CN113872544A - Method for preparing micromechanical resonator - Google Patents
Method for preparing micromechanical resonator Download PDFInfo
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- CN113872544A CN113872544A CN202111184437.1A CN202111184437A CN113872544A CN 113872544 A CN113872544 A CN 113872544A CN 202111184437 A CN202111184437 A CN 202111184437A CN 113872544 A CN113872544 A CN 113872544A
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- 238000000034 method Methods 0.000 title claims abstract description 18
- 238000004806 packaging method and process Methods 0.000 claims abstract description 62
- 239000000758 substrate Substances 0.000 claims abstract description 59
- 238000000059 patterning Methods 0.000 claims abstract description 25
- 238000000151 deposition Methods 0.000 claims abstract description 21
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 21
- 238000002360 preparation method Methods 0.000 claims abstract description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 73
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 70
- 239000010703 silicon Substances 0.000 claims description 70
- 238000004519 manufacturing process Methods 0.000 claims description 18
- 229920005591 polysilicon Polymers 0.000 claims description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 7
- 239000011810 insulating material Substances 0.000 claims description 7
- 238000002955 isolation Methods 0.000 claims description 7
- 230000008054 signal transmission Effects 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- 229910052681 coesite Inorganic materials 0.000 claims description 6
- 229910052906 cristobalite Inorganic materials 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 229910052682 stishovite Inorganic materials 0.000 claims description 6
- 229910052905 tridymite Inorganic materials 0.000 claims description 6
- 238000003466 welding Methods 0.000 claims description 6
- 238000000227 grinding Methods 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 238000011049 filling Methods 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 238000003384 imaging method Methods 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 238000005538 encapsulation Methods 0.000 claims 4
- 230000008569 process Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 46
- 238000005516 engineering process Methods 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 239000001963 growth medium Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000009461 vacuum packaging Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/0072—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
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Abstract
The invention provides a preparation method of a micromechanical resonator, which comprises the following steps: obtaining a substrate structure, wherein a resonance part and two electrode parts which are positioned at two sides of the resonance part and are arranged at intervals are formed on the substrate structure; growing a sacrificial layer on the substrate structure and patterning the sacrificial layer to partially expose the resonance part and the two electrode parts; depositing and patterning first polycrystalline silicon, and forming a resonance structure, an input electrode and an output electrode corresponding to the resonance part and the two electrode parts, wherein capacitance gaps are formed between the input electrode and the resonance structure and between the output electrode and the resonance structure; releasing the sacrificial layer under the resonance structure to obtain a resonator wafer; and preparing a packaging cover plate, and bonding the packaging cover plate and the resonator wafer in a vacuum mode to form the MEMS resonator. The vacuum airtightness is ensured, the whole process flow is simple and reliable, and high-precision, high-quality, large-batch and low-cost preparation can be realized.
Description
Technical Field
The invention relates to the technical field of micro-electro-mechanical systems, in particular to a preparation method of a micro-mechanical resonator.
Background
The high-precision resonator product mainly faces to the markets of high-performance and portable intelligent terminals such as 5G intelligent terminals, tablet computers and wearable equipment. With the development of advanced manufacturing technology, the volume of electronic products is continuously reduced, and electronic components are required to be continuously miniaturized. The micromechanical resonator has the advantages of small volume, high Q value, easy integration with an IC (integrated circuit), low power consumption, high reliability and the like, is suitable for the development requirement of the modern wireless communication technology, is already put into practical production from a laboratory, and plays an indispensable role in various aspects of national economy, including communication, aerospace technology, traffic technology, biomedical field and national defense industry. Therefore, the demand for micromechanical resonators is increasing.
However, the manufacturing technology of the micro-mechanical resonator cannot meet the requirement of large-scale industrial manufacturing of high-end devices, and engineering problems such as manufacturing process consistency, yield, vacuum packaging method and cost are urgently needed to be broken through, and development of a simple, high-reliability and high-yield low-cost manufacturing method of the MEMS resonator is urgently needed.
