CN113740421A - Cable defect detection device - Google Patents
Cable defect detection device Download PDFInfo
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- CN113740421A CN113740421A CN202110942023.4A CN202110942023A CN113740421A CN 113740421 A CN113740421 A CN 113740421A CN 202110942023 A CN202110942023 A CN 202110942023A CN 113740421 A CN113740421 A CN 113740421A
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- 230000007547 defect Effects 0.000 title claims abstract description 148
- 238000001514 detection method Methods 0.000 title claims abstract description 25
- 238000007405 data analysis Methods 0.000 claims abstract description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 31
- 229910052782 aluminium Inorganic materials 0.000 claims description 31
- 238000012360 testing method Methods 0.000 claims description 27
- 239000011888 foil Substances 0.000 claims description 13
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- 238000000034 method Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000032683 aging Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 239000005030 aluminium foil Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
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- 239000010949 copper Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
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- 239000004065 semiconductor Substances 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
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- G—PHYSICS
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/92—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating breakdown voltage
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/12—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing
- G01R31/1227—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials
- G01R31/1263—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials of solid or fluid materials, e.g. insulation films, bulk material; of semiconductors or LV electronic components or parts; of cable, line or wire insulation
- G01R31/1272—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials of solid or fluid materials, e.g. insulation films, bulk material; of semiconductors or LV electronic components or parts; of cable, line or wire insulation of cable, line or wire insulation, e.g. using partial discharge measurements
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Abstract
The invention relates to a cable defect detection device, comprising: mounting a bracket; a defect model assembly mounted on the mounting bracket, the defect model assembly including a plurality of different types of defect models; the wiring assembly comprises a high-voltage end and a grounding end, and any one defect model can be electrically connected between the high-voltage end and the grounding end; the high-frequency partial discharge sensor is electrically connected between the defect model to be detected and the grounding terminal, is used for sensing a partial discharge signal, is also electrically connected with a partial discharge detector and a data analysis terminal, and is used for displaying a discharge characteristic map. When the cable defect detection device is used for detection, aiming at different cable defects, the comparison of detection results under the same condition is convenient to realize.
Description
Technical Field
The invention relates to the technical field of power cables, in particular to a cable defect detection device.
Background
The high-voltage cable is an important component of a power system, and in the operation process of the cable, local electric field stress concentration may be caused by the presence of impurities inside the cable, the protrusion of a semiconductor layer, the accumulation of space charges under the action of voltage and other factors, and local discharge is generated, and the aging of the cable may be accelerated by the local discharge, even the cable is broken down, so that the safe operation of the cable is affected, and therefore, the detection of the defects of the cable is particularly important. Through the partial discharge of detection cable, can effectively judge the ageing condition of cable insulation, in time overhaul the change to the cable that does not conform to the requirements to guarantee safety. However, some inspection apparatuses in the related art do not have the same contrast for different defect types when performing defect inspection.
Disclosure of Invention
Based on the above, the invention provides a cable defect detection device, which is convenient for realizing comparison of detection results under the same condition aiming at different cable defects when used for detection.
Cable defect detection device includes:
mounting a bracket;
a defect model assembly mounted on the mounting bracket, the defect model assembly including a plurality of different types of defect models;
the wiring assembly comprises a high-voltage end and a grounding end, and any one defect model can be electrically connected between the high-voltage end and the grounding end;
the high-frequency partial discharge sensor is electrically connected between the defect model to be detected and the grounding terminal, is used for sensing a partial discharge signal, is also electrically connected with a partial discharge detector and a data analysis terminal, and is used for displaying a discharge characteristic map.
In one embodiment, the plurality of different types of defect models includes at least a tip defect model, an along-plane defect model, and an air-gap defect model.
In one embodiment, the tip defect model includes a first cable and a connection pin, the connection pin is inserted into a first insulation layer of the first cable along a radial direction of the first cable, a first core of the first cable is used for being electrically connected with the high-voltage terminal, and the connection pin is used for being electrically connected with the ground terminal.
In one embodiment, the surface defect model comprises a second cable, a second test area extending along the axial direction is arranged on the second cable, a second insulating layer of the second cable is exposed in the second test area, a second wire core of the second cable is connected with an aluminum foil, a second semi-conductive belt is wound on the second insulating layer along the axial partial area, the aluminum foil and the second semi-conductive belt are arranged at intervals along the axial direction, the aluminum foil is used for being electrically connected with the high-voltage end, and the second semi-conductive belt is used for being electrically connected with the grounding end.
In one embodiment, in the second test zone, the circumferential surface of the second insulating layer is tapered, the diameter of the large end of the tapered surface is equal to the diameter of the second outer semiconductive layer of the second cable, and the diameter of the small end of the tapered surface is equal to the diameter of the second inner semiconductive layer of the second cable.
In one embodiment, the air gap defect model includes a third cable, a third test area extending in the axial direction is disposed on the third cable, in the third test area, a third insulating layer of the third cable is exposed, an air gap is disposed on the third insulating layer, a third semi-conductive belt is sleeved on an area where the air gap is located on the third insulating layer, a third core of the third cable is used for being electrically connected with the high-voltage terminal, and the third semi-conductive belt is used for being electrically connected with the ground terminal.
In one embodiment, the mounting bracket includes a first insulating plate and a second insulating plate, the first insulating plate and the second insulating plate are arranged at an interval, a first voltage-sharing cover is arranged on the top of the first insulating plate, a second voltage-sharing cover is arranged on the top of the second insulating plate, the bottom end of the defect model is fixed in the second voltage-sharing cover, and the top end of the defect model passes through a through hole arranged on the first insulating plate and then extends into the first voltage-sharing cover.
In one embodiment, the defect model further comprises a high-voltage electrode cap and a high-voltage contact, the high-voltage contact is electrically connected with the high-voltage end, the high-voltage electrode cap is sleeved outside the top end of the defect model, the high-voltage contact is sleeved outside the high-voltage electrode cap, and the high-voltage electrode cap and the high-voltage contact are both located in the first voltage-sharing cover.
In one embodiment, the high-voltage contact and the high-voltage electrode cap sleeve are connected through an elastic piece.
In one embodiment, the elastic member is a contact finger spring, an inner ring of the contact finger spring abuts against the outer side wall of the high-voltage electrode cap, and an outer ring of the contact finger spring abuts against the inner side wall of the high-voltage contact.
According to the cable defect detection device, the mounting bracket is provided with a plurality of different types of defect models, and any one of the defect models can be electrically connected between the high-voltage end and the grounding end of the wiring assembly, so that a discharge test of the defect model is realized. When the high-voltage end is pressurized to the defect position of the defect model to be detected to generate partial discharge, the high-frequency partial discharge sensor can be coupled to a partial discharge signal, and the partial discharge detector and the data analysis terminal can observe the whole discharge process and display a typical discharge characteristic map corresponding to the defect type. Because any defect model can be electrically connected between the high-voltage end and the grounding end of the wiring assembly, if the detection of different defect models under the same condition is to be realized, the detection of another defect model can be realized only by switching the wiring assembly to be electrically connected with the other defect model after the detection of one defect model is finished, and the operation is very simple and convenient.
Drawings
FIG. 1 is a schematic structural diagram of a cable defect detecting apparatus according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of a mounting bracket, a defect model and other components of the cable defect detecting apparatus shown in FIG. 1;
FIG. 3 is a cross-sectional view of the tip defect model tip region of the cable defect inspection device of FIG. 1;
FIG. 4 is a schematic diagram of a tip defect model of the cable defect inspection apparatus of FIG. 1;
FIG. 5 is a schematic structural diagram of an edge defect model of the cable defect detecting apparatus of FIG. 1;
fig. 6 is a schematic structural diagram of an air gap defect model of the cable defect detecting apparatus in fig. 1.
Reference numerals:
a first insulating plate 110, a through hole 111, a second insulating plate 120, a bottom plate 131, a connecting plate 132, a roller 133;
a tip defect model 200, a first core 211, a first inner semiconductive layer 212, a first insulation layer 213, a first outer semiconductive layer 214, a first aluminum jacket 215, a first outer jacket 216, a first trial region 220, a connecting pin 230;
a surface defect model 300, a second wire core 311, a second inner semiconductive layer 312, a second insulating layer 313, a second outer semiconductive layer 314, a second aluminum jacket 315, a second outer jacket 316, a second test region 320, an aluminum foil 330;
air gap defect model 400, third core 411, third inner semiconductive layer 412, third insulating layer 413, third outer semiconductive layer 414, third aluminum jacket 415, third outer jacket 416, third test region 420, third semiconductive tape 430;
the first voltage-sharing cover 510, the second voltage-sharing cover 520, the high-voltage electrode cap 530, the high-voltage contact 541, the high-voltage end 542, the grounding end 543 and the finger spring 550;
the device comprises a high-frequency partial discharge sensor 610, a partial discharge detector 620 and a data analysis terminal 630.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein.
In the description of the present invention, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the invention and to simplify the description, and are not intended to indicate or imply that the referenced device or element must have a particular orientation, be constructed and operated in a particular orientation, and are not to be considered limiting of the invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the present invention, unless otherwise expressly stated or limited, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through an intermediate. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.
It will be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and the like as used herein are for illustrative purposes only and do not denote a unique embodiment.
Referring to fig. 1 and 2, fig. 1 is a schematic structural diagram of a cable defect detecting apparatus according to an embodiment of the present invention, and fig. 2 is a schematic structural diagram of a mounting bracket and a defect model of the cable defect detecting apparatus in fig. 1. The cable defect detection device provided by the embodiment of the invention comprises a mounting bracket, a defect model assembly, a wiring assembly, a high-frequency partial discharge sensor 610, a partial discharge detector 620, a data analysis terminal 630 and the like. The defect model assembly is mounted on the mounting bracket and comprises a plurality of different types of defect models. The wiring assembly comprises a high-voltage end 542 and a grounding end 543, and any defect model in the defect model assembly can be electrically connected between the high-voltage end 542 and the grounding end 543, so that a discharge test of the defect model can be realized. The high frequency partial discharge sensor 610 is electrically connected between the ground 543 and the defect model to be detected in the defect model assembly, and the high frequency partial discharge sensor 610 can be used for sensing a partial discharge signal. The high-frequency partial discharge sensor 610 is also electrically connected with a partial discharge detector 620 and a data analysis terminal 630, and the partial discharge detector 620 and the data analysis terminal 630 can display a discharge characteristic map. In this embodiment, since the plurality of defect models are all mounted on the mounting bracket, and any one of the defect models can be electrically connected between the high voltage terminal 542 and the ground terminal 543 of the wiring assembly, if the detection of different defect models is to be implemented under the same condition, the wiring assembly is only required to be switched between the defect models. That is to say, after one of the defect models is detected, the wiring assembly is switched to be electrically connected with the other defect model, so that the other defect model can be detected, and the operation is very simple and convenient.
Specifically, the defect model is electrically connected to the ground terminal 543 through a wire, and the defect model is electrically connected to the high voltage terminal 542 through another wire. When the defect model is electrically connected between the high voltage terminal 542 and the ground terminal 543, and a voltage is applied to the high voltage terminal 542, various defects existing in the cable cause the initiation and rapid growth of electrical branches, so that discharge gradually occurs until a stable discharge state is reached. The high frequency partial discharge sensor 610 disposed on the wire between the defect model and the ground 543 may be coupled to the partial discharge signal, and the partial discharge detector 620 and the data analysis terminal 630 are operated, so that the whole discharge process can be observed, and a typical discharge characteristic map is displayed for analysis and research by an operator.
In some embodiments, the plurality of different types of defect models includes at least a tip defect model, an along-plane defect model, and an air gap defect model. Specifically, one or more defect models may be provided for each type. The types of defect models are not limited to the above types, and other types of defect models may be used.
Referring to fig. 1 and 2, in some embodiments, the mounting bracket includes a first insulating plate 110 and a second insulating plate 120, and the first insulating plate 110 and the second insulating plate 120 are spaced apart from each other. In the angle shown in the drawing, the first insulating plate 110 is disposed above the second insulating plate 120 at an interval, and the bottom end of each defect pattern is connected to the second insulating plate 120 and the top end is connected to the first insulating plate 110. By providing the first insulating plate 110 and the second insulating plate 120, simultaneous mounting of a plurality of defect models can be achieved. In a specific embodiment, the first insulating plate 110 and the second insulating plate 120 are epoxy plates having a thickness of about 10mm and a diameter of about 0.5 mm. Preferably, the mounting bracket further includes a roller 133, a bottom plate 131 is fixedly connected to the bottom of the second insulating plate 120, a plurality of connecting plates 132 arranged along the circumferential direction are connected to the bottom plate 131, and the roller 133 is mounted on each connecting plate 132. When the cable defect detection device is used, the position can be easily changed through the idler wheel 133, so that a defect model is closer to the high-voltage end 542 and the grounding end 543, and a lead is conveniently arranged. Preferably, the roller 133 is a universal wheel to improve the flexibility of movement. Preferably, the roller 133 is provided with a braking and locking structure, so as to stop at any time during the moving process and stably stop at the current position.
Referring to fig. 1 and 2, and fig. 4 and 4, a schematic structural diagram of a tip defect model of the cable defect detecting apparatus in fig. 1 is shown. A tip defect model may be used to simulate a shield layer raised defect. In some embodiments, the tip defect model 200 includes a first cable and a connection pin 230, the connection pin 230 is inserted into the first insulating layer 213 of the first cable along a radial direction of the first cable, the first core 211 of the first cable is configured to be electrically connected to the high voltage terminal 542, and the connection pin 230 is configured to be electrically connected to the ground terminal 543. In particular, the first cable is a model made of a length of cable of about 0.6 meters, substantially cylindrical. The first cable comprises a first core 211, a first inner semiconductive layer 212, a first insulation layer 213, a first outer semiconductive layer 214, a first aluminum jacket 215 and a first outer jacket 216. The first core 211 is cylindrical, the first inner semi-conductive layer 212, the first insulating layer 213, the first outer semi-conductive layer 214, the first aluminum sheath 215 and the first outer sheath 216 are all annular, the first inner semi-conductive layer 212 is sleeved outside the first core 211, the first insulating layer 213 is sleeved outside the first inner semi-conductive layer 212, the first outer semi-conductive layer 214 is sleeved outside the first insulating layer 213, the first aluminum sheath 215 is sleeved outside the first outer semi-conductive layer 214, and the first outer sheath 216 is sleeved outside the first aluminum sheath 215. In the first test region 220 on the first cable, the first insulating layer 213 was exposed, and the first outer semiconductive layer 214, the first aluminum sheath 215, and the first outer sheath 216 were peeled off. The connecting pin 230 is a copper pin, the connecting pin 230 penetrates into the first insulating layer 213 to a certain depth, the connecting pin 230 can be electrically connected to the ground terminal 543 through a wire, one end of the first core 211, which is far away from the first testing region 220, can be electrically connected to the high-voltage terminal 542 through a wire, i.e., the first testing region 220 is close to the left end, and the right end of the first core 211 can be electrically connected to the high-voltage terminal 542 through a wire, as shown in fig. 4.
Referring to fig. 1 and 2, and fig. 5, fig. 5 is a schematic structural diagram of an edge defect model of the cable defect detecting apparatus in fig. 1. The along-plane defect model 300 may be used to simulate defects due to the presence of impurities. In some embodiments, the planar defect model 300 includes a second cable, the second cable is provided with a second test region 320 extending along the axial direction, a second insulation layer 313 of the second cable is exposed in the second test region 320, a second core 311 of the second cable is connected with an aluminum foil 330, a partial region of the second insulation layer 313 along the axial direction is wound with a second semi-conductive tape 340, the aluminum foil 330 is axially spaced from the second semi-conductive tape 340, the aluminum foil 330 is used for electrically connecting with a high-voltage terminal 542, and the second semi-conductive tape 340 is used for electrically connecting with a grounding terminal 543. In particular, the second cable is a substantially cylindrical model made of a length of cable of about 0.6 meters. The second cable comprises a second core 311, a second inner semiconductive layer 312, a second insulating layer 313, a second outer semiconductive layer 314, a second aluminium jacket 315 and a second outer jacket 316. The second wire core 311 is cylindrical, the second inner semi-conducting layer 312, the second insulating layer 313, the second outer semi-conducting layer 314, the second aluminum sheath 315 and the second outer sheath 316 are all annular, the second inner semi-conducting layer 312 is sleeved outside the second wire core 311, the second insulating layer 313 is sleeved outside the second inner semi-conducting layer 312, the second outer semi-conducting layer 314 is sleeved outside the second insulating layer 313, the second aluminum sheath 315 is sleeved outside the second outer semi-conducting layer 314, and the second outer sheath 316 is sleeved outside the second aluminum sheath 315. In the second test area 320 on the second cable, the second insulating layer 313 was exposed, and the outer second outer semiconductive layer 314, the second aluminum jacket 315, and the second outer jacket 316 were peeled off. An aluminum foil 330 is wound around the axial direction from the end of the second wire core 311 onto the second insulation layer 313 in the second trial area 320. The second semiconductive tape 340 was wound starting from the other end of the second test zone 320, the second semiconductive tape 340 being axially spaced from the aluminium foil 330. In the view of fig. 5, the second trial area 320 is close to the left end of the second cable, the second semiconductive tape 340 is wound from the right end of the second trial area 320 towards the left, and the aluminum foil 330 is wound from the left end of the second core 311 towards the right. Preferably, the circumferential surface of the second insulating layer 313 exposed in the second test zone 320 has a tapered surface, a large end diameter of the tapered surface is equal to the diameter of the second outer semiconductive layer 314 of the second cable, and a small end diameter of the tapered surface is equal to the diameter of the second inner semiconductive layer 312 of the second cable. By providing the tapered surface, the step between the second semiconductive tape 340 and the aluminum foil 330 can be eliminated, so that the two are on the same tapered surface, and the detection is more accurate.
Referring to fig. 1 and 2, and fig. 6, fig. 6 is a schematic structural diagram of an air gap defect model of the cable defect detecting apparatus in fig. 1. The air gap defect model 400 may be used to simulate defects due to the presence of micro-holes. In some embodiments, the air gap defect model 400 includes a third cable, a third test area 420 is disposed on the third cable, the third test area 420 is formed by exposing a third insulation layer 413 of the third cable and forming an air gap on the third insulation layer 413, a third semi-conductive tape 430 is disposed on the third insulation layer 413 in the area of the air gap, a third core 411 of the third cable is electrically connected to a high-voltage terminal 542, and the third semi-conductive tape 430 is electrically connected to a ground terminal 543. In particular, the third cable is a model made of a length of cable of about 0.6 meters, substantially cylindrical. The third cable comprises a third core 411, a third inner semiconductive layer 412, a third insulating layer 413, a third outer semiconductive layer 414, a third aluminum jacket 415 and a third outer jacket 416. The third core 411 is cylindrical, the third inner semiconductive layer 412, the third insulating layer 413, the third outer semiconductive layer 414, the third aluminum sheath 415 and the third outer sheath 416 are all annular, the third inner semiconductive layer 412 is sleeved outside the third core 411, the third insulating layer 413 is sleeved outside the third inner semiconductive layer 412, the third outer semiconductive layer 414 is sleeved outside the third insulating layer 413, the third aluminum sheath 415 is sleeved outside the third outer semiconductive layer 414, and the third outer sheath 416 is sleeved outside the third aluminum sheath 415. In the third test area 420 on the third cable, the third insulating layer 413 was exposed, and the third outer semiconductive layer 414, the third aluminum sheath 415, and the third outer sheath 416 were peeled off. The third insulating layer 413 is covered with a third semiconducting tape 430 in the area of the air gap, i.e. the micro-hole, to shield the air gap. In fig. 6, the third test area 420 is close to the left end of the third cable, the right end of the third core 411 can be electrically connected to the high voltage terminal 542 through a conducting wire, and the third semiconductive tape 430 can be electrically connected to the ground terminal 543 through a conducting wire.
Referring to fig. 1 to 6, in some embodiments, a first voltage-sharing mask 510 is disposed on the top of the first insulating plate 110, a second voltage-sharing mask 520 is disposed on the top of the second insulating plate 120, the bottom end of the defect pattern is fixed in the second voltage-sharing mask 520, and the top end of the defect pattern passes through the through hole 111 formed in the first insulating plate 110 and then extends into the first voltage-sharing mask 510. Specifically, the second voltage-sharing cover 520 is fixed to the top of the second insulating plate 120 by a threaded fastener such as a screw, the first insulating plate 110 is provided with a through hole 111, the top end of the defect model penetrates through the through hole 111 and is fixedly connected with the first insulating plate 110, and the top end of the defect model extends into the first voltage-sharing cover 510. Through setting up first voltage-sharing cover 510 and second voltage-sharing cover 520, can even high-voltage electric field to separate the sinle silk that the tip exposes with the external world, reduce external disturbance, improve and detect the accuracy. Taking the tip defect model as an example, specifically, the tip defect model 200 has one end provided with the first test area 220 on the upper side and the other end on the lower side. The bottom end of the first wire core 211 is inserted into the second voltage-sharing cover 520, and the two are fixedly connected, and the second voltage-sharing cover 520 can also support the bottom end of the first wire core 211. The top end of the first wire core 211 penetrates through the through hole 111 and extends into the first voltage-sharing cover 510. The first core 211 is bonded to a wall of the through hole 111, or a top surface of a portion of the first cable located below the first insulating plate 110 is bonded to a bottom surface of the first insulating plate 110.
Referring to fig. 1 to 3, in some embodiments, the defect model further includes a high voltage electrode cap 530 and a high voltage contact 541, the high voltage contact 541 is electrically connected to the high voltage terminal 542, the high voltage electrode cap 530 is sleeved outside the top end of the defect model, the high voltage contact 541 is sleeved outside the high voltage electrode cap 530, and the high voltage electrode cap 530 and the high voltage contact 541 are both located in the first pressure equalizing cover 510. Taking the tip defect model as an example, specifically, the high voltage electrode cap 530 is hollow inside and is sleeved outside the top end of the first core 211. The high-voltage contact 541 is electrically connected with the high-voltage end 542 through a wire, the high-voltage contact 541 is hollow, and the high-voltage contact 541 penetrates through a hole at the top of the first voltage-sharing cover 510, extends into the first voltage-sharing cover 510, and is sleeved outside the high-voltage electrode cap 530. The high voltage electrode cap 530 can isolate the first wire core 211 from the external space, reduce the influence of external factors on the high voltage electrode cap, and improve the detection accuracy.
In some embodiments, the high voltage contact 541 is connected to the high voltage electrode cap 530 sheath by a spring. Therefore, the reliability of the joint of the two is higher, and the probability of poor contact between the two is reduced. Specifically, in some embodiments, the elastic member is a finger spring 550, an inner ring of the finger spring 550 abuts against an outer sidewall of the high voltage electrode cap 530, and an outer ring of the finger spring 550 abuts against an inner sidewall of the high voltage contact 541. The finger spring 550 is annular, an annular receiving groove is formed on the inner side wall of the high-voltage contact 541, the finger spring 550 is clamped in the receiving groove, and when the high-voltage contact 541 is sleeved on the high-voltage electrode cap 530, the inner side of the finger spring 550 will abut against the outer side wall of the high-voltage electrode cap 530. Of course, in other embodiments, a spring of conventional construction may be used.
In the invention, because a plurality of defect models are all arranged on the mounting bracket, and any defect model can be electrically connected between the high-voltage end 542 and the grounding end 543 of the wiring assembly, if the detection of different defect models is realized under the same condition, the wiring assembly only needs to be switched among the defect models. In addition, the detection can be repeated for the same defect model for multiple times so as to improve the accuracy.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (10)
1. Cable defect detection device, its characterized in that includes:
mounting a bracket;
a defect model assembly mounted on the mounting bracket, the defect model assembly including a plurality of different types of defect models;
the wiring assembly comprises a high-voltage end and a grounding end, and any one defect model can be electrically connected between the high-voltage end and the grounding end;
the high-frequency partial discharge sensor is electrically connected between the defect model to be detected and the grounding terminal, is used for sensing a partial discharge signal, is also electrically connected with a partial discharge detector and a data analysis terminal, and is used for displaying a discharge characteristic map.
2. The cable defect inspection device of claim 1, wherein the plurality of different types of defect models includes at least a tip defect model, an edge defect model, and an air gap defect model.
3. The cable defect detecting apparatus according to claim 2, wherein the tip defect model includes a first cable and a connection pin, the connection pin is inserted into a first insulating layer of the first cable in a radial direction of the first cable, a first core of the first cable is configured to be electrically connected to the high-voltage terminal, and the connection pin is configured to be electrically connected to the ground terminal.
4. The cable defect detecting device of claim 2, wherein the surface defect model comprises a second cable, a second test area extending along the axial direction is arranged on the second cable, a second insulating layer of the second cable is exposed in the second test area, a second wire core of the second cable is connected with an aluminum foil, a second semi-conductive belt is wound on the second insulating layer along the axial partial area, the aluminum foil and the second semi-conductive belt are arranged at intervals along the axial direction, the aluminum foil is used for being electrically connected with the high-voltage terminal, and the second semi-conductive belt is used for being electrically connected with the grounding terminal.
5. The cable defect detecting apparatus according to claim 4, wherein a circumferential surface of the second insulating layer in the second test zone has a tapered surface, a large end diameter of the tapered surface is equal to a diameter of the second outer semiconductive layer of the second cable, and a small end diameter of the tapered surface is equal to a diameter of the second inner semiconductive layer of the second cable.
6. The cable defect detecting device of claim 2, wherein the air gap defect model comprises a third cable, a third test area extending in the axial direction is arranged on the third cable, in the third test area, a third insulating layer of the third cable is exposed, an air gap is arranged on the third insulating layer, a third semi-conductive belt is sleeved on the area, where the air gap is located, of the third insulating layer, a third core of the third cable is used for being electrically connected with the high-voltage end, and the third semi-conductive belt is used for being electrically connected with the grounding end.
7. The cable defect detecting device according to claim 1, wherein the mounting bracket includes a first insulating plate and a second insulating plate, the first insulating plate and the second insulating plate are spaced apart from each other, a first voltage-sharing cover is disposed on a top of the first insulating plate, a second voltage-sharing cover is disposed on a top of the second insulating plate, a bottom end of the defect model is fixed in the second voltage-sharing cover, and a top end of the defect model extends into the first voltage-sharing cover after passing through a through hole disposed on the first insulating plate.
8. The cable defect detecting device of claim 7, further comprising a high voltage electrode cap and a high voltage contact, wherein the high voltage contact is electrically connected to the high voltage end, the high voltage electrode cap is sleeved outside the top end of the defect model, the high voltage contact is sleeved outside the high voltage electrode cap, and the high voltage electrode cap and the high voltage contact are both located in the first voltage equalizing cover.
9. The cable defect detecting device of claim 8, wherein the high voltage contact is connected with the high voltage electrode cap sleeve through an elastic member.
10. The cable defect detecting device of claim 9, wherein the elastic member is a finger spring, an inner ring of the finger spring abuts against an outer side wall of the high voltage electrode cap, and an outer ring of the finger spring abuts against an inner side wall of the high voltage contact.
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