CN113871282A - Gas removal equipment, method, device, control system and storage medium - Google Patents
Gas removal equipment, method, device, control system and storage medium Download PDFInfo
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- CN113871282A CN113871282A CN202111132439.6A CN202111132439A CN113871282A CN 113871282 A CN113871282 A CN 113871282A CN 202111132439 A CN202111132439 A CN 202111132439A CN 113871282 A CN113871282 A CN 113871282A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32834—Exhausting
- H01J37/32844—Treating effluent gases
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- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- Y02C—CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
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Abstract
The present disclosure provides a gas purging apparatus, a method, a device, a control system, and a storage medium, the gas purging apparatus including a case, a partition, an air extracting device, a control unit, and a detection device. The box body is internally provided with an accommodating space, the partition part is arranged in the box body, and the accommodating space is divided into a first accommodating space and a second accommodating space by the partition part. The partition part is provided with a ventilation part which is communicated with the first accommodating space and the second accommodating space. The air extracting device is communicated with the second accommodating space of the box body, and the control unit is electrically connected with the air extracting device. The detection device is set to detect the gas residual parameters of the wafer module and is electrically connected with the control unit. In the present disclosure, the gas flow channel is formed by the separating portion and the gas-extracting device disposed at the side portion, so as to effectively remove the residual gas on the surface of the wafer module. Meanwhile, the detection device is arranged to assist the air extraction device, so that the residual gas parameters of the wafer module can be detected, and the residual gas of the wafer module can be removed.
Description
Technical Field
The present disclosure relates to the field of semiconductor technologies, and in particular, to a gas purging apparatus, a gas purging method, a gas purging apparatus, a gas purging control system, and a storage medium.
Background
In a semiconductor manufacturing process, a plurality of gases, such as a dry etching process, are used to etch the surface of a wafer through a corrosive gas, thereby completing a corresponding process. Generally, after these processes are completed, the reaction chamber and the wafer surface may have gas residue, and the wafer is usually left for a period of time to remove the residual gas on the surface before the next process is performed. However, the method of removing the residual gas by placing the wafer has low removal efficiency and unsatisfactory removal effect, which not only affects the normal operation of the next process, but also affects the yield of the wafer, causing loss to manufacturers.
Disclosure of Invention
The following is a summary of the subject matter described in detail in this disclosure. This summary is not intended to limit the scope of the claims.
The present disclosure provides a gas purging apparatus, method, device, control system, and storage medium.
A first aspect of the present disclosure provides a gas purge apparatus, comprising:
the refrigerator comprises a refrigerator body, a door body and a door body, wherein an accommodating space is formed inside the refrigerator body;
the separating part is arranged in the box body, the separating part extends along the vertical direction of the box body, the accommodating space is separated into a first accommodating space and a second accommodating space by the separating part, and the first accommodating space is used for accommodating the wafer module; the partition part is provided with a ventilation part which is communicated with the first accommodating space and the second accommodating space;
the air extracting device is communicated with the second accommodating space of the box body and is used for extracting the gas in the second accommodating space;
the control unit is electrically connected with the air extracting device;
the detection device is used for detecting the gas residual parameters of the wafer module and is electrically connected with the control unit.
According to some embodiments of the present disclosure, the box body includes at least one air outlet channel, the at least one air outlet channel is disposed at least one preset installation position of the box body, and the air exhaust device is communicated with the box body through the at least one air outlet channel.
According to some embodiments of the present disclosure, the outlet channel is configured as a variable diameter channel.
According to some embodiments of the present disclosure, the gas removal device further comprises at least one flange, the flange being configured as the gas outlet channel;
and the inner diameter of the flange plate is inconsistent along the axial direction of the flange plate.
According to some embodiments of the disclosure, a radial sectional area of a first end portion of the reducing channel communicating with the second accommodating space is larger than a radial sectional area of a second end portion of the reducing channel communicating with the air exhaust device.
According to some embodiments of the present disclosure, the vent portion includes a plurality of air intake through holes that are provided at intervals in a vertical direction and/or a horizontal direction of the partition portion.
According to some embodiments of the present disclosure, the first accommodating space includes a plurality of airflow channels therein, the wafer module includes a plurality of wafers, each airflow channel is located between two adjacent wafers, and the gas above the wafers flows to the gas inlet through hole along the airflow channels.
According to some embodiments of the present disclosure, a preset number of the air inlet through holes are formed between every two adjacent wafers.
According to some embodiments of the present disclosure, the air extraction device includes an air extraction portion and a duct assembly, the air extraction portion being connected to the air outlet channel through the duct assembly.
According to some embodiments of the present disclosure, the air extraction device further comprises an adjustment unit mounted to the duct assembly, the adjustment unit being in communication with the control unit.
According to some embodiments of the present disclosure, the air extraction device comprises a pressure monitoring unit disposed in the pipe assembly, the pressure monitoring unit being in communication with the control unit.
According to some embodiments of the present disclosure, the gas cleaning apparatus further comprises a wind speed monitoring unit;
the wind speed monitoring unit is arranged in the second accommodating space; and/or the wind speed monitoring unit is arranged in the first accommodating space;
the wind speed monitoring unit is in communication connection with the control unit.
According to some embodiments of the disclosure, the gas purging device further comprises a reminder device, the reminder device being in communicative connection with the control unit.
A second aspect of the present disclosure provides a gas purging method, including:
acquiring gas residual parameters on the surface of the wafer module;
comparing the gas residual parameters with gas preset parameters;
and determining the gas adjusting parameters of the gas exhaust device based on the comparison result.
According to some embodiments of the disclosure, the determining a gas adjustment parameter of the gas evacuation device based on the comparison comprises:
if the gas residual parameter is larger than the preset gas parameter, controlling the gas flow rate to be increased when the gas pumping device pumps the gas;
and if the gas residual parameter is less than or equal to the gas preset parameter, sending a reminding message to the reminding device.
A third aspect of the present disclosure provides a gas purging device, comprising:
the acquisition module is used for acquiring gas residual parameters on the surface of the wafer module;
a comparison module configured to compare the gas residual parameter with a gas preset parameter;
and the determining module is used for determining the gas adjusting parameters of the gas exhausting device based on the comparison result.
A fourth aspect of the present disclosure provides a control system of a gas purge device, the control system comprising:
a processor;
a memory for storing processor-executable instructions;
wherein the processor is configured to perform:
acquiring gas residual parameters on the surface of the wafer module;
comparing the gas residual parameters with gas preset parameters;
and determining the gas adjusting parameters of the gas exhaust device based on the comparison result.
A fifth aspect of the disclosure provides a non-transitory computer readable storage medium having instructions that, when executed by a processor of a control system of a gas purging apparatus, enable the control system of the gas purging apparatus to perform:
acquiring gas residual parameters on the surface of the wafer module;
comparing the gas residual parameters with gas preset parameters;
and determining the gas adjusting parameters of the gas exhaust device based on the comparison result.
In the gas removing equipment, the method, the device, the control system and the storage medium provided by the embodiment of the disclosure, the gas flow channel is formed by utilizing the separating part and the air extractor arranged on the side part in the gas removing equipment, so that residual gas on the surface of the wafer module can be effectively and uniformly removed, a gas removing dead angle can be avoided, the problem that the residual gas on the surface is removed unevenly and incompletely because the flow rate is smaller and smaller when the wafer is far away in etching can be avoided, and the yield of the wafer is improved. Simultaneously, set up detection device and assist air exhaust device, detect the gaseous residual parameter of wafer module, guarantee that the residual gas of wafer module can both be clear away, promote gaseous clearance effect.
Other aspects will be apparent upon reading and understanding the attached drawings and detailed description.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of the specification, illustrate embodiments of the disclosure and together with the description, serve to explain the principles of the embodiments of the disclosure. In the drawings, like reference numerals are used to indicate like elements. The drawings in the following description are directed to some, but not all embodiments of the disclosure. For a person skilled in the art, other figures can be derived from these figures without inventive effort.
Fig. 1 is a schematic diagram illustrating a gas purging device according to an exemplary embodiment.
Fig. 2 is a schematic side view of the gas removing apparatus according to fig. 1.
Fig. 3 is a schematic structural view of a partition shown according to an exemplary embodiment.
Fig. 4 is a schematic structural view of a partition shown according to another exemplary embodiment.
FIG. 5 is a flow chart illustrating a method of gas purging in accordance with an exemplary embodiment.
FIG. 6 is a block diagram illustrating a gas purging device according to an exemplary embodiment.
FIG. 7 is a block diagram illustrating a computer device according to an example embodiment.
Reference numerals:
1. a box body; 11. an accommodating space; 111. a first accommodating space; 112. a second accommodating space; 12. a flange plate;
2. a partition portion; 21. a ventilation section;
3. an air extraction device; 31. an air extraction part; 32. a conduit assembly; 33. an adjustment unit; 34. a pressure monitoring unit;
4. a wafer module; 5. a detection device; 6. a wind speed monitoring unit; 7. a reminder device;
8. a computer device; 81. a processor; 82. a memory.
Detailed Description
To make the objects, technical solutions and advantages of the embodiments of the present disclosure more clear, the technical solutions in the embodiments of the present disclosure will be described clearly and completely with reference to the drawings in the embodiments of the present disclosure, and it is obvious that the described embodiments are some embodiments of the present disclosure, but not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments disclosed herein without making any creative effort, shall fall within the protection scope of the present disclosure. It should be noted that, in the present disclosure, the embodiments and features of the embodiments may be arbitrarily combined with each other without conflict.
In the related art, after the wafer process is finished, the wafer is removed from the reaction chamber, and residual gas exists on the surface of the wafer. And moving the wafer into a purging storage box, and pumping residual gas from a pipeline below. However, the gas flow rate on the surface of the wafer is slow, and the problem of inconsistent removal degree of the residual gas on the wafer exists at different positions, so that the gas extraction effect of the wafer far away from the gas extraction part is poor, and the residual gas on the upper surface of the wafer cannot be cleaned. When the residual gas on the wafer is too much, it will cause the defect of the next process. For example, defects in the etching process affect the yield of semiconductor products, causing loss for manufacturers.
The present disclosure provides a gas purging apparatus, which includes a tank, a partition, an air extraction device, a control unit, and a detection device. The box is internally provided with an accommodating space, the partition part is arranged in the box and extends along the vertical direction of the box, the accommodating space is divided into a first accommodating space and a second accommodating space by the partition part, and the first accommodating space is used for accommodating the wafer module. Wherein, the partition part is provided with a ventilation part which is communicated with the first accommodating space and the second accommodating space. The air extracting device is communicated with the second accommodating space of the box body and is used for extracting the gas in the second accommodating space. The control unit is electrically connected with the air extracting device. The detection device is set to detect the gas residual parameters of the wafer module and is electrically connected with the control unit. Utilize the partition part and set up in the air exhaust device of lateral part in this disclosure, form the gas flow channel, the effective even residual gas who gets rid of the wafer module surface, not only can avoid appearing gaseous clear dead angle, can avoid the wafer to get rid of because the distance is more far away the flow is more little simultaneously, makes surface residual gas get rid of inhomogeneous, incomplete problem, improves the yield of wafer. Simultaneously, set up detection device and assist air exhaust device, detect the gaseous residual parameter of wafer module, guarantee that the residual gas of wafer module can both be clear away, promote gaseous clearance effect.
In an exemplary embodiment of the present disclosure, a gas removing apparatus is provided, as shown in fig. 1 and fig. 2, fig. 1 shows a schematic structural diagram of the gas removing apparatus provided according to an exemplary embodiment of the present disclosure, fig. 2 shows a schematic side view of the structure of the gas removing apparatus in fig. 1, and a processing method of a semiconductor structure is described below with reference to fig. 1 and fig. 2.
The semiconductor structure is not limited in this embodiment, and the semiconductor structure is taken as a wafer module as an example for description, but the embodiment is not limited thereto, and the semiconductor structure in this embodiment may be other structures.
As shown in fig. 1, an exemplary embodiment of the present disclosure provides a gas purging apparatus including a case 1, a partition 2, a gas exhaust device 3, a control unit (not shown in the drawings), and a detection device 5.
The box body 1 is made of corrosion-resistant materials, so that residual gas is prevented from corroding the box body 1, and the service life of the box body 1 is prolonged. The box body 1 is internally provided with an accommodating space 11, and the box body 1 is of a closed structure so as to seal the accommodating space 11 and prevent the gas outside the box body 1 from entering the accommodating space 11.
The partition portion 2 is disposed in the box body 1, the partition portion 2 extends along a vertical direction (refer to a Z axis shown in fig. 1) of the box body 1, the accommodating space 11 is partitioned into a first accommodating space 111 and a second accommodating space 112 by the partition portion 2, and the first accommodating space 111 is configured to accommodate the wafer module 4 and provide a space for removing residual gas for the wafer module 4. The partition 2 is provided with a ventilation portion 21 communicating the first accommodating space 111 and the second accommodating space 112, so that the gas in the first accommodating space 111 can flow to the second accommodating space 112, or the gas in the second accommodating space 112 can flow to the first accommodating space 111.
In one example, referring to fig. 3, the ventilation part 21 includes a plurality of air inlet through holes spaced apart in a vertical direction of the partition 2, and the plurality of air inlet through holes may be positioned along a center axis of symmetry in a horizontal direction (refer to an X axis shown in fig. 1) of the partition 2 to uniformize an air flow.
The first accommodating space 111 includes a plurality of airflow channels therein, and the wafer module 4 includes a plurality of wafers arranged at intervals along the vertical direction of the box 1. Each gas flow channel is located between two adjacent wafers, that is, a gap between each two adjacent wafers is configured as a gas flow channel. The airflow channels are layered, each layer corresponds to one air inlet through hole, and if the second accommodating space 112 is in an air-extracting state, the gas above the wafer can flow to the corresponding air inlet through hole along the airflow channels. And each air inlet through hole is positioned on the central axis (refer to the Y axis shown in figure 1) of the corresponding air flow channel, so that the air on the two sides of the central axis of the air flow channel can flow to the air inlet through holes at the same speed, the air in each air flow channel can uniformly flow, dead angles of air cleaning are avoided, the cleaning effect of the air on the surface of the wafer is improved, and meanwhile, the problem that the surface residual air is not uniformly and completely removed because the flow is smaller when the distance is longer in etching of the wafer can be avoided, the effect is poor, and the defect of wafer etching is further caused.
In another example, referring to fig. 4, the venting portion 21 includes a plurality of air inlet through holes that are spaced apart in a horizontal direction of the partition 2 to equalize air flow.
The first receiving space 111 includes an airflow channel therein, and the wafer module 4 includes a wafer, and a space between an upper surface of the wafer and an upper top surface of the chamber 1 and a space between a lower surface of the wafer and a lower bottom surface of the chamber 1 are respectively configured as an upper airflow channel and a lower airflow channel. The air inlet through holes are arranged opposite to the side portions of the wafer, the axes of the air inlet through holes can be flush with the central cross section of the wafer in the thickness direction (refer to the Z axis shown in figure 1), the distances between the air inlet through holes and the upper airflow flow channel and between the air inlet through holes and the lower airflow flow channel are equal, the air in the upper airflow flow channel and the air in the lower airflow flow channel can flow to the air inlet through holes at the same speed, and the air in each airflow flow channel can flow uniformly.
In another example, referring to fig. 1, the vent portion 21 includes a plurality of air intake through holes that are provided at intervals in the vertical direction and the horizontal direction of the partition portion 2.
The first receiving space 111 includes a plurality of airflow channels therein, and the wafer module 4 includes a plurality of wafers, for example, 25 or 50 wafers, which are arranged at intervals along the vertical direction of the box 1. Each gas flow channel is located between two adjacent wafers, i.e. the gap between each two adjacent wafers is configured as a gas flow channel. And a preset number of air inlet through holes are formed between every two adjacent wafers. For example, the plurality of airflow flow passages are arranged in layers, each layer corresponding to a predetermined number of intake through holes. If the second accommodating space 112 is in an air-extracting state, the gas above and below each wafer can flow to the corresponding air inlet through hole along the airflow channel. And every air current flow channel all is provided with the air inlet through-hole of predetermineeing quantity, and the air inlet through-hole of predetermineeing quantity can be arranged in proper order along the horizontal direction of partition portion 2, guarantees that the gas in every air current flow channel can both evenly flow, avoids appearing gaseous clear dead angle, further promotes wafer module 4 surface gaseous clearance effect, is applicable to the mass and clears away.
Here, it should be noted that the number of the intake through holes in the vertical direction of the partition 2 is not necessarily the same as the number of the airflow passages, and the intake through holes are not necessarily in one-to-one correspondence with the airflow passages. The number of the air inlet channels in the vertical direction of the partition part 2 is smaller than that of the air flow channels, and the air inlet channels can be uniformly arranged in the vertical direction of the partition part 2 as long as the condition that the air in the air flow channels uniformly flows is met.
In the present embodiment, as shown in fig. 1 and fig. 2, the air extracting device 3 is communicated with the second accommodating space 112 of the box 1, the air extracting device 3 is configured to extract the air in the second accommodating space 112, and a negative pressure state is formed in the second accommodating space 112, so that the air in the first accommodating space 111 enters the second accommodating space 112 through the ventilation portion 21 to remove the air in the first accommodating space 111, thereby ensuring the cleanliness of the wafer module 4.
The control unit may be, for example, a Controller (FDC), and the control unit is electrically connected to the air exhaust device 3, so that the control unit can control the opening or closing of the air exhaust device 3.
In the present embodiment, as shown in fig. 1, the detecting device 5 is disposed in the second accommodating space 112, and the detecting device 5 is, for example, a sensor. The detection device 5 is configured to detect the gas residual parameters of the wafer module 4, and the detection device 5 is electrically connected with the control unit so that the detection result of the detection device 5 is transmitted to the control unit. The gas residual parameter may be, for example, a gas type, a flow rate of the gas, a gas concentration, a gas residual amount, or the like. The detection device 5 detects the residual parameters of the gas in the wafer module 4 in real time, and the control unit obtains the detection result and can control the pumping parameters of the pumping device 3 based on the detection result.
When the control unit obtains that the residual gas parameter of the wafer module 4 is higher than the preset value, the control unit can control the gas pumping device 3 to pump gas at a high speed, so that the pumping time is shortened, and the degassing efficiency of the wafer module 4 is improved.
When the control unit obtains that the residual gas parameter of the wafer module 4 is lower than or equal to the preset value, the control unit can control the gas pumping device 3 to pump gas at a low speed, so as to avoid the negative influence on the wafer module 4 caused by overlarge pumping force.
In an exemplary embodiment, as shown in fig. 1 and 2, the box body 1 includes at least one air outlet channel, and the air outlet channel penetrates through a sidewall of the box body 1 and is communicated with the second accommodating space 112. At least one air outlet channel is arranged at least one preset installation position of the box body 1, and the air extracting device 3 is communicated with the second accommodating space 112 of the box body 1 through the at least one air outlet channel. The preset mounting position may be, for example, a quarter point of the sidewall of the box 1, and the air outlet channel and the ventilation portion 21 are matched with each other, so that the gas on the surface of the wafer module 4 flows at a constant speed. The air extractor 3 is in an air extracting state, the air outlet channel is in a negative pressure state, the pressure value in the air outlet channel is lower than the pressure value in the second accommodating space 112, so that the pressure value in the second accommodating space 112 is lower than the pressure value in the first accommodating space 111, the gas in the first accommodating space 111 enters the second accommodating space 112, the gas in the second accommodating space 112 enters the air outlet channel, and the air outlet channel is extracted out to thoroughly remove the residual gas on the surface of the wafer module 4.
Referring to fig. 2, in order to ensure equal gas flow rate and better gas extraction effect of each gas inlet through hole, the gas removing apparatus further includes at least one flange 12 installed on the box body 1, and the flange 12 is configured as a gas outlet channel. The flange 12 has a non-uniform inner diameter along the axial direction of the flange 12 (see the Y-axis in fig. 1 and 2). The flange 12 is, for example, a round-to-square structure, so that the air outlet channel is constructed as a variable diameter channel, the radial sectional area of the first end part of the variable diameter channel, which is communicated with the second accommodating space 112, is larger than the radial sectional area of the second end part of the variable diameter channel, which is communicated with the air exhaust device 3, so that the air outlet channel forms a horn shape, the air inflow in the air outlet channel is more, and the air exhaust effect is better.
In an exemplary embodiment, as shown in fig. 1, the air extraction device 3 comprises an air extraction portion 31 and a pipe assembly 32, and the air extraction portion 31 is connected with the air outlet channel through the pipe assembly 32. The air exhaust portion 31 may be, for example, an air exhaust pump and a driving motor, the driving motor drives the air exhaust pump to exhaust air in the pipe assembly 32, so that the air in the air outlet channel flows into the pipe assembly 32.
Wherein, the air extracting device 3 further comprises a regulating unit 33, the regulating unit 33 is installed on the pipeline assembly 32, and the regulating unit 33 is in communication connection with the control unit. The adjusting unit 33 may be, for example, a smart valve, and the control unit sends a control command to the smart valve based on the result detected by the detecting device 5, and controls the smart valve to decrease or increase the opening size of the pipe assembly 32 to adjust the throughput of the gas in the pipe assembly 32.
In the present embodiment, as shown in fig. 1, the air extracting device 3 includes a pressure monitoring unit 34, the pressure monitoring unit 34 is, for example, a pressure sensor, the pressure monitoring unit 34 is disposed on the pipe assembly 32, and the pressure monitoring unit 34 is used for monitoring the pressure parameter variation in the pipe assembly 32. The pressure monitoring unit 34 is in communication connection with the control unit, so that the control unit can adjust the air extraction state of the air extraction device 3 according to the pressure parameter change, the negative pressure value in the pipeline assembly 32 is prevented from exceeding the preset negative pressure value, the pipeline assembly 32 is prevented from being damaged or bursting, and the safety is improved.
In the present embodiment, as shown in fig. 1, the gas removing apparatus further includes a wind speed monitoring unit 6. The wind speed monitoring unit 6 is disposed in the second accommodating space 112 and located at the partition 2, so as to monitor the flow rate of the gas in the second accommodating space 112. Or, the wind speed monitoring unit 6 is disposed in the first accommodating space 111 and located at the partition 2 or the side wall where the flange 12 is located, so as to monitor the flow speed of the gas in the first accommodating space 111, and the wind speed monitoring unit 6 is in communication connection with the control unit. When the flow rate of the gas in the first accommodating space 111 or the second accommodating space 112 is abnormal, and the wafer module 4 does not satisfy the condition of removing the residual gas, the control unit controls the air extractor 3 to stop extracting the gas or prompts an operator to process the gas by the operator. The condition that the wafer module 4 does not satisfy the condition of removing the residual gas may be, for example, that the residual gas on the surface of the wafer module 4 is less than the removal amount and the residual gas on the surface of the wafer module 4 is completely removed.
Here, it should be noted that the wind speed monitoring unit 6 is not limited to be disposed only in the first accommodating space 111 or the second accommodating space 112, and may also be disposed in the first accommodating space 111 and the second accommodating space 112 simultaneously, so as to perform bidirectional monitoring, improve the monitoring accuracy, and avoid erroneous determination and influence on the normal operation of the air extraction device 3. And the wind speed monitoring unit 6 may be located at any position in the first accommodating space 111 or the second accommodating space 112 as long as the monitoring function can be achieved.
In this embodiment, as shown in fig. 1, the gas purging device further includes a reminder 7, and the reminder 7 is in communication connection with the control unit. The reminding device 7 may be, for example, an indicator light.
When the wind speed monitoring unit 6 monitors that the flow rate of the gas in the accommodating space 11 is abnormal, the flow rate is transmitted to the control unit, and the control unit controls the indicator lamp to alarm and remind and warns operating personnel to process the gas in time based on the monitoring result. The pilot lamp is reported to the police and is reminded the mode that can adopt the pilot lamp to light the red light for example, reminds the operation personnel, perhaps, when adopting the constantly scintillation of pilot lamp, more directly perceived effective, the operation personnel of being convenient for acquire fast.
When the wind speed monitoring unit 6 monitors that the flow rate of the gas in the accommodating space 11 is not abnormal, the flow rate is transmitted to the control unit, and the control unit controls the indicator lamp to be in an unalarmed state based on the monitoring result. The non-alarm state can prompt the operator by adopting a mode that the indicator light is in a light-off state, or can prompt the operator by adopting a mode that the indicator light is turned on to turn on a green light.
Of course, it should be understood that the reminding device 7 is not limited to the way of indicating by the indicator light, and the above examples are only used for explaining the present embodiment and do not limit the present disclosure. The reminding device 7 may also be audio information, for example, when the wind speed monitoring unit 6 monitors that the gas flow speed in the accommodating space 11 is abnormal, the wind speed monitoring unit transmits the abnormal gas flow speed to the control unit, and the control unit controls the audio information to sound based on the monitoring result so as to remind the operator. The audio information may be, for example, "abnormal", "alarm", or other prompt voice with warning function.
The utility model provides a gaseous clean-up equipment utilizes air exhaust device to take away the gas in the second accommodation space by the lateral part of box for in the gas in the first accommodation space flows to the second accommodation space by a plurality of air inlet through holes of the partition portion of vertical placing, forms even stable air current flow channel between every two adjacent wafers, and the gas velocity of flow of every air inlet through hole on wafer surface is equal, makes the effect of bleeding better, promotes the efficiency of bleeding. Meanwhile, under the air exhaust state, the air exhaust device is provided with a detection device, a pressure monitoring unit, an adjusting unit, a wind speed monitoring unit and a reminding device, the control unit controls and reminds operating personnel, the change of air exhaust parameters is solved in time, the amount of residual gases on the surface of the wafer module is improved, and the yield of the wafer module is improved.
In an exemplary embodiment of the present disclosure, a gas purging method is provided, as shown in fig. 4, fig. 4 is a flow chart illustrating the gas purging method provided according to an exemplary embodiment of the present disclosure, and the gas purging method is described below with reference to fig. 4.
The gas removing method provided by the exemplary embodiment of the present disclosure is applied to a gas removing apparatus, and the gas removing apparatus includes an air pumping device, a reminding device, a control unit, and a detection device.
As shown in fig. 5, the gas purging method includes the steps of:
s100, acquiring residual parameters of the gas on the surface of the wafer module.
In this step, the gas residual parameter is acquired by the detection device. The gas residual parameter may be, for example, a gas type, a flow rate of the gas, a gas concentration, a gas balance, or the like.
And S110, comparing the gas residual parameter with a gas preset parameter.
In this step, the control unit obtains the gas residual parameter and compares the gas residual parameter with a gas preset parameter. The preset gas parameters may be stored in the control unit in advance, or may be input into the control unit by an operator before detection as needed.
And S120, determining gas adjusting parameters of the gas extraction device based on the comparison result.
In this step, the control unit determines gas adjustment parameters of the gas evacuation device based on the comparison.
If the gas residual parameter is larger than the preset gas parameter, controlling the gas flow rate to be increased when the gas pumping device pumps the gas; and if the gas residual parameter is less than or equal to the gas preset parameter, sending a reminding message to the reminding device.
In the method in this embodiment, the gas residual parameters at the wafer module are detected by the detection device to determine the gas residual condition on the surface of the wafer module, so that it is ensured that the gas on the surface of the wafer module can be cleaned, and the cleanliness of the wafer module is improved. Meanwhile, when the residual gas parameter is less than or equal to the preset gas parameter, a reminding message is sent to the reminding device to remind the operator of abnormity, so that the operator can conveniently deal with the abnormity in time.
In an exemplary embodiment of the present disclosure, a gas purging device is provided, as shown in fig. 6, fig. 6 shows a block diagram of a gas purging device provided according to an exemplary embodiment of the present disclosure, and the gas purging device is described below with reference to fig. 6.
In an exemplary embodiment, as shown in fig. 6, the gas removing device in the present embodiment includes: the obtaining module 110, the comparing module 120, and the determining module 130, in this embodiment, the gas purging device implements the method shown in fig. 1.
Wherein the obtaining module 110 is configured to obtain a gas residual parameter of the surface of the wafer module. The comparison module 120 is configured to compare the gas residual parameter with a gas preset parameter. The determination module 130 is configured to determine a gas adjustment parameter of the gas evacuation device based on the comparison.
Fig. 7 is a block diagram of a computer device 8 of a control system for a gas purging arrangement according to an exemplary embodiment. For example, the computer device 8 may be provided as a control system for a gas purging apparatus. Referring to fig. 7, the computer device 8 includes a processor 81, and the number of the processors may be set to one or more as necessary. The computer device 8 further comprises a memory 82 for storing instructions, such as an application program, executable by the processor 81. The number of the memories can be set to one or more according to needs. Which may store one or more application programs. The processor 81 is configured to execute instructions to perform the above-described method.
As will be appreciated by one skilled in the art, embodiments of the present disclosure may be provided as a method, apparatus (device), or computer program product. Accordingly, the present disclosure may take the form of an entirely hardware embodiment, an entirely software embodiment or an embodiment combining software and hardware aspects. Furthermore, the present disclosure may take the form of a computer program product embodied on one or more computer-usable storage media having computer-usable program code embodied in the medium. Computer storage media includes volatile and nonvolatile, removable and non-removable media implemented in any method or technology for storage of information such as computer readable instructions, data structures, program modules or other data, including, but not limited to, RAM, ROM, EEPROM, flash memory or other memory technology, CD-ROM, Digital Versatile Disks (DVD) or other optical disk storage, magnetic cassettes, magnetic tape, magnetic disk storage or other magnetic storage devices, or any other medium which can be used to store the desired information and which can be accessed by the computer, and the like. In addition, communication media typically embodies computer readable instructions, data structures, program modules or other data in a modulated data signal such as a carrier wave or other transport mechanism and includes any information delivery media as known to those skilled in the art.
In an exemplary embodiment, a non-transitory computer readable storage medium is provided that includes instructions, such as a memory 82, that are executable by the processor 81 to perform the method described above. For example, the non-transitory computer readable storage medium may be a ROM, a Random Access Memory (RAM), a CD-ROM, a magnetic tape, a floppy disk, an optical data storage device, and the like. The non-transitory computer readable storage medium, when instructions in the storage medium are executed by a processor of a control system of a semiconductor manufacturing apparatus, enables the control system of the semiconductor manufacturing apparatus to perform:
acquiring gas residual parameters on the surface of the wafer module;
comparing the gas residual parameters with gas preset parameters;
and determining the gas adjusting parameters of the gas exhaust device based on the comparison result.
The above embodiments are only used for illustrating the technical solutions of the present disclosure, and not for limiting the same; while the present disclosure has been described in detail with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present disclosure.
Claims (18)
1. A gas cleaning apparatus, characterized in that the gas cleaning apparatus comprises:
the refrigerator comprises a refrigerator body, a door body and a door body, wherein an accommodating space is formed inside the refrigerator body;
the separating part is arranged in the box body, the separating part extends along the vertical direction of the box body, the accommodating space is separated into a first accommodating space and a second accommodating space by the separating part, and the first accommodating space is used for accommodating the wafer module; the partition part is provided with a ventilation part which is communicated with the first accommodating space and the second accommodating space;
the air extracting device is communicated with the second accommodating space of the box body and is used for extracting the gas in the second accommodating space;
the control unit is electrically connected with the air extracting device;
the detection device is used for detecting the gas residual parameters of the wafer module and is electrically connected with the control unit.
2. The gas abatement apparatus of claim 1, wherein the tank comprises at least one gas outlet channel disposed at least one predetermined mounting location of the tank, the gas evacuation device communicating with the tank through the at least one gas outlet channel.
3. The gas removal apparatus of claim 2, wherein the gas outlet channel is configured as a variable diameter channel.
4. The gas removal apparatus of claim 3, further comprising at least one flange configured as the gas outlet channel;
and the inner diameter of the flange plate is inconsistent along the axial direction of the flange plate.
5. The gas removing apparatus according to claim 3, wherein a radial sectional area of a first end portion of the reducing passage communicating with the second receiving space is larger than a radial sectional area of a second end portion of the reducing passage communicating with the gas exhaust device.
6. The apparatus according to claim 1, wherein the vent portion includes a plurality of intake through holes that are provided at intervals in a vertical direction and/or a horizontal direction of the partition portion.
7. The gas removing apparatus according to claim 6, wherein the first accommodating space includes a plurality of gas flow channels therein, the wafer module includes a plurality of wafers, each gas flow channel is located between two adjacent wafers, and the gas above the wafers flows along the gas flow channels to the gas inlet through holes.
8. The gas cleaning apparatus according to claim 7, wherein a predetermined number of the gas inlet through holes are formed between every two adjacent wafers.
9. The gas abatement apparatus of claim 2, wherein the gas evacuation device comprises an evacuation portion and a conduit assembly, the evacuation portion being connected to the gas outlet channel by the conduit assembly.
10. The gas abatement apparatus of claim 9, wherein the gas evacuation device further comprises a conditioning unit mounted to the conduit assembly, the conditioning unit being in communicative connection with the control unit.
11. The gas abatement apparatus of claim 9, wherein the gas evacuation device comprises a pressure monitoring unit disposed in the conduit assembly, the pressure monitoring unit being in communication with the control unit.
12. The gas cleaning apparatus according to claim 1, further comprising a wind speed monitoring unit;
the wind speed monitoring unit is arranged in the second accommodating space; and/or the wind speed monitoring unit is arranged in the first accommodating space;
the wind speed monitoring unit is in communication connection with the control unit.
13. The gas purging apparatus of claim 1, further comprising a reminder device communicatively coupled to the control unit.
14. A gas removal method, comprising:
acquiring gas residual parameters on the surface of the wafer module;
comparing the gas residual parameters with gas preset parameters;
and determining the gas adjusting parameters of the gas exhaust device based on the comparison result.
15. The gas purging method according to claim 14, wherein determining the gas adjustment parameter of the gas evacuation device based on the comparison comprises:
if the gas residual parameter is larger than the preset gas parameter, controlling the gas flow rate to be increased when the gas pumping device pumps the gas;
and if the gas residual parameter is less than or equal to the gas preset parameter, sending a reminding message to the reminding device.
16. A gas purging device, comprising:
the acquisition module is used for acquiring gas residual parameters on the surface of the wafer module;
a comparison module configured to compare the gas residual parameter with a gas preset parameter;
and the determining module is used for determining the gas adjusting parameters of the gas exhausting device based on the comparison result.
17. A control system for a gas purging device, the control system comprising:
a processor;
a memory for storing processor-executable instructions;
wherein the processor is configured to perform:
acquiring gas residual parameters on the surface of the wafer module;
comparing the gas residual parameters with gas preset parameters;
and determining the gas adjusting parameters of the gas exhaust device based on the comparison result.
18. A non-transitory computer readable storage medium, wherein instructions in the storage medium, when executed by a processor of a control system of a gas purging device, enable the control system of the gas purging device to perform:
acquiring gas residual parameters on the surface of the wafer module;
comparing the gas residual parameters with gas preset parameters;
and determining the gas adjusting parameters of the gas exhaust device based on the comparison result.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111132439.6A CN113871282B (en) | 2021-09-26 | 2021-09-26 | Gas cleaning equipment, method, device, control system and storage medium |
| PCT/CN2021/136274 WO2023045094A1 (en) | 2021-09-26 | 2021-12-08 | Gas removal device, method and apparatus, control system and storage medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111132439.6A CN113871282B (en) | 2021-09-26 | 2021-09-26 | Gas cleaning equipment, method, device, control system and storage medium |
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| Publication Number | Publication Date |
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| CN113871282A true CN113871282A (en) | 2021-12-31 |
| CN113871282B CN113871282B (en) | 2023-01-20 |
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| CN202111132439.6A Active CN113871282B (en) | 2021-09-26 | 2021-09-26 | Gas cleaning equipment, method, device, control system and storage medium |
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| CN (1) | CN113871282B (en) |
| WO (1) | WO2023045094A1 (en) |
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| CN208444821U (en) * | 2018-06-14 | 2019-01-29 | 德淮半导体有限公司 | Wafer handler and semiconductor manufacturing equipment |
| CN112652548A (en) * | 2019-10-09 | 2021-04-13 | 长鑫存储技术有限公司 | Semiconductor processing apparatus |
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| TW440058U (en) * | 2000-01-14 | 2001-06-07 | Taiwan Semiconductor Mfg | Device for removing the residual gas |
| US20160086864A1 (en) * | 2014-09-24 | 2016-03-24 | Lam Research Corporation | Movable gas nozzle in drying module |
| CN104409393A (en) * | 2014-11-17 | 2015-03-11 | 上海华力微电子有限公司 | Wafer purification device, etching machine and Damascus etching method |
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| Publication number | Publication date |
|---|---|
| CN113871282B (en) | 2023-01-20 |
| WO2023045094A1 (en) | 2023-03-30 |
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