CN113856671B - Preparation method of Z-type heterojunction photocatalyst containing S vacancy - Google Patents

Preparation method of Z-type heterojunction photocatalyst containing S vacancy Download PDF

Info

Publication number
CN113856671B
CN113856671B CN202110987035.9A CN202110987035A CN113856671B CN 113856671 B CN113856671 B CN 113856671B CN 202110987035 A CN202110987035 A CN 202110987035A CN 113856671 B CN113856671 B CN 113856671B
Authority
CN
China
Prior art keywords
bivo
znin
solution
vacancy
preparation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202110987035.9A
Other languages
Chinese (zh)
Other versions
CN113856671A (en
Inventor
夏盛杰
张冠华
倪哲明
谢波
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zhejiang University of Technology ZJUT
Original Assignee
Zhejiang University of Technology ZJUT
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zhejiang University of Technology ZJUT filed Critical Zhejiang University of Technology ZJUT
Priority to CN202110987035.9A priority Critical patent/CN113856671B/en
Publication of CN113856671A publication Critical patent/CN113856671A/en
Application granted granted Critical
Publication of CN113856671B publication Critical patent/CN113856671B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
    • B01J23/16—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of arsenic, antimony, bismuth, vanadium, niobium, tantalum, polonium, chromium, molybdenum, tungsten, manganese, technetium or rhenium
    • B01J23/20—Vanadium, niobium or tantalum
    • B01J23/22—Vanadium
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J27/00—Catalysts comprising the elements or compounds of halogens, sulfur, selenium, tellurium, phosphorus or nitrogen; Catalysts comprising carbon compounds
    • B01J27/02—Sulfur, selenium or tellurium; Compounds thereof
    • B01J27/04—Sulfides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J35/00—Catalysts, in general, characterised by their form or physical properties
    • B01J35/30—Catalysts, in general, characterised by their form or physical properties characterised by their physical properties
    • B01J35/39—Photocatalytic properties
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01C—AMMONIA; CYANOGEN; COMPOUNDS THEREOF
    • C01C1/00—Ammonia; Compounds thereof
    • C01C1/02—Preparation, purification or separation of ammonia
    • C01C1/026—Preparation of ammonia from inorganic compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P20/00—Technologies relating to chemical industry
    • Y02P20/50—Improvements relating to the production of bulk chemicals
    • Y02P20/52—Improvements relating to the production of bulk chemicals using catalysts, e.g. selective catalysts

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Catalysts (AREA)

Abstract

BiVO containing S vacancy 4 /S V ‑ZnIn 2 S 4 The preparation method of the Z-type heterojunction photocatalyst comprises the following steps: adding glycerol into an HCl aqueous solution with pH value of 2-2.5, and stirring for 10-20 min to obtain a solution A; znCl is added into the solution A 2 、InCl 3 ·4H 2 O, thioacetamide and BiVO 4 Ultrasonic treatment is carried out for 15-30 min, and stirring is carried out for 10-20 min to obtain solution B; stirring the obtained solution B at 80-85 ℃ for reaction for 120-150 min, centrifuging, washing and drying to obtain a target product; the preparation method is simple, only simple hydrothermal synthesis is needed, and the synthesized BiVO 4 /S V ‑ZnIn 2 S 4 Specific pure phase BiVO 4 And pure phase ZnIn 2 S 4 The catalyst has higher light absorption performance and carrier separation efficiency, and high photocatalytic synthesis ammonia activity.

Description

Preparation method of Z-type heterojunction photocatalyst containing S vacancy
Technical Field
The invention relates to a BiVO containing S vacancy 4 /S V -ZnIn 2 S 4 A preparation method of a Z-type heterojunction photocatalyst.
Background
Ammonia (NH) 3 ) As one of the largest industrial synthetic chemicals in the world, it has been widely used in the fields of agriculture, chemical industry, medicine, etc. Currently, the industrial synthesis of ammonia is entirely dependent on the high energy-consuming Haber-Bosch process. Due to N 2 The natural inertness of the molecules, the Haber-Bosch process, requires that it be carried out under severe conditions of high temperature (400-600 ℃) and high pressure (20-40 MPa)And (3) reacting. The photocatalytic ammonia synthesis technology is expected to be a new method for replacing the Haber-Bosch process. This is because the process uses inexhaustible solar energy and water to power the synthesis of ammonia. However, intrinsic photocatalysts tend to exhibit poor ammonia synthesis activity due to their high carrier recombination efficiency. In this regard, we need to modify the intrinsic photocatalyst appropriately to obtain more photo-generated electrons to participate in the ammonia synthesis reaction. A great deal of researches show that the construction of the heterojunction is a method for effectively improving the separation efficiency of the intrinsic semiconductor carrier and generating more photo-generated electrons. In particular to a Z-type heterojunction system which can generate a large amount of photo-generated carriers, and can also furthest improve the oxidation/reduction potential of the heterojunction system, thereby ensuring the precondition of reaction thermodynamics, which is the characteristic not possessed by other types of heterojunction.
However, there are reports on the Z-type heterojunction photocatalytic synthesis of ammonia, but the activity of ammonia synthesis is still low. The root cause is the injection of photo-generated electrons in the Z-type heterojunction into N 2 The efficiency of the molecule is very low. Thus, the key to solving this bottleneck is how to build up a large number of effective active sites on the active component surface of the Z-type heterojunction catalyst, in the heterojunction system and N 2 An effective electron transfer bridge is established between the reduction reaction systems, and a large amount of photo-generated electrons generated by the Z-type heterojunction are effectively transported to N 2 And (3) reduction reaction. Numerous studies have reported that defect engineering is a very effective means of increasing the active sites on the catalyst surface. Researchers have developed a number of defective photocatalytic materials for photocatalytic synthesis of ammonia reactions, such as oxygen-defective Bi 5 O 7 Br and TiO 2 Zn containing S defect 0.1 Sn 0.1 Cd 0.8 S and MoS 2 . The above study shows that the defect site can not only effectively adsorb N 2 Molecules which promote the generation of photo-generated electrons from the catalyst to N 2 Transfer of molecules.
Therefore, if a vacancy is constructed in the active component in the Z-type heterojunction, that is, the vacancy is used as a bridge for electron transfer, the photogenerated electrons can be effectively promoted from the surface of the catalyst to N 2 MoleculesThereby improving the activity of photocatalytic synthesis of ammonia. In this system, the Z-heterojunction is N 2 Reduction provides a driving force, i.e., generates a large number of photo-generated electrons; and the vacancy is the photo-generated electron direction N 2 The injection provides a channel.
Disclosure of Invention
The invention aims to provide a BiVO containing S vacancy 4 /S V -ZnIn 2 S 4 A preparation method of a Z-type heterojunction photocatalyst. The BiVO is prepared by a hydrothermal method 4 Then ZnIn is added 2 S 4 In-situ growth of nanoplatelets to BiVO 4 The surface can be prepared into BiVO containing S vacancy 4 /S V -ZnIn 2 S 4 Z-type heterojunction photocatalysts.
The technical scheme of the invention is as follows:
BiVO containing S vacancy 4 /S V -ZnIn 2 S 4 The preparation method of the Z-type heterojunction photocatalyst comprises the following steps:
(1) Adding glycerol into an HCl aqueous solution with pH value of 2-2.5, and stirring for 10-20 min to obtain a solution A;
in the solution A, the volume fraction of glycerol is 20-25%, and the volume fraction of HCl aqueous solution is 75-80%;
(2) Adding ZnCl into the solution A obtained in the step (1) 2 、InCl 3 ·4H 2 O, thioacetamide and BiVO 4 Ultrasonic treatment is carried out for 15-30 min, and stirring is carried out for 10-20 min to obtain solution B;
the ZnCl 2 、InCl 3 ·4H 2 The ratio of the amounts of O and thioacetamide is 1:1:2;
the ZnCl 2 The concentration in the solution B is 0.05-0.075 mmol/mL;
the BiVO 4 The concentration in the solution B is 2.5-5 mg/mL;
(3) Stirring the solution B obtained in the step (2) at 80-85 ℃ for reaction for 120-150 min, centrifuging, washing (with deionized water), and drying to obtain BiVO containing S vacancies 4 /S V -ZnIn 2 S 4 Z-type heterojunction photocatalyst;
the drying is carried out in a vacuum drying oven at 60-80 ℃ for 8-12 h.
In the present invention, the "solution a" and "solution B" have no special meaning, and the labels "a" and "B" are only used to distinguish the solutions obtained in the different steps.
BiVO containing S vacancy prepared by the invention 4 /S V -ZnIn 2 S 4 The Z-type heterojunction photocatalyst can be applied to photocatalytic synthesis of ammonia.
The invention has the advantages that:
the preparation method is simple, and only simple hydrothermal synthesis is needed. Synthetic BiVO 4 /S V -ZnIn 2 S 4 Specific pure phase BiVO 4 And pure phase ZnIn 2 S 4 The catalyst has higher light absorption performance and carrier separation efficiency, and high photocatalytic synthesis ammonia activity.
Drawings
FIG. 1 shows BiVO in example 1 4 Is a XRD pattern of (C).
FIG. 2 is ZnIn of example 2 2 S 4 Is a XRD pattern of (C).
FIG. 3 is BiVO in example 3 4 /S V -ZnIn 2 S 4 Is a XRD pattern of (C).
FIG. 4 is BiVO in example 1 4 SEM images of (a).
FIG. 5 is a view of ZnIn in example 2 2 S 4 SEM images of (a).
FIG. 6 is BiVO in example 3 4 /S V -ZnIn 2 S 4 SEM images of (a).
FIG. 7 is BiVO in example 3 4 /S V -ZnIn 2 S 4 Is a mapping graph of (a).
FIG. 8 shows BiVO in examples 1, 2 and 3 4 、ZnIn 2 S 4 And BiVO 4 /S V -ZnIn 2 S 4 Ultraviolet-visible diffuse reflectance spectrum of (c).
FIG. 9 shows ZnIn of examples 2 and 3 2 S 4 And BiVO 4 /S V -ZnIn 2 S 4 Electron paramagnetic resonance characterization of (c).
FIG. 10 shows BiVO in examples 1, 2 and 3 4 、ZnIn 2 S 4 And BiVO 4 /S V -ZnIn 2 S 4 Photo current characterization graph.
FIG. 11 shows BiVO in examples 1, 2 and 3 4 、ZnIn 2 S 4 And BiVO 4 /S V -ZnIn 2 S 4 Is a graph of activity data of photocatalytic ammonia synthesis.
Detailed Description
The present invention is further described below by way of specific examples, but the scope of the present invention is not limited thereto.
Example 1:
BiVO 4 is prepared by the following steps:
to contain 50mL of diluted HNO 3 (2 mol/L) of Bi (NO) 3 ) 3 ·5H 2 O (2.370 g,6 mmol) and NH 4 VO 3 (0.709 g,6 mmol) and stirred for 10min. Ammonia was then added dropwise to the solution until ph=2. Transferring the mixture into a teflon reaction kettle, reacting for 120min at 180 ℃, centrifugally washing, and drying in a vacuum drying oven at 60 ℃ for 24h to obtain BiVO 4 。
Example 2:
ZnIn 2 S 4 is prepared by the following steps:
ZnCl 2 (0.2726g，2mmol)、InCl 3 ·4H 2 O (1.1727 g,4 mmol) and thioacetamide (0.6024 g,8 mmol) were sonicated in 20mL ethylene glycol and stirred for 60min. The mixture was then poured into a teflon autoclave and heated at 80 ℃ for 120min. Naturally cooling to room temperature after the reaction is finished, washing the obtained precipitate with absolute ethyl alcohol for 3 times, and drying overnight in a vacuum drying oven at 60 ℃, wherein a sample is recorded as ZnIn 2 S 4 。
Example 3:
BiVO containing S vacancy 4 /S V -ZnIn 2 S 4 Is prepared by the following steps:
8mL of glycerol was added to 32mL of H at pH=2.5In Cl solution and stirring was continued for 10min, designated solution A. The solution is then added to ZnCl 2 (0.2726g，2mmol)、InCl 3 ·4H 2 O (1.1727 g,2 mmol), thioacetamide (0.3012 g,4 mmol) and BiVO 4 (0.1 g), sonicated for 15min and stirred for a further 10min, designated solution B. Stirring solution B in water bath at 80deg.C for 120min, centrifuging, washing, and vacuum drying in vacuum oven at 60deg.C overnight to obtain BiVO containing S vacancy 4 /S V -ZnIn 2 S 4 Z-type heterojunction photocatalyst, denoted BiVO 4 /S V -ZnIn 2 S 4 。
XRD characterization
A Shimadzu XRD-6000 type X-ray powder diffractometer was used, wherein the characterization parameters were set as follows: the angle range of the Cu target and K alpha rays is 0.15405nm, the angle range is 5-70 degrees, and the scanning speed is 4 degrees/min.
As can be seen from FIG. 1, the synthesized BiVO 4 Is identical to the monoclinic phase (JCPCDS Card No. 14-0688) and corresponds to the monoclinic phase BiVO at a diffraction angle of about 18.7 DEG 4 The diffraction peak at a diffraction angle of about 30.6 deg. corresponds to the (040) crystal plane.
As can be seen from FIG. 2, the characteristic diffraction peaks at diffraction angles of about 21.2 °, 27.6 °, 29.7 °, 39.4 °, 47.3 °, 51.7 °, and 55.8 ° correspond to the hexagonal phase ZnIn, respectively 2 S 4 (006), (102), (104), (108), (110), (202) and (202) crystal planes (JCPDS No. 72-0773), which illustrate ZnIn 2 S 4 Is a successful preparation of (a).
Furthermore, as is evident from FIG. 3, biVO 4 /S V -ZnIn 2 S 4 ZnIn is simultaneously present in XRD pattern of photocatalyst 2 S 4 Characteristic peaks and BiVO of (C) 4 No impurity peaks were found, indicating that they are two-phase composites.
SEM and mapping characterization
The morphology of the catalyst was characterized using a scanning electron microscope (Gemini 500, zeiss, germany) with an acceleration voltage of 15kV.
FIG. 4 is BiVO 4 From this SEM image, it can be seen that the morphology is a decahedral-like structure.
FIG. 5 is ZnIn 2 S 4 From the SEM image of (c), the structure is clearly seen as a stacked sheet structure.
FIG. 6 is BiVO 4 /S V -ZnIn 2 S 4 SEM images of the composite material, from which ZnIn can be clearly seen 2 S 4 The nano-sheets are uniformly and densely coated on the BiVO 4 And forming a 3D core-shell structure with a layered structure on the surface.
FIG. 7 is BiVO 4 /S V -ZnIn 2 S 4 Mapping characterization of the composite, from which it is known that the composite is composed of Zn, S, V, in, bi and O elements, is identical to the expected result.
Characterization of uv-vis diffuse reflectance
The ultraviolet-visible diffuse reflection spectrum characterization instrument is Shimadzu-2600, the light absorption performance of the material is analyzed, and BaSO is used in the test 4 By way of background, the scanning range is 200-800nm.
FIG. 8 is BiVO 4 、ZnIn 2 S 4 And BiVO 4 /S V -ZnIn 2 S 4 Ultraviolet-visible diffuse reflectance spectrum of (c). As can be seen from the figure, pure ZnIn 2 S 4 And pure BiVO 4 Is about 500nm and 540nm, respectively, which is consistent with the results reported previously. And when the two are combined to form BiVO 4 /S V -ZnIn 2 S 4 When the photocatalyst is compounded, the absorption intensity of the ultraviolet-visible light region is obviously enhanced.
Electron paramagnetic resonance characterization
FIG. 9 is ZnIn 2 S 4 And BiVO 4 /S V -ZnIn 2 S 4 Electron paramagnetic resonance test (EPR) results of (c). In ZnIn 2 S 4 Signal without any gaps, but BiVO 4 /S V -ZnIn 2 S 4 The EPR signal of S vacancy occurs at g=2.003, indicating the presence of S vacancy in the constructed core-shell heterojunction.
Photocurrent characterization
The photocurrent profile of the sample was run using a Zahner PP211 (Germany) electrochemical workstation standard three electrode test system. In a standard three electrode system, a 0.5M sodium sulfate solution is used as an electrolyte, a Saturated Calomel Electrode (SCE) is used as a reference electrode, a platinum wire is used as a counter electrode, and a sample die film coated on Indium Tin Oxide (ITO) glass is used as a working electrode. 5mg of the powder sample was weighed and dispersed in 2mL of ethanol solution, sonicated for 30 minutes to form a uniform suspension, which was then added dropwise to ITO glass (1X 2 cm) 2 ) And (3) upper part. The working electrode was dried in an oven at 80 ℃ for 1 hour and then subjected to photoelectric testing. The light source used for the electrochemical test was a 300W xenon lamp with an illumination time interval of 20 seconds (lamp 20s on, lamp 20s off). The surface photovoltage test equipment consisted of a lock-in amplifier (SR 830) photointerrupter, and monochromatic light was provided by a 500W xenon lamp through a monochromatic rasterizer.
FIG. 10 is BiVO 4 、ZnIn 2 S 4 And BiVO 4 /S V -ZnIn 2 S 4 And (3) a photocurrent characterization result. As can be seen from the figure, the pure phase BiVO 4 And ZnIn 2 S 4 Shows relatively low photocurrent density, and the current density is obviously enhanced after the two are compounded, which indicates that BiVO 4 /S V -ZnIn 2 S 4 The composite material has higher electrons (e - ) And cavity (h) + ) Separation efficiency.
Photocatalytic synthetic ammonia test
At room temperature and N 2 And carrying out a photocatalytic synthesis ammonia experiment in the atmosphere. In the experiment, 50mg of the catalyst was dispersed in 200mL of ultrapure water and sonicated for 15min. The suspension is poured into a quartz reactor (a cover made of quartz material is sealed with the reactor by a sealing ring to prevent air leakage). Introducing N under dark and light-proof condition 2 (99.999%, 200 mL/min) was bubbled for 30min to remove air from the system. Then a 300W Xe lamp (PL-X300D, lambda > 400nm, illumination intensity of 3.82W/cm) was turned on 2 ) Photocatalytic experiments were performed.
Detection of NH in Water Using Naviet reagent 4 + The specific operation is as follows: 10mL of the reaction solution was collected by syringe every 15min and immediately centrifuged (8000rpm,10 min), the centrifuged liquid was filtered through a 0.22 μm filter into a 10mL cuvette. Then, 200. Mu.L of potassium sodium tartrate solution was added to the cuvette, and after thorough mixing, 300. Mu.L of Nessler reagent was added to the above solution. After mixing for 15 minutes, NH in the solution was measured by Shimadzu UV-2600 spectrometer at λ=420 nm 4 + The content is as follows.
FIG. 11 shows the results of a photocatalytic synthetic ammonia test. As can be seen from the figure, with the extension of the illumination time, BVO, ZIS and different ratios of BVO/S V NH of ZIS composite 4 + The amount of production steadily increases. BiVO (BiVO) 4 /S V -ZnIn 2 S 4 The synthetic ammonia rate of the composite photocatalyst is obviously higher than that of pure phase BiVO 4 And ZnIn 2 S 4 NH of it 4 + The production rate reaches 58.5 mu mol g -1 ·h -1 . This suggests that the formation of heterojunction and S vacancies may promote more photogenerated electrons to participate in photocatalytic N 2 Reduction reaction, increase NH 4 + Is a rate of generation of (a).

Claims (3)

1. BiVO containing S vacancy 4 /S V -ZnIn 2 S 4 The preparation method of the Z-type heterojunction photocatalyst is characterized by comprising the following steps of:
(1) Adding glycerol into an HCl aqueous solution with pH value of 2-2.5, and stirring for 10-20 min to obtain a solution A;
in the solution A, the volume fraction of glycerol is 20-25%, and the volume fraction of HCl aqueous solution is 75-80%;
(2) Adding ZnCl into the solution A obtained in the step (1) 2 、InCl 3 ·4H 2 O, thioacetamide and BiVO 4 Ultrasonic treatment is carried out for 15-30 min, and stirring is carried out for 10-20 min to obtain a solution B;
the ZnCl 2 、InCl 3 ·4H 2 The ratio of the amounts of O and thioacetamide is 1:1:2;
(3) Stirring and reacting the solution B obtained in the step (2) at 80-85 ℃ for 120-150 min, centrifuging, washing and drying to obtain the product containingBiVO with S vacancy 4 /S V -ZnIn 2 S 4 Z-type heterojunction photocatalysts.
2. The S vacancy containing BiVO of claim 1 4 /S V -ZnIn 2 S 4 The preparation method of the Z-type heterojunction photocatalyst is characterized in that in the step (2), the ZnCl is prepared by 2 The concentration in the solution B is 0.05-0.075 mmol/mL.
3. The S vacancy containing BiVO of claim 1 4 /S V -ZnIn 2 S 4 The preparation method of the Z-type heterojunction photocatalyst is characterized in that in the step (2), the BiVO 4 The concentration in the solution B is 2.5-5 mg/mL.
CN202110987035.9A 2021-08-26 2021-08-26 Preparation method of Z-type heterojunction photocatalyst containing S vacancy Active CN113856671B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202110987035.9A CN113856671B (en) 2021-08-26 2021-08-26 Preparation method of Z-type heterojunction photocatalyst containing S vacancy

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202110987035.9A CN113856671B (en) 2021-08-26 2021-08-26 Preparation method of Z-type heterojunction photocatalyst containing S vacancy

Publications (2)

Publication Number Publication Date
CN113856671A CN113856671A (en) 2021-12-31
CN113856671B true CN113856671B (en) 2023-07-21

Family

ID=78988526

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202110987035.9A Active CN113856671B (en) 2021-08-26 2021-08-26 Preparation method of Z-type heterojunction photocatalyst containing S vacancy

Country Status (1)

Country Link
CN (1) CN113856671B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114653381A (en) * 2022-02-15 2022-06-24 江苏大学 ZnIn2S4BiVO (BiVO) wrapped by nanosheets4Preparation method and application of micron rod core-shell heterojunction catalyst
CN115385373B (en) * 2022-08-12 2024-01-16 浙江工业大学 Indium zinc sulfide photocatalyst containing sulfur vacancy and zinc vacancy, and preparation method and application thereof
CN116440926A (en) * 2023-04-28 2023-07-18 重庆工商大学 Modified ZnIn 2 S 4 /BiVO 4 Heterojunction between benzyl alcohol and CO 2 Application in photocatalytic carboxylation

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111514892A (en) * 2020-05-20 2020-08-11 蚌埠学院 Bismuth vanadate/silver chromate heterojunction photocatalyst and preparation method and application thereof
CN112756000A (en) * 2019-11-04 2021-05-07 商丘师范学院 Method for preparing sulfide semiconductor/metal nano-particles by using sulfur vacancy defects and application thereof
CN112916035A (en) * 2021-01-21 2021-06-08 湖南大学 Fish scale tubular carbon nitride composite heterojunction photocatalyst and preparation method and application thereof
US11063164B1 (en) * 2020-09-17 2021-07-13 Allen Howard Engel Method and materials to manufacture heterojunctions, diodes, and solar cells

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112756000A (en) * 2019-11-04 2021-05-07 商丘师范学院 Method for preparing sulfide semiconductor/metal nano-particles by using sulfur vacancy defects and application thereof
CN111514892A (en) * 2020-05-20 2020-08-11 蚌埠学院 Bismuth vanadate/silver chromate heterojunction photocatalyst and preparation method and application thereof
US11063164B1 (en) * 2020-09-17 2021-07-13 Allen Howard Engel Method and materials to manufacture heterojunctions, diodes, and solar cells
CN112916035A (en) * 2021-01-21 2021-06-08 湖南大学 Fish scale tubular carbon nitride composite heterojunction photocatalyst and preparation method and application thereof

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
All-solid-state BiVO4/ZnIn2S4 Z-scheme composite with efficient charge separations for improved visible light photocatalytic organics degradation;Deling Yuan 等;《Chinese Chemical Letters》;第第31卷卷;547–550 *
Half-unit-cell ZnIn2S4 monolayer with sulfur vacancies for photocatalytic hydrogen evolution;Chun Du 等;《Applied Catalysis B: Environmental》;第第248卷卷;193–201 *

Also Published As

Publication number Publication date
CN113856671A (en) 2021-12-31

Similar Documents

Publication Publication Date Title
CN113856671B (en) Preparation method of Z-type heterojunction photocatalyst containing S vacancy
Mu et al. Construction of 3D hierarchical microarchitectures of Z-scheme UiO-66-(COOH) 2/ZnIn2S4 hybrid decorated with non-noble MoS2 cocatalyst: A highly efficient photocatalyst for hydrogen evolution and Cr (VI) reduction
Zhu et al. Zn defect-mediated Z-scheme electron-hole separation in AgIn5S8/ZnS heterojunction for enhanced visible-light photocatalytic hydrogen evolution
Zhang et al. Boosted photocatalytic nitrogen fixation by bismuth and oxygen vacancies in Bi 2 MoO 6/BiOBr composite structures
Liu et al. Z-scheme junction Bi2O2 (NO3)(OH)/g-C3N4 for promoting CO2 photoreduction
CN108686665B (en) Preparation method of nanorod zinc ferrite in-situ composite lamellar titanium dioxide photocatalytic material
Xia et al. 3D hollow Bi2O3@ CoAl-LDHs direct Z-scheme heterostructure for visible-light-driven photocatalytic ammonia synthesis
Song et al. Enhanced photocatalytic decomposition of an organic dye under visible light with a stable LaFeO3/AgBr heterostructured photocatalyst
CN113198496B (en) Metallic indium-doped lead cesium bromide perovskite quantum dot photocatalyst, preparation method and application thereof in reduction of carbon dioxide
Yan et al. Synthesis of a nano-sized hybrid C 3 N 4/TiO 2 sample for enhanced and steady solar energy absorption and utilization
An et al. Novel microreactors of polyacrylamide (PAM) CdS microgels for admirable photocatalytic H2 production under visible light
Yang et al. Efficient H 2 evolution on Co 3 S 4/Zn 0.5 Cd 0.5 S nanocomposites by photocatalytic synergistic reaction
Jiang et al. ZIF-9 derived cobalt phosphide and In2O3 as co-catalysts for efficient hydrogen production
CN105664969B (en) A kind of titanium dioxide-platinum-cobaltosic oxide tri compound catalysis material and preparation method thereof
Xu et al. In situ growth of CuS nanoparticles on gC 3 N 4 nanosheets for H 2 production and the degradation of organic pollutant under visible-light irradiation
Chen et al. In situ construction of a direct Z-scheme CdIn 2 S 4/TiO 2 heterojunction for improving photocatalytic properties
CN110026207B (en) CaTiO3@ZnIn2S4Nano composite material and preparation method and application thereof
Wang et al. Dual-metal sites CuInS2/g-C3N4 Z-scheme heterojunction with efficient photocatalytic CO2 reduction selectivity
Wang et al. Z-scheme heterojunctions with double vacancies semiconductors MoO3− x and Fe-doped W18O49 for photocatalytic nitrogen fixation
Dou et al. Carbon dots modified dendritic TiO2-CdS heterojunction for enhanced photodegradation of rhodamine and hydrogen evolution
Guan et al. Engineering tandem double pn heterostructured CeO2@ CdS-Cu8S5 hollow spheres for remarkable photocatalytic CO2 reduction
Sun et al. Modulating charge transport behavior across the interface via g-C3N4 surface discrete modified BiOI and Bi2MoO6 for efficient photodegradation of glyphosate
Wang et al. Construction of CdSe/ZnIn2S4 Z-Scheme heterojunction for enhanced photocatalytic degradation of tetracycline
Guo et al. Controllable synthesis of a 3D ZnS@ MoO 3 heterojunction via a hydrothermal method towards efficient NO purification under visible light
Shen et al. Interesting molecular adsorption strategy induced surface charge redistribution of commercial TiO2: Boosting 9 times photocatalytic hydrogen production performance

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant