CN113800903A - Bismuth antimonate-bismuth ytterbium acid-lead titanate piezoelectric ceramic material and preparation method thereof - Google Patents
Bismuth antimonate-bismuth ytterbium acid-lead titanate piezoelectric ceramic material and preparation method thereof Download PDFInfo
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- 229910052797 bismuth Inorganic materials 0.000 title claims abstract description 27
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 title claims abstract description 26
- 229910010293 ceramic material Inorganic materials 0.000 title claims abstract description 23
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 239000000919 ceramic Substances 0.000 claims abstract description 29
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000000843 powder Substances 0.000 claims description 40
- 238000000498 ball milling Methods 0.000 claims description 23
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical class [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 20
- 238000005245 sintering Methods 0.000 claims description 13
- 239000008367 deionised water Substances 0.000 claims description 12
- 229910021641 deionized water Inorganic materials 0.000 claims description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 12
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 10
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 8
- 230000010287 polarization Effects 0.000 claims description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 7
- 229910052787 antimony Inorganic materials 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 6
- GHPGOEFPKIHBNM-UHFFFAOYSA-N antimony(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Sb+3].[Sb+3] GHPGOEFPKIHBNM-UHFFFAOYSA-N 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 238000001035 drying Methods 0.000 claims description 5
- 230000005684 electric field Effects 0.000 claims description 5
- 239000000706 filtrate Substances 0.000 claims description 5
- 238000000227 grinding Methods 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 5
- 239000004615 ingredient Substances 0.000 claims description 5
- 150000002500 ions Chemical class 0.000 claims description 5
- 229910052745 lead Inorganic materials 0.000 claims description 5
- 238000002156 mixing Methods 0.000 claims description 5
- 238000005498 polishing Methods 0.000 claims description 5
- 238000003825 pressing Methods 0.000 claims description 5
- 239000002994 raw material Substances 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- FIXNOXLJNSSSLJ-UHFFFAOYSA-N ytterbium(III) oxide Inorganic materials O=[Yb]O[Yb]=O FIXNOXLJNSSSLJ-UHFFFAOYSA-N 0.000 claims description 5
- 238000010304 firing Methods 0.000 claims description 4
- 239000011833 salt mixture Substances 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 claims description 2
- 229920002545 silicone oil Polymers 0.000 claims description 2
- YEXPOXQUZXUXJW-UHFFFAOYSA-N lead(II) oxide Inorganic materials [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 claims 1
- 239000011780 sodium chloride Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000003921 oil Substances 0.000 description 3
- 229910052706 scandium Inorganic materials 0.000 description 3
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- 229910052769 Ytterbium Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 1
- HLYGIXWYRZNHJV-UHFFFAOYSA-N [Pb].[Yb] Chemical compound [Pb].[Yb] HLYGIXWYRZNHJV-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000306 component Substances 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000008204 material by function Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000001757 thermogravimetry curve Methods 0.000 description 1
- 230000026683 transduction Effects 0.000 description 1
- 238000010361 transduction Methods 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
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Abstract
The invention discloses a bismuth antimonate-bismuth ytterbium acid-lead titanate piezoelectric ceramic material and a preparation method thereof, relating to the technical field of piezoelectric ceramic, wherein the formula molecular formula is as follows: xBiSbO3‑(1‑x‑y)BiYbO3‑yPbTiO3‑z wt％In2O3Wherein x is more than or equal to 0 and less than or equal to 0.1, y is more than or equal to 0.4 and less than or equal to 0.8, and z is more than or equal to 0 and less than or equal to 0.5. By adopting the technical scheme, the high-voltage cable has high Curie point and high piezoelectricity, and the cost can be saved.
Description
Technical Field
The invention relates to the technical field, in particular to a bismuth antimonate-bismuth ytterbium acid-lead titanate piezoelectric ceramic material and a preparation method thereof.
Background
Piezoelectric ceramics are a class of functional materials that achieve the mutual coupling and conversion (transduction) of mechanical energy and electrical energy. The piezoelectric ceramic material has very wide application in the fields of advanced manufacturing, electronic information, energy detection, national defense and the like, such as a piezoelectric driver, an ultrasonic motor, sound wave detection in a deep well, a transducer, a vibration sensor and the like, and the piezoelectric ceramic material is a sensitive element and a core component of the whole system. Therefore, the performance parameters of the piezoceramic material, particularly the piezoelectric performance and the Curie temperature of the material, directly determine the quality of the system performance. A higher piezoelectric constant generally means that the primary function of the system or device is more excellent. The high Curie temperature can ensure the stable work at high temperature.
Lead-based system ceramics, such as lead zirconate titanate (PZT), are most commonly used with low curie temperatures and high lead contents. Lead-free systems such as bismuth layered ceramics have a high curie point but not a high piezoelectric constant. The bismuth scandate lead titanate system has high Curie point and high piezoelectric constant, but the rare earth element scandium is expensive. The bismuth ferrite lead titanate system has high Curie point, but large leakage current during polarization and low piezoelectric constant.
In view of the above, the present invention is designed based on the various defects and inconveniences caused by the perfection of the above piezoelectric ceramic material, and the present invention is further conceived and developed through active research and improvement.
Disclosure of Invention
The invention aims to provide a bismuth antimonate-bismuth ytterbium titanate lead system piezoelectric ceramic material which has high Curie point and high piezoelectricity and can save cost and a preparation method thereof aiming at the defects and the defects of the prior art.
In order to achieve the purpose, the invention adopts the following technical scheme:
the formula of the bismuth antimonate-bismuth ytterbium acid-lead titanate piezoelectric ceramic material is as follows:
xBiSbO3-(1-x-y)BiYbO3-yPbTiO3-z wt％In2O3
wherein x is more than or equal to 0 and less than or equal to 0.1, y is more than or equal to 0.4 and less than or equal to 0.8, and z is more than or equal to 0 and less than or equal to 0.5.
Another object of the present invention is to provide a bismuth antimonate-bismuth ytterbium acid-lead titanate piezoelectric ceramic material and a method for preparing the same, which comprises the following steps:
the method comprises the following steps: with Sb2O3、Bi2O3、Yb2O3、PbO、TiO2、In2O3The raw materials are mixed according to the stoichiometric ratio of Sb, Bi, Yb, Pb, Ti and In the formula;
step two: adding a NaCl/KCl mixture with the same mass ratio into the ingredients in the step one, and then putting the mixture into a ball milling tank of a ball mill for mixing and ball milling to obtain powder after ball milling;
step three: presintering the ball-milled powder to obtain presintered powder;
step four: repeatedly cleaning the pre-sintered powder by using deionized water until no Cl ions are detected in the filtrate;
step five: performing secondary ball milling on the powder cleaned by the deionized water, taking the material and drying to obtain dried powder;
step six: adding a PVA solution into the dried powder, grinding and pressing the powder into a thin round blank, and performing plastic removal treatment on the thin round blank to obtain a thin round blank subjected to plastic removal treatment;
step seven: sintering the thin round blank subjected to plastic removal to obtain a sintered ceramic round piece;
step eight: polishing two surfaces of the sintered ceramic wafer, coating Ag electrodes on the two surfaces of the ceramic wafer, carrying out silver firing, and carrying out polarization treatment on the ceramic wafer after silver firing to obtain the piezoelectric ceramic.
Further, in the second step, the mass ratio of NaCl to KCl is 1, the ball milling time is 12h, and the rotating speed of the ball mill is 150 r/min.
Further, in the third step, the presintering temperature is 600 ℃, and the presintering time is 3 hours.
Further, in the fourth step, the temperature of the deionized water is 90 ℃.
Further, in the fifth step, the time of the secondary ball milling is 24 hours, and the rotating speed of the ball mill is 250 r/min.
Further, in the sixth step, the diameter of the thin round billet is 14mm, and the plastic discharge temperature is 600 ℃.
Further, in the seventh step, the sintering temperature is 1020 ℃ and the sintering time is 2 h.
Further, in the eighth step, a direct current electric field of 4kV/mm is applied to the silicone oil at 160 ℃ for 20min to carry out polarization treatment.
By adopting the technical scheme, the bismuth antimonate-bismuth ytterbium acid-lead titanate piezoelectric ceramic material has the advantages of high Curie point and high piezoelectricity, the performance can be guaranteed while the cost is saved by replacing noble metal scandium with metal antimony and metal ytterbium, the lead content is low, the material is environment-friendly, the preparation is simple, the pre-sintering and sintering temperatures are low, and the process is stable.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
FIG. 1 is a dielectric thermogram of a piezoelectric ceramic of bismuth antimonate-bismuth ytterbium acid-lead titanate system according to the present invention.
FIG. 2 is an XRD pattern of the bismuth antimonate-bismuth ytterbium acid-lead titanate piezoelectric ceramic of the present invention.
FIG. 3 is an SEM image of the bismuth antimonate-bismuth ytterbium-lead titanate piezoelectric ceramic of the present invention.
Detailed Description
In order to further explain the technical solution of the present invention, the present invention is explained in detail by the following specific examples.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like, indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are used merely for convenience in describing the present invention and for simplicity in description, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed in a particular orientation, and be operated, and thus, are not to be construed as limiting the present invention. In the description of the present invention, "a plurality" means two or more unless otherwise specified.
The formula of the bismuth antimonate-bismuth ytterbium acid-lead titanate piezoelectric ceramic material is as follows:
xBiSbO3-(1-x-y)BiYbO3-yPbTiO3-z wt％In2O3
wherein x is more than or equal to 0 and less than or equal to 0.1, y is more than or equal to 0.4 and less than or equal to 0.8, and z is more than or equal to 0 and less than or equal to 0.5.
The following are some specific examples of the components of the bismuth antimonate-bismuth ytterbium acid-lead titanate piezoelectric ceramic material of the present invention:
example 1
The molecular formula of the preparation formula is as follows:
xBiSbO3-(1-x-y)BiYbO3-yPbTiO3-z wt％In2O3x is 0.02, y is 0.63, and z is 0.2.
Namely: 0.02BiSbO3-0.35BiYbO3-0.63PbTiO3-0.2wt％In2O3
The preparation method comprises the following steps:
the method comprises the following steps: with Sb2O3、Bi2O3、Yb2O3、PbO、TiO2、In2O3The raw materials are mixed according to the stoichiometric ratio of Sb, Bi, Yb, Pb, Ti and In the formula;
step two: adding a NaCl/KCl salt mixture with the same mass ratio to the ingredients in the step one, wherein the mass ratio of NaCl to KCl is 1, then putting the mixture into a ball milling tank of a ball mill for mixing and ball milling for 12 hours, and the rotating speed of the ball mill is 150r/min to obtain powder after ball milling;
step three: presintering the ball-milled powder for 3 hours at 600 ℃ to obtain presintered powder;
step four: repeatedly washing the pre-sintered powder with deionized water at 90 ℃ until no Cl ions are detected in the filtrate in order to remove NaCl/KCl;
step five: performing secondary ball milling on the powder cleaned by the deionized water for 24 hours at the rotating speed of 250r/min, and then taking the material and drying to obtain dried powder;
step six: adding PVA solution into the dried powder, grinding and pressing the powder into a thin round blank with the diameter of 14mm, and performing plastic removal treatment on the thin round blank at the temperature of 600 ℃ to obtain a thin round blank after the plastic removal treatment;
step seven: sintering the thin round blank subjected to plastic removal at 1020 ℃ for 2h to obtain a sintered ceramic round piece;
step eight: polishing two surfaces of the sintered ceramic wafer, coating Ag electrodes on the two surfaces of the ceramic wafer, burning silver, applying a direct current electric field of 4kV/mm in 160 ℃ silicon oil, keeping for 20min, and carrying out polarization treatment to obtain the formula:
0.02BiSbO3-0.35BiYbO3-0.63PbTiO3-0.2wt％In2O3the piezoelectric ceramic of (1).
The performance parameters are as follows: d33 ═ 420pC/N, kp＝0.52，εr＝1848，tanδ＝1.4％，TC＝395℃。
Example 2
The molecular formula of the preparation formula is as follows:
xBiSbO3-(1-x-y)BiYbO3-yPbTiO3-z wt％In2O3x is 0.02, y is 0.64, and z is 0.2.
The preparation method comprises the following steps:
the method comprises the following steps: with Sb2O3、Bi2O3、Yb2O3、PbO、TiO2、In2O3The raw materials are mixed according to the stoichiometric ratio of Sb, Bi, Yb, Pb, Ti and In the formula;
step two: adding a NaCl/KCl salt mixture with the same mass ratio to the ingredients in the step one, wherein the mass ratio of NaCl to KCl is 1, then putting the mixture into a ball milling tank of a ball mill for mixing and ball milling for 12 hours, and the rotating speed of the ball mill is 150r/min to obtain powder after ball milling;
step three: presintering the ball-milled powder for 3 hours at 600 ℃ to obtain presintered powder;
step four: repeatedly washing the pre-sintered powder with deionized water at 90 ℃ until no Cl ions are detected in the filtrate in order to remove NaCl/KCl;
step five: performing secondary ball milling on the powder cleaned by the deionized water for 24 hours at the rotating speed of 250r/min, and then taking the material and drying to obtain dried powder;
step six: adding PVA solution into the dried powder, grinding and pressing the powder into a thin round blank with the diameter of 14mm, and performing plastic removal treatment on the thin round blank at the temperature of 600 ℃ to obtain a thin round blank after the plastic removal treatment;
step seven: sintering the thin round blank subjected to plastic removal at 1020 ℃ for 2h to obtain a sintered ceramic round piece;
step eight: polishing two surfaces of the sintered ceramic wafer, coating Ag electrodes on the two surfaces of the ceramic wafer, burning silver, applying a direct current electric field of 4kV/mm in 160 ℃ silicon oil, keeping for 20min, and carrying out polarization treatment to obtain the formula:
0.02BiSbO3-0.34BiYbO3-0.64PbTiO3-0.2wt％In2O3the piezoelectric ceramic of (1).
The performance parameters are as follows: d 33-450 pC/N, kp＝0.52，εr＝1966，tanδ＝1.8％，TC＝401℃。
Example 3
The molecular formula of the preparation formula is as follows:
xBiSbO3-(1-x-y)BiYbO3-yPbTiO3-z wt％In2O3x is 0.02, y is 0.65, and z is 0.2.
The preparation method comprises the following steps:
the method comprises the following steps: with Sb2O3、Bi2O3、Yb2O3、PbO、TiO2、In2O3The raw materials are mixed according to the stoichiometric ratio of Sb, Bi, Yb, Pb, Ti and In the formula;
step two: adding a NaCl/KCl salt mixture with the same mass ratio to the ingredients in the step one, wherein the mass ratio of NaCl to KCl is 1, then putting the mixture into a ball milling tank of a ball mill for mixing and ball milling for 12 hours, and the rotating speed of the ball mill is 150r/min to obtain powder after ball milling;
step three: presintering the ball-milled powder for 3 hours at 600 ℃ to obtain presintered powder;
step four: repeatedly washing the pre-sintered powder with deionized water at 90 ℃ until no Cl ions are detected in the filtrate in order to remove NaCl/KCl;
step five: performing secondary ball milling on the powder cleaned by the deionized water for 24 hours at the rotating speed of 250r/min, and then taking the material and drying to obtain dried powder;
step six: adding PVA solution into the dried powder, grinding and pressing the powder into a thin round blank with the diameter of 14mm, and performing plastic removal treatment on the thin round blank at the temperature of 600 ℃ to obtain a thin round blank after the plastic removal treatment;
step seven: sintering the thin round blank subjected to plastic removal at 1020 ℃ for 2h to obtain a sintered ceramic round piece;
step eight: polishing two surfaces of the sintered ceramic wafer, coating Ag electrodes on the two surfaces of the ceramic wafer, burning silver, applying a direct current electric field of 4kV/mm in 160 ℃ silicon oil, keeping for 20min, and carrying out polarization treatment to obtain the formula:
0.02BiSbO3-0.33BiYbO3-0.65PbTiO3-0.2wt％In2O3the piezoelectric ceramic of (1).
The performance parameters are as follows: d33 ═ 400pC/N, kp＝0.52，εr＝1672，tanδ＝1.5％，TC＝408℃。
The bismuth antimonate-bismuth ytterbium acid-lead titanate piezoelectric ceramic material has the advantages of high Curie point and high piezoelectricity, can save cost and ensure performance by replacing noble metal scandium with metal antimony and metal ytterbium, and is low in lead content, friendly to environment, simple to prepare, low in pre-sintering and sintering temperatures and stable in process.
The above description is only for the purpose of illustrating the technical solutions of the present invention and not for the purpose of limiting the same, and other modifications or equivalent substitutions made by those skilled in the art to the technical solutions of the present invention should be covered within the scope of the claims of the present invention without departing from the spirit and scope of the technical solutions of the present invention.
Claims (9)
1. A bismuth antimonate-bismuth ytterbium acid-lead titanate piezoelectric ceramic material is characterized in that: the formula molecular formula is as follows:
xBiSbO3-(1-x-y)BiYbO3-yPbTiO3-z wt％In2O3。
2. the bismuth antimonate-bismuth ytterbium titanate lead-based piezoelectric ceramic material of claim 1, which is characterized in that: x is more than or equal to 0 and less than or equal to 0.1, y is more than or equal to 0.4 and less than or equal to 0.8, and z is more than or equal to 0 and less than or equal to 0.5.
3. A preparation method of a bismuth antimonate-bismuth ytterbium acid-lead titanate piezoelectric ceramic material is characterized by comprising the following steps: which comprises the following steps:
the method comprises the following steps: with Sb2O3、Bi2O3、Yb2O3、PbO、TiO2、In2O3The raw materials are mixed according to the stoichiometric ratio of Sb, Bi, Yb, Pb, Ti and In the formula;
step two: adding a NaCl/KCl salt mixture into the ingredients in the step one, and then putting the mixture into a ball milling tank of a ball mill for mixing and ball milling to obtain powder after ball milling;
step three: presintering the ball-milled powder to obtain presintered powder;
step four: repeatedly cleaning the pre-sintered powder by using deionized water until no Cl ions are detected in the filtrate;
step five: performing secondary ball milling on the powder cleaned by the deionized water, taking the material and drying to obtain dried powder;
step six: adding a PVA solution into the dried powder, grinding and pressing the powder into a thin round blank, and performing plastic removal treatment on the thin round blank to obtain a thin round blank subjected to plastic removal treatment;
step seven: sintering the thin round blank subjected to plastic removal to obtain a sintered ceramic round piece;
step eight: polishing two surfaces of the sintered ceramic wafer, coating Ag electrodes on the two surfaces of the ceramic wafer, carrying out silver firing, and carrying out polarization treatment on the ceramic wafer after silver firing to obtain the piezoelectric ceramic.
4. The method for preparing a bismuth antimonate-bismuth ytterbium acid-lead titanate piezoelectric ceramic material according to claim 3, wherein the method comprises the following steps: in the third step, the presintering temperature is 600 ℃, and the presintering time is 3 hours.
5. The method for preparing a bismuth antimonate-bismuth ytterbium acid-lead titanate piezoelectric ceramic material according to claim 3, wherein the method comprises the following steps: in the fourth step, the temperature of the deionized water is 90 ℃.
6. The method for preparing a bismuth antimonate-bismuth ytterbium acid-lead titanate piezoelectric ceramic material according to claim 3, wherein the method comprises the following steps: in the fifth step, the time of the secondary ball milling is 24 hours, and the rotating speed of the ball mill is 250 r/min.
7. The method for preparing a bismuth antimonate-bismuth ytterbium acid-lead titanate piezoelectric ceramic material according to claim 3, wherein the method comprises the following steps: in the sixth step, the diameter of the thin round billet is 14mm, and the plastic discharge temperature is 600 ℃.
8. The method for preparing a bismuth antimonate-bismuth ytterbium acid-lead titanate piezoelectric ceramic material according to claim 3, wherein the method comprises the following steps: in the seventh step, the sintering temperature is 1020 ℃ and the sintering time is 2 h.
9. The method for preparing a bismuth antimonate-bismuth ytterbium acid-lead titanate piezoelectric ceramic material according to claim 3, wherein the method comprises the following steps: and step eight, applying a direct current electric field of 4kV/mm in 160 ℃ silicone oil, keeping for 20min, and carrying out polarization treatment.
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