CN113956398A - Resin for water-developable photoresist and preparation method thereof - Google Patents
Resin for water-developable photoresist and preparation method thereof Download PDFInfo
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- CN113956398A CN113956398A CN202111197679.4A CN202111197679A CN113956398A CN 113956398 A CN113956398 A CN 113956398A CN 202111197679 A CN202111197679 A CN 202111197679A CN 113956398 A CN113956398 A CN 113956398A
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- resin
- water
- photoresist
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F224/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a heterocyclic ring containing oxygen
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F222/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides, or nitriles thereof
- C08F222/10—Esters
- C08F222/12—Esters of phenols or saturated alcohols
- C08F222/14—Esters having no free carboxylic acid groups, e.g. dialkyl maleates or fumarates
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
Abstract
The invention belongs to the technical field of photoresist resin oligomer, and particularly relates to a resin for a water-developable photoresist and a preparation method thereof. Maleic acid diester, acetalized polyhydroxy cyclohexyl ethylene and methacrylate are used as polymerization monomers, dissolved in an organic solvent, and subjected to free radical polymerization reaction under the conditions of a thermal free radical initiator and a chain transfer agent to prepare the resin for the water-developable photoresist. According to the invention, acetalized polyhydroxy cyclohexyl ethylene is used as a polymerization monomer, during the photoetching reaction process, the decomposition speed of the formed acetal acid catalyzed ether bond is higher, and a large amount of hydroxyl is generated in an exposure area, so that the developing speed of the photoresist is improved, and meanwhile, due to the existence of a cyclohexane structure, the anti-etching capability of the photoresist can be improved.
Description
Technical Field
The invention belongs to the technical field of photoresist resin oligomer, in particular relates to a resin for a water-developable photoresist and a preparation method thereof, and belongs to a vinyl resin capable of being developed by an aqueous solution.
Background
Ultraviolet photoresists are composed mainly of resin, monomer, photosensitizer, other additives, and under irradiation of light, the photosensitizer cleaves to generate an active substance which causes a chemical reaction of the resin to change the properties of the resin, resulting in a change in the solubility of the resin in a solvent or an aqueous alkali solution, followed by development to prepare a pattern.
The photoresist resin mainly comprises two types, one type is photo-initiated polymerization reaction, and the resin is not dissolved in a solvent or water after photo-polymerization to form a cross-linked film which is generally called as a negative photoresist; in the other method, after light irradiation, the photosensitizer generates strong acid, the strong acid causes structural change of the resin, generally, ester bonds of the resin are broken to generate acid, so that the resin is changed from oil solubility to water solubility, and the photoresist is called as positive photoresist.
The invention is the synthesis of vinyl resin used for positive photoresist, because acetalized polyhydroxy cyclohexyl ethylene, methacrylate and maleic acid diester are all insoluble in water, the polymer is insoluble in water, but under the irradiation of light, the acid generated by photosensitizer can catalyze ester bond to decompose, the generated acid can lead the resin to become water-soluble, thereby developing with water and achieving the purpose of photoetching.
Disclosure of Invention
In order to solve the defects of low activity, low hydrolysis speed, poor physical and mechanical properties and the like of photoresist resin in the photoreaction process in the prior art, the invention provides the resin for the water-developable photoresist and the preparation method thereof, and the photoreaction activity, the ester hydrolysis speed, the development speed and the physical and mechanical properties of the resin are adjusted by adjusting the concentrations of different polymerization monomers in the resin preparation process; the polymerization speed is controlled by adjusting the polymerization temperature, the polymerization time and the dosage of the initiator during the polymerization reaction, and the weight average molecular weight, the molecular weight distribution index and the like of the obtained resin are obtained, so that the vinyl resin meeting the requirements of the water-developable photoresist is prepared.
The invention is realized by the following technical scheme:
the invention provides a resin for a water-developable photoresist, which has the following structural formula:
wherein R is1、R2、R3The general structural formula is as follows:
R5is H or CH3Y is 0 to 5, preferably, y is 0 to 2;
R4is alkyl or cycloalkyl;
r is hydrogen or alkyl or
Further, the weight average molecular weight of the resin is 2000-50000, and the molecular weight distribution index is 1.1-1.8.
The invention also provides a preparation method of the resin for the water-developable photoresist, which adopts maleic acid diester, acetalized polyhydroxy cyclohexyl ethylene and methacrylate ester as polymerization monomers to prepare the resin for the water-developable photoresist through free radical polymerization.
Further, the free radical polymerization reaction is to dissolve a polymerization monomer in an organic solvent, and react for 10-420 min at a polymerization temperature of 50-180 ℃ through a thermal free radical initiator and a chain transfer agent.
Preferably, the mass content of the maleic acid diester in the polymerized monomer is 10-80% of the total content, the mass content of the acetalized polyhydroxy cyclohexyl ethylene in the polymerized monomer is 20-80% of the total content, and the mass content of the methacrylate in the polymerized monomer is 0-30% of the total content.
Preferably, the thermal radical initiator is a peroxide initiator, such as benzoyl peroxide, tert-butyl peroxide and the like; or/and azo compound initiator, such as azodiisobutyronitrile, and the dosage of the thermal free radical initiator is 1-10% of the total mass of the polymerization monomer.
Preferably, the chain transfer agent is a mercaptan chain transfer agent, such as dodecanethiol, decamercaptan, etc., and the amount of the chain transfer agent is 0 to 5% of the total mass of the polymerized monomers.
Preferably, the organic solvent is one or more of ethylene glycol methyl ether, propylene glycol methyl ether, ethylene glycol methyl ether acetate, propylene glycol methyl ether acetate, ethyl lactate, butyl acetate and methyl amyl ketone.
Compared with the prior art, the invention has the beneficial effects that:
(1) the invention adopts acetalized polyhydroxy cyclohexyl ethylene, methacrylate and maleic acid diester to carry out polymerization reaction to obtain vinyl resin, during the photoetching reaction, the formed acetal acid catalyzes ether bond to decompose more quickly, and a large amount of hydroxyl is generated in an exposure area, thereby improving the developing speed of the photoresist, and simultaneously, the water solubility of the prepared resin can be controlled by adjusting the acetal structure and the acetal quantity.
(2) Compared with the acrylate in the photoresist in the prior art, the acrylate in the photoresist falls off in the acid catalytic decomposition process, and the group is large, so that the deformation of the photoresist film is easily caused; the resin obtained by polymerizing the acetalized polyhydroxy cyclohexyl ethylene is free of formaldehyde during acid-catalyzed hydrolysis, the radical volume is small, the obtained photoresist film is more uniform, and the quality of the photoresist is improved.
(3) On the other hand, because the acetalized polyhydroxy cyclohexyl ethylene structure contains a cyclic group, the carbon-hydrogen ratio is improved, the etching resistance of the prepared photoresist is favorably improved, and the quality of the photoresist is improved.
(4) From the aspect of raw material cost, the synthesis of acetal is very simple and convenient, the product is easy to purify, the stability is good, the price is low, and the method is favorable for industrial production.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the invention, its application, or uses. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1
The preparation method of the resin for the water-developable photoresist comprises the following steps:
500 grams of the following polymerized monomers: 150 g of dimethyl maleate (accounting for 30 percent of the total mass of the polymerized monomers), 200 g of acetalized polyhydroxy cyclohexyl ethylene (accounting for 40 percent of the total mass of the polymerized monomers), 150 g of tert-butyl methacrylate (accounting for 30 percent of the total mass of the polymerized monomers), 6 g of benzoyl peroxide serving as a thermal radical initiator, 2000 g of propylene glycol methyl ether serving as a solvent, and 0.3 g of dodecyl mercaptan serving as a chain transfer agent are added into a polymerization reactor, nitrogen is introduced for 20 minutes to remove oxygen in the system, then the temperature is raised to 120 ℃ to carry out radical polymerization, then the thermal radical initiators, namely benzoyl peroxide, are supplemented for 0.3 g for three times (every 30 minutes), the reaction is continued for 200 minutes, the temperature is lowered to room temperature, and the resin for the water-developable photoresist is obtained.
The molecular weight of the resulting product resin was characterized as 12000, with a molecular weight distribution index of 1.76.
The resin prepared in this example was used as a base material, 1.75% of a photoacid generator (iodonium salt) was added thereto, spin-coated at 2000 rpm, dried to a film thickness of 5 μm, exposed to a high-pressure mercury lamp for 30 seconds, postbaked at 120 ℃ for 2 minutes, and developed with alkali water to prepare a resist pattern.
Example 2
600 grams of the following polymerized monomers: 300 g of diethyl maleate (accounting for 50 percent of the total mass of the polymerized monomers), 240 g of acetalized polyhydroxycyclohexylethylene (accounting for 40 percent of the total mass of the polymerized monomers), 60 g of butyl methacrylate (accounting for 10 percent of the total mass of the polymerized monomers), 5 g of tert-butyl peroxide serving as a thermal radical initiator, 2200 g of ethylene glycol monomethyl ether acetate serving as a solvent and 0.8 g of dodecyl mercaptan serving as a chain transfer agent are added into a polymerization reactor, nitrogen is introduced for 20 minutes to remove oxygen in the system, then the temperature is raised to 90 ℃ to carry out a free radical polymerization reaction, 0.4 g of tert-butyl peroxide serving as the thermal radical initiator is replenished for three times (every 30 minutes), the reaction is carried out for 120 minutes, the temperature is lowered to room temperature, and the required resin for the water-developable photoresist is obtained.
The molecular weight of the obtained product resin is 19000 and the molecular weight distribution index is 1.83.
The resin prepared in this example was used as a base material, 1.5% of a photoacid generator (iodonium salt) was added thereto, spin-coated at 3000 rpm, dried to a film thickness of 3 μm, exposed to a high-pressure mercury lamp for 30 seconds, postbaked at 120 ℃ for 2 minutes, and developed with alkali water to prepare a resist pattern.
Example 3
800 grams of the following polymerized monomers: 560 g of dimethyl maleate (accounting for 70 percent of the total mass of the polymerized monomers), 240 g of acetalized polyhydroxy cyclohexyl ethylene (accounting for 30 percent of the total mass of the polymerized monomers), 10 g of azodiisobutyronitrile serving as a thermal free radical initiator, 2800 g of propylene glycol monomethyl ether acetate serving as a solvent and 1 g of decamercaptan serving as a chain transfer agent are added into a polymerization reactor, nitrogen is introduced for 20 minutes to remove oxygen in the system, then the temperature is raised to 130 ℃ for free radical polymerization reaction, 0.1 g of each azodiisobutyronitrile serving as a thermal initiator is replenished for three times (every 30 minutes), the reaction is carried out for 480 minutes, the temperature is reduced to room temperature, and the material is discharged, namely the required resin for the water-developable photoresist.
The molecular weight of the obtained product resin is 30000 and the molecular weight distribution index is 1.76.
The resin prepared in this example was used as a base material, 1.55% of a photoacid generator (sulfonium salt) was added thereto, spin-coated at 2000 rpm, dried to have a film thickness of 4 μm, exposed to a high-pressure mercury lamp for 50 seconds, postbaked at 120 ℃ for 2 minutes, and developed with alkali water to prepare a resist pattern.
Example 4
500 grams of the following polymerized monomers: 200 g of dibutyl maleate (accounting for 40 percent of the total mass of the polymerized monomers), 250 g of acetalized polyhydroxy cyclohexyl ethylene (accounting for 50 percent of the total mass of the polymerized monomers), 50 g of tert-butyl methacrylate (accounting for 10 percent of the total mass of the polymerized monomers), 8 g of azodiisobutyronitrile serving as a thermal radical initiator, 2200 g of solvent butyl acetate and 0.3 g of decamercaptan serving as a chain transfer agent are added into a polymerization reactor, nitrogen is introduced for 20 minutes to remove oxygen in the system, then the temperature is raised to 140 ℃ to carry out free radical polymerization reaction, 0.3 g of azodiisobutyronitrile serving as the thermal radical initiator is replenished for three times (every 30 minutes), the reaction is carried out for 80 minutes, the temperature is lowered to room temperature, and the required resin for the water-developing photoresist is obtained.
The molecular weight of the obtained product resin is 6000 through characterization, and the molecular weight distribution index is 1.4.
The resin prepared in this example was used as a base material, 1.85% of a photoacid generator (sulfonium salt) was added thereto, spin-coated at 2000 rpm, dried to a film thickness of 3 μm, exposed to a high-pressure mercury lamp for 25 seconds, postbaked at 120 ℃ for 3 minutes, and developed with alkali water to prepare a resist pattern.
Example 5
700 grams of the following polymerized monomers: 140 g of diethyl maleate (accounting for 40 percent of the total mass of the polymerized monomers), 490 g of acetalized polyhydroxycyclohexylethylene (accounting for 70 percent of the total mass of the polymerized monomers), 70 g of ethyl methacrylate (accounting for 410 percent of the total mass of the polymerized monomers), 10 g of tert-butyl peroxide serving as a thermal radical initiator, 2000 g of ethyl lactate serving as a solvent, 1 g of dodecyl mercaptan serving as a chain transfer agent are added into a polymerization reactor, nitrogen is introduced for 20 minutes to remove oxygen in the system, then the temperature is raised to 80 ℃ to carry out a radical polymerization reaction, 0.2 g of tert-butyl peroxide serving as the thermal radical initiator is replenished for three times (every 30 minutes), the reaction is carried out for 400 minutes, the temperature is lowered to room temperature, and the required resin for the water-developable photoresist is obtained.
The molecular weight of the resulting product resin was characterized as 47000 and the molecular weight distribution index was 1.83.
The resin prepared in this example was used as a base material, 1.45% of a photoacid generator (iodonium salt) was added thereto, spin-coated at 4000 rpm, dried to a film thickness of 3 μm, exposed to a high-pressure mercury lamp for 35 seconds, postbaked at 120 ℃ for 4 minutes, and developed with alkali water to prepare a resist pattern.
Example 6
500 grams of the following polymerized monomers: 300 g of dimethyl maleate (accounting for 60 percent of the total mass of the polymerized monomers), 150 g of acetalized polyhydroxycyclohexylethylene (accounting for 30 percent of the total mass of the polymerized monomers), 50 g of tert-butyl methacrylate (accounting for 10 percent of the total mass of the polymerized monomers), 5 g of benzoyl peroxide serving as a thermal radical initiator, 1000 g of ethylene glycol monomethyl ether and propylene glycol monomethyl ether acetate serving as solvents, 1 g of decamercaptan serving as a chain transfer agent are added into a polymerization reactor, nitrogen is introduced for 20 minutes to remove oxygen in the system, then the temperature is raised to 130 ℃ for free radical polymerization reaction, 0.3 g of the thermal radical initiator is replenished for three times (every 30 minutes), the reaction is carried out for 180 minutes, the temperature is lowered to room temperature, and the required resin for the water-developable photoresist is obtained.
The molecular weight of the obtained product resin is 6000 through characterization, and the molecular weight distribution index is 1.52.
The resin prepared in this example was used as a base material, 1.65% of a photoacid generator (sulfonium salt) was added, spin-coated at 2000 rpm, dried to a film thickness of 3 μm, exposed to a high-pressure mercury lamp for 45 seconds, postbaked at 120 ℃ for 1 minute, and developed with alkali water to prepare a resist pattern.
Example 7
500 grams of the following polymerized monomers: 150 g of dimethyl maleate (accounting for 30 percent of the total mass of the polymerized monomers), 200 g of acetalized polyhydroxy cyclohexyl ethylene (accounting for 40 percent of the total mass of the polymerized monomers), 150 g of tert-butyl methacrylate (accounting for 30 percent of the total mass of the polymerized monomers), 30 g of benzoyl peroxide serving as a thermal radical initiator, 2300 g of methyl amyl ketone serving as a solvent and 0.2 g of decamercaptan serving as a chain transfer agent are added into a polymerization reactor, nitrogen is introduced for 20 minutes to remove oxygen in the system, then the temperature is raised to 180 ℃ to carry out radical polymerization reaction, 0.5 g of each thermal radical initiator is replenished for three times (every 30 minutes), the reaction is carried out for 2 minutes, the temperature is lowered to room temperature, and the required resin for the water-developable photoresist is obtained.
The molecular weight of the obtained product resin is 20003 and the molecular weight distribution index is 1.56.
The resin prepared in this example was used as a base material, 1.35% of a photoacid generator (sulfonium salt) was added, spin-coated at 4000 rpm, dried to a film thickness of 3 μm, exposed to a high-pressure mercury lamp for 40 seconds, postbaked at 120 ℃ for 3 minutes, and developed with alkali water to prepare a resist pattern.
Example 8
900 grams of the following polymerized monomers: 90 g of di-tert-butyl maleate (accounting for 10 percent of the total mass of the polymerized monomers), 540 g of acetalized polyhydroxy cyclohexyl ethylene (accounting for 60 percent of the total mass of the polymerized monomers), 270 g of butyl methacrylate (accounting for 30 percent of the total mass of the polymerized monomers), 10 g of azodiisobutyronitrile serving as a thermal radical initiator, 2000 g of propylene glycol monomethyl ether serving as a solvent and 2 g of dodecanethiol serving as a chain transfer agent are added into a polymerization reactor, nitrogen is introduced for 20 minutes to remove oxygen in the system, then the temperature is raised to 130 ℃ for free radical polymerization reaction, 0.7 g of each thermal radical initiator is replenished for three times (every 30 minutes), the reaction is carried out for 100 minutes, the temperature is lowered to room temperature, and the required resin for the water-developable photoresist is obtained.
The molecular weight of the obtained product resin is characterized by 32003 and the molecular weight distribution index is 1.63.
The resin prepared in this example was used as a base material, 1.75% of a photoacid generator (iodonium salt) was added, spin-coated at 3000 rpm, dried to a film thickness of 4 μm, exposed to a high-pressure mercury lamp for 30 seconds, postbaked at 120 ℃ for 3 minutes, and developed with alkali water to prepare a resist pattern.
Example 9
500 grams of the following polymerized monomers: 250 g of diester maleate (accounting for 50 percent of the total mass of the polymerized monomers), 200 g of acetalized polyhydroxy cyclohexyl ethylene (accounting for 40 percent of the total mass of the polymerized monomers), 50 g of tert-butyl methacrylate (accounting for 10 percent of the total mass of the polymerized monomers), 5 g of tert-butyl peroxide serving as a thermal radical initiator, 2200 g of solvent ethylene glycol monomethyl ether and 1 g of dodecanethiol serving as a chain transfer agent are added into a polymerization reactor, nitrogen is introduced for 20 minutes to remove oxygen in the system, then the temperature is raised to 90 ℃ to carry out radical polymerization, 0.2 g of each thermal radical initiator is replenished for three times (every 30 minutes), the reaction is carried out for 120 minutes, the temperature is lowered to room temperature, and the resin for the water-developable photoresist is obtained.
The molecular weight of the obtained product resin is 9300 and the molecular weight distribution index is 1.46.
A resist pattern was prepared by adding 1.85% of a photoacid generator (sulfonium salt) to the resin prepared in this example as a base material, spin-coating at 2000 rpm, drying to a film thickness of 4 μm, exposing to a high-pressure mercury lamp for 50 seconds, postbaking at 120 ℃ for 2 minutes, and developing with an alkali solution.
And the invention replaces 'acetalized polyhydroxycyclohexyl ethylene' in examples 1-9 with other ethylene without acetalized polyhydroxycyclohexyl functional group, the resin prepared by the invention adopts the same procedure as the photoresist prepared in examples 1-9, and the developing speed comparison is carried out by using the same developing solution (2.38% tetramethyl ammonium hydroxide aqueous solution), and the developing speed of the resin prepared in examples 1-9 of the invention can be improved by about 20%; in addition, when the developing solution adopted by the resin prepared in examples 1-9 of the present invention reduces the concentration of the aqueous solution of tetramethylammonium hydroxide to 2% during developing, the resin still has good developing speed, which indicates that the photoresist resin prepared in the present invention has better developing performance.
In addition, because the acetalized polyhydroxy cyclohexyl ethylene structure contains a cyclic group, the carbon-hydrogen ratio is increased, so that the etching resistance of the photoresist resin prepared by the invention is improved by about 5 percent compared with the resin without acetalized polyhydroxy cyclohexyl functional groups, which indicates that the photoresist resin prepared by the invention contains the cyclic group in the structure, and the etching resistance of the prepared photoresist is favorably improved.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention, and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (9)
1. A resin for a water developable photoresist, characterized by having the following structural formula:
wherein R is1、R2、R3The general structural formula is as follows:
R5is H or CH3，y＝0～5；
R4Is alkyl or cycloalkyl;
r is hydrogen or alkyl or
2. The resin for water-developable resist according to claim 1, wherein y is 0 to 2.
3. The resin for water-developable resist according to claim 1, wherein the weight average molecular weight of the resin is 2000 to 50000 and the molecular weight distribution index is 1.1 to 1.8.
4. A method for preparing the resin for water-developable resist according to any one of claims 1 to 3, characterized in that the resin for water-developable resist is prepared by radical polymerization using maleic acid diester, acetalized polyhydroxycyclohexylethylene and methacrylic acid ester as polymerization monomers.
5. The method for preparing a resin for a water-developable photoresist according to claim 4, wherein the radical polymerization is carried out by dissolving a monomer in an organic solvent, and reacting the monomer with a thermal radical initiator and a chain transfer agent at a polymerization temperature of 50 to 180 ℃ for 10 to 420 min.
6. The method of claim 4, wherein the mass content of the maleic acid diester in the polymerized monomer is 10-80% of the total content, the mass content of the acetalized polyhydroxy cyclohexyl ethylene in the polymerized monomer is 20-80% of the total content, and the mass content of the methacrylate ester in the polymerized monomer is 0-30% of the total content.
7. The method of claim 5, wherein the thermal radical initiator is a peroxide initiator or/and an azo initiator, and the amount of the thermal radical initiator is 1-10% of the total mass of the polymerized monomers.
8. The method of claim 5, wherein the chain transfer agent is a thiol chain transfer agent, and the amount of the chain transfer agent is 0 to 5% by mass of the total mass of the polymerizable monomers.
9. The method of claim 5, wherein the organic solvent is one or more selected from the group consisting of ethylene glycol methyl ether, propylene glycol methyl ether, ethylene glycol methyl ether acetate, propylene glycol methyl ether acetate, ethyl lactate, butyl acetate, and methyl amyl ketone.
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| CN202111197679.4A CN113956398A (en) | 2021-10-14 | 2021-10-14 | Resin for water-developable photoresist and preparation method thereof |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004317659A (en) * | 2003-04-14 | 2004-11-11 | Fuji Photo Film Co Ltd | Dry film photoresist |
| CN101872117A (en) * | 2009-04-23 | 2010-10-27 | 住友化学株式会社 | Produce the photoresist method of patterning |
| TW201206881A (en) * | 2010-03-24 | 2012-02-16 | Shinetsu Chemical Co | Patterning process, resist composition, and acetal compound |
| CN103076716A (en) * | 2011-10-05 | 2013-05-01 | 东京应化工业株式会社 | Resin composition, photosensitive resin composition, gasket and display device |
-
2021
- 2021-10-14 CN CN202111197679.4A patent/CN113956398A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004317659A (en) * | 2003-04-14 | 2004-11-11 | Fuji Photo Film Co Ltd | Dry film photoresist |
| CN101872117A (en) * | 2009-04-23 | 2010-10-27 | 住友化学株式会社 | Produce the photoresist method of patterning |
| TW201206881A (en) * | 2010-03-24 | 2012-02-16 | Shinetsu Chemical Co | Patterning process, resist composition, and acetal compound |
| CN103076716A (en) * | 2011-10-05 | 2013-05-01 | 东京应化工业株式会社 | Resin composition, photosensitive resin composition, gasket and display device |
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