CN113961404A - RDT method and device of memory, terminal equipment and storage medium - Google Patents
RDT method and device of memory, terminal equipment and storage medium Download PDFInfo
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Abstract
The invention discloses an RDT method, a device, terminal equipment and a computer storage medium of a memory, wherein the RDT method of the memory is applied to the terminal equipment, and the method comprises the following steps: detecting whether an RDT record exists in a memory configured by current terminal equipment, wherein the RDT record is a record for performing RDT operation for the memory for the first time; if the RDT record does not exist in the memory, performing first RDT operation on the memory based on a background running mode; and pausing the first RDT operation according to a preset operation instruction, and responding to and executing the operation instruction. According to the invention, the memory does not need to be subjected to RDT in the traditional memory mass production process to consume a large amount of time and production cost, and the terminal equipment cannot respond to the front-end operation instruction because the memory does not pass the RDT detection, so that the production quality of the memory is ensured, and the overall mass production efficiency of the memory is improved.
Description
Technical Field
The present invention relates to the field of memory technologies, and in particular, to an RDT method and apparatus for a memory, a terminal device, and a computer storage medium.
Background
Currently, in mass production of any type of memory products, RDT (Reliability development Testing) operation is required to ensure the quality of particles in the solid-state storage medium, and a bad physical block or data page in the memory can be screened out based on the RDT operation. However, as the capacity of the memory product in time is larger and larger, a large amount of time is consumed in the RDT operation process for the memory, and the efficiency of mass production of the memory is seriously reduced.
Based on this, in order to improve the mass production efficiency of the memory, some conventional methods omit the step of performing RDT operation on the memory during mass production, and only use the original factory bad block record table to identify the bad physical blocks in the memory. Thus, the memory with low quality caused by not performing RDT operation is often found to have a bad block and cannot be used in the process of being packaged into a terminal for application, thereby causing the phenomena of product change and even complaint of customers.
In summary, how to improve the mass production efficiency of the memory on the premise of performing an effective RDT operation on the memory to ensure the basic quality of the memory is a technical problem to be solved urgently in the industry.
Disclosure of Invention
The invention mainly aims to provide an RDT method, an RDT device, a terminal device and a computer storage medium of a memory, and aims to solve the technical problem of improving the mass production efficiency of the memory on the premise of ensuring the basic quality of the memory by effectively carrying out RDT operation on the memory.
In order to achieve the above object, the present invention provides an RDT method for a memory, where the RDT method for the memory is applied to a terminal device, and the RDT method for the memory includes:
detecting whether an RDT record exists in a memory configured by current terminal equipment, wherein the RDT record is a record for performing RDT operation for the memory for the first time;
if the RDT record does not exist in the memory, performing first RDT operation on the memory based on a background running mode;
and pausing the first RDT operation according to a preset operation instruction, and responding to and executing the operation instruction.
Further, after the step of suspending the first RDT operation according to a preset execution instruction and responding to the execution of the execution instruction, the method further includes:
detecting whether the execution of the running instruction is finished;
and if so, continuing to restart the first RDT operation based on the background running mode.
Further, the method further comprises:
and synchronously generating the RDT record of the memory when the first RDT operation is carried out on the memory.
Further, the execution instructions include: data storage instructions, said step of executing said operational instructions in response thereto comprising:
when the data storage instruction is acquired, detecting a detected physical block of the memory, wherein the detected physical block is a physical block which is already subjected to the first RDT operation in the memory;
executing the data store instruction based on the detected physical block response.
Further, the step of executing the data store instruction based on the detected physical block response comprises:
detecting data to be stored pointed by the data storage instruction;
and executing the data storage instruction according to the data quantity of the data to be stored and the detected physical block response so as to write the data to be stored into the memory.
Further, the step of executing the data storage instruction according to the data amount of the data to be stored and the detected physical block response to write the data to be stored into the memory includes:
determining whether the detected physical block can store and write the data to be stored according to the data volume;
and if the detected physical block can store and write the data to be stored, controlling the memory to write the data to be stored into the detected physical block for storage.
Further, after the step of determining whether the detected physical block can store and write the data to be stored according to the data amount, the method further includes:
if the detected physical block is determined to be incapable of storing and writing the data to be stored, determining a target physical block to be used from physical blocks of the memory which are not subjected to RDT operation;
after the RDT operation is executed aiming at the target physical block to determine that the RDT is successful, the memory is controlled to write the data to be stored into the detected physical block and/or the target physical block for storage.
