CN113877787B - Photonic crystal infrared stealth material and preparation method thereof - Google Patents
Photonic crystal infrared stealth material and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a photonic crystal infrared stealth material and a preparation method thereof, which belong to the technical field of stealth materials. The infrared stealth performance of the material is little influenced by the angle of incident light, and the stealth effect of infrared detection wave bands (3-5 mu m and 8-12 mu m) and the radiation heat dissipation performance of other wave bands can be realized by adjusting the types and the sizes of substances of assembly primitives, and meanwhile, the infrared stealth material is compatible with radar stealth of 2-18 GHz wave bands.
Description
Technical Field
The invention belongs to the technical field of stealth materials, and particularly relates to a photonic crystal infrared stealth material and a preparation method thereof.
Background
The infrared stealth material changes the infrared radiation characteristic of the infrared stealth material by reducing the emissivity of the infrared stealth material in the infrared band, so that the infrared detection equipment is difficult to find to achieve the stealth purpose. The traditional infrared stealth material mainly comprises a binder and a low-emission filler, wherein the binder mainly comprises organic silicon, acrylic acid, epoxy and other resins, and the low-emission filler comprises metal aluminum powder, indium tin oxide, zinc aluminum oxide and the like. However, the infrared stealth coating reduces the surface infrared radiation, and simultaneously increases the reflection of visible light and microwaves, which is not beneficial to radar stealth. In addition, the traditional infrared stealth coating also has a series of difficult problems such as poor temperature resistance, radiant heat dissipation resistance and the like, and has a great gap between the performance and the application requirement, so that a new system and a new concept infrared stealth material are urgently required to be explored and developed.
The photonic crystal is formed by periodically arranging dielectric materials in space, and is basically characterized by having a photon forbidden band, incident light in the forbidden band range is totally reflected and cannot penetrate the photonic crystal, and spontaneous radiation of the band is also inhibited. By utilizing the characteristics, the infrared light in a specific wave band can be inhibited and modulated, so that the infrared radiation in the wave band is eliminated or weakened, and infrared stealth is realized without affecting radiation heat dissipation and radar stealth in other wave bands. The Chinese patent application CN201610007338.9 proposes to prepare the Ge/ZnSe photonic crystal film by a magnetron sputtering method to realize infrared stealth of a target wave band, but the method has certain application limitation because the operation process is complex, the equipment cost is high and large-area preparation cannot be realized. Chinese patent application CN202011125743.3 discloses a multiband stealth garment based on photonic crystal thin film material, which has a photonic crystal infrared stealth layer (Te/CaF 2 ) The film is prepared by a vacuum evaporation film plating method, however, the method can only prepare the one-dimensional photonic crystal with stacked films, and the infrared emissivity of the one-dimensional photonic crystal has large dependence on the angle of incident light, so that the infrared stealth effect of the one-dimensional photonic crystal is reduced. The Chinese patent application CN105585664A proposes a method for preparing a three-dimensional photonic crystal on the surface of a substrate, but the material selection limitation is large, only the infrared transmittance of the photonic crystal is tested, and the infrared reflectance, the emissivity and the radar wave transmittance which are closely related to stealth are not further studied.
Based on the above problems, there is an urgent need to provide a novel photonic crystal infrared stealth material with simple preparation, good infrared stealth performance, small incident light angle dependence, and compatibility of radiation heat dissipation and radar stealth, and a preparation method thereof.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a three-dimensional photonic crystal infrared stealth material which is simple to prepare, has the characteristic of spectrum selective emission, and is compatible with radiation heat dissipation and radar stealth, and a preparation method thereof. The method is realized by adopting a colloid self-assembly strategy, has low cost and short period, can be used for large-area rapid preparation, and effectively avoids the use of complex equipment required by a vacuum evaporation method, a magnetron sputtering method and the like. Compared with the one-dimensional photonic crystal material prepared by the existing method, the infrared stealth material prepared by the method has the advantages that the infrared stealth performance is little influenced by the angle of incident light, the stealth effect of infrared detection wave bands (3-5 mu m and 8-12 mu m) and the radiation heat dissipation performance of other wave bands can be realized by adjusting the types and the sizes of substances of assembly primitives, and meanwhile, the infrared stealth material is compatible with radar stealth of 2-18 GHz wave bands.
