CN113726319B - Driving circuit of power semiconductor and power semiconductor device - Google Patents
Driving circuit of power semiconductor and power semiconductor device Download PDFInfo
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- CN113726319B CN113726319B CN202110996026.6A CN202110996026A CN113726319B CN 113726319 B CN113726319 B CN 113726319B CN 202110996026 A CN202110996026 A CN 202110996026A CN 113726319 B CN113726319 B CN 113726319B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 93
- 238000006243 chemical reaction Methods 0.000 claims description 19
- 238000002955 isolation Methods 0.000 claims description 19
- 238000012545 processing Methods 0.000 claims description 16
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0036—Means reducing energy consumption
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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Abstract
The invention discloses a driving circuit of a power semiconductor device and the power semiconductor device. The driving circuit comprises a driving signal output end, a main driving conduction module, a main driving turn-off module, an auxiliary driving conduction module, an auxiliary driving turn-off module and a logic control module; the logic control module is used for outputting a first logic control signal through a first logic control end according to the driving conduction signal; the auxiliary drive conduction module is used for increasing the current of the drive conduction signal in an auxiliary manner according to the first logic control signal; the logic control module is used for outputting a second logic control signal through a second logic control end according to the driving conduction signal; the auxiliary drive turn-off module is used for assisting in increasing the current of the drive turn-off signal according to the second logic control signal. The technical scheme provided by the invention realizes the auxiliary adjustment of the driving signal according to the switching process of the power semiconductor device, reduces the switching loss of the power semiconductor and improves the switching efficiency.
Description
Technical Field
The embodiment of the invention relates to an electronic driving technology, in particular to a driving circuit of a power semiconductor and a power semiconductor device.
Background
With the progress of power semiconductor device technology, the power density of power semiconductor devices is continuously increasing. The requirements for the drive circuits of the devices are also increasing.
In the prior art, the power semiconductor driving circuit is single, and the output signal of the driving circuit cannot be adjusted in real time according to the characteristics of the power semiconductor device and the state of the device in the switching process, so that the loss of the device in the switching process is too high.
Disclosure of Invention
The invention provides a driving circuit of a power semiconductor and the power semiconductor device, which realize auxiliary adjustment of driving signals according to the switching process of the power semiconductor device, reduce the switching loss of the power semiconductor and improve the switching efficiency.
The embodiment of the invention provides a driving circuit of a power semiconductor device, which comprises: the device comprises a driving signal output end, a main driving on module, a main driving off module, an auxiliary driving on module, an auxiliary driving off module and a logic control module;
The control end of the main drive on module is connected with the control end of the main drive off module and then connected with a pulse control signal, wherein the pulse control signal comprises a first level and a second level, and the polarities of the first level and the second level are opposite; the output end of the main drive on module is connected with the output end of the main drive off module and then is connected with the drive signal output end; the main driving conduction module is used for outputting a driving conduction signal according to the first level; the main drive turn-off module is used for outputting a drive turn-off signal according to the second level;
the output end of the auxiliary drive conduction module is connected with the output end of the main drive conduction module; the control end of the auxiliary drive conduction module is connected with the first output end of the logic control module; the output end of the auxiliary drive shutoff module is connected with the output end of the main drive shutoff module; the control end of the auxiliary drive turn-off module is connected with the second output end of the logic control module;
The first input end of the logic control module is connected with the driving signal output end, and the logic control module is used for outputting a first logic control signal through the first logic control end according to the driving conduction signal; the auxiliary drive conduction module is used for increasing the current of the drive conduction signal in an auxiliary manner according to the first logic control signal; the logic control module is used for outputting a second logic control signal through the second logic control end according to the driving conduction signal; the auxiliary drive turn-off module is used for assisting in increasing the current of the drive turn-off signal according to the second logic control signal.
Optionally, the logic control module is further configured to output the first logic control signal when the driving on signal is smaller than a first reference signal or the driving on signal is larger than a second reference signal,
Outputting the third logic control signal when the driving turn-on signal is greater than the first reference signal and less than the second reference signal;
Outputting the second logic control signal when the driving turn-off signal is smaller than the first reference signal or the driving turn-off signal is larger than the second reference signal;
Outputting the fourth logic control signal when the driving off signal is greater than the first reference signal and less than the second reference signal; wherein the first reference signal comprises a threshold voltage value of the power semiconductor device; the second reference signal includes a miller plateau voltage value of the power semiconductor device.
Optionally, the main driving on module comprises a first switch tube and a first resistor, and the main driving off module comprises a second switch tube and a second resistor;
The control end of the first switching tube is connected with the control end of the second switching tube and then connected with the pulse control signal; the second end of the first switch tube is connected with a power supply signal, and the first end of the first switch tube is connected with the output end of the main driving module through the first resistor; the first end of the second switching tube is connected with the output end of the main driving module through the second resistor, and the second end of the second switching tube is grounded; the first switching tube is used for being conducted when the pulse control signal is of a first level; the second switching tube is used for being conducted when the pulse control signal is of a second level.
Optionally, the auxiliary driving on module comprises a third switching tube and a fourth resistor, and the auxiliary driving off module comprises a fourth switching tube and a fifth resistor;
The control end of the third switching tube is connected with the first output end of the logic control module, the second end of the third switching tube is connected with a power supply signal, the first end of the third switching tube is connected with the driving signal output end through the fourth resistor, the control end of the fourth switching tube is connected with the second output end of the logic control module, the second end of the fourth switching tube is grounded, and the first end of the fourth switching tube is connected with the driving signal output end through the fifth resistor; the third switching tube is used for being conducted according to the first logic control signal; the fourth switching tube is used for being conducted according to the second logic control signal.
Optionally, the logic control module comprises a comparison unit and a signal processing unit;
The first input end of the comparison unit is connected with the driving signal output end, the second input end of the comparison unit is connected with the first reference signal output end, and the third input end of the comparison unit is connected with the second reference signal output end; the comparison unit is used for outputting a first signal when the driving on signal is smaller than the first reference signal or the driving on signal is larger than the second reference signal, and outputting a second signal when the driving off signal is smaller than the first reference signal or the driving off signal is larger than the second reference signal; the first input end of the signal processing unit is connected with the output end of the comparison unit; a second input end of the signal processing unit is connected with a pulse control signal; ; the signal processing unit is used for outputting the first logic control signal according to the first signal and the first level, and outputting the second logic control signal according to the second signal and the second level.
Optionally, the comparing unit includes a first comparator, a second comparator, a sixth resistor, a seventh resistor, a second comparator, an eighth resistor, a ninth resistor, and a first nand gate; the first input end of the first comparator is connected with the driving signal output end through the seventh resistor, the second input end of the first comparator is connected with the first reference signal output end through the sixth resistor,
The first input end of the second comparator is connected with the second reference signal output end through the ninth resistor, and the second input end of the second comparator is connected with the driving signal output end through the eighth resistor;
The first input end of the first NAND gate is connected with the output end of the first comparator; the second input end of the first NAND gate is connected with the output end of the second comparator; the first NAND gate is used for outputting a first signal when the driving on signal is smaller than the first reference signal or the driving on signal is larger than the second reference signal, and outputting a second signal when the driving off signal is smaller than the first reference signal or the driving off signal is larger than the second reference signal.
Optionally, the signal processing unit includes an and gate, a second nand gate, an inverter, a tenth resistor, and an eleventh resistor;
The first end of the AND gate is connected with a pulse control signal; the second end of the door is connected with the output end of the comparison unit; the AND gate output end is connected with the first output end of the logic control module through the tenth resistor; the AND gate is used for outputting a first logic control signal when the comparison unit outputs the first signal;
The input end of the inverter is connected with a pulse control signal; the second input end of the second NAND gate is connected with the output end of the inverter, and the first input end of the second NAND gate is connected with the output end of the comparison unit; the second NAND gate is connected with the second output end of the logic control module through the eleventh resistor; the NAND gate is used for outputting a second logic control signal when the comparison unit outputs the second signal.
Optionally, the driving circuit of the power semiconductor device further includes a strong and weak electric signal isolation and level conversion module, the control end of the main driving on module is connected with the control end of the main driving off module and then connected with the output end of the strong and weak electric signal isolation and level conversion module, and the strong and weak electric signal isolation and level conversion module is used for providing the pulse control signal.
Optionally, the driving circuit of the power semiconductor device further comprises a current limiting resistor, and the output end of the strong and weak electric signal isolation and level conversion module is connected with the control end of the main driving conduction module and the control end of the main driving turn-off module through the current limiting resistor; the current limiting resistor is used for limiting current and protecting a later-stage circuit.
In a second aspect, an embodiment of the present invention provides a power semiconductor device, including a driving circuit of the power semiconductor device according to any one of the embodiments of the present invention, where an output terminal of the driving circuit is electrically connected to a control terminal of the power semiconductor device.
According to the technical scheme provided by the embodiment of the invention, the logic control module is used for sending logic signals to control the auxiliary driving on module and the auxiliary driving off module. When a driving conduction signal is output, the logic control module controls the auxiliary driving conduction module to conduct, so that the current of the driving conduction signal is increased in an auxiliary mode; when the driving turn-off signal is output, the logic control module controls the auxiliary driving turn-off module to be turned on, so that the current of the driving turn-off signal is increased in an auxiliary mode. According to the switching process of the power semiconductor device, the driving signal current is correspondingly adjusted, so that the driving of the power semiconductor is always in an optimal state, the switching loss of the power semiconductor is reduced, and the switching efficiency is improved.
Drawings
Fig. 1 is a schematic structural diagram of a driving circuit of a power semiconductor device according to an embodiment of the present invention.
Fig. 2 is a schematic structural diagram of a driving circuit of another power semiconductor device according to an embodiment of the present invention.
Fig. 3 is a schematic structural diagram of a driving circuit of another power semiconductor device according to an embodiment of the present invention.
Fig. 4 is a schematic structural diagram of a logic control module according to an embodiment of the present invention.
Fig. 5 is a schematic structural diagram of another logic control module according to an embodiment of the present invention.
Fig. 6 is a schematic structural diagram of another logic control module according to an embodiment of the present invention.
Fig. 7 is a schematic structural diagram of a driving circuit of another power semiconductor device according to an embodiment of the present invention.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
An embodiment of the present invention provides a driving circuit of a power semiconductor device, and fig. 1 is a schematic structural diagram of the driving circuit of the power semiconductor device provided in the embodiment of the present invention, referring to fig. 1, the driving circuit of the power semiconductor device includes: the driving signal output end Drive, the main driving on module 110, the main driving off module 120, the auxiliary driving on module 130, the auxiliary driving off module 140 and the logic control module 150;
The control end of the main driving turn-on module 110 and the control end of the main driving turn-off module 120 are connected and then connected with a pulse control signal, wherein the pulse control signal comprises a first level and a second level, and the polarities of the first level and the second level are opposite; the output end of the main driving on module 110 is connected with the output end of the main driving off module 120 and then connected with the driving signal output end Drive; the main driving conducting module 110 is configured to output a driving conducting signal according to the first level; the main driving turn-off module 120 is configured to output a driving turn-off signal according to the second level;
The output end of the auxiliary driving conduction module 130 is connected with the output end of the main driving conduction module 110; the control end of the auxiliary driving conducting module 130 is connected with the first output end V-QH of the logic control module; the output end of the auxiliary drive turn-off module 140 is connected with the output end of the main drive turn-off module 120; the control end of the auxiliary drive turn-off module 140 is connected with the second output end V-QL of the logic control module;
The first input end of the logic control module is connected with the driving signal output end Drive, and the logic control module 150 is configured to output a first logic control signal through the first logic control end according to the driving conducting signal; the auxiliary driving conducting module 130 is configured to increase the current of the driving conducting signal in an auxiliary manner according to the first logic control signal; the logic control module 150 is configured to output a second logic control signal through the second logic control terminal according to the driving conducting signal; the auxiliary driving turn-off module 140 is configured to increase the current of the driving turn-off signal in an auxiliary manner according to the second logic control signal.
Specifically, the main driving turn-on module 110 and the auxiliary driving turn-on module 130 are connected in parallel, and the main driving turn-off module 120 and the auxiliary driving turn-off module 140 are connected in parallel. In the power semiconductor device opening process, the main driving conducting module 110 and the auxiliary driving conducting module 130 are both conducted, and the driving current is increased through the parallel auxiliary driving conducting module 130, so that the miller platform passing through the power semiconductor can be accelerated. In the power semiconductor device turn-off process, the main driving turn-off module 120 and the auxiliary driving turn-off module 140 are both turned on, and the driving current is increased through the parallel auxiliary driving turn-off module 140, so that the miller platform passing through the power semiconductor can be accelerated.
The driving circuit of the power semiconductor is exemplified by the following working procedures: the pulse control signal output terminal OUT outputs a pulse control signal of a first level, at this time, the main driving on module 110 is turned on, and the main driving off module 120 is turned off, at this time, the driving on signal is provided by the power signal VG, and is output to the power semiconductor device through the driving signal output terminal Drive. The logic control module 150 outputs a first logic control signal according to the driving on signal of the driving signal output terminal Drive, and at this time, the auxiliary driving on module 130 is turned on according to the first logic control signal, and the auxiliary driving off module 140 is in an off state. The current of the driving conduction signal at this time is increased due to the incorporation of the auxiliary driving conduction module 130, so that the driving current can be accelerated through the miller stage of the power semiconductor, and the turn-on loss of the power semiconductor can be reduced.
The pulse control signal output terminal OUT outputs a pulse control signal of a second level, at this time, the main driving turn-off module 120 is turned on, the main driving turn-on module 110 is turned off, at this time, the voltage of the driving output terminal Drive is connected to the power signal ground COM, the logic control module outputs a second logic control signal according to the driving turn-off signal 120, at this time, the auxiliary driving turn-off module 140 is turned on according to the second logic control signal, and the auxiliary driving turn-on module 130 is in a turn-off state. The current of the driving turn-off signal at this time increases the driving current due to the incorporation of the auxiliary driving turn-off module 140, so that the miller stage passing through the power semiconductor can be accelerated, thereby reducing the turn-off loss of the power semiconductor.
According to the technical scheme provided by the embodiment of the invention, the logic control module sends a logic signal to control the auxiliary driving on module and the auxiliary driving off module. When a driving conduction signal is output, the logic control module controls the auxiliary driving conduction module to conduct, so that the current of the driving conduction signal is increased in an auxiliary mode; when the driving turn-off signal is output, the logic control module controls the auxiliary driving turn-off module to be turned on, so that the current of the driving turn-off signal is increased in an auxiliary mode. According to the switching process of the power semiconductor device, the driving signal current is correspondingly adjusted, so that the driving of the power semiconductor is always in an optimal state, the switching loss of the power semiconductor is reduced, and the switching efficiency is improved.
Optionally, the logic control module is further configured to output the first logic control signal when the driving conduction signal is smaller than a first reference signal or the driving conduction signal is larger than a second reference signal;
outputting the third logic control signal when the driving turn-on signal is greater than the first reference signal and less than the second reference signal;
Outputting the second logic control signal when the driving turn-off signal is smaller than the first reference signal or the driving turn-off signal is larger than the second reference signal;
Outputting the fourth logic control signal when the driving off signal is greater than the first reference signal and less than the second reference signal; wherein the first reference signal comprises a threshold voltage value of the power semiconductor device; the second reference signal includes a miller plateau voltage value of the power semiconductor device.
Specifically, the logic control module presets a first reference voltage and a second reference voltage, and the first reference voltage is set to be a threshold voltage value of the power semiconductor device and the second reference voltage is set to be a miller platform voltage value of the power semiconductor device according to performance characteristics of the power semiconductor device. When the logic control module inputs a driving conduction signal, the logic control module compares the driving conduction signal with a threshold voltage value and a miller platform voltage value, and outputs a first logic control signal when the driving conduction signal is smaller than the threshold voltage value or the driving conduction signal is larger than the miller platform voltage value, at the moment, the auxiliary driving conduction module is conducted, the auxiliary driving shutoff module is turned off, the auxiliary driving conduction module is integrated, and then the driving conduction signal current is increased. And outputting the third logic control signal when the driving on signal is larger than a threshold voltage value and smaller than a miller platform voltage value, turning off the auxiliary driving on module, turning off the auxiliary driving off module, canceling the combination of the auxiliary driving on module, and outputting the auxiliary driving on module by the main driving on module alone.
When the logic control module inputs a drive turn-off signal, the logic control module compares the drive turn-off signal with a threshold voltage value and a miller platform voltage value, and outputs a second logic control signal when the drive turn-off signal is smaller than the threshold voltage value or the drive turn-off signal is larger than the miller platform voltage value, at the moment, the auxiliary drive turn-off module is turned on, the auxiliary drive turn-on module is turned off, the auxiliary drive turn-off module is integrated, and then the drive turn-off signal current is increased. And when the driving turn-off signal is larger than a threshold voltage value and smaller than a miller platform voltage value, outputting the fourth logic control signal, turning off the auxiliary driving turn-off module, turning off the auxiliary driving turn-on module, canceling the combination of the auxiliary driving turn-off module, and outputting the auxiliary driving turn-off module by the main driving turn-off module alone.
According to the embodiment of the invention, the drive on signal and the drive off signal at the drive output end are compared with the threshold voltage value of the power semiconductor device and the miller platform voltage value of the power semiconductor device, and when the threshold voltage value and the miller platform voltage value are out of the same, the auxiliary drive on module or the auxiliary drive off module is incorporated so as to achieve the purpose of increasing the drive current to quickly pass through the miller platform, but in order to protect the device, the drive current of the drive on signal and the drive off signal is required to be properly reduced when the drive on signal and the drive off signal are respectively between the threshold voltage value and the miller platform voltage value, and therefore, the dynamic on signal and the drive off signal are not incorporated into the auxiliary drive on module or the auxiliary drive off module when the drive on signal and the drive off module are respectively between the threshold voltage value and the miller platform voltage value so as to protect the power semiconductor device.
Fig. 2 is a schematic structural diagram of a driving circuit of another power semiconductor device according to an embodiment of the present invention, referring to fig. 2, the main driving on module 110 includes a first switching tube Q1 and a first resistor R1, and the main driving off module 120 includes a second switching tube Q3 and a second resistor R4;
The control end of the first switching tube Q1 is connected with the control end of the second switching tube Q3 and then connected with the pulse control signal; the second end of the first switching tube Q1 is connected with a power supply signal VG, and the first end of the first switching tube Q1 is connected with the output end of the main driving module through the first resistor R1; the first end of the second switching tube Q3 is connected with the output end of the main driving module through the second resistor R4, and the second end of the second switching tube Q3 is grounded; the first switching tube Q1 is used for being conducted when the pulse control signal is of a first level; the second switching tube is used for being conducted when the pulse control signal is of a second level.
Specifically, the first switching tube Q1 and the second switching tube Q3 may be turned on and off according to a level signal, and the first switching tube Q1 is an NPN transistor, the second switching tube Q3 is a PNP transistor, the first level is a high level, and the second level is a low level. The main driving conduction module 110 has the following working procedures: when the pulse control signal output terminal OUT outputs the pulse control signal at the first level, i.e., the high level, the first switching tube Q1 is turned on, the second switching tube Q3 is turned off, and the power signal VG is output to the rear-stage power semiconductor device connected to the driving signal output terminal through the first resistor R1. The main driving shutdown module 120 operates as follows: when the pulse control signal output end OUT outputs the pulse control signal to be at the second level, namely the low level, the first switching tube Q1 is turned off, the second switching tube Q3 is turned on, the driving signal output end Drive is connected with the power signal grounding end COM and is turned on, the driving signal output end Drive, the second resistor R4 and the second switching tube Q3 are turned on in a loop, and the rear-stage power semiconductor device is turned off. The first resistor R1 and the second resistor R4 are current limiting protection resistors.
Fig. 3 is a schematic structural diagram of a driving circuit of another power semiconductor device according to an embodiment of the present invention, referring to fig. 3, the auxiliary driving on module 130 includes a third switching tube Q2 and a fourth resistor R2, and the auxiliary driving off module 140 includes a fourth switching tube Q4 and a fifth resistor R5;
The control end of the third switching tube Q2 is connected with the first output end V-QH of the logic control module, the second end of the third switching tube Q2 is connected with a power signal VG, the first end of the third switching tube Q2 is connected with the driving signal output end through the fourth resistor R2, the control end of the fourth switching tube Q4 is connected with the second output end V-QL of the logic control module, the second end of the fourth switching tube is grounded, and the first end of the fourth switching tube Q4 is connected with the driving signal output end through the fifth resistor R5; the third switching tube Q2 is used for being conducted according to the first logic control signal; the fourth switching tube Q4 is configured to be turned on according to the second logic control signal.
Specifically, the third switching tube Q2 and the fourth switching tube Q4 may be turned on and off according to a logic control signal, and exemplary, the third switching tube Q2 is an NPN transistor, the fourth switching tube Q4 is a PNP transistor, the first logic control signal is a high level signal, the second logic control signal is a low level signal, and the third switching tube Q2 and the fourth switching tube Q4 are controlled to be turned on and off by the high level or the low level signal. The working process is as follows: the logic control module 150 outputs a first logic control signal, i.e. a high level signal, according to the driving on signal, so that the third switching tube Q2 is turned on, the fourth switching tube Q4 is turned off, and at this time, an auxiliary driving on loop formed by the power signal VG, the third switching tube Q2 and the fourth resistor R2 is integrated, thereby increasing the driving on signal current. The logic control module outputs a first logic control signal, namely a low level signal, so that the fourth switching tube Q4 is turned on, the third switching tube Q2 is turned off, and an auxiliary drive turn-off loop formed by the power supply signal ground COM, the fourth switching tube Q4 and the fifth resistor R5 is combined, so that the drive turn-on signal current is increased.
Based on the above embodiments, fig. 4 is a schematic structural diagram of a logic control module according to an embodiment of the present invention, referring to fig. 4, where the logic control module includes a comparing unit and a signal processing unit;
A first input end of the comparing unit 410 is connected with the driving signal output end Drive, a second input end of the comparing unit 410 is connected with the first reference signal output end VTH, and a third input end of the comparing unit 410 is connected with the second reference signal output end VP; the comparing unit 410 is configured to output a first signal when the driving on signal is smaller than the first reference signal or the driving on signal is larger than the second reference signal, and output a second signal when the driving off signal is smaller than the first reference signal or the driving off signal is larger than the second reference signal; a first input terminal of the signal processing unit 420 is connected to an output terminal of the comparing unit 410; a second input end of the signal processing unit 420 is connected with a pulse control signal; ; the signal processing unit 420 is configured to output the first logic control signal according to the first signal and the first level, and output the second logic control signal according to the second signal and the second level.
Specifically, the comparing unit 410 may preset the first reference voltage and the second reference voltage internally or access the first reference voltage and the second reference voltage respectively. The first reference voltage and the second reference voltage may be set to a threshold voltage Vth of the power semiconductor device and a miller plateau voltage Vplateau of the power semiconductor device, respectively, according to the power semiconductor device, for example. The comparing unit 410 compares the relationship among the driving on signal, the threshold voltage Vth and the miller plateau voltage Vplateau, and when the driving on signal is smaller than the threshold voltage Vth or greater than the miller plateau voltage Vplateau, the comparing unit 410 outputs a first signal; when the driving on signal is greater than the threshold voltage Vth and less than the miller plateau voltage Vplateau, the comparison unit 410 outputs a third signal; when the driving turn-off signal is smaller than the threshold voltage Vth or larger than the miller plateau voltage Vplateau, the comparing unit 410 outputs a second signal; when the driving turn-off signal is greater than the threshold voltage Vth and less than the miller plateau voltage Vplateau, the comparison unit 410 outputs a fourth signal. The first signal, the second signal, the third signal and the fourth signal may be analog signals or digital signals, which are not limited. The signal processing unit 420 may output the first logic control signal, the second logic control signal, the third logic control signal, and the fourth logic control signal according to the first signal, the second signal, the third signal, and the fourth signal output from the comparison unit 410, respectively. The starting process of the power semiconductor device is realized through the logic control signal, and the auxiliary driving on module is incorporated or turned off; and the power semiconductor device is turned off, an auxiliary driving turn-off or turn-off auxiliary driving turn-off module is integrated, and the driving of the power semiconductor is always in an optimal state through the sectional driving control of the power semiconductor turn-on and turn-off process, so that the switching loss of the power semiconductor is reduced, and the efficiency is improved.
Fig. 5 is a schematic structural diagram of another logic control module according to an embodiment of the present invention, referring to fig. 5, the comparing unit 410 includes a first comparator U3C, a second comparator U3D, a sixth resistor R6, a seventh resistor R7, a second comparator U3D, an eighth resistor R8, a ninth resistor R9, and a first nand gate U4; the first input end of the first comparator U3C is connected with the driving signal output end Drive through the seventh resistor R7, the second input end of the first comparator U3C is connected with the first reference signal output end VTH through the sixth resistor R6,
The first input end of the second comparator U3D is connected with the second reference signal output end VP through the ninth resistor R9, and the second input end of the second comparator U3D is connected with the driving signal output end Drive through the eighth resistor R8;
The first input end of the first NAND gate U4 is connected with the output end of the first comparator U3C; the second input end of the first NAND gate U4 is connected with the U3D output end of the second comparator; the first nand gate U4 is configured to output a first signal when the driving on signal is smaller than the first reference signal or the driving on signal is larger than the second reference signal, and output a second signal when the driving off signal is smaller than the first reference signal or the driving off signal is larger than the second reference signal.
Specifically, the first signal and the second signal may be analog signals or digital signals, which are not limited herein. In this embodiment, the first signal and the second signal are digital signals, and according to the performance characteristics of the power semiconductor device, the first reference voltage is set to the threshold voltage Vth of the power semiconductor device, and the second reference voltage is set to the miller plateau voltage Vplateau of the power semiconductor device. The positive electrode end signal of the comparator outputs a high level signal when being greater than the negative electrode end signal, and the positive electrode end signal of the comparator outputs a low level signal when being less than the negative electrode end signal, and the first end of the first comparator U3C is an anode end, the second end of the first comparator U3C is a cathode end, the first end of the second comparator U3D is an anode end, and the second end of the second comparator U3D is a cathode end.
The comparing unit 410 operates as follows: when the driving conducting signal is smaller than the threshold voltage value Vth, the first comparator U3C outputs a low level, the second comparator U3D outputs a high level, and the two paths of signals output a first signal after passing through the first NAND gate U4, and at the moment, the first signal is a high level; when the driving conducting signal is larger than the miller stage voltage value Vplateau, the first comparator U3C outputs a high level, the second comparator U3D outputs a low level, and the two paths of signals output a first signal after passing through the first NAND gate U4, and at the moment, the first signal is a high level.
When the driving on signal is greater than the threshold voltage Vth and less than the miller stage voltage Vplateau, the first comparator U3C outputs a high level, and the second comparator U3D outputs a high level. The two signals output a third signal after passing through the first NAND gate U4, and the third signal is at a low level.
When the driving turn-off signal is greater than the miller stage voltage value Vplateau, the first comparator U3C outputs a high level, the second comparator U3D outputs a low level, and the two signals pass through the first nand gate U4 and then output a second signal, where the second signal is at a high level. When the driving turn-off signal is smaller than the threshold voltage Vth, the first comparator U3C outputs a high level and the second comparator U3D outputs a low level. The two signals output a second signal after passing through the first NAND gate U4, and the second signal is at a high level.
When the driving turn-off signal is greater than the threshold voltage Vth and less than the miller plateau voltage Vplateau, the first comparator U3C outputs a high level, and the second comparator U3D outputs a high level. The two signals pass through the first NAND gate U4 and then output a fourth signal, and the fourth signal is at a low level.
Based on the above embodiment, fig. 6 is a schematic structural diagram of another logic control module according to the embodiment of the present invention, and referring to fig. 6 in conjunction with fig. 3, the signal processing unit includes an and gate U2, a second nand gate U5, an inverter U6, a tenth resistor R10, and an eleventh resistor R11;
The first end of the AND gate U2 is connected with a pulse control signal; the second end of the AND gate U2 is connected with the output end of the comparison unit 410; the output end of the AND gate U2 is connected with the first output end V-QH of the logic control module through the tenth resistor R10; the and gate U2 is configured to output a first logic control signal when the comparison unit 410 outputs the first signal;
The input end of the inverter U6 is connected with a pulse control signal; the second input end of the second nand gate U5 is connected to the output end of the inverter U6, and the first input end of the second nand gate U5 is connected to the output end of the comparing unit 410; the second NAND gate U5 is connected with the second output end V-QL of the logic control module through the eleventh resistor R11; the nand gate U5 is configured to output a second logic control signal when the comparison unit 410 outputs the second signal.
Specifically, when the pulse control signal output terminal OUT outputs the pulse control signal to the first level, the exemplary first level is a high level. At this time, when the driving on signal is smaller than the threshold voltage Vth or greater than the miller stage voltage Vplateau, the comparison unit 410 outputs the first signal, i.e. the high level, and the and gate U2 outputs the high level, and the second nand gate U5 outputs the high level. At this time, the high level output by the and gate U2 and the high level output by the second nand gate U5 constitute the first logic control signal.
When the driving on signal is greater than the threshold voltage Vth and less than the miller stage voltage Vplateau, the comparison unit 410 outputs a third signal, i.e., a low level, and the and gate U2 outputs a low level, and the second nand gate U5 outputs a high level. At this time, the low level output by the and gate U2 and the high level output by the second nand gate U5 constitute the third logic control signal.
When the pulse control signal output terminal OUT outputs the pulse control signal to a second level, the exemplary second level is a low level. At this time, when the driving turn-off signal is smaller than the threshold voltage Vth or larger than the miller stage voltage Vplateau, the comparison unit 410 outputs a second signal, i.e., a high level, and the and gate U2 outputs a low level, and the second nand gate U5 outputs a low level. At this time, the low level output by the and gate U2 and the low level output by the second nand gate U5 constitute a second logic control signal.
When the driving turn-off signal is greater than the threshold voltage Vth and less than the miller plateau voltage Vplateau, the comparison unit 410 outputs a fourth signal, i.e., a low level, and the and gate U2 outputs a low level, and the second nand gate U5 outputs a low level. At this time, the low level output by the and gate U2 and the high level output by the second nand gate U5 constitute the fourth logic control signal.
Fig. 7 is a schematic structural diagram of a driving circuit of a power semiconductor device according to an embodiment of the present invention, referring to fig. 7, the driving circuit of a power semiconductor device further includes a strong and weak electric signal isolation and level conversion module U1, a control end of the main driving turn-on module 110 is connected to a control end of the main driving turn-off module 120, and then is connected to an output end of the strong and weak electric signal isolation and level conversion module U1, and the strong and weak electric signal isolation and level conversion module U1 is configured to provide the pulse control signal.
Specifically, the first pin andde of the strong and weak electric signal isolation and level conversion module U1 is connected to the weak electric side pulse modulation signal input end IN, i.e. the pulse modulation signal, the second pin NC of the strong and weak electric signal isolation and level conversion module U1 is suspended, the third pin CATHODE of the strong and weak electric signal isolation and level conversion module U1 is connected to the weak electric side power ground GND, the fourth pin VEE of the strong and weak electric signal isolation and level conversion module U1 is connected to the power signal ground COM, the fifth pin VOUT of the strong and weak electric signal isolation and level conversion module U1 outputs a converted pulse control signal, the pulse control signal is connected to the main driving turn-on module 110 and the main driving turn-off module 120, and the sixth pin VCC of the strong and weak electric signal isolation and level conversion module U1 is connected to the power signal VG, and is powered by the power signal VG. The strong and weak electric signal isolation and level conversion module converts the weak point side pulse modulation signal into a pulse control signal of the power supply signal side, and isolates the weak current side signal from the power supply signal side signal so as to avoid signal interference.
With continued reference to fig. 7, the driving circuit of the power semiconductor device further includes a current limiting resistor R3, where an output end of the strong and weak electric signal isolation and level conversion module U1 is connected to a control end of the main driving turn-on module 110 and a control end of the main driving turn-off module 120 through the current limiting resistor R3; the current limiting resistor R3 is used for current limiting protection of a later-stage circuit. Specifically, the current limiting resistor R3 is connected in series with the signal input end, so that the current limiting protection of the rear-stage circuit is realized, and the protection of the rear-stage circuit is improved.
The embodiment of the invention also provides a power semiconductor device, which comprises the driving circuit of the power semiconductor device, wherein the output end of the driving circuit is electrically connected with the control end of the power semiconductor device.
Specifically, the control end of the power semiconductor is connected with the output end of the driving circuit, and the driving circuit improved by the embodiment of the invention controls driving. The power semiconductor device provided by the embodiment of the invention and the driving circuit provided by any embodiment of the invention belong to the same invention conception, have corresponding beneficial effects, and the technical details not elaborated in the embodiment are detailed in the driving circuit of the power semiconductor provided by any embodiment of the invention.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and are not limiting; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present invention.
Claims (9)
1. A drive circuit of a power semiconductor device, comprising: the device comprises a driving signal output end, a main driving on module, a main driving off module, an auxiliary driving on module, an auxiliary driving off module and a logic control module;
The control end of the main drive on module is connected with the control end of the main drive off module and then connected with a pulse control signal, wherein the pulse control signal comprises a first level and a second level, and the polarities of the first level and the second level are opposite; the output end of the main drive on module is connected with the output end of the main drive off module and then is connected with the drive signal output end; the main driving conduction module is used for outputting a driving conduction signal according to the first level; the main drive turn-off module is used for outputting a drive turn-off signal according to the second level;
the output end of the auxiliary drive conduction module is connected with the output end of the main drive conduction module; the control end of the auxiliary drive conduction module is connected with the first output end of the logic control module; the output end of the auxiliary drive shutoff module is connected with the output end of the main drive shutoff module; the control end of the auxiliary drive turn-off module is connected with the second output end of the logic control module;
The first input end of the logic control module is connected with the driving signal output end, and the logic control module is used for outputting a first logic control signal through the first logic control end according to the driving conduction signal; the auxiliary drive conduction module is used for increasing the current of the drive conduction signal in an auxiliary manner according to the first logic control signal; the logic control module is used for outputting a second logic control signal through a second logic control end according to the driving conduction signal; the auxiliary drive turn-off module is used for increasing the current of the drive turn-off signal in an auxiliary manner according to the second logic control signal;
The logic control module comprises a comparison unit and a signal processing unit;
The first input end of the comparison unit is connected with the driving signal output end, the second input end of the comparison unit is connected with the first reference signal output end, and the third input end of the comparison unit is connected with the second reference signal output end; the comparison unit is used for outputting a first signal when the driving on signal is smaller than the first reference signal or the driving on signal is larger than the second reference signal, and outputting a second signal when the driving off signal is smaller than the first reference signal or the driving off signal is larger than the second reference signal; the first input end of the signal processing unit is connected with the output end of the comparison unit; a second input end of the signal processing unit is connected with a pulse control signal; the signal processing unit is used for outputting the first logic control signal according to the first signal and the first level, and outputting the second logic control signal according to the second signal and the second level.
2. The driving circuit of a power semiconductor device according to claim 1, wherein,
The logic control module is further configured to output the first logic control signal when the driving conduction signal is smaller than a first reference signal or the driving conduction signal is larger than the second reference signal;
outputting a third logic control signal when the driving turn-on signal is greater than the first reference signal and less than the second reference signal;
Outputting the second logic control signal when the driving turn-off signal is smaller than the first reference signal or the driving turn-off signal is larger than the second reference signal;
Outputting a fourth logic control signal when the drive off signal is greater than the first reference signal and less than the second reference signal; wherein the first reference signal comprises a threshold voltage value of the power semiconductor device; the second reference signal includes a miller plateau voltage value of the power semiconductor device.
3. The drive circuit of a power semiconductor device according to claim 1, wherein the main drive turn-on module includes a first switching tube and a first resistor, and the main drive turn-off module includes a second switching tube and a second resistor;
The control end of the first switching tube is connected with the control end of the second switching tube and then connected with the pulse control signal; the second end of the first switching tube is connected with a power supply signal, and the first end of the first switching tube is connected with the output end of the main driving conduction module through the first resistor; the first end of the second switching tube is connected with the output end of the main drive turn-off module through the second resistor, and the second end of the second switching tube is grounded; the first switching tube is used for being conducted when the pulse control signal is of a first level; the second switching tube is used for being conducted when the pulse control signal is of a second level.
4. The driving circuit of a power semiconductor device according to claim 1, wherein the auxiliary driving turn-on module includes a third switching tube and a fourth resistor, and the auxiliary driving turn-off module includes a fourth switching tube and a fifth resistor;
The control end of the third switching tube is connected with the first output end of the logic control module, the second end of the third switching tube is connected with a power supply signal, the first end of the third switching tube is connected with the driving signal output end through the fourth resistor, the control end of the fourth switching tube is connected with the second output end of the logic control module, the second end of the fourth switching tube is grounded, and the first end of the fourth switching tube is connected with the driving signal output end through the fifth resistor; the third switching tube is used for being conducted according to the first logic control signal; the fourth switching tube is used for being conducted according to the second logic control signal.
5. The driving circuit of a power semiconductor device according to claim 1, wherein the comparing unit includes a first comparator, a second comparator, a sixth resistor, a seventh resistor, a second comparator, an eighth resistor, a ninth resistor, and a first nand gate; the first input end of the first comparator is connected with the driving signal output end through the seventh resistor, and the second input end of the first comparator is connected with the first reference signal output end through the sixth resistor;
The first input end of the second comparator is connected with the second reference signal output end through the ninth resistor, and the second input end of the second comparator is connected with the driving signal output end through the eighth resistor;
The first input end of the first NAND gate is connected with the output end of the first comparator; the second input end of the first NAND gate is connected with the output end of the second comparator; the first NAND gate is used for outputting a first signal when the driving on signal is smaller than the first reference signal or the driving on signal is larger than the second reference signal, and outputting a second signal when the driving off signal is smaller than the first reference signal or the driving off signal is larger than the second reference signal.
6. The driving circuit of a power semiconductor device according to claim 1, wherein the signal processing unit includes an and gate, a second nand gate, an inverter, a tenth resistor, and an eleventh resistor;
The first end of the AND gate is connected with a pulse control signal; the second end of the door is connected with the output end of the comparison unit; the AND gate output end is connected with the first output end of the logic control module through the tenth resistor; the AND gate is used for outputting a first logic control signal when the comparison unit outputs the first signal;
The input end of the inverter is connected with a pulse control signal; the second input end of the second NAND gate is connected with the output end of the inverter, and the first input end of the second NAND gate is connected with the output end of the comparison unit; the second NAND gate is connected with the second output end of the logic control module through the eleventh resistor; the NAND gate is used for outputting a second logic control signal when the comparison unit outputs the second signal.
7. The driving circuit of claim 1, further comprising a strong and weak electric signal isolation and level conversion module, wherein the control end of the main driving turn-on module is connected with the control end of the main driving turn-off module and then is connected with the output end of the strong and weak electric signal isolation and level conversion module, and the strong and weak electric signal isolation and level conversion module is used for providing the pulse control signal.
8. The driving circuit of the power semiconductor device according to claim 7, further comprising a current limiting resistor, wherein the output end of the strong and weak electric signal isolation and level conversion module is connected with the control end of the main driving turn-on module and the control end of the main driving turn-off module through the current limiting resistor; the current limiting resistor is used for limiting current and protecting a later-stage circuit.
9. A power semiconductor device comprising a drive circuit of a power semiconductor device according to any of claims 1-8, the output of the drive circuit being electrically connected to the control terminal of the power semiconductor device.
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| CN104518699A (en) * | 2013-09-30 | 2015-04-15 | 艾默生网络能源有限公司 | Current limit control method, current limit control device and current limit control system of three-level inverter |
| CN105632438A (en) * | 2016-01-08 | 2016-06-01 | 京东方科技集团股份有限公司 | Level offset unit, level offset circuit and drive method, and grid drive circuit |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101976939A (en) * | 2010-09-30 | 2011-02-16 | 安徽工业大学 | MOSFET driving chip of current source |
| CN103560655A (en) * | 2013-09-27 | 2014-02-05 | 株洲变流技术国家工程研究中心有限公司 | Driver and system thereof based on parallel connection of multiple power semiconductor devices |
| CN104518699A (en) * | 2013-09-30 | 2015-04-15 | 艾默生网络能源有限公司 | Current limit control method, current limit control device and current limit control system of three-level inverter |
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