CN113917712B - D-type optical fiber M-Z electro-optic modulator for eliminating lithium niobate thermoelectric effect and preparation method thereof - Google Patents

D-type optical fiber M-Z electro-optic modulator for eliminating lithium niobate thermoelectric effect and preparation method thereof Download PDF

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CN113917712B
CN113917712B CN202111210037.3A CN202111210037A CN113917712B CN 113917712 B CN113917712 B CN 113917712B CN 202111210037 A CN202111210037 A CN 202111210037A CN 113917712 B CN113917712 B CN 113917712B
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optical fiber
waveguide
lithium niobate
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CN113917712A (en
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李梦媛
何晓颖
忻向军
饶岚
李欣国
孙莉萍
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Accelink Technologies Co Ltd
Beijing University of Posts and Telecommunications
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Beijing University of Posts and Telecommunications
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    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/011Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  in optical waveguides, not otherwise provided for in this subclass
    • G02F1/0115Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  in optical waveguides, not otherwise provided for in this subclass in optical fibres
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/03Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
    • G02F1/035Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure

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  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
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  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
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Abstract

The invention relates to a D-type optical fiber M-Z electro-optical modulator capable of eliminating lithium niobate thermoelectric effect. The modulator comprises the following parts: the device comprises an optical fiber waveguide area, a coupling area, a modulation area, a thermoelectric effect elimination area, a slab waveguide area and a D-type optical fiber waveguide area. Light is transmitted through the optical fiber waveguide area, gradually coupled into the coupling area waveguide, is divided into two paths, generates phase difference after passing through the modulation area waveguide, realizes intensity modulation through the interference of the coupling area, and gradually coupled into the optical fiber waveguide through the coupling area. The thermoelectric effect eliminating area is wrapped on the Z surfaces of the D-type optical fiber waveguide area and the flat waveguide area to form a loop, so that the influence of thermoelectric charges generated in the working process of the M-Z electro-optic modulator on an external electric field is eliminated, the heat dissipation of the device is facilitated, the impedance matching is facilitated, the modulator efficiency is improved, and the working stability of the device is ensured.

Description

D-type optical fiber M-Z electro-optic modulator for eliminating lithium niobate thermoelectric effect and preparation method thereof
Technical Field
The invention can be applied to the fields of optical fiber communication, optical interconnection, optical sensing technology and the like, and particularly relates to an M-Z type X-cut lithium niobate thin film modulator structure with graphene as a conductive thin film, which is a novel lithium niobate modulator with low loss, high efficiency, high bandwidth and high stability.
Background
With the rapid development of 5G technology, the construction of a high-speed optical communication network is urgent, the demands for telecommunication services and bandwidth are rapidly increased, and by loading signals on light waves, people really realize reliable high-speed optical communication, and the development of various aspects such as work and life is promoted. The electro-optic modulator has very wide application in the technical fields of optical fiber communication, optical fiber sensing, microwave photonics, quantum communication and the like, is a core photoelectric component in an optoelectronic module, and is used for realizing the key functions of loading an electric signal onto an optical signal and utilizing the optical fiber for low-loss transmission. The lithium niobate electro-optical modulator is widely applied to the existing communication network because of the advantages of adjustable broadband, high extinction ratio, mature technology, easy industrial mass production and the like.
The lithium niobate thin film is peeled from the bulk lithium niobate crystal by means of "ion dicing" and bonded to the Si wafer with the silica buffer layer, to form a novel lithium niobate material, called lithium niobate thin film material. The ridge waveguide with the height of more than one hundred nanometers can be etched on the lithium niobate thin film material by adopting an optimized dry etching process, and the effective refractive index difference of the formed waveguide can reach more than 0.8 (the refractive index difference of the formed waveguide is far more than 0.02 of the traditional lithium niobate waveguide). Such strongly confining waveguides make it easier to achieve matching of the optical field to the microwave field when designing the modulator, thereby facilitating lower half-wave voltages and larger modulation bandwidths in shorter lengths. The advent of low-loss lithium niobate submicron-sized waveguides breaks the bottleneck of high driving voltage of conventional lithium niobate electro-optic modulators. The electrode spacing can be reduced to 5 micrometers, the overlapping degree of the electric field and the optical mode field is greatly improved, and the half-wave voltage is reduced from more than 20V cm to less than 2.8V cm. Therefore, under the same half-wave voltage, the length of the device can be greatly reduced compared with that of a traditional modulator, and meanwhile, the modulator can have the capability of ultrahigh modulation bandwidth larger than 100GHz through optimizing the parameters such as the width, the thickness, the interval and the like of the traveling wave electrode.
Although modulators based on lithium niobate thin films achieve lower half-wave voltages and larger modulation bandwidths and lower insertion loss. However, the thermal effect of lithium niobate itself has a still-existing effect on modulator stability. Therefore, in order to meet the application requirements of practical systems, improve the efficiency and quality of optical communication and ensure the stability of devices, it is highly desirable to design a lithium niobate M-Z electro-optical modulator with low loss, high efficiency, high bandwidth and high stability, which has important significance for further development of optical fiber communication systems.
Disclosure of Invention
Aiming at the problem of poor stability of the existing lithium niobate modulator, the invention provides a D-type optical fiber M-Z electro-optic modulator for eliminating the thermoelectric effect of lithium niobate. The structure not only ensures that the lithium niobate thin film modulator has compact structure, low loss and high performance, is compatible with an optical fiber system, but also improves the working stability.
In order to achieve the aim of the invention, the technical scheme adopted is as follows:
and attaching the graphene film to the Z surface of the X-cut lithium niobate film, and forming a loop.
Due to the excellent electrical conductivity and thermal conductivity (3000W/(m.K)) of the graphene, the influence of the internal heat charge of lithium niobate on an external electric field is eliminated, the heat dissipation of the device is also facilitated, and the influence of temperature on the device is further reduced. Meanwhile, the resistivity of graphene is about 10 -8 Omega.m, gold has a resistivity of 2.40X10 -8 According to the omega-m, the resistivity of the graphene is similar to that of the gold electrode, impedance matching between characteristic impedance and source impedance is facilitated, and the modulator efficiency can be improved.
Specifically, the invention provides a D-type optical fiber M-Z electro-optical modulator for eliminating lithium niobate thermoelectric effect, which comprises the following parts: the device comprises an optical fiber waveguide area, a coupling area, a modulation area, a thermoelectric effect elimination area, a slab waveguide area and a D-type optical fiber waveguide area. The two coupling areas are respectively positioned at the left side and the right side of the modulation area, the two coupling areas are connected with the modulation area, the coupling area at the left side is connected with the optical fiber waveguide area, and the coupling area at the right side is connected with the optical fiber waveguide area; the two coupling areas and the modulation area are both arranged above the slab waveguide area, the slab waveguide area is arranged above the plane of the D-type optical fiber waveguide area, and the D-type optical fiber waveguide area is far away from the two coupling areas and the modulation area. The thermoelectric effect eliminating area is wrapped on the Z surfaces of the D-type optical fiber waveguide area and the flat waveguide area to form a loop, so that the influence of thermoelectric charges generated in the working process of the M-Z electro-optic modulator on an external electric field is eliminated, the modulator is helped to dissipate heat, the thermoelectric effect eliminating area is favorable for realizing impedance matching, the modulation rate of the modulator is improved, and the working stability of the modulator is ensured.
The two coupling regions are structurally symmetrical, the coupling region on the left side comprises an evanescent coupling region and a 1×2MMI, and the coupling region on the right side comprises a 2×1MMI and an evanescent coupling region.
The modulation region adopts a Mach-Zehnder structure, two waveguides of the modulation region are lithium niobate waveguides and are symmetrically distributed right above the axis of the fiber core, two grounding metal electrodes are positioned at the outer sides of the two waveguides and are symmetrically distributed, and a signal metal electrode is positioned at the center of the two waveguides.
The D-type optical fiber waveguide area is obtained by removing part of the cladding and the fiber core from the optical fiber waveguide, and a plane is formed on the optical fiber waveguide and is used for manufacturing a thin film lithium niobate waveguide and a metal electrode on the plane.
The thermoelectric effect eliminating region is formed by 1-7 layers of graphene films, a cladding layer of the D-type optical fiber waveguide region and the Z face of the slab waveguide region are attached, and a loop is formed by the 1-7 layers of graphene films and the slab waveguide region.
When the optical fiber waveguide is particularly operated, light is gradually coupled into the evanescent coupling region waveguide from the fiber core of the optical fiber waveguide, the light is uniformly divided into two paths by the 1×2MMI and enters the two parallel lithium niobate waveguides, a voltage signal is applied to the signal metal electrode, the grounding metal electrode is grounded, the refractive index of the lithium niobate waveguide is changed due to the electro-optic effect under the action of an electric field, a refractive index difference is generated between the two waveguides, so that two light beams with the same phase generate a phase difference, then interference occurs through 2×1MMI coupling, intensity modulation is realized, and finally the light is coupled into the optical fiber waveguide through the evanescent coupling region. When the modulator works, thermal charges are generated by temperature rise, positive charges are concentrated on the-Z surface of lithium niobate, negative charges are concentrated on the +Z surface, namely, a thermoelectric field along the positive direction of the Z axis is generated, and at the moment, the graphene conductive film serving as a thermoelectric effect eliminating area forms an electrical loop to eliminate the thermal charges accumulated on the Z surface of the lithium niobate waveguide.
Meanwhile, the invention provides a preparation method of the D-type optical fiber M-Z electro-optic modulator for eliminating the lithium niobate thermoelectric effect, which comprises the following steps:
1) Removing the cladding and the fiber core by adopting a polishing method to obtain a polishing plane, wherein the optimal thickness of the removed fiber part is 58.5-61.2 microns;
2) Bonding an X-cut lithium niobate film on the polished surface obtained in the step 1);
3) Attaching a graphene film on the D-type optical fiber cladding and the Z surface of the X-cut lithium niobate film obtained in the step 2);
4) Manufacturing lithium niobate waveguides in the modulation region and the coupling region by adopting photoetching and etching processes, wherein the thin film lithium niobate waveguide of the evanescent coupling region in the coupling region on the left side is narrowed from 10 micrometers to 0.9 micrometers, and the thin film lithium niobate waveguide of the evanescent coupling region in the coupling region on the right side is widened from 0.9 micrometers to 10 micrometers;
5) And then sputtering metal electrodes on the inner sides and the outer sides of the two arms of the modulation region waveguide obtained in the step 4), wherein the metal electrodes and the graphene film are spaced more than 25 microns.
Compared with the existing lithium niobate modulator design scheme, the optimization of the invention is as follows:
1) The modulator with the structure has small volume, and reduces the loss of the device and the insertion loss;
2) The structure effectively solves the problem of long-term working drift of the modulator caused by the lithium niobate thermoelectric effect, and improves the stability of the lithium niobate modulator;
3) The graphene conductive film used by the structure has excellent heat conduction performance, and can reduce the influence of internal temperature change on devices;
4) The resistivity of the conductive film graphene used by the structure is close to that of a metallographic phase, impedance matching is facilitated, and modulator efficiency is improved.
Drawings
FIG. 1 is a schematic diagram of the thermoelectric effect of a cross section of a D-type optical fiber M-Z electro-optic modulator based on a lithium niobate thin film
FIG. 2 is a schematic diagram of a D-type optical fiber M-Z electro-optic modulator for improving thermoelectric effect after covering a graphene film
FIG. 3 is a top view of a D-type optical fiber M-Z electro-optic modulator based on lithium niobate thin film
FIG. 4 is a cross-sectional view of the evanescent coupling region of a D-fiber M-Z electro-optic modulator
FIG. 5 is a schematic diagram of a mode analysis of the coupling region of a D-type fiber M-Z electro-optic modulator, (a) is the transmission mode of light in the fiber; (b) Transmitting modes for light in a coupling waveguide region
Detailed Description
The drawings are for illustrative purposes only and are not to be construed as limiting the present patent;
the invention is further illustrated in the following figures and examples.
Example 1
The method for solving the long-term stability of the lithium niobate modulator provided by the invention is applied to the D-type optical fiber M-Z electro-optic modulator based on the lithium niobate thin film with reference to figures 2 to 4, and the device structure comprises: the optical fiber waveguide area 1, the coupling area 2, the modulation area 3, the coupling area 4, the thermoelectric effect eliminating area 5 and the flat waveguide area 6,D type optical fiber waveguide area 7. The coupling area 2 is connected with the optical fiber transmission area 1, the modulation area 3 is connected with the coupling area 2, the coupling area 4 is connected with the modulation area 3, the optical fiber transmission area 1 is connected with the coupling area 4, the coupling area 2, the modulation area 3 and the coupling area 4 are arranged above the flat waveguide area 6, the flat waveguide area 6 is arranged above the plane of the D-shaped optical fiber waveguide area 7 and far away from the coupling area 2, the modulation area 3 and the coupling area 4, and the thermoelectric effect eliminating area 5 is wrapped on the Z surfaces of the D-shaped optical fiber waveguide area 7 and the flat waveguide area 6 to form a loop.
Further, the coupling region 2 comprises an evanescent coupling region 21 and a 1×2MMI structure 22; the modulation region 3 includes a waveguide 33, a signal metal electrode 32, and a ground metal electrode 31; the coupling region 4 comprises an evanescent coupling region 41 and a 2 x 1MMI structure 42; the D-type fiber waveguide region 7 includes a cut-out core 71 and a cut-out cladding 72.
Further, the substrate 8 for fixing the D-type optical fiber M-Z electro-optic modulator is made of magnesium fluoride material; the coupling area 2, the waveguide 33 in the modulation area 3, the coupling area 4 and the slab waveguide area 6 are made of lithium niobate materials.
Further, the thermoelectric effect eliminating region 5 of the invention adopts a graphene conductive film to eliminate the thermoelectric effect of the lithium niobate material. As shown in fig. 1, when a common lithium niobate modulator works, a built-in electric field generated by a thermoelectric effect affects an operating electric field of the lithium niobate modulator, so that the modulator works unstably. The scheme shown in fig. 2 is adopted, and the excellent conductivity of graphene is utilized to eliminate the internal electric charge of lithium niobate, so that the built-in electric field generated by the thermoelectric effect is eliminated. As shown by the simulation result of FIG. 5, the addition of the graphene conductive film does not affect the transmission of light in the waveguide, thereby further ensuring the normal operation of the modulator.
Further, the electrode adopted by the invention is a traveling wave electrode, and comprises two grounded metal electrodes 31 and one signal metal electrode 32 which are respectively positioned at two sides of the lithium niobate waveguide 33.
Further, the modulation area adopts a Mach-Zehnder structure, the two thin film lithium niobate waveguides 33 are respectively an upper arm and a lower arm of the Mach-Zehnder structure, and are symmetrically distributed right above the fiber core axis, the two grounded metal electrodes 31 are located at the outer sides of the two arms and are symmetrically distributed, and the signal metal electrode 32 is located at the center of the two arms.
The invention provides a preparation method of a D-type optical fiber M-Z electro-optic modulator applying a graphene conductive film, which comprises the following steps:
1) Removing the cladding and the fiber core by adopting a polishing method to obtain a polishing plane, wherein the optimal thickness of the removed fiber part is 58.5-61.2 microns;
2) Bonding an X-cut lithium niobate film on the polished surface obtained in the step 1);
3) Attaching a graphene film on the D-type optical fiber cladding and the Z surface of the X-cut lithium niobate film obtained in the step 2);
4) Manufacturing lithium niobate waveguides in the modulation region and the coupling region by adopting photoetching and etching processes, wherein the thin film lithium niobate waveguide of the evanescent coupling region in the coupling region on the left side is narrowed from 10 micrometers to 0.9 micrometers, and the thin film lithium niobate waveguide of the evanescent coupling region in the coupling region on the right side is widened from 0.9 micrometers to 10 micrometers;
5) And then sputtering metal electrodes on the inner sides and the outer sides of the two arms of the modulation region waveguide obtained in the step 4), wherein the metal electrodes and the graphene film are spaced more than 25 microns.
It should be apparent that the above embodiments of the present invention are merely examples for clearly illustrating the present invention, and that various other changes and modifications may be made by one skilled in the art based on the above description. It is not necessary here nor is it exhaustive of all embodiments. Any modification, equivalent replacement, improvement, etc. which come within the spirit and principles of the invention are desired to be protected by the following claims.

Claims (6)

1. A D-type optical fiber M-Z electro-optic modulator for eliminating lithium niobate thermoelectric effect, characterized in that the whole structure comprises the following parts: the device comprises an optical fiber waveguide area, two coupling areas, a modulation area, a thermoelectric effect eliminating area, a flat waveguide area and a D-type optical fiber waveguide area, wherein the two coupling areas are respectively positioned at the left side and the right side of the modulation area, the two coupling areas are connected with the modulation area, the coupling area at the left side is connected with the optical fiber waveguide area, and the coupling area at the right side is connected with the optical fiber waveguide area; the two coupling areas and the modulation area are both arranged above the flat waveguide area, the flat waveguide area is arranged above the plane of the D-type optical fiber waveguide area, the D-type optical fiber waveguide area is far away from the two coupling areas and the modulation area, the thermoelectric effect eliminating area is wrapped on the Z surfaces of the D-type optical fiber waveguide area and the flat waveguide area to form a loop, the influence of thermoelectric charges generated in the working process of the M-Z electro-optic modulator on an external electric field is eliminated, the heat dissipation of the modulator is helped, the thermoelectric effect eliminating area is also beneficial to realizing impedance matching, the modulation rate of the modulator is improved, the working stability of the modulator is ensured,
light is transmitted in the fiber core of the optical fiber waveguide area, gradually coupled into the coupling area waveguide, split into two paths, generate phase difference after passing through the modulation area waveguide, realize intensity modulation through the interference of the coupling area, and gradually coupled into the optical fiber waveguide area through the coupling area, so as to realize electro-optic modulation.
2. A D-type optical fiber M-Z electro-optic modulator for eliminating lithium niobate thermoelectric effect as defined in claim 1, wherein: the two coupling regions are structurally symmetrical, the coupling region on the left side comprises an evanescent coupling region and a 1×2MMI, and the coupling region on the right side comprises a 2×1MMI and an evanescent coupling region.
3. A D-type optical fiber M-Z electro-optic modulator for eliminating lithium niobate thermoelectric effect as defined in claim 1, wherein: the modulation region adopts a Mach-Zehnder structure, two waveguides of the modulation region are lithium niobate waveguides and are symmetrically distributed right above the axis of the fiber core, two grounding metal electrodes are positioned at the outer sides of the two waveguides and are symmetrically distributed, and a signal metal electrode is positioned at the center of the two waveguides.
4. A D-type optical fiber M-Z electro-optic modulator for eliminating lithium niobate thermoelectric effect as defined in claim 1, wherein: the D-type optical fiber waveguide area is obtained by removing part of the cladding and the fiber core from the optical fiber waveguide, and a plane is formed on the optical fiber waveguide and is used for manufacturing a thin film lithium niobate waveguide and a metal electrode on the plane.
5. A D-type optical fiber M-Z electro-optic modulator for eliminating lithium niobate thermoelectric effect as defined in claim 1, wherein: and the thermoelectric effect eliminating region is formed by attaching 1-7 layers of graphene films on the cladding of the D-type optical fiber waveguide region and the Z surface of the slab waveguide region, so that the graphene films and the slab waveguide region form a loop.
6. A method for manufacturing a D-type optical fiber M-Z electro-optic modulator for eliminating lithium niobate thermoelectric effect according to any one of claims 1 to 5, characterized in that: the method comprises the following steps:
1) Removing the cladding and the fiber core by adopting a polishing method to obtain a polishing plane, wherein the optimal thickness of the removed fiber part is 58.5-61.2 microns;
2) Bonding an X-cut lithium niobate film on the polished surface obtained in the step 1);
3) Attaching a graphene film on the D-type optical fiber cladding and the Z surface of the X-cut lithium niobate film obtained in the step 2);
4) Manufacturing lithium niobate waveguides in the modulation region and the coupling region by adopting photoetching and etching processes, wherein the thin film lithium niobate waveguide of the evanescent coupling region in the coupling region on the left side is narrowed from 10 micrometers to 0.9 micrometers, and the thin film lithium niobate waveguide of the evanescent coupling region in the coupling region on the right side is widened from 0.9 micrometers to 10 micrometers;
5) And then sputtering metal electrodes on the inner sides and the outer sides of the two arms of the modulation region waveguide obtained in the step 4), wherein the metal electrodes and the graphene film are spaced more than 25 microns.
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010181661A (en) * 2009-02-06 2010-08-19 Anritsu Corp Light modulator
CN104483763A (en) * 2014-11-21 2015-04-01 北京遥测技术研究所 Integrated photoelectrical waveguide modulator with high efficient heat radiation structure and manufacturing method thereof
CN111487793A (en) * 2020-04-17 2020-08-04 中国科学院半导体研究所 Z-cut L NOI electro-optic modulator capable of improving modulation efficiency and application thereof
CN113126204A (en) * 2021-04-13 2021-07-16 中山大学 Visible light waveband thin-film lithium niobate grating coupler and preparation method thereof

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7231101B2 (en) * 2005-04-18 2007-06-12 Jds Uniphase Corporation Electro-optic waveguide device capable of suppressing bias point DC drift and thermal bias point shift

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010181661A (en) * 2009-02-06 2010-08-19 Anritsu Corp Light modulator
CN104483763A (en) * 2014-11-21 2015-04-01 北京遥测技术研究所 Integrated photoelectrical waveguide modulator with high efficient heat radiation structure and manufacturing method thereof
CN111487793A (en) * 2020-04-17 2020-08-04 中国科学院半导体研究所 Z-cut L NOI electro-optic modulator capable of improving modulation efficiency and application thereof
CN113126204A (en) * 2021-04-13 2021-07-16 中山大学 Visible light waveband thin-film lithium niobate grating coupler and preparation method thereof

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Low-loss,broadband MMI coupler based on thin film lithium niobate platform;Mengyuan Li,Lan Rao,Xiaoying He,Feng Tian,Xiaolong Pan and Xiangjun Xin;Physica Scripta;第98卷(第3期);全文 *

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