CN113862088A - Mask cleaning agent for OLED - Google Patents

Mask cleaning agent for OLED Download PDF

Info

Publication number
CN113862088A
CN113862088A CN202111255871.4A CN202111255871A CN113862088A CN 113862088 A CN113862088 A CN 113862088A CN 202111255871 A CN202111255871 A CN 202111255871A CN 113862088 A CN113862088 A CN 113862088A
Authority
CN
China
Prior art keywords
apg
oled
cleaning agent
mask
acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN202111255871.4A
Other languages
Chinese (zh)
Other versions
CN113862088B (en
Inventor
刘小勇
田博
侯琳熙
房龙翔
叶鑫煌
肖小江
刘文生
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujian Youda Environmental Protection Material Co ltd
Original Assignee
Fujian Youda Environmental Protection Material Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujian Youda Environmental Protection Material Co ltd filed Critical Fujian Youda Environmental Protection Material Co ltd
Priority to CN202111255871.4A priority Critical patent/CN113862088B/en
Publication of CN113862088A publication Critical patent/CN113862088A/en
Application granted granted Critical
Publication of CN113862088B publication Critical patent/CN113862088B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/66—Non-ionic compounds
    • C11D1/83—Mixtures of non-ionic with anionic compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/24—Organic compounds containing halogen
    • C11D3/245—Organic compounds containing halogen containing fluorine
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/36—Organic compounds containing phosphorus
    • C11D3/364—Organic compounds containing phosphorus containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/02—Anionic compounds
    • C11D1/12—Sulfonic acids or sulfuric acid esters; Salts thereof
    • C11D1/123—Sulfonic acids or sulfuric acid esters; Salts thereof derived from carboxylic acids, e.g. sulfosuccinates
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/66—Non-ionic compounds
    • C11D1/662—Carbohydrates or derivatives
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Detergent Compositions (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

The invention provides a Mask cleaning agent for OLED, which is prepared by compounding a fluorine-containing organic acid, an organic phosphine chelating agent and an anionic-nonionic surfactant, and can effectively solve the problems that in the prior art, Mask is difficult to clean the surface, edges and openings after Ag/Mg evaporation, so that the product yield and performance are poor, the Mask material is corroded, the service life is shortened and the like.

Description

Mask cleaning agent for OLED
Technical Field
The invention belongs to the field of OLED manufacturing, and particularly relates to a fine metal mask cleaning agent used after Ag/Mg evaporation.
Background
Organic Light Emitting Diodes (OLEDs) have become the third generation of mainstream display technologies due to their characteristics of ultra-high contrast, vivid color, thin profile, high definition, and high refresh rate. Most of the current mainstream OLED screens refer to active driving organic self-emitting diodes (AMOLEDs). From the view of the preparation process of the AMOLED, the key three technologies are: backplane technology, vapor deposition technology, and packaging technology. The vapor deposition technology requires a precise vapor deposition device and also requires a Mask plate (Mask) for vapor deposition, and the Mask determines the height and the size of pixels of the OLED display screen. Mask is a consumable item with high cost and needs to be used repeatedly. In the evaporation process, evaporation materials can be deposited on the Mask, so that the evaporation effect is influenced, and the openings are blocked or even the service life of the Mask is influenced. In the prior art, when the Mask is produced on line, the Mask needs to be cleaned after being used for a plurality of times.
The evaporation is that the evaporated material is evaporated into atoms or molecules by the methods of current heating, electron beam bombardment heating, laser heating and the like in vacuum, and the atoms or molecules move linearly with a larger free path and collide with the surface of the substrate to be condensed to form a film. It can be said that evaporation is an essential part of the OLED manufacturing process. The light-emitting organic material is evaporated on the substrate through the Mask precise opening, the opening of the Mask directly determines the pixel height of the OLED display screen, the smaller the opening is, the higher the pixel is, meanwhile, the smaller the opening is, the easier the organic material is accumulated, and the frequency and the requirement on cleaning are higher.
Currently, the single-layer metal cathode used in the OLED device includes Mg, Li, Ca, Sr, Na, Cs, Gd, and the like. In order to prevent water and oxygen from generating adverse effects on the metal cathode, alloy cathodes such as Ca/Al, Mg/Ag, Al/Li, Sn/Al and Ag/Al are mostly adopted in the process. The alloy cathode Mg/Ag (10: 1) formed by co-steaming metal Mg and metal Ag is most widely applied, and most of Mg which is difficult to clean is Mg due to high Mg content.
Patent CN 112609189 a discloses an electronic stageCH3COOH, electron level H2O2The Ag/Mg cleaning agent for Mask and the cleaning method thereof consist of pure water with the purity of more than 10M omega, but only the cleaning effect of the Mask surface is listed, the cleaning effect on the edge and the opening is not good enough, meanwhile, the addition of hydrogen peroxide brings too strong oxidizability, even if the corrosion inhibitor is added, the corrosion of the Mask is obvious, and the service life of the Mask is influenced. Patent CN 108659997 a impregnates metal ions dissolving Mask surface by forming strong complex of inorganic base or quaternary ammonium base and organic acid at room temperature, but chelating agent has different chelating constant for different metal ions, and actually has limited effect on cleaning Ag/Mg, especially Mg therein.
Disclosure of Invention
In view of the above disadvantages of the prior art, the present invention provides a Mask cleaning agent, which can solve the problems of poor product yield and performance caused by the difficulty in cleaning the surface, edges and openings of Mask after Ag/Mg evaporation in the prior art.
In order to achieve the purpose, the invention adopts the following technical scheme:
a mask cleaning agent for OLED comprises the following raw materials in percentage by mass: 9-11% of organic acid, 10-20% of chelating agent, 10-20% of surfactant and 50-70% of deionized water; the sum of the compositions of all the raw materials is 100 percent.
Wherein the organic acid is fluorine-containing organic acid, in particular perfluoropropionic acid. The fluorinated organic acid has strong electron-withdrawing property and strong acidity in the C-F bond. The perfluoropropionic acid and the salt thereof have higher interfacial activity and are beneficial to cleaning Ag/Mg films attached to the surfaces, edges and openings of the mask.
The chelating agent is an organic phosphine chelating agent, and specifically is one or more of triethylene tetramine hexamethylene phosphonic acid (TETHMP), diethylenetriamine pentamethylene phosphonic acid (DTPMPA) and ethylene diamine tetramethylene phosphonic acid (EDTMPS). The organic phosphine chelating agents have excellent chelating performance and can react with Mg2+Form stable chelate, high thermal stability, easy biodegradation, high safety and no environmental pollution.
The surfactant is a surfactant compounded by alkyl glycoside (APG) and alkyl glycoside sulfosuccinate ester salt (APG-SS), and when the compounding molar ratio is APG: the APG-SS can be 3:7, 2:8 and 1:9, wherein the proportioning effect of 2:8 is optimal. The APG-SS and the APG can form an anion-nonionic compound effect, and a better synergistic effect is brought. APG: the APG-SS surfactant can reduce the surface tension of APG and improve the surface performance of APG when mixed in any proportion.
The deionized water has a resistivity of not less than 18M omega at 25 ℃.
The preparation method of the mask cleaning agent comprises the steps of adding deionized water into a stirring kettle at normal temperature, adding perfluoropropionic acid at the rotating speed of 30r/min, adjusting the rotating speed to 60r/min after adding the perfluoropropionic acid, sequentially adding AGP-SS, APG and a chelating agent (adding the next material after each material is added and stirring until the system is clear), continuing stirring for 30 minutes after all the materials are added, and filtering by a filter element with the aperture of 5 mu m and the aperture of 1 mu m in sequence to obtain the mask cleaning agent.
The invention has the following remarkable advantages: the fluorine-containing organic acid is selected in the Mask plate cleaning agent, so that the interfacial reaction activity of the acid and Ag/Mg is effectively improved, and an Ag/Mg film on a Mask can be effectively and quickly removed; by adding the preferable organic phosphine chelating agent, the chelating property to Mg ions is effectively improved, the problem of incomplete cleaning or secondary pollution caused by a large amount of Mg ions in the prior cleaning is solved, the surface tension is effectively reduced by the excellent synergistic effect of the anion-nonionic compound surfactant of the compound alkyl glycoside and the alkyl glycoside derivative, and the cleaning rate of the Ag/Mg film at the edges and the openings of the Mask is obviously improved. And the product is used without influencing the existing Mask cleaning process, the production yield can be effectively improved, and the production cost of enterprises is reduced.
Detailed Description
In order to make the present invention more comprehensible, the technical solutions of the present invention are further described below with reference to specific embodiments, but the present invention is not limited thereto.
The experimental methods used in the examples are all conventional methods unless otherwise specified.
The materials, reagents and the like used in the examples are commercially available unless otherwise specified.
The preparation method comprises the steps of adding deionized water into an experimental kettle at normal temperature, adding perfluoropropionic acid at the rotating speed of 30r/min, adjusting the rotating speed to 60r/min after the addition is finished, sequentially adding AGP-SS, APG and a chelating agent (adding the next material after each material is added and stirred until the system is clear), continuing stirring for 30 minutes after all the materials are added, and filtering by a filter element with the aperture of 5 mu m and the aperture of 1 mu m in sequence to obtain the mask cleaning agent.
TABLE 1 compositions and dosage tables in mask cleaners
Figure DEST_PATH_IMAGE002
Brief description of the materials:
triethylene tetramine hexamethylene phosphonic acid (TETHMP)
Diethylenetriamine penta (DTPMPA)
Ethylenediaminetetramethylenephosphonic acid (EDTMPS)
Alkyl glycosides (APG)
Alkyl glycoside sulfosuccinate salt (APG-SS)
Ethylenediaminetetraacetic acid tetrasodium salt (EDTA-4 Na)
Alkylphenol ethoxylates (Tx-10)
Potassium lauryl ether phosphate (MAEPK)
The above materials are all commercially available.
The performance of the cleaning agent prepared in the examples and the comparative examples is evaluated, and the specific test method comprises the following steps:
firstly, detecting and cleaning capability by an optical microscope
And (4) testing the Mask cleaning capability of the cleaning agent, wherein whether the surface, the edge and the open pore are cleaned or not is observed through a microscope. The specific detection method comprises the following steps:
diluting the cleaning agent with deionized water to 20% water solution, adding into an ultrasonic cleaning tank, and heating to 30 deg.C. Setting ultrasonic frequency of ultrasonic cleaning tank as 60KHz, ultrasonic energyThe mass density is 35w/inch2. And vertically placing the Mask subjected to Mg/Ag evaporation on a cleaning frame, immersing the cleaning frame in an ultrasonic cleaning tank, and performing ultrasonic cleaning for 40 min.
After the cleaning, three water-washing ultrasonic tanks are set to have the ultrasonic frequency of 60KHz and the ultrasonic energy density of 35w/inch2Ultrasonic washing with deionized water at normal temperature for 3 times, each time for 5 min.
After washing, the Mask is placed in an isopropanol tank to remove water, cleaned and dried, and then detected.
Whether metal remained on the Mask surface, edges and openings was analyzed by Scanning Electron Microscope (SEM). The criteria are as follows:
o: Mg/Ag film is completely cleaned
X: Mg/Ag film residue
The Mg/Ag residual content on the Mask surface is detected by X-ray energy spectrum analysis (EDS) and compared with the initial content. The criteria are as follows:
o: the Mg/Ag removal rate is more than 90 percent
The removal rate of Mg/Ag is more than 75 percent and less than 90 percent
X: the Mg/Ag removal rate is less than 75 percent
Secondly, corrosion determination:
the Mask is made of invar (invar), and the cleaning agent is acidic and can corrode to a certain extent after long-term use, so that the service life of the Mask is determined by the corrosion degree. The specific detection method comprises the following steps:
300mL of 20% aqueous solution of cleaning agents with different formulas is respectively filled into 500mL glass cups, Mask small samples with constant weight are weighed, a sealing ring cover is added to prevent water from volatilizing, after the glass cups are soaked for 1 week at room temperature, pure water is used for washing, IPA is used for dehydration, and the weight is weighed again after the glass cups are dried to be constant weight. The criteria, judged by weighing the weight change ratio twice, are as follows:
o: essentially no corrosion (weight loss < 0.05%)
And (delta): slight corrosion (0.05% < weight loss < 0.01%)
X: has corrosion (weight loss rate is more than 0.01%)
The test results are shown in table 2.
Table 2 cleaning agent performance test results
Figure DEST_PATH_IMAGE004
As can be seen from the comparison between the examples and the comparative examples, the cleaning performance evaluation is adversely affected when the components are out of the range. Meanwhile, perfluoropropionic acid is more effective in cleaning edges with poor ultrasonic action and fine holes due to strong electron withdrawing property and excellent interface activity of C-F bonds; the chelating ability of other chelating agents to Mg ions is obviously lower than that of the selected 3 chelating agents, so that the cleaning effect of Mask can be influenced due to unclean cleaning and secondary pollution, and the excess of EDS detection ion residues can be caused; the compounding ratio of AGP and APG-SS is also important, and the best cleaning effect can be achieved only within a proper ratio range; in the comparative example, it can be seen that the cleaning effect of other nonionic and anionic surfactants and anion-nonionic combination is difficult to meet the process requirements.
Based on the distribution ratio data of the components in example 2, the surface tension of different mixed solutions is continuously measured by a K12 type surface tension meter hanging piece at 20 ℃, the experimental data is measured in a cleaning agent system, the surface tension of the system is directly influenced by adding an organic acid and a chelating agent into the cleaning system, and the experimental data is different from the data measured by directly compounding APG and APG-SS. From the experimental data it can be seen that: APG: the APG-SS surfactant can reduce the surface tension of APG and improve the surface performance of APG when mixed in any proportion. When in usenAPG∶nThe synergistic effect is better when APG-SS = 2: 8. When the content of APG-SS is increased to a certain amount, the change in surface tension is small. This is probably because the APG-SS molecules are "inserted" into the APG molecules when the APG and APG-SS form mixed micelles, reducing the electrostatic repulsion between APG head groups, reducing the charge density on the micelle surface, and enhancing the micelle-forming ability. The number of molecules of APG-SS determines the ability to reduce electrostatic repulsion, and when the number of APG reaches a certain amount, the effect of reducing the surface charge density of micelles is weakened.
TABLE 3 influence of different surfactant formulations in mask cleaners on surface tension
Figure DEST_PATH_IMAGE006
The above description is only a preferred embodiment of the present invention, and not intended to limit the scope of the claims, and all equivalent component changes that can be directly or indirectly applied to other related technical fields using the content of the present invention are also included in the scope of the present invention.

Claims (6)

1. The mask cleaning agent for the OLED is characterized by comprising the following raw materials in percentage by mass: 9-11% of organic acid, 10-20% of chelating agent, 10-20% of surfactant and 50-70% of deionized water; the sum of the components of all the raw materials is 100 percent;
wherein the organic acid is perfluoropropionic acid;
wherein the surfactant is a surfactant compounded by alkyl glycoside APG and alkyl glycoside sulfosuccinate ester salt APG-SS.
2. The mask cleaning agent for OLED according to claim 1, wherein the ratio of APG: the compounding molar ratio of APG-SS is one of 3:7, 2:8 and 1: 9.
3. The mask cleaning agent for OLED according to claim 1, wherein the ratio of APG: the compounding molar ratio of APG-SS is 2: 8.
4. The mask cleaning agent for the OLED, according to claim 1, characterized in that: the chelating agent is one or more of triethylene tetramine hexamethylene phosphonic acid, diethylenetriamine pentamethylene phosphonic acid and ethylene diamine tetramethylene phosphonic acid.
5. The mask cleaning agent for the OLED, according to claim 1, characterized in that: the deionized water has a resistivity of not less than 18M omega at 25 ℃.
6. The mask cleaning agent for the OLED, according to claim 1, characterized in that: the preparation method comprises the steps of adding deionized water into a stirring kettle at normal temperature, adding perfluoropropionic acid at the rotating speed of 30r/min, adjusting the rotating speed to 60r/min after adding the perfluoropropionic acid, sequentially adding AGP-SS, APG and a chelating agent, stirring each material after adding until the system is clear, adding the next material, continuing stirring for 30 minutes after all the materials are added, and filtering the materials by filter elements with the aperture of 5 mu m and the aperture of 1 mu m in sequence to obtain the perfluoropropionic acid water-based paint.
CN202111255871.4A 2021-10-27 2021-10-27 Mask cleaning agent for OLED Active CN113862088B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202111255871.4A CN113862088B (en) 2021-10-27 2021-10-27 Mask cleaning agent for OLED

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202111255871.4A CN113862088B (en) 2021-10-27 2021-10-27 Mask cleaning agent for OLED

Publications (2)

Publication Number Publication Date
CN113862088A true CN113862088A (en) 2021-12-31
CN113862088B CN113862088B (en) 2023-11-10

Family

ID=78997971

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202111255871.4A Active CN113862088B (en) 2021-10-27 2021-10-27 Mask cleaning agent for OLED

Country Status (1)

Country Link
CN (1) CN113862088B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115926894A (en) * 2023-01-03 2023-04-07 福建省佑达环保材料有限公司 Organic luminescent material cleaning agent and cleaning method

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001005921A1 (en) * 1999-07-15 2001-01-25 Rhodia Chimie Use of an amphoteric polymer for treating a hard surface
WO2006129538A1 (en) * 2005-06-01 2006-12-07 Nissan Chemical Industries, Ltd. Semiconductor wafer cleaning composition containing phosphonic acid and method of cleaning
CA2590507A1 (en) * 2007-05-25 2008-11-25 The Clorox Company Antimicrobial composition for cleaning substrate
WO2013162020A1 (en) * 2012-04-27 2013-10-31 和光純薬工業株式会社 Cleaning agent for semiconductor substrates and method for processing semiconductor substrate surface
WO2017054076A1 (en) * 2015-09-28 2017-04-06 Dalhousie University Polyphosphate glass microspheres, methods of making and uses thereof
CN111172550A (en) * 2020-02-14 2020-05-19 福建省佑达环保材料有限公司 OLED mask cleaning agent and cleaning process thereof
CN111234939A (en) * 2020-03-16 2020-06-05 晋传华 Optical glass cleaning agent

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001005921A1 (en) * 1999-07-15 2001-01-25 Rhodia Chimie Use of an amphoteric polymer for treating a hard surface
WO2006129538A1 (en) * 2005-06-01 2006-12-07 Nissan Chemical Industries, Ltd. Semiconductor wafer cleaning composition containing phosphonic acid and method of cleaning
CA2590507A1 (en) * 2007-05-25 2008-11-25 The Clorox Company Antimicrobial composition for cleaning substrate
WO2013162020A1 (en) * 2012-04-27 2013-10-31 和光純薬工業株式会社 Cleaning agent for semiconductor substrates and method for processing semiconductor substrate surface
WO2017054076A1 (en) * 2015-09-28 2017-04-06 Dalhousie University Polyphosphate glass microspheres, methods of making and uses thereof
CN111172550A (en) * 2020-02-14 2020-05-19 福建省佑达环保材料有限公司 OLED mask cleaning agent and cleaning process thereof
CN111234939A (en) * 2020-03-16 2020-06-05 晋传华 Optical glass cleaning agent

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
陈宝明等: "高效手性除草剂氰氟草酯清洁生产技术", 世界农药, vol. 42, pages 1 - 2 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115926894A (en) * 2023-01-03 2023-04-07 福建省佑达环保材料有限公司 Organic luminescent material cleaning agent and cleaning method
CN115926894B (en) * 2023-01-03 2024-06-04 福建省佑达环保材料有限公司 Organic luminescent material cleaning agent and cleaning method

Also Published As

Publication number Publication date
CN113862088B (en) 2023-11-10

Similar Documents

Publication Publication Date Title
US8759231B2 (en) Silicon texture formulations with diol additives and methods of using the formulations
KR900000739B1 (en) Etchant composition
US5571447A (en) Stripping and cleaning composition
US7507350B2 (en) Etching liquid composition
US20120295447A1 (en) Compositions and Methods for Texturing of Silicon Wafers
US20020072482A1 (en) Polycarboxylates-based aqueous compositions for cleaning of screening apparatus
CN103038311B (en) The method on aqueous alkaline etching and cleaning compositions and process silicon substrate surface
CN113528253B (en) Composition for cleaning LiF material on surfaces of OLED mask and crucible
TW200927914A (en) Cleaning agent for electronic materials and method for cleaning
CN110234719A (en) For the composition and method from surface removal cerium oxide particles
TW201313894A (en) Aqueous alkaline compositions and method for treating the surface of silicon substrates
WO1996000316A1 (en) Non-silicated soft metal safe product
CN113862088A (en) Mask cleaning agent for OLED
CN113004980B (en) Composition for cleaning OLED mask and crucible
JP4582294B2 (en) Lead-tin alloy solder plating solution
CN115074743B (en) Composition for cleaning cathode material LiF on surface of OLED mask
EP0728180A1 (en) Additive for use in glass-bottle washing and its use in decreasing glass corrosion
CN118639306A (en) Electrolytic cleaning liquid for OLED precise metal mask plate
TW201615803A (en) Etching liquid for semiconductor substrate
CN117187852B (en) Preparation method of low-surface-tension long-acting developer
CN117926381A (en) Electrolytic cleaning agent composition for cleaning OLED fine metal mask
KR101736949B1 (en) Solution composition for selectively cleaning indium zinc oxide(izo) of mask deposited with elecrote material
CN112725803B (en) Titanium etching solution for wafer level packaging
KR101553545B1 (en) Cleaning Solution Composition for Cleaning Silver and Copper
CN116286216A (en) Composition for preparing environment-friendly cleaning agent, and preparation method and application thereof

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant