CN113817996A - Method for preparing high-quality silver electrode on surface of YBCO (Yttrium barium copper oxide) film - Google Patents
Method for preparing high-quality silver electrode on surface of YBCO (Yttrium barium copper oxide) film Download PDFInfo
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 title claims abstract description 46
- 229910052709 silver Inorganic materials 0.000 title claims abstract description 46
- 239000004332 silver Substances 0.000 title claims abstract description 46
- 229910021521 yttrium barium copper oxide Inorganic materials 0.000 title claims abstract description 45
- 238000000034 method Methods 0.000 title claims abstract description 31
- BTGZYWWSOPEHMM-UHFFFAOYSA-N [O].[Cu].[Y].[Ba] Chemical compound [O].[Cu].[Y].[Ba] BTGZYWWSOPEHMM-UHFFFAOYSA-N 0.000 title description 2
- 238000001704 evaporation Methods 0.000 claims abstract description 24
- 230000008020 evaporation Effects 0.000 claims abstract description 21
- 238000002207 thermal evaporation Methods 0.000 claims abstract description 14
- 230000008569 process Effects 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 239000011248 coating agent Substances 0.000 claims description 12
- 238000000576 coating method Methods 0.000 claims description 12
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 9
- 229910052721 tungsten Inorganic materials 0.000 claims description 9
- 239000010937 tungsten Substances 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 239000007888 film coating Substances 0.000 claims description 6
- 238000009501 film coating Methods 0.000 claims description 6
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 5
- 230000001105 regulatory effect Effects 0.000 claims description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 230000006641 stabilisation Effects 0.000 claims description 5
- 238000011105 stabilization Methods 0.000 claims description 5
- 239000002245 particle Substances 0.000 claims description 4
- 238000005086 pumping Methods 0.000 claims description 4
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 claims description 4
- 230000033228 biological regulation Effects 0.000 claims description 2
- 229910052746 lanthanum Inorganic materials 0.000 claims description 2
- -1 lanthanum aluminate Chemical class 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 230000000087 stabilizing effect Effects 0.000 claims 3
- 238000002360 preparation method Methods 0.000 abstract description 14
- 239000010408 film Substances 0.000 description 52
- 238000012876 topography Methods 0.000 description 14
- 230000000052 comparative effect Effects 0.000 description 13
- 239000010931 gold Substances 0.000 description 8
- 238000011160 research Methods 0.000 description 8
- 239000002887 superconductor Substances 0.000 description 8
- 238000009210 therapy by ultrasound Methods 0.000 description 8
- 229910052737 gold Inorganic materials 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 238000001514 detection method Methods 0.000 description 6
- 238000002474 experimental method Methods 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 238000002604 ultrasonography Methods 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- CFJRGWXELQQLSA-UHFFFAOYSA-N azanylidyneniobium Chemical compound [Nb]#N CFJRGWXELQQLSA-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
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- 239000002070 nanowire Substances 0.000 description 2
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- 230000003595 spectral effect Effects 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000029918 bioluminescence Effects 0.000 description 1
- 238000005415 bioluminescence Methods 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000002127 nanobelt Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
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- 239000004065 semiconductor Substances 0.000 description 1
- 238000000527 sonication Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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Abstract
The invention provides a method for preparing a high-quality silver electrode on the surface of a YBCO film, belonging to the technical field of electrode preparation. The preparation method adopts a thermal evaporation method to prepare the silver electrode on the surface of the YBCO film, and regulates and controls the evaporation rate according to the film thickness of the silver electrode in the evaporation process to obtain the high-quality silver electrode, and the electrode has good adhesiveness and small contact resistance.
Description
Technical Field
The invention belongs to the technical field of electrode preparation, and particularly relates to a method for preparing a high-quality silver electrode on the surface of a YBCO film.
Background
The superconducting material is based on a superconducting microscopic theory and various quantum effects, takes a Josephson junction and a superconducting plane micro-nano structure as main structural units, has formed various superconducting electronic devices and circuits such as passive devices, microwave active devices, sensors/detectors and the like, has incomparable advantages of the traditional semiconductor devices and circuits in the aspects of noise, speed, power consumption, bandwidth and the like, and can play an irreplaceable role in the fields of extremely-high-sensitivity detection, quantum information processing, quantum metering, high-performance calculation, leading-edge basic research and the like. According to the critical temperature of the superconductor, the superconductor can be divided into a low-temperature superconductor and a high-temperature superconductor, wherein the superconductor with the critical temperature lower than 25K-30K is the low-temperature superconductor, and the superconductor with the critical temperature higher than 25K-30K is the high-temperature superconductor. At present, the application devices based on low temperature superconducting materials generally work at liquid helium temperature (4.2K and below), and the application devices based on high temperature superconducting materials generally work between liquid hydrogen temperature (about 20K) and liquid nitrogen temperature (about 77K). The higher the transition temperature of the high-temperature superconducting material, the easier it is to be put into practical use. YBCO is the first high-temperature superconducting material with the superconducting temperature above 77K, namely the transition temperature is higher than the boiling point of liquid nitrogen, the material can be cooled by using relatively cheap liquid nitrogen, and the intrinsic physical advantages of high critical magnetic field, high critical temperature and high current density are achieved, so that the material has the advantages of excellent current carrying capacity, higher working temperature, low production raw materials and the like, and the material is a research hotspot of high-temperature superconductivity at present. The YBCO film can be used in the field of microelectronics, such as a superconducting quantum interferometer, a superconducting coupling antenna, a superconducting single photon detector and the like. The superconducting single-photon technology has the advantages of wide spectral response range, fast response recovery time, high counting rate, very small noise, extremely low dark counting rate and the like, and is widely applied to the fields of weak signal detection, high-resolution spectral measurement, nondestructive substance analysis, high-speed phenomenon detection, precise analysis, atmospheric pollution detection, bioluminescence, radiation detection, high-energy physics, astronomical photometry, optical time domain reflection, quantum key distribution systems and the like.
Due to the important position of the single photon detector in the high technology field, the single photon detector has become one of the subjects of the intensive research of the optoelectronic society of developed countries. The preparation of the single photon detector based on the YBCO film is a current research hotspot, and the preparation process of the YBCO single photon detector generally comprises the following steps: preparing a YBCO film, an evaporation electrode and etching a device pattern on the surface of a substrate, wherein the electrode preparation is one of the key steps for completing the device preparation, and the quality of the electrode becomes a key factor for influencing the device performance.
The current methods for preparing electrodes on superconducting films include: in the patent CN200920353214.1, a gold electrode of 45-55nm is prepared on the surface of an YBCO film of 450-550nm by adopting magnetron sputtering; however, in the later period, the lattice matching between gold and most materials is not good, and the gold film is easy to fall off, so that in the research on the optical characteristics of the superconducting detector niobium nitride nanowire, 10nm of titanium is sputtered on the surface of a substrate firstly, and then a 200nm gold electrode is sputtered in an alternating current manner to increase the adhesive force between the electrode and the film/the substrate; in addition, the adhesion between the film formed by thermal evaporation in the electrode preparation by thermal evaporation and the substrate is weak, in order to increase the adhesion between the electrode and the film/substrate, a titanium electrode with the thickness of 5-10nm is also generally prepared on the surface of the superconducting film/substrate to serve as a transition layer to change the mechanical and electrical properties of the metal film, so as to improve the adhesion, for example, the thickness of a Ti electrode evaporated on the surface of the niobium nitride film is about 15nm and the thickness of an Au electrode is about 100nm in the literature 'application basic research of niobium nitride superconducting nanowires and single photon detection devices'; document "quasi-one-dimensional Mo2Preparation of C single crystal nanobelt and research on superconductivity2The surface of C is used
The evaporation rate of (2) was that of evaporating a 10nmTi film and a 90nmAu film in this order.
However, for the YBCO thin film, a large number of experiments in the later period show that when the film thickness of the YBCO thin film is only dozens of nanometers (especially below 30 nm), the superconductivity of the material can be damaged by adopting the magnetron sputtering to prepare the electrode, the utilization rate of the target material is low, and the sample is easy to be subjected to secondary pollution; the Ti or Au is evaporated by thermal evaporation, and because the melting points of the Ti or Au are very high, the superconductivity of the YBCO film is also influenced when the thermal evaporation temperature is too high, which is not beneficial to the subsequent manufacture of superconducting devices; meanwhile, an adhesion layer is prepared between the gold electrode and the substrate YBCO film, which can also affect the superconducting performance of the material.
Therefore, how to realize the preparation of high-quality electrodes without influencing the performance of the YBCO thin film with the thickness of only tens of nanometers becomes the key of research for later preparation of superconducting devices.
Disclosure of Invention
Aiming at the problems existing in the background technology, the invention aims to provide a method for preparing a high-quality silver electrode on the surface of a YBCO film. The preparation method adopts a thermal evaporation method to prepare the silver electrode on the surface of the YBCO film, and regulates and controls the evaporation rate of subsequent growth according to the thickness of the grown silver film in the evaporation process to obtain the high-quality silver electrode, and the electrode has good adhesiveness and small contact resistance.
In order to achieve the purpose, the technical scheme of the invention is as follows:
a method for preparing a high-quality silver electrode on the surface of a YBCO film comprises the following steps:
step 1, preparing a YBCO film on the surface of a substrate by adopting a magnetron sputtering method;
step 2, pasting a hard mask with a required electrode pattern on the surface of the YBCO film obtained in the step 1;
and 3, adopting a thermal evaporation method, placing the sample obtained in the step 2 in an evaporation chamber, placing a silver electrode in a tungsten boat, closing the chamber, and opening an air pumping system. In order to improve the stability of the coating speed and the cleanness of the surface of a sample, and to obtain a high-quality, uniform and strong-adhesion silver filmElectrode, when the vacuum degree reaches 5X 10-5Below Pa, closing an evaporation baffle above the tungsten boat, adjusting the current to 10-15A, and waiting for 1-3 minutes of stabilization time; then adjusting the current to be 20-25A and waiting for 1-3 minutes of stabilization time; adjusting the current to 30-35A and waiting for a stabilization time of 1-3 minutes;
step 4, sputtering process: opening a thermal evaporation baffle above the tungsten boat, adjusting the current to be 40-45A, and then waiting for 2-4 minutes of stabilization time; then regulating the current to 45-50A to ensure that the coating rate is
When the current is not increased, the current is stopped increasing;
step 5, when the film thickness is less than 30nm, all the materials are adopted
When the film thickness reaches 30nm, the current is adjusted to ensure that the film coating rate is increased from the first
Is increased by
Then adopt
Continuously coating at the coating rate;
and 6, closing the instrument after the film coating is finished, and taking out the sample to obtain the high-quality silver electrode on the surface of the YBCO film.
Further, the substrate material in step 1 is strontium titanate, lanthanum aluminate, silicon or silicon dioxide.
Further, the thickness of the silver electrode prepared in step 5 is 60-100 nm.
Further, the thickness of the YBCO film in the step 1 is less than 80 nm.
Further, the current regulation rate in step 4 is 0.1-0.2A/s.
The mechanism of the invention is as follows:
because the rate of thermal evaporation is controlled and regulated by current, when the current changes rapidly, the actual evaporation rate cannot reach the evaporation rate expected by the set current immediately, and the current fluctuates in a plurality of numerical ranges, so that the growth rates are inconsistent, the evaporation rate is stabilized by adopting a mode of slowly increasing the current firstly; experiments prove that the adhesive force between the silver electrode and the substrate/film can be greatly improved due to low evaporation rate, the coating time can be shortened due to high evaporation rate, the temperature can be increased due to increased evaporation current, the kinetic energy of the evaporated silver particles is increased, the mobility of the silver particles is increased in the process of depositing the silver particles on a substrate to form a film, and a more perfect and compact film is formed. Therefore, the silver electrode is prepared by adopting a gradient evaporation method and adopting different evaporation rates in stages, and the advantages of low rate and high rate are combined, so that the silver electrode prepared in a short time has good adhesion with a YBCO film, and the formed silver electrode film has high quality.
In summary, due to the adoption of the technical scheme, the invention has the beneficial effects that:
the preparation method can obtain a high-quality silver electrode film on the YBCO film, the contact resistance of the electrode is small, the electrode is not easy to fall off after ultrasonic treatment, and meanwhile, the gradient method can save time for experiments and improve the compactness of the film.
Drawings
FIG. 1 is a surface topography of an electrode prepared in example 1 of the present invention.
FIG. 2 is a surface topography of the electrode prepared in example 1 of the present invention after 5min of ultrasound.
FIG. 3 is a surface topography of an electrode prepared in example 2 of the present invention.
FIG. 4 is a surface topography of the electrode prepared in example 2 of the present invention after 5min of ultrasound.
FIG. 5 is a surface topography of an electrode prepared in comparative example 1 of the present invention.
FIG. 6 is a surface topography of the electrode prepared in comparative example 1 of the present invention after 5min of sonication.
FIG. 7 is a surface topography of an electrode prepared on the surface of a pure silicon wafer in comparative example 2 according to the present invention.
FIG. 8 is a surface topography of an electrode prepared on the surface of pure silicon of comparative example 2 according to the present invention after 5min of ultrasound.
FIG. 9 is a surface topography of an electrode prepared on the surface of silica in comparative example 2 of the present invention.
FIG. 10 is a surface topography of an electrode prepared on the surface of the silicon dioxide of comparative example 2 according to the present invention after being sonicated for 5 min.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to the following embodiments and accompanying drawings.
Example 1
A method for preparing a high-quality silver electrode on the surface of a YBCO film comprises the following steps:
step 1, preparing a 1 x 1cm strontium titanate substrate, and preparing YBCO films with the thickness of 30nm on the surfaces of the three substrates by adopting a magnetron sputtering method;
step 2. the preparation process of the YBCO film in the step 1 specifically comprises the following steps: putting the strontium titanate substrate into the cavity, closing the door of the cavity, and mechanically pumping to 2 × 102Heating at about Pa, heating again, heating the deposition cavity, the sputtering cavity and the heating pipeline, wherein the temperature is 830 ℃, after the specified temperature is reached, when the vacuum degree reaches below 1Pa, introducing argon and oxygen, starting sputtering coating of the cavity, timing for 21 minutes, closing the sputtering and mechanical pump, then closing the argon, reducing the temperature to 700 ℃, introducing oxygen for in-situ annealing, fully absorbing the oxygen by the film sample to improve the oxygen content, keeping the temperature for half an hour, closing a heating power supply, and taking out the sample after the temperature is cooled to 100 ℃ to obtain a 30nm YBCO film;
step 3, pasting a hard mask with a required electrode pattern on the surface of the YBCO film obtained in the step 2 by using a high-temperature adhesive tape;
and 4, adopting a thermal evaporation method, placing the sample obtained in the step 2 in an evaporation chamber, placing a silver electrode in a tungsten boat, closing the chamber, and opening an air pumping system. The vacuum degree of the chamber to be evaporated is reduced to 5 x 10-4Closing the tungsten boat when the pressure is below PaAn upper evaporation baffle;
step 5, adjusting the current to 15A, waiting for 2 minutes, and waiting for the current to be stable; then adjusting the current to 25A and waiting for 2 minutes until the current is stable; adjusting the current to 35A, waiting for 2 minutes, and waiting for the current to be stable; at the moment, the current is basically stable, the current knob is continuously adjusted, the current is increased without obvious fluctuation, the thermal evaporation baffle above the tungsten boat is opened at the moment, the current is adjusted to be 43A, the waiting time is selected to be 2 minutes to ensure the matching of the temperature of the cavity and the current, the current is slowly adjusted to be 45A, and the coating rate is at the moment
Stopping increasing the current;
step 6, when the thickness of the silver electrode film is 30nm, adjusting the current to be 46A so as to ensure that the film coating rate is increased from the beginning
Become into
Then adopt
Continuously coating the film at the coating speed until the thickness of the electrode film is 80 nm;
and 7, closing the thermal evaporation baffle after film coating is finished, closing the instrument, and taking out the sample to obtain the high-quality silver electrode on the surface of the YBCO film.
The surface topography of the sample prepared in this example is shown in fig. 1, and the surface topography of the electrode after 5min of ultrasound is shown in fig. 2 after the sample is placed in an acetone solution for an ultrasound experiment.
Example 2
And (3) evaporating a silver electrode on the surface of the YBCO film according to the steps of the embodiment 1, and only adjusting the evaporation time of the step 6 to ensure that the thickness of the prepared electrode film is 60nm, and other steps are not changed.
The surface topography of the silver electrode prepared in this example is shown in fig. 3, and the silver electrode is placed in an acetone solution for an ultrasonic experiment, and the result of ultrasonic treatment is shown in fig. 4 after 5 min.
Comparative example 1
Silver electrodes are evaporated on the surface of the YBCO film according to the steps of the embodiment 1, and only the evaporation rates of the step 5 and the step 6 are adjusted to be
The silver electrode with a film thickness of 80nm was prepared.
The electrode prepared in this comparative example had a surface morphology as shown in fig. 5, and was subjected to ultrasonic treatment for 5min, the results of which are shown in fig. 6.
Comparative example 2
Silver-plated electrodes were evaporated on a 1X 1cm piece of pure silicon, a 1X 1cm piece of silicon dioxide substrate surface according to the procedure of example 1.
The surface topography of the electrode prepared on the surface of the pure silicon wafer of this comparative example was as shown in fig. 7, and the results of the ultrasonic treatment were as shown in fig. 8 for 5 min.
The surface morphology of the electrode prepared on the surface of the silica of this comparative example is shown in fig. 9, and the results of the ultrasonic treatment are shown in fig. 10, after 5 min.
As can be seen from the figure, in the embodiment 1 and the embodiment 2 of the scheme, the silver electrode has high quality and good adhesive force, and basically does not fall off after ultrasonic treatment; in comparative example 1, the silver electrode after ultrasonic treatment fell off in a large area, and the adhesion force was poor, so the prepared silver electrode was basically useless to the device and did not meet the experimental requirements; in comparative example 2, the silver electrodes prepared on the surfaces of the pure silicon wafer and the silicon dioxide also have large-area shedding after ultrasonic treatment, which shows that the method of the invention only aims at preparing the high-quality silver electrode on the surface of the YBCO film at present.
While the invention has been described with reference to specific embodiments, any feature disclosed in this specification may be replaced by alternative features serving the same, equivalent or similar purpose, unless expressly stated otherwise; all of the disclosed features, or all of the method or process steps, may be combined in any combination, except mutually exclusive features and/or steps.
Claims (5)
1. A method for preparing a high-quality silver electrode on the surface of a YBCO film is characterized by comprising the following steps:
step 1, preparing a YBCO film on the surface of a substrate by adopting a magnetron sputtering method;
step 2, pasting a hard mask with a required electrode pattern on the surface of the YBCO film obtained in the step 1;
step 3, adopting a thermal evaporation method, placing the sample obtained in the step 2 in an evaporation chamber, placing silver particles in a tungsten boat, closing the chamber, opening an air pumping system until the vacuum degree of the chamber reaches 5 multiplied by 10-5Below Pa, firstly closing an evaporation baffle above the tungsten boat, adjusting the current to 10-15A, and stabilizing for 1-3 minutes; then regulating the current to be 20-25A, and stabilizing for 1-3 minutes; then regulating the current to be 30-35A, and stabilizing for 1-3 minutes;
step 4, sputtering process: opening a thermal evaporation baffle above the tungsten boat, adjusting the current to be 40-45A, and then waiting for 2-4 minutes of stabilization time; then regulating the current to 45-50A to ensure that the coating rate is
When the current is not increased, the current is stopped increasing;
step 5, when the film thickness is less than 30nm, all the materials are adopted
When the film thickness reaches 30nm, the current is adjusted to ensure that the film coating rate is increased from the first
Is increased by
Then adopt
Continuously coating at the coating rate;
and 6, closing the instrument after the film coating is finished, and taking out the sample to obtain the high-quality silver electrode on the surface of the YBCO film.
2. The method for preparing a high-quality silver electrode on the surface of the YBCO film as claimed in claim 1, wherein the substrate material in the step 1 is strontium titanate, lanthanum aluminate, silicon or silicon dioxide.
3. The method for preparing a high quality silver electrode on the surface of the YBCO film according to claim 1, wherein the thickness of the YBCO film in the step 1 is less than 80 nm.
4. The method for preparing a high quality silver electrode on the surface of the YBCO film according to claim 1, wherein the current regulation rate in the step 4 is 0.1-0.2A/s.
5. The method for preparing a high-quality silver electrode on the surface of the YBCO film as recited in claim 1, wherein the thickness of the silver electrode prepared in the step 5 is 60-100 nm.
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| CN102751040A (en) * | 2012-05-29 | 2012-10-24 | 电子科技大学 | High-temperature superconducting double-sided tape and preparation method thereof |
| CN104051625A (en) * | 2014-06-13 | 2014-09-17 | 西安电子科技大学 | Polymer solar cell based on AZO/ZnO cathode and manufacturing method of polymer solar cell |
| CN104132921A (en) * | 2014-07-07 | 2014-11-05 | 华南师范大学 | Chemical vapor deposition based method for preparing surface Raman enhanced active substrate |
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