CN113764489A - Array substrate, manufacturing method of array substrate and display device - Google Patents
Array substrate, manufacturing method of array substrate and display device Download PDFInfo
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- CN113764489A CN113764489A CN202111027829.7A CN202111027829A CN113764489A CN 113764489 A CN113764489 A CN 113764489A CN 202111027829 A CN202111027829 A CN 202111027829A CN 113764489 A CN113764489 A CN 113764489A
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
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- H—ELECTRICITY
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- H10K50/00—Organic light-emitting devices
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- H10K50/805—Electrodes
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- H—ELECTRICITY
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Abstract
The application provides an array substrate, a manufacturing method of the array substrate and a display device, wherein the array substrate comprises a switch device layer, an anode layer and a pixel definition layer, a pixel opening is formed in the pixel definition layer, the anode layer comprises a first electrode and is arranged on the switch device layer, the pixel definition layer is arranged on the first electrode, and part of the first electrode is exposed out of the pixel opening; and the reflecting layer is arranged in the pixel opening, and the edge of the reflecting layer is arranged on the side wall of the pixel opening. The array substrate has the advantages that the reflectivity of the anode layer is improved, so that the luminous efficiency of the array substrate is improved, and the power consumption is not increased while the brightness and the chromaticity of the light-emitting device are improved.
Description
Technical Field
The present disclosure relates to the field of display device technologies, and in particular, to an array substrate, a manufacturing method of the array substrate, and a display device.
Background
Organic Light-Emitting diodes (OLEDs) are widely used in the fields of displays and the like because of their advantages of self-luminescence, high efficiency, low operating voltage, thinness, flexibility, and the like.
Since the anode of the OLED device, especially for the structure of the top-emitting OLED device, is important for preparing a high-efficiency OLED, the anode of the top-emitting device needs to have good energy level matching with the organic functional layer of the OLED and needs to have high reflectivity. According to the light emitting principle of the light emitting device, when the reflectivity of the anode is low, the microcavity effect of the light emitting device is greatly reduced, so that the luminous efficiency of the display area of the light emitting device is greatly reduced, and the display effect is poor due to low luminous efficiency.
Disclosure of Invention
The application provides an array substrate, a manufacturing method of the array substrate and a display device, and aims to solve the problem that a light-emitting device is low in light-emitting efficiency.
In one aspect, the present application provides an array substrate, including switching device layer, anode layer and pixel definition layer, be provided with the pixel trompil on the pixel definition layer, the anode layer includes:
the first electrode is arranged on the switching device layer, the pixel defining layer is arranged on the first electrode, and the first electrode is partially exposed out of the pixel opening;
and the reflecting layer is arranged in the pixel opening, and the edge of the reflecting layer is arranged on the side wall of the pixel opening.
In one possible mode of the present application, the edge of the reflective layer on the sidewall of the pixel opening is lower than half of the height of the pixel opening.
In one possible mode of the present application, the edge of the reflective layer is bent toward a side away from the first electrode, and the edge of the reflective layer is inclined toward a direction away from a center of the pixel opening.
In one possible embodiment of the present application, the anode layer further includes:
and the second electrode is arranged on the reflecting layer and is arranged in the pixel opening.
In one possible implementation manner of the present application, the array substrate further includes:
the light-emitting layer is arranged on the pixel defining layer, and the reflecting layer of the light-emitting layer is arranged in the pixel opening and is abutted against the second electrode;
an electron injection layer disposed on the light emitting layer;
and the cathode layer is arranged on the electron injection layer.
In one possible implementation manner of the present application, the switching device layer includes a substrate, an active layer, a gate insulating layer, a gate layer, an interlayer dielectric layer, a source drain layer, and a planarization layer, which are sequentially stacked;
the flat layer is provided with a through hole, the through hole penetrates through the flat layer, and the source and drain electrode layer is partially positioned in the through hole;
the first electrode is located on the flat layer, and the first electrode covers the inner wall of the through hole and is connected with the source drain layer.
In a possible implementation manner of the application, the source drain comprises a source electrode, the source drain layer and an insulating layer are further arranged between the flat layers, the through hole penetrates through the flat layers and the insulating layer, and the first electrode covers the inner wall of the through hole and is connected with the source electrode.
In one possible implementation manner of the present application, the material of the pixel defining layer is a hydrophobic photoresist material.
In another aspect, the present application further provides a method for manufacturing an array substrate, including:
manufacturing a switching device layer;
manufacturing a first electrode on the switching device layer;
manufacturing a pixel defining layer on the first electrode, wherein a pixel opening is formed in the pixel defining layer, and the first electrode is partially exposed in the pixel opening;
and manufacturing a reflecting layer on the pixel defining layer, wherein the reflecting layer is arranged in the pixel opening and is abutted against the side wall of the pixel opening.
On the other hand, the application also provides a display device which comprises the array substrate.
According to the array substrate, the manufacturing method of the array substrate and the display device, the composite anode layer is arranged separately, the pixel definition layer with the pixel opening is manufactured between the first electrode and the reflection layer, the second electrode layer is arranged on the reflection layer, and the reflection layer is arranged in the pixel opening and abutted to the side wall of the pixel opening, so that the reflectivity of the anode layer is improved, the luminous efficiency of the array substrate is improved, and the effect is reduced while the brightness and the chromaticity of a light-emitting device are improved.
Drawings
The technical solution and other advantages of the present application will become apparent from the detailed description of the embodiments of the present application with reference to the accompanying drawings.
Fig. 1 is a schematic structural diagram of an array substrate according to an embodiment of the present disclosure.
Fig. 2 is a schematic top view of a reflective layer in an array substrate according to an embodiment of the present disclosure.
Fig. 3 is a schematic structural diagram of a second electrode in the array substrate according to an embodiment of the present disclosure.
Fig. 4 is a schematic structural diagram of a second electrode in the array substrate according to the embodiment of the present disclosure.
Fig. 5 is a schematic structural diagram of another embodiment of an array substrate according to the present application.
Fig. 6 is a schematic flow chart illustrating a manufacturing method of an array substrate according to an embodiment of the present disclosure.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the description of the present application, it is to be understood that the terms "first", "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implying any number of technical features indicated. Thus, features defined as "first", "second", may explicitly or implicitly include one or more of the described features. In the description of the present application, "a plurality" means two or more unless specifically limited otherwise.
In this application, unless expressly stated or limited otherwise, the first feature "on" or "under" the second feature may comprise direct contact of the first and second features, or may comprise contact of the first and second features not directly but through another feature in between. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
The following disclosure provides many different embodiments or examples for implementing different features of the application. In order to simplify the disclosure of the present application, specific example components and arrangements are described below. Of course, they are merely examples and are not intended to limit the present application. In addition, examples of various specific processes and materials are provided herein, but one of ordinary skill in the art may recognize applications of other processes and/or use of other materials.
Embodiments of the present invention provide an array substrate, a method for manufacturing the array substrate, and a display device, which are described in detail below.
Referring to fig. 1 to 5, an embodiment of the present invention provides an array substrate including a switching device layer 10, a pixel defining layer 20, and an anode layer 30.
The pixel defining layer 20 is provided with a pixel opening 201.
The anode layer 30 is a composite anode layer 30 comprising a first electrode 31, a reflective layer 32.
The first electrode 31 is disposed on the switching device layer 10, the pixel defining layer 20 is disposed on the first electrode 31, and a portion of the first electrode 31 is exposed in the pixel opening 201. The first electrode 31 may be a transparent electrode, and is made of Indium Tin Oxide (ITO) or Indium Zinc Oxide (IZO), for example.
Referring to fig. 1 and 2, the reflective layer 32 is disposed on the first electrode 31, the reflective layer 32 is disposed in the pixel opening 201, and the edge 321 of the reflective layer 32 is disposed on the sidewall of the pixel opening 201. Specifically, the reflective layer 32 may be made of a metal alloy material, such as Ag alloy or Al alloy, the anode layer 30 has light reflectivity through the arrangement of the reflective layer 32, so that light emitted from the light emitting layer 40 is reflected by the reflective layer 32 and emitted from the upper surface to increase the reflectivity, and the edge 321 of the reflective layer 32 is arranged on the sidewall of the pixel opening 201 to further increase the reflectivity, that is, when the same reflectivity is achieved, the present application may not need to additionally increase power consumption.
According to the array substrate, the manufacturing method of the array substrate and the display device, the composite anode layer 30 is arranged separately, the pixel definition layer 20 with the pixel opening is manufactured between the first electrode 31 layer and the reflection layer 32, and the reflection layer 32 is arranged in the pixel opening 201 and abutted to the side wall of the pixel opening 201, so that the reflectivity of the anode layer 30 is improved, the luminous efficiency of the array substrate is improved, the brightness and the chromaticity of a light-emitting device are improved, and meanwhile, the power consumption is not increased.
In some embodiments, the material of the pixel defining layer 20 is a hydrophobic photoresist material, such as polyimide doped with fluorinated resin, or polymethyl methacrylate doped with fluorinated resin. The sub-pixels can be manufactured by adopting an ink jet printing technology (IJP), because the ink jet printing technology can accurately print out a design pattern under the control of software without using a mask, the utilization rate of raw materials is high, the top luminescence is also favorable for improving the aperture opening ratio, and the manufacturing process can adapt to the ink jet printing technology of the top luminescence by adopting a hydrophobic light resistance material as the material of the pixel defining layer 20.
Of course, it will be understood by those skilled in the art that the pixel defining layer 20 may be made of a hydrophilic material to facilitate the formation of the light emitting layer 40 by an evaporation process in order to accommodate different processes.
In some embodiments, as shown in fig. 1 and 2 in combination, the edge 321 of the reflective layer 32 is bent toward a side away from the first electrode 31 and the edge 321 of the reflective layer 32 is inclined toward a direction away from the center of the pixel opening. The pixel opening 201 has an inclination angle α, specifically, the inclination angle is an inclination angle between a bottom wall and a side wall of the pixel opening 201, the inclination angle α may be in an angle range of 90 ° < α <180 °, and when the depth of the pixel opening 201 is fixed, the larger the inclination angle α, the more the light emitting layer 40 is ensured to be broken at the pixel opening, and the leakage current between sub-pixels is blocked. Because the reflective layer 32 is disposed in the pixel opening 201 and the edge 321 of the reflective layer 32 is disposed on the sidewall of the pixel opening 201, the edge 321 of the reflective layer 32 is bent toward the side away from the first electrode 31, and the bending angle of the edge 321 of the reflective layer 32 is also α, the reflective layer 32 can be better attached to the reflective layer 32, which is also beneficial to improving the reflectivity of the reflective layer 32 and the aperture ratio of the pixel.
In some embodiments, the reflective layer 32 is located at the edge 321 of the sidewall of the pixel opening 201 lower than half the height of the pixel opening 201. Specifically, the edge 321 of the reflective layer 32 is located on the sidewall of the pixel opening 201, and the edge 321 may be located between the length range of 1/3 and 1/2 of the pixel opening 201 to ensure that the pixel defining layer 20 may be in contact with the light emitting material of the light emitting layer 40. Illustratively, the length of the sidewall of the pixel opening 201 is L1, and the length of the edge 32 of the reflective layer 32 is L2, then L2 may be 0.34L1, 0.4L1, 0.5L1, and so on. When the light-emitting layer 40 is formed by an inkjet printing process, the hydrophobicity of the pixel defining layer 20 can prevent the ink from climbing to cause uneven film thickness of the formed light-emitting material, and the light-emitting material can be better retained (holding) in the pixel opening 201, thereby being beneficial to improving the service life and the display effect of the display substrate.
In some embodiments, anode layer 30 also includes a second electrode 33. The second electrode 33 is disposed on the reflective layer 32, and the second electrode 33 is disposed in the pixel opening 201. As shown in fig. 3 or fig. 4, specifically, the second electrode 33 and the reflective layer 32 may have the same structure or different structures, and are not limited herein. As shown in fig. 4, when the second electrode 33 and the reflective layer 32 have the same structure, that is, the second electrode 33 completely covers the reflective layer 32, the same mask can be used for manufacturing the second electrode 33 and the reflective layer 32, which is beneficial to saving the manufacturing process. When the second electrode 33 and the reflective layer 32 have the same structure, the edge 321 of the second electrode 33 on the sidewall of the pixel opening 201 is lower than half of the height of the pixel opening 201, thereby being beneficial to ensuring that the pixel defining layer 20 can contact with the light emitting material of the light emitting layer 40. The materials of the first electrode 31 and the second electrode 33 may be the same, for example, both of the first electrode and the second electrode are Indium Tin Oxide (ITO) or Indium Zinc Oxide (IZO), and the anode layer 30 is configured as a sandwich structure of indium tin oxide/silver/indium tin oxide (ITO/Ag/ITO) to form a completely opaque composite anode structure, thereby being beneficial to enhancing the microcavity effect.
In some embodiments, as shown in fig. 5, the switching device layer 10 is formed by a plurality of Thin Film Transistor (TFT) devices arranged in an array, and specifically, the thin film transistors may be any type of thin film transistors such as Low Temperature Polysilicon (LTPS) thin film transistors or Indium Gallium Zinc Oxide (IGZO) thin film transistors, and are not limited herein.
The switching device layer 10 includes a substrate 11, an active layer 12, a gate insulating layer 13, a gate layer 14, an interlayer dielectric layer 15, a source/drain layer 16, and a planarization layer 17, which are sequentially stacked.
The first electrode 31 is located on the planarization layer 17, and the first electrode 31 covers the inner wall of the through hole 171 and is connected to the source/drain layer 16, for example, the first electrode 31 may be connected to the source 161. The first electrode 31 of the anode layer 30 is connected to the source drain layer 16 in the switching device layer 10, so as to electrically connect the switching device to the sub-pixel, and provide the driving current required by the sub-pixel to emit light.
In some embodiments, an insulating layer 18 is further disposed between the source drain layer 16 and the planarization layer 17, the via 171 penetrates through the planarization layer 17 and the insulating layer 18, and the first electrode 31 covers an inner wall of the via 171 and is connected to the source 161.
In some embodiments, the array substrate further includes a light emitting layer 40, an electron injection layer 50, and a cathode layer 60.
The light emitting layer 40 is an organic light Emitting Layer (EL) disposed on the pixel defining layer 20, and the reflective layer 32 of the light emitting layer 40 is disposed in the pixel opening 201 and abuts against the second electrode 33. The light emitting layer 40 may be formed by evaporation or inkjet printing. The electron injection layer 50 is disposed on the light emitting layer 40. The cathode layer 60 is disposed on the electron injection layer 50.
It is understood that, in some embodiments, a hole injection layer, a hole transport layer, an electron blocking layer, a light emitting layer, a hole blocking layer, an electron transport layer, an electron injection layer, and other film layers may be sequentially stacked between the anode layer 30 and the cathode layer 60, and are not limited in particular.
Referring to fig. 6, the embodiment of the present application further provides a manufacturing method of an array substrate, which includes the following steps S101 to S104.
And S101, manufacturing a switching device layer.
And S102, manufacturing a first electrode on the switching device layer.
S103, manufacturing a pixel definition layer on the first electrode, wherein a pixel opening is formed in the pixel definition layer, and the first electrode is partially exposed in the pixel opening.
S104, manufacturing a reflecting layer on the pixel defining layer, wherein the reflecting layer is arranged in the pixel opening and is abutted against the side wall of the pixel opening.
According to the array substrate, the manufacturing method of the array substrate and the display device, the composite anode layer is arranged separately, the pixel definition layer with the pixel opening is manufactured between the first electrode and the reflection layer, the second electrode layer is arranged on the reflection layer, and the reflection layer is arranged in the pixel opening and abutted to the side wall of the pixel opening, so that the reflectivity of the anode layer is improved, the luminous efficiency of the array substrate is improved, and the power consumption is not increased while the brightness and the chromaticity of the light-emitting device are improved.
In order to better implement the array substrate of the present application, an embodiment of the present application further provides a display device including the array substrate. Since the display device has the array substrate, all the same beneficial effects are achieved, and the description of the embodiment is omitted. The embodiment of the application is not particularly limited to the application of the display device, and the display device can be any product or component with a display function, such as a television, a notebook computer, a tablet computer, a wearable display device (such as an intelligent bracelet, an intelligent watch and the like), a mobile phone, a virtual reality device, an augmented reality device, a vehicle-mounted display, an advertising lamp box and the like.
In the foregoing embodiments, the descriptions of the respective embodiments have respective emphasis, and for parts that are not described in detail in a certain embodiment, reference may be made to related descriptions of other embodiments.
In a specific implementation, each unit or structure may be implemented as an independent entity, or may be combined arbitrarily to be implemented as one or several entities, and the specific implementation of each unit or structure may refer to the foregoing method embodiment, which is not described herein again.
The array substrate, the manufacturing method of the array substrate, and the display device provided in the embodiments of the present application are described in detail above, and specific examples are applied herein to explain the principle and implementation manner of the embodiments of the present application, and the description of the embodiments is only used to help understand the technical solutions and core ideas of the embodiments of the present application; those of ordinary skill in the art will understand that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications or substitutions do not depart from the spirit and scope of the present disclosure as defined by the appended claims.
Claims (10)
1. An array substrate, comprising a switching device layer, an anode layer and a pixel definition layer, wherein the pixel definition layer is provided with a pixel opening, and the anode layer comprises:
the first electrode is arranged on the switching device layer, the pixel defining layer is arranged on the first electrode, and the first electrode is partially exposed out of the pixel opening;
and the reflecting layer is arranged in the pixel opening, and the edge of the reflecting layer is arranged on the side wall of the pixel opening.
2. The array substrate of claim 1, wherein the reflective layer is located at an edge of the sidewall of the pixel opening lower than half of the height of the pixel opening.
3. The array substrate of claim 1, wherein the edge of the reflective layer is bent toward a side away from the first electrode, and the edge of the reflective layer is inclined toward a direction away from a center of the pixel opening.
4. The array substrate of claim 1, wherein the anode layer further comprises:
and the second electrode is arranged on the reflecting layer and is arranged in the pixel opening.
5. The array substrate of claim 4, further comprising:
the light-emitting layer is arranged on the pixel defining layer, and the reflecting layer of the light-emitting layer is arranged in the pixel opening and is abutted against the second electrode;
an electron injection layer disposed on the light emitting layer;
and the cathode layer is arranged on the electron injection layer.
6. The array substrate of claim 1, wherein the switching device layer comprises a substrate, an active layer, a gate insulating layer, a gate layer, an interlayer dielectric layer, a source drain layer and a planarization layer, which are sequentially stacked;
the flat layer is provided with a through hole, the through hole penetrates through the flat layer, and the source and drain electrode layer is partially positioned in the through hole;
the first electrode is located on the flat layer, and the first electrode covers the inner wall of the through hole and is connected with the source drain layer.
7. The array substrate of claim 6, wherein the source drain layer comprises a source electrode, an insulating layer is further disposed between the source drain layer and the flat layer, the through hole penetrates through the flat layer and the insulating layer, and the first electrode covers the inner wall of the through hole and is connected with the source electrode.
8. The array substrate of any one of claims 1-7, wherein the pixel defining layer is made of a hydrophobic photoresist.
9. A manufacturing method of an array substrate is characterized by comprising the following steps:
manufacturing a switching device layer;
manufacturing a first electrode on the switching device layer;
manufacturing a pixel defining layer on the first electrode, wherein a pixel opening is formed in the pixel defining layer, and the first electrode is partially exposed in the pixel opening;
and manufacturing a reflecting layer on the pixel defining layer, wherein the reflecting layer is arranged in the pixel opening and is abutted against the side wall of the pixel opening.
10. A display device comprising the array substrate according to any one of claims 1 to 8.
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