CN113930745A - Preparation method of high-crystallization GaN film - Google Patents

Preparation method of high-crystallization GaN film Download PDF

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CN113930745A
CN113930745A CN202111165332.1A CN202111165332A CN113930745A CN 113930745 A CN113930745 A CN 113930745A CN 202111165332 A CN202111165332 A CN 202111165332A CN 113930745 A CN113930745 A CN 113930745A
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gan
substrate
film
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gan film
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王如志
梁琦
杨孟骐
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Beijing University of Technology
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C23C16/303—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Abstract

A preparation method of a high-crystallization GaN film relates to the field of wide-band-gap semiconductors, and a high-quality GaN film is obtained by growing on a substrate by a simple, green and low-cost chemical vapor deposition method. With N2Gas is used as nitrogen source, N plasma is formed by a plasma generating device, a solid gallium source is adopted, and N is generated at the temperature of 800-2The gas flow is 10-300sccm, the radio frequency power is 50-300W, the density of N plasma is regulated and controlled, and the reaction is carried out for 0.5-10h, so that the GaN film with high crystallization quality is obtained. The method solves the problems of high cost, complex process, danger and toxic environment in the existing GaN preparation process, and provides a feasible method for preparing the light-emitting diode, the laser emitter, the ultraviolet light detector and the high electron mobility transistor.

Description

Preparation method of high-crystallization GaN film
Technical Field
The patent relates to film preparation in the field of wide-bandgap semiconductors, in particular to a simple, low-cost and green GaN film preparation process by a chemical vapor deposition method with a plasma generation device.
Background
Due to the development requirements of modern society, people are more important to develop a short ultraviolet detection technology plate vigorously in order to break the limitation that only visible light (400-. GaN is an important wide band gap semiconductor, can be applied to photoelectric devices such as light emitting diodes, laser emitters, photodetectors, high electron mobility transistors and the like, and is widely concerned by researchers in recent decades. Meanwhile, the energy band width of the GaN is 3.4eV, the band gap is wide, and the GaN has good chemical stability and reliability and is suitable for high-temperature environments and high-power devices.
The growth of GaN on a Si sheet is started at the end of the last century, and in the century, GaN is epitaxially grown by using a low-cost and large-area silicon substrate, but Si and GaN have large thermal expansion coefficients and lattice mismatch, the difference of the thermal expansion coefficients and the lattice mismatch are 56% and 17% respectively, so that GaN is difficult to obtain an epitaxial GaN film on the Si substrate, and the quality of the grown film is poor. Al (Al)2O3The material has the advantages of low price, wide application, good matching property with the crystal lattice and the thermal expansion coefficient of the GaN, and is a good GaN film epitaxial substrate material.
Nowadays, commercial application of GaN semiconductors is still a two-dimensional film structure, the GaN film is mainly prepared by metal organic chemical vapor deposition and molecular beam epitaxy, the equipment operation is complex, the equipment cost is high, and the used raw materials are toxic ammonia gas and expensive organic gallium gas, which seriously threatens the safety of laboratory and factory production and seriously restricts the wide application of GaN films. Therefore, the broad masses of scholars have been making efforts to reduce the cost, simplify the preparation process, improve the safety and protect the environment.
Recently, the subject group developed a simple, green, low cost chemical vapor deposition process for preparing high crystalline quality GaN thin films using N2As nitrogen source, non-toxic solid gallium source, and adding plasma generator to the simple chemical vapor deposition equipment to convert N into N2The high-energy N plasma is converted, the growth driving force is increased, and the crystal quality and controllability of the GaN film growth are improved. The preparation method effectively solves the problems of high cost, complex process, insecurity and environmental pollution of the GaN film, and prepares the GaN film with high crystallization quality.
Disclosure of Invention
1. Solves the technical problem
The GaN film prepared by the method solves the problems of high cost, complex process, dangerous environment and the like of the existing GaN, and provides a feasible method for preparing a light-emitting diode, a laser emitter, an ultraviolet light detector and a high electron mobility transistor.
2. Technical implementation method
(1) Placing alumina or SiC or GaN or Si substrate with AlN thin film buffer layer into a large container. The concentrations of the solutions, which are not specifically described below, are all mass percent concentrations.
(2) And (5) cleaning the substrate. First-step deoiling: firstly, ultrasonically cleaning by using toluene with the concentration of 99.5 percent for 5-30min, then washing by using deionized water for 10 times, and cleaning off the toluene on the substrate; and then, sequentially carrying out ultrasonic cleaning for 5-30min by using acetone with the concentration of 99.9% and absolute ethyl alcohol with the concentration of 99.7%, and washing 10 times by using deionized water after each ultrasonic cleaning to remove the cleaning solution. And secondly, removing impurities on the surface of the substrate: firstly, preparing a surface cleaning mixed solution, wherein ammonia water with the concentration of 25% and hydrogen peroxide with the concentration of 30% are needed, the volume ratio of the mixed solution is that ammonia water, hydrogen peroxide and deionized water is 1:2:5, then placing a substrate in the mixed solution, carrying out water bath treatment at the temperature of 60-85 ℃ for 5-20min, and then washing the cleaning mixed solution on the substrate for 10 times by using deionized water.
(3) The cleaned substrate powder is stored in a container filled with an absolute ethanol solution.
(4) Fully mixing gallium oxide and carbon powder to obtain a gallium oxide and carbon powder mixture, wherein the mass ratio of the mixed gallium oxide to the carbon powder is 1-30; or directly using GaN powder and Ga metal as raw materials.
(5) Placing the mixture of (4) above in a crucible, and using Al2O3Or SiC or GaN or Si substrate with AlN film buffer layer as substrate, placing the substrate right above the crucible and putting the substrate into the reaction chamber of the chemical vapor deposition system with the plasma generating device.
(6) And (5) closing the reaction cavity door after the step (5) is completed, and vacuumizing to ensure that the vacuum degree is less than 10 Pa.
(7) And (4) after the step (6) is finished, starting heating, wherein the heating rate is 1-40 ℃/min, and Ar gas with the gas flow of 10-300sccm is introduced in the heating stage to serve as protective gas.
(8) After the step (7) is finished, closing the protective gas, and introducing nitrogen, wherein the flow rate is 10-300 sccm; then, the radio frequency is turned on, the radio frequency power is 50-300W, the heat preservation temperature is 800-2Pa, reacting for 0.5-10 h.
(9) After the step (8) is completed, the plasma generating device is closed, the temperature is continuously raised, and the high-crystallization GaN film can be obtained after the film annealing treatment is carried out for 0.5-1.5h within the temperature range of 800-1100 ℃.
The advantages and benefits of this patent:
the method only adopts nontoxic non-metal solid powder as a gallium source, green nitrogen is a nitrogen source, the nitrogen is ionized into nitrogen plasma by a radio frequency system, and a high-quality gallium nitride film is prepared by a chemical vapor deposition system with simple operation process, low cost and safety, so that the use of toxic organic gas and expensive equipment is avoided, the preparation process is simplified, and the preparation production danger of laboratories and factories is reduced. This patent uses a chemical vapor deposition system with radio frequency to deposit N2The gas is ionized into nitrogen plasma, and the nitrogen plasma has high energy, can improve atomic rearrangement and migration capacity of the GaN and is beneficial to crystallization and formation of the GaN film; in addition, the solid powder reacts with the reducing agent to obtain a uniform Ga atmosphere, which is beneficial to improving the crystallization quality of the GaN film. Therefore, the method provides a simple, green and low-cost preparation method for preparing the high-quality GaN film.
Description of the drawings:
FIG. 1a is an XRD pattern of a GaN thin film prepared in example 1
FIG. 1b is an XRC map of the (100) plane of a GaN film prepared in example 1
FIG. 1c is an XRC map of the (101) plane of a GaN film prepared in example 1
FIG. 2 is an SEM photograph of a GaN thin film prepared in example 1
FIG. 3 is a TEM image of a GaN thin film prepared in example 1
FIG. 4a is an XRD pattern of a GaN thin film prepared in example 2
FIG. 4b is an XRC map of the (100) plane of a GaN film prepared in example 2
FIG. 4c is an XRC map of the (101) plane of the GaN film prepared in example 2
FIG. 5 is an SEM photograph of a GaN thin film prepared in example 2
FIG. 6 is a Raman spectrum of a GaN thin film prepared in example 2
FIG. 7a is an XRD pattern of a GaN thin film prepared in example 3
FIG. 7b is an XRC map of the (100) plane of a GaN film prepared in example 3
FIG. 7c is an XRC map of the (101) plane of the GaN film prepared in example 3
FIG. 8 is an SEM photograph of a GaN thin film prepared in example 3
FIG. 9 is a Raman spectrum of a GaN thin film prepared in example 3
Detailed Description
Example 1
(1) The alumina substrate was placed in a large container.
(2) And (5) cleaning the substrate. First-step deoiling: firstly, toluene with the concentration of 99.5% is adopted for ultrasonic cleaning for 15min, and then deionized water is adopted for washing for 10 times to clean the toluene on the substrate; and then, sequentially carrying out ultrasonic cleaning for 15min by using acetone with the concentration of 99.9% and absolute ethyl alcohol with the concentration of 99.7%, and washing 10 times by using deionized water after each ultrasonic cleaning to remove the cleaning solution. And secondly, removing impurities on the surface of the substrate: firstly, preparing a surface cleaning mixed solution, wherein ammonia water with the concentration of 25% and hydrogen peroxide with the concentration of 30% are needed, the volume ratio of the mixed solution is 1:2:5, then, placing a substrate in the mixed solution, carrying out water bath treatment at the temperature of 75 ℃ for 15min, and then, washing the substrate with deionized water for 10 times to remove the cleaning mixed solution on the substrate.
(3) The cleaned substrate powder is stored in a container filled with an absolute ethanol solution.
(4) And fully mixing gallium oxide and carbon powder to obtain a gallium oxide and carbon powder mixture, wherein the mass ratio of the mixed gallium oxide to the carbon powder is 10, and the total mass of the mixture is 0.5 g.
(5) Placing the mixture of (4) above in a crucible, and using Al2O3For the substrate, the substrate is placed right above the crucible and put into the reverse of the chemical vapor deposition device with radio frequencyShould be in the cavity.
(6) After the step (5) is completed, the reaction cavity door is closed, and the reaction cavity is vacuumized, and the vacuum degree is 1 multiplied by 10-1Pa。
(7) After the step (6) is completed, the temperature is raised at a rate of 20 ℃/min. In the temperature raising stage, Ar gas is introduced as protective gas, and the flow rate is 50 sccm.
(8) After the step (7) is finished, closing the protective gas, and introducing nitrogen, wherein the flow rate of the nitrogen is 100 sccm; then, the radio frequency is switched on, the radio frequency power is 100W, the heat preservation temperature is 900 ℃, the vacuum degree is 98Pa, and the reaction time is 2 h.
(9) And (5) after the step (8) is finished, closing the plasma generating device, continuously heating, and carrying out film annealing treatment at 1000 ℃ for 1h to obtain the high-crystallization GaN film.
(10) After the steps 1-9 are finished, the Al obtained by preparation is used2O3XRD test on GaN shows that the half-height width of the (100) plane is 0.286 DEG, the half-height width of the (101) plane is 0.279 DEG, and the total dislocation density is 7.66 multiplied by 10 calculated by the formula9cm-2。
(11) After the steps 1-10 are finished, preparing the obtained Al2O3When SEM observation is carried out on the GaN film, the measured thickness of the GaN film is 0.86 μm, the film is well combined with the substrate, no pore exists in the film, and the surface is relatively flat.
(12) After the steps 1-11 are finished, preparing the obtained Al2O3The TEM observation of the GaN film shows that the GaN film has high crystallization quality through the transmission electron micrograph, and the obtained GaN film has a polycrystalline structure.
Example 2
(1) The alumina substrate was placed in a large container.
(2) And (5) cleaning the substrate. First-step deoiling: firstly, toluene with the concentration of 99.5% is adopted for ultrasonic cleaning for 15min, and then deionized water is adopted for washing for 10 times to clean the toluene on the substrate; and then, sequentially carrying out ultrasonic cleaning for 15min by using acetone with the concentration of 99.9% and absolute ethyl alcohol with the concentration of 99.7%, and washing 10 times by using deionized water after each ultrasonic cleaning to remove the cleaning solution. And secondly, removing impurities on the surface of the substrate: firstly, preparing a surface cleaning mixed solution, wherein ammonia water with the concentration of 25% and hydrogen peroxide with the concentration of 30% are needed, the volume ratio of the mixed solution is 1:2:5, then, placing a substrate in the mixed solution, carrying out water bath treatment at the temperature of 75 ℃ for 15min, and then, washing the substrate with deionized water for 10 times to remove the cleaning mixed solution on the substrate.
(3) The cleaned substrate powder is stored in a container filled with an absolute ethanol solution.
(4) And fully mixing gallium oxide and carbon powder to obtain a gallium oxide and carbon powder mixture, wherein the mass ratio of the mixed gallium oxide to the carbon powder is 12, and the total mass of the mixture is 1 g.
(5) Placing the mixture of (4) above in a crucible, and using Al2O3The substrate is placed right above the crucible and is put into a reaction cavity of a chemical vapor deposition device with radio frequency.
(6) And (5) closing the reaction cavity door after the step (5) is completed, and vacuumizing to 5 Pa.
(7) After the step (6) is completed, the temperature is raised at a rate of 20 ℃/min. In the temperature raising stage, Ar gas is introduced as protective gas, and the flow rate is 50 sccm.
(8) After the step (7) is finished, closing the protective gas, and introducing nitrogen, wherein the flow rate of the nitrogen is 150 sccm; then, the radio frequency is switched on, the radio frequency power is 100W, the heat preservation temperature is 925 ℃, the vacuum degree is 120Pa, and the reaction time is 5 h.
(9) And (5) after the step (8) is finished, closing the plasma generating device, continuously heating, and carrying out film annealing treatment at 1000 ℃ for 1h to obtain the high-crystallization GaN film.
(10) After the steps 1-9 are finished, the Al obtained by preparation is used2O3XRD test of GaN shows that the half-height width of the (100) plane is 0.28 DEG, the half-height width of the (101) plane is 0.276 DEG, and the total dislocation density is 7.38 × 109cm-2。
(11) After the steps 1-10 are finished, preparing the obtained Al2O3When SEM observation is carried out on the GaN film, the measured thickness of the GaN film is 1.62 mu m, the film is well combined with the substrate, no pore exists in the film, and the surface is relatively flat.
(12) After the steps 1-11 are finished, preparing the obtained Al2O3Raman analysis of/GaN, E2(high) has a half-height width of 5.7cm-1And the half-height width is smaller, which indicates that the GaN film has good crystallization quality.
Example 3
(1) The alumina substrate was placed in a large container.
(2) And (5) cleaning the substrate. First-step deoiling: firstly, toluene with the concentration of 99.5% is adopted for ultrasonic cleaning for 15min, and then deionized water is adopted for washing for 10 times to clean the toluene on the substrate; and then, sequentially carrying out ultrasonic cleaning for 15min by using acetone with the concentration of 99.9% and absolute ethyl alcohol with the concentration of 99.7%, and washing 10 times by using deionized water after each ultrasonic cleaning to remove the cleaning solution. And secondly, removing impurities on the surface of the substrate: firstly, preparing a surface cleaning mixed solution, wherein ammonia water with the concentration of 25% and hydrogen peroxide with the concentration of 30% are needed, the volume ratio of the mixed solution is 1:2:5, then, placing a substrate in the mixed solution, carrying out water bath treatment at the temperature of 75 ℃ for 15min, and then, washing the substrate with deionized water for 10 times to remove the cleaning mixed solution on the substrate.
(3) The cleaned substrate powder is stored in a container filled with an absolute ethanol solution.
(4) And fully mixing gallium oxide and carbon powder to obtain a gallium oxide and carbon powder mixture, wherein the mass ratio of the mixed gallium oxide to the carbon powder is 15, and the total mass of the mixture is 1 g.
(5) Placing the mixture of (4) above in a crucible, and using Al2O3The substrate is placed right above the crucible and is put into a reaction cavity of a chemical vapor deposition device with radio frequency.
(6) And (5) closing the reaction cavity door after the step (5) is completed, and vacuumizing to ensure that the vacuum degree is 2 Pa.
(7) After the step (6) is completed, the temperature is raised at a rate of 20 ℃/min. In the temperature raising stage, Ar gas is introduced as protective gas, and the flow rate is 50 sccm.
(8) After the step (7) is finished, closing the protective gas, and introducing nitrogen, wherein the flow rate of the nitrogen is 150 sccm; then, the radio frequency is switched on, the radio frequency power is 100W, the heat preservation temperature is 950 ℃, the vacuum degree is 120Pa, and the reaction time is 5 h.
(9) And (5) after the step (8) is finished, closing the plasma generating device, continuously heating, and carrying out film annealing treatment at 1000 ℃ for 1h to obtain the high-crystallization GaN film.
(10) After the steps 1-9 are finished, the Al obtained by preparation is used2O3XRD test on GaN shows that the half-height width of the (100) plane is 0.279 degrees, the half-height width of the (101) plane is 0.270 degrees, and the total dislocation density is 7.26 multiplied by 10 through calculation according to the formula9cm-2。
(11) After the steps 1-10 are finished, preparing the obtained Al2O3When SEM observation is carried out on the GaN film, the measured thickness of the GaN film is 1.33 mu m, the film is well combined with the substrate, no pore exists in the film, and the surface is relatively flat.
(12) After the steps 1-11 are finished, preparing the obtained Al2O3Raman testing with/GaN, E2(high) has a half-height width of 5.5cm-1And the half-height width is smaller, which indicates that the GaN film has good crystallization quality.

Claims (3)

1. A method for preparing a high-crystalline GaN thin film is characterized by comprising the following steps:
step 1: weighing a solid gallium source and a reducing agent according to a mass ratio, mixing and putting into a crucible for later use;
step 2: the surface of the base material is cleaned and then used as a thin film growth substrate for standby;
and step 3: after putting the gallium source mixture and the substrate into a chemical vapor deposition system, closing a cavity and vacuumizing, wherein the vacuum degree is less than 10 Pa; then, starting to heat up, wherein the heating rate is 1-40 ℃/min, and Ar gas with the gas flow of 10-300sccm is introduced as protective gas in the heating stage;
and 4, step 4: the temperature raising device raises the temperature of the substrate to 800-; maintaining the vacuum degree at 10-102Pa, the flow rate of nitrogen is 10-300sccm, and the radio frequency power is 50-300W; the growth time is 0.5-10 h; in an N plasma environmentGrowing a GaN film, and regulating and controlling the thickness of the film through the growth time; after the film growth is finished, the plasma generating device is closed, the temperature is continuously raised, and the film annealing treatment is carried out within the temperature range of 800-1100 ℃ for 0.5-1.5h, thus obtaining the GaN film.
2. The method of claim 1, wherein: step 1 the gallium source comprises Ga2O3Powder, GaN powder or Ga metal, wherein a reducing agent is also required to be added into the gallium source, and the reducing agent is carbon powder or H2The mass ratio of the gas to the gallium source to the reducing agent carbon powder is 1-30, or the reducing agent H is introduced2Gas 10-40 sccm.
3. The method of claim 1, wherein: the substrate for preparing the GaN film in the step 2 comprises Al2O3SiC, GaN, Si substrate with AlN thin film, GaN thin film buffer layer, or glass substrate.
CN202111165332.1A 2021-09-30 2021-09-30 Preparation method of high-crystallization GaN film Pending CN113930745A (en)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08264899A (en) * 1995-03-24 1996-10-11 Matsushita Electric Ind Co Ltd Manufacture of gallium nitride semiconductor
KR19980043941A (en) * 1996-12-05 1998-09-05 구자홍 Method of manufacturing gallium nitride semiconductor single crystal substrate
JP2000004045A (en) * 1998-06-15 2000-01-07 Japan Energy Corp Growth method for gallium nitride compound semiconductor single crystal
CN1662448A (en) * 2002-05-17 2005-08-31 麦克里大学 Process for manufacturing a gallium rich gallium nitride film
CN103774230A (en) * 2014-01-25 2014-05-07 北京工业大学 Method for preparing gallium nitride nano wire by non-ammoniation
CN107340325A (en) * 2017-06-30 2017-11-10 北京工业大学 A kind of preparation method of the compound field-effect transistor pH sensors of gallium nitride

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08264899A (en) * 1995-03-24 1996-10-11 Matsushita Electric Ind Co Ltd Manufacture of gallium nitride semiconductor
KR19980043941A (en) * 1996-12-05 1998-09-05 구자홍 Method of manufacturing gallium nitride semiconductor single crystal substrate
JP2000004045A (en) * 1998-06-15 2000-01-07 Japan Energy Corp Growth method for gallium nitride compound semiconductor single crystal
CN1662448A (en) * 2002-05-17 2005-08-31 麦克里大学 Process for manufacturing a gallium rich gallium nitride film
CN103774230A (en) * 2014-01-25 2014-05-07 北京工业大学 Method for preparing gallium nitride nano wire by non-ammoniation
CN107340325A (en) * 2017-06-30 2017-11-10 北京工业大学 A kind of preparation method of the compound field-effect transistor pH sensors of gallium nitride

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
QI LIANG等: "A green, low-cost method to prepare GaN films by plasma enhanced chemical vapor deposition", 《THIN SOLID FILMS》, vol. 710, pages 2 *
梁琦;王如志;杨孟骐;王长昊;刘金伟;: "Al_2O_3衬底无催化剂生长GaN纳米线及其光学性能", 物理学报, no. 08 *

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