CN113948603B - Infrared light response design method for nano porous niobium nitride film photoelectric detector - Google Patents

Infrared light response design method for nano porous niobium nitride film photoelectric detector Download PDF

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CN113948603B
CN113948603B CN202111148323.1A CN202111148323A CN113948603B CN 113948603 B CN113948603 B CN 113948603B CN 202111148323 A CN202111148323 A CN 202111148323A CN 113948603 B CN113948603 B CN 113948603B
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赵雨辰
郑家欢
刘江凡
宋忠国
席晓莉
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Xian University of Technology
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Abstract

The invention discloses a design method for infrared light response of a nano porous niobium nitride film photoelectric detector, which comprises the following steps: using a Bruggeman equivalent model to equivalent the nano-porous NbN film to a uniform film with the same thickness to obtain an equivalent model of the nano-porous NbN film; based on an equivalent model of the nano-porous NbN film, setting a basic structure to be optimized of the nano-porous NbN film detector, and calculating the light response characteristic of the infrared band of the detector loaded with the nano-porous NbN film; and adopting a particle swarm optimization algorithm to carry out structural design on the photoelectric detector loaded with the nano-porous NbN film to obtain the photoelectric detector of the nano-porous NbN film. Based on an equivalent model of the nano porous NbN film, the original three-dimensional detector structure design problem can be directly solved by using a design method of a classical one-dimensional optical film structure, so that the design efficiency can be improved to a great extent, and meanwhile, higher calculation accuracy can be ensured.

Description

Infrared light response design method for nano porous niobium nitride film photoelectric detector
Technical Field
The invention belongs to the technical field of detectors, and relates to a design method for infrared light response of a nano porous niobium nitride film photoelectric detector.
Background
Modern infrared photoelectric detectors have been widely used in various military and civil fields such as biomedicine, security monitoring, autonomous navigation and infrared remote sensing. Historically, the advent of new and even new generation infrared detectors has been marked whenever a new type of infrared photodetecting material has been discovered and used. In recent years, with the progress of the american transition university on the weak light detection theory research based on Quantum Phase Transition (QPT), a quantum material having QPT characteristics will hopefully open a new path for photoelectric detection.
The electron technology university Tao Bamo research group adjusts the size of the nano honeycomb aperture on the nano porous niobium nitride (NbN) film by controlling the etching time of the reactive ions, so that the resistance of the nano porous NbN film at low temperature presents obvious superconducting insulation phase change characteristics, and indicates the phase change process of the superconducting film from a superconducting insulation state to a quantum metal state, thereby providing a new thought for the preparation of a photoelectric detector.
With the continuous and deep research on the physical properties of the nano-porous superconducting thin film, the application potential of the nano-porous superconducting thin film in the fields of infrared photoelectric detection and the like is gradually developed, but compared with a detector loaded with other mature infrared photoelectric detection materials, many related research works still need to be developed. The design of the infrared band light absorptivity of the novel photoelectric detector loaded with the nano porous NbN film is one of the designs. However, the nano porous NbN thin film structure itself is a three-dimensional structure with two-dimensional periodicity, and a three-dimensional light response model needs to be built during design, so that the modeling complexity is high, and the design efficiency is reduced.
Disclosure of Invention
The invention aims to provide a design method for infrared light response of a nano porous niobium nitride film photoelectric detector, which solves the problems of high modeling difficulty and low design efficiency in the prior art.
The technical scheme adopted by the invention is that the infrared light response design method of the nano porous niobium nitride film photoelectric detector comprises the following steps:
step 1, using a Bruggeman equivalent model to equivalent the nano-porous NbN film to a uniform film with the same thickness, so as to obtain an equivalent model of the nano-porous NbN film;
step 2, setting a basic structure to be optimized of the nano-porous NbN film detector based on an equivalent model of the nano-porous NbN film, and calculating the light response characteristic of the infrared band of the detector loaded with the nano-porous NbN film;
And 3, adopting a particle swarm optimization algorithm to carry out structural design on the photoelectric detector loaded with the nano-porous NbN film to obtain the photoelectric detector of the nano-porous NbN film.
The invention is also characterized in that:
The specific process of the step 1 is as follows: the equivalent dielectric constant of the nanoporous NbN film was calculated using the Bruggeman equivalent model, and the nanoporous NbN film was equivalent to a uniform film of the same thickness having the equivalent dielectric constant.
Light response characteristics include reflection, transmission, absorption.
The structure of the photodetector of the nano-porous NbN film in the step 2 comprises the following steps: the Mgo substrate is sequentially provided with a nano-porous NbN film, a silicon dioxide layer, a silicon nitride layer and a gold layer, wherein the silicon dioxide layer, the silicon nitride layer and the gold layer form an optical reflection cavity, and silicon dioxide is filled in holes of the nano-porous NbN film.
The objective function in the particle swarm optimization algorithm is as follows:
In the above formula, A 1310nm is the light absorptivity at 1310nm, d 1 is the Mgo substrate layer thickness, d 2 is the SiO 2 layer thickness, and d 3 is the Si 3N4 layer thickness.
The beneficial effects of the invention are as follows:
According to the infrared light response design method of the nano porous niobium nitride film photoelectric detector, disclosed by the invention, the original three-dimensional detector structure design problem can be directly solved by using the classical one-dimensional optical film structure design method based on the equivalent model of the nano porous NbN film, so that the design efficiency can be improved to a great extent, and meanwhile, higher calculation precision can be ensured.
Drawings
FIG. 1 is a schematic diagram of the structure of a nanoporous niobium nitride film in the design method of infrared light response of a nanoporous niobium nitride film photodetector according to the present invention;
FIG. 2 is a schematic diagram of a three-dimensional FDTD simulation model of a nanoporous NbN film in a design method of infrared light response of a nanoporous niobium nitride film photodetector of the invention;
FIG. 3 is a schematic diagram of the structure of a nano-porous NbN film detector in the design method of infrared light response of the nano-porous niobium nitride film photodetector of the invention;
FIG. 4a is a graph showing the comparison of the reflection characteristics of a nanoporous NbN film and a uniform NbN film loaded with the same thickness in the design method of infrared light response of a nanoporous niobium nitride film photodetector of the invention;
FIG. 4b is a graph showing the comparison of transmission characteristics of a nanoporous NbN film and a uniform NbN film loaded with the same thickness in the design method of infrared light response of a nanoporous niobium nitride film photodetector of the invention;
FIG. 4c is a graph showing the comparison of absorption characteristics of a nanoporous NbN film and a uniform NbN film loaded with the same thickness in the design method of infrared light response of a nanoporous niobium nitride film photodetector of the invention;
FIG. 5 is a chart of error analysis of Bruggeman equivalent models of different shape parameters in the design method of infrared light response of the nano-porous niobium nitride film photoelectric detector;
FIG. 6a is a graph showing the comparison of the reflection characteristics of a nanoporous NbN film and an equivalent uniform film model loaded with the same thickness in the design method of infrared light response of a nanoporous niobium nitride film photodetector of the invention;
FIG. 6b is a graph showing the comparison of transmission characteristics of a nanoporous NbN film and an equivalent uniform film model loaded with the same thickness in the design method of infrared light response of a nanoporous niobium nitride film photodetector of the invention;
FIG. 6c is a graph showing the comparison of absorption characteristics of a nanoporous NbN film and an equivalent uniform film model loaded with the same thickness in the design method of infrared light response of a nanoporous niobium nitride film photodetector of the invention; ;
FIG. 7 is a graph showing the comparison of the light absorptivity of the optimized detector structure in the design method of infrared light response of the nano-porous niobium nitride film photoelectric detector.
Detailed Description
The invention will be described in detail below with reference to the drawings and the detailed description.
The infrared light response design method of the nano porous niobium nitride film photoelectric detector comprises the following steps:
Step 1, calculating the equivalent dielectric constant of a nano porous NbN film by using a Bruggeman equivalent model, and equivalent the nano porous NbN film into a uniform film with the same thickness and equivalent dielectric constant;
For a two-phase composite medium, let the volume fraction and dielectric constant of the background medium be v 1 and ε 1, respectively, the volume fraction and dielectric constant of the filler particles be v 2 and ε 2, respectively, and v 1+v2 = 1 is satisfied. Through continuous attempts, the equivalent of the nanoporous NbN film by using the Bruggeman equivalent medium theory has higher precision, and the general expression of the theory is as follows:
Where ε e is the equivalent dielectric constant of the composite medium, and the parameter d reflects the shape of the filler particles, d=3 when spherical particles are filled and d=2 when long cylindrical particles are filled. In the calculation, nbN is set as a background medium, air or other materials filled in the holes are set as filling particles, and the respective volume fractions of the NbN and the filling particles are calculated by the film structure parameters. In the present invention, d=3 is taken, namely:
Finally, the nano-porous NbN film is equivalent to a uniform NbN film with the same thickness and the dielectric constant epsilon e.
As shown in FIG. 1, the nano-porous NbN film of this example has a thickness of 11.5nm, a pore diameter D of about 70nm, and a pore center-to-center distance p of about 100nm. A three-dimensional FDTD simulation model of the nano-porous NbN film is shown in FIG. 2, a simulation area is arranged in a dotted line frame, a perfect matching layer (PERFECT MATCHING LAYER, PML for short) is adopted for the upper boundary and the lower boundary, and the rest four boundaries are set as periodic boundary conditions (periodic boundary conditions, PBC for short). The thickness of the magnesium oxide (MgO) substrate is 4000nm, the light source is arranged above the substrate in the simulation area, and the light source is back-incident on the film from one side of the substrate to simulate the transmission and reflection characteristics of the back surface to the optical device and the light absorption characteristics of the film area in the wavelength range of 780-5000 nm.
Step 2, setting a basic structure to be optimized of the nano-porous NbN film detector based on an equivalent model of the nano-porous NbN film, and calculating the optical response characteristic of the detector in an infrared band loaded with the nano-porous NbN film by using a Transmission Matrix Method (TMM), wherein the optical response characteristic comprises reflection (R), transmission (T) and absorption (A);
the relation among the three is as follows:
R+T+A＝1 (3)；
In this embodiment, as shown in fig. 3, the structure of the nano-porous NbN thin film detector includes: the Mgo substrate is sequentially provided with a nano-porous NbN film, a silicon dioxide (SiO 2) layer, a silicon nitride (Si 3N4) layer and a gold (Au) layer, siO 2 is filled in the holes of the nano-porous NbN film, and an SiO 2 layer (excluding the SiO 2)、Si3N4 layer and the Au layer filled in the holes) below the film forms an optical reflection cavity, wherein the thickness of the nano-porous NbN film is 11.5nm, the diameter of the holes is 70nm, the center-to-center distance of the holes is 100nm, and the thickness of the Au reflector is 120nm.
Specifically, for a multilayer optical film structure composed of N layers of uniform media, the expression of the transmission matrix M is:
wherein D represents a transmission matrix of two medium interfaces, e.g Transmission matrices representing interfaces between air and first layer medium, P representing transmission matrices within a single medium, e.g./>, for exampleRepresenting the transmission matrix in the first medium, the resulting M is a 2x 2 matrix, and the reflection R e and transmission T e of the multilayer film for the electric field of the light wave can be expressed as:
Re＝M21/M11 (5)；
Te＝1/M11 (6)；
When the power transmission reflection coefficient (i.e. R and T described in step 2) is obtained, only the transmission reflection coefficient of the electric field needs to be modulo and squared.
And 3, adopting a particle swarm optimization algorithm to carry out structural design on the photoelectric detector loaded with the nano-porous NbN film to obtain the photoelectric detector of the nano-porous NbN film.
Step 3.1, defining an objective function, wherein in the embodiment, the objective is set to be that the light absorptivity A at 1310nm is maximum, and the optimization variables are three thicknesses d 1、d2 and d 3 of the Mgo substrate, the SiO 2 layer and the Si 3N4 layer:
step 3.2, initializing an algorithm, setting information such as maximum iteration times, maximum flight speed of particles, value range of each optimized variable and the like, and randomly giving a number to each particle in the particle speed range and the variable value range to serve as speed and position information of each particle;
And 3.3, calculating the target value of each particle after one iteration and comparing the target value with the historical optimal solution of each particle according to the target function so as to update the optimal solution of each particle after the one iteration, further comparing the optimal solution of each particle in the particle swarm, thereby determining the global optimal solution of the particle swarm, and comparing and updating the global optimal solution obtained after the last iteration. And at each iteration, updating the particle speed V [ ] and the position P [ ] through the currently known optimal solution, wherein the updating formulas are respectively shown in formulas (8) and (9):
P[dd]＝P[dd-1]+V[dd] (9)；
Wherein, V [ ] and P [ ] on the left side of the equal sign represent the updated speed and position, dd represents the current iteration number, w is the inertia factor, the value is non-negative, when w is larger, the global ability is stronger, the local optimization ability is weaker, conversely, when w is smaller, the global optimization ability is weaker, and the local optimization ability is stronger. By adjusting the size of w, the global optimizing performance and the local optimizing performance can be adjusted. C 1 and C 2 are called acceleration constants, wherein C 1 is the individual learning factor of each particle, C 2 is the social learning factor of each particle, and when C 1 and C 2 are constants, a more ideal solution can be obtained, and C 1＝C2 e [0,4] is generally taken, where C 1＝C2 =1.49 is set. rand () represents a random number over the [0,1] interval. p best represents the optimal solution of the particle itself, g best represents the global optimal value. In order to make the optimization algorithm better compatible with the exploration ability of the unknown region and the excavation ability of the known region, a variable inertia factor w is used, namely
Wherein w max and w min are the maximum value and the minimum value of the inertia weight, 0.9 and 0.4 are respectively taken, and DD is the maximum iteration number. Stopping the program until the maximum iteration times or the minimum limit met by the global optimal position are reached, and obtaining the optimal nano porous NbN film photoelectric detector.
This example first compares the light response characteristics of a nanoporous NbN film loaded with the same thickness with a homogeneous NbN film. As shown in fig. 4a-c, it can be seen that in the target wavelength range, whether the nanoporous film is loaded or the film is uniform, the overall optical response of the device shows a distinct resonance characteristic that repeatedly appears with the change of wavelength, and more importantly, it can be observed that the wavelengths corresponding to each resonance peak of the two films are almost identical, but the reflection of the numerically uniform film is stronger and the transmission of the numerically uniform film is weaker, the porous film is opposite, and the overall optical absorption of the uniform film is stronger than that of the porous film. The above phenomenon shows that although an array of holes with a period of 100nm and a diameter of 70nm is produced by etching, the above periodic hole structure does not change the optical properties of the film in the target wavelength range, and equivalent of the nanoporous film into a uniform film with a certain parameter by using the equivalent medium theory should still be possible. In fig. 5, the absolute error between the absorption rates of the nano porous film in the near-infrared wavelength range and the mid-infrared wavelength range of 780-5000nm is taken as an example to analyze the brugeman equivalent model error of different shape parameters, and the result shows that the brugeman model describing spherical particles has higher precision when d=3. FIG. 6 compares the light response characteristics of the nano porous film with the same thickness and the equivalent uniform film under the condition of normal incidence of middle infrared light in the near-infrared wavelength range and the middle infrared wavelength range of 780-5000nm, wherein the light response characteristics comprise R, T and A, and the simulation results of the light response characteristics of the porous film and the uniform film before and after the equivalent are well matched, so that the effectiveness of the Bruggeman equivalent model is proved.
The design result of the light absorptivity (A) of the detector structure after optimization is shown in FIG. 7, wherein the MgO substrate has a thickness of 2673nm, the SiO 2 layer has a thickness of 2485nm, and the Si 3N4 layer has a thickness of 305nm. Meanwhile, an FDTD method is adopted to establish an unequivocal three-dimensional simulation model to verify the result, and the design result of the method is well matched with the FDTD simulation result, so that the correctness of the method is proved. Meanwhile, due to the symmetry of the structure of the film itself, the light absorptivity obtained is almost completely uniform regardless of whether the incident electric field component is polarized in the x-direction or the y-direction.
Through the mode, the infrared light response design method of the nano porous niobium nitride film photoelectric detector is based on the equivalent model of the nano porous NbN film, can directly use the design method of the classical one-dimensional optical film structure to solve the original structure design problem of the three-dimensional detector, can improve the design efficiency to a great extent, and can ensure higher calculation precision.

