emitting layer is a quantum dot; the DNA fragments are connected with the quantum dots through connecting groups, and the connecting groups are groups except the DNA fragments;
the main body in the electron transport layer is inorganic nanoparticles, and the main body in the hole transport layer is inorganic nanoparticles; the DNA fragment is connected with the inorganic nano-particle through an amine group in an internal base.
9. The quantum dot light-emitting device according to claim 1, wherein the number of bases on each strand of the DNA fragment is in the range of 4 to 25.
10. A display device comprising a qd-led device as claimed in any one of claims 1 to 9.
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Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102903855A (en) * | 2012-10-22 | 2013-01-30 | 东南大学 | Quantum dot electroluminescent device and preparation method thereof |
| KR20130122321A (en) * | 2012-04-30 | 2013-11-07 | 순천향대학교 산학협력단 | Organic light emitting diodes using compound |
| KR20160113944A (en) * | 2015-03-23 | 2016-10-04 | 연세대학교 산학협력단 | High efficiency and eco-friendly bio-oled with dna based materials |
| CN106848079A (en) * | 2017-02-20 | 2017-06-13 | 纳晶科技股份有限公司 | Luminous electric charge transmission compound, the ink containing it, its preparation method and QLED devices |
| CN110311049A (en) * | 2019-07-03 | 2019-10-08 | 京东方科技集团股份有限公司 | Quantum dot display base plate and preparation method thereof, display device |
| CN110492012A (en) * | 2019-08-26 | 2019-11-22 | 京东方科技集团股份有限公司 | A kind of quantum dot light emitting device and preparation method thereof, display panel, display device |
| WO2020134161A1 (en) * | 2018-12-29 | 2020-07-02 | Tcl科技集团股份有限公司 | Quantum dot light emitting diode and preparation method thereof |
| CN111384279A (en) * | 2018-12-29 | 2020-07-07 | Tcl集团股份有限公司 | Quantum dot light-emitting diode |
| US20210273189A1 (en) * | 2018-07-24 | 2021-09-02 | Sharp Kabushiki Kaisha | Light-emitting device, method for manufacturing light-emitting device, and apparatus for manufacturing light-emitting device |
-
2021
- 2021-10-19 CN CN202111215147.9A patent/CN113964277A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20130122321A (en) * | 2012-04-30 | 2013-11-07 | 순천향대학교 산학협력단 | Organic light emitting diodes using compound |
| CN102903855A (en) * | 2012-10-22 | 2013-01-30 | 东南大学 | Quantum dot electroluminescent device and preparation method thereof |
| KR20160113944A (en) * | 2015-03-23 | 2016-10-04 | 연세대학교 산학협력단 | High efficiency and eco-friendly bio-oled with dna based materials |
| CN106848079A (en) * | 2017-02-20 | 2017-06-13 | 纳晶科技股份有限公司 | Luminous electric charge transmission compound, the ink containing it, its preparation method and QLED devices |
| US20210273189A1 (en) * | 2018-07-24 | 2021-09-02 | Sharp Kabushiki Kaisha | Light-emitting device, method for manufacturing light-emitting device, and apparatus for manufacturing light-emitting device |
| WO2020134161A1 (en) * | 2018-12-29 | 2020-07-02 | Tcl科技集团股份有限公司 | Quantum dot light emitting diode and preparation method thereof |
| CN111384279A (en) * | 2018-12-29 | 2020-07-07 | Tcl集团股份有限公司 | Quantum dot light-emitting diode |
| CN110311049A (en) * | 2019-07-03 | 2019-10-08 | 京东方科技集团股份有限公司 | Quantum dot display base plate and preparation method thereof, display device |
| CN110492012A (en) * | 2019-08-26 | 2019-11-22 | 京东方科技集团股份有限公司 | A kind of quantum dot light emitting device and preparation method thereof, display panel, display device |
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