CN113726319A - Power semiconductor drive circuit and power semiconductor device - Google Patents
Power semiconductor drive circuit and power semiconductor device Download PDFInfo
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- CN113726319A CN113726319A CN202110996026.6A CN202110996026A CN113726319A CN 113726319 A CN113726319 A CN 113726319A CN 202110996026 A CN202110996026 A CN 202110996026A CN 113726319 A CN113726319 A CN 113726319A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0036—Means reducing energy consumption
Abstract
The invention discloses a driving circuit of a power semiconductor device and the power semiconductor device. The driving circuit comprises a driving signal output end, a main driving conduction module, a main driving turn-off module, an auxiliary driving conduction module, an auxiliary driving turn-off module and a logic control module; the logic control module is used for outputting a first logic control signal through a first logic control end according to the driving conduction signal; the auxiliary driving conducting module is used for increasing the current of the driving conducting signal in an auxiliary mode according to the first logic control signal; the logic control module is used for outputting a second logic control signal through a second logic control end according to the driving conduction signal; the auxiliary driving turn-off module is used for assisting in increasing the current of the driving turn-off signal according to the second logic control signal. The technical scheme provided by the invention realizes auxiliary adjustment of the driving signal according to the switching process of the power semiconductor device, reduces the switching loss of the power semiconductor and improves the switching efficiency.
Description
Technical Field
The present invention relates to electronic driving technologies, and in particular, to a power semiconductor driving circuit and a power semiconductor device.
Background
With the advancement of power semiconductor device technology, the power density of power semiconductor devices is continuously increasing. The requirements on the driving circuit of the device are also increasing.
In the prior art, a power semiconductor driving loop is single, and output signals of the driving loop cannot be adjusted in real time according to the characteristics of a power semiconductor device and the state of the device in the switching process of the power semiconductor device, so that the loss of the device in the switching process is too high.
Disclosure of Invention
The invention provides a power semiconductor driving circuit and a power semiconductor device, which realize auxiliary adjustment of a driving signal according to the switching process of the power semiconductor device, reduce the switching loss of the power semiconductor and improve the switching efficiency.
An embodiment of the present invention provides a driving circuit of a power semiconductor device, including: the device comprises a driving signal output end, a main driving conduction module, a main driving turn-off module, an auxiliary driving conduction module, an auxiliary driving turn-off module and a logic control module;
a control end of the main drive switch-on module and a control end of the main drive switch-off module are connected and then connected with a pulse control signal, wherein the pulse control signal comprises a first level and a second level, and the polarity of the first level is opposite to that of the second level; the output end of the main drive switch-on module is connected with the output end of the main drive switch-off module and then connected with the drive signal output end; the main driving conducting module is used for outputting a driving conducting signal according to the first level; the main driving turn-off module is used for outputting a driving turn-off signal according to the second level;
the output end of the auxiliary driving conduction module is connected with the output end of the main driving conduction module; the control end of the auxiliary drive conduction module is connected with the first output end of the logic control module; the output end of the auxiliary drive turn-off module is connected with the output end of the main drive turn-off module; the control end of the auxiliary drive turn-off module is connected with the second output end of the logic control module;
the first input end of the logic control module is connected with the driving signal output end, and the logic control module is used for outputting a first logic control signal through the first logic control end according to the driving conduction signal; the auxiliary driving conducting module is used for increasing the current of the driving conducting signal in an auxiliary mode according to the first logic control signal; the logic control module is used for outputting a second logic control signal through the second logic control end according to the driving conduction signal; the auxiliary driving turn-off module is used for increasing the current of the driving turn-off signal in an auxiliary mode according to the second logic control signal.
Optionally, the logic control module is further configured to output the first logic control signal when the driving turn-on signal is smaller than a first reference signal or the driving turn-on signal is greater than a second reference signal,
outputting the third logic control signal when the driving turn-on signal is greater than the first reference signal and less than the second reference signal;
outputting the second logic control signal when the driving turn-off signal is smaller than the first reference signal or the driving turn-off signal is greater than the second reference signal;
when the driving turn-off signal is greater than the first reference signal and less than the second reference signal, outputting the fourth logic control signal; wherein the first reference signal comprises a threshold voltage value of the power semiconductor device; the second reference signal comprises a miller platform voltage value of the power semiconductor device.
Optionally, the main driving turn-on module includes a first switching tube and a first resistor, and the main driving turn-off module includes a second switching tube and a second resistor;
the control end of the first switch tube is connected with the control end of the second switch tube and then is connected with the pulse control signal; the second end of the first switch tube is connected with a power supply signal, and the first end of the first switch tube is connected with the output end of the main driving module through the first resistor; the first end of the second switch tube is connected with the output end of the main driving module through the second resistor, and the second end of the second switch tube is grounded; the first switch tube is used for conducting when the pulse control signal is at a first level; the second switch tube is used for conducting when the pulse control signal is at a second level.
Optionally, the auxiliary driving turn-on module includes a third switching tube and a fourth resistor, and the auxiliary driving turn-off module includes a fourth switching tube and a fifth resistor;
the control end of the third switch tube is connected with the first output end of the logic control module, the second end of the third switch tube is connected with a power supply signal, the first end of the third switch tube is connected with the driving signal output end through a fourth resistor, the control end of the fourth switch tube is connected with the second output end of the logic control module, the second end of the fourth switch tube is grounded, and the first end of the fourth switch tube is connected with the driving signal output end through a fifth resistor; the third switching tube is used for conducting according to the first logic control signal; and the fourth switching tube is used for conducting according to the second logic control signal.
Optionally, the logic control module includes a comparing unit and a signal processing unit;
the first input end of the comparison unit is connected with the drive signal output end, the second input end of the comparison unit is connected with the first reference signal output end, and the third input end of the comparison unit is connected with the second reference signal output end; the comparison unit is used for outputting a first signal when the driving on signal is smaller than the first reference signal or the driving on signal is larger than the second reference signal, and outputting a second signal when the driving off signal is smaller than the first reference signal or the driving off signal is larger than the second reference signal; the first input end of the signal processing unit is connected with the output end of the comparison unit; a second input end of the signal processing unit is connected with a pulse control signal; (ii) a The signal processing unit is used for outputting the first logic control signal according to the first signal and the first level and outputting the second logic control signal according to the second signal and the second level.
Optionally, the comparison unit includes a first comparator, a second comparator, a sixth resistor, a seventh resistor, a second comparator, an eighth resistor, a ninth resistor, and a first nand gate; the first input end of the first comparator is connected with the driving signal output end through the seventh resistor, the second input end of the first comparator is connected with the first reference signal output end through the sixth resistor,
the first input end of the second comparator is connected with the second reference signal output end through the ninth resistor, and the second input end of the second comparator is connected with the driving signal output end through the eighth resistor;
the first input end of the first NAND gate is connected with the output end of the first comparator; the second input end of the first NAND gate is connected with the output end of the second comparator; the first nand gate is configured to output a first signal when the driving turn-on signal is smaller than the first reference signal or the driving turn-on signal is larger than the second reference signal, and output a second signal when the driving turn-off signal is smaller than the first reference signal or the driving turn-off signal is larger than the second reference signal.
Optionally, the signal processing unit includes an and gate, a second nand gate, an inverter, a tenth resistor, and an eleventh resistor;
the first end of the AND gate is connected with a pulse control signal; the second end of the AND gate is connected with the output end of the comparison unit; the output end of the AND gate is connected with the first output end of the logic control module through the tenth resistor; the AND gate is used for outputting a first logic control signal when the comparison unit outputs the first signal;
the input end of the phase inverter is connected with a pulse control signal; the second input end of the second NAND gate is connected with the output end of the phase inverter, and the first input end of the second NAND gate is connected with the output end of the comparison unit; the second NAND gate is connected with the second output end of the logic control module through the eleventh resistor; the nand gate is used for outputting a second logic control signal when the comparison unit outputs the second signal.
Optionally, the driving circuit of the power semiconductor device further includes a strong and weak electric signal isolation and level conversion module, the control end of the main drive switch-on module and the control end of the main drive switch-off module are connected and then connected to the output end of the strong and weak electric signal isolation and level conversion module, and the strong and weak electric signal isolation and level conversion module is used for providing the pulse control signal.
Optionally, the driving circuit of the power semiconductor device further includes a current-limiting resistor, and an output end of the strong and weak electrical signal isolation and level conversion module is connected to a control end of the main driving turn-on module and a control end of the main driving turn-off module through the current-limiting resistor; the current-limiting resistor is used for current-limiting protection of a post-stage circuit.
In a second aspect, an embodiment of the present invention provides a power semiconductor device, including a driving circuit of the power semiconductor device according to any one of the embodiments of the present invention, where an output terminal of the driving circuit is electrically connected to a control terminal of the power semiconductor device.
According to the technical scheme provided by the embodiment of the invention, the logic control module is used for sending the logic signal to control the auxiliary drive connection module and the auxiliary drive disconnection module to be connected. When the driving conduction signal is output, the logic control module controls the auxiliary driving conduction module to conduct, so that the current of the driving conduction signal is increased in an auxiliary mode; when the driving turn-off signal is output, the logic control module controls the auxiliary driving turn-off module to be conducted, so that the current of the driving turn-off signal is increased in an auxiliary mode. The driving signal current is correspondingly adjusted according to the switching process of the power semiconductor device, so that the driving of the power semiconductor is always in the optimal state, the switching loss of the power semiconductor is reduced, and the switching efficiency is improved.
Drawings
Fig. 1 is a schematic structural diagram of a driving circuit of a power semiconductor device according to an embodiment of the present invention.
Fig. 2 is a schematic structural diagram of a driving circuit of another power semiconductor device according to an embodiment of the present invention.
Fig. 3 is a schematic structural diagram of a driving circuit of another power semiconductor device according to an embodiment of the present invention.
Fig. 4 is a schematic structural diagram of a logic control module according to an embodiment of the present invention.
Fig. 5 is a schematic structural diagram of another logic control module according to an embodiment of the present invention.
Fig. 6 is a schematic structural diagram of another logic control module according to an embodiment of the present invention.
Fig. 7 is a schematic structural diagram of a driving circuit of another power semiconductor device according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
An embodiment of the present invention provides a driving circuit of a power semiconductor device, and fig. 1 is a schematic structural diagram of the driving circuit of the power semiconductor device provided in the embodiment of the present invention, and referring to fig. 1, the driving circuit of the power semiconductor device includes: a driving signal output terminal Drive, a main driving on module 110, a main driving off module 120, an auxiliary driving on module 130, an auxiliary driving off module 140 and a logic control module 150;
a control terminal of the main drive turn-on module 110 and a control terminal of the main drive turn-off module 120 are connected and then connected to a pulse control signal, where the pulse control signal includes a first level and a second level, and the polarity of the first level is opposite to that of the second level; the output end of the main Drive on module 110 is connected with the output end of the main Drive off module 120 and then connected with the Drive signal output end Drive; the main driving conducting module 110 is configured to output a driving conducting signal according to the first level; the main driving turn-off module 120 is configured to output a driving turn-off signal according to the second level;
the output end of the auxiliary driving conduction module 130 is connected to the output end of the main driving conduction module 110; the control end of the auxiliary driving conduction module 130 is connected with the first output end V-QH of the logic control module; the output end of the auxiliary driving turn-off module 140 is connected to the output end of the main driving turn-off module 120; the control end of the auxiliary driving turn-off module 140 is connected to the second output end V-QL of the logic control module;
the first input end of the logic control module is connected to the Drive signal output end Drive, and the logic control module 150 is configured to output a first logic control signal through the first logic control end according to the Drive connection signal; the auxiliary driving conducting module 130 is configured to increase the current of the driving conducting signal in an auxiliary manner according to the first logic control signal; the logic control module 150 is configured to output a second logic control signal through the second logic control terminal according to the driving conducting signal; the auxiliary driving turn-off module 140 is configured to assist in increasing the current of the driving turn-off signal according to the second logic control signal.
Specifically, the main driving on module 110 and the auxiliary driving on module 130 are connected in parallel, and the main driving off module 120 and the auxiliary driving off module 140 are connected in parallel. In the process of starting the power semiconductor device, the main driving conducting module 110 and the auxiliary driving conducting module 130 are both conducted, and the driving current is increased through the auxiliary driving conducting module 130 connected in parallel, so that the miller platform passing through the power semiconductor device can be accelerated. In the turn-off process of the power semiconductor device, the main driving turn-off module 120 and the auxiliary driving turn-off module 140 are both turned on, and the driving current is increased through the auxiliary driving turn-off module 140 connected in parallel, so that the miller platform passing through the power semiconductor device can be accelerated.
Illustratively, the operation process of the driving circuit of the power semiconductor is as follows: the pulse control signal output terminal OUT outputs a pulse control signal of a first level, the main Drive turn-on module 110 is turned on at this time, the main Drive turn-off module 120 is turned off, and the power supply signal VG provides a Drive turn-on signal at this time, which is output to the power semiconductor device through the Drive signal output terminal Drive. The logic control module 150 outputs a first logic control signal according to the driving on signal of the driving signal output terminal Drive, at this time, the auxiliary driving on module 130 is turned on according to the first logic control signal, and the auxiliary driving off module 140 is in an off state. The current of the driving conduction signal is added to the auxiliary driving conduction module 130, so that the driving current is increased, the miller platform passing through the power semiconductor can be accelerated, and the turn-on loss of the power semiconductor is reduced.
The pulse control signal output end OUT outputs a pulse control signal of a second level, the main Drive turn-off module 120 is turned on at this time, the main Drive turn-on module 110 is turned off, the voltage of the Drive output end Drive is connected to the power signal ground COM at this time, the logic control module outputs a second logic control signal according to the Drive turn-off signal 120, the auxiliary Drive turn-off module 140 is turned on according to the second logic control signal at this time, and the auxiliary Drive turn-on module 130 is in a turn-off state. The current of the driving turn-off signal increases the driving current due to the incorporation of the auxiliary driving turn-off module 140, so that the miller platform passing through the power semiconductor can be accelerated, and the turn-off loss of the power semiconductor is reduced.
According to the technical scheme provided by the embodiment of the invention, the logic control module sends the logic signal to control the auxiliary drive connection module and the auxiliary drive disconnection module to be connected. When the driving conduction signal is output, the logic control module controls the auxiliary driving conduction module to conduct, so that the current of the driving conduction signal is increased in an auxiliary mode; when the driving turn-off signal is output, the logic control module controls the auxiliary driving turn-off module to be conducted, so that the current of the driving turn-off signal is increased in an auxiliary mode. The driving signal current is correspondingly adjusted according to the switching process of the power semiconductor device, so that the driving of the power semiconductor is always in the optimal state, the switching loss of the power semiconductor is reduced, and the switching efficiency is improved.
Optionally, the logic control module is further configured to output the first logic control signal when the driving turn-on signal is smaller than a first reference signal or the driving turn-on signal is greater than a second reference signal;
outputting the third logic control signal when the driving turn-on signal is greater than the first reference signal and less than the second reference signal;
outputting the second logic control signal when the driving turn-off signal is smaller than the first reference signal or the driving turn-off signal is greater than the second reference signal;
when the driving turn-off signal is greater than the first reference signal and less than the second reference signal, outputting the fourth logic control signal; wherein the first reference signal comprises a threshold voltage value of the power semiconductor device; the second reference signal comprises a miller platform voltage value of the power semiconductor device.
Specifically, the logic control module presets a first reference voltage and a second reference voltage, and illustratively, according to the performance characteristics of the power semiconductor device, the first reference voltage is set as a threshold voltage value of the power semiconductor device, and the second reference voltage is set as a miller platform voltage value of the power semiconductor device. When the logic control module inputs a driving conduction signal, the logic control module compares the driving conduction signal with a threshold voltage value and a Miller platform voltage value, outputs the first logic control signal when the driving conduction signal is smaller than the threshold voltage value or the driving conduction signal is larger than the Miller platform voltage value, and at the moment, the auxiliary driving conduction module is conducted, the auxiliary driving turn-off module is turned off, the auxiliary driving conduction module is merged, and further the current of the driving conduction signal is increased. And when the driving conduction signal is greater than the threshold voltage value and less than the voltage value of the Miller platform, outputting the third logic control signal, and at the moment, turning off the auxiliary driving conduction module, turning off the auxiliary driving turn-off module, and turning off the auxiliary driving conduction module, wherein the auxiliary driving conduction module is not merged and is independently output by the main driving conduction module.
When the logic control module inputs a driving turn-off signal, the logic control module compares the driving turn-off signal with a threshold voltage value and a Miller platform voltage value, outputs a second logic control signal when the driving turn-off signal is smaller than the threshold voltage value or the driving turn-off signal is larger than the Miller platform voltage value, and at the moment, the auxiliary driving turn-off module is turned on, the auxiliary driving turn-on module is turned off, the auxiliary driving turn-off module is merged, and further the driving turn-off signal current is increased. And when the driving turn-off signal is greater than the threshold voltage value and less than the voltage value of the Miller platform, outputting the fourth logic control signal, wherein the auxiliary driving turn-off module is turned off, the auxiliary driving turn-on module is turned off, the auxiliary driving turn-off module is not merged, and the auxiliary driving turn-off module is independently output by the main driving turn-off module.
In the embodiment of the invention, the driving on signal and the driving off signal of the driving output end are compared with the threshold voltage value of the power semiconductor device and the voltage value of the miller platform of the power semiconductor device, and when the driving on signal and the driving off signal are out of the threshold voltage value and the voltage value of the miller platform, the auxiliary driving on module or the auxiliary driving off module is incorporated to achieve the purpose of increasing the driving current to rapidly pass through the miller platform.
Fig. 2 is a schematic structural diagram of a driving circuit of another power semiconductor device according to an embodiment of the present invention, and referring to fig. 2, the main driving turn-on module 110 includes a first switch Q1 and a first resistor R1, and the main driving turn-off module 120 includes a second switch Q3 and a second resistor R4;
the control end of the first switch tube Q1 and the control end of the second switch tube Q3 are connected and then are connected with the pulse control signal; a second end of the first switch tube Q1 is connected to a power supply signal VG, and a first end of the first switch tube Q1 is connected to the output end of the main driving module through the first resistor R1; the first end of the second switch tube Q3 is connected with the output end of the main driving module through the second resistor R4, and the second end of the second switch tube Q3 is grounded; the first switch tube Q1 is used for conducting when the pulse control signal is at a first level; the second switch tube is used for conducting when the pulse control signal is at a second level.
Specifically, the first switch tube Q1 and the second switch tube Q3 can be turned on and off according to a level signal, for example, the first switch tube Q1 is an NPN type transistor, the second switch tube Q3 is a PNP type transistor, the first level is a high level, and the second level is a low level. The working process of the main driving conducting module 110 is as follows: when the pulse control signal output end OUT outputs the pulse control signal at the first level, i.e. the high level, the first switch tube Q1 is turned on, the second switch tube Q3 is turned off, and the power supply signal VG is output to the rear-stage power semiconductor device connected to the driving signal output end through the first resistor R1. The working process of the main driving turn-off module 120 is as follows: when the pulse control signal output end OUT outputs the pulse control signal at the second level, i.e., the low level, the first switching tube Q1 is turned off, the second switching tube Q3 is turned on, the driving signal output end Drive is connected to the power signal ground end COM and turned on, the driving signal output end Drive, the second resistor R4 and the second switching tube Q3 are turned on, and the rear-stage power semiconductor device is turned off. The first resistor R1 and the second resistor R4 are current-limiting protection resistors.
Fig. 3 is a schematic structural diagram of a driving circuit of another power semiconductor device according to an embodiment of the present invention, referring to fig. 3, the auxiliary driving turn-on module 130 includes a third switching transistor Q2 and a fourth resistor R2, and the auxiliary driving turn-off module 140 includes a fourth switching transistor Q4 and a fifth resistor R5;
the control end of the third switching tube Q2 is connected to the first output end V-QH of the logic control module, the second end of the third switching tube Q2 is connected to a power supply signal VG, the first end of the third switching tube Q2 is connected to the driving signal output end through the fourth resistor R2, the control end of the fourth switching tube Q4 is connected to the second output end V-QL of the logic control module, the second end of the fourth switching tube is grounded, and the first end of the fourth switching tube Q4 is connected to the driving signal output end through the fifth resistor R5; the third switching tube Q2 is used for conducting according to the first logic control signal; and the fourth switching tube Q4 is used for conducting according to the second logic control signal.
Specifically, the third switching tube Q2 and the fourth switching tube Q4 can be turned on and off according to a logic control signal, for example, the third switching tube Q2 is an NPN type triode, the fourth switching tube Q4 is a PNP type triode, the first logic control signal is a high level signal, the second logic control signal is a low level signal, and the third switching tube Q2 and the fourth switching tube Q4 are controlled to be turned on and turned off through a high level or a low level. The working process is as follows: the logic control module 150 outputs a first logic control signal, i.e., a high level signal, according to the driving turn-on signal, so that the third transistor Q2 is turned on, the fourth transistor Q4 is turned off, and at this time, an auxiliary driving turn-on loop composed of the power signal VG, the third transistor Q2, and the fourth resistor R2 is incorporated, thereby increasing the driving turn-on signal current. The logic control module outputs a first logic control signal, i.e., a low level signal, so that the fourth switching tube Q4 is turned on, the third switching tube Q2 is turned off, and at this time, an auxiliary driving turn-off loop composed of the power signal ground COM, the fourth switching tube Q4 and the fifth resistor R5 is incorporated, thereby increasing the driving turn-on signal current.
Based on the above embodiments, fig. 4 is a schematic structural diagram of a logic control module according to an embodiment of the present invention, and referring to fig. 4, the logic control module includes a comparing unit and a signal processing unit;
a first input end of the comparing unit 410 is connected to the driving signal output end Drive, a second input end of the comparing unit 410 is connected to the first reference signal output end VTH, and a third input end of the comparing unit 410 is connected to the second reference signal output end VP; the comparing unit 410 is configured to output a first signal when the driving-on signal is smaller than the first reference signal or the driving-on signal is greater than the second reference signal, and output a second signal when the driving-off signal is smaller than the first reference signal or the driving-off signal is greater than the second reference signal; a first input end of the signal processing unit 420 is connected to an output end of the comparing unit 410; a second input end of the signal processing unit 420 is connected with a pulse control signal; (ii) a The signal processing unit 420 is configured to output the first logic control signal according to the first signal and the first level, and output the second logic control signal according to the second signal and the second level.
Specifically, the comparing unit 410 may preset the first reference voltage and the second reference voltage internally or respectively access the first reference voltage and the second reference voltage. For example, the first reference voltage and the second reference voltage may be respectively set to a threshold voltage value Vth of the power semiconductor device and a miller platform voltage value Vplateau of the power semiconductor device according to the power semiconductor device. The comparing unit 410 compares the relationship between the driving turn-on signal, the threshold voltage Vth and the miller plateau voltage Vplateau, and when the driving turn-on signal is smaller than the threshold voltage Vth or larger than the miller plateau voltage Vplateau, the comparing unit 410 outputs a first signal; when the driving turn-on signal is greater than the threshold voltage Vth and less than the miller plateau voltage Vplateau, the comparing unit 410 outputs a third signal; when the driving turn-off signal is smaller than the threshold voltage Vth or larger than the miller plateau voltage Vplateau, the comparing unit 410 outputs a second signal; when the driving shutdown signal is greater than the threshold voltage Vth and less than the miller plateau voltage Vplateau, the comparing unit 410 outputs a fourth signal. The first signal, the second signal, the third signal and the fourth signal may be analog signals or digital signals, which is not limited herein. The signal processing unit 420 may output a first logic control signal, a second logic control signal, a third logic control signal, and a fourth logic control signal according to the first signal, the second signal, the third signal, and the fourth signal output by the comparing unit 410, respectively. The starting process of the power semiconductor device is realized through the logic control signal, and the power semiconductor device is merged into the auxiliary driving conducting module or the auxiliary driving conducting module is switched off; and a power semiconductor device turn-off process, wherein the power semiconductor device turn-off process is combined into the auxiliary drive turn-off or turn-off auxiliary drive turn-off module, and the drive of the power semiconductor is always in an optimal state through the sectional drive control of the power semiconductor turn-on and turn-off process, so that the switching loss of the power semiconductor is reduced, and the efficiency is improved.
Fig. 5 is a schematic structural diagram of another logic control module according to an embodiment of the present invention, and referring to fig. 5, the comparing unit 410 includes a first comparator U3C, a second comparator U3D, a sixth resistor R6, a seventh resistor R7, a second comparator U3D, an eighth resistor R8, a ninth resistor R9, and a first nand gate U4; a first input terminal of the first comparator U3C is connected to the driving signal output terminal Drive through the seventh resistor R7, a second input terminal of the first comparator U3C is connected to the first reference signal output terminal VTH through the sixth resistor R6,
a first input end of the second comparator U3D is connected to the second reference signal output end VP through the ninth resistor R9, and a second input end of the second comparator U3D is connected to the driving signal output end Drive through an eighth resistor R8;
a first input end of the first NAND gate U4 is connected with an output end of the first comparator U3C; a second input end of the first nand gate U4 is connected to the output end of the second comparator U3D; the first nand gate U4 is configured to output a first signal when the driving-on signal is smaller than the first reference signal or the driving-on signal is greater than the second reference signal, and output a second signal when the driving-off signal is smaller than the first reference signal or the driving-off signal is greater than the second reference signal.
Specifically, the first signal and the second signal may be analog signals or digital signals, and are not limited herein. In this embodiment, for example, the first signal and the second signal are digital quantity signals, and according to the performance characteristics of the power semiconductor device, the first reference voltage is set to the threshold voltage Vth of the power semiconductor device, and the second reference voltage is set to the miller platform voltage Vplateau of the power semiconductor device. The positive terminal signal of the comparator is greater than the negative terminal signal and outputs a high level signal, the positive terminal signal of the comparator is less than the negative terminal signal and outputs a low level signal, illustratively, the first terminal of the first comparator U3C is the positive terminal, the second terminal of the first comparator U3C is the negative terminal, the first terminal of the second comparator U3D is the positive terminal, and the second terminal of the second comparator U3D is the negative terminal.
The working process of the comparing unit 410 is as follows: when the driving conduction signal is smaller than the threshold voltage value Vth, the first comparator U3C outputs a low level, the second comparator U3D outputs a high level, the two signals pass through the first nand gate U4 and then output a first signal, and at the moment, the first signal is a high level; when the driving turn-on signal is greater than the miller platform voltage value Vplateau, the first comparator U3C outputs a high level, the second comparator U3D outputs a low level, the two signals pass through the first nand gate U4 and then output a first signal, and at this time, the first signal is a high level.
When the driving turn-on signal is greater than the threshold voltage Vth and less than the miller plateau voltage Vplateau, the first comparator U3C outputs a high level, and the second comparator U3D outputs a high level. The two signals pass through the first nand gate U4 to output a third signal, and at this time, the third signal is at a low level.
When the driving turn-off signal is greater than the miller platform voltage value Vplateau, the first comparator U3C outputs a high level, the second comparator U3D outputs a low level, the two signals pass through the first nand gate U4 and then output a second signal, and at this time, the second signal is a high level. When the driving shutdown signal is smaller than the threshold voltage Vth, the first comparator U3C outputs a high level, and the second comparator U3D outputs a low level. The two signals pass through the first nand gate U4 to output a second signal, which is at a high level.
When the driving off signal is greater than the threshold voltage Vth and less than the miller plateau voltage Vplateau, the first comparator U3C outputs a high level, and the second comparator U3D outputs a high level. The two signals pass through the first nand gate U4 to output a fourth signal, and at this time, the fourth signal is at a low level.
Based on the above embodiments, fig. 6 is a schematic structural diagram of another logic control module according to an embodiment of the present invention, and referring to fig. 6 in combination with fig. 3, the signal processing unit includes an and gate U2, a second nand gate U5, an inverter U6, a tenth resistor R10, and an eleventh resistor R11;
the first end of the AND gate U2 is connected with a pulse control signal; the second end of the and gate U2 is connected to the output end of the comparing unit 410; the output end of the AND gate U2 is connected with the first output end V-QH of the logic control module through the tenth resistor R10; the and gate U2 is used for outputting a first logic control signal when the comparison unit 410 outputs the first signal;
the input end of the inverter U6 is connected with a pulse control signal; a second input end of the second NAND gate U5 is connected to the output end of the inverter U6, and a first input end of the second NAND gate U5 is connected to the output end of the comparison unit 410; the second NAND gate U5 is connected to the second output end V-QL of the logic control module through the eleventh resistor R11; the nand gate U5 is used for outputting a second logic control signal when the comparison unit 410 outputs the second signal.
Specifically, when the pulse control signal output terminal OUT outputs the pulse control signal at a first level, the exemplary first level is a high level. At this time, when the driving turn-on signal is smaller than the threshold voltage Vth or larger than the miller plateau voltage vplate, the comparing unit 410 outputs the first signal, i.e., high level, the and gate U2 outputs high level, and the second nand gate U5 outputs high level. At this time, the high level output by the and gate U2 and the high level output by the second nand gate U5 constitute the first logic control signal.
When the driving turn-on signal is greater than the threshold voltage Vth and less than the miller plateau voltage vplate, the comparing unit 410 outputs a third signal, i.e., a low level, the and gate U2 outputs a low level, and the second nand gate U5 outputs a high level. At this time, the low level output by the and gate U2 and the high level output by the second nand gate U5 constitute a third logic control signal.
When the pulse control signal output terminal OUT outputs the pulse control signal at the second level, the exemplary second level is a low level. At this time, when the driving shutdown signal is smaller than the threshold voltage Vth or larger than the miller plateau voltage Vplateau, the comparing unit 410 outputs the second signal, i.e., high level, the and gate U2 outputs low level, and the second nand gate U5 outputs low level. At this time, the low level output by the and gate U2 and the low level output by the second nand gate U5 constitute a second logic control signal.
When the driving shutdown signal is greater than the threshold voltage Vth and less than the miller plateau voltage vplate, the comparing unit 410 outputs a fourth signal, i.e., a low level, the and gate U2 outputs a low level, and the second nand gate U5 outputs a low level. At this time, the low level output by the and gate U2 and the high level output by the second nand gate U5 constitute a fourth logic control signal.
Fig. 7 is a schematic structural diagram of a driving circuit of another power semiconductor device according to an embodiment of the present invention, referring to fig. 7, the driving circuit of the power semiconductor device further includes a strong and weak electrical signal isolation and level conversion module U1, a control end of the main driving turn-on module 110 and a control end of the main driving turn-off module 120 are connected to an output end of the strong and weak electrical signal isolation and level conversion module U1, and the strong and weak electrical signal isolation and level conversion module U1 is configured to provide the pulse control signal.
Specifically, a first pin ANODE of the strong and weak electrical signal isolation and level conversion module U1 is connected to a weak side pulse modulation signal input terminal IN, i.e., a pulse modulation signal, a second pin NC of the strong and weak electrical signal isolation and level conversion module U1 is suspended, a third pin cathodode of the strong and weak electrical signal isolation and level conversion module U1 is connected to a weak side power ground GND, a fourth pin VEE of the strong and weak electrical signal isolation and level conversion module U1 is connected to a power signal ground COM, a fifth pin VOUT of the strong and weak electrical signal isolation and level conversion module U1 outputs a converted pulse control signal, the pulse control signal is connected to the main drive turn-on module 110 and the main drive turn-off module 120, and a sixth pin VCC of the strong and weak electrical signal isolation and level conversion module U1 is connected to a power signal VG which supplies power through a power supply VG signal. The strong and weak electric signal isolation and level conversion module converts the weak point side pulse modulation signal into a pulse control signal at the power supply signal side, and isolates the weak current side and the power supply signal side signal to avoid interference between signals.
With continued reference to fig. 7, the driving circuit of the power semiconductor device further includes a current limiting resistor R3, and the output terminal of the strong and weak electrical signal isolation and level conversion module U1 is connected to the control terminal of the main driving turn-on module 110 and the control terminal of the main driving turn-off module 120 through the current limiting resistor R3; the current limiting resistor R3 is used for current limiting protection of a rear-stage circuit. Specifically, the current-limiting resistor R3 is connected in series with the signal input end, so that the current-limiting protection of the rear-stage circuit is realized, and the protection of the rear-stage circuit is improved.
The embodiment of the invention also provides a power semiconductor device, which comprises the driving circuit of the power semiconductor device, wherein the output end of the driving circuit is electrically connected with the control end of the power semiconductor device.
Specifically, the control terminal of the power semiconductor is connected to the output terminal of the driving circuit, and is controlled and driven by the driving circuit provided by the embodiment of the invention. The power semiconductor device provided by the embodiment of the invention and the driving circuit provided by any embodiment of the invention belong to the same inventive concept, and have corresponding beneficial effects, and detailed technical details which are not detailed in the embodiment are shown in the driving circuit of the power semiconductor provided by any embodiment of the invention.
Finally, it should be noted that: the above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (10)
1. A drive circuit of a power semiconductor device, comprising: the device comprises a driving signal output end, a main driving conduction module, a main driving turn-off module, an auxiliary driving conduction module, an auxiliary driving turn-off module and a logic control module;
a control end of the main drive switch-on module and a control end of the main drive switch-off module are connected and then connected with a pulse control signal, wherein the pulse control signal comprises a first level and a second level, and the polarity of the first level is opposite to that of the second level; the output end of the main drive switch-on module is connected with the output end of the main drive switch-off module and then connected with the drive signal output end; the main driving conducting module is used for outputting a driving conducting signal according to the first level; the main driving turn-off module is used for outputting a driving turn-off signal according to the second level;
the output end of the auxiliary driving conduction module is connected with the output end of the main driving conduction module; the control end of the auxiliary drive conduction module is connected with the first output end of the logic control module; the output end of the auxiliary drive turn-off module is connected with the output end of the main drive turn-off module; the control end of the auxiliary drive turn-off module is connected with the second output end of the logic control module;
the first input end of the logic control module is connected with the driving signal output end, and the logic control module is used for outputting a first logic control signal through the first logic control end according to the driving conduction signal; the auxiliary driving conducting module is used for increasing the current of the driving conducting signal in an auxiliary mode according to the first logic control signal; the logic control module is used for outputting a second logic control signal through the second logic control end according to the driving conduction signal; the auxiliary driving turn-off module is used for increasing the current of the driving turn-off signal in an auxiliary mode according to the second logic control signal.
2. The drive circuit of a power semiconductor device according to claim 1,
the logic control module is further used for outputting the first logic control signal when the driving conducting signal is smaller than a first reference signal or the driving conducting signal is larger than a second reference signal;
outputting the third logic control signal when the driving turn-on signal is greater than the first reference signal and less than the second reference signal;
outputting the second logic control signal when the driving turn-off signal is smaller than the first reference signal or the driving turn-off signal is greater than the second reference signal;
when the driving turn-off signal is greater than the first reference signal and less than the second reference signal, outputting the fourth logic control signal; wherein the first reference signal comprises a threshold voltage value of the power semiconductor device; the second reference signal comprises a miller platform voltage value of the power semiconductor device.
3. The driving circuit of the power semiconductor device according to claim 1, wherein the main driving turn-on module comprises a first switch tube and a first resistor, and the main driving turn-off module comprises a second switch tube and a second resistor;
the control end of the first switch tube is connected with the control end of the second switch tube and then is connected with the pulse control signal; the second end of the first switch tube is connected with a power supply signal, and the first end of the first switch tube is connected with the output end of the main driving module through the first resistor; the first end of the second switch tube is connected with the output end of the main driving module through the second resistor, and the second end of the second switch tube is grounded; the first switch tube is used for conducting when the pulse control signal is at a first level; the second switch tube is used for conducting when the pulse control signal is at a second level.
4. The driving circuit of the power semiconductor device according to claim 1, wherein the auxiliary driving turn-on module comprises a third switching tube and a fourth resistor, and the auxiliary driving turn-off module comprises a fourth switching tube and a fifth resistor;
the control end of the third switch tube is connected with the first output end of the logic control module, the second end of the third switch tube is connected with a power supply signal, the first end of the third switch tube is connected with the driving signal output end through a fourth resistor, the control end of the fourth switch tube is connected with the second output end of the logic control module, the second end of the fourth switch tube is grounded, and the first end of the fourth switch tube is connected with the driving signal output end through a fifth resistor; the third switching tube is used for conducting according to the first logic control signal; and the fourth switching tube is used for conducting according to the second logic control signal.
5. The drive circuit of the power semiconductor device according to claim 1, wherein the logic control module comprises a comparison unit and a signal processing unit;
the first input end of the comparison unit is connected with the drive signal output end, the second input end of the comparison unit is connected with the first reference signal output end, and the third input end of the comparison unit is connected with the second reference signal output end; the comparison unit is used for outputting a first signal when the driving on signal is smaller than the first reference signal or the driving on signal is larger than the second reference signal, and outputting a second signal when the driving off signal is smaller than the first reference signal or the driving off signal is larger than the second reference signal; the first input end of the signal processing unit is connected with the output end of the comparison unit; a second input end of the signal processing unit is connected with a pulse control signal; (ii) a The signal processing unit is used for outputting the first logic control signal according to the first signal and the first level and outputting the second logic control signal according to the second signal and the second level.
6. The power semiconductor device driving circuit according to claim 5, wherein the comparing unit comprises a first comparator, a second comparator, a sixth resistor, a seventh resistor, a second comparator, an eighth resistor, a ninth resistor and a first NAND gate; the first input end of the first comparator is connected with the driving signal output end through the seventh resistor, and the second input end of the first comparator is connected with the first reference signal output end through the sixth resistor;
the first input end of the second comparator is connected with the second reference signal output end through the ninth resistor, and the second input end of the second comparator is connected with the driving signal output end through the eighth resistor;
the first input end of the first NAND gate is connected with the output end of the first comparator; the second input end of the first NAND gate is connected with the output end of the second comparator; the first nand gate is configured to output a first signal when the driving turn-on signal is smaller than the first reference signal or the driving turn-on signal is larger than the second reference signal, and output a second signal when the driving turn-off signal is smaller than the first reference signal or the driving turn-off signal is larger than the second reference signal.
7. The driving circuit of the power semiconductor device according to claim 5, wherein the signal processing unit comprises an AND gate, a second NAND gate, an inverter, a tenth resistor and an eleventh resistor;
the first end of the AND gate is connected with a pulse control signal; the second end of the AND gate is connected with the output end of the comparison unit; the output end of the AND gate is connected with the first output end of the logic control module through the tenth resistor; the AND gate is used for outputting a first logic control signal when the comparison unit outputs the first signal;
the input end of the phase inverter is connected with a pulse control signal; the second input end of the second NAND gate is connected with the output end of the phase inverter, and the first input end of the second NAND gate is connected with the output end of the comparison unit; the second NAND gate is connected with the second output end of the logic control module through the eleventh resistor; the nand gate is used for outputting a second logic control signal when the comparison unit outputs the second signal.
8. The power semiconductor device driving circuit according to claim 1, further comprising a strong and weak electrical signal isolation and level conversion module, wherein a control terminal of the main driving turn-on module and a control terminal of the main driving turn-off module are connected and then connected to an output terminal of the strong and weak electrical signal isolation and level conversion module, and the strong and weak electrical signal isolation and level conversion module is configured to provide the pulse control signal.
9. The power semiconductor device driving circuit according to claim 8, further comprising a current limiting resistor, wherein the output terminal of the strong and weak electrical signal isolation and level conversion module is connected to the control terminal of the main driving turn-on module and the control terminal of the main driving turn-off module through the current limiting resistor; the current-limiting resistor is used for current-limiting protection of a post-stage circuit.
10. A power semiconductor device, characterized in that it comprises a driver circuit of a power semiconductor device according to claims 1-9, the output of which driver circuit is electrically connected to the control terminal of the power semiconductor device.
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| CN202110996026.6A CN113726319A (en) | 2021-08-27 | 2021-08-27 | Power semiconductor drive circuit and power semiconductor device |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101976939A (en) * | 2010-09-30 | 2011-02-16 | 安徽工业大学 | MOSFET driving chip of current source |
| CN103560655A (en) * | 2013-09-27 | 2014-02-05 | 株洲变流技术国家工程研究中心有限公司 | Driver and system thereof based on parallel connection of multiple power semiconductor devices |
| CN104518699A (en) * | 2013-09-30 | 2015-04-15 | 艾默生网络能源有限公司 | Current limit control method, current limit control device and current limit control system of three-level inverter |
| CN105632438A (en) * | 2016-01-08 | 2016-06-01 | 京东方科技集团股份有限公司 | Level offset unit, level offset circuit and drive method, and grid drive circuit |
-
2021
- 2021-08-27 CN CN202110996026.6A patent/CN113726319A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101976939A (en) * | 2010-09-30 | 2011-02-16 | 安徽工业大学 | MOSFET driving chip of current source |
| CN103560655A (en) * | 2013-09-27 | 2014-02-05 | 株洲变流技术国家工程研究中心有限公司 | Driver and system thereof based on parallel connection of multiple power semiconductor devices |
| CN104518699A (en) * | 2013-09-30 | 2015-04-15 | 艾默生网络能源有限公司 | Current limit control method, current limit control device and current limit control system of three-level inverter |
| CN105632438A (en) * | 2016-01-08 | 2016-06-01 | 京东方科技集团股份有限公司 | Level offset unit, level offset circuit and drive method, and grid drive circuit |
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