CN113832439A - Film preparation method and equipment - Google Patents
Film preparation method and equipment Download PDFInfo
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- CN113832439A CN113832439A CN202110976165.2A CN202110976165A CN113832439A CN 113832439 A CN113832439 A CN 113832439A CN 202110976165 A CN202110976165 A CN 202110976165A CN 113832439 A CN113832439 A CN 113832439A
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- 238000002360 preparation method Methods 0.000 title abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 133
- 239000007789 gas Substances 0.000 claims abstract description 128
- 239000002245 particle Substances 0.000 claims abstract description 96
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 94
- 239000013077 target material Substances 0.000 claims abstract description 63
- 229910052786 argon Inorganic materials 0.000 claims abstract description 61
- 238000004544 sputter deposition Methods 0.000 claims abstract description 47
- 230000005684 electric field Effects 0.000 claims abstract description 32
- -1 argon ions Chemical class 0.000 claims abstract description 28
- 230000009471 action Effects 0.000 claims abstract description 26
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 19
- 239000010409 thin film Substances 0.000 claims description 19
- 238000004519 manufacturing process Methods 0.000 claims description 9
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 8
- 238000005086 pumping Methods 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 238000000605 extraction Methods 0.000 claims description 5
- 239000011261 inert gas Substances 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 9
- 239000010408 film Substances 0.000 description 15
- 239000007888 film coating Substances 0.000 description 6
- 238000009501 film coating Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3435—Applying energy to the substrate during sputtering
- C23C14/345—Applying energy to the substrate during sputtering using substrate bias
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The application provides a film preparation method and equipment, comprising the following steps: providing a substrate and a target material, wherein the substrate is arranged opposite to the target material, a cavity is arranged between the substrate and the target material, and an orthogonal electric field and a magnetic field are established on one side of the target material opposite to the substrate; introducing argon to one side of the target material, which is opposite to the substrate, so as to ionize the argon into argon ions and electrons under the action of an electric field; bombarding the target by the argon ions under the action of a magnetic field so as to sputter the target to generate sputtering particles; and introducing a first gas into the cavity so that the sputtered particles are deposited on the substrate after colliding with the first gas. After the sputtering particles collide with the first gas, the energy of the sputtering particles is reduced, so that the bombardment effect of the sputtering particles on the substrate is reduced, and the damage to the existing film layer of the substrate is reduced.
Description
Technical Field
The application relates to the technical field of semiconductors, in particular to a thin film preparation method and equipment.
Background
Magnetron sputtering is one type of Physical Vapor Deposition (PVD). The general sputtering method can be used for preparing multi-materials such as metal, semiconductor, insulator and the like, and has the advantages of simple equipment, easy control, large film coating area, strong adhesive force and the like. Therefore, the method is widely applied to the preparation of films.
The working principle of magnetron sputtering is that an orthogonal electric field and a magnetic field are established on the surface of a target material, argon gas introduced during film coating is ionized into argon ions and electrons under the action of the electric field, wherein the electrons are constrained by the magnetic field to move in a spiral cycloid manner, the probability of impact ionization with the argon gas is increased, the ionized argon ions bombard the surface of the target material at high energy under the acceleration of the electric field, so that target material molecules or atoms are sputtered from the surface and deposited on the surface of a substrate, and the film coating on the surface of the substrate is realized.
However, since the sputtering particles have higher energy and have a certain bombardment effect on the substrate, the existing film layer of the substrate may be damaged.
Disclosure of Invention
In view of the above, the present application is directed to a method and an apparatus for manufacturing a thin film, which can reduce damage to an existing film layer of a substrate during the thin film manufacturing process.
In order to achieve the purpose, the technical scheme is as follows:
in a first aspect, an embodiment of the present application provides a method for preparing a thin film, including:
providing a substrate and a target material; the substrate is arranged opposite to the target material;
a cavity is arranged between the substrate and the target material;
establishing an orthogonal electric field and magnetic field at one side of the target material, which is opposite to the substrate;
introducing argon to one side, opposite to the substrate, of the target, so as to ionize the argon into argon ions and electrons under the action of the electric field; the argon ions bombard the target under the action of a magnetic field so that the target is sputtered to generate sputtered particles;
and introducing a first gas into the cavity, so that the sputtering particles are deposited on the substrate after colliding with the first gas.
Optionally, the first gas is an inert gas.
Optionally, the cavity has two side openings;
the first side opening of the cavity is arranged right opposite to the target material; the sputtered particles and the first gas enter the cavity through the first side opening;
the second side opening of the cavity is opposite to the substrate; the sputtering particles are deposited on the substrate through the second side opening after being collided by the first gas.
Optionally, the cavity has a three-sided opening;
the first side opening of the cavity is arranged right opposite to the target material; the sputtered particles enter the cavity through the first side opening;
the second side opening of the cavity is opposite to the substrate; the sputtering particles are deposited on the substrate through the second side opening after being collided by the first gas;
the third side opening of the cavity is connected with a first gas source; the first gas delivered by the first gas source enters the cavity through the third side opening to collide with the sputtered particles.
Optionally, the cavity has four side openings;
the first side opening of the cavity is arranged right opposite to the target material; the sputtered particles enter the cavity through the first side opening;
the second side opening of the cavity is opposite to the substrate; the sputtering particles are deposited on the substrate through the second side opening after being collided by the first gas;
the third side opening of the cavity is connected with a first gas source; the first gas delivered by the first gas source enters the cavity through the third side opening to collide with the sputtered particles;
the fourth side opening of the cavity is connected with air extraction equipment; the first gas is pumped out from the fourth side opening through the pumping device.
In a second aspect, an embodiment of the present application provides a thin film manufacturing apparatus, including:
the magnetron sputtering target holder is used for placing the target material;
a magnetron sputtering base pedestal for placing the substrate; the magnetron sputtering target seat is arranged opposite to the magnetron sputtering base pedestal;
a cavity disposed between the magnetron sputtering target holder and the magnetron sputtering base pedestal;
the electric field and magnetic field emission device is used for establishing an orthogonal electric field and magnetic field on one side of the target material, which is opposite to the substrate;
the argon gas source is used for introducing argon gas to one side, opposite to the substrate, of the target material so as to ionize the argon gas into argon ions and electrons under the action of the electric field; the argon ions bombard the target under the action of a magnetic field so that the target is sputtered to generate sputtered particles;
and the first gas source is connected with the cavity and used for introducing first gas into the cavity so as to enable the sputtering particles to be deposited on the substrate after colliding with the first gas.
Optionally, the cavity has two side openings;
the first side opening of the cavity is arranged right opposite to the target material; the sputtered particles and the first gas enter the cavity through the first side opening;
the second side opening of the cavity is opposite to the substrate; the sputtering particles are deposited on the substrate through the second side opening after being collided by the first gas.
Optionally, the cavity has a three-sided opening;
the first side opening of the cavity is arranged right opposite to the target material; the sputtered particles enter the cavity through the first side opening;
the second side opening of the cavity is opposite to the substrate; the sputtering particles are deposited on the substrate through the second side opening after being collided by the first gas;
the third side opening of the cavity is connected with a first gas source; the first gas delivered by the first gas source enters the cavity through the third side opening to collide with the sputtered particles.
Optionally, the cavity has four side openings;
the first side opening of the cavity is arranged right opposite to the target material; the sputtered particles enter the cavity through the first side opening;
the second side opening of the cavity is opposite to the substrate; the sputtering particles are deposited on the substrate through the second side opening after being collided by the first gas;
the third side opening of the cavity is connected with a first gas source; the first gas delivered by the first gas source enters the cavity through the third side opening to collide with the sputtered particles;
the fourth side opening of the cavity is connected with air extraction equipment; the first gas is pumped out from the fourth side opening through the pumping device.
Optionally, the first side opening and the second side opening are comprised of a plurality of apertures.
Compared with the prior art, the method has the following advantages:
the embodiment of the application provides a film preparation method and equipment, which comprise the following steps: providing a substrate and a target material, wherein the substrate is arranged opposite to the target material, a cavity is arranged between the substrate and the target material, and an orthogonal electric field and a magnetic field are established on one side of the target material opposite to the substrate; introducing argon to one side of the target material, which is opposite to the substrate, so as to ionize the argon into argon ions and electrons under the action of an electric field; bombarding the target by the argon ions under the action of a magnetic field so as to sputter the target to generate sputtering particles; and introducing a first gas into the cavity so that the sputtered particles are deposited on the substrate after colliding with the first gas. After the sputtering particles collide with the first gas, the energy of the sputtering particles is reduced, so that the bombardment effect of the sputtering particles on the substrate is reduced, and the damage to the existing film layer of the substrate is reduced.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
FIG. 1 is a flow chart illustrating a method for preparing a thin film according to an embodiment of the present disclosure;
FIG. 2 is a schematic diagram of a thin film formation apparatus according to an embodiment of the present disclosure;
FIG. 3 is a schematic view of another thin film formation apparatus provided in an embodiment of the present application;
FIG. 4 is a schematic view of another thin film formation apparatus provided in an embodiment of the present application;
FIG. 5 is a schematic diagram of another thin film formation apparatus provided in an embodiment of the present application.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present application more comprehensible, embodiments accompanying the present application are described in detail below with reference to the accompanying drawings.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application, but the present application may be practiced in other ways than those described herein, and it will be apparent to those of ordinary skill in the art that the present application is not limited by the specific embodiments disclosed below.
As described in the background, magnetron sputtering is one type of Physical Vapor Deposition (PVD). The general sputtering method can be used for preparing multi-materials such as metal, semiconductor, insulator and the like, and has the advantages of simple equipment, easy control, large film coating area, strong adhesive force and the like. Therefore, the method is widely applied to the preparation of films.
The working principle of magnetron sputtering is that an orthogonal electric field and a magnetic field are established on the surface of a target material, argon gas introduced during film coating is ionized into argon ions and electrons under the action of the electric field, wherein the electrons are constrained by the magnetic field to move in a spiral cycloid manner, the probability of impact ionization with the argon gas is increased, the ionized argon ions bombard the surface of the target material at high energy under the acceleration of the electric field, so that target material molecules or atoms are sputtered from the surface and deposited on the surface of a substrate, and the film coating on the surface of the substrate is realized.
However, since the sputtering particles have higher energy and have a certain bombardment effect on the substrate, the existing film layer of the substrate may be damaged.
In order to solve the above technical problem, an embodiment of the present application provides a method and an apparatus for manufacturing a thin film, including: providing a substrate and a target material, wherein the substrate is arranged opposite to the target material, a cavity is arranged between the substrate and the target material, and an orthogonal electric field and a magnetic field are established on one side of the target material opposite to the substrate; introducing argon to one side of the target material, which is opposite to the substrate, so as to ionize the argon into argon ions and electrons under the action of an electric field; bombarding the target by the argon ions under the action of a magnetic field so as to sputter the target to generate sputtering particles; and introducing a first gas into the cavity so that the sputtered particles are deposited on the substrate after colliding with the first gas. After the sputtering particles collide with the first gas, the energy of the sputtering particles is reduced, so that the bombardment effect of the sputtering particles on the substrate is reduced, and the damage to the existing film layer of the substrate is reduced.
Exemplary method
For the sake of understanding, the following describes a method for manufacturing a device provided in the embodiments of the present application in detail with reference to the accompanying drawings.
Referring to fig. 1, a schematic diagram of a thin film manufacturing method provided in an embodiment of the present application is shown, and referring to fig. 2, a schematic diagram of a thin film manufacturing apparatus provided in an embodiment of the present application is shown, where the method may include the following steps:
s101: providing a substrate and a target material; the substrate is arranged opposite to the target.
In the embodiment of the present application, the thin film may be formed on the substrate 103, the substrate 103 provides a support for the thin film formed on the surface of the substrate, and the substrate 103 may be a glass substrate or a flexible substrate. The target 101 is a sputtering source for sputtering various functional films on the substrate 103, and may be determined according to the type of the film to be formed, and the embodiment of the present application is not particularly limited herein, and may be specifically set by a person skilled in the art according to practical situations.
Referring to fig. 2, the substrate 103 may be disposed opposite to the target 101, so that the particles sputtered from the target may be directly deposited on the surface of the substrate 103 to form a thin film after magnetron sputtering.
S102: a cavity is arranged between the substrate and the target material;
s103: establishing an orthogonal electric field and magnetic field at one side of the target material, which is opposite to the substrate;
s104: introducing argon to one side, opposite to the substrate, of the target, so as to ionize the argon into argon ions and electrons under the action of the electric field; the argon ions bombard the target under the action of a magnetic field so that the target is sputtered to generate sputtered particles;
s105: and introducing a first gas into the cavity, so that the sputtering particles are deposited on the substrate after colliding with the first gas.
Referring to fig. 2, a cavity 104 may be disposed between the substrate 103 and the target 101, and optionally, the cavity 104 may have two side openings, a first side opening 105 of the cavity 104 is disposed opposite to the target 104, after an orthogonal electric field and magnetic field (not shown in the figure) are established on the surface of the substrate 103, argon gas is introduced into one side of the target 101 opposite to the substrate 103 through an argon gas source 111 to ionize the argon gas into argon ions and electrons under the action of the electric field, the argon ions bombard the target 101 under the action of the magnetic field, so that the target 101 is sputtered to generate sputtered particles, and a first gas is introduced into the cavity 104 through a first gas source 110, so that the sputtered particles collide with the first gas and are deposited on the substrate 103.
It should be noted that, in the embodiment of the present application, the electric field strength, the magnetic field strength, the gas flow rate, and the like are not specifically limited, and may be set by those skilled in the art according to the actual situation, and optionally, the first gas provided in the embodiment of the present application may be one or more of inert gases such as helium (He), neon (Ne), argon (Ar), krypton (Kr), and xenon (Xe).
Alternatively, the sputtered particles and the first gas enter the cavity 104 through the first side opening 105, and the energy of the sputtered particles is reduced because the sputtered particles and the first gas may continuously collide in the cavity 104.
The second side opening 106 of the cavity 104 is arranged opposite to the substrate 103, the sputtered particles are deposited on the substrate 103 through the second side opening 106 after being collided by the first gas, and the collision energy of the sputtered particles and the first gas in the cavity 104 is reduced, so that the bombardment effect on the substrate 103 is reduced, and the damage to the substrate 103 is reduced.
Alternatively, as shown in FIG. 3, the cavity 104 has a three-sided opening;
a first side opening 105 of the cavity is arranged opposite to the target 101, and sputtering particles enter the cavity 104 through the first side opening 105;
the second side opening 106 of the cavity is arranged opposite to the substrate 103, and the sputtered particles are deposited on the substrate 103 through the second side opening 106 after being collided by the first gas;
the third side opening 107 of the cavity is connected with a first gas source 110; the first gas delivered from the first gas source 110 enters the cavity 104 through the third side opening 107 to collide with the sputtered particles.
Alternatively, as shown in FIG. 4, the cavity 104 has four-sided openings;
a first side opening 105 of the cavity 104 is arranged opposite to the target 101; the sputtered particles enter the cavity 104 through the first side opening 105;
the second side opening 106 of the cavity 104 is disposed opposite the substrate 103; the sputtered particles are collided by the first gas and then deposited on the substrate 103 through the second side opening 106;
the third side opening 107 of the cavity 104 is connected to a first gas source 110; the first gas delivered by the first gas source 110 enters the cavity 104 through the third side opening 107 to collide with the sputtered particles;
the fourth side opening 108 of the cavity 104 is connected with a gas suction device 112; the first gas is pumped out of the fourth side opening 108 through a pumping device 112.
Therefore, the first gas can form a thin gas layer in the cavity 104, the sputtered particles need to be deposited on the substrate 103 through the thin gas layer, in the process, the sputtered particles are continuously collided by the first gas in the thin gas layer, and the energy of the particles passing through the gas layer is reduced, so that the bombardment effect on the substrate 103 is reduced, and the damage to the substrate 103 is reduced.
Alternatively, as shown in fig. 5, the first side opening 105 and the second side opening 106 may be composed of a plurality of holes.
The application provides a film preparation method, which comprises the following steps: providing a substrate and a target material, wherein the substrate is arranged opposite to the target material, a cavity is arranged between the substrate and the target material, and an orthogonal electric field and a magnetic field are established on one side of the target material opposite to the substrate; introducing argon to one side of the target material, which is opposite to the substrate, so as to ionize the argon into argon ions and electrons under the action of an electric field; bombarding the target by the argon ions under the action of a magnetic field so as to sputter the target to generate sputtering particles; and introducing a first gas into the cavity so that the sputtered particles are deposited on the substrate after colliding with the first gas. After the sputtering particles collide with the first gas, the energy of the sputtering particles is reduced, so that the bombardment effect of the sputtering particles on the substrate is reduced, and the damage to the existing film layer of the substrate is reduced.
Exemplary device
Referring to fig. 2, a schematic diagram of a thin film manufacturing apparatus provided in an embodiment of the present application includes:
a magnetron sputtering target holder 100 for placing the target 101;
a magnetron sputtering base stand 102 for placing the substrate 103; the magnetron sputtering target holder 100 is arranged opposite to the magnetron sputtering base pedestal 102;
a cavity 104 disposed between the magnetron sputtering target holder 100 and the magnetron sputtering base pedestal 102;
an electric and magnetic field emitting device (not shown in the figure) for establishing orthogonal electric and magnetic fields at a side of the target 101 facing the substrate 100;
an argon gas source 111, configured to introduce argon gas to a side of the target 101, which faces the substrate 103, so as to ionize the argon gas into argon ions and electrons under the action of the electric field; the argon ions bombard the target 101 under the action of a magnetic field, so that the target 101 is sputtered to generate sputtered particles;
and the first gas source 110 is connected with the cavity 104 and used for introducing a first gas into the cavity 104 so that the sputtered particles are deposited on the substrate 103 after colliding with the first gas.
Optionally, the cavity has two side openings;
the first side opening of the cavity is arranged right opposite to the target material; the sputtered particles and the first gas enter the cavity through the first side opening;
the second side opening of the cavity is opposite to the substrate; the sputtering particles are deposited on the substrate through the second side opening after being collided by the first gas.
Optionally, the cavity has a three-sided opening;
the first side opening of the cavity is arranged right opposite to the target material; the sputtered particles enter the cavity through the first side opening;
the second side opening of the cavity is opposite to the substrate; the sputtering particles are deposited on the substrate through the second side opening after being collided by the first gas;
the third side opening of the cavity is connected with a first gas source; the first gas delivered by the first gas source enters the cavity through the third side opening to collide with the sputtered particles.
Optionally, the cavity has four side openings;
the first side opening of the cavity is arranged right opposite to the target material; the sputtered particles enter the cavity through the first side opening;
the second side opening of the cavity is opposite to the substrate; the sputtering particles are deposited on the substrate through the second side opening after being collided by the first gas;
the third side opening of the cavity is connected with a first gas source; the first gas delivered by the first gas source enters the cavity through the third side opening to collide with the sputtered particles;
the fourth side opening of the cavity is connected with air extraction equipment; the first gas is pumped out from the fourth side opening through the pumping device.
Optionally, the first side opening and the second side opening are comprised of a plurality of apertures.
The embodiment of the application provides film preparation equipment, which is used for providing a substrate and a target material, wherein the substrate is arranged right opposite to the target material, a cavity is arranged between the substrate and the target material, and an orthogonal electric field and a magnetic field are established on one side of the target material, which is right opposite to the substrate; introducing argon to one side of the target material, which is opposite to the substrate, so as to ionize the argon into argon ions and electrons under the action of an electric field; bombarding the target by the argon ions under the action of a magnetic field so as to sputter the target to generate sputtering particles; and introducing a first gas into the cavity so that the sputtered particles are deposited on the substrate after colliding with the first gas. After the sputtering particles collide with the first gas, the energy of the sputtering particles is reduced, so that the bombardment effect of the sputtering particles on the substrate is reduced, and the damage to the existing film layer of the substrate is reduced.
The embodiments in the present specification are described in a progressive manner, and the same and similar parts among the embodiments are referred to each other, and each embodiment focuses on the differences from the other embodiments. In particular, for the apparatus embodiment, since it is substantially similar to the method embodiment, it is relatively simple to describe, and reference may be made to some descriptions of the method embodiment for relevant points.
The foregoing is merely a preferred embodiment of the present application and, although the present application discloses the foregoing preferred embodiments, the present application is not limited thereto. Those skilled in the art can now make numerous possible variations and modifications to the disclosed embodiments, or modify equivalent embodiments, using the methods and techniques disclosed above, without departing from the scope of the claimed embodiments. Therefore, any simple modification, equivalent change and modification made to the above embodiments according to the technical essence of the present application still fall within the protection scope of the technical solution of the present application without departing from the content of the technical solution of the present application.
Claims (10)
1. A method of making a thin film, comprising:
providing a substrate and a target material; the substrate is arranged opposite to the target material;
a cavity is arranged between the substrate and the target material;
establishing an orthogonal electric field and magnetic field at one side of the target material, which is opposite to the substrate;
introducing argon to one side, opposite to the substrate, of the target, so as to ionize the argon into argon ions and electrons under the action of the electric field; the argon ions bombard the target under the action of a magnetic field so that the target is sputtered to generate sputtered particles;
and introducing a first gas into the cavity, so that the sputtering particles are deposited on the substrate after colliding with the first gas.
2. The method of claim 1, wherein the first gas is an inert gas.
3. The method of claim 1, wherein the cavity has two side openings;
the first side opening of the cavity is arranged right opposite to the target material; the sputtered particles and the first gas enter the cavity through the first side opening;
the second side opening of the cavity is opposite to the substrate; the sputtering particles are deposited on the substrate through the second side opening after being collided by the first gas.
4. The method of claim 1, wherein the cavity has a three-sided opening;
the first side opening of the cavity is arranged right opposite to the target material; the sputtered particles enter the cavity through the first side opening;
the second side opening of the cavity is opposite to the substrate; the sputtering particles are deposited on the substrate through the second side opening after being collided by the first gas;
the third side opening of the cavity is connected with a first gas source; the first gas delivered by the first gas source enters the cavity through the third side opening to collide with the sputtered particles.
5. The method of claim 1, wherein the cavity has four-sided openings;
the first side opening of the cavity is arranged right opposite to the target material; the sputtered particles enter the cavity through the first side opening;
the second side opening of the cavity is opposite to the substrate; the sputtering particles are deposited on the substrate through the second side opening after being collided by the first gas;
the third side opening of the cavity is connected with a first gas source; the first gas delivered by the first gas source enters the cavity through the third side opening to collide with the sputtered particles;
the fourth side opening of the cavity is connected with air extraction equipment; the first gas is pumped out from the fourth side opening through the pumping device.
6. A thin film formation apparatus, comprising:
the magnetron sputtering target holder is used for placing the target material;
a magnetron sputtering base pedestal for placing the substrate; the magnetron sputtering target seat is arranged opposite to the magnetron sputtering base pedestal;
a cavity disposed between the magnetron sputtering target holder and the magnetron sputtering base pedestal;
the electric field and magnetic field emission device is used for establishing an orthogonal electric field and magnetic field on one side of the target material, which is opposite to the substrate;
the argon gas source is used for introducing argon gas to one side, opposite to the substrate, of the target material so as to ionize the argon gas into argon ions and electrons under the action of the electric field; the argon ions bombard the target under the action of a magnetic field so that the target is sputtered to generate sputtered particles;
and the first gas source is connected with the cavity and used for introducing first gas into the cavity so as to enable the sputtering particles to be deposited on the substrate after colliding with the first gas.
7. The apparatus of claim 6, wherein the cavity has two side openings;
the first side opening of the cavity is arranged right opposite to the target material; the sputtered particles and the first gas enter the cavity through the first side opening;
the second side opening of the cavity is opposite to the substrate; the sputtering particles are deposited on the substrate through the second side opening after being collided by the first gas.
8. The apparatus of claim 6, wherein the cavity has a three-sided opening;
the first side opening of the cavity is arranged right opposite to the target material; the sputtered particles enter the cavity through the first side opening;
the second side opening of the cavity is opposite to the substrate; the sputtering particles are deposited on the substrate through the second side opening after being collided by the first gas;
the third side opening of the cavity is connected with a first gas source; the first gas delivered by the first gas source enters the cavity through the third side opening to collide with the sputtered particles.
9. The apparatus of claim 6, wherein the cavity has four-sided openings;
the first side opening of the cavity is arranged right opposite to the target material; the sputtered particles enter the cavity through the first side opening;
the second side opening of the cavity is opposite to the substrate; the sputtering particles are deposited on the substrate through the second side opening after being collided by the first gas;
the third side opening of the cavity is connected with a first gas source; the first gas delivered by the first gas source enters the cavity through the third side opening to collide with the sputtered particles;
the fourth side opening of the cavity is connected with air extraction equipment; the first gas is pumped out from the fourth side opening through the pumping device.
10. The apparatus of any of claims 7-9, wherein the first side opening and the second side opening are comprised of a plurality of apertures.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114921763A (en) * | 2022-05-19 | 2022-08-19 | 江苏利成精密科技有限公司 | Method for forming film by adopting magnetron sputtering |
Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01102891A (en) * | 1987-10-15 | 1989-04-20 | Res Dev Corp Of Japan | Formation of electroluminescent thin film |
| JP2000124210A (en) * | 1998-10-20 | 2000-04-28 | Sony Corp | Apparatus and method for sputtering |
| JP2001230218A (en) * | 2000-02-17 | 2001-08-24 | Ebara Corp | Method and equipment for forming wiring by sputtering, and target material used therefor |
| US20020033329A1 (en) * | 2000-09-21 | 2002-03-21 | Promos Technologies Inc. | Method for maintaining the cleanness of a vacuum chamber of a physical vapor deposition system |
| JP2003344606A (en) * | 2002-05-29 | 2003-12-03 | Canon Inc | Film formed by optical thin film for high performance vacuum ultraviolet wavelength range by reactive dc magnetron sputtering method |
| US20040089535A1 (en) * | 2002-08-16 | 2004-05-13 | The Regents Of The University Of California. | Process and apparatus for pulsed dc magnetron reactive sputtering of thin film coatings on large substrates using smaller sputter cathodes |
| CN1800441A (en) * | 2005-01-05 | 2006-07-12 | 鸿富锦精密工业（深圳）有限公司 | Precipitation method and device for plasma reinforced film |
| CN102851645A (en) * | 2012-10-11 | 2013-01-02 | 电子科技大学 | Preparation method of low-residual-stress copper film |
| CN103476581A (en) * | 2011-03-31 | 2013-12-25 | 三菱树脂株式会社 | Gas barrier laminate film, and method for producing same |
| CN103938164A (en) * | 2013-01-22 | 2014-07-23 | 北京北方微电子基地设备工艺研究中心有限责任公司 | ITO thin film sputtering process and ITO thin film sputtering device |
| CN106442629A (en) * | 2016-09-09 | 2017-02-22 | 浙江理工大学 | Preparation method of RGO (reduced graphene oxide) thin film moisture-sensitive sensor |
| CN106498351A (en) * | 2016-11-03 | 2017-03-15 | 天津津航技术物理研究所 | A kind of method for improving ion beam reactive sputtering method preparation carbonization germanium film firmness |
-
2021
- 2021-08-24 CN CN202110976165.2A patent/CN113832439A/en active Pending
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01102891A (en) * | 1987-10-15 | 1989-04-20 | Res Dev Corp Of Japan | Formation of electroluminescent thin film |
| JP2000124210A (en) * | 1998-10-20 | 2000-04-28 | Sony Corp | Apparatus and method for sputtering |
| JP2001230218A (en) * | 2000-02-17 | 2001-08-24 | Ebara Corp | Method and equipment for forming wiring by sputtering, and target material used therefor |
| US20020033329A1 (en) * | 2000-09-21 | 2002-03-21 | Promos Technologies Inc. | Method for maintaining the cleanness of a vacuum chamber of a physical vapor deposition system |
| JP2003344606A (en) * | 2002-05-29 | 2003-12-03 | Canon Inc | Film formed by optical thin film for high performance vacuum ultraviolet wavelength range by reactive dc magnetron sputtering method |
| US20040089535A1 (en) * | 2002-08-16 | 2004-05-13 | The Regents Of The University Of California. | Process and apparatus for pulsed dc magnetron reactive sputtering of thin film coatings on large substrates using smaller sputter cathodes |
| CN1800441A (en) * | 2005-01-05 | 2006-07-12 | 鸿富锦精密工业（深圳）有限公司 | Precipitation method and device for plasma reinforced film |
| CN103476581A (en) * | 2011-03-31 | 2013-12-25 | 三菱树脂株式会社 | Gas barrier laminate film, and method for producing same |
| CN102851645A (en) * | 2012-10-11 | 2013-01-02 | 电子科技大学 | Preparation method of low-residual-stress copper film |
| CN103938164A (en) * | 2013-01-22 | 2014-07-23 | 北京北方微电子基地设备工艺研究中心有限责任公司 | ITO thin film sputtering process and ITO thin film sputtering device |
| CN106442629A (en) * | 2016-09-09 | 2017-02-22 | 浙江理工大学 | Preparation method of RGO (reduced graphene oxide) thin film moisture-sensitive sensor |
| CN106498351A (en) * | 2016-11-03 | 2017-03-15 | 天津津航技术物理研究所 | A kind of method for improving ion beam reactive sputtering method preparation carbonization germanium film firmness |
Non-Patent Citations (1)
| Title |
|---|
| 张树林: "《真空技术物理基础》", 31 July 1988, 东北工学院出版社, pages: 40 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114921763A (en) * | 2022-05-19 | 2022-08-19 | 江苏利成精密科技有限公司 | Method for forming film by adopting magnetron sputtering |
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