CN113919191A - Analysis method for microwave low-pressure discharge - Google Patents
Analysis method for microwave low-pressure discharge Download PDFInfo
- Publication number
- CN113919191A CN113919191A CN202110988305.8A CN202110988305A CN113919191A CN 113919191 A CN113919191 A CN 113919191A CN 202110988305 A CN202110988305 A CN 202110988305A CN 113919191 A CN113919191 A CN 113919191A
- Authority
- CN
- China
- Prior art keywords
- number density
- electron
- particle
- flux
- boundary
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004458 analytical method Methods 0.000 title claims abstract description 17
- 239000002245 particle Substances 0.000 claims abstract description 91
- 238000000034 method Methods 0.000 claims abstract description 31
- 230000005672 electromagnetic field Effects 0.000 claims abstract description 21
- 230000008569 process Effects 0.000 claims abstract description 8
- 230000004907 flux Effects 0.000 claims description 45
- 150000002500 ions Chemical class 0.000 claims description 36
- 238000006243 chemical reaction Methods 0.000 claims description 18
- 238000004088 simulation Methods 0.000 claims description 17
- 230000005684 electric field Effects 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 11
- 230000007935 neutral effect Effects 0.000 claims description 6
- 239000006185 dispersion Substances 0.000 claims description 4
- 230000010354 integration Effects 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 2
- 239000012530 fluid Substances 0.000 abstract description 8
- 238000004364 calculation method Methods 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 5
- 238000004422 calculation algorithm Methods 0.000 abstract description 2
- 238000013461 design Methods 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000011161 development Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000013598 vector Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/20—Design optimisation, verification or simulation
- G06F30/23—Design optimisation, verification or simulation using finite element methods [FEM] or finite difference methods [FDM]
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/20—Design optimisation, verification or simulation
- G06F30/25—Design optimisation, verification or simulation using particle-based methods
-
- G—PHYSICS
- G16—INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTED FOR SPECIFIC APPLICATION FIELDS
- G16C—COMPUTATIONAL CHEMISTRY; CHEMOINFORMATICS; COMPUTATIONAL MATERIALS SCIENCE
- G16C20/00—Chemoinformatics, i.e. ICT specially adapted for the handling of physicochemical or structural data of chemical particles, elements, compounds or mixtures
- G16C20/10—Analysis or design of chemical reactions, syntheses or processes
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- Geometry (AREA)
- Chemical & Material Sciences (AREA)
- Evolutionary Computation (AREA)
- Computer Hardware Design (AREA)
- Life Sciences & Earth Sciences (AREA)
- Computing Systems (AREA)
- Bioinformatics & Computational Biology (AREA)
- Bioinformatics & Cheminformatics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
Abstract
A microwave low-pressure discharge analysis method aims at the characteristics that microwave low-pressure discharge is sensitive to a field and the electron avalanche effect is obvious, the distribution of a microwave field is accurately calculated by adopting a time domain finite difference method, then the low-pressure discharge process in a microwave field environment is simulated by combining with a particle continuity equation fluid, the discharge analysis precision can be ensured by controlling the calculation precision of an electromagnetic field, and the problem of low calculation efficiency of the microwave low-pressure discharge when the number of charged particles is large is solved by a fluid algorithm.
Description
Technical Field
The invention relates to an analysis method of microwave low-pressure discharge, belonging to the technical field of space high-power microwave technical research.
Background
In order to realize functions of long-distance carrying, stable landing measurement and control, deep-space data long-distance transmission and the like of a spacecraft, a microwave component applied to a payload of the spacecraft requires wider bandwidth, higher element integration level and larger power capacity, which inevitably results in higher electric field density and smaller gap size in the microwave component. The accurate and efficient microwave low-pressure discharge analysis method provides a powerful analysis tool for the design of high-power microwave components in a spacecraft loading system. The low-pressure discharge effect is an important factor influencing the stability performance of the microwave component of the spacecraft, and the damage to the microwave component is usually serious, and once the damage occurs, the reflected power is absorbed by the microwave component, so that permanent damage is caused to the component.
Disclosure of Invention
The technical problem solved by the invention is as follows: aiming at the problem that a method for simulating and analyzing low-pressure discharge effect is lacked in the prior art, a microwave low-pressure discharge analysis method is provided.
