CN113889540A - Double-sided inorganic semitransparent CsPbBr3Thin film perovskite solar cell and preparation method thereof - Google Patents
Double-sided inorganic semitransparent CsPbBr3Thin film perovskite solar cell and preparation method thereof Download PDFInfo
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022491—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of a thin transparent metal layer, e.g. gold
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to a double-sided inorganic semitransparent CsPbBr3The thin film perovskite solar cell comprises a transparent substrate, and a first optical coupling layer, a first metal transparent electrode, a first transmission layer, CsPbBr, a first metal layer, a second metal layer and a second metal layer which are sequentially stacked on the transparent substrate3The light-absorbing layer comprises a perovskite light-absorbing layer, a second transmission layer, a second metal transparent electrode and a second optical coupling layer. The electrode of the perovskite solar cell adopts an all-metal transparent electrode, and the cell is a double-sided inorganic semitransparent solar cell, so that the utilization efficiency of solar spectrum short-wave band light is improved, the photoelectric conversion efficiency can be improved, and the perovskite solar cell can be used for high-efficiency and low-cost photovoltaic power generation and can be used as a silicon laminated cellThe power generation efficiency of the silicon solar cell is improved.
Description
Technical Field
The invention belongs to the field of semiconductor solar cells, and particularly relates to double-sided inorganic semitransparent CsPbBr3A thin film perovskite solar cell and a preparation method thereof are provided.
Background
The energy crisis is an important problem facing the current society, and the development of a novel power generation technology mainly based on clean energy such as solar energy is an effective way for both energy supply and environmental protection. Novel photovoltaic materials represented by organometallic halogenated perovskites have gained much attention in recent years and have made great progress. In recent years, new perovskite thin film solar cells are receiving more and more attention and research due to the advantages of adjustable band gap (1.2-2.3eV), high light absorption coefficient, high energy conversion efficiency (25.2%), low manufacturing cost and the like. Especially, all-inorganic perovskites based on metal Cs and lead halides are more and more favored by researchers at home and abroad due to the excellent thermal stability, ultralow cost, simple preparation process and the like.
Among many inorganic perovskite materials, CsPbBr3Due to its ultra-high forbidden band width (>2.3eV), so that it has the most excellent stability and is attracting attention. However, CsPbBr is currently used3The photoelectric conversion efficiency of (A) is still low, resulting in the existing inorganic CsPbBr3The short-wave band utilization rate of the solar cell is low, so that the inorganic CsPbBr is ensured3The photoelectric conversion efficiency of the solar cell is low.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides double-sided inorganic semitransparent CsPbBr3A thin film perovskite solar cell and a preparation method thereof are provided. The technical problem to be solved by the invention is realized by the following technical scheme:
the embodiment of the invention provides double-sided inorganic semitransparent CsPbBr3Film calciumThe titanium ore solar cell is characterized by comprising a transparent substrate, and a first optical coupling layer, a first metal transparent electrode, a first transmission layer and CsPbBr which are sequentially stacked on the transparent substrate3The light-absorbing layer comprises a perovskite light-absorbing layer, a second transmission layer, a second metal transparent electrode and a second optical coupling layer.
In one embodiment of the invention, the light transmittance of the transparent substrate is greater than or equal to 80%, and the material of the transparent substrate comprises any one of glass, double-polished sapphire and PET flexible material.
In one embodiment of the present invention, the refractive indices of the first and second optical coupling layers are each greater than or equal to 2, and the materials each comprise MoO3、V2O5、TeO2、Al2O3、LiF、MgF2、SiO2Any one of the above-mentioned materials has a thickness of 25 to 35 nm.
In one embodiment of the invention, the light transmittance of the first metal transparent electrode and the light transmittance of the second metal transparent electrode are both greater than or equal to 80%, the thicknesses of the first metal transparent electrode and the second metal transparent electrode are both 9-12 nm, and the materials of the first metal transparent electrode and the second metal transparent electrode comprise any one of Au and Ag.
In one embodiment of the present invention, the first transport layer includes any one of an electron transport layer and a hole transport layer, and the second transport layer includes the other one of the electron transport layer and the hole transport layer.
