CN113823736A - Volatile memristor type PUF (physical unclonable function) device, preparation method and device thereof and PUF encryption chip - Google Patents
Volatile memristor type PUF (physical unclonable function) device, preparation method and device thereof and PUF encryption chip Download PDFInfo
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- H10N70/011—Manufacture or treatment of multistable switching devices
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- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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Abstract
The invention discloses a volatile memristive PUF device and a preparation method and device thereof and a PUF encryption chip. The function self-destruction of the PUF device can be conveniently controlled according to actual requirements, and the PUF device has wide applicability to the safety protection of PUF keys. In addition, the hydrolysate of the dissolved material has good biocompatibility and is green and environment-friendly.
Description
Technical Field
The invention belongs to the technical field of semiconductor devices, and particularly relates to a volatile memristor type PUF device, a manufacturing method and device thereof, and a PUF encryption chip.
Background
Physical Unclonable Function (PUF for short) utilizes entity differences introduced by actual manufacturing processes, and has wide application values in the aspects of key generation, equipment authentication, value information protection and the like due to inherent randomness, uniqueness, confidentiality and non-clonality. Under the influence of the inherent construction difference of physical entities, the response generated by the PUF to each input stimulus has obvious randomness and unpredictability, and the response output of different PUF devices has obvious difference to the same input stimulus, so that each chip is endowed with unique independent fingerprint information, and the irreplaceable superiority makes the PUF technology a research hotspot in recent years.
The process parameters of the traditional silicon-based PUF device often have inherent deviation, so that the output response randomness of the PUF is not ideal. As a typical representative in a novel memory, the memristor is composed of a sandwich structure composed of a top electrode, a bottom electrode and a resistance change conversion layer, resistance state conversion of the memristor depends on growth and fracture behaviors of conductive filaments in the resistance change layer, the process has obvious randomness, the randomness is not changed along with the improvement of integration level, the memristor has vivid non-clonality, and the memristor has natural advantages for the construction of PUFs.
Ligang Gao et al are based on a crisscross Pt/HfOxThe PUF is realized by a Resistive Random Access Memory (RRAM) array of/TiN, and the calculated inter-chip Hamming Distance (HD) is calculated by taking 28 RRAM arrays as samplesinter) Only 46.2 percent, see the scheme of L.Gao, P.Chen, R.Liu and S.Yu.physical Unclonable Function amplification noise circuits in reactive Cross-point array, IEEE Transactions on Electron Devices,63,3109.2016, fully utilizes the resistance state distribution randomness of RRAM, but the uniqueness of the constructed PUF array needs to be further improved; shimeng Yu et al are based on HfO2The cross-type 1T1R (transistor in series with RRAM) array of (1) built the PUF function, realized the PUF device with 49.8% Hamming distance between chips at the device scale of 1KB, seeThe scheme of R.Liu, H.Wu, Y.Pang, H.Qian, S.Yu.Experimental Characterization of Physical Unclonable Function Based on 1kb Resistive Random Access Memory devices Letters,36,1380,2015 plays the advantage of the Resistive Random property of the RRAM while suppressing the leakage current of the system, but the preparation process is complex and the RRAM and the transistor need to be integrated in series; joshua Yang et al based on volatile memristor Au/SiO2The Ag/Au array constructs PUF function, and the device utilizes the migration behavior of active component Ag in the resistance change conversion layer under the action of external voltage, HDinterThe method has the advantages that the method is up to 50.68 percent, has higher uniqueness among chips, and is referred to as the volatile characteristics of a memristor in the scheme of R.Zhang, H.Jiang, Z.R.Wang, P.Lin, Y.ZHuo, D.Holcomb, D.H.Zhang, J.J.Yang, Q.Xia.Nanoscale differential memories as physical unclonable functions, Nanoscale and 10,2721,2018, so that the precise extraction process of the reference current is simplified.
However, the competition between attack and defense has never been stopped, and a series of key technical challenges still exist in developing a secure and reliable PUF device, and how to endow the PUF cryptographic chip itself with the strain capability in a special emergency needs to be further considered.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a volatile memristive PUF device, a manufacturing method and a device thereof, and a PUF encryption chip.
In a first aspect, an embodiment of the present invention provides a method for manufacturing a volatile memristive PUF device, including:
preparing a bottom electrode on a substrate by using a water-soluble inert metal material;
depositing an active metal material on the bottom electrode to obtain a bottom active metal layer;
preparing a resistance change conversion layer on the bottom active metal layer by using a water-soluble medium material;
depositing the active metal material on the resistance change layer in a direction crossing the bottom electrode to obtain a top active metal layer;
preparing a top electrode on the top active metal layer by using the water-soluble inert metal material to obtain a water-soluble memristor array;
and determining the PUF key according to the threshold voltage distribution condition and the reference voltage of the water-soluble memristor array to obtain the volatile memristor type PUF device.
Optionally, the preparing a bottom electrode on a substrate by using a water-soluble inert metal material includes:
fixing a first strip-shaped array physical mask with the line width of 10-50 microns on the substrate;
and preparing a water-soluble inert metal material with the thickness of 45-50 nanometers on the substrate by adopting magnetron sputtering to obtain the bottom electrode.
Optionally, depositing an active metal material on the bottom electrode to obtain a bottom active metal layer includes:
depositing 3-5 nm of active metal material on the bottom electrode through magnetron sputtering to obtain a bottom active metal layer.
Optionally, the preparing a resistance change layer on the bottom active metal layer by using a water-soluble dielectric material includes:
replacing the first physical mask plate with a square array cross point mask plate, and aligning and attaching the square array cross point mask plate to the bottom active metal layer;
and depositing a water-soluble medium material with the thickness of 18-22 nanometers on the bottom active metal layer to obtain the resistive switching layer.
Optionally, depositing the active metal material on the resistive switching layer in a direction crossing the bottom electrode to obtain a top active metal layer, including:
replacing the square array cross point mask plate with a strip-shaped array-shaped second physical mask plate, aligning and attaching the square array cross point mask plate and the bottom electrode to the resistive switching layer in a cross direction, wherein the line width of the second physical mask plate is the same as that of the first physical mask plate;
depositing an active metal material with the thickness of 3-5 nanometers on the resistance change layer by adopting magnetron sputtering to obtain a top active metal layer;
preparing a top electrode on the top active metal layer by using a water-soluble inert metal material to obtain a water-soluble memristor array, wherein the preparation method comprises the following steps:
and preparing the water-soluble inert metal material with the thickness of 45-50 nanometers on the top active metal layer by adopting magnetron sputtering to obtain the water-soluble memristor array.
Optionally, before the preparing the bottom electrode on the substrate by using the water-soluble inert metal material, the method further includes:
cleaning the initial substrate;
carrying out ultrasonic treatment on the cleaned substrate by using acetone and isopropanol respectively to obtain an ultrasonically treated substrate;
and washing the substrate subjected to ultrasonic treatment by using deionized water, and blow-drying by using a nitrogen gun to obtain the substrate.
Optionally, the determining a PUF key according to the threshold voltage distribution condition and the reference voltage of the water-soluble memristor array to obtain the volatile memristor PUF device includes:
testing the resistance value conversion characteristic of the water-soluble memristor array by using a semiconductor electrical parameter analyzer;
acquiring the distribution condition of the threshold voltage of the water-soluble memristor array;
and setting a reference voltage according to the distribution condition of the threshold voltage of the water-soluble memristor array, determining a PUF key, and obtaining the volatile memristor type PUF device.
In a second aspect, the present invention provides an apparatus for manufacturing a volatile memristive PUF device, comprising:
a bottom electrode preparation module for preparing a bottom electrode on a substrate using a water-soluble inert metal material;
the active metal layer preparation module is used for depositing an active metal material on the bottom electrode to obtain a bottom active metal layer;
the resistive switching layer preparation module is used for preparing a resistive switching layer on the bottom active metal layer by using a water-soluble dielectric material;
the active metal layer preparation module is also used for depositing an active metal material on the resistance change layer in a direction which is crossed with the bottom electrode to obtain a top active metal layer;
the top electrode preparation module is used for preparing a top electrode on the top active metal layer by using a water-soluble inert metal material to obtain a water-soluble memristor array;
and the key determining module is used for determining the PUF key according to the threshold voltage distribution condition and the reference voltage of the water-soluble memristor array to obtain the volatile memristor type PUF device.
Optionally, the bottom electrode preparation module is specifically configured to:
fixing a first strip-shaped array physical mask with the line width of 10-50 microns on the substrate;
and preparing a water-soluble inert metal material with the thickness of 45-50 nanometers on the substrate by adopting magnetron sputtering to obtain the bottom electrode.
Optionally, the active metal layer preparation module is specifically configured to:
depositing 3-5 nm of active metal material on the bottom electrode through magnetron sputtering to obtain a bottom active metal layer.
Optionally, the resistive switching layer preparation module is specifically configured to:
replacing the first physical mask plate with a square array cross point mask plate, and aligning and attaching the square array cross point mask plate on the bottom active metal layer;
and depositing a water-soluble medium material with the thickness of 18-22 nanometers on the bottom active metal layer to obtain the resistive switching layer.
Optionally, the active metal layer preparation module is specifically configured to:
replacing the square array cross point mask plate with a strip-shaped array-shaped second physical mask plate, aligning and attaching the square array cross point mask plate and the bottom electrode to the resistive switching layer in a cross direction, wherein the line width of the second physical mask plate is the same as that of the first physical mask plate;
depositing an active metal material with the thickness of 3-5 nanometers on the resistance change layer by adopting magnetron sputtering to obtain a top active metal layer;
the top electrode preparation module is specifically configured to:
and preparing the water-soluble inert metal material with the thickness of 45-50 nanometers on the top active metal layer by adopting magnetron sputtering to obtain the water-soluble memristor array.
Optionally, the apparatus further comprises:
the substrate preparation module is used for cleaning an initial substrate; carrying out ultrasonic treatment on the cleaned substrate by using acetone and isopropanol respectively to obtain an ultrasonically treated substrate; and washing the substrate subjected to ultrasonic treatment by using deionized water, and blow-drying by using a nitrogen gun to obtain the substrate.
Optionally, the key determination module is specifically configured to
Testing the resistance value conversion characteristic of the water-soluble memristor array by using a semiconductor electrical parameter analyzer;
acquiring the distribution condition of the threshold voltage of the water-soluble memristor array;
and setting a reference voltage according to the distribution condition of the threshold voltage of the water-soluble memristor array, determining a PUF key, and obtaining the volatile memristor type PUF device.
In a third aspect, the present invention provides a volatile memristive PUF device, which is prepared by the method steps as described in the first aspect above.
In a fourth aspect, the invention provides a PUF cryptographic chip comprising the volatile memristive PUF device of the third aspect.
The invention has the beneficial effects that:
the bottom electrode, the resistance change conversion layer and the top electrode of the volatile memristive PUF device are prepared by using the water-soluble material, and the aqueous solution is used as a trigger environment, so that a convenient supporting condition is provided for practical application, the function self-destruction of the PUF device can be conveniently controlled according to actual requirements, the PUF key safety protection has wide applicability, and the trigger type self-destruction of the PUF device can be realized under the emergency condition. In addition, the hydrolysate of the dissolved material has good biocompatibility and is green and environment-friendly. Furthermore, the graphical preparation of the water-soluble memristor is carried out by adopting a physical mask method, so that the process does not involve any solution corrosion and soaking process, and the process quality of the water-soluble memristor is favorably ensured.
Drawings
Fig. 1 is a schematic flowchart of a method for manufacturing a volatile memristive PUF device according to an embodiment of the present invention;
fig. 2 is a schematic flowchart of another method for manufacturing a volatile memristive PUF device according to an embodiment of the present disclosure;
fig. 3 is a schematic structural diagram of a manufacturing apparatus of a volatile memristive PUF device according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to specific examples, but the embodiments of the present invention are not limited thereto.
The volatile memristive PUF device provided by the embodiment of the invention is applied to the fields of key generation and encryption authentication.
Referring to fig. 1, fig. 1 is a schematic flow chart of a method for manufacturing a volatile memristive PUF device according to an embodiment of the present invention, as shown in fig. 1, where the method of the present embodiment is performed by a manufacturing apparatus of the volatile memristive PUF device. The method provided by the embodiment comprises the following steps:
s101, preparing a bottom electrode on the substrate by using a water-soluble inert metal material.
Wherein, the substrate can be SiO2the/Si substrate can also be a sapphire substrate, and the invention is not limited to the substrate during preparation.
Wherein the substrate has a resistivity of 0.001 to 20000 Ω · cm.
Among them, the water-soluble inert metal material may include, but is not limited to: tungsten (W) or molybdenum (Mo).
And S102, depositing an active metal material on the bottom electrode to obtain a bottom active metal layer.
Among them, the active metal material may include, but is not limited to: silver (Ag) or copper (Cu).
Optionally, the thickness of the deposited active metal material may be 3-5 nm.
S103, preparing a resistance change conversion layer on the bottom active metal layer by using a water-soluble medium material.
Among them, the water-soluble medium material may include, but is not limited to: magnesium oxide (MgO), SiO2Silicon nitride (SiN), or zinc oxide (ZnO).
Optionally, the thickness of the resistive switching layer can be 18-22 nm.
And S104, depositing an active metal material on the resistance change conversion layer in a direction crossed with the bottom electrode to obtain a top active metal layer.
Optionally, the thickness of the deposited active metal material may be 3-5 nm.
S105, preparing a top electrode on the top active metal layer by using a water-soluble inert metal material to obtain the water-soluble memristor array.
Among them, the water-soluble inert metal material may include, but is not limited to: w or Mo.
S106, determining a PUF key according to the threshold voltage distribution condition and the reference voltage of the water-soluble memristor array, and obtaining the volatile memristor type PUF device.
And setting a reference voltage according to the threshold voltage distribution condition of the water-soluble memristor array. And determining the PUF key to obtain the volatile memristive PUF device.
In this embodiment, a water-soluble inert metal material is used to prepare a bottom electrode on a substrate, i.e., the bottom electrode is made of the water-soluble inert metal material. And depositing an active metal material on the bottom electrode to obtain a bottom active metal layer. And preparing a resistance change conversion layer on the bottom active metal layer by using a water-soluble dielectric material, wherein the resistance change conversion layer is the water-soluble dielectric material. And depositing an active metal material on the resistance change conversion layer in a direction crossed with the bottom electrode to obtain a top active metal layer. And (2) preparing a top electrode on the top active metal layer by using a water-soluble inert metal material, namely, the top electrode is made of the water-soluble inert metal material, so as to obtain a cross-shaped water-soluble memristor array, and determining the reference voltage according to the threshold voltage distribution condition of the water-soluble memristor array. And determining a PUF key according to the reference voltage to obtain the volatile memristive PUF device.
In the embodiment, the bottom electrode, the resistance conversion layer and the top electrode of the volatile memristive PUF device are prepared by using the water-soluble material, and the aqueous solution is used as a trigger environment, so that a convenient supporting condition is provided for practical application, the function self-destruction of the volatile memristive PUF device can be conveniently controlled according to practical requirements, the safety protection of a PUF key has wide applicability, and the trigger self-destruction of the PUF device can be realized under the emergency condition. In addition, the hydrolysate of the dissolved material has good biocompatibility and is green and environment-friendly. Furthermore, the graphical preparation of the water-soluble memristor is carried out by adopting a physical mask method, so that the process does not involve any solution corrosion and soaking process, and the process quality of the water-soluble PUF device is favorably ensured. And the bottom electrode and the top electrode are made of the same material, and the bottom active metal layer and the top active metal layer are made of the same material, so that the prepared volatile memristive PUF device is simple in material structure.
On the basis of the above embodiment, further, S101 may be implemented by:
s1011, fixing the first physical mask plate with the line width of 10-50 microns in the shape of a strip array on the substrate.
S1012, preparing a water-soluble inert metal material with the thickness of 45-50 nanometers on the substrate by adopting magnetron sputtering to obtain a bottom electrode.
On the basis of the above embodiment, further, S102 may be implemented by:
and S1021, depositing 3-5 nm of active metal materials on the bottom electrode through magnetron sputtering to obtain a bottom active metal layer.
On the basis of the above embodiment, further, S103 may be implemented by:
and S1031, replacing the first physical mask plate with a square array cross point mask plate.
And the square array cross point mask is aligned and attached to the bottom active metal layer.
S1032, depositing a water-soluble medium material with the thickness of 18-22 nanometers on the bottom active metal layer to obtain the resistive switching layer.
On the basis of the above embodiment, further, S104 may be implemented by:
s1041, replacing the square array cross point mask plate with a strip array-shaped second physical mask plate.
The second physical mask plate is aligned and attached to the resistance change conversion layer in a crossed direction with the bottom electrode, and the line width of the second physical mask plate is the same as that of the first physical mask plate.
S1042, depositing an active metal material with the thickness of 3-5 nanometers on the resistance change layer by adopting magnetron sputtering to obtain a top active metal layer.
On the basis of the above embodiment, further, S105 may be implemented by:
s1051, preparing a water-soluble inert metal material with the thickness of 45-50 nanometers on the top active metal layer by adopting magnetron sputtering, and obtaining the water-soluble memristor array.
On the basis of the above embodiment, further, before executing S101, the following steps may be executed:
s100, obtaining the substrate.
S100 may be implemented by:
s1001, cleaning an initial substrate;
s1002, carrying out ultrasonic treatment on the cleaned substrate by using acetone and isopropanol respectively to obtain an ultrasonic treated substrate;
s1003, washing the substrate subjected to ultrasonic treatment by using deionized water, and drying by using a nitrogen gun to obtain the substrate.
On the basis of the above embodiment, further, executing S106 may be implemented by:
s1061, testing the resistance conversion characteristic of the water-soluble memristor array by using a semiconductor electrical parameter analyzer;
s1062, obtaining distribution conditions of threshold voltages of the water-soluble memristor array.
S1063, setting a reference voltage according to the distribution condition of the threshold voltage of the water-soluble memristor array, determining a PUF key, and obtaining the volatile memristive PUF device.
If the threshold voltage of the water-soluble memristor array is less than or equal to the reference voltage, the threshold voltage is marked as 1. And if the threshold voltage of the water-soluble memristor array is larger than the reference voltage, marking as 0, and thus obtaining the PUF key.
Optionally, the reference voltage is preferably selected to realize a high-randomness PUF, that is, the occurrence probability of 1 and 0 is 50%.
On the basis of the above embodiment, further, after executing S106, the following steps may be executed:
s107, soaking the volatile memristor PUF device in the solution, and blowing the volatile memristor PUF device to be dry by using a nitrogen gun every 30-60 seconds.
And S108, acquiring the threshold voltage of the volatile memristor type PUF device in different dissolution stages by using a semiconductor electrical parameter analyzer, and acquiring the PUF key again by combining with the reference voltage.
And when the on-chip Hamming distance of the PUF device is not 0 any more, the PUF key is changed, and the trigger type invalidation is completed.
The following describes a manufacturing method provided by an embodiment of the present invention with reference to fig. 2 by taking a sample wafer for manufacturing a volatile memristive PUF device as an example.
Referring to fig. 2, fig. 2 is a schematic flow chart of a method for manufacturing another volatile memristive PUF device according to an embodiment of the present invention, as shown in fig. 2, the method provided in this embodiment includes the following steps:
s200, selecting and cleaning a high-resistance substrate, respectively performing ultrasonic treatment on acetone and isopropanol for 4-5 minutes, then washing with deionized water for 2-3 minutes, and drying with a nitrogen gun.
Wherein S200 corresponds to S100 in the above embodiment.
S201, depositing an inert bottom electrode.
Fixing a strip-shaped array physical mask plate with the line width of 10-50 microns on a high-resistance substrate by using an adhesive tape, and preparing a water-soluble inert bottom electrode with the thickness of 45-50 nanometers on a sample wafer by adopting magnetron sputtering.
Wherein S201 corresponds to S101 in the above-described embodiment.
S202, depositing bottom layer active metal.
And sputtering and depositing 3-5 nm of active metal to obtain a bottom active metal layer.
Wherein S202 corresponds to S102 in the above embodiment.
S203, depositing a water-soluble medium.
And taking down the top electrode mask fixed on the sample wafer, aligning and attaching the square array cross point mask on the sample wafer by using the adhesive tape again, depositing a water-soluble resistance change conversion layer material with the thickness of 18-22 nanometers on the sample wafer, and taking down the square array cross point mask.
Wherein S203 corresponds to S103 in the above embodiment.
And S204, depositing a top layer active metal.
And aligning and attaching a top electrode strip array-shaped physical mask plate which is crossed with the bottom electrode on the sample by using a thin adhesive tape, and preparing an active metal material with the thickness of 3-5 nanometers on the sample by adopting magnetron sputtering to obtain a top active metal layer.
Wherein S204 corresponds to S104 in the above embodiment.
S205, depositing an inert top electrode to obtain the water-soluble memristor array.
And sputtering and depositing a water-soluble inert top electrode with the thickness of 45-50 nanometers, and taking down the sample wafer from the tray after the process is finished.
Wherein S205 corresponds to S105 in the above embodiment.
And S206, electrically testing and determining the reference voltage.
And testing the resistance conversion characteristic of the water-soluble memristor array on the sample wafer by using a semiconductor electrical parameter analyzer, and counting the distribution condition of the threshold voltage.
And S207, generating a PUF key.
Setting a reference voltage, recording as 1 if the threshold voltage of the water-soluble memristor array is smaller than or equal to the reference voltage, and recording as 0 if the threshold voltage of the water-soluble memristor array is larger than the reference voltage, so as to generate a PUF key based on the water-soluble memristor array, and obtain the volatile memristive PUF device.
Wherein S206 and S207 correspond to S106 in the above-described embodiment.
Further, after step S207, the following steps are also included:
and S208, soaking the volatile memristor type PUF device in the solution.
The sample wafer is soaked in the solution, a nitrogen gun is used for drying the sample wafer every 30-60 seconds, then a semiconductor electrical parameter analyzer is used for obtaining the threshold voltage of the memristor array, and the memristor type PUF secret key is obtained again by combining with the reference voltage.
And when the Hamming distance in the chip of the PUF is not 0 any more, the PUF key is changed, and the trigger type invalidation is completed.
Wherein S208 corresponds to S107 and S108 in the above-described embodiment.
The method of the present invention will be described below by taking 4 groups of metals of different materials as an example to fabricate a volatile memristive PUF device. In the present invention, a volatile memristive PUF device is also referred to as a PUF device.
Example 1: the volatile memristive PUF device is constructed by adopting water-soluble materials MgO and W and taking Ag as an active component.
Step 11, in SiO2And preparing a patterned composite bottom electrode W/Ag of the water-soluble memristor array on the/Si high-resistance substrate.
Wherein, step 11 may comprise the following steps 11 a-11 c:
step 11a, use of SiO2the/Si high-resistance substrate was cleaned by sonication for 5 minutes each with acetone and isopropanol, followed by 3 minutes of deionized water rinsing and blow drying with a nitrogen gun.
Step 11b, using adhesive tape to make the strip array with the line width of 10 micronsPhysical mask plate fixed on SiO2On the/Si high-resistance substrate, a bottom electrode material W with the thickness of 50 nanometers is deposited on the sample wafer at room temperature by magnetron sputtering, as shown in S201 in FIG. 2.
And 11c, continuing to deposit the active metal Ag with the thickness of about 4 nanometers by using magnetron sputtering, and finishing the preparation of the graphical composite bottom electrode, as shown in S202 in figure 2.
Step 12, in SiO2And finishing the preparation of a W/Ag/MgO/Ag/W array of the water-soluble memristor and a direct current test on the/Si high-resistance substrate.
Wherein step 12 may comprise the following steps 12 a-12 c:
step 12a, SiO2Taking down a physical mask fixed on the/Si substrate, aligning and attaching a 10 micron × 10 micron square array cross point mask on the sample, preparing a 20 nanometer thick water-soluble dielectric material MgO on the sample by using magnetron sputtering, and taking down the 10 micron × 10 micron square array cross point mask. As shown at S203 in fig. 2.
And step 12b, aligning and attaching a strip-shaped array physical mask which is in a cross direction with the bottom electrode and has a line width of 10 microns to the sample by using an adhesive tape, and depositing active metal Ag with the thickness of 4 nanometers on the sample by adopting magnetron sputtering, as shown in S204 in figure 2.
Further, the top electrode W with a thickness of 50 nm is deposited continuously by magnetron sputtering, and the preparation of the water-soluble volatile memristor (here, the water-soluble memristor array) is completed, as shown in fig. 2 at S205.
And step 12c, testing the threshold conversion characteristic of the water-soluble memristor array on the sample wafer by using a semiconductor electrical parameter analyzer, and counting the threshold voltage distribution in the water-soluble memristor array, as shown in S206 in FIG. 2.
And step 13, triggering the PUF function to be failed in the solution environment.
Wherein, step 13 may comprise the following steps 13 a-13 c:
step 13a, setting a reference voltage, recording as 1 if the threshold voltage of the device is less than or equal to the reference voltage, recording as 0 if the device cannot generate resistance state conversion when the applied voltage is greater than the reference voltage, so that a PUF key is generated, and obtaining a volatile memristive PUF device (hereinafter referred to as a PUF device), as shown in S207 in fig. 2.
And step 13b, soaking the sample wafer in deionized water at room temperature, blowing the sample wafer by using a nitrogen gun every 30 seconds, then respectively testing the current-voltage characteristics of the water-soluble memristor array by using a semiconductor electrical parameter analyzer to obtain a voltage value of the water-soluble memristor array subjected to threshold conversion, and comparing the voltage value with a reference voltage to obtain a real-time PUF key.
In this example, deionized water was chosen as the trigger environment, but not limited to this solution.
Step 13c, when the on-chip Hamming Distance (HD) of the PUF deviceintra) No longer 0, the PUF key changes, completing the triggered failure, as shown at S208 in fig. 2.
Wherein the in-chip Hamming Distance (HD)intra) This can be obtained by equation (1):
wherein, HDintraIs the in-chip Hamming distance, R0For the output response of a PUF device under standard test conditions, RlThe PUF device is subjected to the first sampling under the action of external factors to obtain an output result.
Example 2: adopts water-soluble material SiO2And W, and Cu is used as an active component to construct the volatile memristive PUF device.
Step 21, in SiO2And preparing a patterned bottom electrode W/Cu of the water-soluble memristor array on the/Si high-resistance substrate.
Wherein, step 21 may comprise the following steps 21 a-21 c:
step 21a, use of SiO2And cleaning the/Si high-resistance substrate by using acetone and isopropanol respectively and performing ultrasonic treatment for 5 minutes. Followed by rinsing with deionized water. And drying by using a nitrogen gun.
Step 21b, using a thin adhesive tape to physically arrange the strip-shaped array with the line width of 20 micronsMask plate is fixed on SiO2On the/Si high-resistance substrate, a bottom electrode material W with the thickness of 45 nanometers is deposited on the sample wafer at room temperature by magnetron sputtering, as shown in S201 in FIG. 2.
And step 21c, continuing to deposit the active metal Cu with the thickness of about 5 nanometers by using magnetron sputtering, and finishing the preparation of the graphical composite bottom electrode, as shown in S202 in figure 2.
Step 22, in SiO2Water-soluble memristor W/Cu/SiO completed on/Si high-resistance substrate2Preparation of a/Cu/W array and direct current test.
Wherein step 22 may comprise the following steps 22 a-22 c:
step 22a, SiO2Taking down a physical mask fixed on a Si substrate, aligning and attaching a square array cross point mask of 20 micrometers multiplied by 20 micrometers on a sample, and preparing a water-soluble dielectric material SiO with the thickness of 22 nanometers on the sample by using electron beam evaporation2And the 20 micron by 20 micron square array cross point reticle is removed as shown at S203 in fig. 2.
And step 22b, aligning and attaching a strip-shaped array top electrode physical mask plate which is in a cross direction with the bottom electrode and has a line width of 20 microns to the sample by using a thin adhesive tape, and depositing 5-nanometer-thick active metal Cu on the sample by adopting magnetron sputtering, as shown in S204 in figure 2.
The magnetron sputtering is used to continuously deposit the top electrode W with the thickness of 45 nanometers, and the preparation of the water-soluble volatile memristor array is completed as shown by S205 in fig. 2.
And step 22c, testing the threshold conversion characteristic of the water-soluble memristor array on the sample wafer by using a semiconductor electrical parameter analyzer, and counting the threshold voltage distribution in the water-soluble memristor array, as shown in S206 in fig. 2.
And 23, triggering the PUF function to be failed in the solution environment.
Wherein, step 23 may include the following steps 23 a-23 c:
step 23a, setting a reference voltage, if the threshold voltage of the device is less than or equal to the reference voltage, marking as 1, if the device is not subjected to resistance state transition when the applied voltage is greater than the reference voltage, marking as 0, so that the PUF key is generated, as shown in S207 in fig. 2.
And step 23b, soaking the sample wafer in a phosphate buffer solution, blowing the sample wafer by using a nitrogen gun every 40 seconds, then testing the current-voltage characteristic of the device by using a semiconductor electrical parameter analyzer to obtain a voltage value of the water-soluble memristor array subjected to threshold conversion, and comparing the voltage value with a reference voltage to obtain a real-time PUF key.
Phosphate buffer was chosen as the trigger environment in this example, but is not limited to this solution.
Wherein, the main components of the phosphate buffer solution comprise: sodium dihydrogen phosphate, disodium hydrogen phosphate and sodium chloride, the concentration is 0.01mol/L, and the pH value is about 7.2-7.4.
Step 23c, when the on-chip hamming distance of the PUF device is no longer 0, the PUF key changes, and the triggered invalidation is completed, as shown in S208 in fig. 2. Wherein the hamming distance in the chip can be obtained by formula (1).
Example 3: water-soluble materials SiN and Mo are adopted, and Ag is used as an active component to construct the volatile memristive PUF device.
And 31, preparing a patterned bottom electrode Mo/Ag of the water-soluble memristor on the sapphire substrate.
Wherein step 31 may comprise the following steps 31 a-31 c:
and 31a, selecting and cleaning a sapphire high-resistance substrate, respectively carrying out ultrasonic treatment for 5 minutes by using acetone and isopropanol, then washing with deionized water, and blow-drying by using a nitrogen gun.
And 31b, fixing a strip array physical mask plate with the line width of 30 microns on the sapphire substrate by using a thin adhesive tape, and depositing a bottom electrode material Mo with the thickness of 50 nanometers on the sample wafer at room temperature by adopting magnetron sputtering, as shown in S201 in figure 2.
And step 31c, continuing to deposit the active metal Ag with the thickness of about 4 nanometers by using magnetron sputtering, and completing the preparation of the graphical composite bottom electrode, as shown in S202 in figure 2.
And step 32, finishing the preparation of the water-soluble memristor Mo/Ag/SiN/Ag/Mo array and direct-current testing on the sapphire substrate.
Wherein step 32 may include steps 32 a-32 c as follows:
step 32a, taking down the physical mask fixed on the sapphire substrate, aligning and attaching a square array electrode cross point mask of 30 micrometers × 30 micrometers on the sample, preparing a water-soluble dielectric material SiN with a thickness of 20 nanometers on the sample by using a plasma enhanced chemical vapor deposition method, and taking down the mask, as shown in S203 in FIG. 2.
And 32b, aligning and attaching a strip-shaped array top electrode physical mask plate which is in a cross direction with the bottom electrode and has a line width of 30 microns to the sample by using a thin adhesive tape, and depositing active metal Ag with the thickness of 4 nanometers on the sample by adopting magnetron sputtering, as shown in S204 in figure 2.
The top electrode Mo with the thickness of 50 nanometers is continuously deposited by using magnetron sputtering, and the preparation of the volatile water-soluble memristor Mo/Ag/SiN/Ag/Mo is completed, as shown in S205 in FIG. 2.
And 32c, testing the threshold conversion characteristic of the water-soluble memristor array on the sample wafer by using a semiconductor electrical parameter analyzer, and counting the threshold voltage distribution in the device array, as shown in S206 in FIG. 2.
Step 33, triggering a functional failure of the PUF in deionized water.
Wherein step 33 may comprise the following steps 33 a-33 c:
step 33a, setting a reference voltage, if the threshold voltage of the water-soluble memristor is less than or equal to the reference voltage, marking as 1, if the external voltage of the water-soluble memristor is greater than the reference voltage, the resistance state conversion still cannot occur, marking as 0, and generating a PUF key, as shown in S207 in fig. 2.
And step 33b, soaking the sample wafer in deionized water, blowing the sample wafer by using a nitrogen gun every 60 seconds, then testing the current-voltage characteristic of the device by using a semiconductor electrical parameter analyzer, obtaining a voltage value of the water-soluble memristor subjected to threshold conversion, and comparing the voltage value with a reference voltage to obtain a real-time PUF key.
Deionized water was chosen as the trigger environment in this example, but is not limited to this solution.
Step 33c, when the on-chip hamming distance of the PUF device is no longer 0, the PUF key changes, and the triggered invalidation is completed, as shown in S208 in fig. 2. Wherein the hamming distance in the chip can be obtained by formula (1).
Example 4 a volatile memristive PUF device is constructed with water-soluble materials ZnO and Mo and Cu as the active component.
And 41, preparing a patterned bottom electrode Mo/Cu of the water-soluble memristor array on the sapphire substrate.
Wherein, step 41 may include the following steps 41 a-41 c:
step 41a, selecting and cleaning a sapphire high-resistance substrate, respectively performing ultrasonic treatment on the sapphire high-resistance substrate for 5 minutes by using acetone and isopropanol, then washing the sapphire high-resistance substrate by using deionized water, and drying the sapphire high-resistance substrate by using a nitrogen gun;
and 41b, fixing a strip array physical mask plate with the line width of 50 microns on the sapphire substrate by using a thin adhesive tape, and depositing a bottom electrode material Mo with the thickness of 45 nanometers on the sample wafer at room temperature by adopting magnetron sputtering, as shown in S201 in figure 2.
And 41c, continuing to deposit the active metal Cu with the thickness of about 3 nanometers by using magnetron sputtering, and finishing the preparation of the graphical composite bottom electrode, as shown in S202 in figure 2.
And 42, completing preparation and direct-current test of a water-soluble volatile memristor Mo/Cu/ZnO/Cu/Mo array on the sapphire substrate.
Wherein step 42 may include steps 42 a-42 c as follows:
42a, taking down the physical mask fixed on the sapphire substrate, aligning and attaching a square array cross point mask of 50 micrometers by 50 micrometers to the sample, preparing a water-soluble dielectric material ZnO with the thickness of 18 nanometers on the sample by magnetron sputtering, and taking down the mask, as shown in S203 in FIG. 2.
And 42b, aligning and attaching a strip-shaped array top electrode physical mask plate which is in a cross direction with the bottom electrode and has the line width of 50 microns to the sample by using a thin adhesive tape, and depositing 3-nanometer-thick active metal Cu on the sample by adopting magnetron sputtering, as shown in S204 in figure 2.
The magnetron sputtering is used to continuously deposit the top electrode Mo with the thickness of 45 nanometers, and the preparation of the volatile water-soluble memristor Mo/Cu/ZnO/Cu/Mo is completed, as shown in S205 in FIG. 2.
And 42c, testing the threshold conversion characteristic of the water-soluble memristor array on the sample wafer by using the semiconductor electrical parameter analyzer, and counting the threshold voltage distribution in the water-soluble memristor array, as shown in S206 in FIG. 2.
Step 43, triggering the functional failure of the PUF in phosphate buffer.
Wherein step 43 may comprise the following steps 43 a-43 c:
step 43a, setting a reference voltage, if the threshold voltage of the water-soluble memristor is less than or equal to the reference voltage, marking as 1, if the external voltage of the water-soluble memristor is greater than the reference voltage, the resistance state conversion still cannot occur, marking as 0, and generating a PUF key, as shown in S207 in fig. 2.
And 43b, soaking the sample wafer in a phosphate buffer solution, blowing the sample wafer by using a nitrogen gun every 30 seconds, then testing the current-voltage characteristic of the memristor by using a semiconductor electrical parameter analyzer to obtain a voltage value of the water-soluble memristor subjected to threshold conversion, and comparing the voltage value with a reference voltage to obtain a real-time PUF key.
Phosphate buffer was chosen as the trigger environment in this example, but is not limited to this solution. Wherein the phosphate buffer is the same as in step 23 b.
Step 43c, when the on-chip hamming distance of the PUF device is no longer 0, the PUF key changes, and the triggered invalidation is completed, as shown in S208 in fig. 2. Wherein the hamming distance in the chip can be obtained by formula (1).
Fig. 3 is a schematic structural diagram of a device for manufacturing a volatile memristive PUF device according to an embodiment of the present invention, as shown in fig. 3, the device according to the embodiment includes:
a bottom electrode preparation module 301 for preparing a bottom electrode on a substrate using a water-soluble inert metal material;
an active metal layer preparation module 302, configured to deposit an active metal material on the bottom electrode to obtain a bottom active metal layer;
the resistive switching layer preparation module 303 is used for preparing a resistive switching layer on the bottom active metal layer by using a water-soluble dielectric material;
the active metal layer preparation module 302 is further configured to deposit an active metal material on the resistive switching layer in a direction crossing the bottom electrode to obtain a top active metal layer;
a top electrode preparation module 304, configured to prepare a top electrode on the top active metal layer using a water-soluble inert metal material, so as to obtain a water-soluble memristor array;
and the key determining module 305 is configured to determine a PUF key according to the threshold voltage distribution condition and the reference voltage of the water-soluble memristor array, so as to obtain a volatile memristive PUF device.
Optionally, the bottom electrode preparation module 301 is specifically configured to:
fixing a first strip-shaped array physical mask with the line width of 10-50 microns on a substrate;
and preparing a water-soluble inert metal material with the thickness of 45-50 nanometers on the substrate by adopting magnetron sputtering to obtain the bottom electrode.
Optionally, the active metal layer preparation module 302 is specifically configured to:
depositing 3-5 nm of active metal material on the bottom electrode through magnetron sputtering to obtain a bottom active metal layer.
Optionally, the resistive switching layer preparation module 303 is specifically configured to:
replacing the first physical mask plate with a square array cross point mask plate, and aligning and attaching the square array cross point mask plate to the bottom active metal layer;
and depositing a water-soluble medium material with the thickness of 18-22 nanometers on the bottom active metal layer to obtain the resistive switching layer.
Optionally, the active metal layer preparation module 302 is specifically configured to:
replacing the square array cross point mask plate with a strip array-shaped second physical mask plate, aligning the square array cross point mask plate with the bottom electrode in a cross direction, and attaching the square array cross point mask plate and the bottom electrode on the resistance change layer, wherein the line width of the second physical mask plate is the same as the line width of the first physical mask plate;
depositing an active metal material with the thickness of 3-5 nanometers on the resistance change layer by adopting magnetron sputtering to obtain a top active metal layer;
the top electrode preparation module 304 is specifically configured to:
and preparing a water-soluble inert metal material with the thickness of 45-50 nanometers on the top active metal layer by adopting magnetron sputtering to obtain the water-soluble memristor array.
Optionally, the apparatus further comprises:
the substrate preparation module is used for cleaning an initial substrate; carrying out ultrasonic treatment on the cleaned substrate by using acetone and isopropanol respectively to obtain an ultrasonic treated substrate; and washing the substrate subjected to ultrasonic treatment by using deionized water, and blow-drying by using a nitrogen gun to obtain the substrate.
Optionally, the key determination module 305 is specifically configured to
Testing the resistance value conversion characteristic of the water-soluble memristor array by using a semiconductor electrical parameter analyzer;
acquiring the distribution condition of the threshold voltage of the water-soluble memristor array;
and setting a reference voltage according to the distribution condition of the threshold voltage of the water-soluble memristor array, determining a PUF key, and obtaining the volatile memristor type PUF device.
The apparatus of the foregoing embodiment may be configured to implement the technical solution of the foregoing method embodiment, and the implementation principle and the technical effect are similar, which are not described herein again.
The embodiment of the invention provides a volatile memristive PUF device which is prepared through the steps of the method of the embodiment.
The embodiment of the invention provides a PUF (physical unclonable function) encryption chip which comprises the volatile memristive PUF device.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like, indicate orientations and positional relationships based on those shown in the drawings, and are used only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be considered as limiting the present invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the present invention, unless otherwise expressly stated or limited, "above" or "below" a first feature means that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact with each other via another feature therebetween. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples described in this specification can be combined and combined by those skilled in the art.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.
Claims (10)
1. A method for manufacturing a volatile memristive PUF device is characterized by comprising the following steps:
preparing a bottom electrode on a substrate by using a water-soluble inert metal material;
depositing an active metal material on the bottom electrode to obtain a bottom active metal layer;
preparing a resistance change conversion layer on the bottom active metal layer by using a water-soluble medium material;
depositing the active metal material on the resistance change layer in a direction crossing the bottom electrode to obtain a top active metal layer;
preparing a top electrode on the top active metal layer by using the water-soluble inert metal material to obtain a water-soluble memristor array;
setting a reference voltage according to the threshold voltage distribution condition of the water-soluble memristor array; and determining a physical anti-cloning function (PUF) key to obtain the volatile memristive PUF device.
2. The method of claim 1, wherein preparing a bottom electrode on a substrate using a water-soluble inert metal material comprises:
fixing a first strip-shaped array physical mask with the line width of 10-50 microns on the substrate;
and preparing a water-soluble inert metal material with the thickness of 45-50 nanometers on the substrate by adopting magnetron sputtering to obtain the bottom electrode.
3. The method of claim 2, wherein depositing an active metal material on the bottom electrode resulting in an underlying active metal layer comprises:
depositing 3-5 nm of active metal material on the bottom electrode through magnetron sputtering to obtain a bottom active metal layer.
4. The method according to claim 3, wherein the preparing a resistive switching layer on the underlying active metal layer using an aqueous medium material comprises:
replacing the first physical mask plate with a square array cross point mask plate, and aligning and attaching the square array cross point mask plate on the bottom active metal layer;
and depositing a water-soluble medium material with the thickness of 18-22 nanometers on the bottom active metal layer to obtain the resistive switching layer.
5. The method of claim 4, wherein depositing the active metal material on the resistive switching layer in a direction crossing the bottom electrode to obtain a top active metal layer comprises:
replacing the square array cross point mask plate with a strip-shaped array-shaped second physical mask plate, aligning and attaching the second physical mask plate and the bottom electrode on the resistive switching layer in a cross direction, wherein the line width of the second physical mask plate is the same as the line width of the first physical mask plate;
depositing an active metal material with the thickness of 3-5 nanometers on the resistance change layer by adopting magnetron sputtering to obtain a top active metal layer;
preparing a top electrode on the top active metal layer by using a water-soluble inert metal material to obtain a water-soluble memristor array, wherein the preparation method comprises the following steps:
and preparing the water-soluble inert metal material with the thickness of 45-50 nanometers on the top active metal layer by adopting magnetron sputtering to obtain the water-soluble memristor array.
6. The method according to any one of claims 1 to 5, wherein before preparing the bottom electrode on the substrate using the water-soluble inert metal material, the method further comprises:
cleaning the initial substrate;
carrying out ultrasonic treatment on the cleaned substrate by using acetone and isopropanol respectively to obtain an ultrasonically treated substrate;
and washing the substrate subjected to ultrasonic treatment by using deionized water, and blow-drying by using a nitrogen gun to obtain the substrate.
7. The method according to any one of claims 1-5, wherein determining the PUF key according to the threshold voltage distribution of the water-soluble memristor array and a reference voltage to obtain a volatile memristive PUF device comprises:
testing the resistance value conversion characteristic of the water-soluble memristor array by using a semiconductor electrical parameter analyzer;
acquiring the distribution condition of the threshold voltage of the water-soluble memristor array;
and setting a reference voltage according to the distribution condition of the threshold voltage of the water-soluble memristor array, and determining a PUF key to obtain the volatile memristor type PUF device.
8. A preparation apparatus of a volatile memristive PUF device is characterized by comprising:
a bottom electrode preparation module for preparing a bottom electrode on a substrate using a water-soluble inert metal material;
the active metal layer preparation module is used for depositing an active metal material on the bottom electrode to obtain a bottom active metal layer;
the resistive switching layer preparation module is used for preparing a resistive switching layer on the bottom active metal layer by using a water-soluble dielectric material;
the active metal layer preparation module is also used for depositing an active metal material on the resistance change layer in a direction which is crossed with the bottom electrode to obtain a top active metal layer;
the top electrode preparation module is used for preparing a top electrode on the top active metal layer by using a water-soluble inert metal material to obtain a water-soluble memristor array;
the key determining module is used for setting a reference voltage according to the threshold voltage distribution condition of the water-soluble memristor array; and determining the PUF key to obtain the volatile memristive PUF device.
9. A volatile memristive PUF device, characterized in that it is produced by the method steps of any one of claims 1 to 7.
10. A PUF cryptographic chip, characterized in that said chip comprises a volatile memristive PUF device according to claim 9.
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