CN113957416B - Semiconductor junction type ZnO film deposition equipment - Google Patents
Semiconductor junction type ZnO film deposition equipment Download PDFInfo
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- CN113957416B CN113957416B CN202111231325.7A CN202111231325A CN113957416B CN 113957416 B CN113957416 B CN 113957416B CN 202111231325 A CN202111231325 A CN 202111231325A CN 113957416 B CN113957416 B CN 113957416B
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- 230000008021 deposition Effects 0.000 title claims abstract description 38
- 239000004065 semiconductor Substances 0.000 title claims abstract description 17
- 238000007789 sealing Methods 0.000 claims abstract description 16
- 238000010438 heat treatment Methods 0.000 claims description 34
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 20
- 239000003381 stabilizer Substances 0.000 claims description 8
- 230000005540 biological transmission Effects 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 2
- 238000000427 thin-film deposition Methods 0.000 claims 7
- 238000000151 deposition Methods 0.000 claims 1
- 239000010408 film Substances 0.000 claims 1
- 238000005507 spraying Methods 0.000 claims 1
- 239000012495 reaction gas Substances 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 239000007921 spray Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002351 wastewater Substances 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention belongs to the technical field of oxide film deposition equipment, and particularly relates to semiconductor junction type ZnO film deposition equipment, which comprises a bottom plate, wherein the upper end of the bottom plate is fixedly connected with a vertical plate, the upper side of the front end of the vertical plate is fixedly connected with a box body, the lower end of the box body is provided with an opening, the top of the inner side of the box body is fixedly connected with a sprayer, a feed pipe of the sprayer penetrates through the upper end of the box body, the top of the inner side of the box body is provided with an air pressure sensor, the upper end of the bottom plate is fixedly connected with an electric lifting mechanism, and the lifting end of the upper side of the electric lifting mechanism is fixedly connected with a base which can be in sealing sliding connection with the inner wall of the box body.
Description
Technical Field
The invention belongs to the technical field of oxide film deposition equipment, and particularly relates to semiconductor junction type ZnO film deposition equipment.
Background
At present, the deposition space of the existing ZnO film deposition equipment is certain, because the ZnO film needs to be stabilized in a proper air pressure range during deposition, partial reaction gas needs to be released to reduce the air pressure when the air pressure in the deposition space is too high, however, the mode of adjusting the air pressure can discharge the reaction gas into the external environment, so that the reaction gas is wasted, and the external environment is polluted, and aiming at the problems, the semiconductor junction type ZnO film deposition equipment is proposed.
Disclosure of Invention
The purpose of the invention is that: aims to provide a semiconductor junction type ZnO film deposition device which is used for solving the problems existing in the background technology.
In order to achieve the technical purpose, the invention adopts the following technical scheme:
the utility model provides a semiconductor junction type ZnO film deposition equipment, includes the bottom plate, bottom plate upper end fixedly connected with riser, riser front end upside fixedly connected with box, the box lower extreme all has the opening, box inboard top fixedly connected with spray thrower, the inlet pipe of spray thrower runs through the box upper end, box inboard top is equipped with air pressure sensor, bottom plate upper end fixedly connected with electric lift mechanism, the lift end fixedly connected with of electric lift mechanism upside can with box inner wall sealing sliding connection's base, the bottom plate upper end is equipped with the controller, spray thrower, air pressure sensor and electric lift mechanism all with controller electric connection.
The electric lifting mechanism comprises a stepping motor fixedly connected to the upper end of the bottom plate, a screw rod is connected to the output end of the stepping motor in a transmission mode, a threaded cylinder fixedly connected with the lower end of the base is connected to the outer side of the screw rod in a threaded mode, and a plurality of telescopic rods fixedly connected with the bottom plate are fixedly connected to the lower end of the base.
The base includes the lifter plate, the first spout that runs through the lifter plate upper end has all been seted up to both ends about the lifter plate, two the second spout has all been seted up to the front and back wall of first spout, two equal sliding connection has the slider in the first spout, two both sides all are equipped with the stopper with second spout assorted about the slider relative one end, two the upper end of slider opposite side all is equipped with first inclined plane, the circular slot of two first spouts of intercommunication has been seted up at the lifter plate middle part, the circular slot is equipped with the spring, lifter plate upper end fixedly connected with hot plate, the hot plate upside is equipped with the rectangle frame, the equal fixedly connected with kicking block in lower part of rectangle frame left and right sides, two the lower extreme of kicking block relative one side all is equipped with the second inclined plane, two the second inclined plane respectively with two first inclined plane looks butt, the recess with kicking block assorted is all seted up to the hot plate left and right sides, rectangle frame assorted annular groove has been seted up with the rectangle frame to the hot plate upper end.
A sealing groove is formed in the side face of the heating plate, and a sealing ring is assembled in the sealing groove.
The middle part of the rectangular frame is provided with a stabilizer bar, and the upper end of the heating plate is provided with a strip-shaped groove matched with the stabilizer bar.
The heating cavity is internally formed in the heating plate, two water pipes are fixedly connected to the lower end of the heating plate and are communicated with the second heating cavity, the other ends of the two water pipes penetrate through the lower end of the lifting plate, and the heating plate and the rectangular frame are made of heat conducting materials.
The two water pipes are distributed on the left and right sides of the same diagonal line of the heating plate.
The top of the box body is provided with an exhaust valve which is electrically connected with the controller.
The mounting grooves are formed in the left side and the right side of the lower end of the box body, rotating rollers matched with the sliding blocks are rotatably connected in the two mounting grooves, and the diameter of each rotating roller is equal to the wall thickness of the box body.
The invention can make the air pressure in the deposition space in a reasonable pressure range value by dynamically adjusting the size of the deposition space, and avoid the influence of overlarge or overlarge air pressure on the deposition effect.
Drawings
The invention may be further illustrated by means of non-limiting examples given in the accompanying drawings.
FIG. 1 is a schematic view showing the structure of an embodiment of a semiconductor junction type ZnO film deposition apparatus according to the present invention;
FIG. 2 is a top view of the case of the present invention;
FIG. 3 is a schematic view of the structure of the base of the present invention;
FIG. 4 is a schematic cross-sectional view of a base of the present invention;
FIG. 5 is a schematic view of a lifter plate according to the present invention;
FIG. 6 is a schematic view of a slider according to the present invention.
The main reference numerals are as follows:
the device comprises a bottom plate 1, a vertical plate 2, a box body 21, a sprayer 22, a feed pipe 221, an air pressure sensor 23, a base 24, a controller 25, a stepping motor 3, a screw rod 31, a screw cylinder 32, a telescopic rod 33, a lifting plate 34, a first sliding groove 35, a second sliding groove 36, a sliding block 37, a limiting block 38, a first inclined surface 39, a circular groove 4, a spring 41, a heating plate 42, a rectangular frame 43, a top block 44, a second inclined surface 45, a limiting groove 46, a rectangular annular groove 47, a sealing ring 471, a stabilizing rod 48, a strip groove 49, a heating cavity 51, a water pipe 54, an exhaust valve 55 and a rotating roller 56.
Detailed Description
In order that those skilled in the art will better understand the present invention, the following technical scheme of the present invention will be further described with reference to the accompanying drawings and examples.
As shown in fig. 1-6, the semiconductor junction type ZnO film deposition apparatus of the present invention includes a base plate 1, a riser 2 is fixedly connected to the upper end of the base plate 1, a box 21 is fixedly connected to the upper side of the front end of the riser 2, openings are formed at the lower end of the box 21, a sprayer 22 is fixedly connected to the top of the inner side of the box 21, a feed pipe 221 of the sprayer 22 penetrates through the upper end of the box 21, an air pressure sensor 23 is disposed at the top of the inner side of the box 21, an electric lifting mechanism is fixedly connected to the upper end of the base plate 1, a base 24 capable of being in sealing sliding connection with the inner wall of the box 21 is fixedly connected to the upper end of the base plate 1, a controller 25 is disposed at the upper end of the base plate 1, and the sprayer 22, the air pressure sensor 23 and the electric lifting mechanism are all electrically connected to the controller 25.
When the device is used, the feeding pipe 221 of the sprayer 22 is communicated with a generation source of reaction gas, the reaction gas can enter the sprayer 22 through the feeding pipe 221, then the electric lifting mechanism is controlled by the controller 25 to drive the base 24 to move downwards, the base 24 is withdrawn from the deposition space, the substrate is placed at the upper end of the base 24, the electric lifting mechanism is controlled by the controller 25 to drive the base 24 to move upwards, the base 24 drives the substrate to enter the middle part of the inner side of the box 21, the base 24 can be connected with the inner wall of the box 21 in a sealing sliding manner after entering the box 21, so that an opening at the lower side of the box 21 is sealed, at the moment, a relatively airtight deposition space can be formed inside the box 21, at the moment, the sprayer 22 is controlled by the controller 25 to be opened, the reaction gas is uniformly sprayed into the deposition space by the sprayer 22, the reaction gas entering the deposition space can be gradually deposited on the substrate, and in the deposition space is monitored by the air pressure sensor 23 in real time in the deposition process, and a reasonable pressure range value is arranged in the controller 25;
when the pressure value in the deposition space is greater than the reasonable pressure range value, the controller 25 controls the electric lifting mechanism to drive the base 24 to move downwards, so that the volume of the deposition space is increased, the corresponding air pressure is reduced after the volume is increased, the air pressure in the deposition space can be reduced, and after the pressure value in the deposition space returns to the reasonable pressure range value, the controller 25 controls the electric lifting mechanism to stop working;
when the pressure value in the deposition space is smaller than the reasonable pressure range value, the controller 25 controls the electric lifting mechanism to drive the base 24 to move upwards, so that the volume of the deposition space is reduced, the corresponding air pressure is increased after the volume is reduced, the air pressure value in the deposition space can be increased, and after the pressure value in the deposition space returns to the reasonable pressure range value, the controller 25 controls the electric lifting mechanism to stop working;
after a layer of ZnO transparent conductive film is deposited on the upper surface of the substrate, the sprayer 22 is controlled to be closed by the controller 25, then after the reaction gas in the deposition space is deposited, the electric lifting mechanism is controlled to move downwards to the lowest position, so that the base 24 is separated from the box body 21, and at the moment, a user can take down the substrate on which the ZnO transparent conductive film is deposited;
the mode of dynamically adjusting the size of the deposition space can enable the air pressure in the deposition space to be in a reasonable pressure range value, so that the influence of overlarge or overlarge air pressure on the deposition effect is avoided.
The electric lifting mechanism comprises a stepping motor 3 fixedly connected to the upper end of the base plate 1, a screw rod 31 is connected to the output end of the stepping motor 3 in a transmission manner, a threaded cylinder 32 fixedly connected to the lower end of the base 24 is connected to the outer side of the screw rod 31 in a threaded manner, and a plurality of telescopic rods 33 fixedly connected to the base plate 1 are fixedly connected to the lower end of the base 24.
The base 24 can be guided and limited by the telescopic rods 33, so that the base 24 can only move up and down, the screw rod 31 can be driven to rotate when the stepping motor 3 is electrified, and the screw rod 31 is in threaded connection with the threaded cylinder 32, so that the screw rod 31 can be matched with the threaded cylinder 32 to drive the base 24 to move up and down according to the rotating direction when the screw rod 31 rotates, and the height of the base 24 can be adjusted.
The base 24 includes lifter plate 34, the first spout 35 that runs through lifter plate 34 upper end has all been seted up at both ends about lifter plate 34, second spout 36 has all been seted up to the front and back wall of two first spouts 35, all sliding connection has slider 37 in two first spouts 35, both sides all are equipped with the stopper 38 with second spout 36 assorted about two slider 37 relative one end, the upper end of two slider 37 opposite sides all is equipped with first inclined plane 39, lifter plate 34 middle part has seted up the circular slot 4 of two first spouts 35 of intercommunication, circular slot 4 is equipped with spring 41, lifter plate 34 upper end fixedly connected with hot plate 42, hot plate 42 upside is equipped with rectangular frame 43, the lower part of rectangular frame 43 both sides all fixedly connected with kicking block 44, the lower extreme of two opposite sides of kicking block 44 all is equipped with second inclined plane 45, two second inclined planes 45 respectively with two first inclined plane 39 butt, the limit groove 46 with kicking block 44 assorted is all seted up in both sides about hot plate 42, rectangular frame 43 assorted annular groove 47 has been seted up with rectangular frame 43 to the hot plate upper end.
The two limiting grooves 46 can limit the two top blocks 44, so that the two top blocks 44 can only move up and down;
the spring 41 pushes the two sliding blocks 37 to the left and right sides respectively in a natural state, if the base 24 is positioned in the box 21 at the moment, the outer ends of the two sliding blocks 37 are respectively abutted against the left and right walls of the inner side of the box 21, at the moment, the second inclined surfaces 45 of the lower sides of the two jacking blocks 44 are respectively abutted against the first inclined surfaces 39 of the upper sides of the two sliding blocks 37, in the state, the rectangular frame 43 is sunk in the rectangular annular groove 47, the upper ends of the rectangular frame 43 are flush with the upper end surface of the heating plate 42, when the base 24 moves downwards and is retracted out of the box 21, the outer ends of the two sliding blocks 37 are not limited by the inner wall of the box 21 to move, so that the two sliding blocks 37 are pushed outwards under the action of the spring 41, at the moment, the two sliding blocks 37 use the first inclined surfaces 39 to push the second inclined surfaces 45 of the two jacking blocks 44 to enable the two jacking blocks 44 to move upwards, and the two jacking blocks 44 are pushed out of the rectangular annular groove 47 when moving upwards, so that a base plate placed at the upper ends of the rectangular frame 43 and the heating plate 42 are jacked up, and the base plate 42 are separated from the upper ends of the heating plate 42, and a user can take the base 24 from the upper ends conveniently;
the limiting block 38 is matched with the second chute 36 to limit the sliding block 37, so that the sliding block 37 is prevented from being completely separated from the first chute 35;
when the base 24 moves from the lower part of the box body 21 to the inner part of the box body, the part of the first inclined surface 39 extending out of the first sliding groove 35 is abutted against the lower end surface of the box body 21, so that an inward movement force is applied to the sliding block 37, the sliding block 37 is retracted into the first sliding groove 35 against the elastic force of the spring 41, after the two sliding blocks 37 are completely retracted into the box body 21, the lower ends of the two jacking blocks 44 also move downwards along the direction of the first inclined surface 39, the rectangular frame 43 is completely sunk into the rectangular ring groove 47, and the substrate placed at the upper end of the rectangular frame 43 is abutted against the upper ends of the rectangular frame 43 and the heating plate 42.
A sealing groove is formed in the side face of the heating plate 42, and a sealing ring 471 is arranged in the sealing groove.
The sealing ring 471 can seal the gap between the heating plate 42 and the inner wall of the case 21.
A stabilizer bar 48 is arranged in the middle of the rectangular frame 43, and a strip-shaped groove 49 matched with the stabilizer bar 48 is arranged at the upper end of the heating plate 42.
The stabilizer bar 48 can enhance the stability of the rectangular frame 43, and the bar-shaped groove 49 is used for accommodating the stabilizer bar 48.
The heating chamber 51 has been seted up to the hot plate 42 inside, and hot plate 42 lower extreme fixedly connected with two water pipes 54, two water pipes 54 all are linked together with the second heating chamber 52, and two water pipe 54 other ends all run through lifter plate 34 lower extreme, and hot plate 42 and rectangular frame 43 all adopt the heat conduction material to make.
When the device is used, the lower ends of the two water pipes 54 are respectively connected with the water outlet end of a hot water source and the water inlet end of the wastewater collector, so that hot water enters the heating cavity 51 through one of the water pipes 54, the heated water which is filled in the heating cavity 51 is discharged into the wastewater collector through the other water pipe 54, the hot water which enters the heating cavity 51 can heat the heating plate 42, and the heating plate 42 can heat the rectangular frame 43 at the same time after being heated, and therefore, the rectangular frame 43 and the heating plate 42 can heat the substrate at the same time, and the device can perform film deposition on the substrate to be heated.
Two water tubes 54 are distributed on the left and right sides of the same diagonal of the heating plate 42.
The top of the box 21 is provided with an exhaust valve 55, and the exhaust valve 55 is electrically connected with the controller 25.
The controller 25 is internally provided with a safety pressure range value, when the pressure value in the deposition space is larger than the safety pressure range value, the controller 25 controls the exhaust valve 55 to be opened, and then pressure relief can be performed, so that safety accidents caused by overlarge internal pressure are avoided.
Mounting grooves are formed in the left side and the right side of the lower end of the box body 21, rotating rollers 56 matched with the sliding blocks 37 are rotatably connected in the two mounting grooves, and the diameter of each rotating roller 56 is equal to the wall thickness of the box body 21.
The arrangement of the roller 56 can convert sliding friction between the first inclined surface 39 and the roller 56 into rolling friction, so that the slider 37 can be retracted more smoothly.
The above embodiments are merely illustrative of the principles of the present invention and its effectiveness, and are not intended to limit the invention. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the invention. Accordingly, it is intended that all equivalent modifications and variations of the invention be covered by the claims of this invention, which are within the skill of those skilled in the art, can be made without departing from the spirit and scope of the invention disclosed herein.
Claims (8)
1. A semiconductor junction ZnO film deposition device is characterized in that: the automatic spraying device comprises a bottom plate, wherein the upper end of the bottom plate is fixedly connected with a vertical plate, the upper side of the front end of the vertical plate is fixedly connected with a box body, the lower end of the box body is provided with openings, the top of the inner side of the box body is fixedly connected with a sprayer, a feeding pipe of the sprayer penetrates through the upper end of the box body, the top of the inner side of the box body is provided with an air pressure sensor, the upper end of the bottom plate is fixedly connected with an electric lifting mechanism, the upper end of the electric lifting mechanism is fixedly connected with a base which can be in sealing sliding connection with the inner wall of the box body, the upper end of the bottom plate is provided with a controller, and the sprayer, the air pressure sensor and the electric lifting mechanism are all electrically connected with the controller;
the base includes the lifter plate, the first spout that runs through the lifter plate upper end has all been seted up to both ends about the lifter plate, two the second spout has all been seted up to the front and back wall of first spout, two equal sliding connection has the slider in the first spout, two both sides all are equipped with the stopper with second spout assorted about the slider relative one end, two the upper end of slider opposite side all is equipped with first inclined plane, the circular slot of two first spouts of intercommunication has been seted up at the lifter plate middle part, the circular slot is equipped with the spring, lifter plate upper end fixedly connected with hot plate, the hot plate upside is equipped with the rectangle frame, the equal fixedly connected with kicking block in lower part of rectangle frame left and right sides, two the lower extreme of kicking block relative one side all is equipped with the second inclined plane, two the second inclined plane respectively with two first inclined plane looks butt, the recess with kicking block assorted is all seted up to the hot plate left and right sides, rectangle frame assorted annular groove has been seted up with the rectangle frame to the hot plate upper end.
2. A semiconductor junction type ZnO thin film deposition apparatus according to claim 1, wherein: the electric lifting mechanism comprises a stepping motor fixedly connected to the upper end of the bottom plate, a screw rod is connected to the output end of the stepping motor in a transmission mode, a threaded cylinder fixedly connected with the lower end of the base is connected to the outer side of the screw rod in a threaded mode, and a plurality of telescopic rods fixedly connected with the bottom plate are fixedly connected to the lower end of the base.
3. A semiconductor junction type ZnO thin film deposition apparatus according to claim 1, wherein: a sealing groove is formed in the side face of the heating plate, and a sealing ring is assembled in the sealing groove.
4. A semiconductor junction type ZnO thin film deposition apparatus according to claim 1, wherein: the middle part of the rectangular frame is provided with a stabilizer bar, and the upper end of the heating plate is provided with a strip-shaped groove matched with the stabilizer bar.
5. A semiconductor junction type ZnO thin film deposition apparatus according to claim 1, wherein: the heating cavity is internally formed in the heating plate, two water pipes are fixedly connected to the lower end of the heating plate and are communicated with the second heating cavity, the other ends of the two water pipes penetrate through the lower end of the lifting plate, and the heating plate and the rectangular frame are made of heat conducting materials.
6. A semiconductor junction type ZnO thin film deposition apparatus according to claim 1, wherein: the two water pipes are distributed on the left and right sides of the same diagonal line of the heating plate.
7. A semiconductor junction type ZnO thin film deposition apparatus according to claim 1, wherein: the top of the box body is provided with an exhaust valve which is electrically connected with the controller.
8. A semiconductor junction type ZnO thin film deposition apparatus according to claim 1, wherein: the mounting grooves are formed in the left side and the right side of the lower end of the box body, rotating rollers matched with the sliding blocks are rotatably connected in the two mounting grooves, and the diameter of each rotating roller is equal to the wall thickness of the box body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111231325.7A CN113957416B (en) | 2021-10-22 | 2021-10-22 | Semiconductor junction type ZnO film deposition equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111231325.7A CN113957416B (en) | 2021-10-22 | 2021-10-22 | Semiconductor junction type ZnO film deposition equipment |
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| Publication Number | Publication Date |
|---|---|
| CN113957416A CN113957416A (en) | 2022-01-21 |
| CN113957416B true CN113957416B (en) | 2024-01-23 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111231325.7A Active CN113957416B (en) | 2021-10-22 | 2021-10-22 | Semiconductor junction type ZnO film deposition equipment |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH093649A (en) * | 1995-06-16 | 1997-01-07 | Ebara Corp | Vapor growth device for thin film |
| TW430920B (en) * | 1997-01-14 | 2001-04-21 | Ind Tech Res Inst | Substrate carrying device |
| CN112267104A (en) * | 2020-11-02 | 2021-01-26 | 张亚 | Chemical vapor deposition method preparation film device |
-
2021
- 2021-10-22 CN CN202111231325.7A patent/CN113957416B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH093649A (en) * | 1995-06-16 | 1997-01-07 | Ebara Corp | Vapor growth device for thin film |
| TW430920B (en) * | 1997-01-14 | 2001-04-21 | Ind Tech Res Inst | Substrate carrying device |
| CN112267104A (en) * | 2020-11-02 | 2021-01-26 | 张亚 | Chemical vapor deposition method preparation film device |
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| Publication number | Publication date |
|---|---|
| CN113957416A (en) | 2022-01-21 |
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