CN113736084B - Transparent polyamide-imide resin and preparation method and application thereof - Google Patents

Transparent polyamide-imide resin and preparation method and application thereof Download PDF

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CN113736084B
CN113736084B CN202111031204.8A CN202111031204A CN113736084B CN 113736084 B CN113736084 B CN 113736084B CN 202111031204 A CN202111031204 A CN 202111031204A CN 113736084 B CN113736084 B CN 113736084B
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CN113736084A (en
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王艳宾
周永南
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Jiangsu Huizhi New Material Technology Co ltd
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    • C08J2379/08Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
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Abstract

The invention discloses a transparent polyamide imide resin, which comprises the following repeated structural units:n is a repeating structural unit and is 800-3000. The polyamide-imide resin provided by the invention has high strength, high heat resistance and good optical transmittance and solubility by simultaneously introducing the rigid aromatic structure and the fluorine-containing group into the main chain of the polymer, and can be used for an optical protection film of an organic photovoltaic device.

Description

Transparent polyamide-imide resin and preparation method and application thereof
Technical Field
The invention belongs to the technical field of high polymer materials, and particularly relates to a transparent polyamide-imide resin, a preparation method thereof and an organic photovoltaic device containing the transparent polyamide-imide resin.
Background
Solar energy is used as a green and environment-friendly renewable energy source, and attracts more and more scientists and enterprises to see. As a next generation photovoltaic technology, the organic solar cell has the advantages of light weight, good flexibility, solution processing and the like, and becomes a hot spot of current research. However, the currently commercialized photovoltaic devices are still based on inorganic silicon solar cells, and an important reason why organic photovoltaic devices are not commercialized on a large scale is that they are poor in stability. Therefore, how to improve the stability of the organic photovoltaic device plays a vital role in commercialization of the organic photovoltaic device.
The polyamide imide (PAI) main chain not only contains polar functional group amide bond, but also has rigid imide ring, so that the polyamide imide not only has good solubility but also has higher thermal stability through molecular optimization design, and can be expected to be used for an optical protection film of an organic photovoltaic device.
Disclosure of Invention
The invention aims to provide a transparent polyamide-imide resin which has good solubility and thermal stability and can meet the requirements of a protective film for an organic photovoltaic device.
A second object of the present invention is to provide a method for producing the transparent polyamideimide resin.
A third object of the present invention is to provide an application of the transparent polyamideimide resin in the preparation of organic photovoltaic devices.
In order to achieve the above purpose, the technical scheme adopted by the invention is as follows:
the first aspect of the present invention provides a transparent polyamideimide resin having the following repeating structural units:
n is a repeating structural unit and is 800-3000.
The second aspect of the present invention provides a method for preparing the transparent polyamideimide resin, comprising the steps of:
trimellitic anhydride (TMA) and m-toluidine (DP) in a molar ratio of 1 (0.3-1.5) (preferably 1:0.4) are dissolved in acetic acid (CH) 3 COOH) is slowly heated to 70-130 ℃ (preferably 90 ℃) under the nitrogen atmosphere, reacted for 5-24 hours (preferably 12 hours), the reaction solution is cooled to room temperature, and the diacid monomer TMA-DP is obtained by centrifugation;
dissolving diacid monomer TMA-DP with the molar ratio of 1 (5-15): 1 (preferably 1:9:1), compatibilizer, 2-bis (4-aminophenyl) hexafluoropropane (DFP) and excessive phosphorylating agent in a solvent, slowly heating to 70-130 ℃ (preferably 105 ℃) under nitrogen atmosphere, reacting for 5-24 hours (preferably 11 hours), pouring into ethanol for precipitation, filtering and drying to obtain the polyamide imide resin TMA-DP-DFP.
The solvent is N-methyl pyrrolidone.
The phosphorylating agent is triphenyl phosphite (TPP).
The compatibilizer is a mixture of calcium chloride and lithium chloride, and the molar ratio of the calcium chloride to the lithium chloride is 2:3.
In a third aspect, the present invention provides an application of the transparent polyamideimide resin in preparing organic photovoltaic devices.