In one embodiment of the invention, the material of the electron transport layer is an n-type semiconductor material, and the n-type semiconductor material comprises TiO2、SnO2Any one of ZnO and PCBM;
the material of the hole transport layer adopts a P-type semiconductor material, and the P-type semiconductor material comprises spiro-OMeTAD, P3HT, PEDOT: PSS, NiOxAny one of the above.
Another embodiment of the invention provides a double-sided inorganic semitransparent CsPbBr3The preparation method of the thin film perovskite solar cell comprises the following steps:
s1, preparing a first optical coupling layer on the transparent substrate by using a thermal evaporation technology;
s2, preparing a first metal transparent electrode on the first optical coupling layer by using a thermal evaporation technology;
s3, depositing a first transmission layer on the first metal transparent electrode by using a solution spin coating method;
s4, forming CsPbBr on the first transmission layer by using two-step solution spin coating method3A perovskite light-absorbing layer;
s5 spin coating CsPbBr on the substrate by solution3Depositing a second transmission layer on the perovskite light absorption layer;
s6, preparing a second metal transparent electrode on the second transmission layer by using a thermal evaporation technology;
and S7, preparing a second optical coupling layer on the second metal transparent electrode by using a thermal evaporation technology.
In one embodiment of the present invention, the first optical coupling layer and the second optical coupling layer are prepared under the following conditions: the growth temperature is 600 ℃, the growth pressure is 1E-4Pa, and the growth rate is
In one embodiment of the present invention, the first metal transparent electrode and the second metal transparent electrode are prepared under the following conditions: the growth pressure is 1E-4Pa, and the growth rate is
In one embodiment of the present invention, step S4 includes:
spin-coating a perovskite precursor solution on the first transmission layer at the rotating speed of 2000rpm for 30s, and then annealing at 90 ℃ for 30min to prepare a perovskite precursor layer;
spin-coating CsBr solution on the perovskite precursor layer at the rotating speed of 2000rpm for 30s, and then annealing at 250 ℃ for 5min to form a perovskite layer;
using isopropanol solution to punch at 2000rpmWashing the perovskite layer for 30s, and then annealing at 250 ℃ for 5min to form CsPbBr3A perovskite light absorbing layer.
Compared with the prior art, the invention has the beneficial effects that:
1. the electrode of the perovskite solar cell adopts the all-metal transparent electrode, and the cell is a double-sided inorganic semitransparent solar cell, so that the utilization efficiency of solar spectrum short-wave band light is improved, the photoelectric conversion efficiency can be improved, and the perovskite solar cell can be used for high-efficiency and low-cost photovoltaic power generation and can be used as a top cell of a silicon laminated cell to improve the power generation efficiency of the silicon solar cell.
2. The perovskite solar cell provided by the invention uses all-metal electrodes, can avoid the adoption of transparent oxide electrodes such as ITO (indium tin oxide), FTO (fluorine-doped tin oxide) and the like with high cost and complex process, and has low cost and simple preparation process.
Drawings
FIG. 1 shows a double-sided inorganic semitransparent CsPbBr according to an embodiment of the present invention3The structural schematic diagram of the thin film perovskite solar cell;
FIG. 2 shows a double-sided inorganic semitransparent CsPbBr according to an embodiment of the present invention3The flow schematic diagram of the preparation method of the thin film perovskite solar cell;
FIG. 3 is another double-sided inorganic translucent CsPbBr provided by the embodiment of the invention3The structural schematic diagram of the thin film perovskite solar cell;
FIG. 4 shows another double-sided inorganic semitransparent CsPbBr according to an embodiment of the present invention3The structure of the thin film perovskite solar cell is schematically shown.
Detailed Description
The present invention will be described in further detail with reference to specific examples, but the embodiments of the present invention are not limited thereto.
Example one
The invention prepares a novel double-sided semitransparent CsPbBr3 perovskite battery based on CsPbBr3 perovskite material, which is expected to improve the light utilization Efficiency of CsPbBr3 originally and then increase the Photoelectric Conversion Efficiency (PCE), and can be used for preparing silicon laminated batteries to improve the light Conversion Efficiency of silicon batteries.
In this embodiment, the double-sided translucent CsPbBr3The core difficulty of perovskite solar cell preparation lies in the preparation of the transparent electrode and CsPbBr3And (3) preparing the perovskite thin film. For transparent electrodes, the cost of the prior transparent conductive oxides such as ITO, FTO and the like is too high, and the preparation process conditions are harsh; and for CsPbBr3The perovskite thin film cannot prepare a precursor solution required by a one-step solution method due to the low solubility of CsBr, so that only a solvent can be replaced or the thin film can be prepared by a multi-step method. Therefore, in this example, a noble metal ultrathin transparent film is used as a transparent electrode, and a two-step method + aqueous solution method is used to prepare CsPbBr3A perovskite thin film.
Referring to fig. 1, fig. 1 shows a double-sided inorganic semitransparent CsPbBr according to an embodiment of the present invention3The structure of the thin film perovskite solar cell is schematically shown. The double-sided inorganic semitransparent CsPbBr3The thin film perovskite solar cell comprises: a transparent substrate 1, and a first optical coupling layer 2, a first metal transparent electrode 3, a first transmission layer 4, CsPbBr, sequentially laminated on the transparent substrate 13A perovskite light absorbing layer 5, a second transmission layer 6, a second metal transparent electrode 7 and a second optical coupling layer 8.
The transparent substrate 1 should be made of a high-light-transmittance material, the light transmittance of which should be greater than or equal to 80%, and the material may be any one of glass, double-polished sapphire and a PET flexible material.
The first optical coupling layer 2 and the second optical coupling layer 8 can both adopt high-refractive-index dielectric antireflection layer materials, the refractive index of the high-refractive-index dielectric antireflection layer materials is greater than or equal to 2, and the materials can adopt MoO3、V2O5、TeO2、Al2O3、LiF、MgF2、SiO2Any of them, the thickness of which may be 25 to 35 nm.
In this embodiment, the optical coupling layer adopts a high refractive index medium antireflection layer, which can reduce surface reflection and improve light transmittance of the metal electrode.
The first metal transparent electrode 3 and the second metal transparent electrode 7 can use the special ultra-low resistance of metal and the high light transmittance of the metal in a short wave band, and use an ultra-thin metal film, the light transmittance of the ultra-thin metal film is more than or equal to 80%, and the thickness of the ultra-thin metal film is 9-12 nm. Wherein the short wave band is 350-550 nm.
It can be understood that the solar cell of the embodiment adopts two-sided metal electrodes, and the transparent electrode can be realized when the light transmittance of the metal is more than 80%; for example, the material of the first metal transparent electrode 3 and the second metal transparent electrode 7 is any of Au and Ag that are highly transparent to light. Furthermore, when the metal transparent electrode is made of Ag, the square resistance of the electrode is 17-18 omega/sq, so that the ultralow resistance of the electrode is realized.
The electrode in the embodiment adopts an all-metal electrode, so that transparent oxide electrodes such as ITO (indium tin oxide), FTO (fluorine-doped tin oxide) and the like with high cost and complex process can be avoided, the cost is low, and the preparation process is simple.
The first transfer layer 4 and the second transfer layer 6 transfer the opposite type of electronic; for example, when the first transport layer 4 is an electron transport layer, it is a hole transport layer in the second transport layer 6; when the first transport layer 4 is a hole transport layer, the second transport layer 6 is an electron transport layer.
Specifically, the electron transport layer may use an n-type semiconductor material such as titanium oxide (TiO)2) Tin oxide (SnO)2) Metal oxides such as zinc oxide (ZnO), or organic substances such as fullerene (PCBM). The hole transport layer may be made of a p-type semiconductor material, such as 2,2',7,7' -tetrakis [ N, N-bis (4-methoxyphenyl) amino]Organic materials such as-9, 9' -spirobifluorene (spiro-OMeTAD), 3-hexylthiophene (P3HT), polyethylenedioxythiophene-poly (styrenesulfonate) (PEDOT: PSS), or nickel oxide (NiO)x) And the like.
In this embodiment, CsPbBr3Forbidden band width Eg of perovskite light absorption layer 5>2.3eV。
This example is a double-sided inorganic translucent CsPbBr3The thin film perovskite solar cell can meet the requirement that light is irradiated from any surface, and simultaneously adopts the all-metal transparent electrode, so that the utilization rate of solar spectrum short-wave band light is improved, the photoelectric conversion efficiency is improved, and the thin film perovskite solar cell can be used for high-efficiency and low-cost photovoltaic power generation and can be used as siliconThe top cell of the laminated cell is used for improving the power generation efficiency of the silicon solar cell.
Referring to fig. 2, fig. 2 shows a double-sided inorganic semitransparent CsPbBr according to an embodiment of the present invention3The flow schematic diagram of the preparation method of the thin film perovskite solar cell. The preparation method comprises the following steps:
s1, preparing the first optical coupling layer 2 on the transparent substrate 1 by using a thermal evaporation technique.
S2, preparing a first metal transparent electrode 3 on the first optical coupling layer 2 by using a thermal evaporation technique;
s3, depositing and forming a first transmission layer 4 on the first metal transparent electrode 3 by using a solution spin coating method;
s4, CsPbBr was formed on the first transport layer 4 by the two-step solution spin coating method3A perovskite light-absorbing layer 5;
s5 spin coating CsPbBr on glass substrate by solution3A second transmission layer 6 is formed on the perovskite light absorption layer 5 in a deposition mode;
s6, preparing a second metal transparent electrode 7 on the second transmission layer 6 by using a thermal evaporation technology;
s7, preparing the second optical coupling layer 8 on the second metal transparent electrode 7 by using a thermal evaporation technique.
Specifically, the preparation conditions of the first optical coupling layer 2 and the second optical coupling layer 8 are as follows: the growth temperature is 600 ℃, the growth pressure is 1E-4Pa, and the growth rate is
Specifically, the preparation conditions of the first metal transparent electrode 3 and the second metal transparent electrode 7 are as follows: the growth pressure is 1E-4Pa, and the growth rate is
Specifically, step S4 includes:
firstly, spin-coating a perovskite precursor solution on a first transmission layer 4 at the rotating speed of 2000rpm for 30s, and then annealing at 90 ℃ for 30min to prepare a perovskite precursor layer;then spin-coating CsBr solution on the perovskite precursor layer at the rotating speed of 2000rpm for 30s, and then annealing at 250 ℃ for 5min to form a perovskite layer; finally, washing the perovskite layer by using isopropanol solution at the rotating speed of 2000rpm for 30s, and then annealing at 250 ℃ for 5min to form CsPbBr3A perovskite light absorbing layer 5.
The battery of the embodiment adopts all-metal electrodes, can avoid adopting transparent oxide electrodes such as ITO, FTO and the like with high cost and complex process, and has low cost and simple preparation process. The optical coupling layers are prepared on the two sides of the all-metal electrode, so that the surface reflection can be reduced, the light transmittance of the metal electrode is improved, and the sunlight utilization rate is improved. The double-sided solar cell can meet the requirement that light irradiates from any side, the sunlight utilization rate is improved, and the photoelectric conversion efficiency is improved.
Example two
Referring to fig. 2 and 3 on the basis of the first embodiment, fig. 3 shows another double-sided inorganic semitransparent CsPbBr according to the first embodiment of the present invention3The structure of the thin film perovskite solar cell is schematically shown. The cell comprises a transparent substrate 31, a first optical coupling layer 32, a first metal transparent electrode 33, an n-type electron transport layer 34, CsPbBr from bottom to top3Perovskite light absorption layer 35, p-type hole transport layer 36, second metal transparent electrode 37, second optical coupling layer 38.
Wherein, the transparent substrate 31 is made of transparent electronic soda-lime glass, and the first optical coupling layer 32 is made of TeO2The first metal transparent electrode 33 is made of Ag or Au, and the n-type electron transport layer 34 is made of titanium oxide (TiO)2) Or tin oxide (SnO)2) The p-type hole transport layer 36 is made of Spiro-OMeTAD, the second metal transparent electrode 37 is made of Ag or Au, and the second optical coupling layer 38 is made of TeO2。
The preparation method of the battery comprises the following steps:
s1, the first optical coupling layer 32 is prepared on the transparent substrate 31 by using a thermal evaporation technique.
Firstly, the transparent electronic soda-lime glass substrate is respectively cleaned by ultrasonic for 15 minutes by using a detergent, deionized water, acetone and absolute ethyl alcohol in sequence, and then is dried by nitrogen flow.
Then, a layer of TeO with the thickness of 30nm is grown on the cleaned transparent electronic soda-lime glass substrate by a thermal evaporation technology2The preparation conditions are as follows: the growth temperature is 600 ℃, the growth pressure is 1E-4Pa, and the growth rate is
Thereby producing the antireflective layer (i.e., the first optical coupling layer 32).
S2, the first metal transparent electrode 33 is prepared on the first optical coupling layer 32 by using a thermal evaporation technique.
And continuously growing a layer of 9nm Ag or Au on the substrate with the prepared antireflection layer by using a thermal evaporation technology, wherein the preparation conditions are as follows: the growth pressure is 1E-4Pa, and the growth rate is
Thereby obtaining the first metal transparent electrode 33.
S3, the n-type electron transport layer 34 is deposited on the first metal transparent electrode 33 by the solution spin coating method.
Treating the substrate on which the first metal transparent electrode 33 has been prepared with ultraviolet-ozone (UV-ozone) for 15 minutes, and diluting the tin oxide solution with deionized water at a ratio of 1:3 for use; and (3) spin-coating the diluted tin oxide solution on the metal electrode at the rotating speed of 3000rpm for 30s, then annealing at 150 ℃ for 30 minutes, and crystallizing to form a film to form the n-type electron transport layer 34.
S4, CsPbBr was formed on n-type electron transport layer 34 by two-step solution spin coating3A perovskite light absorbing layer 35.
The spin coating of the perovskite precursor solution (PbBr) was continued at 2000rpm on the substrate on which the n-type electron transport layer 34 had been formed2DMF, DMF: dimethylformamide) and spin-coating for 30s, and then annealing at 90 ℃ for 30min to prepare the perovskite precursor layer. And spin-coating CsBr aqueous solution on the perovskite precursor layer at the rotating speed of 2000rpm for 30s, and then annealing at 250 ℃ for 5min to form a perovskite layer. Finally using isopropanol solution at 2000rpWashing the perovskite layer at the rotation speed of m for 30s, and annealing at 250 ℃ for 5min to crystallize the perovskite film to form CsPbBr3A perovskite light absorbing layer 35.
S5 spin coating CsPbBr on glass substrate by solution3A p-type hole transport layer 36 is deposited over the perovskite light absorbing layer 35.
Spin-coating the prepared Spiro-OMeTAD solution on the prepared CsPbBr at the rotation speed of 1000rpm for 5s, and then at the rotation speed of 4000rpm for 40s3On the perovskite light-absorbing layer 35, dried in the shade in a dry nitrogen atmosphere and left to stand for two minutes, and then oxidized for one day to form the p-type hole transport layer 36.
S6, preparing a second metal transparent electrode 37 on the p-type hole transport layer 36 using a thermal evaporation technique.
And continuously growing a layer of 9nm Ag or Au on the substrate with the prepared p-type hole transport layer 36 by using a thermal evaporation technology, wherein the preparation conditions are as follows: the growth pressure is 1E-4Pa, and the growth rate is
Thereby obtaining a second metal transparent electrode 37.
S7, the second optical coupling layer 38 is prepared on the second metal transparent electrode 37 by using a thermal evaporation technique.
A layer of 30nm TeO is grown on the substrate on which the second metal transparent electrode 37 has been prepared by thermal evaporation2The preparation conditions are as follows: the growth temperature is 600 ℃, the growth pressure is 1E-4Pa, and the growth rate is
Thereby producing the antireflective layer (i.e., second optical coupling layer 38).
EXAMPLE III
On the basis of the first embodiment, please refer to fig. 2 and fig. 4, and fig. 4 shows another double-sided inorganic translucent CsPbBr according to the first embodiment of the present invention3The structure of the thin film perovskite solar cell is schematically shown. The cell comprises a transparent substrate 41, a first optical coupling layer 42, a first metal transparent electrode 43, pType hole transport layer 44, CsPbBr3Perovskite light absorption layer 45, n-type electron transport layer 46, second metal transparent electrode 47, second optical coupling layer 48.
Wherein, the transparent substrate 41 is made of transparent electronic soda-lime glass, and the first optical coupling layer 42 is made of TeO2The first metal transparent electrode 43 is made of Ag or Au, and the p-type hole transport layer 44 is made of nickel oxide (NiO)x) The n-type electron transport layer 46 is made of fullerene derivative (PCBM), the second metal transparent electrode 47 is made of Ag or Au, and the second optical coupling layer 48 is made of TeO2。
The preparation method of the battery comprises the following steps:
s1, preparing the first optical coupling layer 42 on the transparent substrate 41 by using a thermal evaporation technique.
Firstly, the transparent electronic soda-lime glass substrate is respectively cleaned by ultrasonic for 15 minutes by using a detergent, deionized water, acetone and absolute ethyl alcohol in sequence, and then is dried by nitrogen flow.
Then, a layer of TeO with the thickness of 30nm is grown on the cleaned transparent electronic soda-lime glass substrate by a thermal evaporation technology2The preparation conditions are as follows: the growth temperature is 600 ℃, the growth pressure is 1E-4Pa, and the growth rate is
Thereby producing the antireflective layer (i.e., the first optical coupling layer 42).
S2, a first metal transparent electrode 43 is prepared on the first optical coupling layer 42 by using a thermal evaporation technique.
And continuously growing a layer of 9nm Ag or Au on the substrate with the prepared antireflection layer by using a thermal evaporation technology, wherein the preparation conditions are as follows: the growth pressure is 1E-4Pa, and the growth rate is
Thereby obtaining the first metal transparent electrode 43.
S3, the p-type hole transport layer 44 is deposited on the first metal transparent electrode 43 by a solution spin coating method.
The substrate on which the first metal transparent electrode 43 has been prepared is treated with ultraviolet-ozone (UV-ozone) for 15 minutes, a nickel oxide solution prepared in advance is spin-coated on the metal electrode at 3000rpm for 30 seconds, and then annealed at 250 ℃ for 45 minutes to form a film, thereby forming the p-type hole transport layer 44.
S4, CsPbBr was formed on the p-type hole transport layer 44 by two-step solution spin coating3A perovskite light absorbing layer 45.
The spin coating of the perovskite precursor solution (PbBr) was continued at 2000rpm on the substrate already prepared to form the p-type hole transport layer 442DMF solution) for 30s, followed by annealing at 90 ℃ for 30min to prepare a perovskite precursor layer. And spin-coating CsBr aqueous solution on the perovskite precursor layer at the rotating speed of 2000rpm for 30s, and then annealing at 250 ℃ for 5min to form a perovskite layer. Finally washing the perovskite layer by using isopropanol solution at the rotating speed of 2000rpm for 30s, and then annealing at 250 ℃ for 5min to crystallize the perovskite film to form CsPbBr3A perovskite light absorbing layer 45.
S5 spin coating CsPbBr on glass substrate by solution3An n-type electron transport layer 46 is deposited over the perovskite light absorbing layer 45.
The prepared PCBM solution was spin-coated onto the prepared CsPbBr at 2000rpm3The substrate of the perovskite light absorption layer 45 was spin-coated for 30 seconds, and left to stand for two minutes in a dry nitrogen atmosphere to obtain an n-type electron transport layer 46.
S6, preparing a second metal transparent electrode 47 on the n-type electron transport layer 46 by using a thermal evaporation technique.
On the substrate on which the n-type electron transport layer 46 has been prepared, a layer of 9nm Ag or Au is grown by the thermal evaporation technique, under the following conditions: the growth pressure is 1E-4Pa, and the growth rate is
Thereby obtaining the second metal transparent electrode 47.
S7, the second optical coupling layer 48 is prepared on the second metal transparent electrode 47 by using a thermal evaporation technique.
After the second metal transparent electrode is prepared47A layer of TeO with the thickness of 30nm is grown on the substrate by a thermal evaporation technology2The preparation conditions are as follows: the growth temperature is 600 ℃, the growth pressure is 1E-4Pa, and the growth rate is
Thereby producing the antireflective layer (i.e., second optical coupling layer 48).
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.
Claims (10)
1. Double-sided inorganic semitransparent CsPbBr3The thin film perovskite solar cell is characterized by comprising a transparent substrate, and a first optical coupling layer, a first metal transparent electrode, a first transmission layer and CsPbBr which are sequentially stacked on the transparent substrate3The light-absorbing layer comprises a perovskite light-absorbing layer, a second transmission layer, a second metal transparent electrode and a second optical coupling layer.
2. The double-sided inorganic translucent CsPbBr of claim 13The thin film perovskite solar cell is characterized in that the light transmittance of the transparent substrate is greater than or equal to 80%, and the material of the transparent substrate comprises any one of glass, double-polished sapphire and PET flexible materials.
3. The double-sided inorganic translucent CsPbBr of claim 13The thin film perovskite solar cell is characterized in that the refractive index of the first optical coupling layer and the refractive index of the second optical coupling layer are both greater than or equal to 2, and the materials both comprise MoO3、V2O5、TeO2、Al2O3、LiF、MgF2、SiO2Any one of the above-mentioned materials has a thickness of 25 to 35 nm.
4. The double-sided inorganic translucent CsPbBr of claim 13The thin film perovskite solar cell is characterized in that the light transmittance of the first metal transparent electrode and the light transmittance of the second metal transparent electrode are both greater than or equal to 80%, the thicknesses of the first metal transparent electrode and the second metal transparent electrode are both 9-12 nm, and the first metal transparent electrode and the second metal transparent electrode are made of any one of Au and Ag.
5. The double-sided inorganic translucent CsPbBr of claim 13The thin film perovskite solar cell is characterized in that the first transmission layer comprises one of an electron transmission layer and a hole transmission layer, and the second transmission layer comprises the other of the electron transmission layer and the hole transmission layer.
6. The double-sided inorganic translucent CsPbBr of claim 53The thin film perovskite solar cell is characterized in that the material of the electron transport layer is an n-type semiconductor material, and the n-type semiconductor material comprises TiO2、SnO2Any one of ZnO and PCBM;
the material of the hole transport layer adopts a P-type semiconductor material, and the P-type semiconductor material comprises spiro-OMeTAD, P3HT, PEDOT: PSS, NiOxAny one of the above.
7. Double-sided inorganic semitransparent CsPbBr3The preparation method of the thin film perovskite solar cell is characterized by comprising the following steps:
s1, preparing a first optical coupling layer on the transparent substrate by using a thermal evaporation technology;
s2, preparing a first metal transparent electrode on the first optical coupling layer by using a thermal evaporation technology;
s3, depositing a first transmission layer on the first metal transparent electrode by using a solution spin coating method;
s4, forming CsPbBr on the first transmission layer by using two-step solution spin coating method3A perovskite light-absorbing layer;
s5 spin coating CsPbBr on the substrate by solution3Depositing a second transmission layer on the perovskite light absorption layer;
s6, preparing a second metal transparent electrode on the second transmission layer by using a thermal evaporation technology;
and S7, preparing a second optical coupling layer on the second metal transparent electrode by using a thermal evaporation technology.
8. The double-sided inorganic translucent CsPbBr of claim 73The preparation method of the thin film perovskite solar cell is characterized in that the preparation conditions of the first optical coupling layer and the second optical coupling layer are as follows: the growth temperature is 600 ℃, the growth pressure is 1E-4Pa, and the growth rate is
9. The double-sided inorganic translucent CsPbBr of claim 73The preparation method of the thin film perovskite solar cell is characterized in that the preparation conditions of the first metal transparent electrode and the second metal transparent electrode are as follows: the growth pressure is 1E-4Pa, and the growth rate is
10. The double-sided inorganic translucent CsPbBr of claim 73The preparation method of the thin film perovskite solar cell is characterized in that the step S4 comprises the following steps:
spin-coating a perovskite precursor solution on the first transmission layer at the rotating speed of 2000rpm for 30s, and then annealing at 90 ℃ for 30min to prepare a perovskite precursor layer;
spin-coating CsBr solution on the perovskite precursor layer at the rotating speed of 2000rpm for 30s, and then annealing at 250 ℃ for 5min to form a perovskite layer;
the perovskite layer was washed with an isopropanol solution at 2000rpm for 30s and then annealed at 250 ℃ 5min, forming the CsPbBr3A perovskite light absorbing layer.
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| CN206148472U (en) * | 2016-09-21 | 2017-05-03 | 中国科学院重庆绿色智能技术研究院 | Perovskite solar cell based on super thin metal transparent electrode |
| WO2019139945A1 (en) * | 2018-01-09 | 2019-07-18 | Board Of Trustees Of Michigan State University | Uv harvesting transparent photovoltaics |
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| CN206148472U (en) * | 2016-09-21 | 2017-05-03 | 中国科学院重庆绿色智能技术研究院 | Perovskite solar cell based on super thin metal transparent electrode |
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