CN113922649A - Circuit, method, medium and electronic device for improving IGBT desaturation protection precision - Google Patents
Circuit, method, medium and electronic device for improving IGBT desaturation protection precision Download PDFInfo
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Abstract
The application relates to a circuit, a method, a medium and an electronic device for improving IGBT desaturation protection precision, wherein the high IGBT desaturation protection precision comprises a driving circuit module, an anti-reverse-filling circuit module, an IGBT circuit module and a power circuit module; the driving circuit module is used for outputting a first current; one end of the reverse-filling prevention circuit module is electrically connected with one end of the driving circuit module; one end of the IGBT circuit module is electrically connected with the other end of the reverse-filling prevention circuit module, and the other end of the IGBT circuit module is electrically connected with the other end of the driving circuit module; the power circuit module is arranged between the driving circuit module and the IGBT circuit module and is connected with the driving circuit module and the IGBT circuit module in parallel, and the output end of the power circuit module is electrically connected with one end of the reverse-filling prevention circuit module; by adding the power circuit, the voltage error between the saturation voltage drop at the two ends of the IGBT circuit module and the threshold voltage of the driving circuit module is within a controllable range, and the precision of the saturation voltage drop at the two ends of the IGBT circuit module is greatly improved.
Description
Technical Field
The application relates to the technical field of automobile chips, in particular to a circuit, a method, a medium and electronic equipment for improving IGBT desaturation protection precision.
Background
With the continuous development of electric vehicles, people have higher requirements on the reliability of the electric vehicles. The motor controller is a core safety part of the electric automobile, an Insulated Gate Bipolar Transistor (IGBT) module is a composite fully-controlled voltage-driven power semiconductor device which consists of a Bipolar Junction Transistor (BJT) and a Metal Oxide Semiconductor (MOS) and has the advantages of high input impedance of the MOSFET and low conduction voltage drop of the GTR (thyristor-Transistor) module is the core of the motor controller, and energy of a high-voltage battery pack is transferred to a motor through conversion of the IGBT module, so that the electric automobile is driven. In order to ensure that the IGBT core component can be protected accurately and rapidly under abnormal working conditions, higher requirements are provided for protection precision.
Because the output current of the protection pin of the driving chip is small, the precision is not high, the deviation of the desaturation threshold voltage is too large, and when the desaturation fault is triggered, the deviation of the current flowing through the IGBT is very large, so that the IGBT module cannot be accurately and effectively protected.
Disclosure of Invention
The embodiment of the application provides a circuit, a method, a medium and an electronic device for improving IGBT desaturation protection precision, and by adding a power circuit, the difference error between the saturation voltage drop at two ends of an IGBT circuit module and the threshold voltage of a driving circuit module is within a controllable range, so that the precision of the saturation voltage drop at two ends of the IGBT circuit module is greatly improved, and the IGBT circuit module can be effectively protected.
The first aspect provides a method for improving IGBT desaturation protection precision, which comprises a driving circuit module, an anti-reverse-filling circuit module, an IGBT circuit module and a power circuit module; the driving circuit module is used for outputting a first current; one end of the reverse-filling prevention circuit module is electrically connected with one end of the driving circuit module; one end of the IGBT circuit module is electrically connected with the other end of the reverse-filling prevention circuit module, and the other end of the IGBT circuit module is electrically connected with the other end of the driving circuit module; the power circuit module is arranged between the driving circuit module and the IGBT circuit module, connected with the driving circuit module and the IGBT circuit module in parallel, and the output end of the power circuit module is electrically connected with one end of the reverse-filling prevention circuit module and used for outputting a second current to the reverse-filling prevention circuit module; the reverse-flow prevention circuit module is used for preventing the high voltage input to the IGBT circuit module from flowing back to the driving circuit module.
In some embodiments, the driving circuit module includes a driving chip and a capacitor connected in parallel with a detection pin of the driving chip; the detection pin of the driving chip is connected with the power circuit module and the IGBT circuit module in parallel, and the output end of the detection pin of the driving chip is electrically connected with the reverse-filling prevention circuit module; the capacitor is connected with the power circuit module and the IGBT circuit module in parallel, and one end of the capacitor is electrically connected with the reverse-filling prevention circuit module.
In some embodiments, the reverse filling prevention circuit module includes a diode, an anode of the diode is electrically connected to the detection pin of the driving chip, one end of the capacitor, and the output end of the power circuit module, and a cathode of the diode is connected to one end of the IGBT circuit module.
In some embodiments, the driving chip further includes a control signal input pin, a power supply input pin, a signal output pin, a reset signal pin, a feedback signal pin, and a voltage input pin.
In some embodiments, the power circuit module is a constant current source circuit.
In a second aspect, a method for improving IGBT desaturation protection precision is provided, which is applied to the circuit for improving IGBT desaturation protection precision as described above, and includes the following steps:
acquiring a first current output by a detection pin of a driving chip;
acquiring a second current output by the power circuit module;
acquiring a voltage difference error between the saturation voltage drop at two ends of the IGBT circuit module and the threshold voltage of the driving circuit module according to the acquired first current and the acquired second current;
and adjusting the value of the differential pressure error according to the proportional relation of the first current and the second current.
In some embodiments, the step of obtaining a voltage difference error between a saturation voltage drop across the IGBT circuit module and a threshold voltage of the driver circuit module according to the obtained first current and the obtained second current includes the following steps:
according to the obtained first current Ic and the second current Is, obtaining an input current Ichg of the reverse-flow prevention circuit module:
ichg ═ Ic + Is formula (1);
according to the input current Ichg of the reverse-flow prevention circuit module, acquiring a differential pressure error between the saturation voltage drop at two ends of the IGBT circuit module and the threshold voltage of the driving circuit module as follows:
setting the proportional value of the first current Ic and the second current Is as follows:
is ═ r Ic formula (3);
bringing formula (3) into formula (2) to obtain:
in formula (3): r is a proportionality coefficient of the first current and the second current.
In some embodiments, the step of "adjusting the value of the differential pressure error according to a proportional relationship between the first current and the second current" includes the steps of:
when r in the proportional relation Is ═ r ═ Ic of the first current Ic and the second current Is 1, 4, 9, 49;
the values λ 1 of the corresponding differential pressure errors are obtained as 25%, 10%, 5%, 1%, respectively.
In a third aspect, a storage medium is provided, on which a computer program is stored, which, when being executed by a processor, implements the method for improving the IGBT desaturation protection accuracy as described above.
In a fourth aspect, an electronic device is provided, which includes a memory and a processor, where the memory stores a computer program running on the processor, and the processor executes the computer program to implement all or part of the method steps in the method for improving the IGBT desaturation protection accuracy as described above.
The beneficial effect that technical scheme that this application provided brought includes: by adding the power circuit module, the proportional coefficient of the first current output by the driving circuit module and the second current output by the power circuit module can be taken according to the circuit design precision requirement, so that the differential pressure error between the saturation voltage drop at the two ends of the IGBT circuit module and the threshold voltage of the driving circuit module is in a controllable range, the precision of the saturation voltage drop at the two ends of the IGBT circuit module is greatly improved, and the IGBT circuit module can be effectively protected.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic circuit diagram of a circuit for improving IGBT desaturation protection accuracy according to an embodiment of the present application;
fig. 2 is a schematic flowchart of an embodiment of a method for improving IGBT desaturation protection accuracy according to an embodiment of the present application;
description of the drawings:
100. a driving circuit module; 110. a driving chip; 200. a reverse-filling prevention circuit module; 300. an IGBT circuit module; 400. and a power circuit module.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some embodiments of the present application, but not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
Referring to fig. 1, the circuit for improving the IGBT desaturation protection precision provided by the embodiment of the present application includes a driving circuit module 100, an anti-reverse-flow circuit module 200, an IGBT circuit module 300, and a power circuit module 400; the driving circuit module 100 is configured to output a first current; one end of the reverse-filling prevention circuit module 200 is electrically connected with one end of the driving circuit module 100; one end of the IGBT circuit module 300 is electrically connected to the other end of the reverse-filling prevention circuit module 200, and the other end is electrically connected to the other end of the driving circuit module 100; the power circuit module 400 is arranged between the driving circuit module 100 and the IGBT circuit module 300, and is connected in parallel with both the driving circuit module 100 and the IGBT circuit module 300, and an output end of the power circuit module 400 is electrically connected with one end of the reverse-filling prevention circuit module 200, and is configured to output a second current to the reverse-filling prevention circuit module 200; the reverse-flow prevention circuit module 200 is used to prevent the high voltage input to the IGBT circuit module 300 from flowing back to the driving circuit module 100.
In the prior art, because the power circuit module is not added, the driving circuit module outputs a unique current Ic, the element in the driving circuit module is charged through the reverse-filling prevention circuit module and then through the IGBT circuit module, the threshold voltage of the driving circuit module is Vc (Vc is a constant), and the calculation formula is: vc + Vcesat, Vcesat is the saturation voltage drop at two ends of the IGBT circuit module, and Rf is the equivalent impedance of the anti-reverse-flow circuit module; when the saturation voltage drop at the two ends of the IGBT circuit module is increased to the threshold voltage of the driving circuit module, a saturation fault can be reported, and the IGBT circuit module is turned off slowly, so that the purpose of protecting the driving circuit module is achieved; however, since the unique current Ic output by the driving circuit module is very small and the error is generally λ ═ 50%, the error (Vc-Vcesat) is also ± 50%, so that the desaturation threshold voltage deviation is too large, and the IGBT circuit module cannot be accurately protected.
By adding the power circuit module 400, the first current Ic output by the driving circuit module 100 and the second current Is output by the power circuit module 400, the input current of the reverse-filling prevention circuit module 200 Is obtained as Ichg: ichg ═ Ic + Is formula (1);
according to the input current Ichg of the reverse-flow prevention circuit module 200, obtaining a voltage difference error between the saturation voltage drop at the two ends of the IGBT circuit module 300 and the threshold voltage of the driving circuit module 100 as follows:
setting the proportional value of the first current Ic and the second current Is as follows:
is ═ r Ic formula (3);
bringing formula (3) into formula (2) to obtain:
in formula (3): r is a proportionality coefficient of the first current and the second current.
When r in the proportional relation Is ═ r ═ Ic of the first current Ic and the second current Is 1, 4, 9, 49;
the corresponding values of the differential pressure error are obtained as λ 1 of 25%, 10%, 5%, 1%.
Therefore, by adding the power circuit module 400, the value of the ratio coefficient of the first current and the second current can be obtained according to the circuit design precision requirement, so that the voltage error (Vc-Vcesat) between the saturation voltage drop at the two ends of the IGBT circuit module 300 and the threshold voltage of the driving circuit module 100 is within a controllable range, the precision of the saturation voltage drop Vcesat at the two ends of the IGBT circuit module 300 is greatly improved, and the IGBT circuit module 300 can be effectively protected.
Optionally, the driving circuit module 100 includes a driving chip 110 and a capacitor C connected in parallel with a detection pin of the driving chip 110; the detection pin of the driving chip 110 is connected in parallel with the power circuit module 400 and the IGBT circuit module 300, and the output end of the detection pin of the driving chip 110 is electrically connected with the reverse-filling prevention circuit module 200; the capacitor C is connected in parallel with the power circuit module 400 and the IGBT circuit module 300, and one end of the capacitor C is electrically connected to the reverse-filling prevention circuit module 200.
Specifically, in this embodiment, the detection pin of the driving chip outputs the first current Ic, the first current Ic passes through the anti-reverse-flow circuit module 200 and then passes through the IGBT circuit module 300 to charge the capacitor C in the driving circuit module 100, and the threshold voltage of the capacitor C is Vc.
Optionally, the reverse-filling prevention circuit module 200 includes a diode D, an anode of the diode D is electrically connected to the detection pin of the driving chip 110, one end of the capacitor C, and the output end of the power circuit module 400, and a cathode of the diode D is connected to one end of the IGBT circuit module 300.
In some cases, the voltage at the output end of the circuit is larger than that at the input end of the circuit, so that the voltage and the current at the output end of the circuit flow backwards, circuit components are damaged or the input end of the circuit is electrified, and potential safety hazards exist; therefore, when the output current of the detection pin of the driving chip 110 is too high and overshoots and exceeds a set limit value, the diode D of the anti-reverse-flow circuit module 200 outputs current directionally to prevent the voltage reverse flow from damaging the detection pin of the driving chip 110.
Optionally, the driving chip further includes a control signal input pin, a power input pin, a signal output pin, a reset signal pin, a feedback signal pin, and a voltage input pin. The driving chip has various models, such as SI8286, M57962, etc., and mainly includes the above-mentioned multiple pin device.
Optionally, the power supply circuit is a constant current source circuit. The constant current source is an electronic circuit capable of supplying a constant current to a load, and has characteristics of a constant output current, good temperature stability, low direct current resistance and the like.
Referring to fig. 2, an embodiment of the present application further provides a method for improving IGBT desaturation protection precision, which is applied to the circuit for improving IGBT desaturation protection precision as described above, and includes the following steps:
s100, acquiring a first current output by a detection pin of a driving chip;
s200, acquiring a second current output by the power circuit module;
s300, acquiring a voltage difference error between the saturation voltage drop at two ends of the IGBT circuit module and the threshold voltage of the driving circuit module according to the acquired first current and the acquired second current; and adjusting the value of the differential pressure error according to the proportional relation of the first current and the second current.
Specifically, in this embodiment, by adding the power circuit module 400, the first current Ic output by the driving circuit module 100, and the second current Is output by the power circuit module 400; acquiring a differential pressure error between the saturation voltage drop at two ends of the IGBT circuit module 300 and the threshold voltage of the driving circuit module 100 according to the input current Ichg of the reverse-flow prevention circuit module 200; and adjusting the value of the differential pressure error according to the proportional relation of the first current and the second current. Therefore, by adding the power circuit module 400, the value of the ratio coefficient of the first current and the second current can be obtained according to the circuit design precision requirement, so that the voltage error (Vc-Vcesat) between the saturation voltage drop at the two ends of the IGBT circuit module 300 and the threshold voltage of the driving circuit module 100 is within a controllable range, the precision of the saturation voltage drop Vcesat at the two ends of the IGBT circuit module 300 is greatly improved, and the IGBT circuit module 300 can be effectively protected.
In another embodiment of the present invention, the step of "S300, obtaining a voltage difference error between a saturation voltage drop across the IGBT circuit module and a threshold voltage of the driver circuit module according to the obtained first current and the second current" includes the following steps:
according to the obtained first current Ic and the second current Is, obtaining an input current Ichg of the reverse-flow prevention circuit module:
ichg ═ Ic + Is formula (1);
according to the input current Ichg of the reverse-flow prevention circuit module, acquiring a differential pressure error between the saturation voltage drop at two ends of the IGBT circuit module and the threshold voltage of the driving circuit module as follows:
setting the proportional value of the first current Ic and the second current Is as follows:
is ═ r Ic formula (3);
bringing formula (3) into formula (2) to obtain:
in formula (3): r is a proportionality coefficient of the first current and the second current.
In another embodiment of the present invention, the step of "S300, adjusting the value of the differential pressure error according to a proportional relationship between the first current and the second current" includes the steps of:
when r in the proportional relation Is ═ r ═ Ic of the first current Ic and the second current Is 1, 4, 9, 49;
the values of the pressure difference error λ 1 are 25%, 10%, 5%, 1%, respectively
Specifically, in the embodiment of the present invention, in the prior art, since the power circuit module is not added, the driving circuit module outputs the unique current Ic, the element in the driving circuit module is charged through the reverse-flow prevention circuit module and then through the IGBT circuit module, the threshold voltage of the driving circuit module is Vc (Vc is a constant), and the calculation formula is: vc + Vcesat, Vcesat is the saturation voltage drop at two ends of the IGBT circuit module, and Rf is the equivalent impedance of the anti-reverse-flow circuit module; when the saturation voltage drop at the two ends of the IGBT circuit module is increased to the threshold voltage of the driving circuit module, a saturation fault can be reported, and the IGBT circuit module is turned off slowly, so that the purpose of protecting the driving circuit module is achieved; however, since the unique current Ic output by the driving circuit module is very small and the error is generally λ ═ 50%, the error (Vc-Vcesat) is also ± 50%, so that the desaturation threshold voltage deviation is too large, and the IGBT circuit module cannot be accurately protected. Therefore, by adding the power circuit module 400, the value of the ratio coefficient of the first current and the second current can be obtained according to the circuit design precision requirement, so that the voltage error (Vc-Vcesat) between the saturation voltage drop at the two ends of the IGBT circuit module 300 and the threshold voltage of the driving circuit module 100 is within a controllable range, the precision of the saturation voltage drop Vcesat at the two ends of the IGBT circuit module 300 is greatly improved, and the IGBT circuit module 300 can be effectively protected.
In another embodiment of the present invention, the present application further provides a storage medium, on which a computer program is stored, and the computer program, when executed by a processor, implements the online dual-power-supply power diagnosis method as described above.
Based on the same inventive concept, embodiments of the present invention also provide a computer-readable storage medium, on which a computer program is stored, which, when being executed by a processor, implements all or part of the method steps of the above-mentioned method.
The present invention can implement all or part of the processes of the above methods, and can also be implemented by using a computer program to instruct related hardware, where the computer program can be stored in a computer-readable storage medium, and when the computer program is executed by a processor, the steps of the above method embodiments can be implemented. Wherein the computer program comprises computer program code, which may be in the form of source code, object code, an executable file or some intermediate form, etc. The computer readable medium may include: any entity or device capable of carrying computer program code, recording medium, U.S. disk, removable hard disk, magnetic disk, optical disk, computer Memory, Read-Only Memory (ROM), Random Access Memory (RAM), electrical carrier wave signals, telecommunications signals, software distribution media, and the like. It should be noted that the computer readable medium may contain other components which may be suitably increased or decreased as required by legislation and patent practice in jurisdictions, for example, in some jurisdictions, in accordance with legislation and patent practice, the computer readable medium does not include electrical carrier signals and telecommunications signals.
Based on the same inventive concept, an embodiment of the present application further provides an electronic device, which includes a memory and a processor, where the memory stores a computer program running on the processor, and the processor executes the computer program to implement all or part of the method steps in the method.
The Processor may be a Central Processing Unit (CPU), other general purpose Processor, a Digital Signal Processor (DSP), an Application Specific Integrated Circuit (ASIC), an off-the-shelf Programmable Gate Array (FPGA) or other Programmable logic device, discrete Gate or transistor logic, discrete hardware components, etc. The general purpose processor may be a microprocessor or the processor may be any conventional processor or the like, the processor being the control center of the computer device and the various interfaces and lines connecting the various parts of the overall computer device.
The memory may be used to store computer programs and/or modules, and the processor may implement various functions of the computer device by executing or executing the computer programs and/or modules stored in the memory, as well as by invoking data stored in the memory. The memory may mainly include a storage program area and a storage data area, wherein the storage program area may store an operating system, an application program required by at least one function (e.g., a sound playing function, an image playing function, etc.); the storage data area may store data (e.g., audio data, video data, etc.) created according to the use of the cellular phone. In addition, the memory may include high speed random access memory, and may also include non-volatile memory, such as a hard disk, a memory, a plug-in hard disk, a Smart Media Card (SMC), a Secure Digital (SD) Card, a Flash memory Card (Flash Card), at least one magnetic disk storage device, a Flash memory device, or other volatile solid state storage device.
As will be appreciated by one skilled in the art, embodiments of the present invention may be provided as a method, system, server, or computer program product. Accordingly, the present invention may take the form of an entirely hardware embodiment, an entirely software embodiment or an embodiment combining software and hardware aspects. Furthermore, the present invention may take the form of a computer program product embodied on one or more computer-usable storage media (including, but not limited to, disk storage, optical storage, and the like) having computer-usable program code embodied therein.
The present invention has been described with reference to flowchart illustrations and/or block diagrams of methods, apparatus (systems), servers and computer program products according to embodiments of the invention. It will be understood that each flow and/or block of the flow diagrams and/or block diagrams, and combinations of flows and/or blocks in the flow diagrams and/or block diagrams, can be implemented by computer program instructions. These computer program instructions may be provided to a processor of a general purpose computer, special purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, create means for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be stored in a computer-readable memory that can direct a computer or other programmable data processing apparatus to function in a particular manner, such that the instructions stored in the computer-readable memory produce an article of manufacture including instruction means which implement the function specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be loaded onto a computer or other programmable data processing apparatus to cause a series of operational steps to be performed on the computer or other programmable apparatus to produce a computer implemented process such that the instructions which execute on the computer or other programmable apparatus provide steps for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (10)
1. The utility model provides an improve IGBT and move back saturation protection precision circuit which characterized in that includes:
the driving circuit module is used for outputting a first current;
one end of the reverse filling prevention circuit module is electrically connected with one end of the driving circuit module;
one end of the IGBT circuit module is electrically connected with the other end of the reverse-filling prevention circuit module, and the other end of the IGBT circuit module is electrically connected with the other end of the driving circuit module; and the number of the first and second groups,
the power circuit module is arranged between the driving circuit module and the IGBT circuit module, connected with the driving circuit module and the IGBT circuit module in parallel, and electrically connected with one end of the reverse-filling prevention circuit module at the output end thereof for outputting a second current to the reverse-filling prevention circuit module;
the reverse-flow prevention circuit module is used for preventing the high voltage input to the IGBT circuit module from flowing back to the driving circuit module.
2. The circuit for improving the IGBT desaturation protection precision of claim 1, wherein the driving circuit module comprises a driving chip and a capacitor connected in parallel with a detection pin of the driving chip;
the detection pin of the driving chip is connected with the power circuit module and the IGBT circuit module in parallel, and the output end of the detection pin of the driving chip is electrically connected with the reverse-filling prevention circuit module;
the capacitor is connected with the power circuit module and the IGBT circuit module in parallel, and one end of the capacitor is electrically connected with the reverse-filling prevention circuit module.
3. The circuit for improving the precision of IGBT desaturation protection according to claim 2, wherein the anti-back-flow circuit module comprises a diode, an anode of the diode is electrically connected with the detection pin of the driving chip, one end of the capacitor and the output end of the power circuit module, and a cathode of the diode is connected with one end of the IGBT circuit module.
4. The circuit for improving the precision of IGBT desaturation protection according to claim 3, wherein said driving chip further comprises a control signal input pin, a power input pin, a signal output pin, a reset signal pin, a feedback signal pin and a voltage input pin.
5. The circuit for improving the precision of IGBT desaturation protection according to claim 1, wherein said power circuit module is a constant current source circuit.
6. A method for improving IGBT desaturation protection precision is applied to a circuit for improving IGBT desaturation protection precision as claimed in any one of the preceding claims 1-5, and is characterized by comprising the following steps:
acquiring a first current output by a detection pin of a driving chip;
acquiring a second current output by the power circuit module;
acquiring a voltage difference error between the saturation voltage drop at two ends of the IGBT circuit module and the threshold voltage of the driving circuit module according to the acquired first current and the acquired second current;
and adjusting the value of the differential pressure error according to the proportional relation of the first current and the second current.
7. The method for improving the precision of IGBT desaturation protection according to claim 6, wherein the step of obtaining the voltage difference error between the saturation voltage drop at two ends of the IGBT circuit module and the threshold voltage of the driving circuit module according to the obtained first current and the obtained second current comprises the following steps:
according to the obtained first current Ic and the second current Is, obtaining an input current Ichg of the reverse-flow prevention circuit module:
ichg ═ Ic + Is formula (1);
according to the input current Ichg of the reverse-flow prevention circuit module, acquiring a differential pressure error between the saturation voltage drop at two ends of the IGBT circuit module and the threshold voltage of the driving circuit module as follows:
setting the proportional value of the first current Ic and the second current Is as follows:
is ═ r Ic formula (3);
bringing formula (3) into formula (2) to obtain:
in formula (3): r is a proportionality coefficient of the first current and the second current.
8. The method for improving the precision of the IGBT desaturation protection as claimed in claim 7, wherein said step of "adjusting the value of said voltage difference error according to the proportional relationship between said first current and said second current" comprises the steps of:
when r in the proportional relation Is ═ r ═ Ic of the first current Ic and the second current Is 1, 4, 9, 49;
the values λ 1 of the corresponding differential pressure errors are obtained as 25%, 10%, 5%, 1%, respectively.
9. A storage medium having stored thereon a computer program, wherein the computer program, when executed by a processor, implements a method of improving IGBT desaturation protection accuracy as claimed in any one of claims 6 to 8.
10. An electronic device comprising a memory and a processor, wherein the memory stores a computer program running on the processor, and the processor executes the computer program to implement all or part of the method steps in the method for improving the IGBT desaturation protection accuracy according to any one of claims 6 to 8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111129507.3A CN113922649A (en) | 2021-09-26 | 2021-09-26 | Circuit, method, medium and electronic device for improving IGBT desaturation protection precision |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111129507.3A CN113922649A (en) | 2021-09-26 | 2021-09-26 | Circuit, method, medium and electronic device for improving IGBT desaturation protection precision |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103944367A (en) * | 2013-01-22 | 2014-07-23 | 控制技术有限公司 | Desaturation detection circuit, circuit including the same and method for operating the same |
| US20170122996A1 (en) * | 2015-10-29 | 2017-05-04 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Desaturation detection circuit and desaturation circuit monitoring function |
| CN211930607U (en) * | 2020-05-08 | 2020-11-13 | 一巨自动化装备（上海）有限公司 | IGBT overcurrent fault detection circuit based on driving chip |
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2021
- 2021-09-26 CN CN202111129507.3A patent/CN113922649A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103944367A (en) * | 2013-01-22 | 2014-07-23 | 控制技术有限公司 | Desaturation detection circuit, circuit including the same and method for operating the same |
| US20170122996A1 (en) * | 2015-10-29 | 2017-05-04 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Desaturation detection circuit and desaturation circuit monitoring function |
| CN211930607U (en) * | 2020-05-08 | 2020-11-13 | 一巨自动化装备（上海）有限公司 | IGBT overcurrent fault detection circuit based on driving chip |
Non-Patent Citations (2)
| Title |
|---|
| DANIEL LEXOW等: "Concept for an IGBT Desaturation Pulse to Reduce Turn-OFF Losses", 《2018 20TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS》, 1 November 2018 (2018-11-01), pages 1 - 10 * |
| 李一文: "基于VCE 检测的阈值可调型IGBT 过流保护设计", 《自动化与仪器仪表》, no. 2, 28 April 2021 (2021-04-28), pages 169 - 171 * |
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