CN112030109B - Copper oxide film/silicon wafer composite structure and preparation method thereof - Google Patents

Copper oxide film/silicon wafer composite structure and preparation method thereof Download PDF

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CN112030109B
CN112030109B CN202010927732.0A CN202010927732A CN112030109B CN 112030109 B CN112030109 B CN 112030109B CN 202010927732 A CN202010927732 A CN 202010927732A CN 112030109 B CN112030109 B CN 112030109B
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silicon wafer
copper oxide
copper
oxide film
film
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CN112030109A (en
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韦江
王佳伟
胡强
程香平
陆磊
张友亮
焦斌斌
刘觐
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Institute of Applied Physics of Jiangxi Academy of Sciences
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5846—Reactive treatment
    • C23C14/5853—Oxidation

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  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
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Abstract

The invention provides a copper oxide film/silicon wafer composite structure and a preparation method thereof, and relates to the technical field of nano thin film material preparation. The invention deposits copper on the silicon wafer by a magnetron sputtering method, so that a copper film is uniformly deposited on the silicon wafer; the copper film/silicon wafer structure is subjected to oxidation reaction under the ozone condition, and can oxidize copper in the copper film into copper oxide; and then the subsequent heat treatment is carried out, so that the bonding strength between the copper oxide film and the silicon wafer substrate is strengthened. The copper oxide film of the copper oxide film/silicon wafer composite structure is formed by stacking nano-sized copper oxide, the structure of the nano-sized copper oxide is a nano-sheet structure or a granular structure, the thickness of the nano-sheet structure is 100-200 nm, and the size of the nano-granular structure is 200-300 nm. In the invention, the film-based bonding force between the copper oxide film and the silicon wafer is more than 100 μ N, and the bonding is stable, does not fall off and is not separated.

Description

Copper oxide film/silicon wafer composite structure and preparation method thereof
Technical Field
The invention relates to the technical field of nano thin film material preparation, in particular to a copper oxide film/silicon wafer composite structure and a preparation method thereof.
Background
Copper oxide is a p-type semiconductor material, and is often used as a catalyst, an electrode material, photo-thermal, a light guide, and a sensor material, and thus has very important engineering significance and economic value.
The nano material has larger specific surface area and physical and chemical properties different from those of a block material, so that the preparation of the nano material is one of the hot points of research in the scientific research community at present. The silicon wafer is a basic material of the current semiconductor industrial product, and the copper oxide is attached to the silicon wafer, so that the physical and chemical properties of the copper oxide are utilized. However, the copper oxide film obtained by the method of directly heating the copper film to prepare the copper oxide film is very easy to curl and crack, and cannot be tightly and firmly combined with the silicon substrate, thereby seriously influencing the application of the copper oxide material.
Disclosure of Invention
In view of the above, the present invention is directed to a copper oxide film/silicon wafer composite structure and a method for preparing the same. The method provided by the invention can firmly combine the copper oxide film and the silicon wafer substrate together, and the application range of the copper oxide film/silicon wafer composite structure is expanded.
The invention provides a preparation method of a copper oxide film/silicon wafer composite structure, which comprises the following steps:
Performing magnetron sputtering copper on a silicon wafer by taking a copper target as a copper source to obtain a copper film/silicon wafer structure;
carrying out oxidation reaction on the copper film/silicon wafer structure under the ozone atmosphere to obtain a precursor structure;
and carrying out heat treatment on the precursor structure in an air atmosphere to obtain the copper oxide film/silicon wafer composite structure.
Preferably, the silicon wafer is a silicon oxide wafer, and the average thickness of a silicon dioxide film on the silicon oxide wafer is 300-500 nm.
Preferably, the parameters of magnetron sputtering include: the magnetron sputtering atmosphere is high-purity argon, the pressure of magnetron sputtering is 0.6-1.0 Pa, and the power density of magnetron sputtering is 20-30W/cm 2 The magnetron sputtering time is 0.5-1 h.
Preferably, the thickness of the copper film in the copper film/silicon wafer structure is 1.5-3 μm.
Preferably, the flow rate of the ozone atmosphere is 3-5 g/h.
Preferably, the temperature of the oxidation reaction is room temperature, and the time is 10-20 min.
Preferably, the flow rate of the air atmosphere is 80-120L/min.
Preferably, the temperature of the heat treatment is 350-450 ℃, and the time is 0.5-1 h.
The invention also provides a copper oxide film/silicon wafer composite structure prepared by the preparation method in the technical scheme, wherein the copper oxide film of the copper oxide film/silicon wafer composite structure is formed by stacking nano-sized copper oxide, the nano-sized copper oxide is of a nano-flaky structure or a granular structure, the thickness of the nano-flaky structure is 100-200 nm, and the size of the nano-granular structure is 200-300 nm; the film-based bonding force between the copper oxide film and the silicon wafer is more than 100 mu N.
The invention provides a preparation method of a copper oxide film/silicon wafer composite structure, which comprises the following steps: performing magnetron sputtering copper on a silicon wafer by taking a copper target as a copper source to obtain a copper film/silicon wafer structure; carrying out oxidation reaction on the copper film/silicon wafer structure under the ozone atmosphere to obtain a precursor structure; and carrying out heat treatment on the precursor structure in an air atmosphere to obtain the copper oxide film/silicon wafer composite structure.
The invention deposits a copper film on a silicon wafer by a magnetron sputtering method, so that the copper film is uniformly deposited on the silicon wafer; the copper film/silicon wafer structure is subjected to oxidation reaction under the ozone condition, and can oxidize copper in the copper film into copper oxide; and then the subsequent heat treatment is carried out, so that the bonding strength between the copper oxide film and the silicon wafer substrate is strengthened. The data of the examples show that: the copper oxide film of the copper oxide film/silicon wafer composite structure is formed by stacking nano-sized copper oxide, the structure of the nano-sized copper oxide is a nano-sheet structure or a granular structure, the thickness of the nano-sheet structure is 100-200 nm, and the size of the nano-granular structure is 200-300 nm. In the invention, the film-based bonding force between the copper oxide film and the silicon wafer is more than 100 μ N, and the bonding is stable, does not fall off and is not separated. The method is simple and convenient and is easy for large-scale preparation.
Drawings
FIG. 1 is an appearance diagram of a macroscopic electronic digital photo of the copper oxide film/silicon wafer composite structure obtained in example 1;
FIG. 2 is a scanning electron microscope photograph of the surface of a copper oxide film in the copper oxide film/silicon wafer composite structure obtained in example 1;
FIG. 3 is an X-ray diffraction pattern of a copper oxide film in the copper oxide film/silicon wafer composite structure obtained in example 1;
FIG. 4 is a graph showing the results of a nano-scratch test of a copper oxide film and a silicon wafer in the copper oxide film/silicon wafer composite structure obtained in example 1;
FIG. 5 is an appearance diagram of a macroscopic electronic digital photo of the copper oxide film/silicon wafer composite structure obtained in example 2;
FIG. 6 is a surface scanning electron microscope photograph of a copper oxide film in the copper oxide film/silicon wafer composite structure obtained in example 2;
FIG. 7 is a graph showing the results of a nano-scratch test of a copper oxide film and a silicon wafer in the copper oxide film/silicon wafer composite structure obtained in example 2;
FIG. 8 is an appearance diagram of a macroscopic electronic digital photograph of the composite structure obtained in comparative example 1;
FIG. 9 is an appearance diagram of a macroscopic electronic digital photograph of the composite structure obtained in comparative example 2.
Detailed Description
The invention provides a preparation method of a copper oxide film/silicon wafer composite structure, which comprises the following steps:
performing magnetron sputtering copper on a silicon wafer by taking a copper target as a copper source to obtain a copper film/silicon wafer structure;
Carrying out oxidation reaction on the copper film/silicon wafer structure under the ozone atmosphere to obtain a precursor structure;
and carrying out heat treatment on the precursor structure in an air atmosphere to obtain the copper oxide film/silicon wafer composite structure.
The invention takes a copper target as a copper source, and copper is magnetically sputtered on a silicon wafer to obtain a copper film/silicon wafer structure.
In the present invention, the purity of the copper target is preferably 99.999%. In the invention, the silicon wafer is preferably a silicon oxide wafer, and the silicon oxide wafer preferably comprises a silicon wafer and a silicon dioxide film covering the surface of the silicon wafer; the average thickness of the silicon dioxide film on the silicon oxide wafer is preferably 300-500 nm; the area of the silicon wafer is preferably 3cm 2 Or 4cm 2 。
In the present invention, the parameters of the magnetron sputtering preferably include: the atmosphere of magnetron sputtering is preferably high-purity argon, and the purity of the high-purity argon is preferably 99.999 percent; the air pressure of magnetron sputtering is preferably 0.6-1 Pa, and more preferably 0.6 Pa; the power density of magnetron sputtering is preferably 20-30W/cm 2 More preferably 15W/cm 2 (ii) a The magnetron sputtering time is preferably 0.5-1 h.
In the invention, the thickness of the copper film in the copper film/silicon wafer structure is preferably 1.5-3 μm, and more preferably 2.0-2.5 μm.
In the present invention, magnetron sputtering enables uniform deposition of copper on a silicon substrate.
After the copper film/silicon wafer structure is obtained, the invention carries out oxidation reaction on the copper film/silicon wafer structure under the ozone atmosphere to obtain a precursor structure.
In the invention, the flow rate of the ozone atmosphere is preferably 3-5 g/h, and more preferably 4 g/h. In the invention, the temperature of the oxidation reaction is preferably room temperature, i.e. no additional heating or cooling is needed, and the time is preferably 10-20 min.
In the present invention, the oxidation reaction can oxidize copper in the copper film to copper oxide.
After the precursor structure is obtained, the precursor structure is subjected to heat treatment in an air atmosphere to obtain the copper oxide film/silicon wafer composite structure.
In the invention, the flow rate of the air atmosphere is preferably 80-120L/min, more preferably 90-110L/min, and even more preferably 100L/min. In the invention, the temperature of the heat treatment is preferably 350-450 ℃, and more preferably 400 ℃; the time is preferably 0.5 to 2 hours, and more preferably 1.0 to 1.5 hours.
In the invention, the bonding force between the copper oxide film and the silicon wafer can be enhanced by heat treatment.
The invention also provides a copper oxide film/silicon wafer composite structure prepared by the preparation method in the technical scheme, wherein the copper oxide film of the copper oxide film/silicon wafer composite structure is formed by stacking nano-sized copper oxide, the nano-sized copper oxide is of a nano-flaky structure or a granular structure, the thickness of the nano-flaky structure is 100-200 nm, and the size of the nano-granular structure is 200-300 nm; the film-based bonding force between the copper oxide film and the silicon wafer is more than 100 mu N.
The copper oxide film/silicon wafer composite structure and the method for producing the same according to the present invention will be described in detail with reference to examples, but they should not be construed as limiting the scope of the present invention.
Example 1
A silicon wafer (area 4 cm) having a surface covered with silicon dioxide having an average thickness of 300nm 2 ) As a sputtering substrate, a copper target with the purity of 99.999 percent is used as a sputtering target material, and a copper film with the thickness of 1.5 mu m is sputtered on a silicon wafer in a magnetron sputtering mode to obtain a copper film/silicon wafer composite structure; parameters of magnetron sputtering include: the atmosphere of magnetron sputtering is high-purity argon, the purity is 99.999%, the air pressure is 0.6Pa, and the power density is 20W/cm 2 The time is 0.5 h;
placing the copper film/silicon wafer composite structure in a flowing ozone atmosphere, wherein the flow rate of the ozone atmosphere is 3g/h, and carrying out oxidation reaction for 10min at room temperature to obtain a precursor;
and (3) placing the precursor in an air atmosphere, wherein the flow rate of the air atmosphere is 80L/min, and carrying out heat treatment at 350 ℃ for 0.5h to obtain the copper oxide film/silicon wafer composite structure.
FIG. 1 is an appearance diagram of a macroscopic electronic digital photo of the copper oxide film/silicon wafer composite structure obtained in example 1; as can be seen from fig. 1: the copper oxide film in the obtained copper oxide film/silicon wafer composite structure is flat and uniform in appearance and does not peel off or fall off visually.
FIG. 2 is a scanning electron microscope photograph of the surface of a copper oxide film in the copper oxide film/silicon wafer composite structure obtained in example 1; as can be seen from FIG. 2, the copper oxide film in the obtained copper oxide film/silicon wafer composite structure is a densely arranged sheet-like nanostructure material, and the thickness of the sheet-like nanostructure is 100-200 nm.
FIG. 3 is an X-ray diffraction pattern of a copper oxide film in the copper oxide film/silicon wafer composite structure obtained in example 1; as can be seen from fig. 3, the copper oxide film/silicon wafer composite structure prepared in example 1 was crystalline copper oxide.
Testing the bonding strength between the copper oxide film and the silicon wafer in the copper oxide film/silicon wafer composite structure by using a nano scratch method, wherein FIG. 4 is a film-based bonding strength diagram of the copper oxide film and the silicon wafer in the copper oxide film/silicon wafer composite structure obtained in example 1; as can be seen from FIG. 4, the bonding force between the copper oxide film and the silicon wafer in the copper oxide film/silicon wafer composite structure obtained in example 1 was greater than 100 μ N.
Example 2
The surface was covered with silica (area 3 cm) having an average thickness of 300nm 2 ) The silicon wafer is used as a sputtering substrate, a copper target with the purity of 99.999 percent is used as a sputtering target material, and a copper film with the thickness of 3 mu m is sputtered on the silicon wafer in a magnetron sputtering mode to obtain a copper film/silicon wafer composite structure; the atmosphere of magnetron sputtering is high-purity argon gas, the purity of the high-purity argon gas is 99.999 percent, the air pressure is 1Pa, and the power density is 20W/cm 2 The time is 1 h;
placing the copper film/silicon wafer composite structure in a flowing ozone atmosphere, wherein the flow rate of the ozone atmosphere is 5g/h, and carrying out oxidation reaction for 20min at room temperature to obtain a precursor;
and (3) placing the precursor in an air atmosphere with the flow rate of 120L/min, and carrying out heat treatment at 450 ℃ for 1h to obtain the copper oxide film/silicon wafer composite structure.
FIG. 5 is a macroscopic electronic digital photograph appearance of the copper oxide film/silicon wafer composite structure obtained in example 2; as can be seen from fig. 5: the copper oxide film in the obtained copper oxide film/silicon wafer composite structure is flat and uniform in appearance and does not peel off or fall off visually.
FIG. 6 is a scanning electron microscope photograph of the surface of a copper oxide film in the copper oxide film/silicon wafer composite structure obtained in example 2; as can be seen from fig. 6, the copper oxide film in the obtained copper oxide film/silicon wafer composite structure was a granular nanostructure material densely arranged.
Fig. 7 shows the results of testing the bonding strength between the copper oxide film and the silicon wafer in the copper oxide film/silicon wafer composite structure obtained in example 2 by the same nano-scratch method as in example 1, wherein: the bonding force between the copper oxide film and the silicon wafer in the copper oxide film/silicon wafer composite structure obtained in the embodiment is more than 100 μ N.
Comparative example 1
The same as in example 1, except that no ozone oxidation treatment was performed, the heat treatment was carried out by: heating from room temperature to 500 ℃, keeping the temperature for 2h at the heating rate of 10 ℃/min, and cooling to room temperature along with the furnace. Fig. 8 is an appearance diagram of a macroscopic electronic digital photograph of the composite structure obtained in the comparative example, and it can be seen from fig. 8 that: the copper oxide film in the resulting composite structure had visible cracking and flaking.
Comparative example 2
The same as in example 1, except that the heat treatment was not performed.
Fig. 9 is an appearance diagram of a macroscopic electronic digital photograph of the composite structure obtained in the present comparative example, and it can be seen from fig. 9 that: the copper oxide film in the obtained composite structure has the phenomena of instability and fading side reaction.
As can be seen from the above examples and comparative examples, the copper oxide film of the copper oxide film/silicon wafer composite structure provided by the present invention is formed by stacking nano-sized copper oxide, the nano-sized copper oxide has a nano-sheet structure or a particle structure, the thickness of the nano-sheet structure is 100 to 200nm, and the size of the nano-particle structure is 200 to 300 nm. In the invention, the film-based bonding force between the copper oxide film and the silicon wafer is more than 100 μ N, and the bonding is stable, does not fall off and is not separated. The method is simple and convenient and is easy for large-scale preparation.
It is to be understood that the foregoing embodiments, drawings and description are for illustrative purposes only and that various modifications of the invention will be apparent to those skilled in the art. Such modifications are intended to be included within the spirit and scope of this application and the scope of the appended claims.

Claims (6)

1. A preparation method of a copper oxide film/silicon wafer composite structure is characterized by comprising the following steps:
taking a copper target as a copper source, and carrying out magnetron sputtering copper on a silicon wafer to obtain a copper film/silicon wafer structure;
carrying out oxidation reaction on the copper film/silicon wafer structure under the ozone atmosphere to obtain a precursor structure;
carrying out heat treatment on the precursor structure in an air atmosphere to obtain the copper oxide film/silicon wafer composite structure;
the temperature of the oxidation reaction is room temperature, and the time is 10-20 min;
the temperature of the heat treatment is 350-450 ℃, and the time is 0.5-1 h;
the parameters of magnetron sputtering include: the magnetron sputtering atmosphere is high-purity argon, the pressure of magnetron sputtering is 0.6-1.0 Pa, and the power density of magnetron sputtering is 20-30W/cm 2 The magnetron sputtering time is 0.5-1 h.
2. The production method according to claim 1, wherein the silicon wafer is a silicon oxide wafer on which a thin film of silicon dioxide has an average thickness of 300 to 500 nm.
3. The method according to claim 1, wherein the thickness of the copper film in the copper film/silicon wafer structure is 1.5 to 3 μm.
4. The method according to claim 1, wherein the flow rate of the ozone atmosphere is 3 to 5 g/h.
5. The method according to claim 1, wherein the flow rate of the air atmosphere is 80 to 120L/min.
6. The copper oxide film/silicon wafer composite structure prepared by the preparation method of any one of claims 1 to 5, wherein the copper oxide film of the copper oxide film/silicon wafer composite structure is formed by stacking nano-sized copper oxide, the nano-sized copper oxide has a nano-sheet structure or a granular structure, the thickness of the nano-sheet structure is 100 to 200nm, and the size of the nano-granular structure is 200 to 300 nm; the film-based bonding force between the copper oxide film and the silicon wafer is more than 100 mu N.
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102181831A (en) * 2011-04-15 2011-09-14 河南大学 Preparation method for copper oxide nano line array film
CN102289021A (en) * 2010-06-16 2011-12-21 精工爱普生株式会社 Polarization device, method of manufacturing same, liquid crystal device, and electronic apparatus
CN105675650A (en) * 2016-01-21 2016-06-15 天津大学 Manufacturing method of porous silicon based copper oxide composite structural gas sensors applied at room temperature

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102289021A (en) * 2010-06-16 2011-12-21 精工爱普生株式会社 Polarization device, method of manufacturing same, liquid crystal device, and electronic apparatus
CN102181831A (en) * 2011-04-15 2011-09-14 河南大学 Preparation method for copper oxide nano line array film
CN105675650A (en) * 2016-01-21 2016-06-15 天津大学 Manufacturing method of porous silicon based copper oxide composite structural gas sensors applied at room temperature

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Deposition Optimization and Property Characterization of Copper-Oxide Thin Films Preparaed by Reactive Sputtering;Yil-Hwan You,et al.;《Journal of the Microelectronics & Packaging Society》;20131231;第20卷(第1期);第27-31页 *
钴掺杂氧化物材料的微观结构与磁学行为;姜鹤;《中国博士学位论文全文数据库 工程科技I辑》;20130715(第7期);第78-79页 *

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