CN113773054A - 一类高Q×f镓酸盐石榴石结构微波介质陶瓷材料及其制备方法 - Google Patents
一类高Q×f镓酸盐石榴石结构微波介质陶瓷材料及其制备方法 Download PDFInfo
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Abstract
本发明公开一种相对介电常数ε在15~17之间,品质因子与谐振频率乘积(Q×f)在80,000~95,000GHz之间,谐振频率温度系数(τf)在‑30~‑28ppm/℃之间的新型镓酸盐石榴石微波介质陶瓷及其制备方法,属于微波介质陶瓷制备技术领域,其化学组成为Ca3TiMGa3O12(M=Nb,Ta)。本发明公开的镓酸盐石榴石结构微波介质陶瓷化学组成及制备工艺简单,可应用于介质谐振器、微波集成电路基片等微波器件的制造。
Description
技术领域
本发明涉及在微波频率使用的介质基板、谐振器与波导回路等微波元器件的介质陶瓷材料及其制备方法。
背景技术
随着5G通信技术、通信网络技术与卫星通讯等现代通信的迅猛发展,人们对现代通信技术材料的小型化、低损耗、低成本及高稳定性的需求进一步增加。微波介质陶瓷作为现代通讯技术的核心元器件,由于其优良的介电常数、高品质因子和低的谐振频率温度系数,作为介质谐振器/滤波器、介质天线、介质导波回路等微波电子元件广泛应用于移动通讯、卫星通讯、全球卫星定位系统、蓝牙设备及无线局域网等微波通讯系统中,设计和发掘具有优良微波介电性质的新型微波介质陶瓷材料是现代通信技术发展的关键。微波介质陶瓷的商业化应用要求其具有低相对介电常数、高品质因子、近零谐振频率温度系数,此外,陶瓷的制造成本和烧结温度也是需要考虑的重要因素。近年来,许多研究发现稀土镓酸盐石榴石陶瓷表现出优异的微波介电性能,例如Sm3Ga5O12,其具相对介电常数为12.3,Q×f为192173GHz,谐振频率温度系数为-19.2。虽然Sm3Ga5O12陶瓷具有优异的综合微波介电性能,然而其在合成温度和制备成本上不具备明显的优势。此外,天然矿物Ca3SnSbFe3O12、Ca3SnSbAl3O12的发现表明,石榴石结构中的八面体中心位置也可以由四、五价正离子共同填补。鉴于上述天然矿物的发现,以及Nb5+ 和Ta5+ 均具有与Sb5+ 相近的离子半径,同时Ti4+ 也具有与Sn4+ 相近的离子半径,因此探索获得新型的、制备成本相对低廉的、Ti4+和M5+(M=Nb,Ta)共占据八面体中心的镓酸盐石榴石结构微波介质陶瓷具有可行性。
发明内容
本发明目的是提供一类新型的高Q×f镓酸盐石榴石结构微波介质陶瓷材料及其制备方法。
本发明涉及的高Q×f镓酸盐石榴石结构微波介质陶瓷材料的化学组成为:Ca3TiMGa3O12,其中M=Nb,Ta。
所述的高Q×f镓酸盐石榴石结构微波介质陶瓷按以下步骤制备:
(1)将CaCO3(99%),TiO2(99%),Nb2O5(99.99%),Ta2O5(99.99%),Ga2O3(99.99%)干燥粉末按Ca3TiMGa3O12(M=Nb,Ta)化学式称量配料;
(2)将步骤(1)中原料混合湿式手磨1-2小时,溶剂为无水乙醇,烘干后在1280℃大气气氛中预烧8小时;
(3)往由步骤(2)制得的粉末再压制成型,将Ca3TiNbGa3O12在1210℃大气气氛中烧结8小时,Ca3TiTaGa3O12在1360℃大气气氛中烧结8小时。
本发明制备的高Q×f微波介质陶瓷Ca3TiMGa3O12(M=Nb,Ta),其制备工艺简单,具有低的相对介电常数(15<εr<17)和良好的品质因子(80000GHz<Q×f<95000GHz),谐振频率温度系数为-30.00ppm/℃<τf<-27.00ppm/℃,可满足低介电常数类介质基板通讯电子元件的应用要求。
附图说明
附图1为本发明2个实施例的X射线衍射图谱
具体实施方式
表1示出了本发明的2个具体实施例及其微波介电性能。其制备方法如上所述,通过粉末X-射线衍射法对烧结后的陶瓷样品进行物相分析,图1是实施例1和2的X射线衍射图谱,表明都形成了单一的石榴石结构物相。用圆柱介质谐振器法进行微波介电性能的评价。
本发明决不限于以上实施例。组成与烧结温度的上下限、区间取值都能实现本发明,在此不一一列举实施例。
本发明可广泛用于各种介质基板、谐振器/滤波器等微波器件的制造,可满足移动通讯、卫星通讯、全球卫星定位系统、蓝牙设备及无线局域网等系统的技术需要。
表1:
Claims (2)
1.本发明公开一种相对εr介电常数在15~17之间,品质因子与谐振频率乘积(Q×f)在80,000~95,000GHz之间,谐振频率温度系数(τf)在-30~-28ppm/℃之间的新型镓酸盐石榴石结构微波介质陶瓷及其制备方法,属于微波介质陶瓷制备技术领域,其化学组成为Ca3TiMGa3O12(M=Nb,Ta)。
2.权利要求1所述的微波介质陶瓷按以下步骤制备:
(1)将CaCO3(99%),TiO2(99%),Nb2O5(99.99%),Ta2O5(99.99%),Ga2O3(99.99%)干燥粉末按Ca3TiMGa3O12(M=Nb,Ta)化学式称量配料;
(2)将步骤(1)中原料混合湿式手磨1-2小时,溶剂为无水乙醇,烘干后将Ca3TiNbGa3O12在1100℃大气气氛中预烧8小时,将Ca3TiTaGa3O12在1200℃大气气氛中预烧8小时;
(3)往由步骤(2)制得的粉末再压制成型,将Ca3TiNbGa3O12在1210℃大气气氛中烧结8小时,将Ca3TiTaGa3O12在1360℃大气气氛中烧结8小时。
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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US5418215A (en) * | 1993-06-22 | 1995-05-23 | The United States Of America As Represented By The Secretary Of The Army | C-axis oriented high temperature superconductors deposited onto single crystals of gadolinium gallium garnet and method of making the same |
JP2012001381A (ja) * | 2010-06-15 | 2012-01-05 | Shin-Etsu Chemical Co Ltd | 単結晶基板および単結晶基板の製造方法 |
CN106830923A (zh) * | 2017-03-24 | 2017-06-13 | 桂林理工大学 | 高品质因数微波介电陶瓷Bi3Y2Ga3O12 |
CN107010924A (zh) * | 2017-03-24 | 2017-08-04 | 桂林理工大学 | 一种温度稳定型镓酸盐微波介电陶瓷 |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5418215A (en) * | 1993-06-22 | 1995-05-23 | The United States Of America As Represented By The Secretary Of The Army | C-axis oriented high temperature superconductors deposited onto single crystals of gadolinium gallium garnet and method of making the same |
JP2012001381A (ja) * | 2010-06-15 | 2012-01-05 | Shin-Etsu Chemical Co Ltd | 単結晶基板および単結晶基板の製造方法 |
CN106830923A (zh) * | 2017-03-24 | 2017-06-13 | 桂林理工大学 | 高品质因数微波介电陶瓷Bi3Y2Ga3O12 |
CN107010924A (zh) * | 2017-03-24 | 2017-08-04 | 桂林理工大学 | 一种温度稳定型镓酸盐微波介电陶瓷 |
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