CN113776468A - Terahertz film thickness tester - Google Patents
Terahertz film thickness tester Download PDFInfo
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- CN113776468A CN113776468A CN202111086871.6A CN202111086871A CN113776468A CN 113776468 A CN113776468 A CN 113776468A CN 202111086871 A CN202111086871 A CN 202111086871A CN 113776468 A CN113776468 A CN 113776468A
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- terahertz
- test probe
- testee
- tester
- terahertz pulse
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
- G01B15/02—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring thickness
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- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Length Measuring Devices By Optical Means (AREA)
Abstract
The invention discloses a terahertz film thickness tester, and relates to the technical field of terahertz test systems. The tester includes terahertz time domain system host computer and test probe now, test probe is including thick test probe module and MEMS attitude sensor of membrane, thick test probe module with main part both way junction for to the terahertz pulse of testee transmission terahertz pulse and receiving the terahertz pulse of the different interface reflection of testee, MEMS attitude sensor with host computer both way junction is used for detecting the angle between test probe and the testee, the main part calculates according to the time difference between the terahertz pulse of receiving and the terahertz pulse of transmission and the angle between test probe and the testee the thickness of testee surface film. The tester supports simultaneous measurement of 3 layers of film thicknesses at most, the measurement accuracy can reach 0.1 micrometer, and large-angle measurement between the tester and a measured object can be realized.
Description
Technical Field
The invention relates to the technical field of terahertz test systems, in particular to a terahertz film thickness tester capable of measuring at any angle of 0-180 degrees.
Background
The terahertz wave is electromagnetic wave with the frequency within the range of 100GHz-3000GHz, has natural penetrability on nonmetal and nonpolar substances, and is very suitable for detecting human bodies, composite materials and the like. At present, various novel composite materials are in a variety, and the detection of the thickness of the novel materials is a difficult problem, particularly the detection of the thickness of each layer of composite materials in a multi-layer composite material is an extremely difficult problem.
Disclosure of Invention
The invention aims to solve the technical problem of how to provide a terahertz film thickness tester capable of measuring the thickness of a multilayer film and measuring at any angle.
In order to solve the technical problems, the technical scheme adopted by the invention is as follows: the utility model provides a thick tester of terahertz membrane which characterized in that: including terahertz time domain system host computer and test probe now, test probe is including thick test probe module and MEMS attitude sensor of membrane, thick test probe module with main part both way junction for to the terahertz pulse of testee transmission terahertz and receive the terahertz pulse of the different interface reflection of testee, MEMS attitude sensor with host computer both way junction is used for detecting angle between test probe and the testee, the main part calculates according to the time difference between the terahertz pulse of receiving and the terahertz pulse of transmission and the angle between test probe and the testee the thickness of testee surface membrane.
Adopt the produced beneficial effect of above-mentioned technical scheme to lie in: the tester is based on a terahertz time-domain spectroscopy system and an MEMS attitude sensor, terahertz pulses emitted by the terahertz time-domain spectroscopy system are utilized, the thickness of a material is obtained by receiving the terahertz pulses of different composite material interfaces, and the thickness of the material is obtained according to the basic principle that the distance is equal to the speed multiplied by the time based on the flight time of light. The tester is integrated with the MEMS attitude sensor, and the position and the attitude between the tester and a tested object are sensed by the MEMS attitude sensor, so that the thickness of the composite material can be automatically analyzed at a non-vertical angle of the terahertz pulse, namely, the included angle between the terahertz pulse and the interface of the composite material is in the range of 0-180 degrees. In conclusion, the tester supports simultaneous measurement of 3 layers of film thickness at most, the measurement precision can reach 0.1 micron, and large-angle measurement between the tester and a measured object can be realized.
Drawings
The present invention will be described in further detail with reference to the accompanying drawings and specific embodiments.
FIG. 1 is a schematic block diagram of an apparatus according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention are clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced in other ways than those specifically described and will be readily apparent to those of ordinary skill in the art without departing from the spirit of the present invention, and therefore the present invention is not limited to the specific embodiments disclosed below.
As shown in fig. 1, the embodiment of the invention discloses a terahertz film thickness tester, which comprises a terahertz time-domain system host and a test probe, wherein the test probe comprises a film thickness test probe module and an MEMS attitude sensor, the film thickness test probe module is bidirectionally connected with the host and is used for transmitting terahertz pulses to a measured object and receiving terahertz pulses reflected by different interfaces of the measured object, the MEMS attitude sensor is bidirectionally connected with the host and is used for detecting an angle between the test probe and the measured object, and the host calculates the thickness of a surface film of the measured object according to a time difference between the received terahertz pulses and the transmitted terahertz pulses and an angle between the test probe and the measured object.
At present, a terahertz time-domain spectroscopy system is mature, can emit picosecond (pS) terahertz pulses, can generate reflected pulses due to different refractive indexes when the pulses reach an interface of a composite material, the reflected pulses reach a detector of a time-domain pulse system and are detected, and the thickness of a film of the composite material is obtained according to the time difference between the time received by the pulse detector and the time of emission. The basic principle is to measure the time of flight of the light, with the distance equal to the velocity times the time. The MEMS attitude sensor is integrated on the front-end terahertz probe, and the obtained result can be automatically analyzed at different angles to obtain the vertical distance of the optical pulse in the advancing process, namely the thicknesses of different composite layers. On the handheld probe of terahertz pulse, the collection display system can show the thickness of combined material in real time.
In summary, the tester of the present invention has the following features:
1) supporting the measurement of the thickness of 3 layers of films;
2) the precision can reach 0.1 micron;
3) and automatic measurement and analysis are carried out at any angle of 0-180 degrees.
Claims (1)
1. The utility model provides a thick tester of terahertz membrane which characterized in that: including terahertz time domain system host computer and test probe now, test probe is including thick test probe module and MEMS attitude sensor of membrane, thick test probe module with main part both way junction for to the terahertz pulse of testee transmission terahertz and receive the terahertz pulse of the different interface reflection of testee, MEMS attitude sensor with host computer both way junction is used for detecting angle between test probe and the testee, the main part calculates according to the time difference between the terahertz pulse of receiving and the terahertz pulse of transmission and the angle between test probe and the testee the thickness of testee surface membrane.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111086871.6A CN113776468A (en) | 2021-09-16 | 2021-09-16 | Terahertz film thickness tester |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111086871.6A CN113776468A (en) | 2021-09-16 | 2021-09-16 | Terahertz film thickness tester |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113776468A true CN113776468A (en) | 2021-12-10 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202111086871.6A Pending CN113776468A (en) | 2021-09-16 | 2021-09-16 | Terahertz film thickness tester |
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| CN (1) | CN113776468A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114636393A (en) * | 2022-05-23 | 2022-06-17 | 季华实验室 | Chip dielectric layer thickness detection method and device, electronic equipment and storage medium |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013228329A (en) * | 2012-04-26 | 2013-11-07 | Jfe Steel Corp | Surface inspection device and defect measurement method |
| CN105403178A (en) * | 2014-09-09 | 2016-03-16 | 丰田自动车株式会社 | Film thickness measuring device and film thickness measuring method |
| WO2017051579A1 (en) * | 2015-09-25 | 2017-03-30 | 株式会社Ｓｃｒｅｅｎホールディングス | Film thickness measuring device and film thickness measuring method |
-
2021
- 2021-09-16 CN CN202111086871.6A patent/CN113776468A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013228329A (en) * | 2012-04-26 | 2013-11-07 | Jfe Steel Corp | Surface inspection device and defect measurement method |
| CN105403178A (en) * | 2014-09-09 | 2016-03-16 | 丰田自动车株式会社 | Film thickness measuring device and film thickness measuring method |
| WO2017051579A1 (en) * | 2015-09-25 | 2017-03-30 | 株式会社Ｓｃｒｅｅｎホールディングス | Film thickness measuring device and film thickness measuring method |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114636393A (en) * | 2022-05-23 | 2022-06-17 | 季华实验室 | Chip dielectric layer thickness detection method and device, electronic equipment and storage medium |
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