CN113933933A - Preparation method and application of optimized curved waveguide - Google Patents

Preparation method and application of optimized curved waveguide Download PDF

Info

Publication number
CN113933933A
CN113933933A CN202111313016.4A CN202111313016A CN113933933A CN 113933933 A CN113933933 A CN 113933933A CN 202111313016 A CN202111313016 A CN 202111313016A CN 113933933 A CN113933933 A CN 113933933A
Authority
CN
China
Prior art keywords
bending
electron beam
waveguide
curved waveguide
beam exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN202111313016.4A
Other languages
Chinese (zh)
Other versions
CN113933933B (en
Inventor
张丽超
薛宁
祁志美
陈嘉民
马尉超
李王哲
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aerospace Information Research Institute of CAS
Original Assignee
Aerospace Information Research Institute of CAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aerospace Information Research Institute of CAS filed Critical Aerospace Information Research Institute of CAS
Priority to CN202111313016.4A priority Critical patent/CN113933933B/en
Publication of CN113933933A publication Critical patent/CN113933933A/en
Application granted granted Critical
Publication of CN113933933B publication Critical patent/CN113933933B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12166—Manufacturing methods

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

The present disclosure provides a method of making an optimized curved waveguide and applications thereof. The preparation method of the optimized curved waveguide comprises the following steps: obtaining a first part of a graph required by electron beam exposure by utilizing a preset nonlinear curvature bending relation so as to obtain a first bending waveguide; obtaining a second part of a pattern required by electron beam exposure by utilizing a preset linear curvature bending relation so as to obtain a second bending waveguide; taking a preset straight line as a symmetry axis, obtaining a third part of the pattern required by electron beam exposure, which is symmetrical to the first part of the pattern required by electron beam exposure, so as to obtain a third curved waveguide; the first part, the second part and the third part are combined to form a pattern required by electron beam exposure, and an optimized bent waveguide is formed through an electron beam exposure process; in the optimized curved waveguide, one end of the second curved waveguide is connected with the tail end of the first curved waveguide, and one end of the third curved waveguide is connected with the other end of the second curved waveguide.

Description

Preparation method and application of optimized curved waveguide
Technical Field
The disclosure relates to the field of photonic integrated circuits, and in particular to a preparation method and application of an optimized curved waveguide.
Background
Photonic Integrated Circuits (PICs) for optical interconnects have received attention in the areas of optical computing, communications, and the like. Silicon photonics has been widely used in photonic integrated circuit platforms and shows a variety of large scale photonic integrated circuits. In these PICs, silicon waveguides are used for signal transmission, and there are many bends and intersections of the waveguides to form circuits. Typical losses for a normal 90 ° waveguide bend of a single mode silicon waveguide are about 0.01dB for a bend radius of a few microns. Although this value is already low, if there are hundreds of bends, the total bending loss will become several dB. Thus, future large-scale PICs will require further reduction in bending losses, if possible.
BRIEF SUMMARY OF THE PRESENT DISCLOSURE
In view of the above, in order to at least partially solve the above problems, the present disclosure provides a method for manufacturing an optimized curved waveguide and applications thereof.
In order to achieve the above object, one aspect of the present disclosure provides a method of manufacturing an optimized curved waveguide, including:
obtaining a first part of a graph required by electron beam exposure by utilizing a preset nonlinear curvature bending relation so as to obtain a first bending waveguide;
obtaining a second part of a pattern required by electron beam exposure by utilizing a preset linear curvature bending relation so as to obtain a second bending waveguide;
taking a preset straight line as a symmetry axis, obtaining a third part of the pattern required by electron beam exposure, which is symmetrical to the first part of the pattern required by electron beam exposure, so as to obtain a third curved waveguide;
the first part, the second part and the third part are combined to form a pattern required by electron beam exposure, and an optimized bent waveguide is formed through an electron beam exposure process;
in the optimized curved waveguide, one end of the second curved waveguide is connected with the tail end of the first curved waveguide, and one end of the third curved waveguide is connected with the other end of the second curved waveguide.
Practice in accordance with the present disclosureFor example, where the predetermined non-linear curvature-curvature relationship is curvature
Figure BDA0003342755040000021
As the curve length t increases in root sign,
Figure BDA0003342755040000022
r is the curvature radius.
According to the embodiment of the present disclosure, wherein the acute included angle formed by the tangents to the two ends of the first portion of the pattern required for electron beam exposure is θ,
Figure BDA0003342755040000023
a is the bending angle corresponding to the optimized bending waveguide, and p is the proportion of the bending angle a.
According to the embodiment of the disclosure, a is 90 degrees, and p is 10-100%.
According to the embodiment of the present disclosure, obtaining the corresponding coordinates (x, y) of each point on the first portion of the pattern required for electron beam exposure in the plane coordinates x, y according to the values a, p specifically includes:
Figure BDA0003342755040000024
Figure BDA0003342755040000025
Figure BDA0003342755040000026
wherein, tmaxThe total length of the first portion of the pattern from the starting point to the ending point required for electron beam exposure; r0Is measured by the reference radius ReffIs determined by the size of ReffIs a reference radius, R0Is a constant; b is p a/2.
According to an embodiment of the present disclosure, wherein Reff＝4；R0＝2.929。
According to an embodiment of the present disclosure, the predetermined linear curvature bending relationship is a curvature of
Figure BDA0003342755040000027
Normal bending of RminThe coordinate position of the end of the third part of the pattern required by the electron beam exposure and the angle corresponding to the normal bending are determined.
According to an embodiment of the present disclosure, the angle corresponding to the normal bending is a (1-p).
According to an embodiment of the present disclosure, wherein the preset straight line is y ═ x + Reff。
Another aspect of the present disclosure provides an application of the method for manufacturing the optimized curved waveguide in manufacturing an optical device.
As can be seen from the above technical solutions, the present disclosure provides the following technical effects:
(1) the preparation method of the optimized curved waveguide provided by the embodiment of the disclosure starts with the design of the curved path, and reduces the loss problem caused by the large radiation loss of the euler curve in the past;
(2) according to the manufacturing method of the optimized bending waveguide provided by the embodiment of the disclosure, as the input/output position and the occupied area are the same as those of normal bending, the optimized bending can be used as conventional bending in PIC, so that the bending loss of future large-scale PIC is reduced;
(3) the preparation method of the 90-degree optimized curved waveguide provided by the embodiment of the disclosure reduces the transmission loss of the 90-degree curved waveguide, and when the reference radius is 4 μm, the 90-degree curved waveguide loss is 36.5% of the lowest loss in the prior art;
(4) the optimized bending provided by the embodiment of the disclosure can be directly applied to 90-degree bent waveguides, and can also be used for low-loss optimization of optical components such as micro-ring resonators and Y-branches.
Drawings
Fig. 1 schematically shows a 90 ° curved waveguide curve diagram consisting of euler curves and normal curves in the prior art;
FIG. 2 schematically illustrates a flow chart of a method of manufacturing an optimized curved waveguide according to an embodiment of the present disclosure;
FIG. 3 schematically shows a graph obtained by matlab simulation according to the curvature and the bending length in different relationships according to the embodiment of the present disclosure;
fig. 4 is a schematic diagram illustrating an optimized curved waveguide curve obtained by matlab simulation according to another embodiment of the present disclosure when the proportion of the optimized curved waveguide curve is different according to 90 °;
FIG. 5 is a schematic diagram showing a mode field transmission diagram obtained by FDTD software simulation according to another embodiment of the present disclosure, wherein the proportion of the 90 ° optimized curved waveguide curve is 100%, and the input light wavelength is 1550 nm;
fig. 6 schematically shows a side view (a), a transverse slope view (b), and a top view (c) of an SEM image of an optimized curved waveguide obtained when the 90 ° optimized curved waveguide is 50% after being processed according to the method for optimizing a curved waveguide curve according to another embodiment of the present disclosure.
[ description of reference ]
1-a first curved waveguide; 2-a second curved waveguide; 3-third curved waveguide.
Detailed Description
For the purpose of promoting a better understanding of the objects, aspects and advantages of the present disclosure, reference is made to the following detailed description taken in conjunction with the accompanying drawings.
Studies have shown that several methods are proposed to reduce bending losses. For example, with spline curves and normal bends to facilitate smooth connections between input/output ends and curved waveguides. Normal bending means that the input and output straight waveguides are connected by a curved waveguide with a constant curvature. The waveguide loss is reduced when the length of the spline curve is increased, because the connection between the input and output waveguides and the curved waveguide is smoother and the transition is smoother. The use of spline curves, however, leaves the size of the 90 bend unfixed and larger than a constant curvature curved waveguide, which is undesirable. As another example, TIR mirrors and outer grooves are proposed in theory, which both reduce bending losses by reducing field leakage to the outside of the waveguide. However, these methods require additional manufacturing processes in addition to forming the silicon waveguide.
In recent years, euler curves have been used to reduce coupling losses between straight waveguides and normally curved waveguides. Since the curvature of the euler curve increases linearly from zero, the euler curve can realize smooth connection between the straight waveguide and the normal curved waveguide, and the application of the euler curve in the bending of the silicon waveguide is proved. Research has shown that an S-bend waveguide using euler curves is used in an optical delay line; also a relatively large bend radius (20 μm) silicon waveguide L-bend consisting of a 100% euler curve was incorporated into the Si-PIC for measurement of waveguide loss. As shown in fig. 1, a new 90 ° bend waveguide curve, consisting of euler curve and normal bend, ultimately reduces the bend loss. Where a in fig. 1 is a constant, called euler parameter. The end point of the Euler curve having a minimum radius of curvature RminThe length of the curve is Lmax. The Euler curve at the input has a 1/R curvatureminIs connected to a symmetrical euler curve at the output of the 90 deg. curved waveguide curve. Thus, the start and end points of the bend are (0, 0) and (R)eff，Reff). The proportion of the euler curve can be varied from 0 to 100% by varying a. In other words, a curved waveguide consisting of a 100% euler curve is not optimal, and the euler curve used in combination with normal bending is critical to ultimately reduce the bending loss. The bending they proposed is fabricated on a Complementary Metal Oxide Semiconductor (CMOS) platform, with a bending loss of 0.002dB/90 ° for R ═ 4 μm, which is 1/10 of fixed curvature.
The loss of a curved waveguide is mainly due to three factors, namely the loss due to the distribution of the curved optical mode (and its mismatch with the straight waveguide mode at the input and output connections), the radiation loss due to the curvature (i.e. the imaginary part of the propagation constant) and the scattering loss due to the roughness of the sidewalls, both of which depend on the radius of curvature and the shape of the cross-section of the waveguide and the material of the waveguide.
Therefore, in order to intensively solve the problem of curvature radius, the preparation method for optimizing the curved waveguide starts from the design of a curved path, and the loss problem caused by large radiation loss of the curved Euler curve in the prior art is reduced; and a curved waveguide with lower loss and the same input/output position and footprint as a normal bend is called an optimized curved waveguide.
The following schematically illustrates the fabrication of an optimized curved waveguide. It should be noted that the illustrated embodiments are only specific examples of the disclosure, and should not limit the scope of the disclosure.
Fig. 2 schematically illustrates a flow chart of a fabrication method for optimizing a curved waveguide according to an embodiment of the present disclosure.
As shown in fig. 2, the preparation method includes operations S201 to S204.
In operation S201, a first portion of a pattern required for electron beam exposure is obtained using a preset non-linear curvature-bending relationship to obtain a first curved waveguide.
According to an embodiment of the present disclosure, the predetermined non-linear curvature-curvature relationship is a curvature
Figure BDA0003342755040000051
As the curve length t increases in root sign,
Figure BDA0003342755040000052
r is the curvature radius.
It should be noted that the curve length t represents the length of the curve of the first part of the pattern required for electron beam exposure; the radius of curvature R is expressed from a reference radius ReffChange to RminThe variation value of (c).
According to the embodiment of the present disclosure, the acute included angle formed by tangents to both ends of the first portion of the pattern required for electron beam exposure is θ,
Figure BDA0003342755040000053
a is the bending angle corresponding to the optimized bending waveguide, and p is the proportion of the bending angle a.
According to an embodiment of the present disclosure, for example, a may be 90 °, 10-100%, where p may be, for example, but not limited to: 10%, 20%, 30%, 40%, 50%, 60%, 70%, 80%, 90%, 100%.
According to the embodiments of the present disclosure, obtaining the coordinates (x, y) corresponding to each point on the first portion of the pattern required for electron beam exposure in the plane coordinates x, y according to the values of a and p specifically includes:
Figure BDA0003342755040000054
Figure BDA0003342755040000055
Figure BDA0003342755040000056
wherein, tmaxThe total length of the first portion of the pattern from the starting point to the ending point required for electron beam exposure; r0Is measured by the reference radius ReffThe size of (2); b is p a/2.
According to an embodiment of the present disclosure, for example, R may beeff＝4；R0＝2.929。
In operation S202, a second portion of the pattern required for the electron beam exposure is obtained using a preset linear curvature-bending relationship to obtain a second curved waveguide.
According to an embodiment of the present disclosure, the predetermined linear curvature bending relationship is a curvature of
Figure BDA0003342755040000061
Normal bending of RminThe coordinate position of the end of the third part of the pattern required by the electron beam exposure and the angle corresponding to the normal bending are determined.
According to an embodiment of the present disclosure, the angle corresponding to normal bending is a (1-p).
It should be noted that normal bending means that the radius is a constant value RminIs used for the arc of (1).
In operation S203, a third portion of the pattern required for electron beam exposure, which is symmetrical to the first portion of the pattern required for electron beam exposure, is obtained using the preset straight line as a symmetry axis to obtain a third curved waveguide.
According to an embodiment of the present disclosure, the predetermined straight line is y ═ x + Reff。
In operation S204, the first portion, the second portion, and the third portion are combined to form a pattern required for electron beam exposure, and an optimized curved waveguide is formed through an electron beam exposure process.
According to an embodiment of the present disclosure, for example, the preset non-linear curvature-curvature relationship, the preset linear curvature-curvature relationship, and the preset straight line may be y ═ x + ReffProgramming, inputting matlab software, obtaining a curved graph after running the programming, exporting a coordinate file corresponding to the graph, processing to obtain a graph required by electron beam exposure, and forming the graph into an optimized curved waveguide through an electron beam exposure process.
According to the embodiments of the present disclosure, according to the above equations (1) to (3), a curve of the proportion p of the bending angle corresponding to the optimized curved waveguide within the angle of 45 ° can be obtained. To achieve a bend of 90 ° only requires that this curve be plotted against y-x + ReffThe curves are symmetrical, and the middle parts are connected by circular arcs, so that a completely connected 90-degree bent waveguide can be obtained.
It should be noted that, in the optimized curved waveguide, one end of the second curved waveguide is connected to the end of the first curved waveguide, and one end of the third curved waveguide is connected to the other end of the second curved waveguide.
According to the embodiment of the disclosure, compared with the Euler curve that the curvature of the curve increases linearly with the increase of the curve length, the first curved waveguide and the third curved waveguide are not completely adopted in the disclosure, but are combined with the normal curved second curved waveguide, so that the loss problem caused by the fact that the radiation loss of the curve is large in the Euler curve in the past is reduced.
Fig. 3 schematically shows a graph obtained by matlab simulation according to the curvature and the bending length in different relationships according to the embodiment of the present disclosure.
As shown in fig. 3, the normal bending is indicated by a chain line, wherein the curve represented by the chain line has a fixed curvature and does not change with the change of the bending length; the optimized curvature is represented by a solid line, wherein the curve represented by the solid line has a curvature that is the square root of the length of the curve; euler bending is indicated by a dashed line, wherein the dashed line represents a curve whose curvature varies linearly with the length of the curve. The solid line is between the dotted line and the dashed line. For the three curves, coordinates (0, 0) and (4, 4) are the turning points joining the straight line (straight waveguide) and the curved portion. The curvature of the normal curve (dot-dash line) abruptly transitions from a curvature of 0 (straight-line curvature of 0) before the coordinates (0, 0) to a fixed curvature 1/4, and abruptly transitions from a curvature of 1/4 at (4, 4) to a curvature of 0 (straight-line curvature of 0) after, at which a large mode conversion loss occurs. The curvature of the euler curve (dashed line) varies linearly with the length of the curve, i.e. gradually increases from 0 at (0, 0) and then gradually decreases until the curvature at coordinates (4, 4) will be 0. This change results in reduced modal conversion losses at the splice, but the change also concentrates the task of achieving a 90 ° turn of the mode on the midpoint of the euler curve, increasing the curved radiation losses. Optimized bending (solid line) which neither allows a direct step change in curvature nor concentrates the task of 90 ° turns on the midpoint of the bend as in euler bending, resulting in large bending radiation losses, balancing the two main losses present in normal bending and euler bending respectively.
Fig. 4 schematically shows an optimized curved waveguide curve obtained by matlab simulation when the proportion of the optimized curved waveguide curve is different according to 90 °.
As shown in fig. 4, when p is 50%, a first portion of a pattern required for electron beam exposure is obtained using a preset non-linear curvature-bending relationship to obtain a first curved waveguide 1; obtaining a second part of a pattern required by electron beam exposure by utilizing a preset linear curvature bending relation to obtain a second bending waveguide 2; taking a preset straight line as a symmetry axis, obtaining a third part of the pattern required by electron beam exposure, which is symmetrical to the first part of the pattern required by electron beam exposure, so as to obtain a third curved waveguide 3; the first part, the second part and the third part are combined to form a pattern required by electron beam exposure, and an optimized bent waveguide is formed through an electron beam exposure process; wherein, in the optimized curved waveguide, one end of the second curved waveguide 2 is connected with the tail end of the first curved waveguide 1, and one end of the third curved waveguide 3 is connected with the other end of the second curved waveguide 2. When p is 0, the curve of the obviously bent waveguide is bent slowly, and the loss is reduced.
According to another embodiment of the present disclosure, when the ratio of the optimized bending angle corresponding to the bent waveguide is 10%, 20%, 30%, 40%, 50%, 60%, 70%, 80%, 90%, 100%, the wavelength of the input light is 1550nm, and the reference radius R iseffAt 4 μm and a is 90 °, the corresponding bending loss table is obtained by FDTD simulation, and as shown in table 1 below, when the proportion of the bending angle corresponding to the optimized bending waveguide reaches 50%, the obtained 90 ° bending loss value is minimum, 0.00073dB, that is, 0.00073dB/90 °.
TABLE 1
Ratio p Transmittance of light Transmission loss (dB)
0 0.99743 0.01118
0.1 0.998876 0.00488
0.2 0.999324 0.00294
0.3 0.995587 0.01921
0.4 0.99689 0.01353
0.5 0.999833 0.00073
0.6 0.999654 0.0015
0.7 0.999455 0.00237
0.8 0.999327 0.00292
0.9 0.999374 0.00272
1 0.99939 0.00265
According to another embodiment of the disclosure, a method for manufacturing a 90 ° optimized curved waveguide is provided, which reduces transmission loss of the 90 ° curved waveguide, referred to as halfDiameter ReffAt 4 μm, the 90 ° bend waveguide loss is 36.5% of the lowest loss of the current state of the art.
It should be noted that when the curvature of the curve is proportional to the square of the path length of the curve, a waveguide obtained by bending 90 ° with 100% being a square relation has a bending loss of 0.02801dB, i.e., 0.02801dB/90 °, and a transmittance of 0.993571, which are obtained by simulation. Compared with the method, when the proportion of the bending angle corresponding to the optimized bending waveguide is 100%, the 90-degree bending loss is large, and the transmittance is relatively low.
According to the embodiment of the present disclosure, the optimized curved waveguide obtained by the above method for manufacturing an optimized curved waveguide is processed, for example, the processing steps may be as follows:
(1) the SOI wafer is diced into squares with the area of 20mm 19mm, and concentrated sulfuric acid is added: the volume ratio of hydrogen peroxide to water is 3: 1 for 20min at 150 ℃ (the SOI wafer can be top silicon 210nm, the silicon dioxide of the middle layer can be 2 μm, and the silicon substrate of the bottom layer can be 725 μm), and is washed by deionized water to remove organic matters and metal particles on the surface of the wafer;
(2) placing hydrofluoric acid: 1 part of water: washing the solution in the solution for 30s by using deionized water, and cleaning a natural oxide layer;
(3) adding ammonia water: hydrogen peroxide: water was 0.2: 1: 6, carrying out water bath at 86 ℃ for 10min to remove organic matters and particles;
(4) adding hydrochloric acid: hydrogen peroxide: 1 part of water: 1: 5, carrying out water bath at 86 ℃ for 10min to remove metals;
(5) washing with deionized water, and drying with nitrogen;
(6) performing Reactive Ion Etching (RIE) on the top silicon layer, and etching to the interface between the top silicon layer and the silicon dioxide layer to a depth of 210 nm;
(7) placing in acetone solution for 20min, and removing the electron beam glue mask;
(8) cleaning in ethanol solution and deionized water, and blowing with nitrogen;
(9) cutting and grinding and polishing the end face of the sample wafer;
(10) the transmission loss of a silicon optical waveguide connected by a plurality of 90 ° bends was tested.
According to the embodiment of the present disclosure, after the optimized curved waveguide obtained by the above preparation method of the optimized curved waveguide is processed, when the proportion of the 90 ° optimized curved waveguide curve is 50%, as shown in fig. 6, the side view (a), the transverse slope view (b), and the top view (c) of the SEM image of the optimized curved waveguide are obtained.
According to embodiments of the present disclosure, since the input/output locations and footprints are the same as normal bends, the optimized bends can be used as regular bends in a PIC, reducing bending losses for future large-scale PICs.
The disclosure also provides an application of the preparation method of the optimized curved waveguide in the aspect of preparing an optical component.
According to the embodiment of the disclosure, the optimized bending can be directly applied to 90-degree bent waveguides, and can also be used for low-loss optimization of optical components such as micro-ring resonators and Y-branches.
The above-mentioned embodiments are intended to illustrate the objects, aspects and advantages of the present disclosure in further detail, and it should be understood that the above-mentioned embodiments are only illustrative of the present disclosure and are not intended to limit the present disclosure, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present disclosure should be included in the scope of the present disclosure.

Claims (10)

1. A method of fabricating an optimized curved waveguide, comprising:
obtaining a first part of a graph required by electron beam exposure by utilizing a preset nonlinear curvature bending relation so as to obtain a first bending waveguide;
obtaining a second part of a pattern required by electron beam exposure by utilizing a preset linear curvature bending relation so as to obtain a second bending waveguide;
taking a preset straight line as a symmetry axis, obtaining a third part of the pattern required by electron beam exposure, which is symmetrical to the first part of the pattern required by electron beam exposure, so as to obtain a third curved waveguide;
the first part, the second part and the third part are combined to form a pattern required by the electron beam exposure, and the optimized curved waveguide is formed through an electron beam exposure process;
in the optimized curved waveguide, one end of the second curved waveguide is connected with the tail end of the first curved waveguide, and one end of the third curved waveguide is connected with the other end of the second curved waveguide.
2. The method for preparing as claimed in claim 1, wherein the predetermined non-linear curvature-curvature relationship is curvature
Figure FDA0003342755030000011
As the curve length t increases in root sign,
Figure FDA0003342755030000012
r is the curvature radius.
3. The production method according to claim 2, wherein an acute angle formed by tangents to both ends of the first portion of the pattern required for the electron beam exposure is θ,
Figure FDA0003342755030000013
a is the bending angle corresponding to the optimized bending waveguide, and p is the proportion of the bending angle a.
4. The production method according to claim 3, wherein a is 90 ° and p is 10 to 100%.
5. The method according to claim 3, wherein obtaining coordinates (x, y) corresponding to each point on the first portion of the pattern required for electron beam exposure in plane coordinates x, y according to the values of a and p comprises:
Figure FDA0003342755030000014
Figure FDA0003342755030000015
Figure FDA0003342755030000016
wherein, tmaxThe total length of the first portion of the pattern from the starting point to the ending point required for electron beam exposure; r0Is represented by the formulaeffIs determined by the size of ReffIs a reference radius, R0Is a constant; b is p a/2.
6. The method of claim 5, wherein Reff＝4；R0＝2.929。
7. The production method according to claim 3, wherein the predetermined linear curvature-curvature relationship is a curvature of
Figure FDA0003342755030000021
Normal bending of RminThe coordinate position of the end of the third part of the pattern required by the electron beam exposure and the angle corresponding to the normal bending are determined.
8. The production method according to claim 7, wherein the angle corresponding to the normal bending is a (1-p).
9. The production method according to claim 5, wherein the predetermined straight line is y ═ x + Reff。
10. Use of the method of any one of claims 1 to 9 in the manufacture of an optical component.
CN202111313016.4A 2021-11-08 2021-11-08 Preparation method and application of optimized curved waveguide Active CN113933933B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202111313016.4A CN113933933B (en) 2021-11-08 2021-11-08 Preparation method and application of optimized curved waveguide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202111313016.4A CN113933933B (en) 2021-11-08 2021-11-08 Preparation method and application of optimized curved waveguide

Publications (2)

Publication Number Publication Date
CN113933933A true CN113933933A (en) 2022-01-14
CN113933933B CN113933933B (en) 2023-05-09

Family

ID=79286126

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202111313016.4A Active CN113933933B (en) 2021-11-08 2021-11-08 Preparation method and application of optimized curved waveguide

Country Status (1)

Country Link
CN (1) CN113933933B (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030095771A1 (en) * 2001-11-13 2003-05-22 Heu-Gon Kim Planar lightwave circuit with polynominal-curve waveguide
CN111796360A (en) * 2019-04-01 2020-10-20 朗美通经营有限责任公司 Curved waveguide structure
CN113253450A (en) * 2021-05-18 2021-08-13 浙江大学 Low-loss integrated curved optical waveguide and design method thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030095771A1 (en) * 2001-11-13 2003-05-22 Heu-Gon Kim Planar lightwave circuit with polynominal-curve waveguide
CN111796360A (en) * 2019-04-01 2020-10-20 朗美通经营有限责任公司 Curved waveguide structure
CN113253450A (en) * 2021-05-18 2021-08-13 浙江大学 Low-loss integrated curved optical waveguide and design method thereof

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
高峰 等: "弯曲波导研究进展及其应用", 中国光学 *

Also Published As

Publication number Publication date
CN113933933B (en) 2023-05-09

Similar Documents

Publication Publication Date Title
US8126301B2 (en) Optical waveguide and method for producing the same
KR100333900B1 (en) Mode shape converter, its manufacturing method and integrated optical device comprising it
JP6475626B2 (en) Curved optical waveguide
CN108983352B (en) End face coupler and preparation method thereof
CN109407229B (en) End face coupler
US20120002912A1 (en) Fabrication tolerant polarization converter
JP2005208638A (en) Low-loss silicon waveguide and method of fabricating the same
CN112987183B (en) Interlayer coupler
CN111679364B (en) Suspended edge coupler applied to intermediate infrared band
Song et al. Low-loss waveguide bends by advanced shape for photonic integrated circuits
WO2022095421A1 (en) Ultra-wideband spot-size converter based on on-chip integrated luneburg lens
CN114114540B (en) Design method of efficient compact adiabatic mode converter
CN113917605A (en) Preparation method of three-dimensional wedge-shaped lithium niobate thin film waveguide
CN214750917U (en) Gradual change curved waveguide device
CN114690315A (en) Waveguide-to-optical fiber three-dimensional polymer horizontal lens coupler
CN110082857B (en) Curved micro-nano optical waveguide based on metal nanoparticle coupling structure
CN113933933B (en) Preparation method and application of optimized curved waveguide
WO2018135429A1 (en) Crossing optical waveguide structure and optical waveguide element
WO2016179869A1 (en) Tapered waveguide and silicon-based chip
CN110770616B (en) Ultra-compact plane mode size converter based on integrated aspheric semi-transparent mirror
Koos et al. Ideal bend contour trajectories for single-mode operation of low-loss overmoded waveguides
CN114114681B (en) Numerical design method of adiabatic mode coupler
CN114815053A (en) Edge coupler with SOI-based conical structure and preparation method thereof
JP2010085564A (en) Optical waveguide circuit and optical circuit device
CN113050220A (en) Gradual change curved waveguide device

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant