CN113820775A - 滤光片及其制备方法 - Google Patents

滤光片及其制备方法 Download PDF

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CN113820775A
CN113820775A CN202111223221.1A CN202111223221A CN113820775A CN 113820775 A CN113820775 A CN 113820775A CN 202111223221 A CN202111223221 A CN 202111223221A CN 113820775 A CN113820775 A CN 113820775A
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oxide
hydride
film
nitride
optical filter
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方叶庆
贺倩倩
马科
郭景朝
张见宝
丁维红
杨伟
彭流洋
霍恒
郭景劭
董文瑞
李云
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Xinyang Sunny Optics Co Ltd
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Xinyang Sunny Optics Co Ltd
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Priority to PCT/CN2022/089447 priority patent/WO2023065627A1/zh
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Abstract

本发明涉及一种滤光片及其制备方法，滤光片包括基板(1)以及设置在所述基板(1)两侧的带通膜(2)和增透膜(3)，所述带通膜(2)和所述增透膜(3)均由高、低折射率膜层交替排列形成；所述滤光片在0°‑50°入射角度下，1000nm‑2000nm波段内的透过率在95％以上。本发明的滤光片能实现在1000nm‑2000nm波段内，0°‑50°入射角度下的高透过率。

Description

滤光片及其制备方法
技术领域
本发明涉及一种滤光片及其制备方法。
背景技术
随着科技的发展，激光探测技术在距离探测、生物识别以及各类工业生产中被广泛应用。因此，对于激光抗干扰能力的要求也越来越高。根据激光探测原理，随着激光探测波长的红移，激光的抗干扰能力可以得到有效的改善。但是，现有技术中，在940nm波段附近的红外激光产品还无法满足高抗干扰能力的要求。另外，激光波段的长移势必会导致膜厚的增大，进而会导致膜层存在更大的应力，使得镜片表面容易产生畸变。而光线经过畸变的表面后会出现反射损失，反射损失的能量值与面型畸变量关系密切，即畸变量越大，则能量损失越严重，因此会严重降低产品的透过率。可见，现有技术存在的上述缺陷对波长更长的红外激光产品提出了更高的要求。
发明内容
本发明的目的在于提供一种滤光片及其制备方法。
为实现上述发明目的，本发明提供一种滤光片及其制备方法，滤光片包括基板以及设置在所述基板两侧的带通膜和增透膜，所述带通膜和所述增透膜均由高、低折射率膜层交替排列形成。
根据本发明的一个方面，所述高折射率膜层的材料折射率在2.0以上，所述低折射率膜层的材料折射率在2.0以下。
根据本发明的一个方面，所述带通膜中的高折射率膜层的材料包括氧化锗、氧化钛、氧化铌、氧化钽、氧化镧、氢化硅、氢化钛、氢化锗、氢化铌、氢化钽、氢化镧、氮化硅、氮化锗、氮化钛、氮化铌、氮化钽、氮化镧、氢氮化硅、氢氮化锗、氢氮化钛、氢氮化铌、氢氮化钽、氢氮化镧；
所述带通膜中的低折射率膜层的材料包括氧化硅、氟化镁、冰晶石。
根据本发明的一个方面，所述增透膜中的高折射率膜层的材料包括氧化钛、氧化铌、氧化钽、氧化镧、氧化铪、氧化锆、氧化锗；
所述增透膜中的低折射率膜层的材料包括氧化铝、氧化镁、氧化硅、氟化镁、氟化镧、氟化铝。
根据本发明的一个方面，所述带通膜的厚度在10000nm-20000nm之间，所述增透膜的厚度在10000nm-20000nm之间。
根据本发明的一个方面，所述带通膜的厚度与所述增透膜的厚度的比例在1:1至1:1.8之间。
根据本发明的一个方面，所述带通膜具有15-30对高、低折射率膜层；
所述增透膜具有20-50对高、低折射率膜层。
根据本发明的一个方面，所述滤光片在0°-50°入射角度下，1000nm-2000nm波段内的透过率在95％以上。
根据本发明的一个方面，所述滤光片的表面PV值在直径17mm内小于20微米。
用于制备滤光片的方法，在基板上依次镀制带通膜和增透膜，且所述增透膜在150℃以上的环境下镀制，首层必须为二氧化硅材料，镀膜离子源功率比其余层二氧化硅高，为其余层的1.5倍；镀膜速率比其余二氧化硅层低，约为其余层的0.8倍。
根据本发明的构思，通过对镀膜材料以及膜层厚度的合理选取，使得滤光片在1000nm-2000nm波段内，0°-50°范围内的大角度入射下能实现高透过率。并且，可以保证镜片表面面型在直径17mm范围内的PV值小于20微米。
根据本发明的方案，使带通膜的厚度与增透膜的厚度的比例满足一定关系，从而可以更好的实现应力平衡。
根据本发明的方案，在制作滤光片时，先镀制应力较大的带通膜，再镀制增透膜，并且在高温环境下进行增透膜的镀制，从而可以有效的消除膜层的应力。
附图说明
图1示意性表示本发明的一种实施方式的滤光片的结构图；
图2示意性表示本发明的一种实施方式的滤光片在1300nm波段的光谱图；
图3示意性表示本发明的一种实施方式的滤光片在1550nm波段的光谱图；
图4示意性表示本发明的一种实施方式的滤光片在1800nm波段的光谱图。
具体实施方式
为了更清楚地说明本发明实施方式或现有技术中的技术方案，下面将对实施方式中所需要使用的附图作简单地介绍。显而易见地，下面描述中的附图仅仅是本发明的一些实施方式，对于本领域普通技术人员而言，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
在针对本发明的实施方式进行描述时，术语“纵向”、“横向”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”“内”、“外”所表达的方位或位置关系是基于相关附图所示的方位或位置关系，其仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此上述术语不能理解为对本发明的限制。
下面结合附图和具体实施方式对本发明作详细地描述，实施方式不能在此一一赘述，但本发明的实施方式并不因此限定于以下实施方式。
参见图1，本发明的(带通)滤光片，包括基板1以及设置在基板1两侧的带通膜2和增透膜3，带通膜2和增透膜3均由高、低折射率膜层交替排列形成。其中，高折射率膜层的材料折射率在2.0以上，低折射率膜层的材料折射率在2.0以下。本发明中，带通膜2具有15-30对高、低折射率膜层，增透膜3具有20-50对高、低折射率膜层。
本发明中，带通膜2中的高折射率膜层的材料可以为金属、半导体及其全部或部分氧化物、氮化物、氢化物、氢氧化物以及氮氧化物。例如，氧化锗、氧化钛、氧化铌、氧化钽、氧化镧、氢化硅、氢化钛、氢化锗、氢化铌、氢化钽、氢化镧、氮化硅、氮化锗、氮化钛、氮化铌、氮化钽、氮化镧、氢氮化硅、氢氮化锗、氢氮化钛、氢氮化铌、氢氮化钽、氢氮化镧中的一种或几种混合物(例如氧化钛与氧化镧的混合物、氧化镧与氧化铝的混合物)。带通膜2中的低折射率膜层的材料包括氧化硅、氟化镁、冰晶石中的一种或几种混合物。由此，这些材料的选择可以使滤光片实现在一定波段内大角度入射下的高透过率。
增透膜3中的高折射率膜层的材料为金属氧化物，例如，氧化钛、氧化铌、氧化钽、氧化镧、氧化铪、氧化锆、氧化锗中的一种或几种混合物。增透膜3中的低折射率膜层的材料包括氧化铝、氧化镁、氧化硅、氟化镁、氟化镧、氟化铝中的一种或几种混合物。同时，低折射率膜层的上述材料也可以与高折射率膜层的材料混合成其他混合物。
当然，带通膜2和增透膜3中，高折射率膜层和低折射率膜层的材料不限于上述中的一种，还可以选择多种材料的膜层搭配形成各个膜系。
本发明中，带通膜2的厚度在10000nm-20000nm之间，增透膜3的厚度在10000nm-20000nm之间。并且，随着增透膜3的膜层加厚，基板1两侧的膜层的应力也会逐渐保持相对平衡。因此，本发明将带通膜2的厚度与增透膜3的厚度的比例设置在1:1至1:1.8之间，从而实现应力的平衡。
以下以三种不同波段的实施方式来详细描述本发明的滤光片：
第一种实施方式
结合图2，本实施方式的滤光片中的带通膜2和增透膜3的组成如下表1所示：
Figure BDA0003313396020000051
Figure BDA0003313396020000061
Figure BDA0003313396020000071
表1
第二种实施方式
结合图3，本实施方式的滤光片中的带通膜2和增透膜3的组成如下表2所示：
Figure BDA0003313396020000072
Figure BDA0003313396020000081
Figure BDA0003313396020000091
表2
第三种实施方式
结合图4，本实施方式的滤光片中的带通膜2和增透膜3的组成如下表3所示：
Figure BDA0003313396020000092
Figure BDA0003313396020000101
表3
本发明的滤光片的制备方法中，首先在基板1的一侧镀制带通膜2，然后再在基板1的另一侧镀制增透膜3。并且，在镀制增透膜3时应在150℃以上的高温环境下进行，从而在镀制增透膜3时可以同时对已成膜的带通膜2进行高温烘烤以释放应力，并能利用增透膜3的应力逐渐对带通膜2进行应力平衡。并且，在镀制时首层需为二氧化硅材料，且其镀膜离子源功率应高于其余层二氧化硅约1.5倍，镀膜速率则低于其余二氧化硅层约0.8倍。
满足上述设置，可以使得滤光片实现在0°-50°入射角度下，1000nm-2000nm近红外的任意波段内的透过率在95％以上。再配合本发明的滤光片的特殊结构设计，可以使得滤光片的表面PV值在直径17mm内小于20微米。
以上所述仅为本发明的一个实施方式而已，并不用于限制本发明，对于本领域的技术人员来说，本发明可以有各种更改和变化。凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包括在本发明的保护范围之内。

Claims (8)

1.一种滤光片，其特征在于，包括基板(1)以及设置在所述基板(1)两侧的带通膜(2)和增透膜(3)，所述带通膜(2)和所述增透膜(3)均由高、低折射率膜层交替排列形成；
所述滤光片在0°-50°入射角度下，1000nm-2000nm波段内的透过率在95％以上。
2.根据权利要求1所述的滤光片，其特征在于，所述高折射率膜层的材料折射率在2.0以上，所述低折射率膜层的材料折射率在2.0以下。
3.根据权利要求2所述的滤光片，其特征在于，所述带通膜(2)中的高折射率膜层的材料包括氧化锗、氧化钛、氧化铌、氧化钽、氧化镧、氢化硅、氢化钛、氢化锗、氢化铌、氢化钽、氢化镧、氮化硅、氮化锗、氮化钛、氮化铌、氮化钽、氮化镧、氢氮化硅、氢氮化锗、氢氮化钛、氢氮化铌、氢氮化钽、氢氮化镧；
所述带通膜(2)中的低折射率膜层的材料包括氧化硅、氟化镁、冰晶石。
4.根据权利要求2所述的滤光片，其特征在于，所述增透膜(3)中的高折射率膜层的材料包括氧化钛、氧化铌、氧化钽、氧化镧、氧化铪、氧化锆、氧化锗；
所述增透膜(3)中的低折射率膜层的材料包括氧化铝、氧化镁、氧化硅、氟化镁、氟化镧、氟化铝。
5.根据权利要求1所述的滤光片，其特征在于，所述带通膜(2)的厚度在10000nm-20000nm之间，所述增透膜(3)的厚度在10000nm-20000nm之间。
6.根据权利要求1所述的滤光片，其特征在于，所述带通膜(2)的厚度与所述增透膜(3)的厚度的比例在1:1至1:1.8之间。
7.根据权利要求1所述的滤光片，其特征在于，所述滤光片的表面PV值在直径17mm内小于20微米。
8.一种用于制备权利要求1-7所述的滤光片的方法，其特征在于，在基板(1)上依次镀制带通膜(2)和增透膜(3)，且所述增透膜(3)在150℃以上的环境下镀制。
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