CN113838796A - Preparation method of local oxide layer and preparation method of semiconductor device - Google Patents
Preparation method of local oxide layer and preparation method of semiconductor device Download PDFInfo
- Publication number
- CN113838796A CN113838796A CN202111417865.4A CN202111417865A CN113838796A CN 113838796 A CN113838796 A CN 113838796A CN 202111417865 A CN202111417865 A CN 202111417865A CN 113838796 A CN113838796 A CN 113838796A
- Authority
- CN
- China
- Prior art keywords
- opening
- oxide layer
- layer
- beak
- bird
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76205—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region
Abstract
The invention provides a preparation method of a local oxide layer and a preparation method of a semiconductor device. In the preparation method of the local oxide layer, a region where the local oxide layer needs to be formed is defined by the first opening and the second opening, and the second opening is internally provided with the oxynitride layer to control the oxygen diffusion rate, so that a large amount of oxygen is prevented from being laterally diffused to the bird's beak region through the second opening, meanwhile, a buffer region for laterally diffusing oxygen is formed by the distance between the first opening and the second opening, the content of oxygen laterally diffused to the bird's beak region through the first opening is greatly reduced, and the size of the finally formed bird's beak is reduced.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a preparation method of a local oxide layer and a preparation method of a semiconductor device.
Background
Local Oxidation of Silicon (LOCOS) is a commonly used structure in modern semiconductor device manufacturing processes. The LOCOS structure has a local oxide layer with a larger thickness, so that a good isolation effect can be achieved, and the LOCOS structure can be applied to a high-voltage device process.
At present, a method for preparing a local oxide layer in a LOCOS structure can be referred to fig. 1-2, for example, and includes: referring to fig. 1, a pad oxide layer 20 and a nitride layer 30 are sequentially formed on a substrate 10, and the nitride layer 30 and the pad oxide layer 20 are sequentially etched to form an opening 40a, where the opening 40a is used to define a region of a local oxide layer to be formed later; referring next to fig. 2, an oxidation process is performed to form a local oxide layer 40 in the opening 40 a.
During the oxidation process to form the local oxide layer 40, a portion of oxygen atoms provided in the oxidation process diffuses into the substrate 10 along the longitudinal direction, and another portion diffuses laterally, so that there is an oxidation growth under the nitride layer 30 to raise the edge of the nitride layer 30 to form a bird's beak 41 (as shown in fig. 2), which is called "bird's beak effect", and the presence of the bird's beak 41 increases the area occupied by the local oxide layer 40. In particular, as the integration density of integrated circuits is increased, the size of devices and the length of channels are further reduced, and the presence of bird's beak 41 in local oxide layer 40 will seriously affect the miniaturization of devices.
In the prior art, the improvement method for the bird's beak effect generally comprises the following steps: reducing the thickness of the pad oxide layer 20; alternatively, the local oxide layer 40 itself is reduced in thickness. However, reducing the thickness of the pad oxide layer 20 will make it difficult to effectively relieve the stress on the substrate 10 from the nitride layer 30, and reducing the thickness of the local oxide layer 40 itself will affect the isolation effect on the device.
Disclosure of Invention
The invention aims to provide a preparation method of a local oxide layer, which aims to solve the problem that the bird's beak size of the local oxide layer formed by the existing preparation method is difficult to further reduce.
In order to solve the above technical problem, the present invention provides a method for preparing a local oxide layer, including: providing a substrate, and forming a stacked structure at least comprising a pad oxide layer and a nitride layer on the substrate;
forming a first opening and a second opening in the stacked structure, the second opening being located at a side of the first opening, wherein the first opening penetrates through the nitride layer and the pad oxide layer to expose the substrate, the second opening penetrates through the nitride layer, and an oxynitride layer is further provided in the second opening, the oxynitride layer covering the pad oxide layer; and the number of the first and second groups,
and performing an oxidation process to form a local oxide layer, wherein a bird's beak is formed at the end part of the local oxide layer, and the bird's beak is positioned at one side of the second opening, which faces away from the first opening.
Optionally, an oxynitride layer is further formed between the pad oxide layer and the nitride layer, and the second opening penetrates through the nitride layer to the oxynitride layer to expose the oxynitride layer.
Optionally, a thickness of the layer of oxynitride within the second opening is 50 a-80 a.
Optionally, the size of the second opening is smaller than the size of the first opening.
Optionally, the first opening and the second opening are formed simultaneously in the same etching process by using a loading effect of etching.
Optionally, the opening size of the first opening is 5-8 times the opening size of the second opening.
Optionally, an opening size of the second opening is less than 100 nm.
Optionally, a size of a space between the first opening and the second opening is smaller than a size of a bird's beak in the local oxide layer.
Optionally, a size of a space between the first opening and the second opening is less than or equal to 100 nm.
The present invention also provides a method for manufacturing a semiconductor device, which forms a local oxide layer using the above-described manufacturing method, based on the above-described method for manufacturing a local oxide layer, and can not only ensure the performance of the formed local oxide layer, but also facilitate further reduction in the device size.
In the method for preparing the local oxide layer, the first opening and the second opening are used for defining the region which needs to be oxidized on the substrate to form the local oxide layer, wherein the second opening is positioned at the side edge of the first opening, and the second opening is internally provided with the oxynitride layer, so that the oxynitride layer can be used for blocking oxygen to a certain degree, the diffusion rate of the oxygen into the substrate can be effectively controlled, and a large amount of oxygen is prevented from being laterally diffused to the bird's beak region outside the second opening through the second opening. Meanwhile, the spacing distance between the first opening and the second opening is equivalent to a buffer area for oxygen lateral diffusion, so that oxygen laterally diffused through the first opening needs to pass through the back of the buffer area and can be further laterally diffused to a beak area outside the first opening, the oxygen content diffused to the beak area is greatly reduced, and the size of the finally formed beak is reduced. Therefore, the preparation method provided by the invention can realize effective reduction of the bird's beak size of the formed local oxide layer without reducing the thickness of the pad oxide layer and the thickness of the local oxide layer, and ensure the performance of the local oxide layer.
Drawings
Fig. 1-2 are schematic structural views of a conventional method for preparing a local oxide layer during a preparation process thereof.
Fig. 3 is a flow chart illustrating a method for forming a local oxide layer according to an embodiment of the invention.
Fig. 4-7 are schematic structural diagrams of a method for forming a local oxide layer according to an embodiment of the present invention during a process of forming the local oxide layer.
Wherein the reference numbers are as follows: 10-a substrate; 20-pad oxide layer; a 30-nitride layer; 40 a-opening; 40-a local oxide layer; 41-beak; 100-a substrate; 200-pad oxide layer; 300-a nitrogen oxide layer; 400-a nitride layer; 500 a-first opening; 500 b-a second opening; 500-a local oxide layer; 510-beak.
Detailed Description
As mentioned in the background, the prior art improvements to reduce the size of the bird's beak in the face of the bird's beak effect in the local oxide layer also cause other problems (e.g., affecting the performance of the local oxide layer itself), so that the current optimization approaches still have limitations.
To this end, the present invention provides a method for producing a local oxide layer, as can be seen, for example, in fig. 3, comprising the following steps.
Step S100, a substrate is provided, and a stacked structure including at least a pad oxide layer and a nitride layer is formed on the substrate.
Step S200, forming a first opening and a second opening in the stacked structure, wherein the second opening is positioned on the side of the first opening; the first opening penetrates through the nitride layer and the pad oxide layer in sequence to expose the substrate, the second opening penetrates through the nitride layer, an oxynitride layer is further arranged in the second opening, and the oxynitride layer covers the pad oxide layer.
According to the preparation method of the local oxide layer, provided by the invention, under the condition that the thickness of the local oxide layer is not reduced, the content of oxygen transversely diffused to the bird's beak region from the second opening can be effectively relieved by utilizing the oxynitride layer in the second opening positioned on the side of the first opening, and the distance of oxygen transversely diffused to the bird's beak region from the first opening is prolonged due to the certain area between the first opening and the second opening, so that the purpose of reducing the size of the formed bird's beak is achieved.
The partial oxide layer and the method for fabricating the same according to the present invention are further described in detail with reference to fig. 3, fig. 4-fig. 7 and the specific embodiment, wherein fig. 4-fig. 7 are schematic structural diagrams of the partial oxide layer in the fabrication process according to an embodiment of the present invention. The advantages and features of the present invention will become more apparent from the following description. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is provided solely for the purpose of facilitating and distinctly claiming the embodiments of the present invention. And relative terms such as "above," "below," "top," "bottom," "above," and "below" as may be used in the figures, may be used to describe various elements' relationships to each other. These relative terms are intended to encompass different orientations of the elements in addition to the orientation depicted in the figures. For example, if the device were inverted relative to the view in the drawings, an element described as "above" another element, for example, would now be below that element.
In step S100, referring specifically to fig. 4, a substrate 100 is provided, and a stacked structure including at least a pad oxide layer 200 and a nitride layer 400 is formed on the substrate 100.
The substrate 100 is, for example, a silicon substrate. The pad oxide layer 200 may be specifically a silicon oxide layer, which may be used to relieve stress between the nitride layer 400 and the substrate 100. In this embodiment, the thickness of the pad oxide layer 200 may be set to be not less than 90 a to satisfy a stress relief effect between the nitride layer 400 and the substrate 100, in a specific example, the thickness of the pad oxide layer 200 may be further set to be 100 a-150 a, where the thickness of the pad oxide layer 200 may be further selected to be 110 a. And, the nitride layer 400 may be embodied as a silicon nitride layer, which may be used to block oxygen atoms in a subsequent oxidation process. Wherein the thickness of the nitride layer 400 is, for example, 250A-500A, and in particular examples the thickness of the nitride layer 400 may be set to be 300A, 350A, and the like.
With continued reference to fig. 4, in the present embodiment, an oxynitride layer 300 is additionally disposed between the pad oxide layer 200 and the nitride layer 400. The pad oxide layer 300 is for at least partially remaining within a subsequently formed second opening, which will be described in detail in a subsequent step.
It should be noted that the properties of the oxynitride layer 300 are generally between those of the nitride layer 400 and the pad oxide layer 200, for example, the nitride layer 400 can better block oxygen atoms, the pad oxide layer 200 can allow oxygen atoms to diffuse, and the oxynitride layer 300 has a higher oxygen atom blocking capability than the pad oxide layer 200 and a lower oxygen atom blocking capability than the nitride layer 400, so that oxygen atoms can diffuse into the substrate 100 through the oxynitride layer 300 in a subsequent oxidation process, while the diffusion rate of oxygen atoms through the oxynitride layer 300 can be controlled within a certain range. Wherein the thickness of the oxynitride layer 300 can be adjusted correspondingly according to actual conditions, and in this embodiment, the thickness of the oxynitride layer 300 can be set to be 50 a-100 a.
In step S200, referring to fig. 5 in particular, a first opening 500a and a second opening 500b are formed in the stacked structure, the second opening 500b is located at a side of the first opening 500a, and an oxynitride layer 300 is further provided in the second opening 500b, and the oxynitride layer 300 covers the pad oxide layer 200.
In this embodiment, the oxynitride layer 300 is formed between the pad oxide layer 200 and the nitride layer 400, so that the first opening 500a sequentially penetrates through the nitride layer 400, the oxynitride layer 300 and the pad oxide layer 200 to expose the substrate 100, and oxygen provided in a subsequent oxidation process can directly oxidize the exposed substrate 100 through the first opening 500 a. And, the second opening 500b penetrates the nitride layer 400 to the oxynitride layer 300 to expose the oxynitride layer 300. That is, the bottom of the second opening 500b is still covered with the oxynitride layer 300, so that the diffusion rate of oxygen from the second opening 500b can be controlled in the subsequent oxidation process, and the formation of large-sized bird's beak due to the diffusion of a large amount of oxygen can be avoided, which will be described in detail in the subsequent steps.
Specifically, the first opening 500a may be used to define an intermediate region of a local oxide layer to be formed later, and since the first opening 500a completely exposes the substrate surface, a thicker portion of the local oxide layer may be formed. The second opening 500b is located at a side of the first opening 500a, and the nitride layer is removed in the area of the second opening 500b to expose the oxynitride layer 300, thereby allowing oxygen to diffuse into the substrate, so that an oxide layer with a larger thickness can be formed on the substrate under the first opening 500a, and further, the substrate between the first opening 500a and the second opening 500b can be oxidized to a larger extent to form an oxide layer with a larger thickness based on the lateral diffusion of oxygen. Therefore, the substrate region surrounded by the second opening 500b can form an oxide layer with a larger thickness in the subsequent process, and the oxide layer with the larger thickness forms a thick layer part of the local oxide layer; and a substrate region corresponding to a direction from the second opening 500b to a direction away from the first opening 500a, wherein a bird's beak with a gradually reduced thickness is formed in a subsequent oxidation process, it can be considered that a boundary of the second opening 500b away from the first opening 500a defines a starting position of the bird's beak.
Based on this, the position of the second opening 500b can be adjusted according to the size of the local oxide layer to be formed, and specifically, the position of the second opening 500b can be set at the end of the thick layer portion of the local oxide layer to be formed. In this embodiment, the size of the second opening 500b may be smaller than that of the first opening 500a, so that the first opening 500a can expose a larger range of the substrate 100, and the thickness and size of the middle region of the subsequently formed local oxide layer can be ensured.
In a further aspect, the first opening 500a and the second opening 500b may be formed simultaneously by using a loading effect of etching. Specifically, by adjusting the size of the first opening 500a to be much larger than the size of the second opening 500b, in the same etching process, the etching rate of the film layer in the first opening 500a is greater than the etching rate of the film layer in the second opening 500b, so that after the stacked structure in the first opening 500a is completely consumed, the oxynitride layer 300 in the second opening 500b is not completely consumed and remains. In an exemplary embodiment, the opening dimension CD1 of the first opening 500a is, for example, 5-8 times the opening dimension CD2 of the second opening 500b, e.g., the opening dimension CD1 of the first opening 500a is greater than or equal to 400nm (i.e., CD1 ≧ 400 nm), and the opening dimension CD2 of the second opening 500b is less than or equal to 100nm (i.e., CD2 ≦ 100 nm).
Of course, in other schemes, the first opening 500a and the second opening 500b may be formed by different etching steps, as long as the bottom of the formed second opening 500b still has the oxynitride layer.
Wherein the oxynitride layer 300 exposed in the second opening 500b may be partially removed and the pad oxide layer 200 is covered with another portion of the oxynitride layer that remains, the oxynitride layer remaining in the second opening 500b having a thickness of, for example, 50 a-80 a. In a specific application, the diffusion rate of oxygen through the second opening 500b can be correspondingly controlled by adjusting the thickness of the oxynitride layer remaining in the second opening 500 b.
In addition, the size of the space between the first opening 500a and the second opening 500b may be adjusted based on actual conditions, so that the substrate portion between the first opening 500a and the second opening 500b can obtain enough oxygen to form an oxide layer with a sufficient thickness. In a specific example, a spacing dimension between the first opening 500a and the second opening 500b (for example, as shown in fig. 5, the spacing dimension between the first opening 500a and the second opening 500b is a spacing dimension CD3 between two boundaries where the first opening 500a and the second opening 500b are close to each other) may be set smaller than a dimension of the simulated bird's beak, for example, a spacing dimension CD3 between the first opening 500a and the second opening 500b may be set to be less than or equal to 100 nm.
And, the distance between the first opening 500a and the second opening 500b further constitutes a buffer region for oxygen diffusion, so that the oxygen laterally diffused through the first opening 500a can further diffuse to the outside of the second opening 500b after passing through the distance between the first opening 500a and the second opening 500 b. Therefore, by adjusting the size between the first opening 500a and the second opening 500b, which is equivalent to adjusting the distance of the oxygen diffusion buffer region, it is beneficial to control the oxygen content diffused to the outside of the second opening 500b, and thus beneficial to realizing the size reduction of the formed bird's beak.
In step S300, referring to fig. 6 in particular, an oxidation process is performed to form a local oxide layer 500, wherein a bird 'S beak 510 is formed at an end of the local oxide layer 500, and the bird' S beak 510 is located at a side of the second opening 500b facing away from the first opening 500 a. The oxidation process may be specifically a thermal oxidation process, and may be performed in a furnace tube apparatus, for example.
In the process of performing the oxidation process, a portion of oxygen diffuses into the substrate 100 through the first opening 500a to be oxidized to form an oxide layer, a portion of oxygen diffuses from the oxynitride layer 300 and the pad oxide layer 200 through the second opening 500b to enter the substrate to be oxidized to form an oxide layer, and a portion of oxygen diffuses laterally into the substrate covered by the nitride layer 400 through the bottoms of the first opening 500a and the second opening 500b to be oxidized to the substrate. Specifically, oxygen laterally diffused through the first and second openings 500a and 500b may be diffused to a region of the substrate between the first and second openings 500a and 500b to oxidize the region to form an oxide layer, thereby enabling formation of a sufficient thickness of the oxide layer on the substrate between the first and second openings 500a and 500 b; and, the oxygen laterally diffused through the second opening 500b can also diffuse to the outside of the second opening 500b in the direction away from the first opening 500a, thereby forming the bird's beak 510 on the substrate outside the second opening 500b, however, since the bottom of the second opening 500b is covered with the oxynitride layer 300, the oxygen can be blocked to some extent, the diffusion of oxygen can be effectively controlled, the diffusion of a large amount of oxygen to the bird's beak region can be avoided, and the size of the bird's beak 510 formed can be effectively controlled; meanwhile, the oxygen laterally diffused through the bottom of the first opening 500a needs to pass through the region from the first opening 500a to the second opening 500b to further diffuse to the outside of the second opening 500b, so the oxygen content laterally diffused through the bottom of the first opening 500a to the bird's beak region is limited, and the size of the bird's beak 510 can be further reduced.
In a further embodiment, as shown in fig. 7, the preparation method further includes: and removing the nitride layer, the oxynitride layer and the pad oxide layer.
It should be noted that, as in the above embodiment, the oxynitride layer 300 is preferentially formed between the pad oxide layer 200 and the nitride layer 400, and then when the second opening 500b is opened, a portion of the oxynitride layer in the second opening 500b is left to cover the underlying pad oxide layer 200.
However, in other embodiments, the oxynitride layer may be formed after the second opening is formed, and the preparation process includes: firstly, sequentially forming a pad oxide layer and a nitride layer on a substrate; then, forming a first opening and a second opening, wherein the first opening still exposes the substrate, the bottom of the second opening stops on the pad oxide layer to expose the pad oxide layer, and the first opening and the second opening can be simultaneously formed in the same etching process by using the load effect of etching; then, an oxynitride layer is formed in the second opening to cover the pad oxide layer (specifically, after depositing the oxynitride layer, an etching process is used to remove at least the oxynitride layer covering the first opening, and the oxynitride layer in the second opening is retained, so that the remaining oxynitride layer covers the pad oxide layer).
Further, the present embodiment also provides a manufacturing method of a semiconductor device, based on the manufacturing method of a local oxide layer as described above, including forming a local oxide layer, which may constitute, for example, a field oxide layer or the like, using the manufacturing method as described above.
In a specific embodiment, the local oxide layer may surround the periphery of the device region. Based on this, when the local oxide layer is prepared, the first opening 500a may be made to be an annular opening, and the second openings 500b may be provided at both sides of the first opening 500a facing the inner ring and the outer ring. That is, the first opening 500a and the second openings 500b located at both sides thereof are arranged, for example, in concentric rings to surround the device region.
In summary, the method for preparing the local oxide layer according to the above embodiments can effectively alleviate the oxygen content laterally diffused from the second opening to the bird's beak region by using the oxynitride layer in the second opening without reducing the thickness of the pad oxide layer and the thickness of the local oxide layer itself, and lengthen the distance of the oxygen laterally diffused from the first opening to the bird's beak region based on the buffer region between the first opening and the second opening, thereby achieving the purpose of reducing the size of the formed bird's beak. Therefore, the preparation method provided by the above embodiment can realize that the formed local oxide layer has a sufficient thickness to satisfy the isolation performance thereof, and simultaneously, the bird's beak size of the formed local oxide layer is effectively reduced. In one specific example, the bird's beak size of the partial oxide layer formed using the preparation method in the present embodiment can be reduced by about 16.7% as compared to the partial oxide layer formed using the conventional method. When the semiconductor device is applied to a semiconductor device, the isolation effect and the like of the semiconductor device can be ensured, and the size of the semiconductor device can be further reduced.
It should be noted that, although the present invention has been described with reference to the preferred embodiments, the present invention is not limited to the embodiments. It will be apparent to those skilled in the art from this disclosure that many changes and modifications can be made, or equivalents modified, in the embodiments of the invention without departing from the scope of the invention. Therefore, any simple modification, equivalent change and modification made to the above embodiments according to the technical essence of the present invention are still within the protection scope of the technical solution of the present invention, unless the content of the technical solution of the present invention is departed from.
It is also to be understood that the terminology used herein is for the purpose of describing particular embodiments only, and is not intended to limit the scope of the present invention. It must be noted that, as used herein and in the appended claims, the singular forms "a," "an," and "the" include plural referents unless the context clearly dictates otherwise. For example, reference to "a step" or "an apparatus" means a reference to one or more steps or apparatuses and may include sub-steps as well as sub-apparatuses. All conjunctions used should be understood in the broadest sense. And, the word "or" should be understood to have the definition of a logical "or" rather than the definition of a logical "exclusive or" unless the context clearly dictates otherwise. Further, implementation of the methods and/or apparatus of embodiments of the present invention may include performing the selected task manually, automatically, or in combination.
Claims (10)
1. A method of forming a localized oxide layer, comprising:
providing a substrate, and forming a stacked structure at least comprising a pad oxide layer and a nitride layer on the substrate;
forming a first opening and a second opening in the stacked structure, the second opening being located at a side of the first opening, wherein the first opening penetrates through the nitride layer and the pad oxide layer to expose the substrate, the second opening penetrates through the nitride layer, and an oxynitride layer is further provided in the second opening, the oxynitride layer covering the pad oxide layer; and the number of the first and second groups,
and performing an oxidation process to form a local oxide layer, wherein a bird's beak is formed at the end part of the local oxide layer, and the bird's beak is positioned at one side of the second opening, which faces away from the first opening.
2. The method of claim 1, wherein an oxynitride layer is further formed between the pad oxide layer and the nitride layer, and wherein the second opening extends through the nitride layer to the oxynitride layer to expose the oxynitride layer.
3. The method of preparing the local oxide layer of claim 1, wherein a thickness of the oxynitride layer within the second opening is 50 a-80 a.
4. The method of forming a localized oxide layer of claim 1 wherein the second opening is smaller in size than the first opening.
5. The method of claim 4, wherein the first opening and the second opening are formed simultaneously in a same etching process by using a loading effect of etching.
6. The method of preparing the partial oxide layer of claim 4, wherein an opening size of the first opening is 5 to 8 times an opening size of the second opening.
7. The method of forming a local oxide layer according to claim 1, wherein the second opening has an opening size of less than 100 nm.
8. The method of forming a local oxide layer according to claim 1, wherein a size of a space between the first opening and the second opening is smaller than a size of a bird's beak in the local oxide layer.
9. The method of forming a partial oxide layer according to claim 8, wherein a dimension of a space between the first opening and the second opening is 100nm or less.
10. A method for manufacturing a semiconductor device, comprising the method for manufacturing a partial oxide layer according to any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111417865.4A CN113838796B (en) | 2021-11-26 | 2021-11-26 | Preparation method of local oxide layer and preparation method of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111417865.4A CN113838796B (en) | 2021-11-26 | 2021-11-26 | Preparation method of local oxide layer and preparation method of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113838796A true CN113838796A (en) | 2021-12-24 |
| CN113838796B CN113838796B (en) | 2022-03-04 |
Family
ID=78971602
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111417865.4A Active CN113838796B (en) | 2021-11-26 | 2021-11-26 | Preparation method of local oxide layer and preparation method of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113838796B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4971923A (en) * | 1988-04-26 | 1990-11-20 | Seiko Instruments Inc. | Method of making semiconductor device with different oxide film thicknesses |
| US5523255A (en) * | 1994-05-31 | 1996-06-04 | Samsung Electronics Co., Ltd. | Method for forming a device isolation film of a semiconductor device |
| US5894059A (en) * | 1997-05-30 | 1999-04-13 | Chartered Semiconductor Manufacturing Company Ltd. | Dislocation free local oxidation of silicon with suppression of narrow space field oxide thinning effect |
| CN1459841A (en) * | 2002-05-21 | 2003-12-03 | 旺宏电子科技股份有限公司 | Shalow groove isolation manufacturing method for preventing acute angle |
| CN105789135A (en) * | 2014-12-26 | 2016-07-20 | 中芯国际集成电路制造(上海)有限公司 | Method for eliminating beak effect |
-
2021
- 2021-11-26 CN CN202111417865.4A patent/CN113838796B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4971923A (en) * | 1988-04-26 | 1990-11-20 | Seiko Instruments Inc. | Method of making semiconductor device with different oxide film thicknesses |
| US5523255A (en) * | 1994-05-31 | 1996-06-04 | Samsung Electronics Co., Ltd. | Method for forming a device isolation film of a semiconductor device |
| US5894059A (en) * | 1997-05-30 | 1999-04-13 | Chartered Semiconductor Manufacturing Company Ltd. | Dislocation free local oxidation of silicon with suppression of narrow space field oxide thinning effect |
| CN1459841A (en) * | 2002-05-21 | 2003-12-03 | 旺宏电子科技股份有限公司 | Shalow groove isolation manufacturing method for preventing acute angle |
| CN105789135A (en) * | 2014-12-26 | 2016-07-20 | 中芯国际集成电路制造(上海)有限公司 | Method for eliminating beak effect |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113838796B (en) | 2022-03-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5420453A (en) | Intermediate structure for forming isolated regions of oxide | |
| US6001709A (en) | Modified LOCOS isolation process for semiconductor devices | |
| US4897364A (en) | Method for locos isolation using a framed oxidation mask and a polysilicon buffer layer | |
| JPS63314844A (en) | Manufacture of semiconductor device | |
| JP2812811B2 (en) | Method for forming field oxide film of semiconductor device | |
| JPS6175539A (en) | Manufacture of integrated circuit | |
| US20080135976A1 (en) | Semiconductor device and method of manufacturing the same | |
| US5972776A (en) | Method of forming a planar isolation structure in an integrated circuit | |
| US5814551A (en) | Methods for forming integrated circuit isolation layers using oxygen diffusing layers | |
| CN113838796B (en) | Preparation method of local oxide layer and preparation method of semiconductor device | |
| US5318922A (en) | Method for manufacturing a semiconductor device | |
| CN113838797B (en) | Preparation method of local oxide layer and preparation method of semiconductor device | |
| CN211350665U (en) | Semiconductor structure | |
| JPS62216246A (en) | Manufacture of semiconductor device | |
| CN111640799A (en) | Semiconductor structure and forming method thereof | |
| CN115547930B (en) | Semiconductor integrated circuit and method for manufacturing the same | |
| EP0410508A2 (en) | Process for defining and forming an active region of very limited dimensions in a semiconductor layer | |
| CN217444377U (en) | Semiconductor structure and transistor device | |
| CN111933712B (en) | Trench field effect transistor and forming method thereof | |
| EP3998626A1 (en) | Manufacturing method for semiconductor structure and semiconductor structure | |
| KR0174319B1 (en) | Method of forming element isolation region | |
| JPH05243215A (en) | Method for manufacturing improved polysilicon buffer type locos constitution structure | |
| US5977607A (en) | Method of forming isolated regions of oxide | |
| JP3019998B2 (en) | Method for manufacturing semiconductor film | |
| JPS6150398B2 (en) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 510000 No. 28, Fenghuang fifth road, Huangpu District, Guangzhou, Guangdong Patentee after: Yuexin Semiconductor Technology Co.,Ltd. Address before: 510000 No. 28, Fenghuang fifth road, Huangpu District, Guangzhou, Guangdong Patentee before: Guangzhou Yuexin Semiconductor Technology Co.,Ltd. |
|
| CP01 | Change in the name or title of a patent holder |