CN113802093A - Preparation method of high-transmittance deep ultraviolet filter - Google Patents
Preparation method of high-transmittance deep ultraviolet filter Download PDFInfo
- Publication number
- CN113802093A CN113802093A CN202111107054.4A CN202111107054A CN113802093A CN 113802093 A CN113802093 A CN 113802093A CN 202111107054 A CN202111107054 A CN 202111107054A CN 113802093 A CN113802093 A CN 113802093A
- Authority
- CN
- China
- Prior art keywords
- filter
- transmittance
- ultraviolet
- deep ultraviolet
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002834 transmittance Methods 0.000 title claims abstract description 34
- 238000002360 preparation method Methods 0.000 title claims abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 44
- 239000000463 material Substances 0.000 claims abstract description 30
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims abstract description 25
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 claims abstract description 21
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 20
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 20
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 20
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 20
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 20
- 230000003287 optical effect Effects 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 19
- 238000000151 deposition Methods 0.000 claims description 10
- 230000008021 deposition Effects 0.000 claims description 10
- 230000005540 biological transmission Effects 0.000 claims description 9
- 238000001914 filtration Methods 0.000 claims description 9
- 150000002500 ions Chemical class 0.000 claims description 8
- 238000007747 plating Methods 0.000 claims description 3
- 238000005273 aeration Methods 0.000 claims description 2
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 claims description 2
- 229910001634 calcium fluoride Inorganic materials 0.000 claims description 2
- 239000005350 fused silica glass Substances 0.000 claims description 2
- 239000012528 membrane Substances 0.000 claims description 2
- 238000005457 optimization Methods 0.000 claims description 2
- 238000000411 transmission spectrum Methods 0.000 claims description 2
- 238000004659 sterilization and disinfection Methods 0.000 abstract description 36
- 230000001954 sterilising effect Effects 0.000 abstract description 19
- 230000000694 effects Effects 0.000 abstract description 7
- 239000011248 coating agent Substances 0.000 abstract description 5
- 238000000576 coating method Methods 0.000 abstract description 5
- 239000011521 glass Substances 0.000 abstract description 3
- 239000002184 metal Substances 0.000 abstract description 3
- 230000000149 penetrating effect Effects 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 47
- 239000010410 layer Substances 0.000 description 32
- 238000010521 absorption reaction Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 239000007888 film coating Substances 0.000 description 4
- 238000009501 film coating Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 241000894006 Bacteria Species 0.000 description 2
- 229910002319 LaF3 Inorganic materials 0.000 description 2
- 241000700605 Viruses Species 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000000813 microbial effect Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- BYMUNNMMXKDFEZ-UHFFFAOYSA-K trifluorolanthanum Chemical compound F[La](F)F BYMUNNMMXKDFEZ-UHFFFAOYSA-K 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- 241000195493 Cryptophyta Species 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 244000052616 bacterial pathogen Species 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 244000005700 microbiome Species 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- -1 oxygen ions Chemical class 0.000 description 1
- 244000045947 parasite Species 0.000 description 1
- 244000052769 pathogen Species 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/10—Glass or silica
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/083—Oxides of refractory metals or yttrium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/221—Ion beam deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
- C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/208—Filters for use with infrared or ultraviolet radiation, e.g. for separating visible light from infrared and/or ultraviolet radiation
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/283—Interference filters designed for the ultraviolet
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/285—Interference filters comprising deposited thin solid films
Abstract
The invention discloses a preparation method of a high-transmittance deep ultraviolet filter, which comprises the following steps: step 1: the initial structure of the selected filter is: Air/(LH) m/Sub/(LH) n/Air. Has the advantages that: the high-transmittance deep ultraviolet filter adopts metal Hf and HfO2 as high-refractive-index film materials and SiO2 as low-refractive-index film materials, the transmittance at the wavelength of 220nm is greater than 80%, the average transmittance at the position of 290nm of 235 plus materials is less than 1%, the antireflection film and the filter cut-off film use the same two coating materials, the manufacturing process is simplified, the uniformity of the filter is good, the limitation of the filter manufacturing on equipment is reduced, the manufacturing cost is reduced, the mass production is facilitated, and meanwhile, as the ultraviolet ray with the wavelength of 220nm has the weakest penetrating power, most of transparent glass and plastic cannot be penetrated, and the filter has the same disinfection and sterilization effects as a traditional ultraviolet lamp, the filter is applied to a sterilization place and simultaneously effectively solves the safety problem that people are in the field during ultraviolet disinfection and sterilization.
Description
Technical Field
The invention relates to the technical field of optical thin film filters, in particular to a preparation method of a high-transmittance deep ultraviolet filter.
Background
The effective wavelength range for ultraviolet sterilization can be divided into four different bands: UVA (400-315 nm), UVB (315-280 nm), UVC (280-200 nm) and vacuum ultraviolet (200-100 nm); only the UVA and UVB portions of the earth's surface that are transparent to the ozone protective layer and cloud; in terms of sterilization speed, UVC is in the range of microbial absorption peak, viruses and bacteria can be killed by destroying DNA structure of microorganism within 1s, while UVA and UVB are out of the range of microbial absorption peak, the sterilization speed is very slow, and the sterilization effect can be achieved within hours, and the part belongs to the ineffective ultraviolet part in the hydraulic retention (irradiation) time of seconds in the practical engineering; the penetration capacity of vacuum ultraviolet light is extremely weak, quartz with extremely high light transmittance is required to be adopted for the lamp tube and the sleeve, TOC in water is generally degraded in the semiconductor industry, and the TOC is not used for sterilization; therefore, the ultraviolet disinfection in the water supply and drainage engineering is actually referred to as UVC disinfection. The ultraviolet light disinfection technology is based on modern epidemic prevention science, medicine and photodynamic, specially designed UVC wave band ultraviolet light with high efficiency, high intensity and long service life is used for irradiating flowing water, various bacteria, viruses, parasites, algae and other pathogens in the water are directly killed, and the disinfection purpose is achieved; the ultraviolet ray disinfection and sterilization has wide application range, hospitals, schools, nursery houses, cinemas, buses, offices, families and the like, can purify air, eliminate musty smell, generate a certain amount of negative oxygen ions, and can especially freshen the air in rooms disinfected by ultraviolet rays; in public places, some germs can be prevented from being transmitted through air or transmitted through the surface of an object through ultraviolet disinfection; however, the current ultraviolet disinfection and sterilization can not be safely carried out under the condition that people are present, which greatly limits the convenient, flexible, wide and effective acceptance of the ultraviolet disinfection and sterilization.
The ultraviolet ray with the wavelength of 220nm has the weakest penetrating power, can not penetrate most of transparent glass and plastic, and has the same disinfection and sterilization effect as the traditional ultraviolet lamp; therefore, the deep ultraviolet filter in the deep ultraviolet disinfection and sterilization instrument with the wavelength of 220nm and high transmittance is developed, the disinfection and sterilization effect of deep ultraviolet is greatly improved, the safety problem of disinfection and sterilization when people are present is well solved, the use field and the use place of deep ultraviolet disinfection and sterilization are widened, and the economic value and the social benefit are considerable.
Disclosure of Invention
The present invention is directed to a method for manufacturing a high transmittance deep ultraviolet filter to solve the above problems.
The invention realizes the purpose through the following technical scheme:
a preparation method of a high-transmittance deep ultraviolet filter comprises the following steps:
step 1: the initial structure of the selected filter is: Air/(LH) m/Sub/(LH) n/Air, wherein Sub represents a substrate, H and L represent film layers of high and low refractive index materials with optical thickness of lambda/4, and m and n are the cycle number of the film layers;
step 2: selecting a material of a substrate Sub, a high-refractive-index material H and a low-refractive-index material L;
and step 3: setting optimization target parameters including wavelength and pass rate according to technical indexes of the optical filter;
and 4, step 4: carrying out optimal design on the optical filter according to a set target value;
and 5: and plating the optimized optical filter film system on a substrate in an ion source assisted deposition mode, determining whether the coated optical filter meets the design requirement, and if not, adjusting the optical filter through the process parameters such as initial deposition temperature, deposition vacuum degree, deposition rate, ion source current, voltage, aeration quantity during deposition and the like until the optical filter meets the target value.
Furthermore, the optical filter comprises an ultraviolet transmission substrate, an antireflection film layer plated on one surface of the ultraviolet transmission substrate and an optical filtering cut-off film layer on the other surface of the ultraviolet transmission substrate.
Furthermore, the antireflection film layer and the filtering cut-off film layer both comprise an HfO2 film material and an SiO2 film material.
Further, the ultraviolet-transmitting substrate is fused silica, CaF2 or MgF2 ultraviolet-transmitting material.
Further, the membrane system design software is Macleod, TFCalc or Optilayer.
Furthermore, the transmittance of the filter to ultraviolet light with the wavelength of 220nm is more than 80%, and the average transmittance of the filter to ultraviolet light with the wavelength of 235-290nm is less than 1%.
Further, the transmission spectrum of the filter was measured using a UH-4150 spectrophotometer.
The invention has the beneficial effects that:
the high-transmittance deep ultraviolet filter adopts metal Hf and HfO2 as high-refractive-index film materials and SiO2 as low-refractive-index film materials, the transmittance at the wavelength of 220nm is greater than 80%, the average transmittance at the position of 290nm of 235 plus materials is less than 1%, the antireflection film and the filter cut-off film use the same two coating materials, the manufacturing process is simplified, the uniformity of the filter is good, the limitation of the filter manufacturing on equipment is reduced, the manufacturing cost is reduced, the mass production is facilitated, and meanwhile, as the ultraviolet ray with the wavelength of 220nm has the weakest penetrating power, most of transparent glass and plastic cannot be penetrated, and the filter has the same disinfection and sterilization effects as a traditional ultraviolet lamp, the filter is applied to a sterilization place and simultaneously effectively solves the safety problem that people are in the field during ultraviolet disinfection and sterilization.
Drawings
FIG. 1 is a schematic structural diagram of a middle filter in a method for manufacturing a high-transmittance deep ultraviolet filter according to the present invention;
FIG. 2 is a designed transmittance curve diagram of an optical filter in the method for manufacturing a high transmittance deep ultraviolet optical filter according to the present invention;
fig. 3 is a graph of actually measured transmittance of the optical filter in the method for manufacturing a high transmittance deep ultraviolet optical filter according to the present invention.
The reference numerals are explained below:
100. an ultraviolet-transmitting substrate; 200. an anti-reflection film layer; 300. and a light filtering cut-off film layer.
Detailed Description
In order to make the implementation path of the present invention clearer, the following describes embodiments of the present invention in detail with reference to the accompanying drawings and examples.
As shown in fig. 1, the high transmittance deep ultraviolet filter of the present invention includes an ultraviolet transmitting substrate 100, an anti-reflection film layer 200 plated on one side of the ultraviolet transmitting substrate 100, and a filter cut-off film layer 300 plated on the other side of the ultraviolet transmitting substrate 100, wherein the ultraviolet transmitting substrate 100 is JGS1 quartz, the anti-reflection film layer 200 and the filter cut-off film layer 300 include HfO2 film material and SiO2 film material, the anti-reflection film layer and the filter cut-off film layer total 3 layers and the filter cut-off film total 26 layers, and the film system structure is:
antireflection film system structure
| Film layer | Material | Thickness nm |
| 1 | SiO2 | 15.06 |
| 2 | HfO2 | 38.34 |
| 3 | SiO2 | 25.24 |
Antireflection film system structure
| Film layer | Material | Thickness nm | Film layer | Material | Thickness nm |
| 1 | HfO2 | 32.6 | 14 | SiO2 | 41.61 |
| 2 | SiO2 | 46.15 | 15 | HfO2 | 28.39 |
| 3 | HfO2 | 29.48 | 16 | SiO2 | 42.37 |
| 4 | SiO2 | 43.06 | 17 | HfO2 | 28.91 |
| 5 | HfO2 | 28.33 | 18 | SiO2 | 42.73 |
| 6 | SiO2 | 41.94 | 19 | HfO2 | 28.21 |
| 7 | HfO2 | 27.93 | 20 | SiO2 | 41.44 |
| 8 | SiO2 | 41.65 | 21 | HfO2 | 34.35 |
| 9 | HfO2 | 27.92 | 22 | SiO2 | 68.32 |
| 10 | SiO2 | 41.61 | 23 | HfO2 | 31.72 |
| 11 | HfO2 | 27.86 | 24 | SiO2 | 55.49 |
| 12 | SiO2 | 41.2 | 25 | HfO2 | 33.7 |
| 13 | HfO2 | 27.82 | 26 | SiO2 | 7.69 |
。
The high-refractive-index HfO2 material in the film layer can be realized in a mode of metal Hf oxidation evaporation or a mode of HfO2 direct evaporation in the film coating process, and the material used by the antireflection film system is the same as that of the filtering cut-off film system; in the example, the transmittance at the 220nm ultra-violet band is required to be high, the optical thickness of the film layer is required to be thin, the absorption coefficient of the film layer is required to be small, the refractive index of HfO2 is higher than that of ultraviolet film materials such as Al2O3 and LaF3, the total thickness of the optical filter film layer is greatly reduced, and meanwhile, in the film forming process, the process parameters such as ion source current, voltage, oxygen charging amount, evaporation rate, film coating temperature and the like are tested by adopting an orthogonal experiment method, the HfO2 film layer has the ion source current of 600mA, the ion source voltage of 600V, the oxygen charging amount of 1.2 multiplied by 10 < -2 > Pa, the evaporation rate of 0.05-0.15nm/s, and the absorption coefficient of the HfO2 film layer at the 220nm position is smaller than 10-4 orders of magnitude under the process condition that the film coating temperature is 120-150 ℃; the 26-layer film system structure can achieve the effect of using more than 50 layers of Al2O3 or LaF3 high-refractive-index materials, and meanwhile, the light filtering film layer with excellent compactness, consistency, stability and the like can be realized, the limitation of the light filter manufacturing on equipment is reduced, the film coating time is greatly shortened, the manufacturing cost is reduced, and the mass production is facilitated.
The antireflection film layer 200 and the filtering cut-off film layer 300 are respectively coated on the two surfaces of the ultraviolet transmission substrate 100 by a physical vapor deposition method, the coating adopts a general technology, the specific process is not limited, and the ion-assisted electron beam evaporation is preferentially used for coating, so that the high refractive index and the high transmittance of the HfO2 film at the wavelength of 200-250nm can be realized by adopting the coating mode, and the high transmittance of the optical filter at the position of 220nm can be reached.
As shown in fig. 1, when the ultraviolet filter is used, light passes through the antireflection film layer 200, the ultraviolet-transmissive substrate 100, and the filter cut-off film layer 300 in sequence, and then the selective filtering effect is achieved.
After the plating is finished, a UH4150 spectrophotometer is adopted to carry out curve detection, the transmission curve is shown as figure 3, and a high-transmission deep ultraviolet filter with the transmission rate of more than 80 percent at the wavelength of 215-225nm and the average transmission rate of less than 1 percent at the wavelength of 235-290nm can be obtained from the figure 3, namely, the plated deep ultraviolet filter is matched with the theoretical design.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (7)
1. A preparation method of a high-transmittance deep ultraviolet filter is characterized by comprising the following steps: it comprises the following steps:
step 1: the initial structure of the selected filter is: Air/(LH) m/Sub/(LH) n/Air, wherein Sub represents a substrate, H and L represent film layers of high and low refractive index materials with optical thickness of lambda/4, and m and n are the cycle number of the film layers;
step 2: selecting a material of a substrate Sub, a high-refractive-index material H and a low-refractive-index material L;
and step 3: setting optimization target parameters including wavelength and pass rate according to technical indexes of the optical filter;
and 4, step 4: carrying out optimal design on the optical filter according to a set target value;
and 5: and plating the optimized optical filter film system on a substrate in an ion source assisted deposition mode, determining whether the coated optical filter meets the design requirement, and if not, adjusting the optical filter through the process parameters such as initial deposition temperature, deposition vacuum degree, deposition rate, ion source current, voltage, aeration quantity during deposition and the like until the optical filter meets the target value.
2. The method for manufacturing a high transmittance deep ultraviolet filter according to claim 1, wherein: the optical filter comprises an ultraviolet transmission substrate (100), an antireflection film layer (200) plated on one surface of the ultraviolet transmission substrate (100) and an optical filtering cut-off film layer (300) on the other surface.
3. The method for manufacturing a high transmittance deep ultraviolet filter according to claim 2, wherein: the antireflection film layer (200) and the light filtering cut-off film layer (300) both comprise HfO2 film materials and SiO2 film materials.
4. The method for manufacturing a high transmittance deep ultraviolet filter according to claim 2, wherein: the ultraviolet transmitting substrate (100) is made of fused silica, CaF2 or MgF 2.
5. The method for manufacturing a high transmittance deep ultraviolet filter according to claim 1, wherein: the membrane system design software is Macleod, TFCalc or Optilayer.
6. The method for manufacturing a high transmittance deep ultraviolet filter according to claim 1, wherein: the transmittance of the filter to ultraviolet light with the wavelength of 220nm is more than 80 percent, and the average transmittance of the filter to ultraviolet light with the wavelength of 235-290nm is less than 1 percent.
7. The method for manufacturing a high transmittance deep ultraviolet filter according to claim 1, wherein: the transmission spectrum of the filter was measured using a UH-4150 spectrophotometer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111107054.4A CN113802093A (en) | 2021-09-22 | 2021-09-22 | Preparation method of high-transmittance deep ultraviolet filter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111107054.4A CN113802093A (en) | 2021-09-22 | 2021-09-22 | Preparation method of high-transmittance deep ultraviolet filter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113802093A true CN113802093A (en) | 2021-12-17 |
Family
ID=78939922
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111107054.4A Pending CN113802093A (en) | 2021-09-22 | 2021-09-22 | Preparation method of high-transmittance deep ultraviolet filter |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113802093A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103513313A (en) * | 2013-09-27 | 2014-01-15 | 华侨大学 | Ultraviolet fluorescence light filter used for skin damage detection and manufacturing method thereof |
| CN113050272A (en) * | 2021-03-03 | 2021-06-29 | 中国科学院上海光学精密机械研究所 | Deep ultraviolet filter and design method thereof |
-
2021
- 2021-09-22 CN CN202111107054.4A patent/CN113802093A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103513313A (en) * | 2013-09-27 | 2014-01-15 | 华侨大学 | Ultraviolet fluorescence light filter used for skin damage detection and manufacturing method thereof |
| CN113050272A (en) * | 2021-03-03 | 2021-06-29 | 中国科学院上海光学精密机械研究所 | Deep ultraviolet filter and design method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Otaki et al. | Inactivation differences of microorganisms by low pressure UV and pulsed xenon lamps | |
| US9415126B2 (en) | Reflective transparent optical chamber | |
| US20210122667A1 (en) | Uv-c wavelength radially emitting particle-enabled optical fibers for microbial disinfection | |
| JP3233968U (en) | UV permeable glass for removing methicillin-resistant Staphylococcus aureus | |
| Lin et al. | Photocatalytic and antibacterial properties of medical‐grade PVC material coated with TiO2 film | |
| US11945735B2 (en) | Ultraviolet irradiation of a flowing fluid | |
| CN113050272A (en) | Deep ultraviolet filter and design method thereof | |
| Lanzarini-Lopes et al. | Nanoparticle and transparent polymer coatings enable UV-C side-emission optical fibers for inactivation of escherichia coli in water | |
| Zhao et al. | Evanescent wave interactions with nanoparticles on optical fiber modulate side emission of germicidal ultraviolet light | |
| US20220249719A1 (en) | Uv-c wavelength side-emitting optical fibers | |
| CN113802093A (en) | Preparation method of high-transmittance deep ultraviolet filter | |
| CN113433608A (en) | Far ultraviolet (200-230 nm) band-pass filter | |
| CN211787047U (en) | Infrared touch assembly with sterilization function | |
| WO2023042682A1 (en) | Optical filter, optical filter component, sterilizer, and optical filter production method | |
| Wen et al. | Antibacterial properties of Ag/TiO 2/PDA nanofilm on anodized 316L stainless steel substrate under illumination by a normal flashlight | |
| CN107608018A (en) | Method and system for manufacturing polarizing film | |
| WO2020004272A1 (en) | Water treatment system | |
| JP2022089142A (en) | Method for removing methicillin-resistant staphylococcus aureus | |
| CN111588879A (en) | UV sterilizing device and purifier | |
| Cabaj et al. | What means “Dose” in UV-disinfection with medium pressure lamps? | |
| Hwang et al. | Combination of light emitting diode at 375 nm and photo-reactive TiO 2 layer prepared by electrostatic spraying for sterilization | |
| Koizumi et al. | Simple estimation of effective irradiance of UV-LED light for evaluation of microbial inactivation in turbid aqueous solution | |
| Gao et al. | Evaluation of the sterilization effect of a new mercury-free UVC light source. | |
| Skudra et al. | Alternative UV light sources for surface disinfection | |
| Liu et al. | Combination of UV radiation with 3D structure media filter for indoor air disinfection |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |