CN106410031B - Organic solar cell with adjustable incident light intensity and preparation method thereof - Google Patents

Organic solar cell with adjustable incident light intensity and preparation method thereof Download PDF

Info

Publication number
CN106410031B
CN106410031B CN201610185708.8A CN201610185708A CN106410031B CN 106410031 B CN106410031 B CN 106410031B CN 201610185708 A CN201610185708 A CN 201610185708A CN 106410031 B CN106410031 B CN 106410031B
Authority
CN
China
Prior art keywords
layer
solar cell
organic solar
photoluminescent
materials
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201610185708.8A
Other languages
Chinese (zh)
Other versions
CN106410031A (en
Inventor
郑燕琼
杨芳
张静
濮文虹
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Shanghai for Science and Technology
Original Assignee
University of Shanghai for Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Shanghai for Science and Technology filed Critical University of Shanghai for Science and Technology
Priority to CN201610185708.8A priority Critical patent/CN106410031B/en
Publication of CN106410031A publication Critical patent/CN106410031A/en
Application granted granted Critical
Publication of CN106410031B publication Critical patent/CN106410031B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Photovoltaic Devices (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

The invention discloses an organic solar cell with adjustable incident light intensity and a preparation method thereof. The donor layer is a conventional organic solar cell material with a strong absorption in the narrow band and the acceptor layer is a non-fullerene or conventional electron transport material. The device of the invention is formed by selecting a photoluminescent layer and depositing the photoluminescent layer on one side of a transparent substrate. The additional increased photons of the organic solar cell will enhance the incident light intensity by the excitation of the photoluminescent layer by sunlight, emitting blue, green or yellow light. And the photoluminescent layer is calcined to obtain photoluminescent intensities with different intensities, so that the solar spectrum is adjusted. The device can increase the incident light intensity by a simple method without other additional light gathering plates, reflection/refraction plates and micro-nano structures, and is adjustable. The device is ultra-thin, the preparation process is simple, and the equipment requirement is low.

Description

Organic solar cell with adjustable incident light intensity and preparation method thereof
Technical Field
The invention relates to an organic optoelectronic device and a preparation method thereof, in particular to an organic solar cell (OPV) and a preparation method thereof, which are applied to the technical field of green solar energy.
Background
Since 1954, bell laboratories in the united states successfully developed silicon solar cells, pioneering the research on photoelectric conversion, and then the research on solar cells rapidly progressed. Due to the defects of high manufacturing cost, complex production process, serious photo-corrosion of a narrow-bandgap semiconductor and the like of the inorganic solar cell, the popularization and application of the solar power generation technology are restricted to a great extent. With the rapid development of the field of organic semiconductors, the popularization and application of low-cost solar power generation technology become possible. Organic solar cells (OPVs) have unique advantages over traditional silicon-based and other inorganic metal compound solar cells: 1. the organic material has light weight and good flexibility; 2. the organic material is easy to design, cut and synthesize a chemical structure without the limitation of resource storage; 3. the preparation process of the device is simple and diversified, and the manufacturing cost is low by adopting solution processing methods such as printing, ink jetting, printing and the like; 4. large area/flexible devices are easy to implement. OPV has become an important development direction for new generation solar cells due to the great potential of the above advantages.
OPVs typically employ p-n heterojunction device structures based on p-type donor and n-type acceptor materials, including double-layer heterojunctions (PHJ), Bulk Heterojunctions (BHJ), and Mixed Heterojunctions (MHJ). In order to improve the photoelectric conversion efficiency of OPV, effective methods are: 1. enlarging the p-n interface of exciton separation and enhancing the separation effect of electrons and holes; 2. inserting an additional hole or electron transport layer to play an exciton blocking effect; 3. designing a novel near-infrared absorption donor material or an acceptor material with adjustable energy level and excellent solubility to enhance light absorption; 4. preparing a cascading OPV (Cascade OPV) with a complex structure to widen the absorption of sunlight; 5. manufacturing a unique micro-nano structure of a substrate layer; 6. the ingenious optical design enhances the condensation or the reflection and refraction effects on the sunlight.
Although the above-mentioned methods for enhancing the photovoltaic conversion efficiency of OPV are effective in some aspects, the conventional methods for enhancing the performance of devices by enhancing the light concentration or the reflection and refraction of sunlight through optical design have certain limitations. 1. A certain physical optical background is needed, and more accurate optical simulation and calculation can be carried out; 2. the structures of the light-gathering plate and the reflection/refraction plate need to be accurately controlled; 3. the manufacturing process is relatively complex, resulting in high cost. This affects the spread of OPV in real application.
Disclosure of Invention
In order to solve the problems in the prior art, the invention aims to overcome the defects in the prior art and provide an organic solar cell with adjustable incident light intensity and a preparation method thereof.
In order to achieve the purpose of the invention, the conception of the invention is as follows:
according to the principle of the organic solar cell device with simple and adjustable incident light intensity, the device is mainly characterized in that complex optical design is not needed, such as adding a light collecting plate, a reflection/refraction plate or preparing a micro-nano structure to enhance the sunlight intensity, and an additional photoluminescent layer can absorb ultraviolet light to emit blue light, green light or yellow light so as to additionally enhance the incident light intensity; and the spectrum of the sunlight which is incident to the subsequent active layer can be adjusted by selecting different luminescent materials and calcining the luminescent layer. The photoluminescent layer is disposed at the non-conductive end of the substrate and therefore its energy level and hole/electron transport properties are not limited.
According to the inventive concept, the following technical scheme is adopted:
an organic solar cell with adjustable incident light intensity is composed of a photoluminescent layer, a transparent substrate, a transparent conductive anode, a hole injection layer, a donor layer, an acceptor layer, an electron transport layer and an electrode cathode layer which are combined in sequence from bottom to top, wherein the donor layer is made of any one material or any mixture of materials in organic solar cell materials with a narrow band system and a set absorption range, the acceptor layer is made of any one material or any mixture of materials in non-fullerene and derivatives or electron transport materials with set energy levels, the thickness of the photoluminescent layer is 5-20nm, the photoluminescent layer is made of any one material or any mixture of various hole transport materials and electron transport materials which have wide band gaps and absorb ultraviolet light to emit visible light, and includes any one or any plural of a quantum dot light emitting material, a fluorescent light emitting material, and a phosphorescent light emitting material.
The thickness of the substrate composed of the transparent substrate and the transparent conductive anode is preferably 100-150nm, the thickness of the hole injection layer is preferably 5-10nm, the thickness of the donor layer is preferably 10-60nm, the thickness of the acceptor layer is preferably 30-50nm, the thickness of the electron transport layer is preferably 5-10nm, and the thickness of the electrode cathode layer is preferably 80-100 nm.
