CN113921406A - Method for improving connection quality of mold-free column planting of CGA device - Google Patents
Method for improving connection quality of mold-free column planting of CGA device Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 115
- 238000000576 coating method Methods 0.000 claims abstract description 212
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 211
- 229910000679 solder Inorganic materials 0.000 claims abstract description 203
- 239000011248 coating agent Substances 0.000 claims abstract description 202
- 238000003466 welding Methods 0.000 claims abstract description 182
- 238000005476 soldering Methods 0.000 claims abstract description 46
- 238000005553 drilling Methods 0.000 claims abstract description 29
- 230000032683 aging Effects 0.000 claims abstract description 22
- 238000010438 heat treatment Methods 0.000 claims abstract description 17
- 238000007639 printing Methods 0.000 claims abstract description 13
- 230000008569 process Effects 0.000 claims description 69
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 61
- 229910052802 copper Inorganic materials 0.000 claims description 61
- 239000010949 copper Substances 0.000 claims description 61
- 239000000758 substrate Substances 0.000 claims description 36
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims description 31
- 229910000765 intermetallic Inorganic materials 0.000 claims description 18
- 229910007637 SnAg Inorganic materials 0.000 claims description 6
- 229910008433 SnCU Inorganic materials 0.000 claims description 6
- 229910006913 SnSb Inorganic materials 0.000 claims description 6
- 238000007598 dipping method Methods 0.000 claims description 6
- 238000009713 electroplating Methods 0.000 claims description 6
- 230000003068 static effect Effects 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- 238000002513 implantation Methods 0.000 claims description 5
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- 229910001369 Brass Inorganic materials 0.000 claims description 3
- 229910000531 Co alloy Inorganic materials 0.000 claims description 3
- 229910007116 SnPb Inorganic materials 0.000 claims description 3
- KGWWEXORQXHJJQ-UHFFFAOYSA-N [Fe].[Co].[Ni] Chemical compound [Fe].[Co].[Ni] KGWWEXORQXHJJQ-UHFFFAOYSA-N 0.000 claims description 3
- 239000010951 brass Substances 0.000 claims description 3
- 239000007943 implant Substances 0.000 claims 1
- 238000001816 cooling Methods 0.000 abstract description 5
- 238000004806 packaging method and process Methods 0.000 abstract description 5
- 238000005219 brazing Methods 0.000 abstract description 4
- 239000000945 filler Substances 0.000 abstract description 4
- 238000004377 microelectronic Methods 0.000 abstract description 3
- 150000001875 compounds Chemical class 0.000 abstract 2
- 238000004021 metal welding Methods 0.000 abstract 1
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- 235000020637 scallop Nutrition 0.000 description 3
- 238000009517 secondary packaging Methods 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
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- 238000013461 design Methods 0.000 description 2
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- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical class [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/111—Manufacture and pre-treatment of the bump connector preform
- H01L2224/1112—Applying permanent coating
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Abstract
A method for improving connection quality of die-free column planting of a CGA device relates to the technical field of microelectronic packaging, and aims to solve the problem that connection strength is limited due to the fact that interface compounds are continuously polished and residual interface connection layers are too thin and discontinuous during connection of the die-free column planting of the CGA device. After a tin-containing coating is manufactured on the surface of a welding column, low-temperature aging is carried out, and a compound layer is formed on the welding column/tin-containing coating interface; printing soldering paste on the bonding pads arranged in the array, and heating to form an array spherical crown-shaped solder ball; the welding column containing the tin coating is installed and clamped in a clamping head of a high-precision drilling machine, the welding column is rotated, the end part of the welding column is slowly pressed downwards to drill into a spherical crown-shaped brazing filler metal welding ball aligned with the welding column to a preset depth, then feeding and rotation are stopped, the clamping head of the drilling machine is opened and lifted after cooling, and column planting of a single welding column containing the tin coating is completed; and realizing the column planting of the welding columns containing the tin coating on the array arrangement welding pads one by using the same parameters, and ensuring the exposed ends of the welding columns to be coplanar. The invention is used for the column planting of the CGA device.
Description
Technical Field
The invention relates to the technical field of microelectronic packaging, in particular to a method for improving the connection quality of a mold-free column planting of a CGA device.
Background
Column Grid Array (CGA) packaging is a preferred packaging technology for high-frequency, high-power, high-I/O, large-chip devices, since the advent, the higher height of the solder columns can effectively improve the heat dissipation capability of the devices during thermal cycling, and effectively relieve the stress caused by the difference in thermal expansion coefficients between the chip carrier substrate and the printed circuit board, has extremely high thermal fatigue reliability, and is widely used in the fields of aerospace, communication, military industry, automotive electronics, and the like. However, the difficulty of array arrangement, positioning and connection of the welding columns with large length-diameter ratio and poor stability is very high, and the traditional methods of mold positioning copper columns and reflow soldering connection have the problems of high cost of precision molds, poor mold universality, easy scratching of the welding columns due to mold disassembly after welding, influence on effective transfer of heat of a heat source due to the existence of the molds in the welding process, diffusion of scaling powder gas in the welding paste, high porosity, poor wettability and the like.
2017, a column planting method for a CuCGA device is provided, the method adopts a miniature precision drilling machine to clamp a copper column and enable the copper column to be aligned with a solder ball on a substrate array bonding pad, the copper column is made to rotate at a specific rotating speed and is downwards pressed to be drilled into the solder ball by a preset depth, and the positioning and connection of the copper column are realized by means of the friction heat-force between the copper column and the solder ball during the period, so that the purpose of no die for assisting column planting is achieved. The column planting method without the assistance of the mold does not have the problem that a set of high-precision mold is customized for each array specification device, so that the cost is greatly reduced, and the method is suitable for the production of CGA devices with various specifications; the method has the advantages that the process temperature is far lower than that of reflow soldering, and the automation is easy to realize; according to the method, a positioning die does not need to be arranged between the array copper columns, so that the problems of air holes and poor wetting of welding points caused by the influence of the existence of the die on the effective transfer of heat of a heat source and the diffusion of soldering flux gas in soldering paste in the welding process are avoided; the problem that the coplanarity of the copper cylinder is damaged by welding cylinder scratching, bending and the like caused by disassembling the die after welding does not exist. However, as the research progresses, the method is found to have the following problems:
(1) during connection, scallop interface connecting layers formed by mutual diffusion of copper column/solder ball interface atoms are continuously polished off, the residual interface connecting layers after welding are too thin and discontinuous, and the further improvement of the connection strength is limited by the limitation;
(2) the connection between the copper column and the solder ball belongs to the connection of dissimilar materials, the difference of the thermal physical and mechanical properties of the copper and the solder is large, so that the large difference of the thermal physical state between the copper and the solder exists during the column planting period, the adhesion force of the solder which generates plastic deformation to the copper column is not strong, and the further improvement of the connection strength is limited;
(3) the connection between the copper column and the solder ball belongs to the connection of dissimilar materials, the difference between the thermal physical properties and the mechanical properties of the copper and the solder is large, the copper column is easy to vibrate during column planting, the solder near the interface of the solder ball is easy to soften, the elastic holding force between the copper column and the solder ball is low, and the further improvement of the connection strength is limited by the limitation.
Disclosure of Invention
The invention aims to solve the problems that the connection quality of the existing CGA device array copper column without a die auxiliary column planting is limited by the influence of continuous grinding of an interface scallop intermetallic compound and over-thin and discontinuous residual interface connection layer during connection, and the connection strength is limited by the influence of great property difference of the copper column and a solder ball, great difference of thermal and physical states during connection, and weak adhesion and cohesion.
A method for improving the connection quality of a mold-free column planting of a CGA device comprises the following steps:
step 1, preparing a tin-containing coating on the surface of a welding column:
a tin-containing coating is formed on the surface of the welding column with the standard size by adopting methods of hot dipping tin or electroplating and the like, and then necessary cleaning process is carried out to avoid substances which influence the subsequent connection and are remained on the surface of the tin-containing coating.
step 5, planting the single solder column containing the tin coating:
the method comprises the following steps of (1) clamping a tin-containing coating welding column in a chuck of a miniature precision drilling machine, controlling a substrate where a welding pad of a column to be planted moves through a program, enabling the tin-containing coating welding column to be located above the welding pad of the column to be planted and to be aligned with the center of the welding pad, driving the tin-containing coating welding column to rotate by using the chuck of the miniature precision drilling machine, enabling the end part of the tin-containing coating welding column to slowly press and drill into a spherical crown-shaped solder welding ball at a constant speed to a preset depth S, stopping the feeding motion and rotation of the tin-containing coating welding column, and keeping the tin-containing coating welding column static until the spherical crown-shaped solder welding ball is cooled to normal temperature; opening and lifting the chuck of the drilling machine to enable the welding column containing the tin coating to be left in the spherical-crown-shaped solder ball on the welding disc, and completing column planting connection of the single welding column containing the tin coating;
and (5) repeating the process of the step (5) by using the same size parameters and process parameters, realizing the column planting process of the tin-containing coating welding columns on the welding pads distributed in each array one by one, and ensuring that the exposed ends of the tin-containing coating welding columns of the array are coplanar after column planting.
Preferably, the solder columns in step 1 are any one of standard-sized red copper columns, brass columns, iron-nickel alloy columns and iron-nickel-cobalt alloy columns, and the length-diameter ratio of the solder columns is 6-20, and the diameter D of the solder columns is not less than 1/5 of the diameter D of the bonding pad and not more than 1/3 of the diameter D of the bonding pad.
Preferably, the tin-containing coating layer in step 1 may be any one of a pure tin coating layer, an SnCu-based solder coating layer, an SnAg-based solder coating layer, an SnAgCu-based solder coating layer, an SnSb-based solder coating layer, an SnBi-based solder coating layer, and an SnPb-based solder coating layer.
Preferably, the thickness of the tin-containing coating formed on the surface of the solder column in the step 1 is 5-25 micrometers.
Preferably, the low-temperature aging temperature range of the tin-containing coating welding column in the step 2 is 50-120 ℃.
Preferably, the thickness of the intermetallic compound layer formed at the welding column/tin-containing coating interface by the low-temperature aging of the tin-containing coating welding column in the step 2 is 0.5-2.5 microns.
Preferably, the bonding pads arranged in an array in step 3 are bonding pads arranged in an array on a chip carrier substrate or bonding pads arranged in an array on a printed circuit board; the method for improving the connection quality of the mould-free column planting of the CGA device is suitable for column planting on the bonding pads arranged in an array on the chip carrier substrate in primary packaging; the method is also suitable for planting columns on the pads arranged in an array on the chip carrier substrate in secondary packaging or planting columns on the pads arranged in an array on the printed circuit board.
Preferably, the solder in the solder paste of step 3 is any one of SnCu-based, SnAg-based, SnAgCu-based, and SnSb-based solders.
Preferably, the height h of the array spherical cap-shaped solder ball in the step 4 is greater than or equal to 4/5 of the diameter D of the pad.
Preferably, the heating temperature of the solder paste in the step 4 is 20-55 ℃ higher than the melting point of the brazing filler metal in the solder paste.
Preferably, the solder columns with the tin-containing coatings are installed and clamped in clamping heads of the miniature precision drilling machine instead of drill bits in the step 5, the length range of the solder columns with the tin-containing coatings exposed out of the clamping heads is 1.2-2.0 times of the height h of the solder balls, and the parameters are kept consistent in the column planting process of each array of the solder columns with the tin-containing coatings, so that the solder columns with the tin-containing coatings are ensured to have sufficient rigidity and cannot be bent.
Preferably, the rotating speed range of the welding column with the tin coating layer driven by the chuck of the miniature precision drilling machine in the step 5 is 2500-8000 revolutions per minute.
Preferably, the predetermined depth of the end of the solder column with the tin coating in the step 5 pressed and drilled into the spherical cap-shaped solder ball is S, 1/2h < S < h-0.1mm, and h is the height of the array spherical cap-shaped solder ball.
Preferably, the process of drilling the end of the welding column with the tin-containing coating into the spherical cap-shaped solder ball in the step 5 comprises the processes of generating heat by friction at the interface of the tin-containing coating/the spherical cap-shaped solder ball, generating defects such as plastic deformation and dislocation of the solder and the tin-containing coating near the interface, dynamically recrystallizing the solder and the tin-containing coating in the near-interface large-strain area to eliminate the original interface and the defects and finally forming reliable connection and the like.
The invention has the following beneficial effects:
firstly, the tin-containing coating preparation and the low-temperature aging treatment on the surface of the welding column enable a heterogeneous material transition region between the welding column and the spherical crown-shaped solder ball to form a continuous intermetallic compound layer with proper thickness, and the intermetallic compound layer cannot be polished off due to the existence of the peripheral tin coating in the subsequent column planting process, so that the problems that the scallop intermetallic compound formed by mutual diffusion of copper column/solder ball interface atoms in the connection of the column planting without a mold of the copper column of the existing CGA device array does not exist, the residual interface connecting layer after welding is too thin and discontinuous, and the connection strength is limited so as to influence the column planting quality do not exist.
Secondly, a tin-containing coating with a certain thickness exists on the surface of the welding column, a column planting connection interface is converted into a homogeneous interface between the tin-containing coating and the spherical crown-shaped solder ball from a heterogeneous interface of the welding column and the spherical crown-shaped solder ball, and mutual contact, frictional heat-generating adhesion, atomic interdiffusion and dynamic recrystallization between the tin-containing coating and the tin-based solder are generated in the column planting process to form reliable connection. The invention changes the heterogeneous interface connection with greatly different material properties into the homogeneous interface connection with similar or same material properties, and the connectivity of the heterogeneous interface structure of the welding column/spherical-crown-shaped solder ball is obviously improved and enhanced.
Thirdly, the tin-containing coating with a certain thickness exists on the surface of the welding column, the interface connection layer of the planted column is converted into the solder and the recrystallized grains of the tin-containing coating, and the problems that the interface connection layer of the existing CGA device array copper column without a mold for assisting the connection of the planted column is an intermetallic compound layer, the residual interface connection layer after welding is too thin and discontinuous, and the connection strength is limited so as to influence the quality of the planted column do not exist.
Fourthly, the tin-containing coating with a certain thickness exists on the surface of the welding column, the connection interface of the column planting is converted into a homogeneous interface between the tin-containing coating and the spherical crown-shaped solder ball from a heterogeneous interface of the welding column/the spherical crown-shaped solder ball, the difference of the thermal physical and mechanical properties of the tin-containing coating and the tin-based solder is extremely small, the difference of the thermal physical states of the tin-containing coating and the tin-based solder in the connection process is extremely small, the frictional adhesion between the tin-containing coating and the tin-based solder is extremely good, and the problems that the performance of the welded column and the spherical crown-shaped solder ball is greatly different, the difference of the thermal physical states during the column planting is greatly different, the adhesion is not strong, the connection strength is limited and the column planting quality is further influenced in the existing CGA device array copper column die-free auxiliary column planting connection are solved.
Fifthly, the tin-containing coating with a certain thickness exists on the surface of the welding column, the soft tin-containing coating plays a role of a stress buffer layer to a certain extent during column planting, the vibration degree of the welding column is obviously weakened, and the problems that the copper column is easy to vibrate during column planting, the solder near the interface of the solder ball is easy to soften, and the connection strength is limited and the quality of the column planting is further influenced due to the fact that the elastic holding force between the copper column and the solder ball is low in the prior CGA device array copper column without a mold to assist in column planting connection are solved.
Sixth, compared with the traditional methods of die positioning copper pillar and reflow soldering connection adopted in the technical field of microelectronic packaging, the method for improving the die-free post-planting connection quality of the CGA device can save expensive precision die manufacturing cost; compared with the existing CGA device array copper column die-free auxiliary column planting connection method, the column planting connection strength can be increased by 35%, and the connection quality is remarkably improved.
Drawings
FIG. 1 is a schematic diagram of a single solder post with a tin-containing coating according to one embodiment after post implantation;
FIG. 2 is a schematic diagram illustrating a single solder post with a tin-containing coating according to a second embodiment after post implantation;
FIG. 3 is a schematic longitudinal sectional view of a single interconnection structure formed after the pillar is implanted and then the other end of the tin-coated red copper pillar is reflow-soldered at a low temperature in example 1;
fig. 4 is a schematic longitudinal sectional view of a single interconnect structure formed after post implantation of a tin-coated iron-nickel alloy post and subsequent low temperature reflow of the other end of the tin-coated iron-nickel alloy post in example 2.
Detailed Description
The first embodiment is as follows:
a method for improving the connection quality of a mold-free column planting of a CGA device comprises the following steps:
step 1, preparing a tin-containing coating on the surface of a welding column:
forming a tin-containing coating on the surface of the welding column with the standard size by adopting methods such as hot dipping tin or electroplating, and the like, and then carrying out necessary cleaning process to avoid substances which influence subsequent connection and are remained on the surface of the tin-containing coating; the thickness of the tin-containing coating is required to be not less than 5 microns and not more than 25 microns; the coating containing tin is required to be uniform in thickness, bright in surface, free of rolling balls or non-wetting phenomenon;
the method is the same as the traditional BGA ball mounting process, a proper amount of soldering paste is printed on the bonding pads arranged in the array of the printed circuit board by means of a mature template printing process, and the amount of the soldering paste printed on the array arrangement bonding pads is required to be consistent;
and 4, heating the solder paste to form an array spherical crown-shaped solder ball with the consistent height:
heating the soldering paste to activate the soldering flux and remove an oxide film, melting the soldering flux and wetting the array-arranged bonding pads, and forming array spherical-cap-shaped soldering flux balls with consistent height on the array-arranged bonding pads of the printed circuit board;
step 5, planting the single solder column containing the tin coating:
the method comprises the following steps of (1) clamping a tin-containing coating welding column in a clamping head of a miniature precision drilling machine, controlling a printed circuit board where a welding pad of a column to be planted moves through a program, enabling the tin-containing coating welding column to be located above the welding pad of the column to be planted and to be aligned with the center of the welding pad, driving the tin-containing coating welding column to rotate by using the clamping head of the miniature precision drilling machine, enabling the end part of the tin-containing coating welding column to slowly press and drill into a spherical crown-shaped solder welding ball at a constant speed to a preset depth S, stopping the feeding motion and rotation of the tin-containing coating welding column, and keeping the tin-containing coating welding column static until the spherical crown-shaped solder welding ball is cooled to normal temperature; opening and lifting the chuck of the drilling machine to enable the welding columns with the tin coatings to be left in the spherical-crown-shaped solder welding balls on the welding pads, and completing the column planting connection of the single welding columns with the tin coatings on the welding pads of the printed circuit board; as the tin-containing coating welding column rotates, presses down and drills into the spherical crown-shaped solder welding ball by the preset depth process and the subsequent cooling process to the room temperature, the temperature of the homogeneous interface between the tin-containing coating/the spherical crown-shaped solder welding ball rises, the mutual contact, plastic deformation, friction heat generation adhesion, atomic mutual diffusion, dynamic recrystallization, the processes of temperature rise expansion and temperature reduction contraction of the spherical crown-shaped solder welding ball, which generate the holding effect on the tin-containing coating welding column, and the like occur in the column planting process, and finally the reliable connection is formed; the column-planting connection of the tin-containing coating welding column is a result of the comprehensive action of a plastic deformation connection mechanism, a diffusion connection mechanism, a recrystallization connection mechanism and a mechanical expansion connection mechanism;
the schematic diagram of a single solder column with a tin coating after column planting is shown in fig. 1, wherein A is a cylindrical solder column; b is a tin-containing coating on the periphery of the cylindrical welding column; c is an intermetallic compound layer generated between the welding column and the tin-containing coating; d is a spherical-crown-shaped solder ball formed after solder paste reflow soldering; e is a printed circuit board; f is a metal film welding disc on the printed circuit board; g is a solder mask.
and (5) repeating the process of the step (5) by using the same size parameters and process parameters, realizing the column planting process of the tin-containing coating welding columns on each welding pad arranged on the printed circuit board in an array one by one, and ensuring that the exposed ends of the tin-containing coating welding columns of the array are coplanar after column planting.
The invention can be used for realizing high-quality column planting of array welding columns of large-chip CGA devices with high frequency, high power and high I/O, which have high reliability requirements in the fields of aerospace, communication, war industry, automobile electronics and the like.
The second embodiment is as follows:
a method for improving the connection quality of a mold-free column planting of a CGA device comprises the following steps:
step 1, preparing a tin-containing coating on the surface of a welding column:
forming a tin-containing coating on the surface of the welding column with the standard size by adopting methods such as hot dipping tin or electroplating and the like, and then carrying out necessary cleaning process to avoid substances which influence subsequent connection and are remained on the surface of the tin-containing coating; the thickness of the tin-containing coating is required to be not less than 5 microns and not more than 25 microns; the coating containing tin is required to be uniform in thickness, bright in surface, free of rolling balls or non-wetting phenomenon;
the method is the same as the traditional solder bump ball-planting process, and a proper amount of soldering paste is printed on the pads arranged in the array of the chip carrier substrate by means of a mature template printing process, so that the amount of the soldering paste printed on the pads arranged in the array is required to be consistent;
and 4, heating the solder paste to form an array spherical crown-shaped solder ball with the consistent height:
heating the soldering paste to activate the soldering flux and remove the oxide film, melting the soldering flux and wetting the array-arranged bonding pads, and forming array spherical-cap-shaped soldering flux balls with consistent height on the array-arranged bonding pads of the chip carrier substrate;
step 5, planting the single solder column containing the tin coating:
the method comprises the following steps of (1) clamping a tin-containing coating welding column in a clamping head of a miniature precision drilling machine, controlling a chip carrier substrate where a welding pad of a column to be planted to move through a program, enabling the tin-containing coating welding column to be located above the welding pad of the column to be planted and to be aligned with the center of the welding pad, driving the tin-containing coating welding column to rotate by using the clamping head of the miniature precision drilling machine, enabling the end part of the tin-containing coating welding column to slowly press downwards at a constant speed and drill into a spherical crown-shaped solder welding ball to a preset depth S, stopping the feeding motion and rotation of the tin-containing coating welding column, and keeping the tin-containing coating welding column static until the spherical crown-shaped solder welding ball is cooled to normal temperature; opening and lifting the chuck of the drilling machine to enable the welding column with the tin coating to be left in the spherical-crown-shaped solder welding ball on the welding disc, and completing the column planting connection of the single welding column with the tin coating on the chip carrier substrate; as the tin-containing coating welding column rotates, presses down and drills into the spherical crown-shaped solder welding ball by the preset depth process and the subsequent cooling process to the room temperature, the temperature of the homogeneous interface between the tin-containing coating/the spherical crown-shaped solder welding ball rises, the mutual contact, plastic deformation, friction heat generation adhesion, atomic mutual diffusion, dynamic recrystallization, the processes of temperature rise expansion and temperature reduction contraction of the spherical crown-shaped solder welding ball, which generate the holding effect on the tin-containing coating welding column, and the like occur in the column planting process, and finally the reliable connection is formed; the column-planting connection of the tin-containing coating welding column is a result of the comprehensive action of a plastic deformation connection mechanism, a diffusion connection mechanism, a recrystallization connection mechanism and a mechanical expansion connection mechanism;
the schematic diagram of a single solder post with tin coating after post planting is shown in fig. 2, wherein A is a cylindrical solder post; b is a tin-containing coating on the periphery of the cylindrical welding column; c is an intermetallic compound layer generated between the welding column and the tin-containing coating; d is a spherical-crown-shaped solder ball formed after solder paste reflow soldering; e1 is a chip carrier substrate; f is a metal film bonding pad on the chip carrier substrate; g is a solder mask.
and (5) repeating the process of the step (5) by using the same size parameters and process parameters, realizing the column planting process of the tin-containing coating welding columns on each welding pad arranged on the chip carrier substrate in an array one by one, and ensuring that the exposed ends of the tin-containing coating welding columns of the array are coplanar after column planting.
The invention can be used for realizing high-quality column planting of array welding columns of large-chip CGA devices with high frequency, high power and high I/O, which have high reliability requirements in the fields of aerospace, communication, war industry, automobile electronics and the like.
The third concrete implementation mode:
the welded column in step 1 of the present embodiment is any one of a red copper column, a brass column, an iron-nickel alloy column, and an iron-nickel-cobalt alloy column with uniform specification and size, which are prepared according to a standard; in the step 1 of the present embodiment, the length-diameter ratio of the solder column is 6 to 20, and the diameter D of the solder column is not less than 1/5 of the diameter D of the pad and not more than 1/3 of the diameter D of the pad.
Other steps and parameters are the same as in the first or second embodiment.
The fourth concrete implementation mode:
the tin-containing coating layer in step 1 of the present embodiment is any one of a pure tin coating layer, a SnCu-based solder coating layer, a SnAg-based solder coating layer, a SnAgCu-based solder coating layer, a SnSb-based solder coating layer, a SnBi-based solder coating layer, and a SnPb-based solder coating layer.
Other steps and parameters are the same as in one of the first to third embodiments.
The fifth concrete implementation mode:
the thickness of the tin-containing coating formed on the surface of the solder post in step 1 of the present embodiment is 5 to 25 μm.
Other steps and parameters are the same as in one of the first to fourth embodiments.
The sixth specific implementation mode:
the low-temperature aging temperature range of the tin-containing coating welding column in the step 2 of the embodiment is 50-120 ℃; the thickness of the intermetallic compound layer formed at the solder column/tin-containing coating interface by the low-temperature aging of the tin-containing coating solder column in step 2 of the embodiment is 0.5 to 2.5 micrometers.
Other steps and parameters are the same as in one of the first to fifth embodiments.
The seventh embodiment:
the solder material in the solder paste described in step 3 of the present embodiment is any one of SnCu-based, SnAg-based, SnAgCu-based, and SnSb-based solder materials.
Other steps and parameters are the same as in one of the first to sixth embodiments.
The specific implementation mode is eight:
the heating temperature of the solder paste in the step 4 of the embodiment is 20-55 ℃ higher than the melting point of the brazing filler metal in the solder paste; the height h of the solder balls in the array spherical cap shape described in step 4 of this embodiment is equal to or greater than 4/5 of the pad diameter D.
Other steps and parameters are the same as in one of the first to seventh embodiments.
The specific implementation method nine:
in the step 5 of the embodiment, the tin-containing coating welding column is installed and clamped in a clamping head of a miniature precision drilling machine instead of a drill bit, the length range of the tin-containing coating welding column exposed out of the clamping head is 1.2-2.0 times of the height h of a solder ball, and the parameters are kept consistent in the column planting process of each array of tin-containing coating welding columns, so that the tin-containing coating welding columns are ensured to have enough rigidity and are not bent; the predetermined depth of the solder column with tin coating end pressed and drilled into the spherical cap solder ball in step 5 of this embodiment is S, 1/2h < S < h-0.1mm, and h is the height of the array spherical cap solder ball.
Other steps and parameters are the same as in one of the first to eighth embodiments.
The detailed implementation mode is ten:
in step 5 of the embodiment, the rotation speed range of the welding column with the tin coating layer driven by the chuck of the miniature precision drilling machine is 2500-8000 rpm.
Other steps and parameters are the same as in one of the first to ninth embodiments.
Examples
Example 1:
a single tin-containing coated solder pillar interconnect structure in a CGA device array solder pillar interconnect structure can be seen in fig. 3. Wherein, 1 is a cylindrical red copper column; 2 is a tin-containing coating at the periphery of the red copper column; 3 is an intermetallic compound layer generated between the red copper column and the tin-containing coating; 4 is a spherical crown shaped solder ball at the end of the planting column; 5, a brazing filler metal fillet formed after the other end of the tin-coating red copper column is subjected to low-temperature reflow soldering after the column is planted; aiming at the column planting condition of the array welding columns in the secondary packaging, 6 is a chip carrier substrate, 7 is a printed circuit board, 8 is a metal film welding pad on the chip carrier substrate/the printed circuit board, and 9 is a solder mask on the chip carrier substrate/the printed circuit board.
Taking the column implanting condition of the array welding columns in the secondary packaging as an example for illustration, the process of the array welding column interconnection structure of the CGA device mainly comprises the column implanting process of the array welding columns on the array arrangement bonding pad of the printed circuit board in the early stage and the reflow soldering process of the other end of the implanted array welding columns, the array arrangement bonding pad on the chip carrier substrate and the soldering paste on the array arrangement bonding pad in the later stage.
Aiming at the early column planting process, the method for improving the connection quality of the mould-free column planting of the CGA device comprises the following steps:
step one, manufacturing a tin-containing coating on the surface of a welding column:
according to the design standard, cylindrical red copper columns with uniform specification and size are prepared, wherein the diameter of each red copper column is matched with the diameter D of a pad of the printed circuit board, the diameter of each red copper column is D (D/5 is not less than D and not more than D/3), the height of each red copper column is l, and the length-diameter ratio of each red copper column is 9; after ultrasonic cleaning is carried out in alcohol solution, a tin-containing coating is formed on the surface of the red copper pillar with the standard size by adopting methods such as hot dipping tin or electroplating, and then ultrasonic cleaning is carried out to avoid substances which influence the subsequent connection and are remained on the surface of the tin-containing coating; the thickness of the prepared tin-containing coating is not less than 5 micrometers and not more than 25 micrometers, and the tin-containing coating is required to be uniform in thickness, bright in surface, free of balls or non-wetting phenomenon;
step two, carrying out low-temperature aging treatment on the red copper column with the tin-containing coating, and controlling the aging temperature and the aging time so as to form a continuous intermetallic compound layer with proper thickness and shape on the interface of the welding column/the tin-containing coating;
printing a proper amount of soldering paste on the pads arranged in the array of the printed circuit board; the method is the same as the traditional BGA ball planting process, equivalent and enough Sn3.0Ag0.5Cu lead-free solder paste is printed on pads arranged in an array on a printed circuit board by means of a mature template printing process, and the printing amount of the solder paste is required to enable the height h of a solder ball after reflow soldering to be not less than 4/5 times of the diameter D of the pad;
step four, heating the soldering paste to form an array spherical crown-shaped solder ball with consistent height:
heating the solder paste according to a reflow soldering heating curve of the Sn3.0Ag0.5Cu lead-free solder paste, wherein the reflow soldering peak temperature is controlled to be 35 +/-5 ℃ above the melting point of the solder, activating the solder in the solder paste, removing an oxidation film, melting the solder in the solder paste, wetting the pads arranged in an array, and forming an array spherical-cap-shaped solder ball with consistent height on the pads arranged in the array of the printed circuit board;
step five, planting the single welding column containing the tin coating:
the tin-coating red copper columns are installed and clamped in clamping heads of a miniature precision drilling machine, the length of the tin-coating red copper columns, which is exposed out of the clamping heads, is 1.5 times of the height h of the solder balls, and the parameters of each tin-coating red copper column are kept consistent in the column planting process. Controlling the movement of the printed circuit board where the pad of the column to be planted is positioned by a program to enable the red copper column containing the tin coating to be positioned above the pad of the column to be planted and to be aligned with the center of the pad, and utilizing a miniature precision drilling machineThe clamping head drives the red copper column with the tin coating to rotate at the rotating speed of 5000 r/min, and the end part of the red copper column is slowly pressed downwards at a constant speed to drill into the spherical crown-shaped solder ball at a preset depth
Then stopping the feeding motion and the rotation of the tin-containing coating red copper column, and keeping the tin-containing coating red copper column static until the spherical crown-shaped solder ball is cooled to normal temperature; opening and lifting the drill chuck to enable the red copper columns with the tin coatings to be left in the spherical-crown-shaped solder balls on the bonding pads, and completing the column planting connection of the single red copper columns with the tin coatings on the single bonding pads of the printed circuit board; as the process of rotating, pressing down and drilling the tin-containing coating red copper column into the spherical crown-shaped solder welding ball by the preset depth and the subsequent cooling process to room temperature are carried out, the temperature of a homogeneous interface between the tin-containing coating and the spherical crown-shaped solder welding ball is increased, the processes of mutual contact, plastic deformation, friction heat generation adhesion, atomic mutual diffusion, dynamic recrystallization, temperature rise expansion and temperature reduction shrinkage of the spherical crown-shaped solder welding ball between the tin-containing coating and the tin-based solder are generated in the column planting process, and the like, so as to form reliable connection finally; the column planting connection of the red copper column containing the tin coating is the result of the comprehensive action of a plastic deformation connection mechanism, a diffusion connection mechanism, a recrystallization connection mechanism and a mechanical expansion connection mechanism;
step six, array the column planting of the solder columns with the tin coatings:
and repeating the process of the fifth step according to the same size parameters and process parameters, realizing the column planting process of the tin-coating red copper columns on each bonding pad arranged on the printed circuit board in an array one by one, and ensuring that the exposed ends of the tin-coating red copper columns of the array are coplanar after the columns are planted.
Firstly, column planting is carried out on a printed circuit board, then the process of low-temperature reflow soldering (the melting point of adopted solder paste is at least 40 ℃ lower than the melting point of spherical crown-shaped solder balls at the ends of the planted columns, and the peak temperature is controlled to be 25 +/-5 ℃ higher than the melting point of low-melting point solder paste) between the other ends of the planted array tin-containing coating red copper columns and array arrangement bonding pads on a chip carrier substrate is completed, during the process, the planted column parts are also in the same low-temperature reflow soldering heating environment, mutual diffusion of tin-containing coating red copper columns/spherical crown-shaped solder ball interface atoms in a high-temperature solid phase state can further promote the connection strength of the planted columns, so that interconnection of two ends of the array tin-containing coating red copper columns is realized, and the chip carrier substrate are not impacted by mechanical force, and the chip is protected. The steps described in this embodiment may also be performed by first implanting pillars on the chip carrier substrate, and then completing the low-temperature reflow soldering process between the other end of the implanted array tin-containing coating red copper pillars and the array arrangement pads on the printed circuit board.
Example 2:
the CGA device array welding column interconnection structure can be used for connection between a primary packaged chip and a chip carrier substrate besides connection between a secondary packaged chip carrier substrate and a printed circuit board. A single welding column interconnection structure in the array welding column interconnection structure of the primary packaging is shown in fig. 4, wherein 1 is a cylindrical iron-nickel alloy column; 2 is a tin-containing coating at the periphery of the iron-nickel alloy column; 3 is an intermetallic compound layer generated between the iron-nickel alloy column and the tin-containing coating; 41 is a spherical crown shaped solder ball at the end of the planting column; 51 is a solder fillet formed after the other end of the tin-coating iron-nickel alloy column is subjected to low-temperature reflow soldering after the column is planted; 61 is a chip; 71 is a chip carrier substrate, 81 is a metal film pad on the chip/chip carrier substrate, and 91 is a solder resist on the chip/chip carrier substrate.
Taking the column implanting condition of the surface array welding columns in the first-level packaging as an example for illustration, the technological process of the CGA device array welding column interconnection structure mainly comprises the column implanting process of the welding columns on the array arrangement welding pads of the chip carrier substrate in the early stage and the reflow welding process between the other ends of the implanted array welding columns, the welding pads arranged on the array arrangement of the front surface of the chip and the soldering paste on the welding pads.
Aiming at the early column planting process, the method for improving the connection quality of the mould-free column planting of the CGA device comprises the following steps:
step one, manufacturing a tin-containing coating on the surface of a welding column:
preparing and chip carrier substrate pad diameter D according to design criteria1The matched cylindrical iron-nickel alloy columns with uniform specification and size have the diameter d1(D1/5≤d1≤D1/3) iron-nickel alloy column height of l1The length-diameter ratio is 16; after ultrasonic cleaning is carried out in alcohol solution, a tin-containing coating is formed on the surface of the iron-nickel alloy column with the standard size by adopting methods such as hot dipping tin or electroplating, and then ultrasonic cleaning is carried out to avoid substances which influence subsequent connection and are remained on the surface of the tin-containing coating; the thickness of the prepared tin-containing coating is not less than 5 micrometers and not more than 25 micrometers, and the tin-containing coating is required to be uniform in thickness, bright in surface, free of balls or non-wetting phenomenon;
step two, carrying out low-temperature aging treatment on the tin-containing coating iron-nickel alloy column, and controlling the aging temperature and the aging time so as to form a continuous intermetallic compound layer with proper thickness and shape on the interface of the welding column/the tin-containing coating;
printing a proper amount of soldering paste on the bonding pads arranged in the array of the chip carrier substrate; the same as the traditional solder bump ball-planting process, the same amount and enough amount of Sn5.0Sb lead-free solder paste is printed on the pads which are arranged in array on the chip carrier substrate by means of the mature template printing process, and the printing amount of the solder paste is such that the height h of the solder ball after reflow soldering is not less than 4/5 times of the diameter D of the pad1；
Step four, heating the soldering paste to form an array spherical crown-shaped solder ball with consistent height:
heating the solder paste according to a reflow heating curve of the Sn5.0Sb lead-free solder paste, wherein the reflow peak temperature is controlled to be 30 +/-5 ℃ above the melting point of the solder, activating the solder in the solder paste, removing an oxide film, melting the solder in the solder paste, wetting the pads arranged in an array, and forming array spherical solder balls with consistent height on the pads arranged in an array of the chip carrier substrate;
step five, planting the single welding column containing the tin coating:
installing and clamping the tin-containing coating iron-nickel alloy column in a clamping head of a miniature precision drilling machine, wherein the length of the tin-containing coating iron-nickel alloy column exposed out of the clamping head is 1.8 times of the height h of a solder ball, and each tin-containing coating is coated in the column planting processThe parameters of the laminated iron-nickel alloy column are kept consistent. Controlling the movement of a chip carrier substrate where a bonding pad of the column to be planted is positioned by a program to enable the tin-containing coating iron-nickel alloy column to be positioned above the bonding pad of the column to be planted and to be aligned with the center of the bonding pad, and driving the tin-containing coating iron-nickel alloy column to rotate at 6500 r/min by using a miniature precision drilling machine chuck, and enabling the end part of the tin-containing coating iron-nickel alloy column to be slowly pressed and drilled into the spherical crown-shaped solder ball at a preset depth at a constant speed
Then stopping the feeding motion and the rotation of the tin-containing coating iron-nickel alloy column, and keeping the tin-containing coating iron-nickel alloy column static until the spherical crown-shaped solder ball is cooled to normal temperature; opening and lifting the chuck of the drilling machine to enable the tin-containing coating iron-nickel alloy column to be left in the spherical-crown-shaped solder ball on the bonding pad, and completing the column planting connection of the single tin-containing coating iron-nickel alloy column on the single bonding pad of the chip carrier substrate; as the process of rotating, pressing down and drilling the tin-containing coating iron-nickel alloy column into the spherical crown-shaped solder welding ball by the preset depth and the subsequent cooling to room temperature are carried out, the temperature of a homogeneous interface between the tin-containing coating and the spherical crown-shaped solder welding ball is increased, the processes of mutual contact, plastic deformation, friction heat generation adhesion, atomic mutual diffusion, dynamic recrystallization, temperature rise expansion and temperature reduction shrinkage of the spherical crown-shaped solder welding ball between the tin-containing coating and the tin-based solder are generated in the column planting process, the tin-containing coating iron-nickel alloy column is tightly held, and the reliable connection is finally formed; the column planting connection of the tin-containing coating iron-nickel alloy column is a result of the comprehensive action of a plastic deformation connection mechanism, a diffusion connection mechanism, a recrystallization connection mechanism and a mechanical expansion connection mechanism;
step six, array the column planting of the solder columns with the tin coatings:
repeating the process of the fifth step by using the same size parameters and process parameters, realizing the column planting process of the tin-coating iron-nickel alloy columns on each bonding pad arrayed on the chip carrier substrate one by one, and ensuring that the exposed ends of the tin-coating iron-nickel alloy columns are coplanar after column planting.
Firstly, column planting is carried out on a chip carrier substrate, then the low-temperature reflow soldering (the melting point of the adopted soldering paste is at least 40 ℃ lower than the melting point of a spherical crown-shaped solder ball at the end of the planted column, and the peak temperature is controlled to be 25 +/-5 ℃ higher than the melting point of the low-melting-point soldering paste) process between the other end of the planted array tin-containing coating iron-nickel alloy column and a chip front array arrangement bonding pad is completed, during the period, the planted column part is also in the same low-temperature reflow soldering heating environment, mutual diffusion of tin-containing coating iron-nickel alloy column/spherical crown-shaped solder ball interface atoms in a high-temperature solid phase state can further promote the improvement of the connection strength of the planted column, so that interconnection of two ends of the array tin-containing coating iron-nickel alloy column is realized, and the chip has no impact effect of mechanical force and has a protective effect on the chip.
Claims (10)
1. A method for improving the connection quality of a mold-free column planting of a CGA device is characterized by comprising the following steps:
step 1, preparing a tin-containing coating on the surface of a welding column:
a tin-containing coating is formed on the surface of the welding column with the standard size by adopting methods of hot dipping tin or electroplating and the like, and then necessary cleaning process is carried out to avoid substances which influence the subsequent connection and are remained on the surface of the tin-containing coating.
Step 2, carrying out low-temperature aging treatment on the tin-containing coating welding column so as to enable the welding column/tin-containing coating interface to form a continuous intermetallic compound layer with proper thickness and morphology;
step 3, printing a proper amount of soldering paste on the bonding pads arranged in the array;
step 4, heating the soldering paste to wet the array-arranged bonding pads to form array spherical solder balls with consistent heights;
step 5, planting the single solder column containing the tin coating:
the method comprises the following steps of (1) clamping a tin-containing coating welding column in a chuck of a miniature precision drilling machine, controlling a substrate where a welding pad of a column to be planted moves through a program, enabling the tin-containing coating welding column to be located above the welding pad of the column to be planted and to be aligned with the center of the welding pad, driving the tin-containing coating welding column to rotate by using the chuck of the miniature precision drilling machine, enabling the end part of the tin-containing coating welding column to slowly press and drill into a spherical crown-shaped solder welding ball at a constant speed to a preset depth S, stopping the feeding motion and rotation of the tin-containing coating welding column, and keeping the tin-containing coating welding column static until the spherical crown-shaped solder welding ball is cooled to normal temperature; opening and lifting the chuck of the drilling machine to enable the welding column containing the tin coating to be left in the spherical-crown-shaped solder ball on the welding disc, and completing column planting connection of the single welding column containing the tin coating;
step 6, array of column planting of the tin-containing coating welding column:
and (5) repeating the process of the step (5) by using the same size parameters and process parameters, realizing the column planting process of the tin-containing coating welding columns on the welding pads distributed in each array one by one, and ensuring that the exposed ends of the tin-containing coating welding columns of the array are coplanar after column planting.
2. The method of claim 1, wherein the solder columns in step 1 are any one of standard-sized red copper columns, brass columns, iron-nickel alloy columns and iron-nickel-cobalt alloy columns, and the aspect ratio of the solder columns is in the range of 6-20, and the diameter D of the solder columns is not less than 1/5 of the diameter D of the bonding pad and not more than 1/3 of the diameter D of the bonding pad.
3. The method of claim 2, wherein the tin-containing coating in step 1 is any one of pure tin coating, SnCu-based solder coating, SnAg-based solder coating, SnAgCu-based solder coating, SnSb-based solder coating, SnBi-based solder coating, and SnPb-based solder coating.
4. The method for improving the quality of the die-less post-implantation connection of the CGA device as claimed in claim 3, wherein the thickness of the tin-containing coating formed on the surface of the solder post in step 1 is 5-25 μm.
5. The method for improving the quality of the die-less stud-bonded connection of the CGA device according to claim 4, wherein the low temperature aging temperature range of the tin-containing coating solder stud in step 2 is 50 ℃ to 120 ℃.
6. The method for improving the quality of the die-less post-implantation connection of the CGA device as claimed in claim 5, wherein the thickness of the intermetallic compound layer formed at the post/tin-containing coating interface by the low temperature aging of the tin-containing coating post in step 2 is 0.5 to 2.5 μm.
7. The method for improving the quality of the die-less post-implant connection of the CGA device as claimed in claim 6, wherein the solder in the solder paste of step 3 is any one of SnCu-based, SnAg-based, SnAgCu-based and SnSb-based solder.
8. The method of claim 7, wherein the rotation speed range of the micro precision drill chuck used to rotate the solder columns with tin coating in step 5 is 2500 rpm to 8000 rpm.
9. The method of claim 8, wherein the solder columns with tin coating are mounted and clamped in the chuck of the micro precision drilling machine instead of the drill bit in step 5, the length of the solder columns with tin coating exposed out of the chuck is 1.2-2.0 times of the height h of the solder balls, the predetermined depth of the solder columns with tin coating pressed downwards in step 5 is S, 1/2h < S < h-0.1mm, and h is the height of the solder balls.
10. The method for improving the quality of the die-less post-implanted connection of the CGA device as claimed in any one of claims 1 to 9, wherein the step 5 of drilling the tin-containing coating solder post end into the solder ball in the shape of a spherical cap comprises the processes of generating heat by friction at the interface of the tin-containing coating/solder ball in the shape of a spherical cap, generating defects such as dislocation and the like by plastic deformation of the solder and the tin-containing coating near the interface, and dynamically recrystallizing the solder and the tin-containing coating in the near-interface large strain area to eliminate the original interface and the defects and finally form a reliable connection.
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| JP2016048728A (en) * | 2014-08-27 | 2016-04-07 | 株式会社村田製作所 | Conductive post and manufacturing method of multilayer substrate using conductive post |
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