The technical scheme for solving the technical problems is as follows:
an analysis method of microwave low-pressure discharge comprises the following steps:
(1) reading in the target model structure, setting initial value of electromagnetic field, gas temperature T, gas pressure P, boundary condition, and initial ion number densityInitial electron number densityThe secondary electron emission coefficient of the structural material is gamma, the initial electron energy, the time step delta t and the simulation time, the particles comprise electrons, ions and excited particles, the lower corner marks are e, ion and exe respectively, and the set model structure is subjected to grid division;
(2) performing electromagnetic field propulsion according to a time domain finite difference method to obtain an electric field E and a magnetic field H at any position and time after grid division;
(3) solving the continuity equation of the particles to obtain the electron flux at t + delta t moment at any positionAnd the number densityIon fluxAnd the number densityFlux of excited particlesAnd the number density
(4) The electron flux obtained according to the step (3)And the number densitySolving to obtain the average energy of the electronsThereby obtaining the average temperature T of the electronse;
(5) Judging whether secondary electrons exist at the boundary according to the model structure material, and if so, judging according to the initial electron number densityIon number density obtained in step (3)And ion boundary velocityElectron boundary velocitySubstituted on the boundaryThe electron continuity equation of (A) yields the boundary secondary electron fluxThen the boundary secondary electron flux is generatedSubstituting the particle continuity equation in the step 1 to obtain the electron flux at the t + delta t moment at any positionAnd the number densityOtherwise, directly outputting the electron flux obtained in the step (3)And the number density
In the step (1), the model is subjected to equidistant staggered grid division according to the input frequency of the electromagnetic field, main grid nodes, corresponding potential nodes and particle density nodes are set, and the grid division size is determined according to Courant stability conditions.
In the step (3), the chemical reaction rate constant k of each particle in the gas required for solving the continuity equation of the particle is obtainedrThe particle mobility mu is obtained by solving a steady state Boltzmann equation, and the diffusion coefficient D of the particles is obtained by an Einstein relational expression.
In the step (3), the discrete expression of the particle continuity equation is obtained by performing time and space integration on the continuity equation of the particle and grid dispersion:
in the formula, S is a source term of a continuity equation of each particle, and the expression is as follows:
wherein r represents the r-th reaction process, krDenotes a reaction rate constant, N, corresponding to the reactionrDenotes the number of species of particles participating in the r-th reaction process, nr,mDenotes the number density of the m-th particle participating in the r-th reaction process, wherein the number density of gas neutral molecules is nε=P/kBT。srIs a symbolic function defined as:
in the formula, gammae、Γw、Γs、ΓnThe total flux of the particles on the e, w, s and n nodes at any time respectively. Particle flux density at time ttComprises the following steps:
wherein sgn (q) represents a sign of charge of the charged particles, and for neutral particles sgn (q) 0, for positive ions sgn (q) 1, and for negative ions and electrons sgn (q) 1, μ represents the mobility of the particles, EtIs the corresponding electric field at time t, ntThe corresponding particle number density at the time t;
decoupling each particle continuity equation by taking a value at t moment of a source item S in a discrete expression of the particle continuity equation, and further obtaining the electron flux at t + delta t moment at any positionAnd the number densityIon fluxAnd the number densityFlux of excited particlesAnd the number density
In the step (4), the electron flux obtained according to the step 3And the number densityThe average energy of the electrons is obtained by
Calculating the average temperature T of the electronse:
In the formula, kBBoltzmann constant.
In the step (5), if the boundary is a material, it is determined that secondary electrons exist, and the number density of the secondary electrons is determined according to the initial number density of the secondary electronsIon number density obtained in step 3And ion boundary velocityDegree of rotationElectron boundary velocitySubstituting into the boundary electron continuity equation to obtain the boundary secondary electron flux
In the formula (I), the compound is shown in the specification,is the velocity of the boundary of the ion,velocity of ion heatTionM is the average temperature of the ions, which is the same as the gas temperature TionIs the mass of the ion. Electron boundary velocityElectron thermal velocity ve;thIs composed ofmeIs the mass of the electrons. Then the boundary secondary electron flux is generatedSubstituting the particle continuity equation in the step 1 to obtain the electron flux at the t + delta t moment at any positionAnd the number density
And (6) calculating the current formed by the charged particles according to the particle flux, feeding the current back to the electromagnetic field, judging whether the current exceeds a preset simulation time, repeating the steps (2) - (5) if the current does not exceed the preset simulation time, and ending the microwave low-pressure discharge analysis process if the current exceeds the preset simulation time and outputting a result.
Compared with the prior art, the invention has the advantages that:
(1) the analysis method for microwave low-pressure discharge provided by the invention is based on electromagnetic-fluid direct coupling modeling, realizes time domain finite difference combined fluid numerical modeling, considers the influence of charged particles in a plasma region formed by discharge on an electromagnetic field, not only accurately solves the electromagnetic field distribution, but also has higher calculation efficiency. Reference data are provided for the reliability design of the satellite, and the development and design cost of space microwave components is saved;
(2) aiming at the characteristics that microwave low-pressure discharge is sensitive to a field and the electron avalanche effect is obvious, the distribution of the microwave field is accurately calculated by adopting a time domain finite difference method, and the process of low-pressure discharge in the microwave field environment is simulated by combining a particle continuity equation fluid. The accuracy of discharge analysis is guaranteed by controlling the calculation accuracy of the electromagnetic field, the problem of low calculation efficiency when the number of charged particles is large is solved by a fluid algorithm, the secondary electron multiplication effect of the metal surface of the space microwave component is considered, and the whole process from low vacuum discharge to gas discharge of the microwave structure can be analyzed.
Drawings
FIG. 1 is a flow chart of microwave low-pressure discharge analysis provided by the present invention;
FIG. 2 is a schematic diagram of mesh generation control volume provided by the present invention
FIG. 3 is a diagram of a coaxial model architecture provided by the present invention;
FIG. 4 is a schematic diagram showing the average electron density and electron temperature with time when the electric field strength provided by the present invention is 1.5e 5V/m;
FIG. 5 is a schematic diagram showing the average electron density and the electron temperature with time when the electric field strength provided by the present invention is 5e 6V/m;
Detailed Description
An analysis method for microwave low-pressure discharge is based on electromagnetic-fluid direct coupling modeling, achieves time domain finite difference combined fluid numerical modeling, considers the influence of charged particles in a plasma region formed by discharge on an electromagnetic field, accurately solves electromagnetic field distribution and has high calculation efficiency. The method provides reference data for the reliability design of the satellite, saves the development and design cost of space microwave components, and comprises the following specific steps:
(1) reading in the target model structure, setting initial value of electromagnetic field, gas temperature T, gas pressure P, boundary condition, and initial ion number densityInitial electron number densityThe secondary electron emission coefficient of the structural material is gamma, the initial electron energy, the time step delta t and the simulation time, the particles comprise electrons, ions and excited particles, the lower corner marks are e, ion and exe respectively, and the set model structure is subjected to grid division;
(2) performing electromagnetic field propulsion according to a time domain finite difference method to obtain an electric field E and a magnetic field H at any position and time after grid division;
(3) solving the continuity equation of the particles to obtain the electron flux at the t + delta t moment at any positionAnd the number densityIon fluxAnd the number densityFlux of excited particlesAnd the number density
(4) The electron flux obtained according to the step (3)And the number densitySolving to obtain the average energy of the electronsThereby obtaining the average temperature T of the electronse;
(5) Judging whether secondary electrons exist at the boundary according to the model structure material, and if so, judging according to the initial electron number densityIon number density obtained in step (3)And ion boundary velocityElectron boundary velocitySubstituting into the electron continuity equation on the boundary to obtain the secondary electron flux on the boundaryThen the boundary secondary electron flux is generatedSubstituting into the particle continuity method in step 1Obtaining the electron flux at t + delta t moment at any positionAnd the number densityOtherwise, directly outputting the electron flux obtained in the step (3)And the number density
(6) And (3) calculating the current formed by the charged particles according to the particle flux, feeding the current back to the electromagnetic field, judging whether the preset simulation time is exceeded or not, if not, repeating the steps (2) - (5), and if the preset simulation time is exceeded, ending the microwave low-pressure discharge analysis process and outputting a result.