Claims (1)

1. The infrared light response design method of the nano porous niobium nitride film photoelectric detector is characterized by comprising the following steps of:
step 1, using a Bruggeman equivalent model to equivalent the nano-porous NbN film to a uniform film with the same thickness, so as to obtain an equivalent model of the nano-porous NbN film;
Step 2, setting a basic structure to be optimized of a nano-porous NbN film photoelectric detector based on an equivalent model of the nano-porous NbN film, and calculating the light response characteristic of the detector infrared band loaded with the nano-porous NbN film;
Step 3, adopting a particle swarm optimization algorithm to carry out structural design on the photoelectric detector loaded with the nano-porous NbN film to obtain the photoelectric detector of the nano-porous NbN film;
The structure of the nano-porous NbN film photoelectric detector in the step 2 comprises the following steps: the device comprises an Mgo substrate, wherein a nano-porous NbN film, a silicon dioxide layer, a silicon nitride layer and a gold layer are sequentially arranged on the Mgo substrate, the silicon dioxide layer, the silicon nitride layer and the gold layer form an optical reflection cavity, and silicon dioxide is filled in holes of the nano-porous NbN film;
the objective function in the particle swarm optimization algorithm is as follows:
（7）；
In the above formula, A 1310nm is the light absorptivity at 1310nm, d 1 is the thickness of the Mgo substrate layer, d 2 is the thickness of the SiO 2 layer, and d 3 is the thickness of the Si 3N4 layer;
The specific process of the step 1 is as follows: calculating the equivalent dielectric constant of the nano-porous NbN film by using a Bruggeman equivalent model, and equivalent the nano-porous NbN film to be a uniform film with the same thickness and equivalent dielectric constant;
The light response characteristics include reflection, transmission, absorption.
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