Disclosure of Invention
The invention mainly aims to provide a preparation method of a micromechanical resonator, aiming at solving the technical problem that the micromechanical resonator is difficult to manufacture.
In order to achieve the above object, the present invention provides a method for manufacturing a micromechanical resonator, which is characterized by comprising the following steps:
obtaining a substrate structure, wherein a resonance part and two electrode parts which are positioned at two sides of the resonance part and are arranged at intervals are formed on the substrate structure;
growing a sacrificial layer on the substrate structure and patterning the sacrificial layer to partially expose the resonance part and the two electrode parts;
depositing and patterning first polycrystalline silicon, and forming a resonance structure, an input electrode and an output electrode corresponding to the resonance part and the two electrode parts, wherein capacitance gaps are formed between the input electrode and the resonance structure and between the output electrode and the resonance structure;
releasing the sacrificial layer under the resonance structure to obtain a resonator wafer;
and preparing a packaging cover plate, and bonding the packaging cover plate and the resonator wafer in a vacuum mode to form the MEMS resonator.
Optionally, the step of obtaining a substrate structure, where a resonance portion and two electrode portions that are located on two sides of the resonance portion and are arranged at an interval are formed in the substrate structure, includes:
obtaining a silicon substrate, growing a dielectric layer on the surface of the silicon substrate, and imaging the dielectric layer to be used as a signal isolation layer;
and depositing and patterning second polysilicon to form the resonance part and the two electrode parts as a signal transmission layer, wherein the signal transmission layer and the signal isolation layer jointly form the substrate structure.
Optionally, the material of the dielectric layer includes any one of silicon oxide and silicon nitride.
Optionally, a packaging ring is further formed by depositing and patterning the first polysilicon, and the input electrode, the resonance structure, and the output electrode are all located in the packaging ring;
the step of releasing the sacrificial layer under the resonant structure to obtain a resonator wafer further comprises:
and depositing and patterning a metal layer, forming two electrode pads corresponding to the input electrode and the output electrode, and forming a packaging ring pad corresponding to the packaging ring.
Optionally, the electrode pad and the package ring pad are made of any one of Si, Au, Sn, In, Al, and glass paste.
Optionally, the step of preparing the package cover sheet comprises:
obtaining a silicon substrate, arranging two conductive silicon columns on the silicon substrate corresponding to the input electrode and the output electrode, and arranging two insulation structures corresponding to the two conductive silicon columns;
the silicon substrate comprises a packaging surface and an exposed surface which are oppositely arranged, a packaging cavity is formed on the packaging surface in a preparation mode, the two conductive silicon columns are located in the packaging cavity, and the end parts of the two conductive silicon columns are arranged to protrude out of the bottom wall surface of the packaging cavity;
and preparing a surface metal layer on the exposed surface, and preparing a welding structure on one side of the packaging surface, wherein the surface metal layer is arranged corresponding to the conductive silicon column to form the packaging cover plate.
Optionally, a packaging ring is further formed by depositing and patterning the first polysilicon, and the input electrode, the resonance structure, and the output electrode are all located in the packaging ring;
the welding structure comprises a packaging bonding pad arranged corresponding to the packaging ring and electrical bonding pads correspondingly arranged on the end faces of the two conductive silicon columns.
Optionally, the step of obtaining a silicon substrate, setting two conductive silicon pillars on the silicon substrate corresponding to the input electrode and the output electrode, and setting two insulation structures corresponding to the two conductive silicon pillars further includes:
obtaining a silicon substrate, and etching two annular grooves on the silicon substrate corresponding to the input electrode and the output electrode to form two conductive silicon columns;
filling insulating materials in the two annular grooves to form the insulating structure;
and grinding the silicon substrate to expose the conductive silicon column and the insulating structure on the end surfaces of two sides of the silicon substrate.
