CN113866772A - High-frequency sensor and manufacturing method thereof - Google Patents

High-frequency sensor and manufacturing method thereof Download PDF

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Publication number
CN113866772A
CN113866772A CN202111289770.9A CN202111289770A CN113866772A CN 113866772 A CN113866772 A CN 113866772A CN 202111289770 A CN202111289770 A CN 202111289770A CN 113866772 A CN113866772 A CN 113866772A
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matching layer
glue
layer
arc
piezoelectric ceramic
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Inventor
阴伏星
李佳
张博
蔡东
孙云锴
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Chengdu Huitong West Electronic Co ltd
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Chengdu Huitong West Electronic Co ltd
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S15/00—Systems using the reflection or reradiation of acoustic waves, e.g. sonar systems
    • G01S15/02—Systems using the reflection or reradiation of acoustic waves, e.g. sonar systems using reflection of acoustic waves
    • G01S15/06—Systems determining the position data of a target
    • G01S15/08—Systems for measuring distance only
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S15/00—Systems using the reflection or reradiation of acoustic waves, e.g. sonar systems
    • G01S15/02—Systems using the reflection or reradiation of acoustic waves, e.g. sonar systems using reflection of acoustic waves
    • G01S15/04—Systems determining presence of a target

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Acoustics & Sound (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • General Physics & Mathematics (AREA)
  • Transducers For Ultrasonic Waves (AREA)

Abstract

The invention relates to the technical field of sensors, in particular to a high-frequency sensor and a manufacturing method thereof. The invention also discloses a method for manufacturing the sensor with the arc-shaped structure. The design of the arc structure can ensure that the transmitting sound pressure and the receiving sensitivity of the product are not influenced by forced clamping of the shell wall. The arc-shaped structure is easy to manufacture, simple in process, low in cost and less in consumed time.

Description

High-frequency sensor and manufacturing method thereof
Technical Field
The invention relates to the technical field of sensors, in particular to a high-frequency sensor and a manufacturing method thereof.
Background
The ultrasonic sensor sends out an ultrasonic signal with a certain frequency, receives an echo signal, and obtains the distance between an object causing signal reflection and the sensor through the time difference of sending and receiving the signal, so the scheme is commonly used for foreign body detection or distance detection in the field of artificial intelligence. Generally, the higher the ultrasonic frequency sent by the sensor is, the more beneficial to detecting a near-distance object is, and the higher the sensitivity to the near-distance object is, the faster the intelligent device can perform corresponding processing, so that the frequency of the ultrasonic sensor is continuously increased in the industry to detect the near-distance object.
However, as the frequency increases, the time for the object to be measured to return the echo signal is shorter, and in the limit situation, the residual vibration of the ultrasonic sensor itself has not been finished, the echo signal has arrived, and the residual vibration and the echo signal are superimposed, which may affect the accuracy of distance measurement. Therefore, each manufacturer considers enhancing the echo signal when considering increasing the ultrasonic frequency, and is beneficial to accurately acquiring the echo signal.
Disclosure of Invention
The invention aims to: the high-frequency sensor and the manufacturing method thereof are provided for improving the structure and enhancing the echo signal aiming at the problem that the echo signal is weaker and difficult to extract from the superposed residual vibration and echo signal when the ultrasonic frequency is higher.
In order to achieve the purpose, the invention adopts the technical scheme that:
a high-frequency sensor comprises a shell, a first matching layer, a PCB circuit board, a piezoelectric ceramic piece and a second matching layer, wherein the first matching layer, the PCB circuit board, the piezoelectric ceramic piece and the second matching layer are arranged in the shell, one surface of the first matching layer is connected with the upper bottom surface of the shell, the other surface of the first matching layer is connected with one surface of the PCB circuit board, the other surface of the PCB circuit board is connected with one surface of the piezoelectric ceramic piece, the other surface of the piezoelectric ceramic piece is connected with the second matching layer, the other surface of the second matching layer is used for transmitting ultrasonic signals outwards,
still include damping glue layer, damping glue layer sets up in the outside on second matching layer to be provided with the pitch arc structure on the damping glue layer.
As a preferred embodiment of the present invention, the density of the first matching layer is in the range of 0.7g/cm3-2.0g/cm3。
As a preferable mode of the present invention, it is characterized in that the density of the second matching layer is in the range of 0.4g/cm-3 to 0.8g/cm3。
In a preferred embodiment of the present invention, the material of the second matching layer is one of epoxy material, polyurethane material, rubber, plastic or silicone.
As a preferable scheme of the invention, the arc-shaped structure is an arc line segment in a cross-sectional view of the sensor, and the length of the line segment at two end points of the arc line segment is greater than 1 wavelength of the ultrasonic signal.
As a preferable scheme of the invention, the width of the damping glue layer in the radial direction of the sensor is more than 1.5 wavelengths.
In a preferred embodiment of the present invention, the height of the damping glue layer in the axial direction is 2 wavelengths or more from the rear end surface of the piezoelectric ceramic plate.
As the preferred scheme of the invention, the outer part of the shell is step-shaped, the step-shaped shell is divided into a vertical surface and a horizontal surface, a clamping groove structure is arranged at the joint of the vertical surface and the horizontal surface, and the vertical surface is sunken towards the shell body by the clamping groove structure.
As a preferable aspect of the present invention, the ultrasonic frequencies emitted from the sensors are 300KHz, 350KHz and 400KHz,
when the frequency is 300KHZ, the size of the ceramic chip is 6.5-9mm in diameter, 0.4-0.8mm in thickness, and the thickness of the second matching layer is 1.7-2.5 mm;
when the frequency is 350KHZ, the size of the piezoelectric ceramic sheet is 6-8mm in diameter, 0.5-0.9mm in thickness, and the thickness of the second matching layer is 1.5-2.3 mm;
when the frequency is 400KHZ, the size of the piezoelectric ceramic sheet is 4-6mm in diameter, 0.7-1.5mm in thickness, and the thickness of the second matching layer is 1.0-2.0 mm.
Based on the same conception, the invention also provides a manufacturing method of the high-frequency sensor, and the implementation method of the arc structure comprises the following steps:
A. after the shell, the first matching layer, the PCB, the piezoelectric ceramic piece and the second matching layer are installed, coating a layer of primer in the vibration reduction glue layer, and keeping the primer 3-5mm away from the upper end surface; the upper end face is a plane which is flush with one face of the second matching layer used for transmitting the ultrasonic signals outwards;
B. drying the base glue;
C. coating a layer of glue on the surface of the primer, and keeping the glue surface and the upper end surface level;
D. placing the upper end face upwards, and drying the glue to form an arc-shaped structure of the vibration reduction glue layer;
and C, controlling the glue amount coated by the glue in the step C to realize the adjustment of the shape of the arc-shaped structure.
In conclusion, due to the adoption of the technical scheme, the invention has the beneficial effects that:
1. the arc-shaped structure is arranged in the vibration reduction glue layer on the outer side of the second matching layer, the transmitting sound pressure and the receiving sensitivity can be free from the influence of forced clamping of the shell wall due to the design of the arc-shaped structure, the strength of a transmitting signal and an echo signal is enhanced, and the accuracy of short-distance measurement is improved when an ultrasonic sensor is used for high-frequency distance measurement.
2. The dead weight of glue is utilized when the vibration reduction glue layer is coated to form the depression on the surface, so that an arc-shaped structure is formed, the process is easy to realize, the glue amount is reduced, and the cost is reduced.
3. The fundamental reason for influencing the sensitivity of the second matching layer and the bandwidth of the ultrasonic signal is the matching of the acoustic impedance of the second matching layer material and the air, and the density range of the second matching layer material under the optimal acoustic impedance matching for the air is obtained through calculation, and the density range of the first matching layer is also given, so that the selection of the material is facilitated.
4. The thickness of the vibration-damping glue on the two sides has a preset thickness range and a preset height range, the height of the vibration-damping glue layer in the axial direction is more than 2 wavelengths of the rear end face of the piezoelectric ceramic piece, and vibration reflection signals with more than 2 wavelengths can be fully absorbed.
5. The clamping groove is added to the structure of the ultrasonic sensor, the clamping groove is not only used for connecting components, but also used for solving the problem that glue overflows when the glue is too much during bonding, in the bonding process, the glue which overflows can be extruded into the clamping groove and cannot overflow to the outside, and the problem that the mounting steps are complex due to the fact that the glue overflows in the mounting process is reduced through the design.
6. Based on the structure of this case, still specifically given the ultrasonic frequency and be 300KHz, 350KHz and 400KHz under, the matching value of piezoceramics piece size and second matching layer thickness, the lectotype when being convenient for assemble.
Drawings
FIG. 1 is a structural view of a high-frequency sensor in embodiment 1 of the invention;
fig. 2 is a side view of a high frequency sensor in embodiment 1 of the present invention;
FIG. 3 is an enlarged side view of the arc-shaped structure in example 1 of the present invention;
FIG. 4 is a side perspective view of a 45 lower arc configuration in accordance with example 1 of the present invention;
FIG. 5 is a bottom perspective view of a bottom-view lower arc-shaped structure in accordance with example 1 of the present invention;
FIG. 6 is a bottom view of the arc structure at bottom view in example 1 of the present invention;
fig. 7 is a second side perspective view of the high frequency sensor in embodiment 1 of the present invention;
fig. 8 is a perspective side view of a high-frequency sensor in embodiment 1 of the present invention;
fig. 9 is a schematic view of a sensor according to the present invention in example 2 in which the glue is placed face up.
Reference numerals: the circuit board comprises 1-terminal wires, 2-epoxy resin glue, 3-AB double-component glue, 4-negative electrode filament-wrapped wire, 5-232 glue, 6-sealant, 7-small plastic shell, 8-positive electrode filament-wrapped wire, 9-PCB circuit board, 10-piezoelectric ceramic plate, 11 matching layer glue and 12-arc structure.
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings.
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Example 1
The utility model provides a high-frequency sensor, which comprises a housin, first matching layer, the PCB circuit board, piezoceramics piece and second matching layer set up in the casing, the one side on first matching layer is pasted with the casing and is leaned on, the another side and the PCB circuit board upper surface on first matching layer are pasted and lean on, and the lower surface of PCB circuit board is pasted and is leaned on with the upper surface of piezoceramics piece, the lower surface and the second matching layer of piezoceramics piece lean on, the another side on second matching layer is used for outwards transmitting ultrasonic signal, and the another side and the casing junction on second matching layer have the arc structure. Still include damping glue layer, damping glue layer set up in the outside on second matching layer to be provided with the pitch arc structure on the damping glue layer.
Specifically, the internal structure diagram of the high-frequency sensor is shown in fig. 1, the epoxy resin glue 2 on the upper bottom surface and the circumferential surface forms a cylindrical cavity, the cylindrical cavity is a shell, the shell is used for accommodating a first matching layer, a PCB circuit board, a piezoelectric ceramic sheet and a second matching layer, the AB double-component glue 3 (namely the first matching layer) is attached to the inner side of the upper bottom surface, the AB double-component glue 3 is thick and mainly used for absorbing upward ultrasonic signals of the piezoelectric ceramic sheet, so that the ultrasonic signals are intensively transmitted from the second matching layer to the outside, the next layer attached to the AB double-component glue 3 is a PCB circuit board 9, the PCB circuit board 9 is mainly used for providing a power supply and a matching circuit for the piezoelectric ceramic sheet 10, the lower surface of the PCB circuit board 9 is coated with a layer of 232 glue 5, the upper surface of the piezoelectric ceramic sheet 10 is attached to the PCB circuit board 9 through the 232 glue 5, the lower surface of the piezoelectric ceramic sheet 10 is coated with a layer of matching glue, after the matching glue is solidified, a second matching layer is formed, the side view and the inner structure of the assembled high-frequency sensor are shown in figure 1, and the side view of the outer part of the high-frequency sensor is shown in figure 2.
The terminal wire 1 penetrates through the upper bottom surface and is used for introducing an external power supply into the PCB 9, so that the piezoelectric ceramic piece 10 has a stable working power supply, and the negative wire covered wire 4 and the positive wire covered wire 8 are used for inputting the power supply on the PCB 9 into the piezoelectric ceramic piece 10.
As the preferred scheme, fix first matching layer, PCB circuit board, piezoceramics piece and second matching layer in little plastic shell 7, constitute a monomer, then put the monomer into the casing for the equipment is more convenient high-efficient.
Further, the density range of the second matching layer determines the impedance of the matching glue layer, when the density range of the second matching layer is 0.4g/cm3At-0.8 g/cm, the calculated impedance value is favorable for the sensor to transmit a detection signal outwards by using a high-frequency ultrasonic signal, and the material of the second matching layer can be one selected from epoxy material, polyurethane material, rubber, plastic or organic silicon glue. In addition, the sealant 6 (vibration reduction glue layer) on the outer side of the second matching layer in the shell is provided with an arc-shaped structure 12, and the arc-shaped structure 12 and the acoustic resistance layer form obvious acoustic impedance mismatch, so that the scattering of ultrasonic signals on the surface is effectively increased.
The layer of damping glue outside the second matching layer, i.e. the sealant 6 in fig. 1, is symmetrical on both sides of the second matching layer in side view and the sealant 6 has a width in the radial direction of more than 1.5mm, e.g. a width of more than 1.5 wavelengths at 300Khz frequency, and thus a width of more than 1.5 mm. The height of the sealant 6 in the axial direction is higher than the height of the rear end face of the piezoelectric ceramic piece 10 by more than 2 wavelengths, and the height of the sealant 6 can fully absorb vibration reflection signals with more than 2 wavelengths.
The arc-shaped structure 12 is enlarged from the side view as shown in fig. 3, and the design of the arc-shaped structure 12 can prevent the transmitting sound pressure and the receiving sensitivity from being influenced by forced clamping of the shell wall. The arc-shaped structure is positioned in the area of the sealant 6 in a side view, and is arc-shaped in a cross-sectional view of the sensor, and the distance between two end points of the arc is more than 1 wavelength of an ultrasonic signal output by the sensor. Because the external diameter of the arc-shaped structure is larger than 1 wavelength of the ultrasonic signal output by the sensor, the ultrasonic signal can be prevented from forming diffuse reflection at the concave layer on the surface of the arc-shaped structure, and echo interference is reduced, so that the product sensitivity is not influenced by clutter interference. When the sensor is manufactured, the shell is turned upside down, the opening is upward, materials are sequentially filled into the shell, the small plastic shell 7 is further inserted into the shell, the AB double-component glue 3, the cathode wire covered wire 4, the 232 glue 5, the anode wire covered wire 8, the PCB circuit board 9, the piezoelectric ceramic piece 10 and the matching layer glue 11 are all located in the small plastic shell 7, and the sensor is convenient to install and fix during filling. The part between the outer part of the small plastic shell and the shell is used for filling sealing glue, when the sealing glue is in a liquid state when being filled, an arc structure 12 is formed on the surface due to the action of gravity, when the sensors are used for filling the sealing glue, the formed arc structures are consistent as long as the weight of the sealing glue is consistent, and after the sealing glue is solidified, a layer of groove with an arc-shaped section is formed on the surface. The clamping influence of the adhesive tape layer on the vibration of the second matching layer is reduced through the arc-shaped structure. If the arc structure is planar, the second matching layer 11 can be directly transmitted to the plane of the sealant 6 through the small plastic shell 7, the side surface is thick, the influence of side wall clamping is large, after the arc structure is changed into, the side surface is thick and thin, the influence of side wall clamping is small, and the transmission of vibration signals is facilitated.
Fig. 4 is a side perspective view of the arcuate structure at an angle of 45 deg., and fig. 5 is a bottom perspective view of the arcuate structure at a bottom angle, as seen in fig. 4 and 5, in a perspective view of the arcuate structure being a groove in the sealant 6 having a semicircular cross-section. The bottom view bar of the arc structure at bottom view angle is shown in fig. 6.
The outer part of the shell of the high-frequency sensor is step-shaped, and the second side view of the high-frequency sensor is shown in FIG. 7; a perspective side view of the high frequency sensor is shown in fig. 8. As can be seen from fig. 7 and 8, the step-shaped shell is divided into a vertical surface and a horizontal surface, a clamping groove structure is arranged at the joint of the vertical surface and the horizontal surface, the vertical surface is sunken towards the inside of the shell by the clamping groove structure, and the sunken part can be a single or multiple circular ring structure or a thread structure. In the process that the high-frequency sensor is installed on other products, the clamping groove is used for buckling connection between components and solving the problem that glue overflows due to excessive glue during adhesion, the excessive glue can be squeezed into the clamping groove in the adhesion process and cannot overflow to the outside, and the problem that installation steps are complex due to overflow of the glue in the installation process is solved due to the design.
On the basis of the high-frequency sensor structure shown in fig. 1, the ultrasonic frequency emitted by the sensor is designed to be 300KHz, 350KHz and 400KHz, and when the frequency is preferably 300KHz, 350KHz and 400KHz, the sizes of the ceramic chip and the glue of the second matching layer are matched as follows:
1) when the frequency is 300KHZ, the size of the ceramic chip is 6.5-9mm in diameter, 0.4-0.8mm in thickness, and the thickness of the second matching layer is 1.7-2.5 mm;
2) when the frequency is 350KHZ, the size of the ceramic chip is 6-8mm in diameter, 0.5-0.9mm in thickness, and the thickness of the second matching layer is 1.5-2.3 mm;
3) when the frequency is 400KHZ, the ceramic chip size is 4-6mm in diameter, 0.7-1.5mm in thickness, and the thickness of the second matching layer is 1.0-2.0 mm.
The fundamental reason for influencing the sensitivity and bandwidth of the air-sound transducer is the serious mismatch between the acoustic impedances of the transducer material (such as PZT) and air, the specific impedances of the transducer material and the air are respectively ZC 1-35 MRAYL and ZA 0.0004MRAYL, a second matching layer with the wavelength of 1/4 is generally used, and when the acoustic impedance is equal to zero
Figure BDA0003334277690000081
At a wavelength of 1/4, the acoustic transmission coefficient is at a maximum, wherein Zc,ZpRespectively, the specific acoustic impedances (specific acoustic impedance is the product of the sound velocity and the density of the material) of the piezoelectric ceramic sheet and the propagation medium. To obtain the best acoustic impedance match, Z is chosen for airc33MRAYL (acoustic specific impedance of piezoelectric ceramic), air ZpWhen the acoustic impedance is 0.0044MRAYL, the acoustic impedance is in
Figure BDA0003334277690000082
And the optimal material density of different materials is between 0.4 and 0.8 g/cubic centimeter through calculation.
Example 2
In the method for manufacturing the high frequency sensor, the arc of the arc structure 12 is completed by the following steps:
A) placing the glue injection surface of the semi-finished product sensor of each component in the installed small plastic shell 7 into a glue dispensing tool, setting the glue dispensing time and the glue dispensing air pressure of a glue dispenser, firstly coating a layer of base glue in a glue layer on the side surface by using a No. 6 needle head, and keeping the glue to be 3-5mm away from the upper end surface. A schematic of a sensor with glue injection side up is shown in fig. 9. The upper end face refers to a plane which is flush with a face of the second matching layer for transmitting the ultrasonic signal to the outside.
B) Placing the product with the glue in a 60-degree oven for 1 hour for airing;
C) and coating a layer of glue on the whole surface of the product, keeping the upper surface and the upper end surface of the glue level, and wiping redundant glue. Or setting glue dispensing time and glue dispensing air pressure by using the method in the step A), and then coating a layer of glue in the glue layer on the side surface by using the No. 6 needle head to keep the upper surface and the upper end surface of the glue level;
D) and repeating the operation mode B), and realizing the arc structure by the gravity influence of the glue in the heating and curing process of the glue.
Particularly, the design of the height parameters of the circular arc can be realized by controlling the quantity of the primer in the step A and the quantity of the glue in the step C), for example, under the conditions that the outer diameter of the sensor is 16mm, the inner diameter of the small plastic shell 7 is 9mm, and the height is 12mm, the weight of the primer of the side glue layer is about 0.15 g, the weight of the cambered glue layer is about 0.05 g, and due to the dead weight, the glue is cured to form the arc-shaped structure of the side glue layer as shown in fig. 4. The weight of the bottom glue and the weight of the cambered surface glue can be finely adjusted, for example, the weight of the bottom glue is 0.17 g, the weight of the cambered surface glue is 0.05 g, or the weight of the bottom glue is 0.15 g, the weight of the cambered surface glue is 0.07 g, and the like, and different cambered surfaces can be manufactured.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.

Claims (10)

1. A high-frequency sensor comprises a shell, a first matching layer, a PCB (printed Circuit Board), a piezoelectric ceramic piece and a second matching layer, wherein the first matching layer, the PCB, the piezoelectric ceramic piece and the second matching layer are arranged in the shell, the high-frequency sensor is characterized in that one side of the first matching layer is connected with the upper bottom surface of the shell, the other side of the first matching layer is connected with one side of the PCB, the other side of the PCB is connected with one side of the piezoelectric ceramic piece, the other side of the piezoelectric ceramic piece is connected with the second matching layer, and the other side of the second matching layer is used for transmitting ultrasonic signals outwards,
still include damping glue layer, damping glue layer set up in the outside on second matching layer, and be provided with the pitch arc structure on the damping glue layer.
2. The high frequency sensor of claim 1, wherein the first matching layer has a density in a range of about 0.7g/cm flash-2.0 g/cm.
3. The high frequency sensor of claim 1, wherein the second matching layer has a density in the range of about 0.4g/cm for thin gauge film and about 0.8g/cm for thin gauge film.
4. A high frequency sensor as in claim 3, wherein said second matching layer is made of one of epoxy, urethane, rubber, plastic or silicone.
5. A high-frequency transducer according to claim 1, characterized in that said arcuate structure is an arc segment in a cross-sectional view of said transducer, and the length of the segment at the two ends of said arc segment is greater than 1 wavelength of said ultrasonic signal.
6. A high frequency sensor as defined in claim 1, wherein said damping glue layer has a width in a radial direction of said sensor of more than 1.5 wavelengths.
7. The high-frequency sensor according to claim 6, wherein the height of the damping glue layer in the axial direction is a height of 2 wavelengths or more at the rear end face of the piezoelectric ceramic plate.
8. A high frequency sensor according to claim 1, wherein the exterior of said housing is stepped, said stepped dividing the housing into a vertical plane and a horizontal plane, and a notch structure is provided at the junction of the vertical plane and the horizontal plane, said notch structure being such that said vertical plane is recessed into said housing.
9. The high-frequency sensor according to any one of claims 1 to 8, wherein the ultrasonic wave emitted from the sensor has a frequency of 300KHz, 350KHz and 400KHz,
when the frequency is 300KHZ, the size of the ceramic chip is 6.5-9mm in diameter, 0.4-0.8mm in thickness, and the thickness of the second matching layer is 1.7-2.5 mm;
when the frequency is 350KHZ, the size of the piezoelectric ceramic sheet is 6-8mm in diameter and 0.5-0.9mm in thickness, and the thickness of the second matching layer is 1.5-2.3 mm;
when the frequency is 400KHZ, the size of the piezoelectric ceramic sheet is 4-6mm in diameter and 0.7-1.5mm in thickness, and the thickness of the second matching layer is 1.0-2.0 mm.
10. A method for manufacturing a high-frequency sensor according to any one of claims 1 to 9, wherein the arc structure is realized by a method comprising the steps of:
A. after the shell, the first matching layer, the PCB, the piezoelectric ceramic piece and the second matching layer are installed, coating a layer of primer in the vibration reduction glue layer, and keeping the primer 3-5mm away from the upper end face; the upper end face is a plane which is flush with one face of the second matching layer used for transmitting the ultrasonic signal outwards;
B. drying the base glue;
C. coating a layer of glue on the surface of the primer, and keeping the glue surface and the upper end surface flat;
D. placing the upper end face upwards, and drying the glue to form an arc-shaped structure of the vibration reduction glue layer;
and C, controlling the glue amount coated by the glue in the step C to realize the adjustment of the shape of the arc-shaped structure.
CN202111289770.9A 2021-11-02 2021-11-02 High-frequency sensor and manufacturing method thereof Pending CN113866772A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115407317A (en) * 2022-08-02 2022-11-29 成都汇通西电电子有限公司 Underwater detection high-frequency ultrasonic sensor, system and robot
CN115825963A (en) * 2022-12-14 2023-03-21 成都汇通西电电子有限公司 Ultrasonic sensor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115407317A (en) * 2022-08-02 2022-11-29 成都汇通西电电子有限公司 Underwater detection high-frequency ultrasonic sensor, system and robot
CN115407317B (en) * 2022-08-02 2023-09-29 成都汇通西电电子有限公司 Underwater high-frequency ultrasonic sensor, system and robot
CN115825963A (en) * 2022-12-14 2023-03-21 成都汇通西电电子有限公司 Ultrasonic sensor
CN115825963B (en) * 2022-12-14 2024-03-15 成都汇通西电电子有限公司 Ultrasonic sensor

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