The invention provides a preparation method of a photonic crystal infrared stealth material, which comprises the following steps:
(1) Hydrophilic treatment of a substrate: soaking the substrate sheet in piranha solution, taking out, sequentially flushing with deionized water and absolute ethyl alcohol, and drying with nitrogen to obtain a hydrophilized substrate;
(2) Preparing a colloidal microsphere dispersion liquid: adding colloidal microspheres with different sizes and particle diameters within 1-6 mu m into a dispersion solvent for ultrasonic treatment to obtain a uniformly dispersed colloidal microsphere dispersion;
(3) Colloid self-assembly process: depositing the colloidal microsphere dispersion liquid on the surface of the substrate subjected to hydrophilic treatment, and placing the substrate in a constant temperature and humidity box for volatilizing a solvent to complete the self-assembly process of the colloid to obtain a colloidal crystal;
(4) The heat treatment process comprises the following steps: the colloid crystal is firstly aged and dried for 10 to 24 hours at the temperature of 80 to 120 ℃ and then is subjected to heat treatment at more than two different temperature stages, so that the three-dimensional photonic crystal infrared stealth material is prepared.
Preferably, the base sheet is a glass sheet or a silicon sheet.
Preferably, the piranha solution in the step (1) is a mixed solution of concentrated sulfuric acid and hydrogen peroxide in a volume ratio of 2:1-4:1, wherein the concentration of the concentrated sulfuric acid is more than or equal to 98%, and the concentration of the hydrogen peroxide is 20-35%.
Preferably, the substrate material is placed in piranha solution for soaking for 3-12 hours, and the soaking temperature is 40-80 ℃.
Preferably, the colloidal microspheres in the step (2) comprise inorganic microspheres and polymer microspheres, wherein the inorganic microspheres are selected from one of silicon dioxide, titanium dioxide and aluminum oxide, and the polymer microspheres are selected from one of polystyrene and polymethyl methacrylate.
Preferably, the colloidal microspheres in the step (2) are added into a dispersion solvent for ultrasonic treatment for 2-4 hours, and the variation of the particle size of the colloidal microspheres with each size is required to be less than or equal to 5 percent.
Preferably, the dispersing solvent in the step (2) is one or more selected from deionized water, ethanol, glycol, acetone and dibromomethane, and the concentration of the colloidal microspheres in the dispersing solvent is 0.1-20%.
Preferably, the method for depositing the colloidal microsphere dispersion in the step (3) on the surface of the substrate after the hydrophilic treatment is either one of the following two methods:
drop coating deposition method: dispersing 0.2-1 mL of colloidal microspheres on the surface of a substrate after hydrophilic treatment, and placing the substrate in a constant temperature and humidity box until the dispersing agent volatilizes to be one-time dripping; then continuously dripping the coating on the dried coating after one-time dripping, repeatedly dripping for 2-5 times, and finally obtaining the coating with the thickness of 5-30 mu m;
vertical deposition method: vertically immersing the substrate subjected to hydrophilic treatment into 10-60 mL of colloidal microsphere dispersion liquid, and placing the substrate in a constant temperature and humidity box until the dispersing agent volatilizes to be vertically deposited for one time; and then vertically depositing on the dried coating after the first vertical deposition for 5-10 times repeatedly, wherein the thickness of the final coating is 5-30 mu m.
Preferably, the temperature of the constant temperature and humidity box in the step (3) is set to be 40-80 ℃ and the humidity is set to be 40-90%.
Preferably, the heat treatment performed in the step (4) in more than two different temperature stages comprises a first temperature stage heat treatment and a second temperature stage heat treatment, or comprises a first temperature stage heat treatment, a second temperature stage heat treatment and a third temperature stage heat treatment; wherein the temperature of the heat treatment in the first temperature stage is 200-400 ℃ and the time is 0.5-12 h; the temperature of the heat treatment in the second temperature stage is 400-600 ℃ and the time is 0.2-5 h; the temperature of the heat treatment in the third temperature stage is 600-1000 ℃ and the time is 0.1-3 h.
The invention also provides the photonic crystal infrared stealth material prepared by the method.
Compared with the prior art, the invention has the following beneficial effects:
(1) The method is different from other one-dimensional photonic crystal infrared stealth materials prepared by a vacuum evaporation method, a magnetron sputtering method and other complex modes, and utilizes a simple colloid self-assembly method to directly deposit monodisperse colloid microspheres on a substrate to construct a three-dimensional ordered photonic crystal structure, so that the infrared stealth material with small incident light angle dependence is prepared.
(2) The size of the colloid microsphere adopted by the invention is preferably 1-6 mu m, and the emissivity of the prepared three-dimensional photonic crystal material in an infrared detection wave band (3-5 mu m and 8-12 mu m) is less than 0.2, so that infrared stealth is realized; emissivity is larger than 0.8 in a non-infrared detection wave band, so that radiation heat dissipation is realized; the transmittance is more than 90% in the radar detection wave band (2-18 GHz), so that the radar stealth can be effectively compatible.
(3) The multi-temperature-section heat treatment method adopted by the invention can realize the maintenance of the ordered structure of the photonic crystal, especially the treatment of inorganic microspheres, and avoids the phenomenon of structural collapse in the high-temperature process.
Drawings
FIG. 1 is a flow chart of the preparation of a photonic crystal infrared stealth material of the present invention.
Fig. 2 is a schematic structural diagram of a photonic crystal infrared stealth material obtained in example 1 of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be clearly and completely described below in connection with the embodiments of the present invention.
Example 1
(1) Hydrophilic treatment of a substrate: firstly preparing piranha solution, slowly dropwise adding 98% concentrated sulfuric acid into 30% hydrogen peroxide under the condition of rapid stirring, wherein the volume ratio is 7:3; after the solution is uniformly dispersed, placing the cut 25X 25mm monocrystalline silicon wafer in piranha solution for treatment at 60 ℃ for 8 hours, then respectively flushing with deionized water and absolute ethyl alcohol, and finally drying with nitrogen for standby.
(2) Preparing a colloidal microsphere dispersion liquid: and dispersing a proper amount of 2 mu m silicon dioxide colloid microspheres (the particle size change is less than or equal to 5%) in absolute ethyl alcohol, carrying out ultrasonic treatment for 2 hours to obtain a uniformly mixed silicon dioxide colloid microsphere dispersion liquid, wherein the concentration is 0.4%.
(3) Colloid self-assembly process: and (3) dripping 0.5mL of silica colloid microsphere dispersion liquid on the surface of the silicon wafer subjected to hydrophilic treatment, drying in a constant temperature and humidity box with the temperature of 50 ℃ and the humidity of 80%, continuously dripping on a dry coating after ethanol volatilizes, repeatedly dripping for 3 times, and finally obtaining the coating with the thickness of 10 mu m.
(4) The heat treatment process comprises the following steps: and (3) ageing and drying the colloidal crystal coating prepared in the step (3) at 100 ℃ for 10 hours, and then performing heat treatment at three different temperature stages, wherein the temperature of the first temperature stage is 200 ℃ for 0.5 hours, the temperature of the second temperature stage is 400 ℃ for 0.5 hours, and the temperature of the third temperature stage is 800 ℃ for 1 hour, so that the three-dimensional photonic crystal infrared stealth material is finally prepared.
The three-dimensional photonic crystal material prepared by the embodiment has the emissivity of 0.18 at the infrared detection wave band of 3-5 mu m, the emissivity of 0.85 at the other wave bands of 5-25 mu m, and the wave transmission rate of 2-18 GHz of the radar detection wave band of 96%.
Example 2
(1) Hydrophilic treatment of a substrate: firstly preparing piranha solution, slowly dropwise adding 98% concentrated sulfuric acid into 30% hydrogen peroxide under the condition of rapid stirring, wherein the volume ratio is 7:3; after the solution is uniformly dispersed, placing the cut 25X 25mm monocrystalline silicon wafer in piranha solution for treatment at 60 ℃ for 8 hours, then respectively flushing with deionized water and absolute ethyl alcohol, and finally drying with nitrogen for standby.
(2) Preparing a colloidal microsphere dispersion liquid: and dispersing a proper amount of 4.5 mu m silicon dioxide colloid microspheres (the particle size change is less than or equal to 5%) in a mixed solution of dibromomethane and absolute ethyl alcohol (the volume ratio is 3:1), and carrying out ultrasonic treatment for 2 hours to obtain a uniformly mixed silicon dioxide colloid microsphere dispersion liquid.
(3) Colloid self-assembly process: and vertically immersing the hydrophilized silicon wafer into 15mL of colloidal microsphere dispersion liquid, drying in a constant temperature and humidity box with the temperature of 50 ℃ and the humidity of 80%, continuously vertically depositing on the dried coating layer in the same step after the solvent volatilizes, repeatedly depositing for 7 times, and finally obtaining the coating layer with the thickness of 20 mu m.
(4) The heat treatment process comprises the following steps: and (3) ageing and drying the colloidal crystal coating prepared in the step (3) at 100 ℃ for 10 hours, then performing heat treatment at three different temperature stages, wherein the temperature of the first temperature stage is 200 ℃ for 0.5 hours, the temperature of the second temperature stage is 400 ℃ for 0.2 hours, and the temperature of the third temperature stage is 1000 ℃ for 0.1 hour, and finally preparing the three-dimensional photonic crystal infrared stealth material.
The three-dimensional photonic crystal material prepared by the embodiment has the emissivity of 0.16 at the infrared detection wave band of 8-12 mu m, the emissivity of 0.87 at other wave bands of 3-8 and 8-25 mu m, and the wave transmission rate of 2-18 GHz of the radar detection wave band of 95%.
Example 3
(1) Hydrophilic treatment of a substrate: firstly preparing piranha solution, and slowly dropwise adding concentrated sulfuric acid into 30% hydrogen peroxide under the condition of rapid stirring, wherein the volume ratio is 7:3; after the solution is uniformly dispersed, placing the cut 25X 25mm glass sheet in piranha solution for treatment at 60 ℃ for 8 hours, then respectively flushing with deionized water and absolute ethyl alcohol, and finally drying with nitrogen for standby.
(2) Preparing a colloidal microsphere dispersion liquid: and dispersing a proper amount of polystyrene colloid microspheres (the particle size change is less than or equal to 5%) with the concentration of 0.3% in a mixed solution (volume ratio of 2:1) of deionized water and ethanol, and carrying out ultrasonic treatment for 2 hours to obtain a uniformly mixed polystyrene colloid microsphere dispersion liquid.
(3) Colloid self-assembly process: and (3) dripping 0.2mL of polystyrene colloid microsphere dispersion liquid on the surface of a glass sheet subjected to hydrophilic treatment, drying in a constant temperature and humidity box with the temperature of 70 ℃ and the humidity of 80%, continuously dripping on a dry coating after the solvent is volatilized, repeatedly dripping for 2 times, and finally obtaining the coating with the thickness of 5 mu m.
(4) The heat treatment process comprises the following steps: and (3) ageing and drying the colloidal crystal prepared in the step (3) at 100 ℃ for 10 hours, then performing heat treatment at two different temperature stages, wherein the temperature of the first temperature stage is 300 ℃ for 12 hours, and the temperature of the second temperature stage is 600 ℃ for 5 hours, and finally preparing the three-dimensional photonic crystal infrared stealth material.
The three-dimensional photonic crystal material prepared by the embodiment has the emissivity of 0.14 at the infrared detection wave band of 3-5 mu m, the emissivity of 0.88 at the other wave bands of 5-25 mu m, and the wave transmittance of 2-18 GHz of the radar detection wave band of 91%.
Example 4
Exactly the same as in steps (1), (2) and (4) of example 3, except for step (3): colloid self-assembly process: and (3) dripping 1mL of polystyrene colloid microsphere dispersion liquid on the surface of a glass sheet subjected to hydrophilic treatment, drying in a constant temperature and humidity box with the temperature of 70 ℃ and the humidity of 80%, continuously dripping on a dry coating after the solvent volatilizes, repeatedly dripping for 5 times, and finally obtaining the coating with the thickness of 30 mu m.
The three-dimensional photonic crystal material prepared by the embodiment has the emissivity of 0.11 at the infrared detection wave band of 3-5 mu m, the emissivity of 0.86 at the other wave bands of 5-25 mu m, and the wave transmission rate of 2-18 GHz of the radar detection wave band of 90%.
Example 5
(1) Hydrophilic treatment of a substrate: firstly preparing piranha solution, and slowly dropwise adding concentrated sulfuric acid into 20% hydrogen peroxide under the condition of rapid stirring, wherein the volume ratio is 2:1; after the solution is uniformly dispersed, placing the cut 25X 25mm glass sheet in piranha solution for treatment for 12 hours at 40 ℃, then respectively flushing with deionized water and absolute ethyl alcohol, and finally drying with nitrogen for standby.
(2) Preparing a colloidal microsphere dispersion liquid: and dispersing a proper amount of polystyrene colloid microspheres (the particle size change is less than or equal to 5%) with the concentration of 20% in a mixed solution of deionized water and ethanol (the volume ratio is 4:1), and carrying out ultrasonic treatment for 4 hours to obtain a uniformly mixed polystyrene colloid microsphere dispersion liquid.
(3) Colloid self-assembly process: the glass sheet after hydrophilic treatment is vertically immersed into 10mL of colloidal microsphere dispersion liquid, and is placed into a constant temperature and humidity box with the temperature of 80 ℃ and the humidity of 90 percent for drying treatment, and after the solvent volatilizes, the glass sheet is continuously vertically deposited on a dry coating layer by the same steps, and is repeatedly deposited for 5 times, wherein the thickness of the final coating layer is 5 mu m.
(4) The heat treatment process comprises the following steps: and (3) ageing and drying the colloidal crystal prepared in the step (3) at 120 ℃ for 12 hours, and then performing heat treatment at two different temperature stages, wherein the temperature of the first temperature stage is 400 ℃ for 8 hours, and the temperature of the second temperature stage is 500 ℃ for 3 hours, so that the three-dimensional photonic crystal infrared stealth material is prepared.
The three-dimensional photonic crystal material prepared by the embodiment has the emissivity of 0.19 at the infrared detection wave band of 8-12 mu m, the emissivity of 0.82 at the other wave bands of 3-8 mu m, and the wave transmittance of 2-18 GHz of the radar detection wave band of 91%.
Example 6
(1) Hydrophilic treatment of a substrate: firstly preparing piranha solution, and slowly dropwise adding concentrated sulfuric acid into 35% hydrogen peroxide under the condition of rapid stirring, wherein the volume ratio is 4:1; after the solution is uniformly dispersed, placing the cut 25X 25mm monocrystalline silicon wafer in piranha solution for 3 hours at 80 ℃, then respectively flushing with deionized water and absolute ethyl alcohol, and finally drying with nitrogen for standby.
(2) Preparing a colloidal microsphere dispersion liquid: and dispersing a proper amount of 1 mu m silicon dioxide colloid microspheres (the particle size change is less than or equal to 5%) in absolute ethyl alcohol, carrying out ultrasonic treatment for 3 hours to obtain a uniformly mixed silicon dioxide colloid microsphere dispersion liquid A, wherein the concentration is 0.1%. And dispersing a proper amount of 4.5 mu m silicon dioxide colloid microspheres (the particle size change is less than or equal to 5%) in a mixed solution of dibromomethane and absolute ethyl alcohol (the volume ratio is 3:1), and carrying out ultrasonic treatment for 2 hours to obtain a uniformly mixed silicon dioxide colloid microsphere dispersion liquid B.
(3) Colloid self-assembly process: vertically immersing the silicon wafer subjected to hydrophilic treatment into 15mL of silicon dioxide colloid microsphere dispersion liquid A, drying in a constant temperature and humidity box with the temperature of 40 ℃ and the humidity of 40%, continuously vertically depositing on a dry coating layer in the same step after the solvent is volatilized, and repeatedly depositing for 3 times; subsequently, the silicon wafer was immersed in 15mL of the silica gel microsphere dispersion B, and dried in a constant temperature and humidity oven at 50℃and 80% humidity, and the deposition was repeated 10 times, with a final coating thickness of 30. Mu.m.
(4) The heat treatment process comprises the following steps: and (3) ageing and drying the colloidal crystal coating prepared in the step (3) at 80 ℃ for 24 hours, and then performing heat treatment at three different temperature stages, wherein the temperature of the first temperature stage is 200 ℃ for 1 hour, the temperature of the second temperature stage is 400 ℃ for 1 hour, and the temperature of the third temperature stage is 600 ℃ for 3 hours, so that the three-dimensional photonic crystal infrared stealth material is prepared.
The three-dimensional photonic crystal material prepared by the embodiment has the emissivity of 0.17 in the infrared detection wave bands of 3-5 and 8-12 mu m, the emissivity of 0.85 in other wave bands of 5-8 and 12-25 mu m, and the wave transmission rate of 2-18 GHz in the radar detection wave band of 95%.
Comparative example
(1) Hydrophilic treatment of a substrate: firstly preparing piranha solution, and slowly dropwise adding concentrated sulfuric acid into 35% hydrogen peroxide under the condition of rapid stirring, wherein the volume ratio is 4:1; after the solution is uniformly dispersed, placing the cut 25X 25mm glass sheet into piranha solution for treatment for 3 hours at 80 ℃, then respectively flushing with deionized water and absolute ethyl alcohol, and finally drying with nitrogen for standby.
(2) Preparing a low emissivity coating: and mixing a proper amount of aluminum powder (200 meshes) with phenolic resin, wherein the concentration is 15%, and carrying out ultrasonic treatment for 3 hours to obtain the uniformly mixed low-emissivity coating.
(3) The preparation process of the coating comprises the following steps: ethanol is taken as a diluent, and after being fully ground, the glass sheet is brushed on the hydrophilic treated glass sheet, and the glass sheet is placed in a constant temperature and humidity box with the temperature of 60 ℃ and the humidity of 40% for drying treatment for 12 hours.
The low-emissivity coating prepared by the embodiment has the emissivity of 0.72 in the infrared detection wave band of 2.5-25 mu m and the wave transmittance of 15% in the radar detection wave band of 2-18 GHz.
As can be seen from the comparison of the above examples and the comparative examples, the three-dimensional photonic crystal material prepared by the invention has the emissivity smaller than 0.2 in the infrared detection wave band (3-5 μm and 8-12 μm), can realize infrared stealth, and has much smaller emissivity and better stealth effect compared with the emissivity of 0.72 of the comparative examples; the emissivity is larger than 0.8 in the non-infrared detection wave band, so that radiation and heat dissipation can be realized, and compared with the emissivity of 0.72 in the comparative example, the radiation effect is better; the transmittance is more than 90% in the radar detection wave band (2-18 GHz), is far more than 15% of the contrast ratio, and can be better and effectively compatible with radar stealth.
Although the present invention has been described with reference to the above embodiments, it should be understood that the invention is not limited thereto, and that modifications and equivalents may be made thereto by those skilled in the art, which modifications and equivalents are intended to be included within the scope of the present invention as defined by the appended claims.
Claims (7)
1. The preparation method of the photonic crystal infrared stealth material is characterized by comprising the following steps of:
(1) A substrate hydrophilic treatment step: soaking the substrate sheet in piranha solution, taking out, sequentially flushing with deionized water and absolute ethyl alcohol, and drying with nitrogen to obtain a hydrophilized substrate;
(2) The preparation method of the colloidal microsphere dispersion liquid comprises the following steps: adding colloidal microspheres with different sizes and particle diameters of 1-6 mu m into a dispersion solvent for ultrasonic treatment to obtain a uniformly dispersed colloidal microsphere dispersion; the colloid microsphere is inorganic microsphere and/or polymer microsphere, the inorganic microsphere is selected from one of silicon dioxide, titanium dioxide and aluminum oxide, and the polymer microsphere is selected from one of polystyrene and polymethyl methacrylate; the dispersion solvent comprises dibromomethane and one or more of deionized water, ethanol, glycol and acetone;
(3) Colloid self-assembly process steps: depositing the colloidal microsphere dispersion liquid on the surface of the substrate subjected to hydrophilic treatment by adopting a drop coating deposition method, and placing the substrate in a constant temperature and humidity box for solvent volatilization to complete a colloidal self-assembly process so as to obtain colloidal crystals; the dropping deposition method comprises the following steps: taking 0.2-1 mL of colloidal microsphere dispersion liquid drop on the surface of the substrate after hydrophilic treatment, and placing the substrate in a constant temperature and humidity box until the dispersing agent volatilizes to be one-time dripping; continuously dripping the coating on the dried coating after one-time dripping, repeatedly dripping for 2-5 times, wherein the thickness of the final coating is 5-30 mu m;
(4) The heat treatment process comprises the steps of: aging and drying the colloid crystal at 80-120 ℃ for 10-24 hours, and then performing heat treatment at more than two different temperature stages to obtain the three-dimensional photonic crystal infrared stealth material; the heat treatment of the two or more different temperature stages comprises a first temperature stage heat treatment and a second temperature stage heat treatment, or comprises a first temperature stage heat treatment, a second temperature stage heat treatment and a third temperature stage heat treatment; wherein the temperature of the heat treatment in the first temperature stage is 200-400 ℃ and the time is 0.5-12 h; the temperature of the heat treatment in the second temperature stage is 400-600 ℃ and the time is 0.2-5 h; the temperature of the heat treatment in the third temperature stage is 600-1000 ℃ and the time is 0.1-3 h.
2. The method of claim 1, wherein the piranha solution in the step (1) is a mixed solution of concentrated sulfuric acid and hydrogen peroxide in a volume ratio of 2:1-4:1, wherein the concentration of the concentrated sulfuric acid is more than or equal to 98%, and the concentration of the hydrogen peroxide is 20-35%.
3. The method of claim 1, wherein the substrate sheet of step (1) is a glass sheet or a silicon sheet; and (3) soaking the substrate material in piranha solution for 3-12 hours at a temperature of 40-80 ℃.
4. The method of claim 1, wherein the colloidal microspheres of step (2) are added to a dispersion solvent and sonicated for 2-4 hours, wherein the monodispersity of each size of colloidal microspheres is required to vary in particle size by less than or equal to 5%.
5. The method of claim 1, wherein the colloidal microspheres are present in the dispersing solvent at a concentration of 0.1% to 20%.
6. The method of claim 1, wherein the temperature of the constant temperature and humidity cabinet in the step (3) is set to 40-80 ℃ and the humidity is set to 40-90%.
7. A photonic crystal infrared stealth material prepared by the method of any one of claims 1-6.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110948788.9A CN113877787B (en) | 2021-08-18 | 2021-08-18 | Photonic crystal infrared stealth material and preparation method thereof |
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| CN202110948788.9A CN113877787B (en) | 2021-08-18 | 2021-08-18 | Photonic crystal infrared stealth material and preparation method thereof |
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