The following is further illustrated with reference to specific examples:
the specific steps are shown in figure 1:
(1) reading in the target model structure, setting initial value of electromagnetic field, gas temperature T, gas pressure P, boundary condition, and initial ion number densityInitial electron number densityThe secondary electron emission coefficient of the structural material is gamma, the initial electron energy, the time step delta t, the simulation time, and the chemical reaction rate constant k of each particle in the gasrThe particle mobility mu is obtained by solving a steady state Boltzmann equation, and the diffusion coefficient D of the particles is obtained by an Einstein relational expression. The particles comprise electrons, ions and excited particles, the lower corner marks are e, ion and exe respectively, and the set model structure is subjected to grid division;
matched according to input electromagnetic field frequencyThe pattern is subjected to equidistant staggered meshing, as shown in FIG. 2, where the intersections between the solid linesCalled main grid node, corresponding to the node of scalar such as electric potential phi and particle density n, the corresponding control volume is composed of the adjacent control interface lines of the main grid node, as shown by the shaded part in fig. 2 (a). The dotted line is called a control interface line, and the intersection point "x" of the control interface line and the main grid line is applied to a node of vectors such as the electric field intensity E and the particle flux density Γ. The shaded portion in fig. 2(b) represents the volume controlled by node e.
(2) Performing electromagnetic field propulsion according to a time domain finite difference method to obtain an electric field E and a magnetic field H at any position and time after grid division;
(3) solving the continuity equation of the particles (non-electrons) to obtain the electron flux at the t + delta t moment at any positionAnd the number densityIon fluxAnd the number densityFlux of excited particlesAnd the number density
And (3) performing time and space integration on a continuity equation of the particles and grid dispersion to obtain:
s is a source term of a continuity equation of each particle, and the expression is as follows:
wherein r represents the r-th reaction process, krDenotes a reaction rate constant, N, corresponding to the reactionrDenotes the number of species of particles participating in the r-th reaction process, nr,mDenotes the number density of the m-th particle participating in the r-th reaction process, wherein the number density of gas neutral molecules is nε=P/kBT。srIs a symbolic function defined as:
Γe、Γw、Γs、Γnthe total flux of the particles on the e, w, s and n nodes at any time respectively.
Particle flux density at time ttIs composed of
Wherein sgn (q) represents a sign of charge of the charged particles, and for neutral particles sgn (q) 0, for positive ions sgn (q) 1, and for negative ions and electrons sgn (q) 1, μ represents the mobility of the particles, EtIs the corresponding electric field at time t, ntThe corresponding particle number density at time t.
Decoupling each particle continuity equation by taking a time t value of a source term S in the formula (1) so as to obtain the electron flux of any position at the time t + delta tAnd the number densityIon fluxAnd the number densityFlux of excited particlesAnd the number density
(4) Electron flux obtained according to step 3And the number densitySolving equation (5) to obtain the average energy of electronsThereby obtaining the average temperature T of the electronse。
In the formula, kBIs the boltzmann constant, and is,
(5) and judging whether secondary electrons exist at the boundary or not according to the model structure material.
If the boundary is material, then considering that there is secondary electron, then according to the initial electron number densityIon number density obtained in step 3And ion boundary velocityElectron boundary velocitySubstituting into the equation (7) of electron continuity on the boundary to obtain the secondary electron flux on the boundary
Velocity of ion boundaryIs composed ofVelocity of ion heatTionM is the average temperature of the ions, which is the same as the gas temperature TionIs the mass of the ion. Electron boundary velocityElectron thermal velocity ve;thIs composed ofmeIs the mass of the electrons.
Then the boundary secondary electron flux is generatedSubstituting the particle continuity equation in the step 1 to obtain the electron flux at the t + delta t moment at any positionAnd the number density
If the boundary is a port, the secondary electrons are not considered to exist, the particle continuity equation in the step 1 is directly solved, and the electron flux at the t + delta t moment at any position is obtainedAnd the number density
(6) And (3) calculating the current formed by the charged particles according to the particle flux, feeding the current back to the electromagnetic field, judging whether the preset simulation time is exceeded or not, if not, repeating the steps (2) - (5), and if the preset simulation time is exceeded, ending the microwave low-pressure discharge analysis process and outputting a result.
Therein, a coaxial model structure as shown in fig. 3 is established to simulate a low-pressure discharge process in the coaxial structure. The radius of an outer conductor of the coaxial structure is 3.55mm, the radius of an inner conductor of the coaxial structure is 1.54mm, the length of the coaxial structure is 10mm, the working frequency is 3.2GHz, and the simulation time is 100 ns. The background gas was a mixed gas of Ne (95%) and Xe (5%) and the gas pressure was 30 Torr.
As shown in FIG. 4, the electric field strength of 1.5X 10 was obtained by simulation5The discharge results of the coaxial structure shown in FIG. 3 at V/m are shown in FIG. 4(a) as the change in the average electron density with time under this condition, and in FIG. 4(b) as the change in the average electron temperature with time under this condition. The average electron density increased first and then decreased, and it was considered that no discharge occurred.
As shown in FIG. 5, the electric field strength of 5X 10 was obtained by simulation6The discharge results of the coaxial structure shown in FIG. 3 at V/m are shown in FIG. 5(a) as the change in the average electron density with time under this condition, and in FIG. 5(b) as the change in the average electron temperature with time under this condition. The development of the average electron density over time increases exponentially, indicating thatA discharge occurs.
Although the present invention has been described with reference to the preferred embodiments, it is not intended to limit the present invention, and those skilled in the art can make variations and modifications of the present invention without departing from the spirit and scope of the present invention by using the methods and technical contents disclosed above.
Those skilled in the art will appreciate that the details of the invention not described in detail in this specification are well within the skill of those in the art.
Claims (7)
1. A method for analyzing microwave low-pressure discharge is characterized by comprising the following steps:
(1) reading in the target model structure, setting initial value of electromagnetic field, gas temperature T, gas pressure P, boundary condition, and initial ion number densityInitial electron number densityThe secondary electron emission coefficient of the structural material is gamma, the initial electron energy, the time step delta t and the simulation time, the particles comprise electrons, ions and excited particles, the lower corner marks are e, ion and exe respectively, and the set model structure is subjected to grid division;
(2) performing electromagnetic field propulsion according to a time domain finite difference method to obtain an electric field E and a magnetic field H at any position and time after grid division;
(3) solving the continuity equation of the particles to obtain the electron flux at t + delta t moment at any positionAnd the number densityIon fluxAnd the number densityFlux of excited particlesAnd the number density
(4) The electron flux obtained according to the step (3)And the number densitySolving to obtain the average energy of the electronsThereby obtaining the average temperature T of the electronse;
(5) Judging whether secondary electrons exist at the boundary according to the model structure material, and if so, judging according to the initial electron number densityIon number density obtained in step (3)And ion boundary velocityElectron boundary velocitySubstituting into the electron continuity equation on the boundary to obtain the secondary electron flux on the boundaryThen the boundary secondary electron flux is generatedSubstituting the particle continuity equation in the step 1 to obtain the electron flux at the t + delta t moment at any positionAnd the number densityOtherwise, directly outputting the electron flux obtained in the step (3)And the number density
2. The method of claim 1, wherein the method comprises the following steps:
in the step (1), the model is subjected to equidistant staggered grid division according to the input frequency of the electromagnetic field, main grid nodes, corresponding potential nodes and particle density nodes are set, and the grid division size is determined according to Courant stability conditions.
3. The method of claim 1, wherein the method comprises the following steps:
in the step (3), the chemical reaction rate constant k of each particle in the gas required for solving the continuity equation of the particle is obtainedrThe particle mobility mu is obtained by solving a steady state Boltzmann equation, and the particle expansionThe dispersion coefficient D is obtained from the Einstein relationship.
4. The method of claim 1, wherein the method comprises the following steps:
in the step (3), the discrete expression of the particle continuity equation is obtained by performing time and space integration on the continuity equation of the particle and grid dispersion:
in the formula, S is a source term of a continuity equation of each particle, and the expression is as follows:
in the formula (I), the compound is shown in the specification,ris shown asrA reaction process, krDenotes a reaction rate constant, N, corresponding to the reactionrDenotes the number of species of particles participating in the r-th reaction process, nr,mDenotes the number density of the m-th particle participating in the r-th reaction process, wherein the number density of gas neutral molecules is nε=P/kBT。srIs a symbolic function defined as:
in the formula, gammae、Γw、Γs、ΓnThe total flux of the particles on the e, w, s and n nodes at any time respectively. Particle flux density at time ttComprises the following steps:
wherein sgn (q) represents the sign of the charge of the charged particlesFor neutral particles sgn (q) 0, for positive ions sgn (q) 1, for negative ions and electrons sgn (q) 1, μ represents the mobility of the particles, EtIs the corresponding electric field at time t, ntThe corresponding particle number density at the time t;
decoupling each particle continuity equation by taking a value at t moment of a source item S in a discrete expression of the particle continuity equation, and further obtaining the electron flux at t + delta t moment at any positionAnd the number densityIon fluxAnd the number densityFlux of excited particlesAnd the number density
5. The method of claim 1, wherein the method comprises the following steps:
in the step (4), the electron flux obtained according to the step 3And the number densityThe average energy of the electrons is obtained by
Calculating the average temperature T of the electronse:
In the formula, kBBoltzmann constant.
6. The method of claim 1, wherein the method comprises the following steps: in the step (5), if the boundary is a material, it is determined that secondary electrons exist, and the number density of the secondary electrons is determined according to the initial number density of the secondary electronsIon number density obtained in step 3And ion boundary velocityElectron boundary velocitySubstituting into the boundary electron continuity equation to obtain the boundary secondary electron flux
In the formula,Is the velocity of the boundary of the ion,velocity of ion heatTionM is the average temperature of the ions, which is the same as the gas temperature TionIs the mass of the ion. Electron boundary velocityElectron thermal velocity ve;thIs composed ofmeIs the mass of the electrons. Then the boundary secondary electron flux is generatedSubstituting the particle continuity equation in the step 1 to obtain the electron flux at the t + delta t moment at any positionAnd the number density。
7. The method of claim 1, wherein the method comprises the following steps:
and (6) calculating the current formed by the charged particles according to the particle flux, feeding the current back to the electromagnetic field, judging whether the current exceeds a preset simulation time, repeating the steps (2) - (5) if the current does not exceed the preset simulation time, and ending the microwave low-pressure discharge analysis process if the current exceeds the preset simulation time and outputting a result.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110988305.8A CN113919191A (en) | 2021-08-26 | 2021-08-26 | Analysis method for microwave low-pressure discharge |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110988305.8A CN113919191A (en) | 2021-08-26 | 2021-08-26 | Analysis method for microwave low-pressure discharge |
Publications (1)
Publication Number | Publication Date |
---|---|
CN113919191A true CN113919191A (en) | 2022-01-11 |
Family
ID=79233144
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202110988305.8A Pending CN113919191A (en) | 2021-08-26 | 2021-08-26 | Analysis method for microwave low-pressure discharge |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN113919191A (en) |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10171776A (en) * | 1996-12-13 | 1998-06-26 | Mitsubishi Heavy Ind Ltd | Low voltage/high frequency discharging plasma analyzer |
CN102567780A (en) * | 2011-12-29 | 2012-07-11 | 西安空间无线电技术研究所 | Space microwave component low pressure discharge value simulation method |
CN102930102A (en) * | 2012-10-31 | 2013-02-13 | 西安空间无线电技术研究所 | Particle combination method in secondary electron multiplication simulation of microwave part |
CN106255304A (en) * | 2016-07-19 | 2016-12-21 | 中国人民解放军装甲兵工程学院 | Plasma density computational methods in a kind of cylinder |
CN110442919A (en) * | 2019-07-12 | 2019-11-12 | 西安空间无线电技术研究所 | A kind of microwave component micro discharge method for numerical simulation based on GPU architecture |
CN111709179A (en) * | 2020-05-28 | 2020-09-25 | 西安交通大学 | Rapid transition method for micro-discharge development process of microwave component |
-
2021
- 2021-08-26 CN CN202110988305.8A patent/CN113919191A/en active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10171776A (en) * | 1996-12-13 | 1998-06-26 | Mitsubishi Heavy Ind Ltd | Low voltage/high frequency discharging plasma analyzer |
CN102567780A (en) * | 2011-12-29 | 2012-07-11 | 西安空间无线电技术研究所 | Space microwave component low pressure discharge value simulation method |
CN102930102A (en) * | 2012-10-31 | 2013-02-13 | 西安空间无线电技术研究所 | Particle combination method in secondary electron multiplication simulation of microwave part |
CN106255304A (en) * | 2016-07-19 | 2016-12-21 | 中国人民解放军装甲兵工程学院 | Plasma density computational methods in a kind of cylinder |
CN110442919A (en) * | 2019-07-12 | 2019-11-12 | 西安空间无线电技术研究所 | A kind of microwave component micro discharge method for numerical simulation based on GPU architecture |
CN111709179A (en) * | 2020-05-28 | 2020-09-25 | 西安交通大学 | Rapid transition method for micro-discharge development process of microwave component |
Non-Patent Citations (10)
Title |
---|
CROSTINI: "流体力学基本方程(2)", Retrieved from the Internet <URL:https://zhuanlan.zhihu.com/p/355103088> * |
LIANG ZHOU 等: "Lattice Boltzmann simulation of the gas-solid adsorption process in reconstructed random porous media", PHYSICAL REVIEW E 93, 043101 (2016), 30 April 2016 (2016-04-30), pages 1 - 16 * |
LU-LU ZHAO 等: "Numerical study on discharge characteristics influenced by secondary electron emission in capacitive RF argon glow discharges by fluid modeling", CHIN. PHYS. B, vol. 27, no. 2, 28 February 2018 (2018-02-28), pages 025201 - 1 * |
QIAN LIU 等: "Numerical study of effect of secondary electron emission on discharge characteristics in low pressure capacitive RF argon discharge", PHYSICS OF PLASMAS, vol. 21, no. 8, 28 August 2014 (2014-08-28) * |
RUI WANG 等: "The Calculation of Electric Field for Low Pressure Discharge in Air From DC Parameters", THE 8TH EUROPEAN CONFERENCE ON ANTENNAS AND PROPAGATION (EUCAP 2014), 31 December 2014 (2014-12-31), pages 1655 - 1659 * |
周俊: "电磁粒子模拟方法及其应用研究", 中国博士学位论文全文数据库 基础科学辑, 15 May 2011 (2011-05-15), pages 005 - 62 * |
封国宝;崔万照;胡天存;陈邦道;王宁;: "基于表面构型的二次电子发射及微放电特性研究", 机械工程学报, no. 09, 21 November 2017 (2017-11-21), pages 135 - 141 * |
张娜 等: "Vaughan 模型二次电子能谱对空间微波 部件微放电效应的影响分析", 空间电子技术, no. 2, 25 April 2021 (2021-04-25), pages 23 - 26 * |
王瑞 等: "低气压放电效应研究进展", 空间电子技术, no. 1, 25 February 2015 (2015-02-25), pages 1 - 6 * |
袁忠才;时家明;黄勇;马柳;: "低温等离子体数值模拟方法的分析比较", 核聚变与等离子体物理, no. 03, 15 September 2008 (2008-09-15), pages 88 - 94 * |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Li et al. | Recent developments to the microwave tube simulator suite | |
CN102567780B (en) | Space microwave component low pressure discharge value simulation method | |
Munz et al. | Coupled particle-in-cell and direct simulation Monte Carlo method for simulating reactive plasma flows | |
Pflug et al. | Simulation of linear magnetron discharges in 2D and 3D | |
Pavarin et al. | Design of 50 W helicon plasma thruster | |
Jia et al. | Numerical and experimental diagnostics of dusty plasma in a coaxial gridded hollow cathode discharge | |
CN111800932B (en) | Plasma discharge process simulation method and system | |
CN107729608A (en) | Short air gap gas discharge numerical value emulation method based on time domain spectral element method | |
Marks et al. | Evaluation of algebraic models of anomalous transport in a multi-fluid Hall thruster code | |
Boccelli et al. | 14-moment maximum-entropy modeling of collisionless ions for Hall thruster discharges | |
CN113919191A (en) | Analysis method for microwave low-pressure discharge | |
Goebel et al. | Ion thruster performance impacts due to cathode wear | |
Crispel et al. | A plasma expansion model based on the full Euler–Poisson system | |
Bogaerts et al. | Monte Carlo model for the argon ions and fast argon atoms in a radio-frequency discharge | |
Ishiguro et al. | Three-dimensional particle-in-cell simulation of scrape-off-layer plasmas | |
CN110569564B (en) | Micro-discharge threshold prediction method for cabin-penetrating flange dielectric window | |
Swanekamp et al. | The rigid-beam model for simulating plasmas generated by intense electron beams | |
Shang | Solving schemes for computational magneto-aerodynamics | |
Raspopović | Space-resolved average kinetic energy of ion swarms in a uniform electric field | |
Ives et al. | Development of 3-D finite-element charged-particle code with adaptive meshing | |
Piskin et al. | Analysis and adjoint design optimization of hypersonic blunt bodies | |
Nuzzo | The Design and Development of a Miniature Gridded ECR Ion Thruster | |
Ma et al. | Plasma fluid simulation of RF discharge in non-uniform magnetic field for RF plasma thruster | |
Laguna et al. | An asymptotic preserving well-balanced scheme for the isothermal fluid equations in low-temperature plasma applications | |
Teixeira et al. | Progress and challenges in kinetic plasma modeling for high power microwave devices |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination |