CN113759444A - AR film and preparation method thereof - Google Patents
AR film and preparation method thereof Download PDFInfo
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- CN113759444A CN113759444A CN202110789724.9A CN202110789724A CN113759444A CN 113759444 A CN113759444 A CN 113759444A CN 202110789724 A CN202110789724 A CN 202110789724A CN 113759444 A CN113759444 A CN 113759444A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 238000007747 plating Methods 0.000 claims abstract description 28
- 239000011248 coating agent Substances 0.000 claims abstract description 25
- 238000000576 coating method Methods 0.000 claims abstract description 25
- 239000000463 material Substances 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 15
- 239000010955 niobium Substances 0.000 claims description 38
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 30
- 150000002500 ions Chemical class 0.000 claims description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 20
- 229910052758 niobium Inorganic materials 0.000 claims description 20
- 229910052710 silicon Inorganic materials 0.000 claims description 20
- 229910000484 niobium oxide Inorganic materials 0.000 claims description 18
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 18
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 18
- 229910052786 argon Inorganic materials 0.000 claims description 15
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 12
- 239000001301 oxygen Substances 0.000 claims description 12
- 229910052760 oxygen Inorganic materials 0.000 claims description 12
- 239000007888 film coating Substances 0.000 claims description 8
- 238000009501 film coating Methods 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 6
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 103
- 238000005299 abrasion Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920002635 polyurethane Polymers 0.000 description 2
- 239000004814 polyurethane Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- KZEVSDGEBAJOTK-UHFFFAOYSA-N 1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-2-[5-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]-1,3,4-oxadiazol-2-yl]ethanone Chemical compound N1N=NC=2CN(CCC=21)C(CC=1OC(=NN=1)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)=O KZEVSDGEBAJOTK-UHFFFAOYSA-N 0.000 description 1
- WZFUQSJFWNHZHM-UHFFFAOYSA-N 2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)CC(=O)N1CC2=C(CC1)NN=N2 WZFUQSJFWNHZHM-UHFFFAOYSA-N 0.000 description 1
- JQMFQLVAJGZSQS-UHFFFAOYSA-N 2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]-N-(2-oxo-3H-1,3-benzoxazol-6-yl)acetamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)CC(=O)NC1=CC2=C(NC(O2)=O)C=C1 JQMFQLVAJGZSQS-UHFFFAOYSA-N 0.000 description 1
- VCUFZILGIRCDQQ-KRWDZBQOSA-N N-[[(5S)-2-oxo-3-(2-oxo-3H-1,3-benzoxazol-6-yl)-1,3-oxazolidin-5-yl]methyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C1O[C@H](CN1C1=CC2=C(NC(O2)=O)C=C1)CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F VCUFZILGIRCDQQ-KRWDZBQOSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
- G02B1/113—Anti-reflection coatings using inorganic layer materials only
- G02B1/115—Multilayers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses an AR film and a preparation method thereof, belonging to the technical field of coating, wherein the AR film is formed by alternately stacking a plurality of low-refractive-index film layers and high-refractive-index film layers, all or part of the low-refractive-index film layers are mixed oxides mainly made of low-refractive-index materials, and all or part of the high-refractive-index film layers are mixed oxides mainly made of high-refractive-index materials. According to the invention, through process design, when the low-refractive-index film layer is plated, the high-refractive-index material is added, and when the high-refractive-index film layer is plated, the low-refractive-index material is added to form the mixed oxide film layer, so that the stress is reduced, and the wear resistance is further improved. The invention also adds Al to form a mixed oxide film containing alumina by plating process when plating the film with high and low refractive index, further improving the wear resistance of the product.
Description
Technical Field
The invention belongs to the technical field of coating, and particularly relates to an AR film and a preparation method thereof.
Background
Multilayer optical antireflection films (AR films) are widely used in various industries, such as for display touch covers: the surface is plated with a plurality of optical antireflection films (the film layers with high refractive index and low refractive index which are alternately stacked are 7-10 layers, and the thickness is 200-500 nm), so that the reflectivity of the surface is lower than 1%. The antireflection film is plated on the surface of the touch cover plate, so that the touch cover plate is frequently touched in the use process; in some application scenarios where the touch is high, the AR film is easily rubbed off.
The thin film materials constituting the AR film are typically high and low refractive index materials, such as SiO2, and high refractive index materials, such as Nb2O5, plated by magnetron sputtering. We have found that the abrasion resistance of AR films is better with increasing argon. The increase of the amount of the argon gas means that the ejected Si or Nb atoms are collided more frequently in the process of flying to the substrate, so that the energy reaching the substrate is reduced, the stress of the film is reduced, and the wear resistance of the film is finally improved.
However, with the increase of argon, the uniformity of the thin film is greatly changed, and the requirement of controlling the film thickness is not satisfied. Therefore, it is important to increase the wear resistance of AR by process or material modification.
Disclosure of Invention
The technical problem to be solved by the invention is to provide an AR film with low stress and high wear resistance and a preparation method thereof.
In order to solve the problems, the technical scheme adopted by the invention is as follows:
the invention provides an AR film, which is formed by alternately stacking a plurality of low-refractive-index film layers and high-refractive-index film layers, wherein all or part of the low-refractive-index film layers are mixed oxides mainly made of low-refractive-index materials, and all or part of the high-refractive-index film layers are mixed oxides mainly made of high-refractive-index materials.
Further, the low refractive index film layer is sinbo, wherein sinbo represents a mixed oxide of niobium oxide and silicon oxide mainly containing silicon oxide, and the high refractive index film layer is NbSiOx, wherein NbSiOx represents a mixed oxide of niobium oxide and silicon oxide mainly containing niobium oxide.
Furthermore, the atomic number ratio of Si to Nb in the SiNbOx is 7.75: 1-3.88: 1, and the atomic number ratio of Nb to Si in the NbSiOx is 12.9: 1-6.45: 1.
Further, the low refractive index film layer is SiAlNbOx, wherein SiAlNbOx represents a mixed oxide of silicon oxide mainly containing silicon oxide, aluminum oxide and niobium oxide, and the high refractive index film layer is NbAlSiOx, wherein NblSiOx represents a mixed oxide of niobium oxide mainly containing niobium oxide, aluminum oxide and silicon oxide.
Furthermore, the atomic number ratio of Si, Al and Nb in the SiAlNbOx is 11.9:1: 1-2.98: 1:1, and the atomic number ratio of Nb, Al and Si in the NbSiOx is 19.85:1: 1-4.96: 1: 1.
Furthermore, the AR film is formed by alternately stacking 5-7 low-refractive-index film layers and high-refractive-index film layers, and the outermost layer far away from the surface of the substrate is the low-refractive-index film layer.
The invention provides an AR film preparation method, which comprises a pretreatment step and a film coating step, wherein the pretreatment step is used for cleaning a substrate, and the film coating step comprises the following steps:
coating the low-refractive-index film layer: plating a low-refractive-index film layer on the surface of the substrate or the high-refractive-index film layer;
coating the high-refractive-index film layer: plating a high-refractive-index film layer on the surface of the substrate or the low-refractive-index film layer;
the low refractive index film layer plating step and the high refractive index film layer plating step are alternately carried out to plate a plurality of AR films formed by alternately stacking the low refractive index film layers and the high refractive index film layers, and the film plating step is carried out in vacuum magnetron sputtering film plating equipment;
all or part of the low-refractive-index film layers are mixed oxides mainly made of low-refractive-index materials, and all or part of the high-refractive-index film layers are mixed oxides mainly made of high-refractive-index materials.
Further, the low refractive index film layer plating step is carried out in an oxygen environment, the power of a Si target is 9-12 KW, the power of a Nb target is 1KW, the power of an ICP ion source is 1-4 KW, and the ICP ion source is used for ionization of Si and Nb atoms and argon.
Further, the low refractive index film layer plating step is carried out in an oxygen environment, the power of a Si target is 9-12 KW, the power of an Al target is 1KW, the power of a Nb target is 1KW, the power of an ICP ion source is 1-4 KW, and the ICP ion source is used for ionization of Si and Nb atoms and argon.
Further, the step of coating the high-refractive-index film layer is carried out in an oxygen environment, the power of a Si target is 1KW, the power of a Nb target is 9-12 KW, the power of an ICP ion source is 1-4 KW, and the ICP ion source is used for ionization of Si and Nb atoms and argon.
Further, the step of coating the high-refractive-index film layer is carried out in an oxygen environment, the power of a Si target is 1KW, the power of an Al target is 1KW, the power of a Nb target is 9-12 KW, the power of an ICP ion source is 1-4 KW, and the ICP ion source is used for ionization of Si and Nb atoms and argon.
Adopt the produced beneficial effect of above-mentioned technical scheme to lie in:
according to the invention, through process design, when the low-refractive-index film layer is plated, the high-refractive-index material is added, and when the high-refractive-index film layer is plated, the low-refractive-index material is added to form the mixed oxide film layer, so that the stress is reduced, and the wear resistance is further improved. The invention also adds Al to form a mixed oxide film containing alumina by plating process when plating the film with high and low refractive index, further improving the wear resistance of the product.
Detailed Description
The invention is described in further detail below:
the invention provides an AR film with low film stress and good wear resistance and a preparation method thereof. In order to realize more collisions of target atoms and not change the uniformity of the film, a mode of starting multiple targets for coating simultaneously is adopted, and the target power is controlled.
Example 1
The preparation method of the AR film of this embodiment at least includes a pretreatment step and a coating step, wherein the pretreatment step is used for cleaning a substrate, and the coating step includes:
coating the low-refractive-index film layer: plating a low-refractive-index film layer on the surface of the substrate or the high-refractive-index film layer;
coating the high-refractive-index film layer: plating a high-refractive-index film layer on the surface of the substrate or the low-refractive-index film layer;
and the low-refractive-index film layer plating step and the high-refractive-index film layer plating step are alternately carried out so as to plate a plurality of AR films formed by alternately stacking the low-refractive-index film layers and the high-refractive-index film layers.
Wherein the coating step is carried out in vacuum magnetron sputtering coating equipment;
the low refractive index film coating step is carried out in an oxygen environment, the power of a Si target is 9-12 KW, the power of a Nb target is 1KW, the power of an ICP ion source is 1-4 KW, and the ICP ion source is used for ionization of Si and Nb atoms and argon.
The high-refractive-index film coating step is carried out in an oxygen environment, the power of a Si target is 1KW, the power of a Nb target is 9-12 KW, the power of an ICP ion source is 1-4 KW, and the ICP ion source is used for ionization of Si and Nb atoms and argon.
In this embodiment, the AR film is manufactured by using the plating process and the apparatus, and the manufactured AR film is formed by alternately stacking a plurality of low refractive index film layers and high refractive index film layers, wherein all or part of the low refractive index film layers are mixed oxides mainly containing low refractive index materials, and all or part of the high refractive index film layers are mixed oxides mainly containing high refractive index materials.
The AR film is formed by alternately stacking 5-7 low-refractive-index film layers and high-refractive-index film layers, and the outermost layer far away from the surface of the substrate is the low-refractive-index film layer.
The low refractive index film layer in this embodiment is sinbo, where sinbo represents a mixed oxide of niobium oxide and silicon oxide mainly containing silicon oxide, and the high refractive index film layer is NbSiOx, where NbSiOx represents a mixed oxide of niobium oxide and silicon oxide mainly containing niobium oxide. The atomic number ratio of Si to Nb in the SiNbOx is 7.75: 1-3.88: 1, and the atomic number ratio of Nb to Si in the NbSiOx is 12.9: 1-6.45: 1.
The following tables are a few experimental examples of this example:
from the above table, it can be seen that the target power affects the wear resistance, and the reason for this is that the target power affects the proportion of the mixed oxide, affects the stress, and further affects the wear resistance, and the optimal target power can be selected from the above experimental examples.
The abrasion resistance of the present example was tested by the following method: the edge of the glass was wiped with a dust-free cloth stained with alcohol and polyurethane glue under a force of about 1kg, and the glass was regarded as OK when no peeling occurred 30 times or more.
Example 2
The preparation method of the AR film of this embodiment at least includes a pretreatment step and a coating step, wherein the pretreatment step is used for cleaning a substrate, and the coating step includes:
coating the low-refractive-index film layer: plating a low-refractive-index film layer on the surface of the substrate or the high-refractive-index film layer;
coating the high-refractive-index film layer: plating a high-refractive-index film layer on the surface of the substrate or the low-refractive-index film layer;
and the low-refractive-index film layer plating step and the high-refractive-index film layer plating step are alternately carried out so as to plate a plurality of AR films formed by alternately stacking the low-refractive-index film layers and the high-refractive-index film layers.
Wherein the coating step is carried out in vacuum magnetron sputtering coating equipment;
the low refractive index film coating step is carried out in an oxygen environment, the power of a Si target is 9-12 KW, the power of an Al target is 1KW, the power of a Nb target is 1KW, the power of an ICP ion source is 1-4 KW, and the ICP ion source is used for ionization of Si and Nb atoms and argon.
The high-refractive-index film coating step is carried out in an oxygen environment, the power of a Si target is 1KW, the power of an Al target is 1KW, the power of a Nb target is 9-12 KW, the power of an ICP ion source is 1-4 KW, and the ICP ion source is used for ionization of Si and Nb atoms and argon.
In this embodiment, the AR film is manufactured by using the plating process and the apparatus, and the manufactured AR film is formed by alternately stacking a plurality of low refractive index film layers and high refractive index film layers, wherein all or part of the low refractive index film layers are mixed oxides mainly containing low refractive index materials, and all or part of the high refractive index film layers are mixed oxides mainly containing high refractive index materials.
The AR film is formed by alternately stacking 5-7 low-refractive-index film layers and high-refractive-index film layers, and the outermost layer far away from the surface of the substrate is the low-refractive-index film layer.
The low refractive index film layer in this embodiment is sialnbo, where sialnbo represents a mixed oxide of silicon oxide mainly containing silicon oxide, aluminum oxide, and niobium oxide, and the high refractive index film layer is NbAlSiOx, where NblSiOx represents a mixed oxide of niobium oxide mainly containing niobium oxide, aluminum oxide, and silicon oxide. The atomic number ratio of Si, Al and Nb in SiAlNbOx is 11.9:1: 1-2.98: 1:1, and the atomic number ratio of Nb, Al and Si in NbSiOx is 19.85:1: 1-4.96: 1: 1.
The following tables are a few experimental examples of this example:
| silicon target power (KW) | Niobium target power (KW) | Aluminum target power (kw) | Abrasion resistance (times) | |
| Experimental example 1 | 10 | 1 | 1 | 22 |
| Experimental example 2 | 10 | 2 | 1 | 30 |
| Experimental example 3 | 9 | 2 | 1 | 42 |
| Experimental example 4 | 1 | 10 | 1 | 14 |
| Experimental example 5 | 2 | 10 | 1 | 27 |
| Experimental example 6 | 2 | 9 | 1 | 33 |
From the above table, it can be seen that the target power affects the wear resistance, and the reason for this is that the target power affects the proportion of the mixed oxide, affects the stress, and further affects the wear resistance, and the optimal target power can be selected from the above experimental examples.
The abrasion resistance of the present example was tested by the following method: the edge of the glass was wiped with a dust-free cloth stained with alcohol and polyurethane glue under a force of about 1kg, and the glass was regarded as OK when no peeling occurred 30 times or more.
Claims (11)
1. An AR film, characterized in that: the AR film is formed by alternately stacking a plurality of low-refractive-index film layers and high-refractive-index film layers, all or part of the low-refractive-index film layers are mixed oxides mainly made of low-refractive-index materials, and all or part of the high-refractive-index film layers are mixed oxides mainly made of high-refractive-index materials.
2. The AR film of claim 1, wherein: the low-refractive-index film layer is SiNbOx, wherein SiNbOx represents a mixed oxide of niobium oxide and silicon oxide mainly containing silicon oxide, and the high-refractive-index film layer is NbSiOx, wherein NbSiOx represents a mixed oxide of niobium oxide and silicon oxide mainly containing niobium oxide.
3. An AR film according to claim 2, wherein: the atomic number ratio of Si to Nb in the SiNbOx is 7.75: 1-3.88: 1, and the atomic number ratio of Nb to Si in the NbSiOx is 12.9: 1-6.45: 1.
4. The AR film of claim 1, wherein: the low-refractive-index film layer is SiAlNbOx, wherein SiAlNbOx represents a mixed oxide of silicon oxide mainly comprising silicon oxide, aluminum oxide and niobium oxide, and the high-refractive-index film layer is NbAlSiOx, wherein NblSiOx represents a mixed oxide of niobium oxide mainly comprising niobium oxide, aluminum oxide and silicon oxide.
5. The AR film of claim 4, wherein: the atomic number ratio of Si, Al and Nb in SiAlNbOx is 11.9:1: 1-2.98: 1:1, and the atomic number ratio of Nb, Al and Si in NbSiOx is 19.85:1: 1-4.96: 1: 1.
6. An AR film according to any one of claims 1 to 5, wherein: the AR film is formed by alternately stacking 5-7 low-refractive-index film layers and high-refractive-index film layers, and the outermost layer far away from the surface of the substrate is the low-refractive-index film layer.
7. The preparation method of the AR film is characterized by comprising a pretreatment step and a film coating step, wherein the pretreatment step is used for cleaning a substrate, and the film coating step comprises the following steps:
coating the low-refractive-index film layer: plating a low-refractive-index film layer on the surface of the substrate or the high-refractive-index film layer;
coating the high-refractive-index film layer: plating a high-refractive-index film layer on the surface of the substrate or the low-refractive-index film layer;
the low refractive index film layer plating step and the high refractive index film layer plating step are alternately carried out to plate a plurality of AR films formed by alternately stacking the low refractive index film layers and the high refractive index film layers, and the film plating step is carried out in vacuum magnetron sputtering film plating equipment;
all or part of the low-refractive-index film layers are mixed oxides mainly made of low-refractive-index materials, and all or part of the high-refractive-index film layers are mixed oxides mainly made of high-refractive-index materials.
8. The method for preparing an AR film according to claim 7, wherein the step of coating the low refractive index film is performed in an oxygen environment, the power of a Si target is 9-12 KW, the power of a Nb target is 1KW, the power of an ICP ion source is 1-4 KW, and the ICP ion source is used for ionization of Si and Nb atoms and argon.
9. The method for preparing an AR film according to claim 7, wherein the step of coating the low refractive index film is performed in an oxygen environment, the power of a Si target is 9-12 KW, the power of an Al target is 1KW, the power of a Nb target is 1KW, the power of an ICP ion source is 1-4 KW, and the ICP ion source is used for ionization of Si and Nb atoms and argon.
10. The method of claim 7, wherein the step of coating the high refractive index film is performed in an oxygen atmosphere, the power of the Si target is 1KW, the power of the Nb target is 9-12 KW, the power of the ICP ion source is 1-4 KW, and the ICP ion source is used for ionization of Si and Nb atoms and argon gas.
11. The method of claim 7, wherein the step of coating the high refractive index film layer is performed in an oxygen environment, the power of the Si target is 1KW, the power of the Al target is 1KW, the power of the Nb target is 9 to 12KW, the power of the ICP ion source is 1 to 4KW, and the ICP ion source is used for ionization of Si and Nb atoms and argon gas.
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