Optionally, the insulating material includes any one of SiO2, glass, and silicon nitride.
Optionally, the material of the sacrificial layer includes any one of SiO2 and PSG.
In the technical scheme provided by the invention, the resonant structure, the input electrode and the output electrode are formed by depositing and patterning the first polysilicon, the sealing of the resonator is realized by releasing the sacrificial layer movable resonant wafer under the resonant structure and the packaging cover plate, the vacuum airtightness is ensured, the whole process flow is simple and reliable, and the preparation with high precision, high quality, large batch and low cost can be realized.
Drawings
FIG. 1 is a schematic cross-sectional view of an MEMS resonator according to the present invention;
FIG. 2 is a schematic cross-sectional structural view of a substrate structure provided by the present invention;
FIG. 3 is a schematic cross-sectional view of the first polysilicon deposition of FIG. 2;
FIG. 4 is a schematic cross-sectional view of FIG. 3 showing the release of the sacrificial layer;
FIG. 5 is a schematic cross-sectional structural view of a silicon substrate growth medium layer provided by the present invention;
FIG. 6 is a schematic cross-sectional view of the second polysilicon deposition of FIG. 5;
FIG. 7 is a schematic cross-sectional view of the deposited metal layer of FIG. 4;
FIG. 8 is a schematic cross-sectional view of a silicon substrate according to the present invention;
FIG. 9 is a schematic cross-sectional view of the package cavity of FIG. 8;
FIG. 10 is a schematic cross-sectional view of the surface metal layer and the solder structure of FIG. 9;
FIG. 11 is a schematic cross-sectional structural view of a silicon substrate according to the present invention.
The reference numbers illustrate:
| reference numerals | Name (R) | Reference numerals | Name (R) |
| 1 | |
10 | |
| 2 | |
11 | |
| 3 | |
12 | |
| 4 | |
13 | |
| 5 | |
14 | First |
| 6 | |
15 | Electrode |
| 7 | |
16 | |
| 8 | |
17 | |
| 9 | Conductive silicon column |
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to specific embodiments and the accompanying drawings.
It should be noted that, if directional indication is involved in the embodiment of the present invention, the directional indication is only used for explaining the relative positional relationship, the motion situation, and the like between the components in a certain posture, and if the certain posture is changed, the directional indication is changed accordingly.
In addition, if there is a description of "first", "second", etc. in an embodiment of the present invention, the description of "first", "second", etc. is for descriptive purposes only and is not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In addition, technical solutions between various embodiments may be combined with each other, but must be realized by a person skilled in the art, and when the technical solutions are contradictory or cannot be realized, such a combination should not be considered to exist, and is not within the protection scope of the present invention.
Referring to fig. 1, the present application provides a MEMS resonator, which includes a resonant structure 1, an input electrode 2, an output electrode 3, and a capacitor gap 4.
The input electrode 2 and the output electrode 3 are positioned on the side of the resonance structure 1 and have a micro distance; a small gap between the input electrode 2 and the resonant structure 1 forms a capacitance driving force, and the resonant structure 1 can be driven to vibrate in a plane by adding an alternating current signal during working; a small gap between the resonant structure 1 and the output electrode 3 can realize capacitance change, and a stable resonant frequency signal is induced at the output electrode;
referring to fig. 2 to 4, the present application further provides a method for manufacturing a micromechanical resonator, including the following steps:
s10, obtaining a substrate structure, wherein the substrate structure is provided with a resonance part and two electrode parts which are positioned at two sides of the resonance part and are arranged at intervals;
s20, growing a sacrificial layer 13 on the substrate structure and patterning to expose the resonance part and the two electrode parts partially;
s30, depositing and patterning first polysilicon 14, and forming a resonant structure 1, an input electrode 2 and an output electrode 3 corresponding to the resonant part and the two electrode parts, wherein a capacitance gap 4 is formed between each of the input electrode 2 and the output electrode 3 and the resonant structure 1;
s40, releasing the sacrificial layer 13 under the resonance structure 1 to obtain a resonator wafer;
s50, preparing a packaging cover plate, and bonding the packaging cover plate and the resonator wafer in vacuum to form the MEMS resonator.
In the technical scheme provided by the invention, the resonant structure, the input electrode and the output electrode are formed by depositing and patterning the first polysilicon, the sealing of the resonator is realized by releasing the sacrificial layer movable resonant wafer under the resonant structure and the packaging cover plate, the vacuum airtightness is ensured, the whole process flow is simple and reliable, and the preparation with high precision, high quality, large batch and low cost can be realized.
It should be noted that the resonant structure 1 is disposed in a beam shape, wherein the top cross section of the resonant structure is disposed in a circular disc, a square plate, a circular ring or a square ring, which is not limited herein.
In addition, in order to facilitate releasing the sacrificial layer 13 under the resonant structure 1, a plurality of release holes are formed in the resonant structure 1, the release holes may be in any one of a circular shape and a square shape, and the plurality of release holes are arranged in different arrays according to the shape of the resonant structure.
Further, referring to fig. 5 to 6, step S10 includes:
s11, obtaining a silicon substrate, growing a dielectric layer 11 on the surface of the silicon substrate and imaging the dielectric layer to be used as a signal isolation layer;
and S12, depositing and patterning second polysilicon 12 to form the resonance part and the two electrode parts as signal transmission layers, wherein the signal transmission layers and the signal isolation layer jointly form the substrate structure.
The material of the dielectric layer 11 includes any one of silicon oxide and silicon nitride.
On the other hand, for the convenience of packaging, referring to fig. 7, a packaging ring 6 is further formed by depositing and patterning the first polysilicon 14, and the input electrode 2, the resonant structure 1 and the output electrode 3 are all located in the packaging ring 6; step S40 is preceded by:
s401, depositing and patterning a metal layer, forming two electrode pads 15 corresponding to the input electrode and the output electrode, and forming a packaging ring pad 7 corresponding to the packaging ring 6.
In this embodiment, the material of the electrode pad and the package ring pad 7 includes any one of Si, Au, Sn, In, Al, and glass paste.
On the other hand, referring to fig. 8 to 10, the step of preparing the package cover plate includes:
s51, obtaining a silicon substrate, arranging two conductive silicon pillars 9 on the silicon substrate corresponding to the input electrode and the output electrode, and arranging two insulation structures corresponding to the two conductive silicon pillars 9;
s52, the silicon substrate comprises a packaging surface and an exposed surface which are oppositely arranged, a packaging cavity 5 is formed on the packaging surface, two conductive silicon pillars 9 are located in the packaging cavity 5, and the end parts of the two conductive silicon pillars are arranged to protrude out of the bottom wall surface of the packaging cavity 5;
s53, preparing a surface metal layer 10 on the exposed surface, and preparing a welding structure on one side of the packaging surface, wherein the surface metal layer 10 is arranged corresponding to the conductive silicon pillar 9 to form the packaging cover plate.
Note that the method of forming the package cavity 5 includes any one of wet etching and dry etching, and may be anisotropic etching or isotropic etching.
Specifically, a packaging ring 6 is further formed by depositing and patterning first polysilicon 14, and the input electrode 2, the resonant structure 1 and the output electrode 3 are all located in the packaging ring 6;
the welding structure comprises a packaging bonding pad 8 arranged corresponding to the packaging ring 6 and an electrical bonding pad 16 correspondingly arranged on the end faces of the two conductive silicon columns 9.
Further, please refer to fig. 11, step S51 further includes:
s511, obtaining a silicon substrate, and etching two annular grooves 17 on the silicon substrate corresponding to the input electrode 2 and the output electrode 3 to form two conductive silicon pillars 9;
s512, filling insulating materials in the two annular grooves to form the insulating structure;
s513, grinding the silicon substrate to expose the conductive silicon pillar 9 and the insulating structure on the two side end surfaces of the silicon substrate.
The insulating material includes any one of SiO2, glass, and silicon nitride.
On the other hand, the material of the sacrificial layer includes any one of SiO2 and PSG.
It should be noted that the manner of vacuum bonding the package cover and the resonator wafer includes any one of anodic bonding, eutectic bonding, and interlayer bonding, and is not particularly limited herein.
In order to make the process steps described in the present invention clearer and more obvious, a specific example of the preparation is provided below:
1. growing a dielectric layer 11 on the surface of a silicon substrate and patterning the dielectric layer to be used as a signal isolation layer;
2. depositing and patterning second polysilicon 12 to serve as a signal transmission layer, and defining an electrode and an electrode lead;
3. growing and patterning a sacrificial layer 13, and isolating the electrode and the resonant structure;
4. depositing and patterning first polysilicon 14, and manufacturing a resonant structure 1, an input electrode 2, an output electrode 3, a capacitor gap 4 and a packaging ring 6;
5. depositing and patterning a metal layer, and preparing an electrode bonding pad 15 and a packaging ring bonding pad 7 to obtain a resonator wafer;
6. removing the sacrificial layer 13 below the resonant structure through the release holes to release the resonant structure 1;
7. etching the silicon substrate to form an annular groove 17;
8. the annular groove 17 is filled with insulating materials to realize electrical insulation;
9. grinding the two sides to thin the silicon substrate, and simultaneously exposing the conductive silicon column 9 and the insulating structure;
10. etching any side of the thinned silicon cover plate substrate to form a packaging cavity 5 for accommodating a resonance structure;
11. manufacturing a packaging bonding pad 8 and an electrical bonding pad 16 on one surface of a silicon substrate containing a packaging cavity 5, and manufacturing a surface metal layer 10 on the other surface of the silicon substrate to be used as a plane electrical lead to obtain a packaging cover plate;
12. and carrying out vacuum airtight bonding on the resonator wafer and the packaging cover plate, and simultaneously realizing electrical bonding pad connection and packaging ring bonding.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention, and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A method for manufacturing a micromechanical resonator, comprising the steps of:
obtaining a substrate structure, wherein a resonance part and two electrode parts which are positioned at two sides of the resonance part and are arranged at intervals are formed on the substrate structure;
growing a sacrificial layer on the substrate structure and patterning the sacrificial layer to partially expose the resonance part and the two electrode parts;
depositing and patterning first polycrystalline silicon, and forming a resonance structure, an input electrode and an output electrode corresponding to the resonance part and the two electrode parts, wherein capacitance gaps are formed between the input electrode and the resonance structure and between the output electrode and the resonance structure;
releasing the sacrificial layer under the resonance structure to obtain a resonator wafer;
and preparing a packaging cover plate, and bonding the packaging cover plate and the resonator wafer in a vacuum mode to form the MEMS resonator.
2. The method for manufacturing a micromechanical resonator according to claim 1, wherein the step of obtaining a substrate structure formed with a resonance portion and two electrode portions on both sides of the resonance portion and disposed at an interval includes:
obtaining a silicon substrate, growing a dielectric layer on the surface of the silicon substrate, and imaging the dielectric layer to be used as a signal isolation layer;
and depositing and patterning second polysilicon to form the resonance part and the two electrode parts as a signal transmission layer, wherein the signal transmission layer and the signal isolation layer jointly form the substrate structure.
3. The method according to claim 2, wherein a material of the dielectric layer includes any one of silicon oxide and silicon nitride.
4. The method of fabricating a micromechanical resonator according to claim 1, wherein a first polysilicon is deposited and patterned to further form an encapsulation ring, the input electrode, the resonant structure, and the output electrode all being within the encapsulation ring;
the step of releasing the sacrificial layer under the resonant structure to obtain a resonator wafer further comprises:
and depositing and patterning a metal layer, forming two electrode pads corresponding to the input electrode and the output electrode, and forming a packaging ring pad corresponding to the packaging ring.
5. The method according to claim 4, wherein a material of the electrode pad and the package ring pad includes any one of Si, Au, Sn, In, Al, and glass paste.
6. The method for fabricating a micromechanical resonator according to claim 1, wherein the step of fabricating a cover plate comprises:
obtaining a silicon substrate, arranging two conductive silicon columns on the silicon substrate corresponding to the input electrode and the output electrode, and arranging two insulation structures corresponding to the two conductive silicon columns;
the silicon substrate comprises a packaging surface and an exposed surface which are oppositely arranged, a packaging cavity is formed on the packaging surface in a preparation mode, the two conductive silicon columns are located in the packaging cavity, and the end parts of the two conductive silicon columns are arranged to protrude out of the bottom wall surface of the packaging cavity;
and preparing a surface metal layer on the exposed surface, and preparing a welding structure on one side of the packaging surface, wherein the surface metal layer is arranged corresponding to the conductive silicon column to form the packaging cover plate.
7. The method of fabricating a micromechanical resonator according to claim 6, wherein a first polysilicon is deposited and patterned to further form an encapsulation ring, the input electrode, the resonant structure, and the output electrode all being within the encapsulation ring;
the welding structure comprises a packaging bonding pad arranged corresponding to the packaging ring and electrical bonding pads arranged on the end faces of the two conductive silicon columns.
8. The method according to claim 6, wherein the step of obtaining a silicon substrate, wherein two conductive silicon pillars are provided on the silicon substrate corresponding to the input electrode and the output electrode, and wherein two insulating structures are provided corresponding to the two conductive silicon pillars further comprises:
obtaining a silicon substrate, and etching two annular grooves on the silicon substrate corresponding to the input electrode and the output electrode to form two conductive silicon columns;
filling insulating materials in the two annular grooves to form the insulating structure;
and grinding the silicon substrate to expose the conductive silicon column and the insulating structure on the end surfaces of two sides of the silicon substrate.
9. The method for manufacturing a micromechanical resonator according to claim 8, wherein the insulating material includes any one of SiO2, glass, and silicon nitride.
10. The method for manufacturing a micromechanical resonator according to claim 1, wherein the material of the sacrificial layer includes any one of SiO2 and PSG.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050140247A1 (en) * | 2003-12-26 | 2005-06-30 | Lee Joo H. | Film bulk acoustic wave resonator device and manufacturing method thereof |
| CN103281048A (en) * | 2013-06-14 | 2013-09-04 | 中国科学院半导体研究所 | Micromechanical resonator and manufacturing method thereof |
| CN105190265A (en) * | 2013-03-19 | 2015-12-23 | 罗伯特·博世有限公司 | Micromechanical sensor device and corresponding production method |
| CN111371424A (en) * | 2018-12-26 | 2020-07-03 | 中芯集成电路（宁波）有限公司上海分公司 | Method and structure for integrating control circuit and bulk acoustic wave filter |
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2021
- 2021-10-11 CN CN202111184437.1A patent/CN113872544A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050140247A1 (en) * | 2003-12-26 | 2005-06-30 | Lee Joo H. | Film bulk acoustic wave resonator device and manufacturing method thereof |
| CN105190265A (en) * | 2013-03-19 | 2015-12-23 | 罗伯特·博世有限公司 | Micromechanical sensor device and corresponding production method |
| CN103281048A (en) * | 2013-06-14 | 2013-09-04 | 中国科学院半导体研究所 | Micromechanical resonator and manufacturing method thereof |
| CN111371424A (en) * | 2018-12-26 | 2020-07-03 | 中芯集成电路（宁波）有限公司上海分公司 | Method and structure for integrating control circuit and bulk acoustic wave filter |
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