As the above light-inducedThe material composition of the light-emitting layer is preferably 5,10, 15-tribenzyl-5H-diindoo [3,2-a:3 ', 2' -c ] as a hole transport material]-carbazole (TBDI)、N,N’-diphenyl-N,N’-bis(1-naphthylphenyl) -1,1’-biphenyl-4,4’-diamine (α-NPD)、N,N’-diphenyl-N,N’-bis(1-naphthyl) -1,1’-biphenyl-4,4’-diamine (NPB)、 4,4’-bis-9-carbozyl biphenyl(CBP)、tris[4- (5-phenylthiophen-2-yl)phenyl]amine (TPTPA)、4,4’-bis[(N-carbazole)styr yl]Any one or more of biphe nyl (BSB-Cz); the electron-transporting material is preferably tetrafluorocyanoquinodimethane (F4-TCNQ), naphthalene1,4,5, 8-diol (NTCDA), Naphthalene Tetrahydroxydiimide (NTCDI), phenylenolato) aluminum (III), tris (8-hydroxyquinonylato) aluminum (Alq), a phosphorescent diol (BAlq), a phosphorescent diol (III), a phosphorescent diol (IV-TCNQ), a phosphorescent diol (IV-H-D), a phosphorescent diol (IV-D-H-D3)、bis[2-(diphenylp hosphino)phenyl]Any one or more of ether oxide (DPEPO); as the material component of the photoluminescence layer, the quantum dot material is preferably any one or more of ZnO, ZnS, CdS, CdSe and CdTe. The thickness of the photoluminescent layer is determined according to the luminous intensity, the thickness of the material with luminous intensity is relatively thin, and the thickness of the material with weak luminous intensity is relatively thick, so that a certain quantity of emitted photons is achieved.
The material of the substrate layer is preferably any one or more of rigid glass material, transparent polymer flexible material or biodegradable flexible material, wherein the transparent polymer flexible material is any one or more of polyethylene, polymethyl methacrylate, polycarbonate, polyurethane, polyimide resin and polyacrylic acid.
The material of the transparent conductive anode is preferably any one material or any several materials of Indium Tin Oxide (ITO), conductive polymer poly (3,4-ethylene dioxy thiostyrene), poly (phenylenesulfonate) (PEDOT: PSS), graphene (graphene), carbon nanotube (carbon nanotube), metal simple substance nanowire, metal alloy nanowire and metal heterojunction nanowire.
The material of the hole injection layer is preferably：MoO3、V2O5、NiO2、WO3、5,10,15-tribenzyl-5H-diindo lo[3,2-a:3’,2’-c]-carbazole (TBDI)、N,N’-diphenyl-N,N’-bis(1-naphthylphenyl) -1,1’-biphenyl-4,4’-diamine (α-NPD)、N,N’-diphenyl-N,N’-bis(1-naphthyl)- 1,1’-biphenyl-4,4’-diamine (NPB)、4,4’-bis-9-carbozyl biphenyl(CBP)、4,4’-bis [(N-carbazole)styryl]Any one or more of biphenyl (BSB-Cz).
The material of the above-mentioned donor layer is preferably any one or more of a fluorescent material and a red phosphorescent material which mainly absorb visible light in blue-green, yellow and red regions, wherein the fluorescent material which mainly absorbs visible light in blue-green, yellow and red regions is preferably boron sublithocyanine chloride (SubPc), copperphthalocyanine (cupc), chlorellinium phthalocyanine (ClAlPc), zincphthalocyanine (znpc), titanylphthalacyanine (TiOPc), platinum (ii) phthalocyanine (ptp pc) or metal free phthalocyanine (H)2Pc), lead phenopyanine (PbPc), pentalene, tetracene, anthracene, rubrene, bis [2- (4-tert-ylphenylene) benzothiazolateo-N, C2 '] iridium (acetylacetate) (t-bt)2Ir (acac),4- (dicyclomethylene) -2-t-butyl-6- (1,1,7, 7-tetramethylolylidene-9-enyl) -4H-pyran (DCJTB), tetraphenylphenyletherlene (DBP), rubrene, Polythiazole (PT), Poly (3-phenylene) (P3HT), Poly (P, P' -phenylene) (PBP), Poly (2-5) (PTV); wherein the red light phosphor material is bis [2- (2 '-benzothiazenyl) pyridine-N, C3'](aeetylaeetonate) iridium (Btp2Ir (acac) and tris [ 1-phenylisoquinonato-C2, N]iriium(Ⅲ) (Ir(piq)3) Any one or several of them.
As the material component of the receptor layer, the non-fullerene material is preferably 3,4,9, 10-rylenetetracarboxylic bisbenzimide (PTCBI), 3,4,9, 10-rylenetetracarboxylic diimide (PTCDI), 3,4,9, 10-rylenetetracarboxylic diimide (PTCDA), poly (9, 9-dialkylfluorolene-co-phenylthiodiazole (F8BT), or cAny one or more of orthophenylenefluorphytocyanine (F16CuPc), zinc-hexadecahydrophthalenehalocyanine (F16ZnPc), iron (II) hexadecahydrophthalenehalocyanine (F16FePc), cobalt (II) hexadecahydrophthalenehalocyanine (F16CoPc), cobalt (II) hexadecahydrophthalocyanin (Cl16FePc), cobalt (II) hexadecahydrophthalocyanin (Cl16CoPc), hexadecahydrocyanine (DFH-6T), and hexadecahydrophthalene (DCT); the electron-transporting material having the set energy level is preferably a tetrafluorotropane cyanoquinomethanane (F4-TCNQ), a naphthalene1,4,5,8-dianhydride (NTCDA), a naphthalene tetracarboxylic diimide (NTCDI), a naphthalene thiolato aluminum (III) (BAlq), a tris (8-hydroxyquinonate) aluminum (Alq)3)、bis[2-(diphenylphosphino)pheny l]Any one or more of ether oxide (DPEPO).
The material of the electron transport layer is preferably graphene, carbon nanotubes, ZnO, Cs2CO3Any one or any several of 2,2' - (1,3, 5-benzinetryl) -tris (1-phenyl-1-H-benzimidazole) (TPBi), Batiocuprione (BCP), lithium Fluoride (LiF), tris- (8-hydroxyquinonate) aluminum (Alq3), 8-hydroxy-quinonate (Liq), other oxadiazole compounds, quinoxaline compounds, cyano-containing polymers, other nitrogen-containing heterocyclic compounds, organosilicon materials, perfluorinated materials and organoboron materials.
The cathode material of the electrode is preferably any one or more of Au, Al, Ag, magnesium-silver alloy, lithium-aluminum alloy or 3D printed Au/Ag nanometer wall.
The invention relates to a preparation method of an organic solar cell with adjustable incident light intensity, which comprises the following steps:
1) cleaning a base plate consisting of the transparent substrate and the transparent conductive anode, and drying by using dry nitrogen after cleaning;
2) depositing a photoluminescent layer on the non-conductive side surface of the transparent substrate in step 1), when using a photoresistWhen organic small molecules are used, a vacuum evaporation method is adopted to prepare the photoluminescent layer, and the vacuum degree is controlled to be less than 10-3Pa, when a high molecular polymer or a quantum dot material is adopted, preparing a photoluminescent layer by adopting a spin coating, printing or soaking method;
3) calcining the photoluminescent layer prepared on the transparent substrate in the step 2) at 50-200 ℃ for a set time to obtain photoluminescent layers with nanocrystals with different sizes; the thickness of the photoluminescent layer depends on the luminous intensity so as to achieve a certain number of emitted photons; calcining the photoluminescent layer on the substrate at 50-200 ℃, wherein the specific calcining time and temperature are determined according to different photoluminescent layer materials, and the photoluminescent layers of the nanocrystals with different sizes can be obtained to adjust the incident light intensity;
4) preparing a hole injection layer on the surface of the transparent conductive anode in the step 3) by adopting a rotary coating, printing, spraying or evaporation mode and adopting a hole injection layer material;
5) adopting rotary coating, printing, spraying or evaporation modes, respectively adopting an organic electron donor layer material and an organic electron acceptor layer material, preparing a donor layer on the hole injection layer prepared in the step 4), and then preparing an acceptor layer on the surface of the donor layer, or directly preparing a donor/acceptor mixed layer on the hole injection layer prepared in the step 4) to form a donor/acceptor active layer, so as to obtain a PHJ or BHJ structural device;
6) preparing an electron transport layer on the surface of the receptor layer prepared in the step 5) or the surface of the donor/receptor mixed layer by adopting a rotary coating, printing, spraying or evaporation mode and adopting an electron transport layer material;
7) replacing a mask plate, and evaporating a cathode material on the surface of the electron transport layer prepared in the step 6) to form an electrode cathode layer, so as to prepare each functional layer of the organic solar cell.
The invention adds the external photoluminescence layer to form a sensitization structure of the photoluminescence layer-the transparent substrate-the transparent anode-the hole injection layer, and the addition of the photoluminescence layer made of organic materials is beneficial to additionally increasing the number of incident photons. Visible light that can be absorbed by the donor/acceptor material is generated primarily by absorbing ultraviolet light to increase the number of photons incident on the active layer. And the design that the photoluminescent layer is arranged at the other end of the substrate ensures that the energy level and the electron hole transmission characteristic of the photoluminescent layer material are not limited and have no influence on the filling factor of the device. Compared with the traditional optical design, the method has the advantages of simple process and lower cost, and is a simple and effective method for improving the photocurrent.
Compared with the prior art, the invention has the following obvious and prominent substantive characteristics and remarkable advantages:
1. compared with the traditional device structure which needs optical design or preparation of a micro-nano structure to enhance the sunlight intensity, the device can absorb ultraviolet light to emit blue light, green light or yellow light through the external photoluminescent layer, so that the number of incident photons is additionally increased;
2. the photoluminescent layer is arranged at the non-conductive end of the substrate, both hole or electron transport materials can be used, and the energy level and the hole/electron transport characteristics are not limited;
3. the photoluminescent layers of different nanocrystals can be obtained by calcining the photoluminescent layers on the substrate, so that the spectral intensity of sunlight incident to the active layer is adjusted;
4. the device has a relatively simple structure, the thickness and the components of the photoluminescence layer can be accurately controlled, stable performance can be obtained, and the device is beneficial to mass production.
Drawings
Fig. 1 is a schematic structural diagram of an organic solar cell with adjustable incident light intensity according to various embodiments of the present invention.
Fig. 2 is a graph showing normalized absorption and emission spectra of a single film of the photoluminescent layer TPTPA according to various embodiments of the present invention.
FIG. 3 is an absorption spectrum characteristic curve of 20nmDBP and 76.5nmBAlq single films according to various embodiments of the present invention.
Fig. 4 is a normalized characteristic curve of absorption and emission spectra of a photoluminescent layer TPTPA single film, and absorption spectra of rubrene and BAlq according to various embodiments of the present invention.
Detailed Description
The preferred embodiments of the invention are detailed below:
the first embodiment is as follows:
in this embodiment, referring to fig. 1, an organic solar cell with adjustable incident light intensity is sequentially composed of a photoluminescent layer 1, a transparent substrate 2, a transparent conductive anode 3, a hole injection layer 4, a donor layer 5, an acceptor layer 6, an electron transport layer 7 and an electrode cathode layer 8, which are combined from bottom to top, wherein the donor layer 5 is made of any one or any mixture of organic solar cell materials with a set absorption range and a narrow band strong absorption, the acceptor layer 6 is made of any one or any mixture of non-fullerene and derivatives or electron transport materials with a set energy level, the photoluminescent layer 1 has a thickness of 5-20nm, the photoluminescent layer 1 is made of any one or any mixture of hole transport materials and electron transport materials with a wide band gap and capable of absorbing ultraviolet light to emit visible light, and includes any one or any plural of a quantum dot light emitting material, a fluorescent light emitting material, and a phosphorescent light emitting material.
In this embodiment, referring to fig. 1, a transparent substrate 2 and a transparent conductive anode 3 form a substrate, and by selecting materials of a photoluminescent layer 1, a photoluminescent layer material is deposited on a surface of a non-conductive side of the transparent substrate 2 on the substrate, and then the photoluminescent layer material on the substrate is calcined, so as to obtain the photoluminescent layers 1 of different nanocrystals, which are disposed at the non-conductive end of the substrate, and therefore, the energy level and the hole/electron transport characteristics are not limited, thereby adjusting the number of incident photons of an OPV device on the ITO side of the substrate, and increasing the photo-generated current of the device.
In this example, referring to fig. 1, a transparent electrode is deposited on a rigid glass with high light transmittance to form an IT0 glass substrate, a transparent IT0 glass substrate etched to form a certain mask is selected as an anode, and the substrate is sequentially cleaned with a detergent, acetone, deionized water and isopropanol by ultrasonic cleaning for 20 minutes, dried with nitrogen, and subjected to UV/O3The treatment is carried out for 15 minutes for standby. Depositing a TPTPTPA photoluminescent layer 1 on one side of the substrate glass by a vacuum evaporation method, wherein the thickness of the TPTPTPA photoluminescent layer is 20 nm; subsequently subjecting the substrate to a temperature of 100 DEG CCalcining at the temperature of 0.2-1.0 hour to obtain TPTPTPA condensed phase. Then, MoO is evaporated on the ITO side of the substrate in vacuum3A hole injection layer 4 having a thickness of 10 nm; followed by deposition of a DBP donor layer 5 with a thickness of 10-25nm and a BAlq acceptor layer 6 with a thickness of 30-50 nm; then depositing a BCP electron transport layer 7 with the thickness of 5-10 nm; and finally, replacing the mask plate to evaporate Ag cathode metal, and preparing an electrode cathode layer 8 with the thickness of 100 nm.
The organic solar cell with the adjustable incident light intensity is tested and analyzed, the anode is placed upwards during testing, and the device can be tested by simulating the incidence of sunlight from the upper side. The absorption and emission spectra of the emission layer TPTPTPTPA are shown in FIG. 2 and FIG. 4, the absorption peak is 406nm, and the emission peak is 469 nm. The absorption spectra of the donor layer DBP and the acceptor layer BAlq are shown in fig. 3, respectively. The strong absorption range of DBP is 490-660nm, and the latter half of TPTPA emission peak is just in this range. The blue light emitted from TPTPA can therefore increase the number of incident photons of the DBP.
In this embodiment, the organic solar cell based on the photoluminescence layer for adjusting the incident light intensity and the preparation method thereof are provided, wherein the donor layer is made of a conventional organic solar cell material with a narrow band system and strong absorption, and the acceptor layer is made of a non-fullerene or conventional electron transport material. The organic solar cell device is characterized in that the light-emitting layer is selected and deposited on the other side of the transparent substrate. The photoluminescence layer is excited by sunlight to emit blue light, green light or yellow light. For organic solar cells on the transparent conductive anode side, the additional added photons will enhance the incident light intensity. And the photoluminescent layer is calcined to obtain photoluminescent intensities with different intensities, so that the solar spectrum is adjusted. The device can increase the incident light intensity by a simple method without other additional light gathering plates, reflection/refraction plates and micro-nano structures, and is adjustable. The device is ultra-thin, the preparation process is simple, and the equipment requirement is low.
Example two:
this embodiment is substantially the same as the first embodiment, and is characterized in that:
in this embodiment, referring to FIG. 1, a transparent etch is selected to maskThe IT0 glass substrate of the template is used as an anode, ultrasonic cleaning is sequentially carried out for 20 minutes by using a cleaning agent, acetone, deionized water and isopropanol, nitrogen is used for drying, and UV/O is used for drying3The treatment is carried out for 15 minutes for standby. Depositing a TPTPTPA luminous layer on one glass side of the substrate by a vacuum evaporation method, wherein the thickness of the TPTPTPA luminous layer is 5-20 nm; calcining the substrate at different temperatures for a certain time to obtain a TPTPTPA condensed phase; then vacuum evaporating a hole injection layer MoO on the ITO side of the substrate3The thickness is 5-10 nm; then depositing a rubrene donor layer with the thickness of 20-60nm and a BALq acceptor layer with the thickness of 30-50 nm; then depositing an electron transport layer material Bphen with the thickness of 5-10nm to prepare an electron transport layer; and finally, replacing the mask plate to evaporate the cathode metal. The metal Al with the evaporation thickness of 100nm is used as a cathode.
The organic solar cell with the adjustable incident light intensity is tested and analyzed, the anode is placed upwards during testing, and the device can be tested by simulating the incidence of sunlight from the upper side. The absorption and emission spectra of the emission layer TPTPTPTPA are shown in FIG. 2 and FIG. 3, the absorption peak is 406nm, and the emission peak is 469 nm. The absorption spectra of the donor layer rubrene and the acceptor layer BAlq are shown in fig. 4, respectively. The strong absorption range of Rubene is 452-572nm, and the emission peak of TPTPA is just in this range. The blue light emitted by TPTPA can therefore increase the number of photons incident on rubrene.
The embodiment provides an organic solar cell for adjusting incident light intensity based on a photoluminescent layer and a preparation method thereof. The absorption of uv light by the external photoluminescent layer emits blue, green or yellow light to additionally increase the number of incident photons. The energy level and hole/electron transport characteristics of this photoluminescent layer are not limited. And the photoluminescent layer is calcined to obtain aggregation states with different nanometer sizes, so that the spectral intensity of the sunlight incident to the active layer is adjusted. The method has the characteristics of low cost, simple structure and process, capability of being prepared on a flexible substrate and the like. Can be widely applied to the aspect of solar power generation.
The embodiments of the present invention have been described with reference to the accompanying drawings, but the present invention is not limited to the above embodiments, and various changes and modifications can be made according to the purpose of the invention, and any changes, modifications, substitutions, combinations or simplifications made according to the spirit and principle of the technical solution of the present invention shall be equivalent substitutions, as long as the purpose of the present invention is met, and the organic solar cell with adjustable incident light intensity and the technical principle and inventive concept of the method for manufacturing the same shall fall within the protection scope of the present invention.

Claims (11)

1. An organic solar cell with adjustable incident light intensity is characterized in that: the organic solar cell comprises a photoluminescent layer (1), a transparent substrate (2), a transparent conductive anode (3), a hole injection layer (4), a donor layer (5), a receptor layer (6), an electron transport layer (7) and an electrode cathode layer (8) which are combined from bottom to top in sequence, wherein the donor layer (5) is made of any one or any mixture of narrow-band system strong-absorption organic solar cell materials with a set absorption range, the receptor layer (6) is made of any one or any mixture of non-fullerene and derivatives or electron transport materials with a set energy level, the photoluminescent layer (1) is 5-20nm thick, the photoluminescent layer (1) is made of any one or any mixture of various hole transport materials and electron transport materials which have wide band gaps and absorb ultraviolet light to emit visible light, or comprises any one or more of quantum dot luminescent materials, fluorescent luminescent materials and phosphorescent luminescent materials, and the external photoluminescent layer absorbs ultraviolet light to emit blue light, green light or yellow light so as to additionally increase the number of incident photons; the photoluminescent layer is arranged at the non-conductive end of the substrate, and the energy level and the hole/electron transmission characteristics are not limited; and calcining the photoluminescent layer at 50-200 ℃ for a set time to obtain the photoluminescent layers with the nanocrystals with different sizes.
2. The organic solar cell with adjustable incident light intensity according to claim 1, wherein: the thickness of the substrate consisting of the transparent substrate (2) and the transparent conductive anode (3) is 100-150nm, the thickness of the hole injection layer (4) is 5-10nm, the thickness of the donor layer (5) is 10-60nm, the thickness of the acceptor layer (6) is 30-50nm, the thickness of the electron transport layer (7) is 5-10nm, and the thickness of the electrode cathode layer (8) is 80-100 nm.
3. The organic solar cell with adjustable incident light intensity according to claim 1 or 2, wherein: the material component of the photoluminescent layer (1) is a hole transport material selected from the group consisting of 5,10,15-tribenzyl-5H-diindolo [3,2-a: any one or several of 3 ', 2' -c ] -carbozole (tbdi), N '-diphenyl-N, N' -bis (1-naphthol) -1,1 '-diphenyl-4, 4' -diamine (α -NPD), N '-diphenyl-N, N' -bis (1-naphthol) -1,1 '-diphenyl-4, 4' -diamine (npb), 4 '-bis-9-carbozylbiphenyl (cbp), tpa [4- (5-phenylthiophen-2-yl) phenyl ] amine (tpp), 4' -bis [ (N-carbozole) phenyl ] biphenyl (BSB-Cz); as the material composition of the photoluminescent layer (1), the electron transport material is any one or more of tetrafluorocyano dimethyl methane (F4-TCNQ), naphthalene1,4,5, 8-dihydroxy (ntcda), naphthalene tetracarboxylic diimide (ntcdi), phenyl phenolato) aluminum (iii) (balq), tris (8-hydroxyquinolato) aluminum (Alq3), bis [2- (diphenylphosphino) phenyl ] ether (dpepo); as the material component of the photoluminescence layer (1), the quantum dot material is any one or more of ZnO, ZnS, CdS, CdSe and CdTe.
4. The organic solar cell with adjustable incident light intensity according to claim 1 or 2, wherein: the transparent substrate (2) is made of any one or more of rigid glass materials, transparent polymer flexible materials or biodegradable flexible materials, wherein the transparent polymer flexible materials are any one or more of polyethylene, polymethyl methacrylate, polycarbonate, polyurethane, polyimide resin and polyacrylic acid.
5. The organic solar cell with adjustable incident light intensity according to claim 1 or 2, wherein: the transparent conductive anode (3) is made of any one or more of Indium Tin Oxide (ITO), conductive polymer poly (3,4-ethylenedioxythiophene), poly (phenylenesulfonate) (PEDOT: PSS), graphene (graphene), carbon nano tubes (carbon nano tubes), metal simple substances, metal simple substance nano wires, metal alloy nano wires and metal heterojunction nano wires.
6. The organic solar cell with adjustable incident light intensity according to claim 1 or 2, wherein: the hole injection layer (4) is made of the following materials: MoO3, V2O5, NiO2, WO3, 5,10,15-tribenzyl-5H-diindolo [3,2-a:3 ', 2' -c ] -carbamate (TBDI), N '-diphenyl-N, N' -bis (1-naphthol) -1,1 '-diphenyl-4, 4' -diamine (alpha-NPD), N '-diphenyl-N, N' -bis (1-naphthol) -1,1 '-diphenyl-4, 4' -diamine (NPB), 4 '-bis-9-Carbozylbiphenyl (CBP), 4' -bis [ (N-carbamate) styryl ] biphenyl (BSB-Cz).
7. The organic solar cell with adjustable incident light intensity according to claim 1 or 2, wherein: the material of the donor layer (5) is any one or more of blue-green, yellow and red visible light-absorbing fluorescent materials and red phosphorescent materials, wherein the fluorescent materials mainly absorbing blue-green, yellow and red visible light are boronesuchocyaninechlearchloride (SubPc), copperphthalocyanine (CuPc), chloroallylocyanine (ClAlPc), lithocyanine (ZnPc), titanylphocyanine (TiOPc), platinum (II), phthalocyanine (PtPc), methylacryanine (H2Pc), phenaphthalocyanine (Pc), Pentacene, tetracene, anthracenene (DB6332-7), phthalocyanine (DBP) -2-4-tolylene (DB20-3-tolyltriazole), phthalocyanine (DB20-1-3-tolyltriazole), phthalocyanine (DB7-3-tolyltriazole (DB7-3-4-tolyltriazole), and polytetramethylene-2-tolylene (DB20-3-tolyltriazole) (DB7-3, 3-tolyltriazole: (DB7-4-tolylene), and PBT-tolylene) (DB7-3-tolylene, DBP), and DBP, wherein, Any one or more of Poly (p, p' -biphenol) (PBP), Poly (2,5-thienylenevinylene) (PTV); wherein the red light phosphor material is any one or more of bis [2- (2 '-benzothiazolyl) pyridine-N, C3' ] (aeetylaeetonate) iridium (Btp2Ir (acac) and tris [1-phenylisoquinolinato-C2, N ] iridium (III) (Ir (piq) 3).
8. The organic solar cell with adjustable incident light intensity according to claim 1 or 2, wherein: the non-fullerene material is 3,4,9, 10-phenylene tetracarboxylic nitrile (PTCBI), 3,4,9, 10-phenylene tetracarboxylic diimide (PTCDI), 3,4,9, 10-phenylene tetracarboxylic diimide (PTCDA), poly (9, 9-dimethylfluorene-co-phenylene tetracarboxylic dianhydride (F8BT), copperphenylene fluorocarbon (F16CuPc), benzocyclobutene (F16ZnPc), iron (II) heptafluoropropane (F16) or tetrachlornaphthalene chloride (F6, 16-naphthalene chloride) (F6, 7-naphthalene chloride) (F6-7) as the material component of the receptor layer (6), the electron level of any of the fluorocarbon, (F6-7) or the electron level of any of the materials (C, 7-naphthalene chloride) (C), ethylene chloride (F16-ethylene chloride) (F6, 5-ethylene chloride) (C), ethylene chloride (C) (C-ethylene chloride) (F6-ethylene chloride) (P), ethylene chloride (C) (P5-ethylene chloride) (P) (C), ethylene chloride (P) (C), ethylene chloride (C) (P, Any one or more of bis [2- (diphenylphosphino) phenyl ] ether oxide (DPEPO).
9. The organic solar cell with adjustable incident light intensity according to claim 1 or 2, wherein: the material of the electron transmission layer (7) is any one or more of graphene, carbon nano tube, ZnO, Cs2CO3, 2' - (1,3, 5-benzinetryl) -tris (1-phenyl-1-H-benzimidazole) (TPBi), Bathocropine (BCP), Lithiumfluoride (LiF), quinoxaline compounds, polymers containing cyano groups, other nitrogen-containing heterocyclic compounds, organosilicon materials, perfluorinated materials and organic boron materials.
10. The organic solar cell with adjustable incident light intensity according to claim 1 or 2, wherein: the electrode cathode layer (8) is made of any one or more of Au, Al, Ag, magnesium-silver alloy, lithium-aluminum alloy or 3D printed Au/Ag nanometer walls.
11. The method for preparing the organic solar cell with adjustable incident light intensity according to claim 1, which comprises the following steps:
1) cleaning a base plate consisting of the transparent substrate and the transparent conductive anode, and drying by using dry nitrogen after cleaning;
2) depositing a photoluminescent layer on the surface of the non-conductive side of the transparent substrate in the step 1), preparing the photoluminescent layer by vacuum evaporation when organic micromolecules are adopted, and controlling the vacuum degree to be less than 10-3Pa, when a high molecular polymer or a quantum dot material is adopted, preparing a photoluminescent layer by adopting a spin coating, printing or soaking method;
3) calcining the photoluminescent layer prepared on the transparent substrate in the step 2) at 50-200 ℃ for a set time to obtain photoluminescent layers with nanocrystals of different sizes, wherein the external photoluminescent layer absorbs ultraviolet light to emit blue light, green light or yellow light so as to additionally increase the number of incident photons; the photoluminescent layer is arranged at the non-conductive end of the substrate, and the energy level and the hole/electron transmission characteristics are not limited;
4) preparing a hole injection layer on the surface of the transparent conductive anode in the step 3) by adopting a rotary coating, printing, spraying or evaporation mode and adopting a hole injection layer material;
5) preparing a donor layer on the hole injection layer prepared in the step 4) by adopting a rotary coating, printing, spraying or evaporation mode and respectively adopting an organic electron donor layer material and an organic electron acceptor layer material, and then preparing an acceptor layer on the surface of the donor layer, or directly preparing a donor/acceptor mixed layer on the hole injection layer prepared in the step 4);
6) preparing an electron transport layer on the surface of the receptor layer prepared in the step 5) or the surface of the donor/receptor mixed layer by adopting a rotary coating, printing, spraying or evaporation mode and adopting an electron transport layer material;
7) replacing a mask plate, and evaporating a cathode material on the surface of the electron transport layer prepared in the step 6) to form an electrode cathode layer, so as to prepare each functional layer of the organic solar cell.
CN201610185708.8A 2016-03-29 2016-03-29 Organic solar cell with adjustable incident light intensity and preparation method thereof Active CN106410031B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610185708.8A CN106410031B (en) 2016-03-29 2016-03-29 Organic solar cell with adjustable incident light intensity and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201610185708.8A CN106410031B (en) 2016-03-29 2016-03-29 Organic solar cell with adjustable incident light intensity and preparation method thereof

Publications (2)

Publication Number Publication Date
CN106410031A CN106410031A (en) 2017-02-15
CN106410031B true CN106410031B (en) 2020-01-17

Family

ID=58007157

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201610185708.8A Active CN106410031B (en) 2016-03-29 2016-03-29 Organic solar cell with adjustable incident light intensity and preparation method thereof

Country Status (1)

Country Link
CN (1) CN106410031B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107946412B (en) * 2017-12-25 2020-08-04 青岛大学 Preparation method of rare earth complex solution and modified solar cell
CN111799379A (en) * 2020-07-17 2020-10-20 华南师范大学 Solar cell containing organic silicon quantum dot material and preparation method thereof
CN116709797A (en) * 2023-06-17 2023-09-05 陕西科技大学 Deep red-near infrared light emitting diode and preparation method thereof

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1325142A (en) * 2000-05-18 2001-12-05 陈兴 Method of increasing generated power of solar cell
CN101257053A (en) * 2008-04-15 2008-09-03 罗维鸿 Solar cell and its luminous converting layer
CN101787271A (en) * 2009-01-23 2010-07-28 E.I.内穆尔杜邦公司 Quantum dot optical wavelength converting layer for solar cell
CN102097505A (en) * 2009-12-03 2011-06-15 杜邦太阳能有限公司 Solar cell with luminescent member
CN102446987A (en) * 2010-09-30 2012-05-09 通用电气公司 Photovoltaic devices
CN202651175U (en) * 2012-05-10 2013-01-02 河南安彩高科股份有限公司 Solar cell with high photoelectric conversion efficiency
CN103887434A (en) * 2014-03-28 2014-06-25 宁波大学 Method for processing optical active layer of polymer solar cell and polymer solar cell manufacturing method

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103378182A (en) * 2012-04-25 2013-10-30 新日光能源科技股份有限公司 Light wave conversion layer and solar cell with same

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1325142A (en) * 2000-05-18 2001-12-05 陈兴 Method of increasing generated power of solar cell
CN101257053A (en) * 2008-04-15 2008-09-03 罗维鸿 Solar cell and its luminous converting layer
CN101787271A (en) * 2009-01-23 2010-07-28 E.I.内穆尔杜邦公司 Quantum dot optical wavelength converting layer for solar cell
CN102097505A (en) * 2009-12-03 2011-06-15 杜邦太阳能有限公司 Solar cell with luminescent member
CN102446987A (en) * 2010-09-30 2012-05-09 通用电气公司 Photovoltaic devices
CN202651175U (en) * 2012-05-10 2013-01-02 河南安彩高科股份有限公司 Solar cell with high photoelectric conversion efficiency
CN103887434A (en) * 2014-03-28 2014-06-25 宁波大学 Method for processing optical active layer of polymer solar cell and polymer solar cell manufacturing method

Also Published As

Publication number Publication date
CN106410031A (en) 2017-02-15

Similar Documents

Publication Publication Date Title
Sun et al. Interface design for high-efficiency non-fullerene polymer solar cells
Rand et al. Solar cells utilizing small molecular weight organic semiconductors
DK2513995T3 (en) PHOTOACTIVE COMPONENT WITH ORGANIC LAYERS
Myers et al. Organic semiconductors and their applications in photovoltaic devices
KR101730934B1 (en) Heterocyclic compounds and the use thereof in electronic and optoelectronic components
US9040817B2 (en) Organic thin film solar cell
KR101587895B1 (en) Inverted organic electronic device and method for manufacturing the same
KR20180093991A (en) Perovskite optoelectronic device, manufacturing method and perovskite material
CN102110736B (en) Colloid quantum dot-based infrared photoelectric detector and manufacturing method thereof
US20120299045A1 (en) Organic electroluminescent device with integrated layer for colour conversion
Vasilopoulou et al. Large work function shift of organic semiconductors inducing enhanced interfacial electron transfer in organic optoelectronics enabled by porphyrin aggregated nanostructures
US9431621B2 (en) Metal oxide charge transport material doped with organic molecules
CA2562939A1 (en) High efficiency organic photovoltaic cells employing hybridized mixed-planar heterojunctions
CN105655491B (en) The organic solar batteries and preparation method thereof of integral type hole transmission layer with exciton blocking and sunlight enhanced sensitivity
Jiang et al. Highly efficient, solution processed electrofluorescent small molecule white organic light-emitting diodes with a hybrid electron injection layer
CN105118921A (en) Organic photoelectric detector with high external quantum efficiency and broad spectral response and preparation method thereof
CN106410031B (en) Organic solar cell with adjustable incident light intensity and preparation method thereof
Kwon et al. Naphtho [2, 3, a] pyrene as an efficient multifunctional organic semiconductor for organic solar cells, organic light-emitting diodes, and organic thin-film transistors
Sworakowski et al. 4 Electrical properties of organic materials
JP2019068083A (en) Hybrid flat surface mixture hetero junction for organic photovoltaic device
CN101710610A (en) Organic light emitting diode of alkali metal carbonate-doped organic electron injecting layer
CN101504971A (en) Organic opto-electric device based on bi-polar organic material and production process thereof
KR20100045438A (en) Use of n,n'-bis(1,1-dihydroperfluoro-c3-c5-alkyl)perylene-3,4:9,10-tetracarboxylic diimides
Halls et al. Organic photovoltaic devices
KR20150120330A (en) Polymer photovoltaics employing a squaraine donor additive

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant