CN113838887B - Self-powered all-perovskite light-emitting diode - Google Patents
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K65/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element and at least one organic radiation-sensitive element, e.g. organic opto-couplers
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- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
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- H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
- H10K39/10—Organic photovoltaic [PV] modules; Arrays of single organic PV cells
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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Abstract
A self-powered full perovskite light-emitting diode belongs to the technical field of electroluminescent devices. The device comprises a transparent conductive substrate, a carrier transmission layer, a perovskite light absorption layer, a connection layer, a perovskite active layer, a carrier injection layer and a transparent electrode which are sequentially arranged from bottom to top; the junction layer is a difunctional carrier transmission layer and is simultaneously used as a carrier extraction layer of the perovskite solar cell and a carrier injection layer of the perovskite light-emitting diode. The perovskite solar cell is self-powered, an external power supply is not needed, the problem of continuous endurance of the device is effectively solved, the application scene of the device is enriched, the size of the device is greatly reduced, and the miniaturization and integration of the device are facilitated; the self-powered all-perovskite light-emitting diode provided by the invention has the advantages of simple preparation process, time and energy saving and convenience for large-scale production.
Description
Technical Field
The invention belongs to the technical field of electroluminescent devices, and particularly relates to a self-powered all-perovskite light-emitting diode.
Background
The light-emitting diode has the advantages of long service life, energy conservation, small volume and the like, and is widely applied to the living field. The organic light emitting diode currently used is limited in use in the field of higher resolution due to insufficient color purity. Perovskite material is an excellent semiconductor material, is widely used for solar cells, and has the highest photoelectric conversion efficiency of 25.5% in the prior Perovskite Solar Cells (PSCs), and is comparable with that of the traditional silicon-based solar cells. Meanwhile, perovskite materials are also used for constructing light-emitting diodes with high brightness, high efficiency and narrow emission line width, and the band gap of the perovskite materials can be flexibly regulated and controlled by changing the components of the perovskite materials, so that full-spectrum light emission is realized. However, most of the conventional leds require an external power source to start the operation, and the external power source is inconvenient for the leds to use in emergency conditions. The full perovskite solar cell and the light-emitting diode integrated device are connected in series simply through wires to form a closed loop, and the existence of the wires connected in series between the devices can lead the structure to not really realize the miniaturization and integration of the devices.
Disclosure of Invention
The invention aims to solve the problems in the background technology, and provides a self-powered all-perovskite light-emitting diode, which realizes the integration of a perovskite solar cell and a perovskite light-emitting diode.
In order to achieve the above purpose, the technical scheme adopted by the invention is as follows:
the self-powered all-perovskite light-emitting diode is characterized by comprising a transparent conductive substrate, a carrier transmission layer, a perovskite light absorption layer, a connecting layer, a perovskite active layer, a carrier injection layer and a transparent electrode which are sequentially arranged from bottom to top; the junction layer is a difunctional carrier transmission layer and is simultaneously used as a carrier extraction layer of the perovskite solar cell and a carrier injection layer of the perovskite light-emitting diode.
Further, the linking layer is an electron transport material or a hole transport material, the carrier transport layer is an electron transport layer or a hole transport layer, and the carrier injection layer is a hole injection layer or an electron injection layer.
Further, when the linking layer is an electron transport material, the carrier transport layer is a hole transport layer, and the carrier injection layer is a hole injection layer; when the linking layer is a hole transport material, the carrier transport layer is an electron transport layer and the carrier injection layer is an electron injection layer.
Further, when the junction layer is an electron transport material, a hole injection promoting layer is further provided between the perovskite active layer and the carrier (hole) injection layer.
Further, when the junction layer is an electron transport material, the junction layer can be used as an electron extraction material of the perovskite solar cell and an electron injection material of the perovskite light-emitting diode at the same time, specifically, znO and Mg: znO (Mg and ZnO)The molar ratio is (0.01-0.1): 1) ZnO PEI (PEI is polyetherimide, the mass ratio of ZnO to PEI is 5:1 to 10: 1) BCP (2, 9-dimethyl-4, 7-diphenyl-1, 10-phenanthroline), PCBM ([ 6, 6)]-phenyl-C 61 -methyl butyrate, C 60 And the like, the thickness of the layer being 30-100nm.
Further, when the linking layer is a hole transport material, the linking layer can be used as a hole extraction material of a perovskite solar cell and a hole injection material of a perovskite light-emitting diode, specifically NiO x (x=0.85-1), PEDOT: PSS (poly 3, 4-ethylenedioxythiophene/polystyrene sulfonate, the molar ratio of PEDOT to PSS is 1 (2-20)), PTAA (poly [ bis (4-phenyl) (2, 4, 6-trimethylphenyl) amine)]) And the like, the thickness of the layer being 30-100nm.
Furthermore, the absorption range of the perovskite light absorption layer material to light is larger than that of the perovskite active layer material, and the thickness of the perovskite light absorption layer is regulated and controlled at the same time, so that the total absorption of incident light is realized, and the photovoltaic effect generated by the influence of the light on the perovskite active layer is avoided; correspondingly, the perovskite light absorbing layer is Made of (MA) PbX 3 (X＝Br、Cl)(MA + Is CH 3 (NH 3 ) + )、(MA)PbI 3-x Cl x (x＝1～2)、(MA)PbI 3-x Br x (x＝1～2)、(MA) 1-x (DMA) x PbI 3 (x=0.70 to 0.95) (DMA is dimethylamine molecule), cs 0.05 ((FA) 1-x (MA) x ) 0.95 Pb(I 1-x Br x ) 3 (x＝0.05～0.95)(FA + Is CH (NH) 2 ) 2 + )、(FA) 0.6 Cs 0.4 Pb(I 0.65 Br 0.35 ) 3 And the like, wherein the thickness of the perovskite light absorption layer is 400-1000nm; the perovskite active layer material is (MA) PbI 3 、CsPbX 3 (X＝Cl、Br、I)、(NMA) 2 (FA) n-1 Pb n I 3n+1 (n=0.5 to 0.9) (NMA is 1-naphthylmethylamine ion), (FA) 1–x (GA) x PbBr 3 (x＝0.2～0.95)(GA + Is CH 6 N 3 + ) And the like, the perovskite active layer has a thickness of 40 to 100nm.
Furthermore, the perovskite light absorbing layer can also be of a multilayer structure, and when the connecting layer is an electron transport material, the perovskite light absorbing layer is of a multilayer structure composed of a first perovskite light absorbing layer, an electron transport layer, an ITO film, a hole transport layer and a second perovskite light absorbing layer which are sequentially arranged from bottom to top; when the linking layer is a hole transport material, the linking layer is a multi-layer structure composed of a first perovskite light absorption layer, a hole transport layer, an ITO film, an electron transport layer and a second perovskite light absorption layer which are sequentially arranged from bottom to top.
Wherein the material of the first perovskite light absorption layer is (FA) 0.83 Cs 0.17 Pb(I 0.5 Br 0.5 ) 3 、(FA) 0.8 Cs 0.2 Pb(I 0.7 Br 0.3 ) 3 、(FA) 0.6 Cs 0.4 Pb(I 0.65 Br 0.35 ) 3 、Cs 0.05 (FA) 0.8 (MA) 0.15 PbI 2.55 Br 0.45 、Cs 0.2 (FA) 0.8 PbI 1.8 Br 1.2 Etc.; the material of the second perovskite light absorption layer is (FA) 0.75 Cs 0.25 Sn 0.5 Pb 0.5 I 3 、((FA)SnI 3 ) 0.6 ((MA)PbI 3 ) 0.4 、(MA) 0.3 (FA) 0.7 Sn 0.5 Pb 0.5 I 3 、(FA) 0.5 (MA) 0.45 Cs 0.05 Pb 0.5 Sn 0.5 I 3 Etc.
Further, the carrier transport layer is an electron transport layer or a hole transport layer, and the thickness of the carrier transport layer is 50-100nm. Wherein the hole transport layer is made of NiO x (x=0.85-1), PEDOT: PSS, PTAA; the electron transport layer is made of TiO 2 、SnO 2 、Mg:ZnO、PCBM、BCP、C 60 Etc.
Further, the carrier injection layer is a hole injection layer or an electron injection layer, and the thickness of the carrier injection layer is 30-200nm. Wherein the hole injection layer is made of FB (fluorene-2, 7-diboronic acid pinacol ester), TFB (poly (9, 9-dioctylfluorene-CO-N- (4-butylphenyl) diphenylamine)), TPD (N, N '-diphenyl-N, N' -di (3-methylphenyl) -1,1 '-biphenyl-4, 4' -diamine), TPBI (1, 3, 5-tris (1-phenyl-1H-benzimidazol-2-yl) benzene); the electron injection layer is made of ZnO, PEI, CBP (4, 4' -di (9-carbazole) biphenyl) and the like.
Further, the transparent electrode is made of LiF/Al and Cs 2 CO 3 and/Al, etc., the transparent conductive layer having a thickness of 80-200nm.
Further, the transparent conductive substrate is a flexible transparent conductive substrate such as ITO (indium tin oxide) conductive glass, FTO (fluorine tin oxide) conductive glass, or PEN (polyethylene naphthalate) plastic film with ITO.
Further, the hole injection promoting layer is made of MoO 3 Or PEI, with a thickness of 2-15nm.
Compared with the prior art, the invention has the beneficial effects that:
according to the self-powered all-perovskite light-emitting diode provided by the invention, the perovskite solar cell is adopted for self power supply, an external power supply is not needed, the problem of continuous endurance of the device is effectively solved, the application scene of the device is enriched, the size of the device is greatly reduced, and the miniaturization and integration of the device are facilitated; the self-powered all-perovskite light-emitting diode provided by the invention has the advantages of simple preparation process, time and energy saving and convenience for large-scale production.
Drawings
FIG. 1 is a schematic diagram of the self-powered all-perovskite light emitting diode according to example 1 (a) and example 2 (b) of the present invention;
FIG. 2 is a graph showing the energy level relationship of the materials of each layer when the junction layer is an electron transport material;
FIG. 3 is a graph showing the energy level relationship of the layers of material when the tie layer is a hole transporting material;
fig. 4 is a schematic structural diagram of a perovskite stacked solar cell-perovskite light emitting diode integrated device provided in embodiment 3 of the invention.
Detailed Description
The technical scheme of the invention is described in detail below with reference to the accompanying drawings and examples.
According to the self-powered all-perovskite light-emitting diode provided by the invention, photons are absorbed by the perovskite light-absorbing layer to generate excitons under the illumination condition, the excitons are separated at the interface of the perovskite light-absorbing layer and the adjacent layer to generate electrons and holes, the electrons are injected into the electron transport layer, and the holes are injected into the hole transport layer. And the photo-generated carriers are transmitted by utilizing the lead between the transparent conductive substrate and the transparent electrode of the perovskite light-emitting diode and the connecting layer respectively, and finally the photo-generated carriers are injected into the active layer.
Example 1: self-powered full perovskite green light emitting diode with electron transport layer as the connecting layer
Fig. 1 (a) is a schematic structural diagram of a self-powered all-perovskite light emitting diode provided in embodiment 1; wherein 1 is transparent conductive substrate ITO, 2 is hole transport layer PTAA, 3 is perovskite light absorption layer Cs 0.05 ((FA) 0.95 (MA) 0.05 ) 0.95 Pb(I 0.95 Br 0.05 ) 3 4 is PCBM/BCP of the linking layer and 5 is perovskite active layer (FA) 1–x (GA) x PbBr 3 6 is a hole injection promoting layer MoO 3 And 7 is a hole injection layer TPBI, and 8 is a transparent electrode LiF/Al. Wherein the 1, 2, 3 and 4 layers form a p-i-n type perovskite solar cell, and the 4, 5, 6 and 8 layers form an n-i-p type perovskite light emitting diode. The energy level relationship of the selected materials satisfies fig. 2, wherein (1) is a hole transport material, (2) is a perovskite light absorption material, (3) is an electron transport junction layer material, (4) is a perovskite active layer material, and (5) is a hole injection material.
The preparation method of the self-powered all-perovskite light-emitting green diode provided in the embodiment 1 specifically comprises the following steps:
step 1, sequentially washing a transparent ITO conductive substrate by using acetone and isopropanol in an ultrasonic manner, and processing the transparent ITO conductive substrate in an ultraviolet ozone cleaning instrument for 30 minutes after blowing;
step 2, spin-coating a chlorobenzene solution (10 mg/mL) of PTAA on the ITO substrate, and annealing at 100 ℃ for 5-10 min;
step 3, weighing CsI, FAI, pbI 2 、MABr、PbBr 2 Dissolved in a mixed solvent of DMF (N, N-dimethylformamide) and DMSO (dimethyl sulfoxide) (the volume ratio of DMF to DMSO is4:1) to give Cs 0.05 ((FA) 0.95 (MA) 0.05 ) 0.95 Pb(I 0.95 Br 0.05 ) 3 30mol% MACl is added to the precursor solution; then spin-coating for 10s and 30s on the PTAA layer at 1000rpm and 5000rpm respectively, dripping 100 mu L of chlorobenzene anti-solvent in the first 10s after spin-coating, and heating and annealing at 150 ℃ for 40min after spin-coating;
step 4, sequentially depositing 30nm PCBM and 8nm BCP on the perovskite layer obtained in the step 3 by adopting a vacuum evaporation method to obtain a joint layer;
step 5, FABr, GABr and PbBr 2 Dissolving in 0.5ml anhydrous N, N-dimethylformamide to obtain a precursor solution; then, 0.15ml of the precursor solution was dropped into a crystallization-inducing liquid composed of 5ml of toluene, 2ml of 1-butanol, 0.3ml of oleic acid and 24.2. Mu.l of n-decylamine, and mixed with vigorous stirring for 10 minutes; spin-coating at 3000rpm for 60s, and annealing at 80deg.C for 10min to obtain perovskite active layer;
step 6, vacuum evaporation of 4nm MoO 3 ；
Step 7, vacuum thermal deposition of 40nm TPBI;
and 8, vacuum thermal deposition of 5nm LiF and 120nm Al as transparent electrodes.
Example 2: self-powered full perovskite blue light emitting diode with hole transport layer as the connecting layer
Fig. 1 (b) is a schematic structural diagram of a self-powered all-perovskite light emitting diode provided in embodiment 2; wherein 1 'is transparent conductive substrate FTO, 2' is electron transport layer TiO 2 3' is perovskite light absorption layer MAPbI 3-x Cl x The PEDOT is a joint layer PEDOT, PSS/PTAA, and the perovskite active layer CsPbBr is 5 3 The quantum dots, 6 'are electron injection layers ZnO, and 7' are transparent electrodes LiF/Al. The energy levels of the materials selected by the p-i-n type perovskite light-emitting diode of the 4 '-7' layers meet the requirement of FIG. 3, wherein (1) is an electron transport material, (2) is a perovskite light absorption material, (3) is a hole transport linking layer material, (4) is a perovskite active layer material and (5) is an electron injection material.
The preparation method of the self-powered all-perovskite light-emitting blue diode provided in the embodiment 2 specifically comprises the following steps:
step 1, sequentially washing a transparent FTO conductive substrate by using acetone and isopropanol in an ultrasonic manner, and processing the transparent FTO conductive substrate in an ultraviolet ozone cleaning instrument for 30min after blowing;
step 2, dense TiO 2 Is prepared from the following steps: transferring 369 mu L of tetraisopropyl titanate into a reagent bottle 1, transferring 2.53mL of ethanol, and magnetically stirring and mixing; transferring 35 mu L of 2M hydrochloric acid into the reagent bottle 2, transferring 2.53mL of ethanol, and magnetically stirring and mixing; dropwise adding the solution in the reagent bottle 2 into the reagent bottle 1, stirring for 2h, and filtering with a filter head to obtain compact TiO 2 A precursor liquid; compact TiO 2 The precursor liquid drops are fully spread on the FTO, spin coating conditions are 4000rpm and 50s, a hot stage is used for processing for 15min at 150 ℃, and then the chips are placed in a muffle furnace for calcination at 500 ℃ for 1h;
step 3, mesoporous TiO 2 Is prepared from the following steps: m is m Mesoporous TiO2 slurry :m Ethanol Diluting in a ratio of 1:7, magnetically stirring for 2 hours, and then performing ultrasonic treatment for 1 hour; mesoporous TiO 2 The precursor liquid drops are fully paved on the FTO conductive glass, spin coating conditions are 5000rpm and 30s, and the precursor liquid drops are placed on a hot table and treated for 10min at 125 ℃; placing the spin-coated flakes in a muffle furnace for calcination, wherein the calcination temperature is 500 ℃ and the calcination time is 1h;
step 4, pbI 2 Adding the mixture and MAI into 5mL of gamma-butyrolactone in a molar ratio of 1:1 to obtain a precursor liquid 1; to obtain (MA) PbI 3-x Cl x Single crystal, adding CH in the mol ratio of 1:1 in the precursor 1 solution 3 NH 3 Cl and PbCl 2 Partial solute is replaced, and then a precursor solution with the molar ratio of I to Cl of 14:1 is obtained; heating the obtained precursor solution at 70 ℃ and stirring for 12 hours; subsequently, the solution was heated at 120℃for several hours, some small (MA) PbI 3-x Cl x The crystal seeds appear at the bottom of the vial; to prepare a block (MA) PbI 3-x Cl x Single crystal, putting the selected seeds into precursor solution which is stirred for 12 hours at 70 ℃;734Mg (MA) PbI 3-x Cl x Single crystal addition of 600. Mu.L CH 3 NH 2 In a mixed solution of/EtOH (33 wt.%)Then 400 mu L of acetonitrile is added to dilute and synthesize a solution with the concentration of 1.2M, the spin coating speed is 4000-6000 rpm, and the time is 60s, so that the perovskite light absorption layer is obtained;
step 5, spin-coating a PEDOT PSS solution on the light absorption layer at a rotation speed of 6000rpm for 30s, baking at 150 ℃ for 25min, cooling the substrate to room temperature, spin-coating a PTAA chlorobenzene solution of 5mg/mL on the PEDOT PSS layer, and baking at 150 ℃ for 25min;
step 6, csPbBr 3 Spin-coating the quantum dot precursor liquid for 60s at 2000rpm to obtain a perovskite active layer;
step 7, spin-coating ZnO solution at 4000rpm for 60s, and annealing at 100 ℃ for 10min to obtain an electron injection layer ZnO;
step 8, vacuum thermal deposition of LiF with the wavelength of 5nm and Al with the wavelength of 100nm, wherein the vacuum degree is [ (]<10 -4 Pa) as transparent electrodes.
Example 3: perovskite laminated solar cell-perovskite light-emitting diode integrated device-connection layer is electron transmission layer
As shown in fig. 4, a schematic structural diagram of a perovskite stacked solar cell-perovskite light emitting diode integrated device provided in example 3 is shown. Wherein the connecting layer is BCP, the layers I-VIII form a perovskite laminated solar cell, and the layers VIII-XII form a perovskite light-emitting diode. I is transparent conductive substrate ITO, II is hole transport layer PTAA, III is first perovskite light absorption layer (FA) 0.6 Cs 0.4 Pb(I 0.65 Br 0.35 ) 3 IV is electron transport layer C 60 /SnO 2 V is ITO film, VI is hole transport layer PEDOT: PSS/PTAA, VII is second perovskite light absorption layer (FA) 0.5 (MA) 0.45 Cs 0.05 Pb 0.5 Sn 0.5 I 3 VIII is electron transport tie layer C 60 BCP and IX are perovskite active layer CsPbBr 3 X is hole injection promoting layer MoO 3 XI is the hole injection layer TPBI, XII is the transparent electrode layer LiF/Al.
The perovskite stacked solar cell-perovskite light emitting diode integrated device provided in example 3 was specifically prepared by:
step 1, sequentially washing a transparent ITO conductive substrate by using acetone and isopropanol in an ultrasonic manner, and cleaning the transparent ITO conductive substrate for 30min in ultraviolet ozone after blowing;
step 2, spin-coating a chlorobenzene solution (10 mg/mL) of PTAA on the ITO substrate, and annealing at 100 ℃ for 5-10 min;
step 3, preparing perovskite light absorption layer precursor liquid:
will FAI, csI, pbI 2 、PbBr 2 Dissolving in mixed solvent of DMSO and DMF (volume ratio of DMSO to DMF is 3:7) to obtain (FA) 0.6 Cs 0.4 Pb(I 0.65 Br 0.35 ) 3 Perovskite precursor liquid;
will MAI, FAI, csI, pbI 2 、SnI 2 、SnF 2 In a mixed solvent of DMSO and DMF (the volume ratio of DMSO to DMF in the mixed solvent is 3:7), the product (FA) is obtained 0.5 (MA) 0.45 Cs 0.05 Pb 0.5 Sn 0.5 I 3 Perovskite precursor liquid;
step 4, 100 to 200 mu L (FA) 0.6 Cs 0.4 Pb(I 0.65 Br 0.35 ) 3 Spin-coating the precursor liquid on the PTAA layer, spin-coating for 20s and 20s at 1000rpm and 5000rpm respectively, blowing nitrogen into the substrate at 20s to rapidly dry, and then annealing at 65 ℃ for 10min and at 100 ℃ for 10min to obtain a first perovskite light absorption layer;
step 5, C 60 Thermally evaporating the first perovskite light absorption layer to a thickness of 30nm;
step 6, under the vacuum condition, using [ (CH) 3 ) 2 N] 4 Sn and H 2 O is used as a Sn source and an O source respectively, and an atomic layer deposition method is adopted to deposit SnO 2 A thin film with a thickness of 15nm;
step 7, growing an ITO film by magnetron sputtering, wherein the thickness of the ITO film is 10nm;
step 8, spin-coating the PSS solution on the ITO layer at a speed of 5000rpm, and annealing at 100 ℃ for 20min;
step 9, spin-coating 5mg/mL PTAA chlorobenzene solution onto the PEDOT PSS layer, and baking at 150 ℃ for 20min;
step 10, 200. Mu.L (FA) 0.5 (MA) 0.45 Cs 0.05 Pb 0.5 Sn 0.5 I 3 Spin-coating the precursor liquid on the PTAA layer, spin-coating for 20s and 20s at 1000rpm and 5000rpm respectively, blowing nitrogen into the substrate for 20s to rapidly dry, and then annealing for 10min at 65 ℃ and annealing for 10min at 100 ℃ to obtain a second perovskite light absorption layer;
step 11, C 60 Heat evaporated onto the second perovskite light absorbing layer to a thickness of 30nm; preparing 8nm BCP by a vacuum evaporation method; obtaining a connecting layer;
step 12, csBr and PbBr 2 Dissolved in DMSO at a 1.5:1 molar ratio, and then added with phenethyl ammonium bromide (PEABr, 10 wt%) and polyethylene glycol (PEG, 3.8 wt%) to give CsPbBr 3 A precursor liquid; spin-coating the precursor solution on the electron transmission linking layer obtained in the previous step, spin-coating at a speed of 3000rmp for 60s, and annealing at 80 ℃ for 5min to obtain a perovskite active layer;
step 13, vacuum vapor deposition of 5nm MoO 3 ；
Step 14, vacuum thermal deposition of 50nm TPBI;
and 15, vacuum thermal deposition of 3nm LiF and 100nm Al as transparent electrodes.
The embodiments of the present invention have been described above with reference to the accompanying drawings, but the present invention is not limited to the above embodiments, and various changes can be made according to the objects of the invention without departing from the technical principles and inventive concepts of the present invention.
Claims (8)
1. The self-powered all-perovskite light-emitting diode is characterized by comprising a transparent conductive substrate, a carrier transmission layer, a perovskite light absorption layer, a connecting layer, a perovskite active layer, a carrier injection layer and a transparent electrode which are sequentially arranged from bottom to top; the junction layer is a difunctional carrier transmission layer and is simultaneously used as a carrier extraction layer of the perovskite solar cell and a carrier injection layer of the perovskite light-emitting diode;
the connecting layer is an electron transport material or a hole transport material, the carrier transport layer is a hole transport layer or an electron transport layer, and the carrier injection layer is a hole injection layer or an electron injection layer;
when the connecting layer is an electron transport material, the carrier transport layer is a hole transport layer, and the carrier injection layer is a hole injection layer; when the linking layer is a hole transport material, the carrier transport layer is an electron transport layer and the carrier injection layer is an electron injection layer.
2. The self-powered all-perovskite light-emitting diode as claimed in claim 1 wherein when the tie layer is an electron transporting material, a hole injection promoting layer is further provided between the perovskite active layer and the carrier injection layer.
3. The self-powered all-perovskite light-emitting diode as claimed in claim 1 wherein the perovskite light-absorbing layer material absorbs light over a greater range than the perovskite active layer material.
4. The self-powered all-perovskite light-emitting diode according to claim 1, wherein the perovskite light-absorbing layer has a multi-layer structure, and when the linking layer is an electron transport material, the perovskite light-absorbing layer has a multi-layer structure composed of a first perovskite light-absorbing layer, an electron transport layer, an ITO film, a hole transport layer and a second perovskite light-absorbing layer, which are sequentially arranged from bottom to top; when the connecting layer is a hole transport material, the perovskite light absorption layer is a multilayer structure composed of a first perovskite light absorption layer, a hole transport layer, an ITO film, an electron transport layer and a second perovskite light absorption layer which are sequentially arranged from bottom to top.
5. The self-powered all-perovskite light emitting diode of claim 4 wherein the material of the first perovskite light absorbing layer is (FA) 0.83 Cs 0.17 Pb(I 0.5 Br 0.5 ) 3 、(FA) 0.8 Cs 0.2 Pb(I 0.7 Br 0.3 ) 3 、(FA) 0.6 Cs 0.4 Pb(I 0.65 Br 0.35 ) 3 、Cs 0.05 (FA) 0.8 (MA) 0.15 PbI 2.55 Br 0.45 Or Cs 0.2 (FA) 0.8 PbI 1.8 Br 1.2 The method comprises the steps of carrying out a first treatment on the surface of the The material of the second perovskite light absorption layer is (FA) 0.75 Cs 0.25 Sn 0.5 Pb 0.5 I 3 、((FA)SnI 3 ) 0.6 ((MA)PbI 3 ) 0.4 、(MA) 0.3 (FA) 0.7 Sn 0.5 Pb 0.5 I 3 Or (FA) 0.5 (MA) 0.45 Cs 0.05 Pb 0.5 Sn 0.5 I 3 。
6. The self-powered all-perovskite light-emitting diode according to claim 1, wherein when the junction layer is an electron transport material, the material is ZnO, mg, znO, or ZnO PEI, BCP, PCBM, C 60 One or more of the hole transport layers is NiO x PEDOT: one or more of PSS, PTAA, wherein x=0.85 to 1.
7. The self-powered all-perovskite light-emitting diode according to claim 1, wherein when the tie layer is a hole transporting material, the material is NiO x PEDOT: PSS or PTAA, wherein x=0.85 to 1; the electron transport layer is made of TiO 2 、SnO 2 ZnO, PCBM, BCP or C 60 。
8. The self-powered all-perovskite light-emitting diode as claimed in claim 2 wherein the hole injection enhancement layer is MoO 3 Or PEI, with a thickness of 2-15nm.
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