In addition, the RDT apparatus of the memory is applied to a terminal device, and includes:
the terminal device comprises a detection module, a storage module and a control module, wherein the detection module is used for detecting whether an RDT record exists in a memory configured by a current terminal device, and the RDT record is a record for executing RDT operation for the memory for the first time;
the background RDT module is used for carrying out primary RDT operation on the memory based on a background running mode if the RDT record does not exist in the memory;
and the instruction response module is used for pausing the first RDT operation according to a preset operation instruction and responding to and executing the operation instruction.
The functional modules of the RDT device of the memory of the present invention implement the steps of the RDT method of the memory as described above when operating.
In addition, to achieve the above object, the present invention also provides a terminal device, including: a memory, a processor, and a memory RDT program stored on and executable on the memory, the memory RDT program when executed by the processor implementing the steps of the memory RDT method as in the above.
Furthermore, to achieve the above object, the present invention also provides a computer storage medium having a computer program stored thereon, wherein the computer program, when executed by a processor, implements the steps of the RDT method of the memory as described above.
The invention provides an RDT method, a device, terminal equipment and a computer storage medium of a memory, wherein the RDT method of the memory is applied to the terminal equipment and comprises the following steps: detecting whether an RDT record exists in a memory configured by current terminal equipment, wherein the RDT record is a record for performing RDT operation for the memory for the first time; if the RDT record does not exist in the memory, performing first RDT operation on the memory based on a background running mode; and pausing the first RDT operation according to a preset operation instruction, and responding to and executing the operation instruction.
According to the invention, after a mass production memory is packaged into the terminal equipment, the terminal equipment detects whether the memory packaged and configured by the current terminal equipment stores the RDT record which is subjected to the RDT operation for the memory for the first time in the process of power-on operation, so that when the memory is detected to have no RDT record (namely the memory is not subjected to the RDT operation in the mass production process), the current terminal equipment executes the first RDT operation for the memory based on a background operation mode, and in addition, if the current terminal equipment acquires a preset operation instruction, the current terminal equipment immediately suspends the first RDT operation which is executed for the memory according to the operation instruction and responds to and executes the operation instruction first.
Compared with the traditional mode that the step of performing RDT operation on the memory is omitted in the mass production process, the memory is directly packaged and configured to the terminal equipment after the bad physical block in the memory is identified by using the original factory bad block record table, the RDT operation aiming at the memory is executed based on the background running mode when the terminal equipment detects that the packaged and configured memory does not execute the RDT operation, and the RDT operation is suspended to respond to the execution instruction before the execution instruction is acquired. Therefore, the terminal device can directly carry out RDT operation based on the background operation mode, a large amount of time and production cost are not consumed for executing RDT on the memory like the traditional memory mass production process, and the terminal device cannot respond to the operation instruction of the front end because the memory does not detect out a bad block through the RDT, namely, the production quality of the memory is ensured and the whole mass production efficiency of the memory is improved.
Drawings
Fig. 1 is a schematic structural diagram of the hardware operation of a terminal device according to an embodiment of the present invention;
FIG. 2 is a flow chart of an embodiment of an RDT method of a memory according to the invention;
FIG. 3 is a schematic diagram of the structure of the RDT system of the memory according to the present invention.
The objects, features and advantages of the present invention will be further explained with reference to the accompanying drawings.
Detailed Description
It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
As shown in fig. 1, fig. 1 is a schematic structural diagram of a hardware operating environment related to a terminal device according to an embodiment of the present invention.
It should be noted that fig. 1 is a schematic structural diagram of a hardware operating environment of the terminal device. The terminal device in the embodiment of the present invention may be a device for executing the RDT method of the memory provided by the present invention for a memory based on nand flash as a storage medium, and the terminal device may specifically be a mobile terminal, a data storage control terminal, a PC, a portable computer, or other terminals.
As shown in fig. 1, the terminal device may include: a processor 1001, such as a CPU, a network interface 1004, a user interface 1003, a memory 1005, a communication bus 1002. Wherein a communication bus 1002 is used to enable connective communication between these components. The user interface 1003 may include a Display screen (Display), an input unit such as a Keyboard (Keyboard), and the optional user interface 1003 may also include a standard wired interface, a wireless interface. The network interface 1004 may optionally include a standard wired interface, a wireless interface (e.g., WI-FI interface). The memory 1005 may be a non-volatile memory (e.g., Flash memory), a high-speed RAM memory, or a non-volatile memory (e.g., a disk memory). The memory 1005 may alternatively be a storage device separate from the processor 1001.
Those skilled in the art will appreciate that the terminal device configuration shown in fig. 1 is not intended to be limiting of the terminal device and may include more or fewer components than those shown, or some components may be combined, or a different arrangement of components.
As shown in fig. 1, a memory 1005, which is a kind of computer storage medium, may include therein an operating system, a network communication module, a user interface module, and an RDT program of the memory. Among these, the operating system is a program that manages and controls the hardware and software resources of the sample terminal device, the RDT program that supports memory, and the execution of other software or programs.
In the terminal apparatus shown in fig. 1, the user interface 1003 is mainly used for data communication with each terminal; the network interface 1004 is mainly used for connecting a background server and performing data communication with the background server; and the processor 1001 may be configured to call the RDT program of the memory stored in the memory 1005 and perform the following operations:
detecting whether an RDT record exists in a memory configured by current terminal equipment, wherein the RDT record is a record for performing RDT operation for the memory for the first time;
if the RDT record does not exist in the memory, performing first RDT operation on the memory based on a background running mode;
and pausing the first RDT operation according to a preset operation instruction, and responding to and executing the operation instruction.
Further, the processor 1001 may call the RDT program of the memory stored in the memory 1005, and after executing the step of suspending the first RDT operation according to a preset execution instruction and responding to the execution of the execution instruction, further execute the following operations:
detecting whether the execution of the running instruction is finished;
and if so, continuing to restart the first RDT operation based on the background running mode.
Further, the processor 1001 may call the RDT program of the memory stored in the memory 1005, and also perform the following operations:
and synchronously generating the RDT record of the memory when the first RDT operation is carried out on the memory.
Further, the execution instructions include: as data store instructions, the processor 1001 may call the RDT program of the memory stored in the memory 1005, and also perform the following operations:
when the data storage instruction is acquired, detecting a detected physical block of the memory, wherein the detected physical block is a physical block which is already subjected to the first RDT operation in the memory;
executing the data store instruction based on the detected physical block response.
Further, the processor 1001 may call the RDT program of the memory stored in the memory 1005, and also perform the following operations:
detecting data to be stored pointed by the data storage instruction;
and executing the data storage instruction according to the data quantity of the data to be stored and the detected physical block response so as to write the data to be stored into the memory.
Further, the processor 1001 may call the RDT program of the memory stored in the memory 1005, and also perform the following operations:
determining whether the detected physical block can store and write the data to be stored according to the data volume;
and if the detected physical block can store and write the data to be stored, controlling the memory to write the data to be stored into the detected physical block for storage.
Further, the processor 1001 may call the RDT program of the memory stored in the memory 1005, and after executing the step of determining whether the detected physical block can store and write the data to be stored according to the data amount, further execute the following operations:
if the detected physical block is determined to be incapable of storing and writing the data to be stored, determining a target physical block to be used from physical blocks of the memory which are not subjected to RDT operation;
after the RDT operation is executed aiming at the target physical block to determine that the RDT is successful, the memory is controlled to write the data to be stored into the detected physical block and/or the target physical block for storage.
Based on the above structure, various embodiments of the RDT method of the memory of the present invention are proposed.
It should be noted that, in this embodiment, since any type of memory product currently needs to perform RDT (Reliability development Testing) operation during mass production to ensure the quality of the particles in the solid-state storage medium, and a bad physical block or data page in the memory can be screened out based on the RDT operation. However, as the capacity of the memory product in time is larger and larger, a large amount of time is consumed in the RDT operation process for the memory, and the efficiency of mass production of the memory is seriously reduced.
Based on this, in order to improve the mass production efficiency of the memory, some conventional methods omit the step of performing RDT operation on the memory during mass production, and only use the original factory bad block record table to identify the bad physical blocks in the memory. Thus, the memory with low quality caused by not performing RDT operation is often found to have a bad block and cannot be used in the process of being packaged into a terminal for application, thereby causing the phenomena of product change and even complaint of customers.
In view of the above phenomenon, the present application provides an RDT method for a memory, where after a mass production memory is packaged into a terminal device, the terminal device detects, in a power-on operation process, whether an RDT record, which is obtained by first performing an RDT operation on the memory, is stored in the memory configured by being packaged in the current terminal device, so that when it is detected that the RDT record does not exist in the memory (that is, the memory does not perform the RDT operation in the mass production process), the current terminal device performs the first RDT operation on the memory based on a background operation mode, and if the current terminal device obtains a preset operation instruction, the current terminal device immediately suspends the first RDT operation being performed on the memory according to the operation instruction and responds to perform the operation instruction first.
Compared with the traditional mode that the step of performing RDT operation on the memory is omitted in the mass production process, the memory is directly packaged and configured to the terminal equipment after the bad physical block in the memory is identified by using the original factory bad block record table, the RDT operation aiming at the memory is executed based on the background running mode when the terminal equipment detects that the packaged and configured memory does not execute the RDT operation, and the RDT operation is suspended to respond to the execution instruction before the execution instruction is acquired. Therefore, the terminal device can directly carry out RDT operation based on the background operation mode, a large amount of time and production cost are not consumed for executing RDT on the memory like the traditional memory mass production process, and the terminal device cannot respond to the operation instruction of the front end because the memory does not detect out a bad block through the RDT, namely, the production quality of the memory is ensured and the whole mass production efficiency of the memory is improved.
Referring to fig. 2, fig. 2 is a flow chart illustrating an RDT method of a memory according to a first embodiment of the invention.
The embodiment of the invention provides an embodiment of an RDT method of a memory, which is applied to the terminal equipment to carry out RDT operation on the memory based on nand flash as a storage medium. It should be noted that, although a logical order is shown in the flow chart, in some cases, the steps shown or described may be performed in an order different than that shown or described herein.
The RDT method of the memory comprises the following steps:
step S100, detecting whether an RDT record exists in a memory configured by the current terminal equipment, wherein the RDT record is a record for executing RDT operation for the memory for the first time;
in this embodiment, the configuration memory in the current terminal device is a memory which is formed in advance during mass production and in which RDT operations are not performed on all physical blocks and in which firmware is written only after necessary algorithm tables and partial spare blocks are scanned by a mass production tool. The necessary algorithm table and the partially spare blocks may be specifically a table containing one or more memory operation algorithms recorded in advance by a design manufacturer of the memory based on the basic operation requirements of the memory itself, and one or more physical blocks that the memory pre-marked by the design manufacturer must guarantee to be normal in order to realize the basic operation.
When the terminal equipment is powered on for the first time, whether the currently configured memory has the RDT record which is subjected to the RDT operation in advance or not is detected, so that whether the memory is subjected to the RDT operation for the first time or not is judged.
It should be noted that, in this embodiment, no matter whether the memory configured by the current terminal device performs the RDT operation on all the physical blocks based on the mass production tool in the mass production process or does not perform the RDT operation in the mass production process, but after being packaged and configured in the terminal device, the terminal device performs the RDT operation on all the physical blocks of the memory, the mass production tool or the terminal device generates an RDT record for identifying that the memory has performed the first RDT operation while starting the RDT operation on all the physical blocks. Therefore, the terminal device can determine whether the memory has performed the first RDT operation by detecting whether the RDT record (which may be specifically directly stored in the memory) exists in the memory when the terminal device is powered on for the first time.
Step S200, if it is detected that the RDT record does not exist in the memory, performing a first RDT operation on the memory based on a background running mode;
if the terminal device is powered on for the first time, it is detected that the configured memory does not have the RDT record, that is, it is determined that the memory has not performed RDT operations on all physical blocks before, so that the terminal device immediately starts an operation process in the background based on a background operation mode to start performing the first RDT operations on all the physical blocks of the memory.
Further, in a possible embodiment, the RDT method of the memory of the present invention further includes:
step S400, synchronously generating RDT records of the memory during the first RDT operation performed on the memory.
When the terminal device starts to perform the first RDT operation on all the physical blocks of the memory, an RDT record used for identifying that the memory has performed the first RDT operation is synchronously generated, and the RDT record is stored on the memory. Therefore, when the terminal equipment is powered on and operated due to operations such as system reset and the like in the subsequent process, the RDT record of the configured memory can be directly detected, so that the RDT operation does not need to be repeated for the memory, and the intelligence of the RDT operation performed by the memory is further improved.
Step S300, according to a preset running instruction, pausing the first RDT operation, and responding to and executing the running instruction.
It should be noted that, in this embodiment, the preset operation instruction is an operation instruction generated based on a front-end operation requirement during the first RDT operation performed on all physical blocks of the memory by the terminal device.
In the process that the terminal device performs RDT operation on all physical blocks of the memory based on a background operation mode, if an operation instruction generated by a front end is obtained, the terminal device suspends the RDT operation on all the physical blocks of the memory in the background when the operation instruction is obtained, so that the operation instruction is responded and executed firstly, and the normal operation of the whole terminal device is ensured.
Further, in a possible embodiment, after the step S300, the RDT method of the memory of the present invention may further include:
step S500, detecting whether the execution of the running instruction is finished;
and S600, if yes, continuously restarting the first RDT operation based on the background running mode.
When the terminal device suspends the RDT operation performed by the background for all the physical blocks of the memory and always responds to and executes the acquired running instruction generated by the front end, the continuous response execution process for the running instruction is detected, that is, whether the running instruction is executed at the current time is detected. Therefore, once the terminal device detects that the running instruction has been executed at present, the terminal device immediately restarts the first RDT operation performed on all the physical blocks of the memory based on the background-initiated running process, and so on until the RDT operation is successfully ended.
In this embodiment, after packaging mass-produced memories into terminal devices, when the terminal devices are powered on for the first time, the RDT method of the memory of the present invention detects whether RDT records that have been executed with RDT operations in advance exist in currently configured memories, so as to determine whether the memory has been subjected to the RDT operations for the first time; if the terminal device is powered on for the first time, it is detected that no RDT record exists in the configured memory, that is, it is determined that the memory has not been subjected to RDT operation for all physical blocks before, so that the terminal device immediately starts an operation process in the background based on a background operation mode to start performing the first RDT operation for all physical blocks of the memory; in the process that the terminal device performs RDT operation on all physical blocks of the memory based on a background operation mode, if an operation instruction generated by a front end is obtained, the terminal device suspends the RDT operation on all the physical blocks of the memory in the background when the operation instruction is obtained, so that the operation instruction is responded and executed firstly, and the normal operation of the whole terminal device is ensured.
In addition, when the terminal device suspends the RDT operation performed by the background on all the physical blocks of the memory and always responds to and executes the acquired running instruction generated by the front end, the continuous response execution process for the running instruction is detected, that is, whether the running instruction is executed at the current time is detected. Therefore, once the terminal device detects that the running instruction has been executed at present, the terminal device immediately restarts the first RDT operation performed on all the physical blocks of the memory based on the background-initiated running process, and so on until the RDT operation is successfully ended.
Compared with the traditional mode that the step of performing RDT operation on the memory is omitted in the mass production process, the memory is directly packaged and configured to the terminal equipment after the bad physical block in the memory is identified by using the original factory bad block record table, the RDT operation aiming at the memory is executed based on the background running mode when the terminal equipment detects that the packaged and configured memory does not execute the RDT operation, and the RDT operation is suspended to respond to the execution instruction before the execution instruction is acquired. Therefore, the terminal device can directly carry out RDT operation based on the background operation mode, a large amount of time and production cost are not consumed for executing RDT on the memory like the traditional memory mass production process, and the terminal device cannot respond to the operation instruction of the front end because the memory does not detect out a bad block through the RDT, namely, the production quality of the memory is ensured and the whole mass production efficiency of the memory is improved.
Further, based on the above first embodiment of the RDT method of the memory of the present invention, a second embodiment of the RDT method of the memory of the present invention is proposed. The main difference between the second embodiment of the RDT method of the memory of the present invention and the first embodiment is that, in this embodiment, the operation instruction in the step S300 includes: the step of "responding to the execution of the execution instruction" in the step S300 may include:
step S301, when the data storage instruction is acquired, detecting a detected physical block of the memory, wherein the detected physical block is a physical block which has undergone the first RDT operation in the memory;
it should be noted that, in this embodiment, the detected physical block is a physical block that has been subjected to the first RDT operation and has been scanned in the memory, and in the process of performing the first RDT operation on all the physical blocks of the memory, each time one physical block is detected by scanning, the physical block is recorded as the detected physical block.
After the terminal device obtains the operation instruction generated by the front end, if the operation instruction is detected to be a data storage instruction indicating that the memory stores data, the terminal device detects the detected physical block which is scanned after the memory is subjected to the first RDT operation at the current moment.
Step S302, executing the data storage instruction based on the detected physical block response.
After detecting and determining the detected physical block which is scanned by the memory after the first RDT operation at the current moment, the terminal equipment immediately controls the memory to use the detected physical block to respond and execute the acquired data storage instruction so as to write and store the data to be stored, which is pointed by the data storage instruction, on the detected physical block.
Further, in a possible embodiment, the step S302 may include:
step S3021, detecting data to be stored to which the data storage instruction points;
step S3022, executing the data storage instruction according to the data amount of the data to be stored and the detected physical block response to write the data to be stored into the memory.
The terminal device further detects data to be stored pointed by the acquired data storage instruction after detecting the detected physical block which is scanned after the memory is determined to have undergone the first RDT operation at the current moment, and then responds to executing the data storage instruction to control the memory to write and store the data to be stored on the detected physical block and/or other physical blocks in the memory based on the detected data volume size of the data to be stored and the detected determined detected physical block.
Further, in a possible embodiment, the step S3022 may further include:
step A, determining whether the detected physical block can store and write the data to be stored according to the data volume;
when the terminal device controls the memory to write and store the data to be stored pointed by the acquired data storage instruction to the detected physical block, whether the detected physical block can store and write the data to be stored is detected and determined based on the data volume of the data to be stored. That is, the terminal device determines all available storage spaces of the detected physical block on the memory first, and then compares whether the size of all available storage spaces is greater than or equal to the data size of the data to be stored, so that when the size of all available storage spaces is greater than or equal to the data size, it is determined that the detected physical block can store and write the data to be stored, otherwise, it is determined that the detected physical block cannot store and write the data to be stored.
And B, if the detected physical block can store and write the data to be stored, controlling the memory to write the data to be stored into the detected physical block for storage.
When the terminal equipment detects and determines that the detected physical block in the memory can store and write the data to be stored based on the data volume of the data to be stored, the terminal equipment immediately controls the memory to store and write the data to be stored on the detected physical block in a programming mode.
It should be noted that, in this embodiment, based on different design requirements of practical applications, in any other feasible implementation, the terminal device may also use other data writing manners besides the method for controlling the memory to write the data to be stored by programming the memory, so as to control the memory to write the data to be stored.
Further, in a possible embodiment, in step a, after determining whether the detected physical block can store and write the data to be stored according to the data amount, the RDT method of the memory of the present invention may further include:
step C, if the detected physical block is determined to be incapable of storing and writing the data to be stored, determining a target physical block to be used from the physical blocks of the memory which are not subjected to RDT operation;
if the terminal device detects and determines the detected physical block in the memory based on the data volume of the data to be stored, and the data to be stored cannot be stored and written, the terminal device immediately determines a target physical block required for storing and writing the data to be stored in all the physical blocks of the memory.
Specifically, for example, the terminal device may calculate, based on the data size of the data to be stored, a data size of data that remains to be stored using other physical blocks after writing the storage part data using all detected physical blocks of the memory, and then determine, based on the data size, a target physical block having an available storage space that is the same as the data size from among physical blocks in the memory that have not been subjected to the RDT operation.
It should be noted that, in this embodiment, the number of the target physical blocks may be specifically one or more.
And step D, after the RDT operation is executed aiming at the target physical block to determine that the RDT is successful, controlling the memory to write the data to be stored into the detected physical block and/or the target physical block for storage.
The method comprises the steps that after a terminal device determines a target physical block required by data to be stored in a memory, RDT operation is conducted on the target physical block, so that after the RDT operation on the target physical block is detected and determined to be successful, the memory is immediately controlled to simultaneously store and write the data to be stored in a programming mode on a detected physical block and the target physical block, or if available storage space which can be provided by the target physical block determined by the terminal device is larger than or equal to the data amount of all the data to be stored, the terminal device can control the memory to only be on the target physical block, and the data to be stored is stored in the programming mode.
In this embodiment, when acquiring that an operation instruction generated by a front end is a data storage instruction indicating data to be stored in a memory, a terminal device detects and determines a detected physical block that has been scanned by the memory through a first RDT operation at a current time, and detects and determines whether the detected physical block can store and write the data to be stored based on a data amount of the data to be stored; if the terminal equipment detects and determines that the detected physical block in the memory can store and write the data to be stored based on the data volume of the data to be stored, immediately controlling the memory to store and write the data to be stored on the detected physical block in a programming mode; or, if the terminal device detects and determines the detected physical block in the memory based on the data amount of the data to be stored, the data to be stored cannot be stored and written, the terminal device immediately determines the target physical block required for storing and writing the data to be stored in all the physical blocks of the memory, then, firstly, RDT operation is carried out on the target physical block, so that after detection and determination that the RDT operation on the target physical block is successful, the memory is immediately controlled to simultaneously store and write the data to be stored on the detected physical block and the target physical block in a programming mode, or, if the available storage space that the target physical block determined by the terminal device can provide by itself is already greater than or equal to the data amount of all the data to be stored, the terminal device can control the memory to store and write the data to be stored only on the target physical block in a programming mode.
Therefore, the terminal equipment can ensure that the physical blocks called by the control memory for data storage are all the physical blocks with basically guaranteed quality through RDT operation in the process of RDT operation on the memory, namely, the production quality of the memory is ensured. In addition, the RDT method of the memory does not need to execute RDT on the memory to consume a large amount of time and production cost like the traditional memory mass production process, and customer goods return and the like caused by the fact that the memory cannot respond to the front-end operation instruction because the memory does not detect a bad block through the RDT are avoided, so that the overall mass production efficiency of the memory is improved.
In addition, referring to fig. 3, an embodiment of the present invention further provides an RDT device of a memory, where the RDT device of the memory is applied to a terminal device, and the RDT device of the memory includes:
the detection module 10 is configured to detect whether an RDT record exists in a memory configured by a current terminal device, where the RDT record is a record of performing an RDT operation for the memory for the first time;
the background RDT module 20 is configured to perform a first RDT operation on the memory based on a background running mode if it is detected that the RDT record does not exist in the memory;
and the instruction response module 30 is configured to suspend the first RDT operation according to a preset operation instruction, and respond to and execute the operation instruction.
Preferably, the background RDT module 20 of the RDT device of the memory of the present invention is further configured to detect whether the execution of the running instruction is completed; and if so, continuing to restart the first RDT operation based on the background running mode.
Preferably, the RDT device of the memory of the present invention further comprises:
and the RDT record generating module is used for synchronously generating the RDT record of the memory when the first RDT operation is performed on the memory.
Preferably, the execution instructions include: data storage instructions, instruction response module 30, comprising:
the detection unit is used for detecting a detected physical block of the memory when the data storage instruction is acquired, wherein the detected physical block is a physical block which is subjected to the first RDT operation in the memory;
an execution unit to execute the data store instruction based on the detected physical block response.
Preferably, the execution unit includes:
the detection subunit is used for detecting the data to be stored pointed by the data storage instruction;
and the execution subunit is used for executing the data storage instruction according to the data volume of the data to be stored and the detected physical block response so as to write the data to be stored into the memory.
Preferably, the execution subunit includes:
the first determining subunit is used for determining whether the detected physical block can store and write the data to be stored according to the data volume;
and the first data storage subunit is used for controlling the memory to write the data to be stored into the detected physical block for storage if the fact that the detected physical block can store the data to be stored is determined.
Preferably, the execution subunit further includes:
a second determining subunit, configured to determine, if it is determined that the detected physical block cannot store and write the data to be stored, a target physical block to be used from physical blocks in the memory that do not perform an RDT operation;
and the second data storage subunit is used for controlling the memory to write the data to be stored into the detected physical block and/or the target physical block for storage after the RDT operation is executed on the target physical block to determine that the RDT is successful.
The steps implemented by each functional module of the RDT device of the memory in the invention when the controller runs can refer to the above-mentioned embodiment of the RDT method of the memory in the invention, and are not described herein again.
In addition, an embodiment of the present invention further provides a terminal device, where the terminal device includes: a memory, a processor and a memory RDT program stored on and executable on said processor, the memory RDT program when executed by said processor implementing the steps of the memory RDT method as described above.
The steps implemented when the RDT program of the memory running on the processor is executed may refer to various embodiments of the RDT method of the memory of the present invention, and are not described herein again.
In addition, an embodiment of the present invention further provides a computer storage medium applied to a computer, where the computer storage medium may be a non-volatile computer-readable computer storage medium, and the computer storage medium stores an RDT program of a memory, and when the RDT program of the memory is executed by a processor, the steps of the RDT method of the memory are implemented.
The steps implemented when the RDT program of the memory running on the processor is executed may refer to various embodiments of the RDT method of the memory of the present invention, and are not described herein again.
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or system that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or system. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in a process, method, article, or system that comprises the element.
The above-mentioned serial numbers of the embodiments of the present invention are merely for description and do not represent the merits of the embodiments.
Through the above description of the embodiments, those skilled in the art will clearly understand that the method of the above embodiments can be implemented by software plus a necessary general hardware platform, and certainly can also be implemented by hardware, but in many cases, the former is a better implementation manner. Based on such understanding, the technical solution of the present invention or portions thereof that contribute to the prior art may be embodied in the form of a software product, where the computer software product is stored in a computer storage medium (e.g., Flash memory, ROM/RAM, magnetic disk, optical disk), and includes several instructions for enabling a controller, which is used for controlling a terminal device (e.g., a mobile phone, a computer, a server, or a network device), to perform data reading and writing operations on the storage medium to execute the method according to the embodiments of the present invention.
The above description is only a preferred embodiment of the present invention, and not intended to limit the scope of the present invention, and all modifications of equivalent structures and equivalent processes, which are made by using the contents of the present specification and the accompanying drawings, or directly or indirectly applied to other related technical fields, are included in the scope of the present invention.
Claims (10)
1. An RDT method of a memory, wherein the RDT method of the memory is applied to a terminal device, and the RDT method of the memory comprises the following steps: s
Detecting whether an RDT record exists in a memory configured by current terminal equipment, wherein the RDT record is a record for performing RDT operation for the memory for the first time;
if the RDT record does not exist in the memory, performing first RDT operation on the memory based on a background running mode;
and pausing the first RDT operation according to a preset operation instruction, and responding to and executing the operation instruction.
2. The RDT method for memory of claim 1, wherein after said steps of suspending said first RDT operation according to a preset execution instruction and in response to executing said execution instruction, further comprising:
detecting whether the execution of the running instruction is finished;
and if so, continuing to restart the first RDT operation based on the background running mode.
3. The RDT method for a memory according to claim 1 or 2, characterized in that it further comprises:
and synchronously generating the RDT record of the memory when the first RDT operation is carried out on the memory.
4. The RDT method for memory of claim 1, wherein the execute instruction comprises: data storage instructions, said step of executing said operational instructions in response thereto comprising:
when the data storage instruction is acquired, detecting a detected physical block of the memory, wherein the detected physical block is a physical block which is already subjected to the first RDT operation in the memory;
executing the data store instruction based on the detected physical block response.
5. The RDT method for memory of claim 4, wherein said step of executing said data store instruction based on said detected physical block response comprises:
detecting data to be stored pointed by the data storage instruction;
and executing the data storage instruction according to the data quantity of the data to be stored and the detected physical block response so as to write the data to be stored into the memory.
6. The RDT method for memory of claim 5, wherein said step of executing said data store instruction to write said data to be stored to said memory in accordance with said data amount of said data to be stored and said detected physical block response comprises:
determining whether the detected physical block can store and write the data to be stored according to the data volume;
and if the detected physical block can store and write the data to be stored, controlling the memory to write the data to be stored into the detected physical block for storage.
7. The RDT method for a memory according to claim 6, wherein after the step of determining whether the detected physical block can store and write the data to be stored according to the data amount, further comprising:
if the detected physical block is determined to be incapable of storing and writing the data to be stored, determining a target physical block to be used from physical blocks of the memory which are not subjected to RDT operation;
after the RDT operation is executed aiming at the target physical block to determine that the RDT is successful, the memory is controlled to write the data to be stored into the detected physical block and/or the target physical block for storage.
8. An RDT apparatus of a memory, wherein the RDT apparatus of the memory is applied to a terminal device, and the RDT apparatus of the memory comprises:
the terminal device comprises a detection module, a storage module and a control module, wherein the detection module is used for detecting whether an RDT record exists in a memory configured by a current terminal device, and the RDT record is a record for executing RDT operation for the memory for the first time;
the background RDT module is used for carrying out primary RDT operation on the memory based on a background running mode if the RDT record does not exist in the memory;
and the instruction response module is used for pausing the first RDT operation according to a preset operation instruction and responding to and executing the operation instruction.
9. A terminal device, characterized in that the terminal device comprises: memory, a processor and a memory RDT program stored on the memory and executable on the processor, the memory RDT program when executed by the processor implementing the steps of the memory RDT method of any one of claims 1 to 7.
10. A computer storage medium, characterized in that the computer storage medium has stored thereon a computer program which, when being executed by a processor, carries out the steps of the RDT method of the memory according to one of claims 1 to 7.
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| CN202111089579.XA CN113961404A (en) | 2021-09-16 | 2021-09-16 | RDT method and device of memory, terminal equipment and storage medium |
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| CN202111089579.XA CN113961404A (en) | 2021-09-16 | 2021-09-16 | RDT method and device of memory, terminal equipment and storage medium |
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