CN113745318B - Power supply overheating protection circuit and calibration method thereof - Google Patents
Power supply overheating protection circuit and calibration method thereof Download PDFInfo
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- CN113745318B CN113745318B CN202111032330.5A CN202111032330A CN113745318B CN 113745318 B CN113745318 B CN 113745318B CN 202111032330 A CN202111032330 A CN 202111032330A CN 113745318 B CN113745318 B CN 113745318B
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- 238000013021 overheating Methods 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 title claims description 27
- 238000002347 injection Methods 0.000 claims abstract description 75
- 239000007924 injection Substances 0.000 claims abstract description 75
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 239000002184 metal Substances 0.000 claims description 45
- 229910052751 metal Inorganic materials 0.000 claims description 45
- 238000001514 detection method Methods 0.000 claims description 22
- 238000012360 testing method Methods 0.000 claims description 8
- 238000002513 implantation Methods 0.000 description 24
- 238000002955 isolation Methods 0.000 description 7
- 239000000243 solution Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000012858 packaging process Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 2
- 230000002452 interceptive effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 241000220317 Rosa Species 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K13/00—Thermometers specially adapted for specific purposes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H5/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection
- H02H5/04—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection responsive to abnormal temperature
- H02H5/044—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection responsive to abnormal temperature using a semiconductor device to sense the temperature
Abstract
The invention discloses a power supply overheating protection circuit, which comprises a control module and a temperature acquisition module, wherein the temperature acquisition module comprises a power supply management chip and a temperature control chip packaged with the power supply management chip, the temperature control chip comprises a substrate, first injection regions formed in the substrate at intervals, second injection regions positioned between the first injection regions, third injection regions positioned between the second injection regions, fourth injection regions positioned between the third injection regions, a dielectric layer positioned on the upper surface of the substrate, and a first electrode and a second electrode which penetrate through the dielectric layer and are respectively arranged corresponding to the second injection regions and the third injection regions, the power supply management chip is formed in the substrate and is connected with the dielectric layer, when the temperature of the temperature control chip rises, the control module detects that the voltage drop between the first electrode and the second electrode changes, and if the temperature exceeds the preset temperature for safe operation of the power supply management chip, and controlling the power management chip to be switched off. The promotion effectively protects the power supply overheating circuit, and the requirement of a high-precision power supply on temperature fluctuation is met.
Description
Technical Field
The invention relates to the technical field of power supply management, in particular to a power supply overheat protection circuit and a calibration method thereof.
Background
With the development of electronic technology, the system power is higher and higher, and the heat generation is also more and more serious, and the excessive heat can cause the damage of the power supply, thereby causing the system downtime or other dangers. The conventional power supply overheating protection mainly detects the temperature of a power supply system through a thermosensitive element or other temperature, and then converts the temperature into an electric signal to finally determine the on-off of a power supply. The signal transmission feedback speed of the method is too low to meet the requirement of a high-precision power supply on temperature fluctuation. Meanwhile, because the power management modules are all packaged finished products, different packages have great influence on heat dissipation, if the packages are poor, heat generated by chips of the power management modules cannot be dissipated timely, the externally detected temperature is not the true temperature of the power modules, the external temperature is not high, but the power chips are possibly burnt out, and therefore the circuit overheating protection effect is influenced.
Disclosure of Invention
In view of the above-mentioned technical problems, the present invention provides a power supply overheat protection circuit capable of detecting the temperature of a power supply management chip in real time and having a high integration level, and a calibration method thereof, and is specifically implemented by using the following technical scheme.
In a first aspect, the present invention provides a power supply overheat protection circuit, including:
a control module;
the temperature acquisition module is connected with the control module and comprises a power management chip and a temperature control chip packaged and arranged with the power management chip, wherein the temperature control chip comprises a substrate of a first conduction type, first injection regions of a second conduction type formed in the substrate at intervals, a second injection region of the first conduction type positioned between the first injection regions and connected with the first injection regions, a third injection region of the second conduction type positioned between the second injection regions and connected with the second injection regions, a fourth injection region of the first conduction type positioned between the third injection regions and connected with the third injection regions, a dielectric layer positioned on the upper surface of the substrate, and first electrodes, second electrodes, third electrodes and third electrodes, second electrodes, third electrodes, second electrodes, third electrodes, second electrodes, third electrodes, second electrodes, third electrodes, second electrodes, third electrodes, second electrodes and fourth electrodes, third electrodes and fourth electrodes, second electrodes, fourth electrodes, third electrodes, second electrodes, third electrodes, second electrodes, third electrodes, second electrodes, third electrodes, second electrodes, third electrodes, second electrodes, third electrodes, second electrodes, third electrodes, second electrodes, third electrodes, second electrodes, third electrodes, a second electrode, the power management chip being formed within the substrate and connected to the dielectric layer;
when the temperature of the temperature control chip rises, the control module detects that the voltage drop between the first electrode and the second electrode changes, the temperature of the power management chip is judged, and if the temperature exceeds the preset temperature for safe work of the power management chip, the control module controls the power management chip to be turned off.
As a further improvement of the above technical solution, the power supply overheat protection circuit further includes:
the load is connected with the temperature acquisition module, and the temperature acquisition module is used for carrying out power supply overheating protection on the load.
As a further improvement of the above technical solution, the first conductivity type is P-type, the second conductivity type is N-type, the first injection region and the third injection region are N-well injection regions, and the second injection region and the fourth injection region are P-well injection regions.
As a further improvement of the above technical solution, the implantation regions of each well are annularly implanted, the doping concentrations of the first implantation region and the third implantation region are the same, and the doping concentrations of the second implantation region and the fourth implantation region are the same.
As a further improvement of the above technical solution, the temperature control chip further includes a first metal region connected to the first electrode and a second metal region connected to the second electrode, and the first metal region and the second metal region are located on two sides of the injection region of each well.
In a second aspect, the present invention further provides a method for calibrating a power supply overheat protection circuit, including the following steps:
connecting the temperature control chip with the power management chip through a metal strip;
when a wafer is tested, the first metal area and the second metal area of the temperature control chip are respectively connected with an external test module, and the temperature control chip is heated to detect the change condition of the voltage between the first metal area and the second metal area along with the temperature to obtain a detection result;
and the control module determines the detection temperature of the power management chip according to the detection result.
As a further improvement of the above technical solution, after the control module determines the detected temperature of the power management chip according to the detection result, the method further includes:
and after the calibration is finished, fusing the metal strip in a burning and adjusting mode, wherein the metal strip is used for keeping the temperature of the temperature control chip and the temperature of the power management chip to be the same.
As a further improvement of the above technical solution, the temperature control chip and the power management chip are integrated on the same chip and use the same capping process;
when the temperature of the power management chip exceeds the safe working temperature, the temperature control chip outputs different currents and sends the currents to the control module, and the control module sends an instruction to the power management chip to enable the power management chip to work at the safe working temperature.
The invention provides a power supply overheating protection circuit and a calibration method thereof, and compared with the prior art, the power supply overheating protection circuit has the following beneficial effects:
the temperature control chip and the power management chip are integrated on the same chip, the same packaging process is used, the temperature control chip can detect the temperature of the power management chip in real time, the integration level of the chip is also improved, the temperature control chip outputs signals to the detection module, the detection module directly controls the power management chip, the detection temperature of the power management chip can be acquired in real time in low time delay, and the reliability of power management and the timeliness of power supply overheating protection are improved. The injection regions of wells in each injection region in the temperature control chip are annular, the outer ring of the device is a well of the second conduction type, the isolation effect can be achieved, meanwhile, the stability of the annular process is high, the injection regions of different conduction types are arranged in the substrate at intervals, a similar super junction structure can be formed, the voltage resistance of the device can be improved, voltage spikes are not easy to occur, and the working reliability of the device is improved. The first injection region is an outer isolation ring, and can prevent signals such as external noise from interfering the chip. Control by temperature change chip and power management chip have the same temperature variation, when the temperature of control by temperature change chip rose, control module can detect control by temperature change chip electrode and be the voltage drop change between first electrode and the second electrode, thereby judge the degree that the temperature rose, it is the temperature of power management chip to have confirmed this temperature, if detect the temperature and surpass the safe operating temperature of power management chip, control module can control the shutoff of power management chip, it carries out effective protection to power overheat circuit to have promoted, the requirement of high accuracy power to the temperature fluctuation has also been satisfied simultaneously.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.
Fig. 1 is a block diagram of a power supply overheat protection circuit according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a temperature control chip according to an embodiment of the present invention;
FIG. 3 is a top view of a temperature control chip according to an embodiment of the present invention;
FIG. 4 is a calibration block diagram of a power supply overheat protection circuit according to an embodiment of the present invention;
fig. 5 is a flowchart of a method for calibrating a power overheat protection circuit according to an embodiment of the invention.
The main element symbols are as follows:
10-a control module; 20-a temperature acquisition module; 30-a power management chip; 40-temperature control chip; 41-a substrate; 42-a first implanted region; 43-a second implanted region; 44-a third implanted region; 45-a fourth implanted region; 46-a dielectric layer; 47-a first electrode; 48-a second electrode; 50-load; 60-a first metal region; 70-a second metal region; 80-metal strips.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the accompanying drawings are illustrative only for the purpose of explaining the present invention, and are not to be construed as limiting the present invention.
It will be understood that when an element is referred to as being "secured to" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. In contrast, when an element is referred to as being "directly on" another element, there are no intervening elements present. The terms "vertical," "horizontal," "left," "right," and the like as used herein are for illustrative purposes only.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
Referring to fig. 1, the present invention provides a power supply overheat protection circuit, including:
a control module 10;
a temperature acquisition module 20 connected to the control module 10, wherein the temperature acquisition module 20 includes a power management chip 30 and a temperature control chip 40 packaged with the power management chip 30, the temperature control chip 40 includes a substrate 41 of a first conductivity type, first injection regions 42 of a second conductivity type formed at intervals in the substrate 41, second injection regions 43 of the first conductivity type located between the first injection regions 42 and connected to the first injection regions 42, third injection regions 44 of the second conductivity type located between the second injection regions 43 and connected to the second injection regions 43, fourth injection regions 45 of the first conductivity type located between the third injection regions 44 and connected to the third injection regions 44, a dielectric layer 46 located on an upper surface of the substrate 41, and a plurality of dielectric layers 46 respectively connected to the second injection regions 43, The third injection region 44 is correspondingly provided with a first electrode 47 and a second electrode 48 which are arranged at intervals, and the power management chip 30 is formed in the substrate 41 and connected with the dielectric layer 46;
when the temperature of the temperature control chip 40 rises, the control module 10 detects that the voltage drop between the first electrode 47 and the second electrode 48 changes, determines the temperature of the power management chip 30, and if the temperature exceeds a preset temperature for safe operation of the power management chip 30, the control module 10 controls the power management chip 30 to turn off.
In this embodiment, the control module 10 may be a central processing unit or a microprocessor, the power management chip 30 is usually manufactured by a standard CMOS process, a BiCMOS process, a BCD process, or the like, and the power management chip 30 has the characteristics of high efficiency, low power consumption, and intelligence. The temperature control chip 40 and the power management chip 30 are integrated on the same chip, the same packaging process is used, the temperature acquisition module 20 is further connected with the load 50, the temperature acquisition module 20 is used for performing power supply overheating protection on the load, namely the temperature acquisition module 20 and the load 50 are connected into the same circuit, the integration level of the power management circuit is improved, and the temperature acquisition module has low time delay and can acquire temperature data of the chip in real time.
It should be noted that the first conductivity type is a P-type, the second conductivity type is an N-type, the first implantation region 42 and the third implantation region 44 are N-well implantation regions, and the second implantation region 43 and the fourth implantation region 45 are P-well implantation regions. The power management chip 30 and the temperature control chip 40 share a substrate 41, the first injection region 42 is close to the power management chip 30, the first injection region 42 and the substrate 41 have different conductive types and can play a role in isolation, the first injection region 42, the second injection region 43 and the third injection region 44 are respectively and symmetrically arranged relative to the fourth injection region 45, the conductive types of the two adjacent injection regions are different, and a plurality of PN junctions can be formed to improve the voltage withstanding performance of the device.
Optionally, the implantation regions of each well are ring-shaped implants, the doping concentrations of the first implantation region 42 and the third implantation region 44 are the same, and the doping concentrations of the second implantation region 43 and the fourth implantation region 45 are the same. The temperature-controlled chip 40 further includes a first metal region 60 connected to the first electrode 47 and a second metal region 70 connected to the second electrode 48, and the first metal region 60 and the second metal region 70 are located at two sides of the implantation region of each well.
Referring to fig. 2 and 3, in the present embodiment, the first implantation region 42, the second implantation region 43, the third implantation region 44 and the fourth implantation region 45 are well implantation regions and are ring implantation regions, the N-type semiconductor and the P-type semiconductor respectively represent impurity-free doping, N-type impurity (P, As) doping and P-type impurity (B, Ga) doping, and the P-type region is diffused on the N-type substrate and is called As a P-well region; the diffusion of N-type regions on P-type substrates is referred to as N-well regions. The injection regions of all the well regions are annular, the outermost ring of the device is of an N type, the conductive type of the substrate 41 is of a P type, the isolation effect is achieved, and the annular process has the characteristic of high stability, so that voltage spikes are not prone to occurring, and the reliability of the device is improved. The first injection region 42 is an outside isolation N-shaped ring, which can prevent noise and other signals from interfering the chip, the first electrode 47 is a P-well surface electrode, the second electrode 48 is an N-well surface electrode, two ends of each ring, namely the first metal region 60 and the second metal region 70, are used for leading out metal electrodes and connecting to metal Pad, the first metal region 60 is isolated from the well by the dielectric layer 46, and similarly, the second metal region 70 is isolated from the well by the dielectric layer 46, so as to improve the working stability of the device.
Referring to fig. 4 and 5, the invention further provides a power supply overheat protection circuit calibration method, including the following steps:
s1: the temperature control chip 40 is connected with the power management chip 30 through a metal strip 80;
s2: when a wafer test is performed, the first metal area 60 and the second metal area 70 of the temperature control chip 40 are respectively connected with an external test module, and the temperature control chip 40 is heated to detect the change condition of the voltage between the first metal area 60 and the second metal area 70 along with the temperature, so as to obtain a detection result;
s3: the control module 10 determines the detected temperature of the power management chip 30 according to the detection result.
In this embodiment, the temperature control chip 40 and the power management chip 30 are located in the same chip, and the same package is used, the monitoring chip 40 and the power management chip 30 have the same temperature change, when the temperature of the temperature control chip 40 rises, the control module 10 can detect the change of the voltage drop between the first electrode 47 and the second electrode 48 of the temperature control chip 40, thereby determining the degree of temperature rise, the obtained detected temperature is the temperature of the power management chip 30, if the detected temperature exceeds the safe working temperature of the power management chip 30, the control module 10 can control the power management chip 30 to be turned off, so as to avoid the problem that the circuit is damaged due to overheating.
It should be noted that, the temperature-controlled chip 40 has two electrodes, namely the first electrode 47 and the second electrode 48, when the temperature-controlled chip 40 is manufactured by using different chip manufacturing processes, the sensitivity of the temperature-controlled chip 40 to temperature is different, that is, when the external temperature changes, the voltage drop between the first electrode 47 and the second electrode 48 is different in amplitude, and the doping concentration of each well also affects the voltage withstanding performance of the device.
It should be understood that the temperature control chip 40 and the power management chip 30 are connected by a metal strip 80, and the metal strip 80 is used for keeping the temperature of the temperature control chip 40 and the temperature of the power management chip 30 consistent during calibration so as to ensure better and more accurate detection. When a wafer test is performed, the first electrode 47 and the second electrode 48 are respectively connected to an external test module, and then the temperature control chip 40 is heated, a detection result is obtained by detecting a culture condition of the voltage between the first electrode 47 and the second electrode 48 along with the temperature, the detection result is a set of data of the voltage along with the temperature change, generally speaking, the temperature control chip 40 is produced by using the same IC manufacturing process, the set of data is unchanged, that is, the test result of each time is basically the same, the test only needs to be performed once, the detection result is input to the control module 10, the control module 10 can judge the temperature of the power management chip 30 according to the measured data, and real-time temperature detection can be performed on the power management chip 30.
Optionally, after the control module 10 determines the detected temperature of the power management chip 30 according to the detection result, the method further includes:
s4: after the calibration is completed, the metal strip 80 is fused by a burning and adjusting method, and the metal strip 80 is used for keeping the temperature of the temperature control chip 40 and the temperature of the power management chip 30 to be the same.
In this embodiment, the temperature control chip 40 and the power management chip 30 are integrated on the same chip and use the same capping process, when the temperature of the power management chip 30 exceeds the safe working temperature, the temperature control chip 40 outputs different currents and sends the currents to the control module 10, and the control module 10 sends an instruction to the power management chip 30, so that the power management chip 30 keeps working at the safe working temperature. The fusing of the metal strip 80 can prevent the internal potential of the chip from being affected by the temperature control chip 40 when the chip is actually used.
It should be noted that, the power management chip 30 and the temperature control chip 40 are integrated together and packaged in the same way, so that the problem of timely protection of the power management chip 30 due to overheating can be solved well, the accuracy of real-time detection of the power management chip 30 can be improved in the calibration process of the power overheating protection circuit, and the working reliability of the power management chip 30 can also be improved.
The invention provides a power supply overheating protection circuit and a calibration method thereof, wherein a temperature control chip 40 and a power supply management chip 30 are integrated on the same chip, the same packaging process is used, the temperature control chip 40 can detect the temperature of the power supply management chip 30 in real time, the integration level of the chip is also improved, the temperature control chip 40 outputs a signal to a detection module 10, the detection module 10 directly controls the power supply management chip 30, the time delay is low, the detection temperature of the power supply management chip 30 can be obtained in real time, and the reliability of power supply management and the timeliness of power supply overheating protection are improved. The injection regions with wells in the temperature control chip 40 are annular, the outer ring of the device is a well of the second conduction type, so that the isolation effect can be achieved, meanwhile, the stability of the annular process is high, the injection regions of different conduction types are arranged in the substrate 41 at intervals, a similar super junction structure can be formed, the voltage resistance of the device can be improved, voltage spikes are not easy to occur, and the working reliability of the device is improved. The first implantation region 42 is an outer isolation ring, which can prevent the interference of signals such as external noise to the chip. The temperature control chip 40 and the power management chip 30 have the same temperature change, when the temperature of the temperature control chip 40 rises, the control module 10 can detect the change of the voltage drop between the electrodes of the temperature control chip 40, namely the first electrode 47 and the second electrode 48, thereby judging the rising degree of the temperature, the temperature is determined as the temperature of the power management chip 30, if the detected temperature exceeds the safe working temperature of the power management chip 30, the control module 10 can control the power management chip 30 to be turned off, the effective protection of the power overheating circuit is promoted, and meanwhile, the requirement of the high-precision power supply on temperature fluctuation is met.
In all examples shown and described herein, any particular value should be construed as exemplary only and not as a limitation, and thus other examples of example embodiments may have different values.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.
The above examples are merely illustrative of several embodiments of the present invention, and the description thereof is more specific and detailed, but not to be construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention.
Claims (5)
1. A power supply overheat protection circuit comprising:
a control module;
the temperature acquisition module is connected with the control module and comprises a power management chip and a temperature control chip packaged and arranged with the power management chip, wherein the temperature control chip comprises a substrate of a first conduction type, first injection regions of a second conduction type formed in the substrate at intervals, a second injection region of the first conduction type positioned between the first injection regions and connected with the first injection regions, a third injection region of the second conduction type positioned between the second injection regions and connected with the second injection regions, a fourth injection region of the first conduction type positioned between the third injection regions and connected with the third injection regions, a dielectric layer positioned on the upper surface of the substrate, and first electrodes, second electrodes, third electrodes and third electrodes, second electrodes, third electrodes, second electrodes, third electrodes, second electrodes, third electrodes, second electrodes, third electrodes, second electrodes, third electrodes, second electrodes and fourth electrodes, third electrodes and fourth electrodes, second electrodes, fourth electrodes, third electrodes, second electrodes, third electrodes, second electrodes, third electrodes, second electrodes, third electrodes, second electrodes, third electrodes, second electrodes, third electrodes, second electrodes, third electrodes, second electrodes, third electrodes, second electrodes, third electrodes, a second electrode, the power management chip being formed within the substrate and connected to the dielectric layer;
when the temperature of the temperature control chip rises, the control module detects that the voltage drop between the first electrode and the second electrode changes, the temperature of the power management chip is judged, and if the temperature exceeds the preset temperature for safe work of the power management chip, the control module controls the power management chip to be turned off;
the first conductive type is a P type, the second conductive type is an N type, the first injection region and the third injection region are N well injection regions, and the second injection region and the fourth injection region are P well injection regions; the injection regions of the wells are all annularly injected, the doping concentration of the first injection region is the same as that of the third injection region, and the doping concentration of the second injection region is the same as that of the fourth injection region; the temperature control chip further comprises a first metal area connected with the first electrode and a second metal area connected with the second electrode, and the first metal area and the second metal area are located on two sides of the injection area of each well.
2. The power supply overheat protection circuit according to claim 1, further comprising:
the load is connected with the temperature acquisition module, and the temperature acquisition module is used for carrying out power supply overheating protection on the load.
3. A power supply overheat protection circuit calibration method for a power supply overheat protection circuit according to any one of claims 1 to 2, comprising the steps of:
connecting the temperature control chip with the power management chip through a metal strip;
when a wafer is tested, the first metal area and the second metal area of the temperature control chip are respectively connected with an external test module, and the temperature control chip is heated to detect the change condition of the voltage between the first metal area and the second metal area along with the temperature to obtain a detection result;
and the control module determines the detection temperature of the power management chip according to the detection result.
4. The method for calibrating a power over-temperature protection circuit according to claim 3, wherein after the control module determines the detected temperature of the power management chip according to the detection result, the method further comprises:
and after the calibration is finished, fusing the metal strip in a burning and adjusting mode, wherein the metal strip is used for keeping the temperature of the temperature control chip and the temperature of the power management chip to be the same.
5. The method according to claim 3, wherein the temperature control chip and the power management chip are integrated on the same chip and use the same capping process;
when the temperature of the power management chip exceeds the safe working temperature, the temperature control chip outputs different currents and sends the currents to the control module, and the control module sends an instruction to the power management chip to enable the power management chip to work at the safe working temperature.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111032330.5A CN113745318B (en) | 2021-09-03 | 2021-09-03 | Power supply overheating protection circuit and calibration method thereof |
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| CN101540321A (en) * | 2008-02-06 | 2009-09-23 | 富士电机电子技术株式会社 | Semiconductor device |
| CN108140610A (en) * | 2015-10-01 | 2018-06-08 | 罗姆股份有限公司 | Semiconductor equipment |
| JP2019149569A (en) * | 2019-05-09 | 2019-09-05 | ローム株式会社 | Semiconductor device and semiconductor module |
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| JP5028748B2 (en) * | 2005-04-15 | 2012-09-19 | 富士電機株式会社 | Temperature measurement device for power semiconductor devices |
| KR101856335B1 (en) * | 2016-06-30 | 2018-05-09 | 현대자동차주식회사 | IGBT Temperature Sense Circuit for Calibrating Automatically Diode Temperature |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101540321A (en) * | 2008-02-06 | 2009-09-23 | 富士电机电子技术株式会社 | Semiconductor device |
| CN108140610A (en) * | 2015-10-01 | 2018-06-08 | 罗姆股份有限公司 | Semiconductor equipment |
| JP2019149569A (en) * | 2019-05-09 | 2019-09-05 | ローム株式会社 | Semiconductor device and semiconductor module |
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