CN113953525B - Preparation method of nanowire silver film for packaging and interconnecting large-size power semiconductor integrated circuit - Google Patents
Preparation method of nanowire silver film for packaging and interconnecting large-size power semiconductor integrated circuit Download PDFInfo
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- CN113953525B CN113953525B CN202111207769.7A CN202111207769A CN113953525B CN 113953525 B CN113953525 B CN 113953525B CN 202111207769 A CN202111207769 A CN 202111207769A CN 113953525 B CN113953525 B CN 113953525B
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 title claims abstract description 169
- 229910052709 silver Inorganic materials 0.000 title claims abstract description 83
- 239000004332 silver Substances 0.000 title claims abstract description 83
- 239000002070 nanowire Substances 0.000 title claims abstract description 64
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 18
- 238000002360 preparation method Methods 0.000 title claims abstract description 17
- 239000004065 semiconductor Substances 0.000 title claims abstract description 15
- 239000002042 Silver nanowire Substances 0.000 claims abstract description 63
- 239000010413 mother solution Substances 0.000 claims abstract description 33
- 238000000034 method Methods 0.000 claims abstract description 20
- 238000001035 drying Methods 0.000 claims abstract description 13
- 238000003825 pressing Methods 0.000 claims abstract description 13
- 238000000967 suction filtration Methods 0.000 claims abstract description 9
- 238000007865 diluting Methods 0.000 claims abstract description 6
- 239000012535 impurity Substances 0.000 claims abstract description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical group CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 25
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 17
- 239000007788 liquid Substances 0.000 claims description 15
- -1 polyethylene Polymers 0.000 claims description 12
- 239000002985 plastic film Substances 0.000 claims description 7
- 229920006255 plastic film Polymers 0.000 claims description 7
- 239000008367 deionised water Substances 0.000 claims description 6
- 229910021641 deionized water Inorganic materials 0.000 claims description 6
- 239000003085 diluting agent Substances 0.000 claims description 6
- 238000003756 stirring Methods 0.000 claims description 6
- 238000000746 purification Methods 0.000 claims description 5
- 239000004793 Polystyrene Substances 0.000 claims description 4
- 229920002223 polystyrene Polymers 0.000 claims description 4
- 239000004743 Polypropylene Substances 0.000 claims description 3
- 238000009835 boiling Methods 0.000 claims description 3
- 238000010790 dilution Methods 0.000 claims description 3
- 239000012895 dilution Substances 0.000 claims description 3
- 239000012452 mother liquor Substances 0.000 claims description 3
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 3
- 229920001155 polypropylene Polymers 0.000 claims description 3
- 239000004698 Polyethylene Substances 0.000 claims description 2
- 239000003960 organic solvent Substances 0.000 claims description 2
- 229920000573 polyethylene Polymers 0.000 claims description 2
- 229920000915 polyvinyl chloride Polymers 0.000 claims description 2
- 239000004800 polyvinyl chloride Substances 0.000 claims description 2
- 230000001476 alcoholic effect Effects 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000009766 low-temperature sintering Methods 0.000 abstract 1
- 239000012528 membrane Substances 0.000 description 13
- 239000010410 layer Substances 0.000 description 8
- 239000005416 organic matter Substances 0.000 description 8
- 238000005245 sintering Methods 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 239000002245 particle Substances 0.000 description 5
- 239000011148 porous material Substances 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 239000012982 microporous membrane Substances 0.000 description 4
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 4
- 239000004810 polytetrafluoroethylene Substances 0.000 description 4
- 239000011247 coating layer Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 238000011085 pressure filtration Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
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- 239000011248 coating agent Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
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- 239000003814 drug Substances 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000004100 electronic packaging Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/16—Making metallic powder or suspensions thereof using chemical processes
- B22F9/18—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds
- B22F9/24—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
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- Nanotechnology (AREA)
- Materials Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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- Chemical Kinetics & Catalysis (AREA)
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- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
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Abstract
The invention discloses a preparation method of a nanowire silver film for packaging and interconnecting a large-size power semiconductor integrated circuit, which comprises the steps of diluting and purifying a silver nanowire mother solution, and obtaining the nanowire silver film after filter pressing or suction filtration and drying. The preparation method provided by the invention has the advantages of simple process, low cost and controllable film thickness. The nano-wire silver film prepared by the invention has the characteristics of easy film formation, few impurities such as organic matters, higher structural strength, low-temperature sintering realization, convenient and efficient use, high reliability, high thermal conductivity, high electrical conductivity, low porosity and the like.
Description
Technical Field
The invention relates to the technical field of electronic packaging, in particular to a preparation method of a nanowire silver film for packaging and interconnecting a large-size power semiconductor integrated circuit.
Background
At present, chip substrates of high-power semiconductor integrated circuits are interconnected by adopting nano silver films. The nano silver film in the market is mostly prepared by adopting nano silver particles, the film forming property of the particle raw material is poor, and organic matters such as film forming agents, dispersing agents and the like are usually required to be added, and the film is prepared by adopting processes such as a tape casting method, a coating method and the like. Although the silver film has a nano silver particle content of up to 99%, the organic content is still high, about 1%. The silver film prepared from the nano silver particles has the defects of process adaptability, usability and the like in the packaging and interconnection process, firstly, the silver film transfer process is complex, and special equipment is needed to implement: the nano-particle silver film has low strength and cannot be directly transferred to the surface of a chip or a substrate, the chip is generally attached to the silver film by using custom equipment, preliminary bonding of the chip and the silver film is realized by presintering, and then the chip and the silver film are transferred to the substrate to be subjected to hot-press sintering, so that the package interconnection of the chip and the substrate is obtained. And secondly, the thermal conductivity and the connection strength of the packaging interconnection layer are low. The residual organic matters in the silver film sintering layer are difficult to remove in the packaging interconnection hot-pressing sintering process, and the nano silver particles are almost in point contact, so that more interfaces and pores are formed in the sintering layer. The microstructure characteristics of the silver film sintering layer are not favorable for improving the performances such as film heat conductivity, electric conductivity, connection strength and the like, and are difficult to meet the requirements of service performances such as high heat conduction, electric conduction, high connection strength and the like of high-power device packaging interconnection.
Disclosure of Invention
The invention provides a preparation method of a nanowire silver film for packaging and interconnecting a large-size power semiconductor integrated circuit, which is used for overcoming the defects of process adaptability, insufficient use performance and the like in the prior art.
In order to achieve the above object, the present invention provides a method for preparing a nanowire silver film for packaging and interconnecting a large-size power semiconductor integrated circuit, comprising the following steps:
s1: diluting and purifying the silver nanowire mother solution to obtain silver nanowire dispersion liquid;
s2: carrying out filter pressing or suction filtration on the silver nanowire dispersion liquid to obtain a wet nanowire silver film;
s3: and drying the wet nanowire silver film to obtain the nanowire silver film.
Compared with the prior art, the invention has the beneficial effects that:
1. compared with large-scale equipment such as a casting machine, a coating machine and the like, the preparation method of the nanowire silver film for packaging and interconnecting the large-size power semiconductor integrated circuit provided by the invention has the advantages that the nanowire silver film is only needed to be subjected to filter pressing or suction filtration, the equipment and the process are simple, the performance is stable, and the mass production can be realized.
2. According to the preparation method provided by the invention, the organic content in the nanowire silver film is lower (less than 0.3%), the carbon residue of the nanowire silver film hot-pressed sintering layer is less, the porosity is lower, the thermal conductivity is high, the electrical conductivity is better, and the connection strength is higher.
3. In the sintering process, the thermal expansion and contraction of the chip and the substrate are not matched, so that stress is easy to generate, and the existence of the stress is unfavorable for weather resistance, reliability and the like of the device. According to the preparation method provided by the invention, the silver film sintered layer has a porous structure, and the porous silver film structure can buffer stress generated during sintering, so that the reliability of the device is improved. The microstructure of the nano-wire silver film prepared by the invention can relieve thermo-mechanical stress caused by thermal mismatch between a chip and a substrate, and improve the reliability of a device in the service process.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to the structures shown in these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a scanning electron microscope image of silver nanowires of example 1;
FIG. 2 is a scanning electron microscope image of the nanowire silver film of example 1;
fig. 3 is a physical diagram of the nanowire silver film in example 1.
The achievement of the objects, functional features and advantages of the present invention will be further described with reference to the accompanying drawings, in conjunction with the embodiments.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In addition, the technical solutions of the embodiments of the present invention may be combined with each other, but it is necessary to be based on the fact that those skilled in the art can implement the technical solutions, and when the technical solutions are contradictory or cannot be implemented, the combination of the technical solutions should be considered as not existing, and not falling within the scope of protection claimed by the present invention.
The drugs/reagents used are all commercially available without specific description.
The invention provides a preparation method of a nanowire silver film for packaging and interconnecting a large-size power semiconductor integrated circuit, which comprises the following steps:
s1: diluting and purifying the silver nanowire mother solution to obtain silver nanowire dispersion liquid;
s2: carrying out filter pressing or suction filtration on the silver nanowire dispersion liquid to obtain a wet nanowire silver film;
s3: and drying the wet nanowire silver film to obtain the nanowire silver film.
Preferably, in step S1, the dilution is specifically:
and diluting the silver nanowire mother solution by 2-20 times by adopting a diluent. The dilution is to dissolve the organic matter coated on the surface of the silver nanowire into diluents such as water, ethanol and the like, so as to achieve the aim of purification.
Preferably, the diluent is ethanol, deionized water or other alcohol low boiling point organic solvents. The surface of the silver nanowire prepared by the alcohol heating method is coated with a layer of organic matter, and the organic matter can be dissolved in alcohol or water. The membrane is formed by subsequent filter pressing and then needs to be dried at low temperature, so water or low boiling point alcohol solvent is needed.
Preferably, in step S1, the purification is specifically:
and (3) placing the diluted silver nanowire mother solution in a water bath kettle at 30-60 ℃ and stirring for 0.5-2 h to obtain silver nanowire dispersion liquid. The purification principle is that the organic matter on the surface layer of the silver nanowire can be dissolved in water or alcohol, and the organic matter coating layer on the surface layer of the silver nanowire can be thinned until the organic matter does not exist by adding a sufficient amount of diluent.
The purification aim is that the organic matter coating layer on the surface of the silver nanowire can influence the electric conduction and heat conduction properties of the packaged device, and the use requirement of the high-power device can be met only by cleaning the device.
Preferably, in step S2, the pressure of the filter pressing or suction filtration is 0.5-2 MPa. The purpose of filter pressing or suction filtration is to extract silver nanowires in the mother liquor, the solid silver nanowires are left on the filter pressing membrane or the suction membrane, and other liquid substances are filtered out through the filter pressing membrane or the suction membrane, so that the purpose of solid-liquid separation is achieved. The silver nanowire has small size, the size is as low as 20nm, and when the pressure of filter pressing or suction filtration is small, mother liquor is difficult to pass through a filter pressing membrane or a suction filter membrane, so that the purpose of solid-liquid separation cannot be achieved. When the pressure is too high, the organic material of the filter press membrane or the pumping membrane can break.
Preferably, in step S3, the drying is specifically:
transferring the wet nanowire silver film onto a plastic film, and drying for 1-3 hours at the temperature of 40-80 ℃ to obtain the nanowire silver film. The reason for transferring to plastic film is that the nano silver film has small thickness, generally 30-70 μm, low strength, and needs to be placed on the carrier for convenient transportation and use.
Preferably, the plastic film is one of polyethylene, polypropylene, polyvinyl chloride, polystyrene, and polyethylene terephthalate. Different plastic materials have different surface tension and different adsorption forces on the nanowire wet film. The tension is too large, and the silver film is easy to transfer; the tension is too small, the adsorption force between the silver film and the plastic film is larger, and the water or alcohol solvent between the films is not easy to volatilize during drying.
Preferably, the thickness of the nanowire silver film is 30-70 mu m, and the content of impurities such as organic matters is less than 0.3%.
Preferably, the diameter of the silver nanowire in the silver nanowire mother solution is 20-200 nm, and the length is 5-50 mu m.
The preparation method of the nanowire silver film for packaging and interconnecting the high-power semiconductor integrated circuit adopts silver nanowires to prepare the silver film, and the silver nanowires have small diameter and low melting point effect and can be sintered at low temperature and low pressure. The melting point of the sintered body (film layer) is close to that of block silver (961 ℃), and the sintered body can be used at high temperature, and has good heat and electricity conducting performance and high shear strength.
According to the preparation method provided by the invention, the silver nanowires are used for preparing the film, the length of the silver nanowires is 5-50 mu m, the silver nanowires are alternately overlapped, the film is easier to form, the structural integrity of the silver film is good, and the thickness of the silver film is thinner, uniform and controllable.
Preferably, the silver nanowire mother solution is prepared by adopting a conventional alcohol heating method; the mass fraction of the silver nanowires in the silver nanowire mother solution is 0.5-0.6%. Example 1
The embodiment provides a preparation method of a nanowire silver film for packaging and interconnecting a large-size power semiconductor integrated circuit, which comprises the following steps:
s1: the conventional alcohol heating process is adopted to prepare silver nanowire mother solution, wherein silver nanowires in the silver nanowire mother solution are shown in figure 1, the diameter is 100-150 nm, and the length is 25-35 mu m.
Placing 0.5L of silver nanowire mother solution into a beaker, taking normal-temperature deionized water according to the ratio of 1:10 with the silver nanowire mother solution, and adding the deionized water into the beaker to dilute the silver nanowire mother solution;
the beaker is placed in a water bath at 30 ℃ and stirred for 2 hours, and the stirring speed is 500r/min, so that silver nanowire dispersion liquid is obtained.
S2: the silver nanowire dispersion was press-filtered to a wet nanowire silver film at a pressure of 0.5 MPa. The filter press membrane of this example was a hydrophilic polytetrafluoroethylene microporous membrane with a pore size of 0.45. Mu.m. The carrier of the wet nanowire silver film of this example is a polyethylene terephthalate film.
S3: and (3) drying the wet nanowire silver film in a vacuum furnace at 40 ℃ for 2 hours to obtain the nanowire silver film, wherein the nanowire silver film is formed by mutually overlapping silver nanowires in the nanowire silver film, and the nanowire silver film has good integrity as shown in figures 2 and 3.
The nanowire silver film prepared by the embodiment has the thickness of 45 mu m and the organic matter content of 0.22%.
Example 2
The embodiment provides a preparation method of a nanowire silver film for packaging and interconnecting a large-size power semiconductor integrated circuit, which comprises the following steps:
s1: the conventional alcohol heating process is adopted to prepare silver nanowire mother solution, and the diameter of silver nanowire in the silver nanowire mother solution is 50-80 nm, and the length is 20-33 mu m.
Placing 0.7L of silver nanowire mother solution into a beaker, taking normal-temperature deionized water according to the ratio of 1:16 with the silver nanowire mother solution, and adding the deionized water into the beaker to dilute the silver nanowire mother solution;
the beaker was placed in a water bath at 50℃and stirred for 0.5h at a stirring speed of 500r/min to obtain a silver nanowire dispersion.
S2: the silver nanowire dispersion was press-filtered to a wet nanowire silver film at a pressure of 0.5 MPa. The filter press membrane of this example was a hydrophilic polytetrafluoroethylene microporous membrane with a pore size of 1. Mu.m. The carrier of the wet nanowire silver film of the embodiment is a polypropylene plastic film.
S3: and (3) drying the wet nanowire silver film in a vacuum furnace at 50 ℃ for 1h to obtain the nanowire silver film, wherein the nanowire silver film has good structural integrity, and the silver nanowires in the nanowire silver film are alternately overlapped.
The silver nanowire prepared in this example had a silver film thickness of 57 μm and an organic content of 0.24%.
Example 3
The embodiment provides a preparation method of a nanowire silver film for packaging and interconnecting a large-size power semiconductor integrated circuit, which comprises the following steps:
s1: the conventional alcohol heating process is adopted to prepare silver nanowire mother solution, and the diameter of silver nanowire in the silver nanowire mother solution is 160-200 nm, and the length is 5-18 mu m.
Placing 1L of silver nanowire mother solution into a beaker, taking ethanol according to the ratio of 1:2 with the silver nanowire mother solution, and adding the ethanol into the beaker to dilute the silver nanowire mother solution;
the beaker was placed in a water bath at 60℃and stirred for 0.7h at a stirring speed of 500r/min to obtain a silver nanowire dispersion.
S2: and (3) carrying out pressure filtration on the silver nanowire dispersion liquid under the pressure of 1MPa to obtain a wet nanowire silver film. The filter press membrane of this example was a hydrophilic polytetrafluoroethylene microporous membrane with a pore size of 1. Mu.m. The carrier of the wet nanowire silver film of this example is a polystyrene film.
S3: and (3) drying the wet nanowire silver film in a vacuum furnace at 80 ℃ for 1.2 hours to obtain the nanowire silver film, wherein the nanowire silver film has good structural integrity, and the silver nanowires in the nanowire silver film are alternately overlapped.
The silver nanowire prepared in this example had a silver film thickness of 30 μm and an organic content of 0.21%.
Example 4
The embodiment provides a preparation method of a nanowire silver film for packaging and interconnecting a large-size power semiconductor integrated circuit, which comprises the following steps:
s1: the conventional alcohol heating process is adopted to prepare silver nanowire mother solution, and the diameter of silver nanowire in the silver nanowire mother solution is 20-45 nm, and the length is 35-50 mu m.
Placing 0.2L of silver nanowire mother solution into a beaker, taking ethanol according to the ratio of 1:20 with the silver nanowire mother solution, and adding the ethanol into the beaker to dilute the silver nanowire mother solution;
the beaker is placed in a water bath at 40 ℃ and stirred for 2 hours, and the stirring speed is 500r/min, so that silver nanowire dispersion liquid is obtained.
S2: and (3) carrying out pressure filtration on the silver nanowire dispersion liquid under the pressure of 2MPa to obtain a wet nanowire silver film. The filter press membrane of this example was a hydrophilic polytetrafluoroethylene microporous membrane with a pore size of 0.5. Mu.m. The carrier of the wet nanowire silver film of this example is a polystyrene film.
S3: and (3) drying the wet nanowire silver film in a vacuum furnace at 70 ℃ for 2.1 hours to obtain the nanowire silver film, wherein the nanowire silver film has good structural integrity, and the silver nanowires in the nanowire silver film are alternately overlapped.
The silver nanowire prepared in this example had a silver film thickness of 70 μm and an organic content of 0.23%.
The foregoing description is only of the preferred embodiments of the present invention and is not intended to limit the scope of the invention, and all equivalent structural changes made by the description of the present invention and the accompanying drawings or direct/indirect application in other related technical fields are included in the scope of the invention.
Claims (6)
1. The preparation method of the nanowire silver film for packaging and interconnecting the large-size power semiconductor integrated circuit is characterized by comprising the following steps of:
s1: diluting and purifying the silver nanowire mother solution to obtain silver nanowire dispersion liquid; the diameter of the silver nanowire in the silver nanowire mother solution is 20-200 nm, and the length is 5-50 mu m; the purification specifically comprises the following steps: placing the diluted silver nanowire mother solution into a water bath kettle with the temperature of 30-60 ℃ and stirring for 0.5-2 h to obtain silver nanowire dispersion liquid;
s2: carrying out filter pressing or suction filtration on the silver nanowire dispersion liquid to obtain a wet nanowire silver film; the pressure of the filter pressing or suction filtration is 0.5-2 MPa;
s3: drying the wet nanowire silver film to obtain a nanowire silver film; the thickness of the nanowire silver film is 30-70 mu m, and the content of organic impurities is less than 0.3%.
2. The method according to claim 1, wherein in step S1, the dilution is specifically:
and diluting the silver nanowire mother solution by 2-20 times by adopting a diluent.
3. The method of claim 2, wherein the diluent is ethanol, deionized water or other alcoholic low boiling point organic solvents.
4. The method according to claim 1, wherein in step S3, the drying is specifically:
transferring the wet nanowire silver film onto a plastic film, and drying for 1-3 hours at the temperature of 40-80 ℃ to obtain the nanowire silver film.
5. The method of claim 4, wherein the plastic film is one of polyethylene, polypropylene, polyvinyl chloride, polystyrene, and polyethylene terephthalate.
6. The method of claim 1, wherein the silver nanowire mother liquor is prepared by a conventional alcohol-thermal method; the mass fraction of the silver nanowires in the silver nanowire mother solution is 0.5-0.6%.
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| CN202111207769.7A CN113953525B (en) | 2021-10-18 | 2021-10-18 | Preparation method of nanowire silver film for packaging and interconnecting large-size power semiconductor integrated circuit |
| PCT/CN2022/095116 WO2023065666A1 (en) | 2021-10-18 | 2022-05-26 | Preparation method for nanowire silver film for packaging and interconnection of large-size power semiconductor integrated circuit |
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| KR20110071526A (en) * | 2009-12-21 | 2011-06-29 | (주)켐스 | Silver nanowire and method of preparing same and transparent conductors using same |
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