CN113913779A - High infrared element and preparation method and application thereof - Google Patents
High infrared element and preparation method and application thereof Download PDFInfo
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- CN113913779A CN113913779A CN202111171970.4A CN202111171970A CN113913779A CN 113913779 A CN113913779 A CN 113913779A CN 202111171970 A CN202111171970 A CN 202111171970A CN 113913779 A CN113913779 A CN 113913779A
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- 238000002360 preparation method Methods 0.000 title abstract description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 63
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 56
- 238000000576 coating method Methods 0.000 claims abstract description 45
- 239000011248 coating agent Substances 0.000 claims abstract description 42
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 24
- 239000007769 metal material Substances 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims abstract description 18
- 238000004519 manufacturing process Methods 0.000 claims abstract description 4
- 239000000835 fiber Substances 0.000 claims description 33
- 239000007789 gas Substances 0.000 claims description 19
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 18
- 238000010438 heat treatment Methods 0.000 claims description 15
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 13
- 239000001257 hydrogen Substances 0.000 claims description 11
- 229910052739 hydrogen Inorganic materials 0.000 claims description 11
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 9
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 9
- 229910052786 argon Inorganic materials 0.000 claims description 7
- 229910052799 carbon Inorganic materials 0.000 claims description 7
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 239000011261 inert gas Substances 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 claims description 3
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 claims description 3
- 239000005977 Ethylene Substances 0.000 claims description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 claims description 3
- 229910052790 beryllium Inorganic materials 0.000 claims description 3
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052797 bismuth Inorganic materials 0.000 claims description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 3
- 229910052793 cadmium Inorganic materials 0.000 claims description 3
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 claims description 3
- 239000006260 foam Substances 0.000 claims description 3
- 239000011888 foil Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052735 hafnium Inorganic materials 0.000 claims description 3
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 229910052741 iridium Inorganic materials 0.000 claims description 3
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 239000011133 lead Substances 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 239000011777 magnesium Substances 0.000 claims description 3
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052702 rhenium Inorganic materials 0.000 claims description 3
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims description 3
- 229910052703 rhodium Inorganic materials 0.000 claims description 3
- 239000010948 rhodium Substances 0.000 claims description 3
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052707 ruthenium Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 229910052720 vanadium Inorganic materials 0.000 claims description 3
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 239000011701 zinc Substances 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- 239000010408 film Substances 0.000 claims 1
- 230000005855 radiation Effects 0.000 abstract description 26
- 239000000758 substrate Substances 0.000 abstract description 10
- 238000011031 large-scale manufacturing process Methods 0.000 abstract description 2
- 239000002131 composite material Substances 0.000 description 14
- 229910001120 nichrome Inorganic materials 0.000 description 14
- 239000011889 copper foil Substances 0.000 description 10
- 229910000623 nickel–chromium alloy Inorganic materials 0.000 description 9
- 239000000463 material Substances 0.000 description 6
- 239000010453 quartz Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000001000 micrograph Methods 0.000 description 3
- 238000001237 Raman spectrum Methods 0.000 description 2
- 238000009529 body temperature measurement Methods 0.000 description 2
- 238000005485 electric heating Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910000604 Ferrochrome Inorganic materials 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
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- 238000009776 industrial production Methods 0.000 description 1
- 238000007603 infrared drying Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
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Abstract
The invention discloses a preparation method of a high infrared element, which comprises the following steps: providing a metal material; and growing the graphene coating on the surface of the metal material through chemical vapor deposition. Also disclosed are high infrared elements prepared by the method and devices comprising the high infrared elements. The method for growing the graphene infrared radiation enhancement coating on the metal material substrate is simple and effective, and is convenient for popularization to large-scale production; meanwhile, the infrared emission capability of the metal material is effectively enhanced by the graphene, so that the radiation temperature is greatly increased, and the graphene coating is tightly combined with the substrate and is not easy to fall off. The high infrared radiation element formed by the method is expected to be widely applied to the fields of aerospace, industrial kilns, metallurgical manufacturing, building coatings and the like.
Description
Technical Field
The invention relates to the field of application of graphene, in particular to application of graphene in the field of thermal radiation.
Background
With the progress of science and technology and the development of industry, the problem of energy shortage is increasingly highlighted, the application significance of infrared radiation materials is gradually shown under the background, and the attention of people to the infrared radiation materials is continuously increased. The infrared radiation material can radiate the heat of the base body in a radiation mode quickly and efficiently, on one hand, the temperature of the base body can be reduced for the heat dissipation field, and on the other hand, the external radiation temperature can be improved for the electric heating field.
The traditional metal material has excellent physical properties such as high electric conductivity, heat conductivity and the like, and is widely applied to daily life and industrial production. However, the infrared emissivity of the metal material is generally low, which limits the further improvement of the radiation heat dissipation and electric heating performance. The infrared radiation enhanced coating has high characteristic emissivity in an infrared band, and the application range is gradually expanded from the initial infrared drying and heating to the fields of aerospace, industrial kilns, metallurgical manufacturing, building coatings and the like.
The infrared radiation enhancement coating consists of a base material with high infrared emissivity and an adhesive, wherein the adhesive plays a role in bonding the base material and a metal substrate. Currently, the problems of low long-term use temperature of the adhesive, mismatch of thermal expansion coefficients of the adhesive and a metal substrate, weak adhesion and easy falling off generally exist in the infrared radiation enhanced coating, and the problems become a key challenge for limiting the application of the infrared radiation enhanced coating.
Disclosure of Invention
In order to overcome the defects, the invention provides a preparation method of a high infrared element, the high infrared element prepared by the method and application of the high infrared element.
The invention provides a preparation method of a high infrared element, which comprises the following steps: providing a metal material; and growing the graphene coating on the surface of the metal material through chemical vapor deposition.
According to another embodiment of the present invention, the carbon source gas is selected from one or more of methane, ethane, ethylene, acetylene, methanol, ethanol, etc., and the flow rate of the carbon source gas is 0.05sccm to 100sccm, such as, but not limited to, 2sccm, 10sccm, 50sccm, etc. Preferably, the method further comprises introducing an inert gas or a reducing gas into the plasma enhanced chemical vapor deposition system, wherein the inert gas is one or more selected from argon and nitrogen, and the reducing gas is hydrogen.
According to another embodiment of the present invention, the growth temperature of the chemical vapor deposition is 500-1100 ℃, such as, but not limited to, 650 ℃, 800 ℃, 1000 ℃. The heating rate is 1 ℃/min to 100 ℃/min, for example, but not limited to, 10 ℃/min, 30 ℃/min, 50 ℃/min, 70 ℃/min, 90 ℃/min, and the like.
According to an embodiment of the present disclosure, the chemical vapor deposition is plasma enhanced chemical vapor deposition, wherein the plasma source is one or a combination of rf, microwave, and dc plasma sources; the plasma source power is 10W-500W, such as, but not limited to, 50W, 150W, 300W, etc.
According to another embodiment of the present invention, the form of the metal material may be, but is not limited to, a block, a film, a foil, a fiber, or a foam.
According to another embodiment of the present invention, the metal material is a pure metal or an alloy; preferably, the metal material contains one or more elements selected from aluminum, beryllium, cadmium, cobalt, gold, hafnium, indium, iridium, iron, lead, molybdenum, nickel, platinum, palladium, rhenium, silver, tantalum, titanium, tungsten, vanadium, zinc, zirconium, bismuth, copper, manganese, magnesium, chromium, rhodium, ruthenium, and aluminum.
The invention also provides a high infrared element prepared by the method.
According to an embodiment of the present invention, the graphene coating is a horizontal graphene coating or a vertical graphene coating.
According to an embodiment of the present invention, the thickness of the graphene coating is 1nm to 100 μm.
The invention also provides a device comprising the high infrared element.
Compared with the prior art, the method for growing the graphene infrared radiation enhancement coating on the metal material substrate is simple and effective, and is convenient to popularize to large-scale production; meanwhile, the infrared emission capability of the metal material is effectively enhanced by the graphene, so that the radiation temperature is greatly increased, and the graphene coating is tightly combined with the substrate and is not easy to fall off. The high infrared radiation element formed by the method is expected to be widely applied to the fields of aerospace, industrial kilns, metallurgical manufacturing, building coatings and the like.
Drawings
Fig. 1 is a schematic structural diagram of the grown vertical graphene coating of example 1.
Fig. 2 is a scanning electron microscope image of the composite fiber prepared in example 1.
FIG. 3 is a cross-sectional scanning electron microscope image of the composite fiber prepared in example 1.
Fig. 4 is a graph comparing the emissivity of the bare nichrome fiber before forming a vertical graphene coating and the composite fiber after forming a vertical graphene coating in example 1.
Fig. 5 is a graph comparing the radiation temperature of the bare nichrome fiber before forming the vertical graphene coating and the composite fiber after forming the vertical graphene coating in example 1.
Fig. 6 is a raman spectrum of the composite fiber prepared in example 2.
Fig. 7 is a graph comparing the emissivity of bare nichrome fiber before forming a horizontal graphene coating and composite fiber after forming a horizontal graphene coating in example 2.
Fig. 8 is a graph comparing the radiation temperature of the bare copper foil before the vertical graphene coating is formed and the composite copper foil after the vertical graphene coating is formed in example 3.
Detailed Description
Exemplary embodiments that embody features and advantages of the invention are described in detail below in the specification. It is to be understood that the invention is capable of various modifications in various embodiments, all without departing from the scope of the invention.
The term "horizontal graphene" in this patent refers to two-dimensional graphene grown by chemical vapor deposition parallel to the growth substrate; "vertical graphene" refers to a three-dimensional morphology of graphene grown by plasma enhanced chemical deposition.
The invention provides a preparation method of a high infrared element, which comprises the following steps: providing a metal material; and growing the graphene coating on the surface of the metal material through chemical vapor deposition.
In an alternative embodiment, the carbon source gas is selected from one or more of methane, ethane, ethylene, acetylene, methanol, ethanol, and the like, and the flow rate of the carbon source gas is 0.05sccm to 100sccm, such as, but not limited to, 2sccm, 10sccm, 50sccm, and the like. Preferably, the method further comprises introducing an inert gas or a reducing gas into the plasma enhanced chemical vapor deposition system, wherein the inert gas is one or more selected from argon and nitrogen, and the reducing gas is hydrogen.
In an alternative embodiment, the growth temperature of the chemical vapor deposition is 500-1100 ℃, such as, but not limited to, 650 ℃, 800 ℃, 1000 ℃. The heating rate is 1 ℃/min to 100 ℃/min, for example, but not limited to, 10 ℃/min, 30 ℃/min, 50 ℃/min, 70 ℃/min, 90 ℃/min, and the like.
According to one embodiment of the present disclosure, the chemical vapor deposition system comprises a conventional chemical vapor deposition growth system to obtain horizontal graphene; the method also comprises the steps of growing the vertical graphene by adopting a plasma enhanced chemical vapor deposition technology, and achieving the purpose of reducing the growth temperature by using an additional plasma source to assist the pyrolysis of the carbon source gas. Wherein the plasma source of the plasma enhanced vapor deposition is one or the combination of a radio frequency plasma source, a microwave plasma source and a direct current plasma source; the plasma source power is 10W-500W, such as, but not limited to, 50W, 150W, 300W, etc.
In alternative embodiments, the metallic material may be in the form of, but is not limited to, a block, a film, a foil, a fiber, or a foam.
In an alternative embodiment, the metal material is a pure metal or an alloy; preferably, the metal material contains one or more elements selected from aluminum, beryllium, cadmium, cobalt, gold, hafnium, indium, iridium, iron, lead, molybdenum, nickel, platinum, palladium, rhenium, silver, tantalum, titanium, tungsten, vanadium, zinc, zirconium, bismuth, copper, manganese, magnesium, chromium, rhodium, ruthenium, and aluminum. For example, but not limited to, nichrome, ferrochromium, and the like.
The invention also provides a high infrared element prepared by the method. The high infrared element can be used in the field of heat dissipation, but also in the field of heating, due to the higher infrared radiation.
In alternative embodiments, the graphene coating may be a horizontal graphene coating or a vertical graphene coating. The thickness of the graphene coating is 1 nm-100 mu m, the enhancement effect is limited when the thickness of the coating is less than 1nm, and the coating is easy to fall off when the thickness of the coating is more than 100 mu m.
The invention also provides a device comprising the high infrared element.
The invention will be further illustrated by the following examples, but is not to be construed as being limited thereto. Unless otherwise specified, reagents, materials and the like used in the present invention are commercially available.
Example 1
Rf plasma enhanced chemical vapor deposition was performed on nichrome fibers using the apparatus shown in fig. 1. Providing a nickel-chromium alloy fiber as a growth substrate, fixing the nickel-chromium alloy fiber on a quartz carrier, and placing the nickel-chromium alloy fiber into a heating area of a chemical vapor deposition furnace of a quartz tube. Under the support of the quartz carrier, the nichrome fiber is positioned on the axial line of the quartz tube, and the plasma is uniformly distributed on the surface of the nichrome fiber. Wherein the diameter of the nichrome fiber is 140 μm and the length is 10 cm.
And heating the chemical vapor deposition furnace under the hydrogen atmosphere with the flow of 100sccm, wherein the heating rate is 20 ℃/min. And after the temperature of the system reaches the growth temperature of 650 ℃, continuously annealing for 30min in a hydrogen atmosphere to remove impurities such as oxides on the surface of the nickel-chromium alloy fiber. And closing hydrogen, and introducing 10sccm methane gas, wherein the system pressure is 25 Pa. Meanwhile, a radio frequency alternating current power supply is started, the radio frequency power is 150W, and the growth time is 4 h. And after the growth is finished, closing the alternating current radio frequency power supply, stopping introducing methane gas, introducing 50sccm hydrogen and 300sccm argon, and cooling the chemical vapor deposition furnace to obtain the vertical graphene composite nickel-chromium alloy fiber.
Fig. 2 and 3 are scanning electron microscope and cross-sectional scanning electron microscope images of graphene on nichrome fibers, respectively, in example 1. It can be seen from the figure that the morphology of the graphene obtained by plasma enhanced chemical vapor deposition is a three-dimensional vertical structure (vertical graphene), and the thickness of the vertical graphene coating is about 1.7 μm.
Emissivity and radiation temperature measurements were performed on the bare nichrome fiber without the vertical graphene coating and the composite nichrome fiber with the vertical graphene coating, and the results are shown in fig. 4 and 5. The result shows that the emissivity of the fiber before and after the growth of the vertical graphene coating is increased from ≈ 0.15 to ≈ 0.93 due to the infrared radiation enhancement effect of the vertical graphene, so that the radiation temperature at the same power when used as a heating wire is also remarkably increased.
Example 2
Providing a nickel-chromium alloy fiber as a growth substrate, and placing the nickel-chromium alloy fiber into a heating area of a chemical vapor deposition furnace of a quartz tube to perform normal-pressure chemical vapor deposition. Wherein the diameter of the nichrome fiber is 140 μm and the length is 10 cm.
And heating the chemical vapor deposition furnace in the mixed atmosphere of 100sccm hydrogen and 100sccm argon at a heating rate of 15 ℃/min. And after the temperature of the system reaches 1050 ℃, continuously annealing for 30min to remove impurities such as oxide on the surface of the nickel-chromium alloy fiber. And introducing 20sccm methane gas to grow the graphene for 5 h. And after the growth is finished, stopping introducing methane gas, and quickly cooling the chemical vapor deposition furnace to obtain the horizontal graphene composite nickel-chromium alloy fiber.
Fig. 6 and 7 are a raman spectrum and an emissivity contrast graph of the graphene composite nichrome fiber in example 2. From the results of the raman spectrogram, it can be seen that the horizontal graphene obtained by growth is multilayer graphene (the number of layers is more than 10, and the thickness is more than 3.35 nm). Emissivity measurements show that the emissivity of the composite fiber prepared in example 2 at the same power is significantly increased compared to bare nichrome fiber.
Example 3
Providing a copper foil as a growth substrate, and placing the copper foil into a heating area of a chemical vapor deposition furnace of a quartz tube for radio frequency chemical vapor deposition. Wherein the copper foil has a thickness of 20 μm and a side length of about 2.5 cm.
And heating the chemical vapor deposition furnace in the mixed atmosphere of hydrogen with the flow rate of 50sccm and argon with the flow rate of 100sccm at a heating rate of 15 ℃/min. And after the system temperature reaches the growth temperature of 600 ℃, continuously annealing for 20min to remove impurities such as oxide on the surface of the copper foil. And closing hydrogen, and introducing 15sccm methane gas, wherein the system pressure is 32 Pa. And simultaneously, starting a radio frequency alternating current power supply, wherein the radio frequency power is 180W, and the growth time is 60 min. And after the growth is finished, closing the alternating-current radio-frequency power supply, stopping introducing methane gas, introducing 50sccm hydrogen and 300sccm argon, and cooling the chemical vapor deposition furnace to obtain the vertical graphene composite copper foil (the thickness is approximately equal to 7.2 microns).
The radiation temperature measurements were performed on the bare copper foil and the composite copper foil with the vertical graphene coating grown thereon on a 50 ℃ hot stage, and the results are shown in fig. 8. The result shows that the infrared radiation enhancement effect of the vertical graphene coating enables the radiation temperature of the copper foil to be increased from about 28 ℃ to about 48 ℃, and the heat dispersion performance is improved.
The preferred embodiments of the invention disclosed above are intended to be illustrative only. The preferred embodiments are not intended to be exhaustive or to limit the invention to the precise embodiments disclosed. Obviously, many modifications and variations are possible in light of the above teaching. The embodiments were chosen and described in order to best explain the principles of the invention and the practical application, to thereby enable others skilled in the art to best utilize the invention. The invention is limited only by the claims and their full scope and equivalents.
Claims (10)
1. A method for preparing a high infrared element, comprising:
providing a metal material; and
and growing the graphene coating on the surface of the metal material through chemical vapor deposition.
2. The method of claim 1, wherein the carbon source gas is selected from one or more of methane, ethane, ethylene, acetylene, methanol, and ethanol, and the flow rate of the carbon source gas is 0.05sccm to 100 sccm; preferably, the method further comprises introducing an inert gas or a reducing gas into the chemical vapor deposition system, wherein the inert gas is selected from one or more of argon and nitrogen, and the reducing gas is hydrogen.
3. The method of claim 1, wherein the growth temperature of the chemical vapor deposition is 500-1100 ℃; the heating rate is 1-100 ℃/min.
4. The method of claim 2, wherein the chemical vapor deposition is plasma enhanced chemical vapor deposition, wherein the plasma source is one of rf, microwave, dc plasma source or a combination thereof; the power of the plasma source is 10W-500W.
5. The method of claim 1, wherein the metallic material is in the form of a block, film, foil, fiber, or foam.
6. The method according to claim 1, wherein the metal material is a pure metal or an alloy; preferably, the metal material contains one or more elements selected from aluminum, beryllium, cadmium, cobalt, gold, hafnium, indium, iridium, iron, lead, molybdenum, nickel, platinum, palladium, rhenium, silver, tantalum, titanium, tungsten, vanadium, zinc, zirconium, bismuth, copper, manganese, magnesium, chromium, rhodium, ruthenium, and aluminum.
7. A high infrared element produced by the production method according to any one of claims 1 to 6.
8. The high infrared element of claim 7, wherein the graphene coating is a horizontal graphene coating or a vertical graphene coating.
9. The high infrared element of claim 7, wherein the graphene coating has a thickness of 1nm to 100 μm.
10. A device comprising a high infrared element according to any one of claims 7 to 9.
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| 李义春等: "《石墨烯材料及其应用研究进展概述》", 30 July 2021, 中国纺织出版社有限公司, pages: 174 * |
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