CN113774362A - Machine recovery method after shutdown of PECVD (plasma enhanced chemical vapor deposition) equipment - Google Patents
Machine recovery method after shutdown of PECVD (plasma enhanced chemical vapor deposition) equipment Download PDFInfo
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- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 title claims abstract description 71
- 238000000034 method Methods 0.000 title claims abstract description 46
- 238000011084 recovery Methods 0.000 title claims abstract description 13
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 40
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 25
- 239000010703 silicon Substances 0.000 claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 claims abstract description 23
- 238000007747 plating Methods 0.000 claims abstract description 6
- 238000000151 deposition Methods 0.000 claims description 18
- 230000008021 deposition Effects 0.000 claims description 11
- 238000004088 simulation Methods 0.000 claims description 10
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 2
- 230000015556 catabolic process Effects 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 15
- 230000002411 adverse Effects 0.000 abstract description 10
- 235000012431 wafers Nutrition 0.000 description 27
- 238000010438 heat treatment Methods 0.000 description 9
- 238000001035 drying Methods 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 2
- 239000002274 desiccant Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The application is suitable for the technical field of solar cells and provides a recovery method of PECVD equipment after downtime. The recovery method of the downed PECVD equipment comprises the following steps: baking the carrier plate of the PECVD equipment after the PECVD equipment is reset; plating an amorphous silicon film on the baked carrier plate; and putting the silicon wafer to be processed on a support plate and producing a battery. Therefore, the carrier plate keeps the same state as that in normal production, the influence of interference factors on the performance of the battery is eliminated, the problem that the performance of the battery produced after recovery is poorer than that of the battery produced before shutdown is avoided, and the adverse effect of the shutdown on the performance of the battery is reduced.
Description
Technical Field
The application belongs to the technical field of solar cells, and particularly relates to a recovery method of PECVD equipment after downtime.
Background
In the related art, a PECVD apparatus is generally used to plate a film on a surface of a silicon wafer. And under the condition that the PECVD equipment is shut down for a long time, the carrier plate of the PECVD equipment is placed in a carrier plate cache cavity of the PECVD equipment for caching before resetting, and the battery production is directly carried out after resetting. However, the performance of the cells produced after downtime is inferior compared to the cells produced before downtime. Therefore, how to recover after the shutdown of the PECVD equipment to reduce the adverse effect of the shutdown on the performance of the battery becomes a problem to be solved urgently.
Disclosure of Invention
The application provides a recovery method of a Plasma Enhanced Chemical Vapor Deposition (PECVD) device after shutdown, which aims to solve the problem of how to recover the PECVD device after shutdown so as to reduce the adverse effect of the shutdown on the performance of a battery.
The method for recovering the shutdown of the PECVD equipment comprises the following steps:
baking the carrier plate of the PECVD equipment after the PECVD equipment is reset;
plating an amorphous silicon film on the baked carrier plate;
and placing the silicon wafer to be processed on the support plate and carrying out battery production.
Optionally, in the step of baking the carrier plate of the PECVD apparatus, the baking time period ranges from 1h to 2 h.
Optionally, in the step of baking the carrier plate of the PECVD apparatus, the baking temperature is in a range of 150 ℃ to 250 ℃.
Optionally, plating an amorphous silicon film on the baked carrier plate, including:
introducing SiH into a process cavity of the PECVD equipment4And depositing the amorphous silicon film on the carrier plate.
Optionally, SiH is introduced into the process chamber of the PECVD apparatus4In the step of depositing the amorphous silicon film on the carrier plate, SiH4The flow rate of (b) is in the range of 5000sccm to 10000 sccm.
Optionally, SiH is introduced into the process chamber of the PECVD apparatus4By deposition ofIn the step of forming the amorphous silicon film, the pressure is in the range of 1torr to 2 torr.
Optionally, SiH is introduced into the process chamber of the PECVD apparatus4In the step of depositing the amorphous silicon film, the deposition time is in the range of 10min-40 min.
Optionally, in the step of introducing SiH4 into the process chamber of the PECVD apparatus to deposit the amorphous silicon film, the deposition temperature ranges from 150 ℃ to 250 ℃.
Optionally, the amorphous silicon film has a thickness in a range of 0.5 μm to 2 μm.
Optionally, before the step of placing the silicon wafer to be processed on the carrier plate and performing battery production, the method for recovering the shutdown of the PECVD apparatus includes:
and placing the simulation sheet on the support plate and simulating the production of the battery.
According to the method for recovering the shutdown of the PECVD equipment, the carrier plate of the PECVD equipment is baked and coated with the amorphous silicon, so that the carrier plate is kept in the same state as that in normal production, the influence of interference factors on the performance of the battery is eliminated, the problem that the performance of the battery produced after recovery is poorer than that of the battery produced before shutdown is avoided, and the adverse effect of the shutdown on the performance of the battery is reduced.
Drawings
Fig. 1 is a schematic flowchart of a recovery method after shutdown of PECVD equipment according to an embodiment of the present application;
fig. 2 is a schematic flowchart of a recovery method after shutdown of PECVD equipment according to an embodiment of the present application;
fig. 3 is a schematic flowchart of a recovery method after shutdown of PECVD equipment according to an embodiment of the present application.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application.
Referring to fig. 1, a method for recovering a shutdown of a PECVD apparatus according to an embodiment of the present application includes:
step S13: baking the carrier plate of the PECVD equipment after the PECVD equipment is reset;
step S14: plating an amorphous silicon film on the baked carrier plate;
step S16: and putting the silicon wafer to be processed on a support plate and producing a battery.
According to the method for recovering the shutdown of the PECVD equipment, the carrier plate of the PECVD equipment is baked and coated with the amorphous silicon, so that the carrier plate is kept in the same state as that in normal production, the influence of interference factors on the performance of the battery is eliminated, the problem that the performance of the battery produced after recovery is poorer than that of the battery produced before shutdown is avoided, and the adverse effect of the shutdown on the performance of the battery is reduced.
It can be understood that after the PECVD equipment is shut down, water vapor in the air can be adsorbed by porous amorphous silicon, if normal battery production is directly carried out, the amorphous silicon on the surface of the support plate can cause the surface of a clean silicon wafer to form dirt, a composite center is formed, the minority carrier lifetime is reduced, meanwhile, the specific contact resistance of the silicon wafer and a TCO film deposited subsequently can be increased, the longitudinal transmission loss is caused, the series resistance of a battery is increased, and the efficiency of the battery is reduced.
According to the method for recovering the shutdown of the PECVD equipment, the support plate of the PECVD equipment is baked, so that the support plate is dry, the problem that the performance of the battery is poor due to the fact that amorphous silicon absorbs water vapor is avoided, and the adverse effect of the shutdown on the performance of the battery can be reduced. Meanwhile, the baked carrier plate is plated with the amorphous silicon film, so that the amorphous silicon film can cover potential dirt on the surface of the carrier plate, a normal production coating environment is created, and the adverse effect of downtime on the performance of the battery is further reduced.
In this embodiment, after the PECVD apparatus is reset by the resetting method after shutdown of the PECVD apparatus according to the embodiment of the present application, a Heterojunction cell (HJT) is produced.
It can be understood that, after the PECVD apparatus is reworked by using the reworking method after the shutdown of the PECVD apparatus according to the embodiment of the present application, an emitter and back Passivated Cell (PERC), an Interdigitated back contact Cell 105(Interdigitated back contact) or other types of solar cells can also be produced. The specific type of solar cell produced after the machine is reworked is not limited herein.
Specifically, before step S13, the method for recovering the shutdown of the PECVD apparatus includes: and placing the carrier plate of the PECVD equipment in a carrier plate cache cavity of the PECVD equipment for caching.
Alternatively, in step S13, the baking time period ranges from 1h to 2 h. For example, 1h, 1.1h, 1.2h, 1.3h, 1.4h, 1.5h, 1.6h, 1.7h, 1.8h, 1.9h and 2 h.
So for it is in suitable scope to toast time, can avoid toasting time too short drying that leads to insufficient, thereby avoid remaining steam to produce adverse effect to battery performance, also can avoid toasting time too long efficiency that leads to lower.
Preferably, the baking time period ranges from 1.5h to 1.7 h. For example, 1.5h, 1.51h, 1.53h, 1.58h, 1.6h, 1.62h, 1.65h, 1.68h and 1.7 h. Thus, the full drying and baking efficiency is considered, and the whole effect is the best.
Alternatively, in step S13, the baking temperature is in the range of 150 ℃ to 250 ℃. For example, 150 ℃, 152 ℃, 155 ℃, 160 ℃, 175 ℃, 190 ℃, 200 ℃, 210 ℃, 225 ℃, 230 ℃, 248 ℃ and 250 ℃.
So for the stoving temperature is in suitable scope, can avoid the stoving temperature to hang down the drying that leads to inadequately or dry consuming time too long excessively to avoid remaining steam to produce adverse effect to battery performance, also can avoid the stoving temperature too high to damage the support plate.
Preferably, the baking temperature is in the range of 180 ℃ to 220 ℃. For example, 180 ℃, 182 ℃, 188 ℃, 190 ℃, 195 ℃, 199 ℃, 200 ℃, 205 ℃, 210 ℃, 218 ℃ and 220 ℃. Therefore, the carrier plate is fully dried and protected, and the whole effect is best.
Optionally, before baking the carrier plate, a protective gas may be introduced into the baking chamber. Therefore, the carrier plate or the dirt on the carrier plate is prevented from reacting with the gas in the baking cavity at high temperature by introducing the protective gas. The shielding gas may be an inert gas.
Optionally, a fan may be disposed in the baking chamber, and the fan is activated when the carrier plate is baked. Therefore, the air flow rate in the baking cavity can be increased through the fan, so that the carrier plate is dried more quickly.
Optionally, a desiccant may be disposed within the baking chamber. Therefore, the water vapor baked from the carrier plate can be absorbed by the drying agent, so that the drying environment in the baking cavity is ensured.
Optionally, the top wall of the baking chamber may be provided with a heating lamp tube, and the heating lamp tube may be a quartz glass heating tube. Therefore, the temperature in the baking cavity can be increased by heating the lamp tube.
Further, the number of the heating lamp tubes may be plural. Therefore, the heating speed can be increased by increasing the number of the heating lamp tubes, and the baking efficiency is improved.
Furthermore, the length directions of the plurality of heating lamp tubes are parallel. Therefore, the arrangement rule of the heating lamp tubes ensures that the temperature at all positions of the baking cavity is more uniform.
Optionally, after step S13, the dryness of the carrier board may be tested, and if the dryness is greater than the preset dryness threshold, the process proceeds to step S14; in the case where the dryness is less than or equal to the preset drying threshold, the flow proceeds to step S13. Thus, the carrier plate plated with the amorphous silicon film is ensured to be dry by presetting a drying threshold value.
Referring to fig. 2, optionally, step S14 includes:
step S141: SiH is introduced into a process cavity of PECVD equipment4So as to deposit an amorphous silicon film on the carrier plate.
Therefore, the baked carrier plate is plated with the amorphous silicon film by utilizing the PECVD equipment, the deposition rate is high, the efficiency is high, the formed amorphous silicon film has fewer pinholes, is not easy to crack and has better quality.
Alternatively, in step S14, SiH4The flow rate of (b) is in the range of 5000sccm to 10000 sccm. For example, 5000sccm, 5100sccm, 5800sccm, 6000sccm, 7500sccm, 8000sccm, 8500sccm, 9000sccm, 9500sccm, 10000 sccm. Thus, SiH is allowed4The flow rate of the amorphous silicon film is in a proper range, which is beneficial to ensuring the quality of the amorphous silicon film.
Optionally, in step S14, the pressure range is 1torr to 2 torr. For example, 1torr, 1.1torr, 1.2torr, 1.3torr, 1.4torr, 1.5torr, 1.6torr, 1.7torr, 1.8torr, 1.9torr, 2 torr. Therefore, the pressure is in a proper range, and the quality of the amorphous silicon film is ensured.
Optionally, in step S14, the power range of the PECVD apparatus is 1000w-5000 w. For example, 1000w, 1100w, 1850w, 2000w, 2300w, 2700w, 3000w, 3500w, 4000w, 4300w, 4800w, 5000 w. Therefore, the power of the PECVD equipment is in a proper range, and the quality of the amorphous silicon film is ensured.
Optionally, in step S14, the deposition time period ranges from 10min to 40 min. For example, 10min, 11min, 12min, 15min, 17min, 20min, 22min, 27min, 30min, 35min, 38min, 40 min. Therefore, the deposition time is in a proper range, and the quality of the amorphous silicon film is ensured.
Alternatively, in step S14, the deposition temperature ranges from 150 ℃ to 250 ℃. For example, 150 ℃, 152 ℃, 155 ℃, 160 ℃, 175 ℃, 190 ℃, 200 ℃, 210 ℃, 225 ℃, 230 ℃, 248 ℃ and 250 ℃. Therefore, the deposition temperature is in a proper range, and the quality of the amorphous silicon film is favorably ensured.
Preferably, the deposition temperature is in the range of 180 ℃ to 220 ℃. For example, 180 ℃, 182 ℃, 188 ℃, 190 ℃, 195 ℃, 199 ℃, 200 ℃, 205 ℃, 210 ℃, 218 ℃ and 220 ℃. Thus, the quality of the amorphous silicon film is maximized.
Alternatively, the amorphous silicon film has a thickness in the range of 0.5 μm to 2 μm. For example, 0.5. mu.m, 0.6. mu.m, 0.7. mu.m, 0.9. mu.m, 1. mu.m, 1.2. mu.m, 1.3. mu.m, 1.5. mu.m, 1.6. mu.m, 1.9. mu.m, 2. mu.m. Thus, the thickness of the amorphous silicon film is in a proper range, the situation that the amorphous silicon film cannot cover all dirt due to the fact that the thickness is too small can be avoided, and the situation that the cost is high due to the fact that the thickness is too large can also be avoided.
Preferably, the amorphous silicon film has a thickness in the range of 1.2 μm to 2 μm. For example, 1.2. mu.m, 1.3. mu.m, 1.5. mu.m, 1.6. mu.m, 1.9. mu.m, 2 μm. Thus, both the dirt covering and the cost reduction are considered, and the whole effect is the best.
Referring to fig. 3, optionally, before step S16, the method for recovering the shutdown of the PECVD apparatus includes:
step S15: and putting the simulation sheet on a carrier plate and performing simulated battery production.
Therefore, potential dirt on the surface of the groove of the simulation sheet adhered to the carrier plate can be utilized, and a normal production coating environment can be created.
Specifically, the same batch of silicon wafers may be divided into two groups, one group being used as a simulation wafer, and the other group being used as a silicon wafer to be processed. Therefore, the size, the material, the structure and the like of the simulation sheet and the silicon wafer to be processed are the same, and the production of the simulation battery is the same as that of the normal battery.
In particular, the dummy wafer may be a non-silicon wafer of the same size as the silicon wafer to be processed. In other words, the dummy wafer may be the same size and different material as the silicon wafer to be processed. Therefore, the effect of adhering dirt can be ensured through the same size, the waste of the silicon wafer can be avoided, and the cost is reduced.
In particular, the carrier plate may comprise a plurality of recesses, on each of which a dummy wafer may be placed. So, avoid omitting the recess, can guarantee the effect of dirty adhesion on the whole.
Specifically, the number of simulated battery productions may be multiple times. So, can guarantee that the dirt on support plate recess surface is adhered through increasing the number of times of simulation battery production, guarantee that production coating film environment is normal.
Further, the number of simulated battery productions may be 2-3.
Further, the same set of dummy wafers may be subjected to multiple dummy cell productions. Therefore, the consumption of the analog sheet can be reduced, and the cost is reduced.
Furthermore, the same batch of simulation sheets can be divided into a plurality of groups, and each group of silicon wafers is subjected to one-time simulation cell production. Therefore, the production of the simulated battery is the same as that of the normal battery, and the normal production environment of the coating film is further ensured.
Optionally, in step S16, the silicon wafer to be processed is a silicon wafer to be coated. For example, the silicon wafer to be processed is a silicon wafer with a front film layer to be plated; for another example, the silicon wafer to be processed is a silicon wafer to be plated with a back film layer; for another example, the silicon wafer to be processed is a silicon wafer to be plated with a front film layer and a back film layer.
Comparative example 1 and comparative example 2 in the following table 1 are HJT batteries manufactured after being rebuilt by using a related art rebuilding method, and examples are HJT batteries manufactured after being rebuilt by using a rebuilding method according to examples of the present application.
Obviously, compared with the resetting method in the related art, the resetting method after shutdown of the PECVD equipment in the embodiment of the application has the advantages that the photoelectric conversion efficiency, the short-circuit current and the filling factor of the battery produced after the resetting are higher, the open-circuit voltage is kept flat, the resistance is smaller, and the adverse effect of the shutdown on the performance of the battery is obviously reduced.
TABLE 1
The present invention is not intended to be limited to the particular embodiments shown and described, but is to be accorded the widest scope consistent with the principles and novel features herein disclosed.
Claims (10)
1. A recovery method for a Plasma Enhanced Chemical Vapor Deposition (PECVD) device after shutdown is characterized by comprising the following steps:
baking the carrier plate of the PECVD equipment after the PECVD equipment is reset;
plating an amorphous silicon film on the baked carrier plate;
and placing the silicon wafer to be processed on the support plate and carrying out battery production.
2. The method for recovering the downtime of the PECVD equipment as recited in claim 1, wherein in the step of baking the carrier plate of the PECVD equipment, the baking time is in a range of 1-2 h.
3. The method for repairing a PECVD apparatus in a downtime manner according to claim 1, wherein in the step of baking the carrier plate of the PECVD apparatus, the baking temperature is in a range of 150 ℃ to 250 ℃.
4. The method according to claim 1, wherein the step of plating the baked carrier plate with the amorphous silicon film comprises:
introducing SiH into a process cavity of the PECVD equipment4And depositing the amorphous silicon film on the carrier plate.
5. The method for recovering the downtime of the PECVD equipment as recited in claim 4, wherein SiH is introduced into the process chamber of the PECVD equipment4In the step of depositing the amorphous silicon film on the carrier plate, SiH4The flow rate of (b) is in the range of 5000sccm to 10000 sccm.
6. The method for recovering the downtime of the PECVD equipment as recited in claim 4, wherein SiH is introduced into the process chamber of the PECVD equipment4In the step of depositing the amorphous silicon film, the pressure is in the range of 1torr to 2 torr.
7. The method for recovering the downtime of the PECVD equipment as recited in claim 4, wherein SiH is introduced into the process chamber of the PECVD equipment4In the step of depositing the amorphous silicon film, the deposition time is in the range of 10min-40 min.
8. The method for repairing a breakdown of a PECVD apparatus as recited in claim 4, wherein the step of introducing SiH4 into the process chamber of the PECVD apparatus to deposit the amorphous silicon film is performed at a deposition temperature ranging from 150 ℃ to 250 ℃.
9. The method of claim 1, wherein the thickness of the amorphous silicon film is in the range of 0.5 μm to 2 μm.
10. The method according to claim 1, wherein before the step of placing the silicon wafer to be processed on the carrier plate and performing the battery production, the method comprises:
and placing the simulation sheet on the support plate and simulating the production of the battery.
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