CN113839294A - Y-type cavity tunable synchronous pulse dual-wavelength laser based on bicrystal - Google Patents
Y-type cavity tunable synchronous pulse dual-wavelength laser based on bicrystal Download PDFInfo
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- 230000001360 synchronised effect Effects 0.000 title claims abstract description 30
- 239000013078 crystal Substances 0.000 claims abstract description 92
- 238000005086 pumping Methods 0.000 claims abstract description 47
- 229910009372 YVO4 Inorganic materials 0.000 claims abstract description 35
- 230000001276 controlling effect Effects 0.000 claims abstract description 5
- 230000001105 regulatory effect Effects 0.000 claims abstract description 4
- 239000000523 sample Substances 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 17
- 230000008878 coupling Effects 0.000 claims description 15
- 238000010168 coupling process Methods 0.000 claims description 15
- 238000005859 coupling reaction Methods 0.000 claims description 15
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- 230000009977 dual effect Effects 0.000 claims description 7
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- 239000000463 material Substances 0.000 claims description 5
- 238000005057 refrigeration Methods 0.000 claims description 5
- 229910000838 Al alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 230000005540 biological transmission Effects 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims description 3
- 238000002310 reflectometry Methods 0.000 claims description 2
- 239000008710 crystal-8 Substances 0.000 description 9
- 230000005855 radiation Effects 0.000 description 6
- 238000000295 emission spectrum Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 3
- 229910017502 Nd:YVO4 Inorganic materials 0.000 description 2
- 230000035559 beat frequency Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 238000005267 amalgamation Methods 0.000 description 1
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/094076—Pulsed or modulated pumping
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/04—Arrangements for thermal management
- H01S3/0405—Conductive cooling, e.g. by heat sinks or thermo-electric elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/04—Arrangements for thermal management
- H01S3/042—Arrangements for thermal management for solid state lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/08086—Multiple-wavelength emission
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
- H01S3/1611—Solid materials characterised by an active (lasing) ion rare earth neodymium
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Abstract
The invention discloses a Y-cavity tunable synchronous pulse dual-wavelength laser based on a double crystal, which comprises Nd, YVO4And Nd: GdVO4The device comprises a crystal, a pumping module, a Y-shaped laser resonant cavity, a heat sink temperature control module and an output module. The pumping module is used for modulating and emitting pulsed pumping light Nd-YVO by a current pulse generator4And Nd: GdVO4The crystal receives the pulse pump light and is excited and amplified to form synchronous pulse dual-wavelength laser after passing through the Y-type laser resonant cavity, and the output module receives and outputs the synchronous pulse dual-wavelength laser regulated by the Y-type laser resonant cavity, wherein Nd is YVO4And Nd: GdVO4The invention realizes the synchronous dual-wavelength pulse laser signal with tunable frequency difference by controlling the pump adjusting module and the heat sink adjusting module.
Description
Technical Field
The invention belongs to the technical field of dual-wavelength lasers and photo-generated terahertz waves, and relates to a Y-cavity tunable synchronous pulse dual-wavelength laser based on a double crystal.
Background
The dual-wavelength laser has great potential in the aspects of coherent terahertz wave generation, medical diagnosis, laser radar and the like. At present, research on dual-wavelength lasers mainly focuses on frequency difference tunable and generation of synchronous pulse signals, mainly because tunable dual-wavelength lasers can generate continuous-frequency radio frequency or terahertz signals through optical frequency beat frequency, and synchronous pulse dual-wavelength lasers with higher peak power density can achieve higher optical heterodyne beat frequency efficiency.
For example, in 2010 P.ZHao achieved simultaneous dual wavelength laser pulse signals at 1047nm and 1053nm with frequency spacing of 1.64THz by using a passive Q-switched crystal and a Nd: YLF crystal (P.ZHao, et al, Compact and portable terrestrial source by mixing two frequencies and a single laser-stage laser, Opt.Lett.35(2010) 3979-. Such lasers are easy to implement for Q-switched pulsing but not easy to implement for frequency-difference tuning mechanisms, and furthermore there are gain-competing effects in such lasers that cause the laser output power to be unstable. Y.Ke proposes a Nd: YVO-based material4/Nd:GdVO4A pulse Dual-Wavelength Laser of a combined crystal and obtains a Tunable Synchronous pulse Dual-Wavelength Laser signal (Y.Ke, et al, A Tunable Synchronous pulse Dual-Wavelength-Laser Based on the Nd: YVO) with the Wavelength of 1063 and 1064nm4/Nd:GdVO4Combined Crystals Pair, IEEE Photonics journal.13(2021) 1-7). However, spatial hole burning in the combined crystal still causes time jitter of the dual wavelength pulsed laser signal.
Disclosure of Invention
The dual-wavelength pulse laser signal generated in the same resonant cavity has gain competition and spatial hole burning effect, so that the power stability of the pulse laser signal is poor and the time sequence jitter is insufficient. The invention provides a Y-cavity tunable synchronous pulse dual-wavelength laser based on a double crystal.
The technical solution of the invention is as follows:
a Y-type cavity tunable synchronous pulse dual-wavelength laser based on bicrystal is characterized by comprising Nd, YVO4And Nd: GdVO4The laser comprises a crystal, a first pumping module, a second pumping module, a laser resonant cavity, a heat sink temperature control module and an output module; the first pumping module and the second pumping module are used for emitting pulse pumping light, and the Nd is YVO4And Nd: GdVO4The crystal receives the pulse pump light and is stimulated and amplified to form synchronous pulse dual-wavelength laser after passing through the laser resonant cavity, the output module receives and outputs the synchronous pulse dual-wavelength laser regulated by the laser resonant cavity, and the Nd is YVO4And Nd: GdVO4The crystal is arranged at the heat sink temperature control module which is used for controlling Nd: YVO4And Nd: GdVO4The temperature of the crystal;
the first pumping module comprises a first current pulse generator, a first continuous pumping source, a first optical fiber, a first collimator, a first aspheric lens and a 45-degree reflector, the output end of the first current pulse generator is connected to the input end of the first continuous pumping source, and pulse pumping light output by the first continuous pumping source sequentially passes through the first optical fiber, the first collimator, the first aspheric lens and the first 45-degree reflector and then is converged to the Nd, namely YVO4The first current pulse generator is modulated to the first continuous pump source to emit pulse pump light, and the 45-degree reflecting mirror is used for reflecting the pulse pump light;
the second pumping module comprises a second current pulse generator, a second continuous pumping source, a second optical fiber, a second collimator and a second aspheric lens, the output end of the second current pulse generator is connected to the input end of the second continuous pumping source, and pulse pumping light output by the second continuous pumping source sequentially passes through the second optical fiber, the second collimator and the second aspheric lens and then is converged to the Nd: GdVO4The second current pulse generator is modulated to a second continuous pumping source to emit pulse pumping light;
the laser resonant cavity comprises a first input mirror and an Nd:YVO4Crystal, second input mirror, Nd: GdVO4Crystal, Brewster polaroid and output mirror, the first input mirror is respectively connected with the Nd and YVO4The crystals are arranged relatively in parallel; the second input mirror is respectively connected with the Nd: GdVO4The crystals are arranged relatively in parallel; the Brewster polaroid is placed in the laser resonant cavity and used for coupling two beams of pulsed light;
the heat sink temperature control modules comprise clampers, bases, semiconductor refrigeration pieces, temperature control probes, front end controllers and PC control ends, wherein the clampers clamp Nd: YVO4And Nd: GdVO4A crystal; the base is arranged at the bottom of the clamp; the semiconductor refrigerating piece is arranged in the middle of the base; the temperature control probe is arranged at the base; the front-end controller is electrically connected with the temperature control probe; the PC control end is electrically connected with the front-end controller; the temperature control probe is used for detecting the temperature of the crystal, the front-end controller is used for automatically adjusting the direction and the magnitude of the power supply current of the semiconductor refrigerating element, and the PC control end is used for setting the temperature control temperature and checking the real-time temperature of the crystal detected by the temperature control probe;
the output module comprises an output coupling mirror and a tail fiber, the output coupling mirror and the output mirror are arranged in parallel relatively, and the tail fiber is connected with the output coupling mirror.
Nd:YVO4And Nd: GdVO4The wavelengths of the excited radiation of the crystal are respectively in Nd and YVO4The crystal and Nd: GdVO4 are in the emission spectrum range of the crystal (as shown in figure 1), so that at 20 ℃, Nd: YVO4Excited radiation wavelength of crystal and Nd: GdVO4The difference of the excited radiation wavelength of the crystal exceeds 1.2nm, and the theoretical frequency difference is more than 300 GHz; on the other hand, YVO is due to Nd4And Nd: GdVO4The crystal is controlled by a heat sink temperature control module, and when the temperature control temperature changes, the Nd is YVO4And Nd: GdVO4The relative temperature of the crystal changes, the wavelength of the emission spectrum of the crystal changes, and the frequency difference of the dual-wavelength laser signal changes correspondingly.
Furthermore, the temperature regulation and control range of the front-end controller is-10 ℃ to 100 ℃, and the front-end controller and the heat sink module jointly form a controlled and adjustable temperature control system.
Further, the base comprises two regular quadrangular prism amalgamations that aluminium alloy material made, and one of them is solid, and another inside has a U type recess for realize the heat exchange, and two regular quadrangular's amalgamation center department sets up a square groove, is used for placing semiconductor refrigeration spare.
Furthermore, the laser resonant cavity is Y-shaped, and the Nd is GdVO4Crystal and Nd-YVO4The crystals were placed at an angle of 67 °.
Further, the crystal is fixedly arranged on the base, the Brewster polaroid is arranged on the base, and the arrangement angle of the Brewster polaroid is adjustable.
Further, YVO is the Nd4Crystal and Nd: GdVO4The two end faces of the crystal are respectively coated with an antireflection film, the first input mirror and the second input mirror are plane reflectors, one side of each plane reflector, close to the crystal, is coated with a high-reflection film and an antireflection film, the output mirror is a plane reflector, and the mirror face of one side of each plane reflector, close to the crystal, is coated with a part of the high-reflection film and the high-reflection film.
Further, YVO is close to Nd by the Brewster polaroid4One side of the crystal is plated with an antireflection film, and GdVO is close to Nd4One side of the crystal is plated with a material that when placed at 56.5 brewster's angle relative to the input beam, the pi-polarized beam has high transmission at 1064nm (Tp-98%), while the sigma-polarized beam has high reflectivity at 1064nm (Rs)>99.9%) of the film.
Compared with the prior art, the invention has the beneficial effects that:
1. the invention adopts Y-shaped cavity structure to overcome the influence of gain competition and space hole burning effect, so that the laser output power of the dual-wavelength laser is stable.
2. The invention can realize the stable synchronization of the dual-wavelength pulse laser signal by adjusting the period of the current pulse signal generator.
3. GdVO by independently adjusting heat sink module4Crystal and Nd: YVO4The crystal outputs the wavelength, thereby realizing the adjustment of the frequency difference of the dual-wavelength pulse laser signal.
Drawings
FIG. 1 shows the Nd: YVO of the present invention4And Nd: GdVO4Crystal emission spectrum.
Fig. 2 is a structural diagram of a dual-crystal-based Y-cavity tunable synchronous pulse dual-wavelength laser in an embodiment of the present invention.
Fig. 3 is a schematic diagram of laser signals output by a dual-wavelength pulse laser according to an embodiment of the present invention.
Detailed Description
The following are specific embodiments of the present invention and are further described with reference to the drawings, but the present invention is not limited to these embodiments.
Example 1
Referring to FIG. 2, a Y-cavity tunable synchronous pulse dual-wavelength laser based on bicrystal comprises Nd: YVO4Crystal 8 and Nd: GdVO4The device comprises a crystal 14, a pumping module, a laser resonant cavity, a heat sink temperature control module and an output module; the pump module emits pulsed pump light (Nd: YVO)4Crystal 8 and Nd: GdVO4The crystal 14 receives the pump light and is stimulated and amplified to form synchronous pulse dual-wavelength laser after passing through the laser resonant cavity, and the output module receives and outputs the synchronous pulse dual-wavelength laser adjusted by the laser resonant cavity; nd: YVO4Crystal 8 and Nd: GdVO4The crystal 14 is arranged in a heat sink temperature control module for controlling Nd: YVO4Crystal 8 and Nd: GdVO4The temperature of the crystal 14.
The pumping module comprises a first current pulse generator 1, a second current pulse generator 20, a first continuous pumping source 2, a second continuous pumping source 19, a first optical fiber 3, a second optical fiber 18, a first collimator 4, a second collimator 17, a first aspheric lens 5, a second aspheric lens 16 and a 45-degree reflector 6; the first pumping source 2 is converged to Nd, YVO through a first optical fiber 3, a first collimator 4, a first aspheric lens 5 and a 45-degree reflector 6 in sequence4A crystal 8; the second pump source 19 passes through the second optical fiber 18, the second collimator 17 and the second collimator in sequenceThe biaspheric lens 16 converges to Nd: GdVO4 A crystal 14;
wherein, the first current pulse generator 1 and the second current pulse generator 20 are waveform generators, and the first continuous pumping source 2 and the second continuous pumping source 19 are laser diodes with output center wavelength of 808 nm; the first optical fiber 3 and the second optical fiber 18 are multimode optical fibers having a core diameter of 400 μm; the first collimator 4 and the second collimator 17 are plano-convex lenses, and the focal length is 30 mm; the reflector 6 is a 45-degree plane reflector; the focal lengths of the first aspherical lens 5 and the second aspherical lens 16 are 38 mm.
The laser resonant cavity is Y-shaped and comprises a first input mirror 7, a second input mirror 15, Nd and YVO4Crystal 8 and Nd: GdVO4Crystal 14, Brewster's polarizer 10, and output mirror 26, Nd: YVO4Crystal 8 and Nd: GdVO4The c-axis orthogonal placement of the crystal 14 produces polarized beams in the pi and sigma directions. The axial cross section dimension of the cutting tool is 3mm multiplied by 3mm, the cutting tool is a-axis cutting, Nd is YVO4Crystal 8 and Nd: GdVO4Both end surfaces of the crystal 14 are coated with antireflection films (AR @808nm)&1064nm)。Nd:GdVO4Crystal and Nd: YVO4The crystals were placed at an angle of 67 °. The first input mirror 7 and the second input mirror 15 are plane mirrors, and one side of the plane mirror close to the crystal is plated with a high reflection film (HR @1064nm) and an antireflection film (AR @808 nm). The output mirror 26 is a plane mirror, and the mirror surface of the plane mirror close to the crystal is plated with a part of high reflection film (R ═ 90% @1064nm) and high reflection film (HR @808 nm). The brewster polarizer 10 is coated with an anti-reflection film (AR @1064nm) on the side near crystal 8, and a high transmission at 1064nm (Tp ═ 98%) for the pi-polarized beam and a high reflection at 1064nm (Rs) for the sigma-polarized beam when placed at a brewster angle (56.5 °) relative to the input beam for the side near crystal 14>99.9%) of the film. The Brewster's polarizer 10 has dimensions of 16mm by 10mm by 2mm and the material is Corning 7980.
Wherein YVO is the Nd4And Nd: GdVO4The wavelengths of the excited radiation of the crystal are respectively in Nd and YVO4Crystal and Nd: GdVO4The crystal emission spectrum (as shown in FIG. 1) is within the range, so that at 20 ℃, Nd: YVO4Excited radiation wavelength of crystal and Nd: GdVO4Of crystalsThe difference of the stimulated radiation wavelength is more than 1.2nm, and the theoretical frequency difference is more than 300 GHz; on the other hand, YVO is due to Nd4And Nd: GdVO4The crystal is controlled by a heat sink temperature control module, and when the temperature control temperature changes, the Nd is YVO4And Nd: GdVO4The relative temperature of the crystal changes, and the emission spectrum wavelength of the crystal changes, so that the frequency difference of the dual-wavelength laser signal can be tuned.
The heat sink temperature control module comprises clampers 9 and 13, a base 11, a semiconductor refrigerating piece 12, a temperature control probe 21, a front end controller 23 and a PC control end 25, wherein the clampers 9 and 13 clamp the crystals 8 and 14 respectively; the base 11 is arranged at the bottom of the holders 9 and 13; the semiconductor refrigerating piece 12 is arranged in the middle of the base 11; the temperature control probe 21 is arranged on the base 11; the front end controller 23 is electrically connected with the temperature control probe 21; the PC control terminal 25 is electrically connected to the front-end controller 23. The temperature control probe 21 is used for detecting the temperature of the crystal, the front-end controller 23 is used for automatically adjusting the direction and the magnitude of the power supply current of the semiconductor refrigerating element 12, and the PC control end 25 is used for setting the temperature control temperature and checking the real-time temperature of the crystal detected by the temperature control probe.
The holders 9 and 13 are made of aluminum alloy material and are composed of an upper square prism and a lower square prism which are connected by screws, and a square groove with the diameter of 3.2mm multiplied by 3.2mm is arranged at the center of the splicing and is used for placing the crystal wrapped by the indium foil.
The semiconductor refrigerating piece 12 is a semiconductor refrigerating piece with the model number of TEC1-12703, and the maximum refrigerating power of the semiconductor refrigerating piece is 36W.
The base 11 is composed of two regular quadrangular prisms made of aluminum alloy materials, one of the regular quadrangular prisms is solid, the other regular quadrangular prism is internally provided with a U-shaped groove, the U-shaped groove is provided with a water outlet and a water inlet which are used for realizing heat exchange, and the center of the base is provided with a square groove with the size of 31mm multiplied by 1.6mm which is used for placing the semiconductor refrigerating piece 12. The base serves to fix the holders 9 and 13, the brewster polarizer 10, the semiconductor refrigeration element 12 and to improve the stability of temperature control during the heat exchange process.
The front-end controller 23 is a model TCB-NA semiconductor refrigeration chip temperature control board, and is based on a PID control algorithm to further realize temperature regulation from-10 ℃ to 100 ℃.
The temperature control probe 21 is a thermistor (NTC) having a resistance of 10K Ω, and its B value is 3950 (the B value is a parameter describing physical characteristics of the thermistor material, i.e., a thermal sensitivity index, and the larger the B value, the higher the sensitivity of the thermistor).
The PC control terminal 25 is a computer equipped with serial port debugging software. The PC control end 25 is electrically connected with the front-end controller 23 through a data line 24, and the data line 24 is a serial port line from USB to RS-232.
The front-end controller 23 is electrically connected with the temperature control probe 21 through a lead 22, and the lead 22 is a dual-core copper lead.
The output module comprises an output coupling mirror 27 and a tail fiber 28, wherein the output coupling mirror 27 is arranged opposite to and parallel to the output mirror 26, and the tail fiber 28 is connected with the output coupling mirror 27. The output coupling mirror 27 is used to improve the coupling efficiency of the dual-wavelength laser and to improve the output power. The pigtail 28 is a multimode fiber with a core diameter of 400 μm; the output coupling mirror 27 is an aspheric lens with a coupling efficiency as high as 85%.
The temperature control range of the front-end controller 23 is-10 ℃ to 100 ℃, and the front-end controller and the heat sink module jointly form a temperature control system.
In addition, the disclosed synchronized pulse dual-wavelength laser of this embodiment needs auxiliary devices such as lens support, screw to stabilize the whole laser device and keep the consistency of the optical path center height, then through working parameters such as position, angle of adjusting input mirror, brewster polaroid and speculum for pulse dual-wavelength laser signal exports smoothly. Finally, the dual-wavelength laser in this embodiment can realize the output of the synchronous pulse dual-wavelength laser with the center wavelength of about 1060nm and tunable frequency difference, and when the period of the current pulse generator is set to 9 μ s, the amplitude is 5V, and the continuous pumping output power is 3.8W, the synchronous pulse laser signal of the dual-wavelength laser is as shown in fig. 3.
The working principle of the Y-cavity tunable synchronous pulse dual-wavelength laser based on the bicrystal provided in the embodiment is as follows: firstly, the number of reversed particles in the laser resonant cavity is controlled below a threshold value by controlling a continuous pumping source, and then current is passed throughPulse generator superposes pulse pumping to make the number of particles in resonant cavity instantaneously exceed threshold value to trigger Nd-YVO4Crystal and Nd: GdVO4The crystal is excited to radiate to generate laser pulse, and the period of the current pulse generator is regulated to realize the synchronization of dual-wavelength pulse laser signals. YVO is added by adjusting the temperature of the heat sink module4And Nd: GdVO4The output wavelength of the crystal can change along with the change of temperature, thereby realizing the tunable frequency difference. The Y-type laser resonant cavity is utilized to overcome gain competition and space hole burning effect, the stability of the synchronous pulse dual-wavelength laser is ensured, and stable synchronous pulse dual-wavelength laser output with tunable frequency difference is finally obtained.
The specific embodiments described herein are merely illustrative of the spirit of the invention. Various modifications or additions may be made to the described embodiments or alternatives may be employed by those skilled in the art without departing from the spirit or ambit of the invention as defined in the appended claims.
Claims (7)
1. A Y-type cavity tunable synchronous pulse dual-wavelength laser based on bicrystal is characterized by comprising Nd, YVO4And Nd: GdVO4The laser comprises a crystal, a first pumping module, a second pumping module, a laser resonant cavity, a heat sink temperature control module and an output module; the first pumping module and the second pumping module are used for emitting pulse pumping light, and the Nd is YVO4And Nd: GdVO4The crystal receives the pulse pump light and is stimulated and amplified to form synchronous pulse dual-wavelength laser after passing through the laser resonant cavity, the output module receives and outputs the synchronous pulse dual-wavelength laser regulated by the laser resonant cavity, and the Nd is YVO4And Nd: GdVO4The crystal is arranged at the heat sink temperature control module which is used for controlling Nd: YVO4And Nd: GdVO4The temperature of the crystal;
the first pumping module comprises a first current pulse generator, a first continuous pumping source, a first optical fiber, a first collimator, a first aspheric lens and a 45-degree reflector, and the first current pulse generatorThe output end of the generator is connected to the input end of the first continuous pumping source, and the pulse pumping light output by the first continuous pumping source sequentially passes through the first optical fiber, the first collimator, the first aspheric lens and the first 45-degree reflector and then is converged to the Nd: YVO4The first current pulse generator is modulated to the first continuous pump source to emit pulse pump light, and the 45-degree reflecting mirror is used for reflecting the pulse pump light;
the second pumping module comprises a second current pulse generator, a second continuous pumping source, a second optical fiber, a second collimator and a second aspheric lens, the output end of the second current pulse generator is connected to the input end of the second continuous pumping source, and pulse pumping light output by the second continuous pumping source sequentially passes through the second optical fiber, the second collimator and the second aspheric lens and then is converged to the Nd: GdVO4The second current pulse generator is modulated to a second continuous pumping source to emit pulse pumping light;
the laser resonant cavity comprises a first input mirror, an Nd and a YVO4Crystal, second input mirror, Nd: GdVO4Crystal, Brewster polaroid and output mirror, the first input mirror is respectively connected with the Nd and YVO4The crystals are arranged relatively in parallel; the second input mirror is respectively connected with the Nd: GdVO4The crystals are arranged relatively in parallel; the Brewster polaroid is placed in the laser resonant cavity and used for coupling two beams of pulsed light;
the heat sink temperature control modules comprise clampers, bases, semiconductor refrigeration pieces, temperature control probes, front end controllers and PC control ends, wherein the clampers clamp Nd: YVO4And Nd: GdVO4A crystal; the base is arranged at the bottom of the clamp; the semiconductor refrigerating piece is arranged in the middle of the base; the temperature control probe is arranged at the base; the front-end controller is electrically connected with the temperature control probe; the PC control end is electrically connected with the front-end controller; the temperature control probe is used for detecting the temperature of the crystal, the front-end controller is used for automatically adjusting the direction and the magnitude of the power supply current of the semiconductor refrigerating element, and the PC control end is used for setting the temperature controlTemperature and checking the real-time temperature of the crystal detected by the temperature control probe;
the output module comprises an output coupling mirror and a tail fiber, the output coupling mirror and the output mirror are arranged in parallel relatively, and the tail fiber is connected with the output coupling mirror.
2. The twin crystal based Y-cavity tunable simultaneous pulse dual wavelength laser of claim 1, wherein the temperature regulation range of said front end controller is-10 ℃ to 100 ℃, and said front end controller and said heat sink module together form a controlled and adjustable temperature control system.
3. The twin crystal based Y-cavity tunable synchronous pulse dual wavelength laser as defined in claim 1 wherein said base is made of two square prisms made of aluminum alloy material, one of which is solid and the other has a U-shaped groove inside for heat exchange, and a square groove is disposed at the center of the two square prisms for placing said semiconductor refrigerating element.
4. The bicrystal-based Y-cavity tunable synchronous pulse dual-wavelength laser as claimed in claim 1, wherein the laser resonant cavity is Y-shaped, and the Nd: GdVO4Crystal and Nd-YVO4The crystals were placed at an angle of 67 °.
5. The twin crystal based Y-cavity tunable simultaneous pulse dual wavelength laser as defined in claim 1 wherein said crystal is fixedly disposed on said base, said brewster's polarizer is disposed on said base, and the angle at which said brewster's polarizer is disposed is adjustable.
6. The twin crystal-based Y-cavity tunable simultaneous pulse dual wavelength laser of claim 1, wherein YVO is Nd4Crystal and Nd: GdVO4The two end faces of the crystal are plated with antireflection films, and the first input mirrorAnd the second input mirror is a plane mirror, one side of the plane mirror, which is close to the crystal, is plated with a high-reflection film and an antireflection film, the output mirror is a plane mirror, and the mirror surface of the plane mirror, which is close to one side of the crystal, is plated with a part of the high-reflection film and the high-reflection film.
7. The twin crystal based Y-cavity tunable simultaneous pulse dual wavelength laser of claim 1 in which said brewster's polarizer is close to said Nd: YVO4One side of the crystal is plated with an antireflection film, and GdVO is close to Nd4One side of the crystal is plated with a material that when placed at 56.5 brewster's angle relative to the input beam, the pi-polarized beam has high transmission at 1064nm (Tp-98%), while the sigma-polarized beam has high reflectivity at 1064nm (Rs)>99.9%) of the film.
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Citations (2)
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| CN101572379A (en) * | 2009-05-19 | 2009-11-04 | 北京国科世纪激光技术有限公司 | Three-band pulsing laser |
| CN109586153A (en) * | 2019-01-02 | 2019-04-05 | 中国科学院上海光学精密机械研究所 | Neodymium-doped lithium fluoride yttrium nanosecond pulse blue laser |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101572379A (en) * | 2009-05-19 | 2009-11-04 | 北京国科世纪激光技术有限公司 | Three-band pulsing laser |
| CN109586153A (en) * | 2019-01-02 | 2019-04-05 | 中国科学院上海光学精密机械研究所 | Neodymium-doped lithium fluoride yttrium nanosecond pulse blue laser |
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