The organic photovoltaic device comprises an anode, a cathode and an optical protection film, wherein the anode and the cathode are oppositely arranged, the optical protection film is positioned on the outer surface of the cathode, a hole transmission layer, an active material layer and an electron transmission layer are sequentially arranged between the anode and the cathode from top to bottom, and the optical protection film is made of polyamide imide resin TMA-DP-DFP.
The thickness of the optical protective film was about 30 μm.
The thickness of the hole transport layer was 20nm.
The thickness of the active material layer was 200nm.
The thickness of the electron transport layer was 20nm.
The thickness of the cathode is 100nm.
The thickness of the anode was 7 μm.
The hole transport layer is made of PEDOT and PSS, and the structures of the PEDOT and the PSS are as follows:
the active material layer is made of a donor material and an acceptor material, wherein the donor material is P3HT, PSBTBT, PBDB-T, the acceptor material is PCBM and IT-M, and the structural formula of the P3HT, PCBM, PSBTBT is shown as follows:
the electron transport layer is made of Ca and PFN-Br, and the PFN-Br has the following structure:
the cathode material is Al.
The anode material is ITO.
By adopting the technical scheme, the invention has the following advantages and beneficial effects:
according to the polyamide-imide resin provided by the invention, the fluorine-containing groups are introduced into the polymer main chain, so that the solubility of polyamide-imide can be improved, the charge transfer complex between molecules and in molecules can be weakened, and the optical transmittance of the resin can be improved. According to the polyamide-imide resin provided by the invention, a large number of rigid aromatic groups are introduced into the main chain of the polymer, so that the mechanical property of the resin can be improved, and the thermal stability of the resin can be improved.
The polyamide-imide resin provided by the invention has high strength, high heat resistance and good optical transmittance and solubility by simultaneously introducing the rigid aromatic structure and the fluorine-containing group into the main chain of the polymer, and can be used for an optical protection film of an organic photovoltaic device.
The polyamide imide resin provided by the invention is used for the protective film of the organic photovoltaic device, and has high strength, high heat resistance, good solubility and good optical transmittance by introducing the rigid aromatic structure and the fluorine-containing group into the polymer main chain at the same time, and can be used for the optical protective film of the organic photovoltaic device.
The transparent polyamide imide resin TMA-DP-DFP provided by the invention has the optical transmittance of 86% at 450nm, the tensile strength of 100MPa, the Young modulus of 1.84GPa, the initial decomposition temperature of 505 ℃ and can be dissolved in N, N-dimethylacetamide. Therefore, TMA-DP-DFP has both high strength and high heat resistance of polyimide resin and good solution processability of traditional optical protective film polyethylene terephthalate resin, and has excellent comprehensive performance. Further, the energy conversion efficiency of the organic photovoltaic device using TMA-DP-DFP as the optical protective film after acid-base treatment is more than 90% of that before acid-base treatment.
Drawings
FIG. 1 is a nuclear magnetic resonance hydrogen spectrum of a polyamideimide resin TMA-DP-DFP synthesized in example 1;
FIG. 2 is an infrared spectrum of a polyamideimide resin TMA-DP-DFP synthesized in example 1;
FIG. 3 is a graph showing the light transmittance of the polyamideimide resin TMA-DP-DFP synthesized in example 1;
FIG. 4 is a schematic diagram showing stress-strain curves of the polyamideimide resin TMA-DP-DFP synthesized in example 1;
FIG. 5 is a thermogravimetric analysis spectrum of the polyamideimide resin TMA-DP-DFP synthesized in example 1;
FIG. 6 is a graph showing the thermal expansion coefficient of the polyamideimide resin TMA-DP-DFP synthesized in example 1.
Detailed Description
In order to more clearly illustrate the present invention, the present invention will be further described with reference to preferred embodiments. It is to be understood by persons skilled in the art that the following detailed description is illustrative and not restrictive, and that this invention is not limited to the details given herein.
The experimental methods used in the following examples are conventional methods unless otherwise specified. The experimental materials, reagents and the like used in the following experimental examples can be obtained by commercial methods or known experimental methods.
Example 1
A transparent polyamideimide resin having the following repeating structural units, which is designated as TMA-DP-DFP.
n is a repeating structural unit and is 800-3000.
A preparation method of transparent polyamide imide resin TMA-DP-DFP comprises the following steps:
(1) Synthesis of diacid monomer TMA-DP, the reaction can be represented by the following reaction formula:
to a 250ml three-necked flask, trimellitic anhydride TMA (9.6 g,0.05 mol), m-tolidine (DP) (4.24 g,0.02 mol) and 100ml acetic acid were charged, and the temperature was slowly raised to 90℃under a nitrogen atmosphere to react for 12 hours. The reaction solution was cooled to room temperature and centrifuged to give a white diacid monomer (TMA-DP) (25.26 g,0.045 mol), yield: 90.2%.
Nuclear magnetic and infrared data: 1 H NMR(Trifluoroacetic acid-d,500MHz,δ/ppm):11.75(broad,COOH),8.82(d,2H),8.75-8.78(m,2H),8.31(d,2H),8.26(d,2H),7.43(d,2H),7.36-7.38(dd,2H),2.26(s,6H)。FTIR(KBr,ν,cm -1 ):3424,1780,1719,1686,1624,1610,1406,1376。
(2) Synthesis of transparent polyamideimide resin TMA-DP-DFP, the reaction can be represented by the following reaction formula:
a white diacid monomer TMA-DP (2.8 g,0.005 mol) was added to a 250mL three-necked flask equipped with a nitrogen inlet and outlet and a mechanical stirring device, and then 10mL N-methylpyrrolidone (NMP) was measured and added to the flask, followed by stirring at room temperature to dissolve. Adding CaCl 2 (2 g,0.018 mol), liCl (1.12 g,0.027 mol), 7mL of triphenyl phosphite (TPP) were added to the flask, followed by the final addition of 2, 2-bis (4-aminophenyl) hexafluoropropane (DFP) (0.835 g,0.005 mol) and 12mL of NMP. After the addition, slowly heating to 105 ℃ under the nitrogen atmosphere, reacting for 11 hours, pouring into ethanol for precipitation, filtering and drying to obtain the polyamide imide resin TMA-DP-DFP.
Nuclear magnetic and infrared data for transparent polyamideimide resin TMA-DP-DFP: as shown in FIGS. 1 and 2, FIG. 1 shows the nuclear magnetic resonance hydrogen spectrum of the polyamideimide resin TMA-DP-DFP synthesized in example 1. FIG. 2 is an infrared spectrum of a polyamideimide resin TMA-DP-DFP synthesized in example 1. 1 H NMR(Trifluoroacetic acid-d,500MHz,δ/ppm):11.66(s,2H),8.77(s,2H),8.56-8.61(d,2H),8.42(d,2H),8.31(s,2H),8.25(d,2H),7.57-7.60(d,2H),7.39-7.44(dd,4H),7.31(d,4H),2.17-2.26(t,6H)。FTIR(KBr,ν,cm -1 ):3323,2929,2852,1781,1724,1671,1602,1372,1257,1207,1173。
The polyamide-imide resin TMA-DP-DFP prepared above was subjected to the following performance test, and the test results are shown in Table 1:
optical transmittance: the optical transmittance of TMA-DP-DFP is tested by an UltraScan PRO full-automatic color difference meter, the wavelength is selected to be 375-1000 nm, and the thickness of the film is 50 mu m.
Mechanical properties: the mechanical properties of TMA-DP-DFP were tested by WDT-10 electronic universal tester according to national standard GB/T1040.3-2006.
Thermal stability test: thermal stability testing of TMA-DP-DFP was performed on a TGA 4000 thermogravimetric analyzer from Perkinelmer, inc., U.S.A.. Specific parameter setting: sample mass: 40.2mg; test temperature: 30-800 ℃; rate of temperature rise: 10 ℃/min; test environment: and (3) nitrogen atmosphere.
Coefficient of thermal expansion test: coefficient of thermal expansion test of TMA-DP-DFP static stretching was performed on a DMA 8000-type thermo-mechanical analyzer from Perkinelmer, inc. of America. The heating rate is 5 ℃/min, the pre-load is 0.005N, the frequency is 1Hz, and the temperature is 30-300 ℃.
Specifically, as shown in FIG. 3, FIG. 4, FIG. 5, and FIG. 6, FIG. 3 is a schematic diagram showing the light transmittance curve of the polyamideimide resin TMA-DP-DFP synthesized in example 1. As can be seen from the figure, the polyamide imide resin TMA-DP-DFP prepared by the invention has good optical transmittance. FIG. 4 is a schematic diagram showing stress-strain curves of the polyamideimide resin TMA-DP-DFP synthesized in example 1. As can be seen from the figure, the polyamide imide resin TMA-DP-DFP prepared by the invention has higher mechanical strength. FIG. 5 is a thermogravimetric analysis of the polyamideimide resin TMA-DP-DFP synthesized in example 1. As can be seen from the figure, the polyamide imide resin TMA-DP-DFP prepared by the invention has higher thermal stability. FIG. 6 is a graph showing the thermal expansion coefficient of the polyamideimide resin TMA-DP-DFP synthesized in example 1. As can be seen from the figure, the polyamideimide resin TMA-DP-DFP prepared by the present invention has excellent thermo-mechanical properties.
TABLE 1
The transparent polyamideimide resin TMA-DP-DFP prepared as described above was subjected to a solubility test, and the test results are shown in Table 2:
solubility test conditions: 200 mg of the polyamideimide resin TMA-DP-DFP was put into 5 ml of a different solvent, which was designated "+", which was completely dissolved at room temperature, and "-", which was completely dissolved at 60 ℃. N, N-dimethylformamide is abbreviated as DMF and N, N-dimethylacetamide is abbreviated as DMAc.
TABLE 2
Sample of M-cresol N-methylpyrrolidone Tetrahydrofuran (THF) DMAc DMF
TMA-DP-DFP + + + +
As can be seen from tables 1 and 2, TMA-DP-DFP synthesized by the method of the present invention has high mechanical strength and thermal stability, and good solubility and excellent comprehensive properties.
Application example 1
An organic photovoltaic device taking the polyamide-imide resin as a protective film comprises an anode, a cathode and an optical protective film, wherein the anode and the cathode are oppositely arranged, the optical protective film is positioned on the outer surface of the cathode, a hole transmission layer, an active material layer and an electron transmission layer are sequentially arranged between the anode and the cathode from top to bottom, the optical protective film is made of the polyamide-imide resin TMA-DP-DFP, and the thickness of the optical protective film is about 30 mu m; the thickness of the hole transport layer is 20nm; the thickness of the active material layer is 200nm; the thickness of the electron transport layer is 20nm; the thickness of the cathode was 100nm and the thickness of the anode was 7. Mu.m.
The preparation method of the organic photovoltaic device comprises the following steps:
in the first step, a PEDOT/PSS solution (mass ratio of PEDOT to PSS: 1:6) was spin-coated on a cleaned anode (ITO), and heated at 140℃for 10 minutes to form a PEDOT/PSS film as a hole transport layer having a thickness of 20nm.
The structures of PEDOT and PSS are as follows:
in a second step, donor material (P3 HT) and acceptor material (PCBM) in a mass ratio of 1:1 are dissolved in an o-dichlorobenzene solution at a total concentration of 40mg ml -1 The solution was spin-coated on a PEDOT: PSS film, and dried to form an active material layer having a thickness of 200nm. Wherein the structural formulas of P3HT and PCBM are as follows:
and thirdly, evaporating an electron transport layer (Ca) on the active material layer, wherein the thickness of the electron transport layer (Ca) is 20nm.
And fourthly, evaporating Al on the surface of the electron transport layer to form a cathode, wherein the thickness of the cathode is 100nm.
And fifthly, spin-coating a polyamide imide resin TMA-DP-DFP solution on the cathode to form an optical protection film with the thickness of 30 mu m, thereby obtaining the organic photovoltaic device.
Application example 2
The organic photovoltaic device is different from application example 1 in that the donor material in the active material layer is PSBTBT, and the rest conditions and the preparation method are the same as application example 1, wherein the structural formula of PSBTBT is as follows:
application example 3
An organic photovoltaic device differs from application example 1 in that the donor material in the active material layer is PBDB-T, the acceptor material is IT-M, the electron transport layer material is PFN-Br, and the electron transport layer is coated on the active material layer by spin coating, and the remaining conditions and preparation methods are the same as application example 1. Wherein the structural formulas of PBDB-T, IT-M and PFN-Br are as follows:
comparative example 1 was used
The difference from application example 1 is that application comparative example 1 has no optical protective film.
Comparative example 2 was used
The difference from application example 2 is that application comparative example 2 has no optical protective film.
Comparative example 3 was used
The difference from application example 3 is that application comparative example 3 has no optical protective film.
Comparative example 4 was used
The difference from application example 1 is that the optical protective film of application comparative example 4 is polyethylene terephthalate.
Comparative example 5 was used
The difference from application example 2 is that the optical protective film of application comparative example 5 is polyethylene terephthalate.
Comparative example 6 was used
The difference from application example 3 is that the optical protective film of application comparative example 6 is polyethylene terephthalate.
The following performance tests were conducted on the organic photovoltaic devices prepared in application examples 1 to 3 and application comparative examples 1 to 6, and the test results are shown in table 3:
under standard test conditions (AM 1.5G,100mW/cm 2 ) The organic photovoltaic devices provided in application examples 1 to 3 and application comparative examples 1 to 6 were subjected to current-voltage curve test, and the test results are shown in table 3. Wherein J SC Is short-circuit current, V OC Open circuit voltage, FF as a fill factor, PCE as energy conversion efficiency.
Acid resistance test: and (3) spin-coating an acid solution with the pH of 3 prepared by hydrochloric acid on the prepared organic photovoltaic device, taking out and drying, and testing the change of the photovoltaic performance of the organic photovoltaic device before and after the acid solution is spin-coated.
Alkali resistance test: and (3) spin-coating an alkaline solution with the pH of 12 prepared by sodium hydroxide on the prepared organic photovoltaic device, taking out and drying, and testing the change of the photovoltaic performance of the organic photovoltaic device before and after the spin-coating of the alkaline solution.
TABLE 3 Table 3
As can be seen from table 3, the performance parameters of the organic photovoltaic devices with optical protective films prepared in application examples 1 to 3 were comparable to those of the conventional organic photovoltaic devices without optical protective films prepared in application comparative examples 1 to 6. However, after acid-base treatment, the organic photovoltaic devices without the optical protective film prepared in comparative examples 1 to 3 were used to lose photovoltaic properties, the organic photovoltaic devices with polyethylene terephthalate as a protective film prepared in comparative examples 4 to 6 were used to lose photovoltaic properties, and the photovoltaic properties of the organic photovoltaic devices with polyamideimide resin TMA-DP-DFP as an optical protective film prepared in the invention were kept unchanged.
In conclusion, the polyamide-imide resin TMA-DP-DFP prepared by the invention has higher mechanical strength and thermal stability, has better solubility, namely excellent comprehensive performance, and can be used as an optical protection film of an organic photovoltaic device.
The foregoing description is only illustrative of the preferred embodiment of the present invention, and is not to be construed as limiting the invention, but is to be construed as limiting the invention to any and all simple modifications, equivalent variations and adaptations of the embodiments described above, which are within the scope of the invention, may be made by those skilled in the art without departing from the scope of the invention.

Claims (10)

1. A transparent polyamideimide resin characterized by having the following repeating structural unit:
n is a repeating structural unit and is 800-3000.
2. A method for producing the transparent polyamideimide resin according to claim 1, comprising the steps of:
dissolving trimellitic anhydride and m-toluidine with the molar ratio of 1 (0.3-0.4) in acetic acid, slowly heating to 70-130 ℃ under the nitrogen atmosphere, reacting for 5-24 h, cooling the reaction solution to room temperature, and centrifuging to obtain diacid monomer TMA-DP;
dissolving diacid monomer TMA-DP with the molar ratio of 1 (5-15) to 1, compatibilizer, 2-bis (4-aminophenyl) hexafluoropropane and excessive phosphorylating agent in solvent, slowly heating to 70-130 ℃ under nitrogen atmosphere, reacting for 5-24 h, pouring into ethanol for precipitation, filtering and drying to obtain the polyamide-imide resin TMA-DP-DFP.
3. The method for producing a transparent polyamideimide resin according to claim 2, wherein the solvent is N-methylpyrrolidone;
the phosphorylating reagent is triphenyl phosphite;
the compatibilizer is a mixture of calcium chloride and lithium chloride, and the molar ratio of the calcium chloride to the lithium chloride is 2:3.
4. Use of the transparent polyamideimide resin of claim 1 in the preparation of organic photovoltaic devices.
5. The use of the transparent polyamideimide resin according to claim 4 for preparing an organic photovoltaic device, wherein the organic photovoltaic device comprises an anode, a cathode and an optical protection film positioned on the outer surface of the cathode, a hole transport layer, an active material layer and an electron transport layer are sequentially arranged between the anode and the cathode from top to bottom, and the optical protection film is made of polyamideimide resin TMA-DP-DFP.
6. The use of the transparent polyamideimide resin according to claim 5 for the preparation of an organic photovoltaic device, wherein the thickness of the optical protective film is 30 μm;
the thickness of the hole transport layer is 20nm;
the thickness of the active material layer is 200nm;
the thickness of the electron transport layer is 20nm;
the thickness of the cathode is 100nm;
the thickness of the anode was 7 μm.
7. The use of the transparent polyamideimide resin according to claim 5 for the preparation of organic photovoltaic devices, wherein the hole transport layer is made of PEDOT and PSS having the following structure:
8. the use of a transparent polyamideimide resin according to claim 5 for the preparation of organic photovoltaic devices, wherein the active material layer is made of a donor material, P3HT, PSBTBT, PBDB-T, and a acceptor material, PCBM, IT-M, the structural formula of P3HT, PSBTBT, PBDB-T, PCBM, IT-M being as follows:
9. the use of the transparent polyamideimide resin according to claim 5 for preparing organic photovoltaic devices, wherein the electron transport layer is made of Ca, PFN-Br, and the structure of PFN-Br is as follows:
10. the use of the transparent polyamideimide resin according to claim 5 for the preparation of organic photovoltaic devices, wherein the cathode material is Al; the anode material is ITO.
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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102666659A (en) * 2009-11-26 2012-09-12 株式会社钟化 Optical film, optical film manufacturing method, transparent substrate, image display device, and solar cell
JP2012229402A (en) * 2011-04-12 2012-11-22 Toyobo Co Ltd Method for producing polyamide-imide film
JP2013091679A (en) * 2011-10-24 2013-05-16 Hitachi Chemical Co Ltd Polyamideimide resin, seamless pipe body, coating film, coating film plate, and heat-resistant coating material
KR20190123631A (en) * 2018-04-24 2019-11-01 한국과학기술원 Poly(amide-imide), Film including the same, and Electronic device including the same
CN111533909A (en) * 2020-06-08 2020-08-14 武汉柔显科技股份有限公司 Polyamide-imide, polyamide-imide film and display device
CN112094411A (en) * 2020-09-22 2020-12-18 江苏慧智新材料科技有限公司 Transparent polyamide-imide resin and preparation method and application thereof

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101529496B1 (en) * 2012-12-27 2015-06-22 한국과학기술원 poly(amide imide) having low thermal expansion coefficient

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102666659A (en) * 2009-11-26 2012-09-12 株式会社钟化 Optical film, optical film manufacturing method, transparent substrate, image display device, and solar cell
JP2012229402A (en) * 2011-04-12 2012-11-22 Toyobo Co Ltd Method for producing polyamide-imide film
JP2013091679A (en) * 2011-10-24 2013-05-16 Hitachi Chemical Co Ltd Polyamideimide resin, seamless pipe body, coating film, coating film plate, and heat-resistant coating material
KR20190123631A (en) * 2018-04-24 2019-11-01 한국과학기술원 Poly(amide-imide), Film including the same, and Electronic device including the same
CN111533909A (en) * 2020-06-08 2020-08-14 武汉柔显科技股份有限公司 Polyamide-imide, polyamide-imide film and display device
CN112094411A (en) * 2020-09-22 2020-12-18 江苏慧智新材料科技有限公司 Transparent polyamide-imide resin and preparation method and application thereof

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