CN113846294A - Manufacturing device of display device - Google Patents

Manufacturing device of display device Download PDF

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Publication number
CN113846294A
CN113846294A CN202011386009.2A CN202011386009A CN113846294A CN 113846294 A CN113846294 A CN 113846294A CN 202011386009 A CN202011386009 A CN 202011386009A CN 113846294 A CN113846294 A CN 113846294A
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CN
China
Prior art keywords
crucible
display device
manufacturing apparatus
deposition substance
deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202011386009.2A
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Chinese (zh)
Inventor
郑真洙
车敏彻
金智慧
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Display Co Ltd
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Samsung Display Co Ltd
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Filing date
Publication date
Application filed by Samsung Display Co Ltd filed Critical Samsung Display Co Ltd
Publication of CN113846294A publication Critical patent/CN113846294A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • C23C14/042Coating on selected surface areas, e.g. using masks using masks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • C23C14/042Coating on selected surface areas, e.g. using masks using masks
    • C23C14/044Coating on selected surface areas, e.g. using masks using masks using masks to redistribute rather than totally prevent coating, e.g. producing thickness gradient
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12Organic material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/243Crucibles for source material
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

The present invention provides a manufacturing apparatus of a display device, including: a crucible containing a deposition substance; a nozzle disposed at one side of the crucible to guide a path along which the deposition substance is ejected toward a substrate; and a cover disposed on a surface of the deposition substance contained in the crucible.

Description

Manufacturing device of display device
Technical Field
The present invention relates to a manufacturing apparatus, and more particularly, to a manufacturing apparatus of a display device with improved deposition uniformity.
Background
For example, in a thin film manufacturing process for forming a thin film in an organic light emitting display device, a deposition process for evaporating a deposition substance and attaching the deposition substance to a surface of a substrate is often used. Namely, the following deposition steps are utilized: a mask is placed on the substrate and vapor of the deposition substance is passed through openings of the mask, thereby forming a thin film of a desired pattern on the substrate.
Disclosure of Invention
Embodiments of the present invention provide a manufacturing apparatus of a display device with improved deposition uniformity.
According to an aspect of the present invention, there is provided an apparatus for manufacturing a display device, comprising: a crucible containing a deposition substance; a nozzle disposed at one side of the crucible to guide a path along which the deposition substance is ejected toward a substrate; and a cover disposed on a surface of the deposition substance contained in the crucible.
In this embodiment, the cover may be directly disposed on the surface of the deposition substance contained in the crucible.
In this embodiment, the surface of the deposition substance contained in the crucible may have a first area, and the cover may have a second area smaller than the first area.
In this embodiment, the cover may expose at least a portion of a surface of the deposition substance contained in the crucible.
In this embodiment, the surface of the deposition substance to which the at least one portion is exposed may be 10% to 50% of the total area of the surface of the deposition substance.
In this embodiment, the deposition substance contained in the crucible may have a first specific gravity, and the cap may have a second specific gravity smaller than the first specific gravity.
In this embodiment, the deposition substance contained in the crucible may include silver (Ag).
In this embodiment, the cap may include at least one of carbon, graphite, pyrolytic boron nitride, pyrolytic graphite, and mullite.
In this embodiment, the cover may be provided in a circular shape.
In this embodiment, the cover may be provided in a polygonal shape.
In this embodiment, the cap may be formed with projections and recesses on a surface facing the nozzle.
In this embodiment, the crucible may be provided in a cylindrical shape.
In this embodiment, the manufacturing apparatus of the display device may further include: a heater heating the deposition material contained in the crucible.
In this embodiment, the deposition substance contained in the crucible may be heated by the heater to be ejected toward the substrate.
According to another aspect of the present invention, there is provided a manufacturing apparatus of a display device, comprising: a mask including an opening; a crucible containing a deposition substance; a nozzle disposed at one side of the crucible to guide a path along which the deposition substance is ejected toward a substrate; and a cover disposed on a surface of the deposition substance received in the crucible, wherein the deposition substance received in the crucible is ejected through the nozzle, passes through the opening, and is deposited on the substrate.
In this embodiment, the cover may be directly disposed on the surface of the deposition substance contained in the crucible.
In this embodiment, the surface of the deposition substance contained in the crucible may have a first area, and the cover may have a second area smaller than the first area.
In this embodiment, the deposition substance contained in the crucible may have a first specific gravity, and the cap may have a second specific gravity smaller than the first specific gravity.
In this embodiment, the deposition substance contained in the crucible may include silver (Ag).
In this embodiment, the cap may include at least one of carbon, graphite, pyrolytic boron nitride, pyrolytic graphite, and mullite.
Other aspects, features, and advantages besides those described above will become apparent from the following detailed description, claims, and drawings for practicing the invention.
According to an embodiment of the present invention configured as described above, a cover is disposed on the surface of the deposition substance contained in the crucible, thereby preventing the occurrence of a Splash (Splash) failure, and thus, a manufacturing apparatus of a display device with improved deposition uniformity can be realized. Of course, the scope of the present invention is not limited by such effects.
Drawings
Fig. 1 is a sectional view schematically illustrating a manufacturing apparatus of a display device according to an embodiment.
Fig. 2 is a perspective view schematically illustrating a partial configuration of a manufacturing apparatus of a display device according to an embodiment.
Fig. 3 is a perspective view schematically illustrating a partial configuration of a manufacturing apparatus of a display device according to an embodiment.
Fig. 4 is a sectional view schematically illustrating a partial configuration of a manufacturing apparatus of a display device according to an embodiment.
Fig. 5 is a plan view schematically illustrating a partial configuration of a manufacturing apparatus of a display device according to an embodiment.
Fig. 6 is a plan view schematically illustrating a partial configuration of a manufacturing apparatus of a display device according to an embodiment.
Fig. 7 is a plan view schematically illustrating a partial configuration of a manufacturing apparatus of a display device according to an embodiment.
Fig. 8 is a sectional view schematically illustrating a partial configuration of a manufacturing apparatus of a display device according to an embodiment.
Fig. 9 is a perspective view schematically illustrating a display device manufactured using a manufacturing apparatus of a display device according to an embodiment.
Fig. 10 is a sectional view schematically illustrating a display device manufactured using a manufacturing apparatus of a display device according to an embodiment.
Description of reference numerals:
1: display device
100: substrate
300: manufacturing apparatus
400: deposition source
410: crucible pot
430: nozzle with a nozzle body
450: deposition material
460: cover
Detailed Description
While the invention is amenable to various modifications and alternative forms, specifics thereof have been shown by way of example in the drawings and will be described in detail. The effects and features of the present invention and a method for achieving the same will be apparent with reference to embodiments described in detail later together with the accompanying drawings. However, the present invention may be implemented in various forms and is not limited to the embodiments disclosed below.
In the following embodiments, the terms first, second, etc. are not used in a limiting sense, but are used for the purpose of distinguishing one constituent element from other constituent elements.
In the following embodiments, expressions in the singular number include expressions in the plural number as long as other meanings are not explicitly indicated in the context.
In the following embodiments, terms such as "including" or "having" indicate the presence of a feature or a component described in the specification, and do not exclude the possibility of addition of one or more other features or components.
In the following embodiments, when a portion of a film, a region, a component, or the like is located on or above another portion, the portion includes not only a portion located immediately above the other portion but also a portion in which another film, a region, a component, or the like is interposed therebetween.
In the drawings, the sizes of the constituent elements may be exaggerated or reduced for convenience of explanation. For example, the size and thickness of each component shown in the drawings are arbitrarily shown for convenience of explanation, and thus the present invention is not necessarily limited to the illustrated contents.
In the present specification, "a and/or B" indicates the case of a or B or a and B. In the present specification, "at least one of a and B" means a or B or a and B.
In the following embodiments, the meaning of "the wiring extends in the first direction or the second direction" includes not only the case of extending in a straight line shape but also the case of extending in a zigzag or curved line in the first direction or the second direction.
In the following embodiments, when "on the plane" is referred to, this indicates a case where the target portion is viewed from above, and when "on the cross section" is referred to, this indicates a case where a cross section obtained by vertically cutting the target portion is viewed from the side. In the following embodiments, when referring to "overlap", this includes "on-plane" as well as "on-section" overlaps.
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings, in which the same or corresponding constituent elements are given the same reference numerals.
Fig. 1 is a sectional view schematically illustrating a manufacturing apparatus of a display device according to an embodiment.
Referring to fig. 1, a manufacturing apparatus 300 of a display device according to an embodiment may include a chamber 301, a mask 310, a magnetic force generating part 320, a photographing part 330, a pressure adjusting part 390, and a deposition source 400.
The cavity 301 may be internally formed with a space. Although not shown, the cavity 301 may be formed to be partially opened, and a gate valve or the like may be disposed at the opened portion of the cavity 301 to open or shield the opened portion of the cavity 301.
The mask 310 may include an opening capable of passing a deposition substance therethrough. For one embodiment, the mask 310 may include a mask sheet and a mask frame fixed to the mask sheet. A mask sheet or a plurality of mask sheets may be fixed to the mask frame.
The mask 310 may have disposed thereon the substrate 100 on which the deposition substance is deposited, and although not shown, an electrostatic chuck may be disposed on the substrate 100. The electrostatic chuck may fix the substrate 100 using an electrostatic force and may function to closely adhere the substrate 100 to the mask 310. The electrostatic chuck may be combined with the substrate 100 so that the substrate 100 may be prevented from moving when alignment (Align) and deposition of a deposition substance are performed. Further, the substrate 100 can be prevented from being lifted by the gas filled between the electrostatic chuck and the substrate 100 due to the gas leaking to the outside.
The magnetic force generating part 320 may be disposed in the cavity 301 to closely adhere the mask 310 to the substrate 100. The magnetic force generating part 320 may be disposed to overlap the electrostatic chuck. The magnetic force generating part 320 is disposed to overlap the electrostatic chuck, so that the substrate 100 can be brought into close contact with the mask 310 not only by an electrostatic force but also by a magnetic force. The mask 310 is pulled by the magnetic force generated by the magnetic force generating unit 320, so that the substrate 100 and the mask 310 can be prevented from sagging.
The photographing part 330 may be disposed at the chamber 301 to photograph the positions of the substrate 100, the mask 310, and the deposition source 400. The substrate 100, the mask 310, and the deposition source 400 may be aligned according to the positions of the substrate 100, the mask 310, and the deposition source 400 photographed by the photographing part 330.
The pressure adjusting part 390 may be connected to the chamber 301 to adjust the pressure inside the chamber 301. At this time, the pressure regulator 390 may include a connection pipe 391 connected to the chamber 301 and a pump 393 disposed at the connection pipe 391. In this case, the connection pipe 391 may be connected to an external separate device capable of performing pollutant removal.
The manufacturing apparatus 300 of a display device according to an embodiment may further include a deposition source 400. The deposition source 400 may be disposed inside the chamber 301. The deposition source 400 may contain a deposition substance therein.
Fig. 2 is a perspective view schematically illustrating a partial configuration of a manufacturing apparatus of a display device according to an embodiment, fig. 3 is a perspective view schematically illustrating a partial configuration of a manufacturing apparatus of a display device according to an embodiment, and fig. 4 is a cross-sectional view schematically illustrating a partial configuration of a manufacturing apparatus of a display device according to an embodiment.
More specifically, fig. 2 and 3 are perspective views schematically illustrating a deposition source 400 included in a manufacturing apparatus 300 of a display device according to an embodiment, and fig. 4 is a sectional view schematically illustrating the deposition source 400 included in the manufacturing apparatus 300 of the display device according to an embodiment.
Referring to fig. 2, 3, and 4, a deposition source 400 according to an embodiment may include: a crucible 410 containing a deposition substance 450; a nozzle 430 disposed at an upper portion of the crucible 410 to guide a path along which the deposition substance 450 is ejected toward the substrate 100; and a heater 480 located at a side and/or a lower side of the crucible 410 and heating the deposition substance 450 contained in the crucible 410.
As an example, the deposition source 400 may include a housing 490 for receiving the crucible 410, the nozzle 430, and the heater 480. A plurality of crucibles 410 may be received in the housing 490.
Here, the manufacturing apparatus 300 according to an embodiment is explained in a case where the upper portion of the crucible 410 is opened according to the deposition source 400 located at the lower portion of the chamber 301, however, the opened portion of the crucible 410 may be a side portion or a lower portion according to the location of the deposition source 400.
The crucible 410 may be formed with a space therein to contain the deposition substance 450, and may be formed with one side opened. At this time, the deposition substance 450 may include an organic substance or a metal. For example, the deposition substance 450 may include silver (Ag).
As an example, as shown in fig. 3, the crucible 410 may be provided in a cylindrical shape. However, the crucible 410 may be provided in various shapes other than the cylindrical shape.
The heater 480 may be disposed at least one of a side and/or a lower surface of the crucible 410. The heater 480 heats the crucible 410, so that the deposition substance 450 contained in the crucible 410 can be heated. The deposition substance 450 contained in the crucible 410 may be melted, vaporized, or sublimated by heating the heater 480. When the deposition substance 450 contained in the crucible 410 is heated by the heater 480, the pressure in the crucible 410 is increased, so that the melted, vaporized, or sublimated deposition substance 450 may be ejected toward the substrate 100 (fig. 1).
A nozzle 430 may be disposed at the opened side of the crucible 410. The nozzle 430 may be disposed at an upper portion of the crucible 410 to guide a path of the deposition substance 450 sprayed toward the substrate 100 (fig. 1). Illustrated in fig. 4 is a case of being provided with one nozzle 430 corresponding to one crucible 410, however, a plurality of nozzles 430 may be provided in a manner corresponding to one crucible 410. The nozzle 430 may be connected to the crucible 410 by a connection member.
As an example, as shown in FIG. 4, at least a portion of the nozzle 430 may be inserted inside the crucible 410. As another embodiment, the nozzle 430 may also be disposed at an upper portion of the crucible 410.
In fig. 4, a case where the middle portion of the nozzle 430 is provided in a concave shape is illustrated, but is not limited thereto. The shape of the nozzle 430 may be provided in various shapes such as a cylindrical shape.
Generally, the crucible is heated by a heater to vaporize the deposition substance contained in the crucible, whereby the deposition substance can be deposited on the substrate. However, in the case where the deposition substance contained in the crucible is heated to deposit the deposition substance on the substrate, there is a problem in that a sputtering (Splash) defect occurs. More specifically, there are cases where the following disadvantages occur: when the deposition material contained in the crucible is heated, bubbles are generated in the deposition material, and the bubbles generated in the deposition material are broken on the surface of the deposition material, thereby depositing the deposition material in a liquid state on the substrate. Further, the following disadvantages may occur: the deposition substance condensed in the nozzle without being jetted toward the substrate drops, so that the deposition substance in a liquid state is deposited on the substrate.
As an example, a cover 460 may be disposed on the deposition substance 450 contained in the crucible 410. The lid 460 may be disposed directly on the surface 451 of the deposition substance 450 contained within the crucible 410. Since the cover 460 is disposed on the surface 451 of the deposition substance 450 contained in the crucible 410, it is possible to prevent a spatter (Splash) failure from occurring and to improve the deposition uniformity of the manufacturing apparatus 300 for a display device.
In more detail, since the cover 460 is disposed on the surface 451 of the deposition substance 450 received in the crucible 410, it is possible to prevent bubbles generated inside the deposition substance 450 from being broken on the surface 451 of the deposition substance 450 to deposit the deposition substance 450 in a liquid state on the substrate 100 (fig. 1), and it is possible to prevent the deposition substance 450 condensed on the nozzle 430 without being sprayed toward the substrate 100 (fig. 1) from falling down to cause a defect in that the deposition substance 450 in a liquid state is deposited on the substrate 100 (fig. 1), thereby making it possible to improve the deposition uniformity of the manufacturing apparatus 300 for a display device.
As an example, the cover 460 may have a lower thermal conductivity than the deposition substance 450 contained in the crucible 410. Also, the cover 460 may have a specific gravity smaller than that of the deposition substance 450 contained in the crucible 410. For example, the deposition substance 450 contained in the crucible 410 has a first specific gravity, and the cover 460 disposed on the deposition substance 450 may have a second specific gravity lower than the first specific gravity. The cover 460 may be manufactured using a substance that is easily separated from the deposition substance 450 in a solid state after the deposition substance 450 contained in the crucible 410 is solidified. For example, the cap 460 may include at least one of carbon, Graphite, Pyrolytic Boron Nitride (PBN), Pyrolytic Graphite (PG), and Mullite (Mullite).
As an example, the cover 460 may include at least one of Graphite, Pyrolytic Boron Nitride (PBN), and Mullite (Mullite), and the surface of the cover 460 may be coated with Pyrolytic Graphite (PG).
Fig. 5 is a plan view schematically illustrating a partial configuration of a manufacturing apparatus of a display device according to an embodiment, fig. 6 is a plan view schematically illustrating a partial configuration of a manufacturing apparatus of a display device according to an embodiment, and fig. 7 is a plan view schematically illustrating a partial configuration of a manufacturing apparatus of a display device according to an embodiment.
More specifically, fig. 5, 6, and 7 are diagrams illustrating to compare the area of the deposition substance contained in the crucible with the area of the cover and to explain the shape of the cover.
Referring to fig. 5, as an embodiment, the area of the cover 460 may be provided to be small compared to the area of the deposition substance 450 contained in the crucible 410. More specifically, the surface of the deposition substance 450 contained in the crucible 410 may have a first area a1, and the cover 460 may have a second area a2 smaller than the first area a 1.
The cover 460 has a small area compared to the area of the deposition substance 450 contained in the crucible 410, so that the cover 460 may expose at least a portion of the surface of the deposition substance 450 contained in the crucible 410. At this time, the surface of the deposition substance 450, at least a portion of which is exposed by the cover 460, may be 5% to 60%, 5% to 50%, 10% to 60%, etc. of the total area of the surface of the deposition substance 450, and various modifications may be made. For example, the surface of the deposition substance 450 at least a portion of which is exposed by the cover 460 may be 10% to 50% of the total area of the surface of the deposition substance 450.
The deposition substance 450 may be sprayed toward the substrate by vaporizing at least a portion of the exposed surface of the deposition substance 450 through the cover 460.
As an example, the cover 460 disposed on the deposition substance 450 contained in the crucible 410 may be provided in a circular shape as shown in fig. 5, may be configured in a quadrangular shape as shown in fig. 6, may be configured in a cross shape as shown in fig. 7, and the like, and may be variously modified. For example, the cover 460 disposed on the deposition substance 450 contained in the crucible 410 may also be provided in an elliptical or polygonal shape.
Fig. 8 is a sectional view schematically illustrating a partial configuration of a manufacturing apparatus of a display device according to an embodiment.
The embodiment of fig. 8 differs from the embodiment of fig. 4 in that irregularities are formed on a surface 461 of the cover 460. Hereinafter, the description will be made centering on differences. The rest of the constitution is the same as or similar to the above-described embodiment.
Referring to fig. 8, the surface 461 of the cover 460 disposed on the deposition substance 450 contained in the crucible 410 may be formed with protrusions and depressions 463. More specifically, the cover 460 disposed on the deposition substance 450 contained in the crucible 410 may include a plurality of protrusions and depressions 463 formed on a surface 461 facing the nozzle 430.
As the unevenness 463 is formed on the surface 461 of the cover 460 disposed on the deposition substance 450 accommodated in the crucible 410, it is possible to prevent the generation of the spattering defect due to the deposition substance 450 dropping by condensing on the nozzle 430.
Fig. 9 is a perspective view schematically illustrating a display device manufactured using a manufacturing apparatus of a display device according to an embodiment, and fig. 10 is a cross-sectional view schematically illustrating a display device manufactured using a manufacturing apparatus of a display device according to an embodiment. Fig. 10 corresponds to a sectional view taken along the line I-I' of fig. 9.
Referring to fig. 9, the display device 1 may include a display area DA and a non-display area NDA disposed at a periphery of the display area DA. The non-display area NDA may surround the display area DA. The display device 1 may provide an image using light emitted from a plurality of pixels P arranged in the display area DA, and the non-display area NDA may be an area where no image is displayed.
Hereinafter, the display device 1 according to an embodiment of the present invention will be described by taking an organic light emitting display device as an example, but the display device of the present invention is not limited thereto. As an embodiment, the Display device 1 of the present invention may be a Display device such as an inorganic Light Emitting Display device (inorganic Light Emitting Display or inorganic electroluminescence Display) or a Quantum dot Light Emitting Display device (Quantum dot Light Emitting Display). For example, the light-emitting layer of the display element provided in the display device 1 may include an organic substance, or may include an inorganic substance, or may include quantum dots, or may include an organic substance and quantum dots, or may include an inorganic substance and quantum dots.
Although the display device 1 provided with a flat display surface is illustrated in fig. 9, the present invention is not limited thereto. As an example, the display device 1 may include a stereoscopic display surface or a curved display surface.
In the case where the display device 1 includes a stereoscopic type display surface, the display device 1 may include a plurality of display regions that point in different directions from each other, for example, a polygonal columnar display surface may also be included. In the case where the display device 1 includes a curved display surface as an example, the display device 1 can be implemented in various forms such as a flexible, foldable, rollable display device, and the like.
Fig. 9 illustrates a display device 1 that can be applied to a mobile phone terminal. Although not shown, an electronic module, a camera module, a power module, and the like attached to a main board are disposed together with the display device 1 on a stand, a housing, and the like, so that a mobile phone terminal can be configured. In particular, the display device 1 according to the present invention can be applied to small and medium-sized electronic devices such as a flat computer, a car navigation, a game machine, a smart watch, and the like including large-sized electronic devices such as a television, a monitor, and the like.
In fig. 9, a case where the display area DA of the display device 1 is a quadrangle is illustrated, however, the shape of the display area DA may be a polygon such as a circle, an ellipse, or a triangle or a pentagon.
The display device 1 may include a plurality of pixels P arranged in the display area DA. Each of the plurality of pixels P may include an Organic Light-Emitting Diode (OLED). Each of the plurality of pixels P may emit light of, for example, red, green, blue, or white by an Organic Light Emitting Diode (OLED). As described above, the pixel P in this specification can be understood as a pixel that emits light of any one of red, green, blue, and white.
Referring to fig. 10, the pixels P may be disposed on a substrate 100. The pixel P may include a thin film transistor TFT and an organic light emitting diode OLED.
The substrate 100 may include glass or polymer resin. The polymer resin may include polyethersulfone (polyethersulfone), polyacrylate (polyacrylate), polyetherimide (polyetherimide), polyethylene naphthalate (polyethylene naphthalate), polyethylene terephthalate (polyethylene terephthalate), polyphenylene sulfide (polyphenylene sulfide), polyarylate (polyarylate), polyimide (polyimide), polycarbonate (polycarbonate), cellulose acetate propionate (cellulose acetate propionate), and the like. The substrate 100 including the polymer resin may have flexibility, rollability, or bendable characteristics. The substrate 100 may have a multilayer structure including a layer containing the polymer resin and an inorganic layer (not shown).
A buffer layer 101 may be disposed on the substrate 100. The buffer layer 101 may be on the substrate 100 to reduce or block penetration of foreign substances, moisture, or external air from a lower portion of the substrate 100, and may provide a flat surface on the substrate 100. The buffer layer 101 may include an inorganic substance such as an oxide or a nitride, or may include an organic substance, or may include an organic/inorganic composite, and may be configured as a single layer or a multi-layer structure of the inorganic substance and the organic substance.
A thin film transistor TFT may be disposed on the buffer layer 101. The thin film transistor TFT may include a semiconductor layer 134, a gate electrode 136 overlapping the semiconductor layer 134, and a connection electrode electrically connected to the semiconductor layer 134. The thin film transistor TFT may be connected to the organic light emitting diode OLED to drive the organic light emitting diode OLED.
The semiconductor layer 134 may be disposed on the buffer layer 101, and may include: a channel region 131 overlapping the gate electrode 136; the source region 132 and the drain region 133 are disposed on both sides of the channel region 131, and include high-concentration impurities having a higher impurity concentration than the channel region 131. Wherein the impurity may include an N-type impurity or a P-type impurity. The source region 132 and the drain region 133 may be electrically connected to the connection electrode.
The semiconductor layer 134 may include an oxide semiconductor and/or a silicon semiconductor. In the case where the semiconductor layer 134 is formed of an oxide semiconductor, an oxide of one or more substances selected from a group including indium (In), gallium (Ga), tin (Sn), zirconium (Zr), vanadium (V), hafnium (Hf), cadmium (Cd), germanium (Ge), chromium (Cr), titanium (Ti), and zinc (Zn) may be included. For example, the semiconductor layer 134 may be itzo (insnzno), igzo (ingazno), or the like. In the case where the semiconductor layer 134 is formed of a Silicon semiconductor, it may include, for example, amorphous Silicon (a-Si) or Low Temperature Polysilicon (LTPS) that crystallizes amorphous Silicon (a-Si).
A first insulating layer 103 may be disposed on the semiconductor layer 134. The first insulating layer 103 may include a material selected from the group consisting of silicon oxide (SiO)2) Silicon nitride (SiN)X) Silicon oxynitride (SiO)XNY) Aluminum oxide (Al)2O3) Titanium oxide (TiO)2) Tantalum oxide (Ta)2O5) Hafnium oxide (HfO)2) And zinc oxide (ZnO)2) At least one inorganic insulator of the group (1). The first insulating layer 103 may be a single layer or a plurality of layers including the above-described inorganic insulator.
A gate electrode 136 may be disposed on the first insulating layer 103. The gate electrode 136 may be formed in a single layer or a plurality of layers using one or more metals selected from aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), and copper (Cu). The gate electrode 136 may be connected with a gate line that applies an electrical signal to the gate electrode 136.
A second insulating layer 105 may be disposed on the gate electrode 136. The second insulating layer 105 may include a material selected from the group consisting of silicon oxide (SiO)2) Silicon nitride (SiN)X) Silicon oxynitride (SiO)XNY) Aluminum oxide (Al)2O3) Titanium oxide (TiO)2) Tantalum oxide (Ta)2O5) Hafnium oxide (HfO)2) And zinc oxide (ZnO)2) At least one inorganic insulator of the group (1). The second insulating layer 105 may be a single layer or a plurality of layers including the above-described inorganic insulator.
A storage capacitor Cst may be disposed on the first insulating layer 103. The storage capacitor Cst may include: a lower electrode 144; and an upper electrode 146 overlapping the lower electrode 144. The lower electrode 144 and the upper electrode 146 of the storage capacitor Cst may overlap with the second insulating layer 105 interposed therebetween.
The lower electrode 144 of the storage capacitor Cst overlaps the gate electrode 136 of the thin film transistor TFT, and the lower electrode 144 of the storage capacitor Cst may be integrally arranged with the gate electrode 136 of the thin film transistor TFT. As an embodiment, the storage capacitor Cst may not overlap with the thin film transistor TFT, and the lower electrode 144 of the storage capacitor Cst may be an independent constituent element independent of the gate electrode 136 of the thin film transistor TFT.
The upper electrode 146 of the storage capacitor Cst may include aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), and/or copper (Cu), which may be a single layer or a multi-layer thereof.
A third insulating layer 107 may be disposed on the upper electrode 146 of the storage capacitor Cst. The third insulating layer 107 may include a material selected from the group consisting of silicon oxide (SiO)2) Silicon nitride (SiN)X) Silicon oxynitride (SiO)XNY) Aluminum oxide (Al)2O3) Titanium oxide (TiO)2) Tantalum oxide (Ta)2O5) Hafnium oxide (HfO)2) And zinc oxide (ZnO)2) At least one inorganic insulator of the group (1). The third insulating layer 107 may be a single layer or a plurality of layers including the above-described inorganic insulator.
A source electrode 137 and a drain electrode 138 as connection electrodes may be disposed on the third insulating layer 107. The source electrode 137 and the drain electrode 138 may include a conductive substance including molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), or the like, and may be formed as a multilayer or a single layer including the above materials. The source electrode 137 and the drain electrode 138 may have a multilayer structure of Ti/Al/Ti.
A first planarization layer 111 may be disposed on the source electrode 137 and the drain electrode 138. The first planarizing layer 111 may be formed of a film formed using an organic substance or an inorganic substance as a single layer or a plurality of layers. As an embodiment, the first planarization layer 111 may include: general-purpose polymers such as Benzocyclobutene (BCB: Benzocyclobutene), polyimide (PI: polyimide), Hexamethyldisiloxane (HMDSO: Hexamethyldisiloxane), polymethyl methacrylate (PMMA: polymethyl methacrylate), or Polystyrene (PS: Polystyrene); a polymer derivative having a phenol-based pattern; an acrylic polymer; an imide-based polymer; an aromatic ether polymer; an amide polymer; a fluorine-based polymer; a polymer of the p-xylene series; a vinyl alcohol polymer; and mixtures of the foregoing, and the like. In addition, the first planarization layer 111 may include silicon oxide (SiO)2) Silicon nitride (SiN)X) Silicon oxynitride (SiO)XNY) Aluminum oxide (Al)2O3) Titanium oxide (TiO)2) Tantalum oxide (Ta)2O5) Hafnium oxide (HfO)2) Or zinc oxide (ZnO)2) And the like. After the first planarization layer 111 is formed, chemical polishing or mechanical polishing may be performed in order to provide a flat upper surface.
A contact metal layer CM may be disposed on the first planarization layer 111. The contact metal layer CM may include aluminum (Al), copper (Cu), titanium (Ti), etc., and may be formed in a multi-layer or a single layer. The contact metal layer CM may be formed as a multilayer structure of Ti/Al/Ti.
A second planarization layer 113 may be disposed on the contact metal layer CM. The second planarizing layer 113 may be formed of a film made of an organic substance or an inorganic substance as a single layer or a plurality of layers. As an embodiment, the second planarization layer 113 may include: general-purpose polymers such as Benzocyclobutene (BCB: Benzocyclobutene), polyimide (PI: polyimide), Hexamethyldisiloxane (HMDSO: Hexamethyldisiloxane), polymethyl methacrylate (PMMA: polymethyl methacrylate), or Polystyrene (PS: Polystyrene); a polymer derivative having a phenol group; an acrylic polymer; an imide-based polymer; an aromatic ether polymer; an amide polymer; a fluorine-based polymer; a polymer of the p-xylene series; a vinyl alcohol polymer; and mixtures of the foregoing, and the like. In addition, the second planarization layer 113 may include silicon oxide (SiO)2) Silicon nitride (SiN)X) Silicon oxynitride (SiO)XNY) Aluminum oxide (Al)2O3) Titanium oxide (TiO)2) Tantalum oxide (Ta)2O5) Hafnium oxide (HfO)2) Or zinc oxide (ZnO)2) And the like. After the second planarization layer 113 is formed, chemical polishing or mechanical polishing may be performed in order to provide a flat upper surface. As an embodiment, the second planarization layer 113 may be omitted.
An organic light emitting diode OLED including a pixel electrode 210, an intermediate layer 220, and a counter electrode 230 may be disposed on the second planarization layer 113. The pixel electrode 210 may be electrically connected to the contact metal layer CM by penetrating the contact hole of the second planarization layer 113, the contact metal layer CM may be electrically connected to the source electrode 137 and the drain electrode 138, which are connection electrodes of the thin film transistor TFT, by penetrating the contact hole of the first planarization layer 111, and the organic light emitting diode OLED may be electrically connected to the thin film transistor TFT.
The pixel electrode 210 may be disposed on the second planarization layer 113. The pixel electrode 210 may be a (semi-) transmissive electrode or a reflective electrode. The pixel electrode 210 may have: a reflective film formed of aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), (Cu), and compounds thereof; and a transparent or semitransparent electrode layer formed on the reflective film. The transparent or semitransparent electrode layer may have a material selected from the group consisting of Indium Tin Oxide (ITO), Indium Zinc Oxide (IZO), zinc oxide (ZnO), and indium oxide (In)2O3: indium oxide), indium gallium oxide (IGO: indium gallium oxide) and aluminum zinc oxide (AZO: aluminum zinc oxide). The pixel electrode 210 may be provided in a structure of ITO/Ag/ITO lamination.
A pixel defining film 180 may be disposed on the second planarization layer 113, and the pixel defining film 180 may have an opening exposing at least a portion of the pixel electrode 210. A region exposed by the opening of the pixel defining film 180 may be defined as a light emitting region EA. The periphery of the light emitting area EA is a non-light emitting area NEA, which may surround the light emitting area EA. That is, the display area DA may include a plurality of light emitting areas EA and non-light emitting areas NEA surrounding the light emitting areas EA. The pixel defining film 180 may increase a distance between the pixel electrode 210 and the opposite electrode 230, so that an arc or the like may be prevented from occurring at an edge of the pixel electrode 210. For example, the pixel defining film 180 may be formed by a method of spin coating or the like using an organic insulating substance such as polyimide, polyamide, acrylic resin, benzocyclobutene, Hexamethyldisiloxane (HMDSO), and phenol resin.
An intermediate layer 220 may be disposed on the pixel electrode 210 at least a portion of which is exposed by the pixel defining film 180. The intermediate layer 220 may include a light emitting layer 220b, and a first functional layer 220a and/or a second functional layer 220c may be selectively disposed under and over the light emitting layer 220 b.
As an example, the intermediate layer 220 may be formed on the pixel electrode 210 at least a portion of which is exposed by the pixel defining film 180. More specifically, the light emitting layer 220b of the intermediate layer 220 may be formed on the pixel electrode 210 at least a portion of which is exposed by the pixel defining film 180.
The first functional layer 220a may include a Hole Injection Layer (HIL) and/or a Hole Transport Layer (HTL), and the second functional layer 220c may include an Electron Transport Layer (ETL) and/or an Electron Injection Layer (EIL).
The light emitting layer 220b may include an organic substance containing a fluorescent or phosphorescent substance emitting red, green, blue, or white light. The light emitting layer 220b may be a low molecular organic substance or a high molecular organic substance.
In the case where the light emitting layer 220b includes a low molecular organic substance, the intermediate layer 220 may have a structure in which a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer, and the like are laminated in a single or composite structure, and as the low molecular organic substance, there may be included, for example, copper phthalocyanine (CuPc: copper phthalocyanine), N '-Di (naphthalene-1-yl) -N, N' -diphenyl-benzidine (NPB: N, N '-Di (naphthalene-1-yl) -N, N' -phenyl-benzidine), tris-8-hydroxyquinoline aluminum (Alq)3) And the like. Such a layer may be formed by a vacuum deposition method.
When the light-emitting layer 220b includes a high-molecular organic material, the intermediate layer 220 may have a structure including substantially a hole transport layer and the light-emitting layer 220 b. At this time, the hole transport layer may include Poly (3,4-ethylenedioxythiophene) (PEDOT: Poly (3,4-ethylenedioxythiophene)), and the light emitting layer may include high molecular substances such as polyphenylacetylene (PPV: Poly-Phenylene vinylene) system and Polyfluorene (Polyfluorene) system, such a light emitting layer 220b may be formed by a screen printing method, an ink jet printing method, a Laser induced thermal imaging method (LITI), and the like.
A counter electrode 230 may be disposed on the intermediate layer 220. As an example, the counter electrode 230 of the display device 1 may be formed on the intermediate layer 220 by using the manufacturing apparatus 300 (fig. 1) described above. The opposite electrode 230 may be disposed on the intermediate layer 220, and may be disposed in a form covering the entirety of the intermediate layer 220. The counter electrode 230 may be disposed on the display area DA, and may be disposed in a form covering the entire display area DA. That is, the counter electrode 230 may be integrally formed on the entire display panel by opening a mask so as to cover the plurality of pixels P arranged in the display area DA.
The opposite electrode 230 may include a conductive substance having a low work function. For example, the counter electrode 230 may include a (semi-) transparent layer including silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), or an alloy of these, or the like. Alternatively, the opposite electrode 230 may further include, for example, ITO, IZO, ZnO, or In on the (semi-) transparent layer including the above-described substance2O3And the like.
According to an embodiment, in the display device, in order to solve problems such as a reduction in deposition uniformity due to a sputtering failure, etc., a cover 460 is disposed on a surface 451 of a deposition substance 450 contained in a crucible 410, so that a sputtering failure due to bubbles generated inside the deposition substance can be prevented, and a sputtering failure due to a drop of the deposition substance condensed on a nozzle can be prevented, thereby improving deposition uniformity.
While the invention has been described with reference to the embodiments shown in the drawings, it is intended that the same be illustrative and that various modifications and equivalent other embodiments will be apparent to those skilled in the art from this disclosure. Therefore, the true technical scope of the present invention should be determined based on the technical idea of the claims.

Claims (20)

1. A manufacturing apparatus of a display device, comprising:
a crucible containing a deposition substance;
a nozzle disposed at one side of the crucible to guide a path along which the deposition substance is ejected toward a substrate; and
a cover disposed on a surface of the deposition substance contained in the crucible.
2. The manufacturing apparatus of a display device according to claim 1,
the cover is directly disposed on a surface of the deposition substance contained in the crucible.
3. The manufacturing apparatus of a display device according to claim 1,
the surface of the deposition substance contained in the crucible has a first area, and the lid has a second area smaller than the first area.
4. The manufacturing apparatus of a display device according to claim 3,
the cover exposes at least a portion of a surface of the deposition substance contained in the crucible.
5. The manufacturing apparatus of a display device according to claim 4,
the at least a portion of the exposed surface of the deposition substance is 10% to 50% of the total area of the surface of the deposition substance.
6. The manufacturing apparatus of a display device according to claim 1,
the deposition substance contained in the crucible has a first specific gravity, and the lid has a second specific gravity smaller than the first specific gravity.
7. The manufacturing apparatus of a display device according to claim 1,
the deposition substance contained in the crucible includes silver.
8. The manufacturing apparatus of a display device according to claim 1,
the cap includes at least one of carbon, graphite, pyrolytic boron nitride, pyrolytic graphite, and mullite.
9. The manufacturing apparatus of a display device according to claim 1,
the cover is provided in a circular shape.
10. The manufacturing apparatus of a display device according to claim 1,
the cover is provided in a polygonal shape.
11. The manufacturing apparatus of a display device according to claim 1,
the cap has a surface facing the nozzle and formed with projections and recesses.
12. The manufacturing apparatus of a display device according to claim 1,
the crucible is provided in a cylindrical shape.
13. The manufacturing apparatus of a display device according to claim 1, further comprising:
a heater heating the deposition material contained in the crucible.
14. The manufacturing apparatus of a display device according to claim 13,
the deposition substance contained in the crucible is heated by the heater to be ejected toward the substrate.
15. A manufacturing apparatus of a display device, comprising:
a mask including an opening;
a crucible containing a deposition substance;
a nozzle disposed at one side of the crucible to guide a path along which the deposition substance is ejected toward a substrate; and
a cover disposed on a surface of the deposition substance contained in the crucible,
wherein the deposition substance contained in the crucible is ejected through the nozzle, and passes through the opening and is deposited on the substrate.
16. The manufacturing apparatus of a display device according to claim 15,
the cover is directly disposed on a surface of the deposition substance contained in the crucible.
17. The manufacturing apparatus of a display device according to claim 15,
the surface of the deposition substance contained in the crucible has a first area, and the lid has a second area smaller than the first area.
18. The manufacturing apparatus of a display device according to claim 15,
the deposition substance contained in the crucible has a first specific gravity, and the lid has a second specific gravity smaller than the first specific gravity.
19. The manufacturing apparatus of a display device according to claim 15,
the deposition substance contained in the crucible includes silver.
20. The manufacturing apparatus of a display device according to claim 15,
the cap includes at least one of carbon, graphite, pyrolytic boron nitride, pyrolytic graphite, and mullite.
CN202011386009.2A 2020-06-26 2020-12-01 Manufacturing device of display device Pending CN113846294A (en)

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KR1020200078808A KR20220001048A (en) 2020-06-26 2020-06-26 Apparatus for manufacturing a display device
KR10-2020-0078808 2020-06-26

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Publication Number Publication Date
CN113846294A true CN113846294A (en) 2021-12-28

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