CN113725054A - Segmented sine waveguide slow wave structure - Google Patents
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- CN113725054A CN113725054A CN202111073730.0A CN202111073730A CN113725054A CN 113725054 A CN113725054 A CN 113725054A CN 202111073730 A CN202111073730 A CN 202111073730A CN 113725054 A CN113725054 A CN 113725054A
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Abstract
The invention discloses a segmented sine waveguide slow wave structure which comprises an upper segmented sine waveguide and a lower segmented sine waveguide which are respectively arranged at the upper side and the lower side, wherein the upper segmented sine waveguide and the lower segmented sine waveguide respectively comprise a plurality of sequentially connected segmented sine waveguides, each segmented sine waveguide consists of a sine waveguide with a complete period and two flat waveguides, the two flat waveguides are respectively arranged at the crest point and the trough concave point of the sine waveguide, and the two ends of each flat waveguide are respectively tangent to the sine waveguides at the two sides of the flat waveguides. The segmented sine waveguide slow wave structure has the advantages of lower normalized phase speed, flatter dispersion curve and higher coupling impedance, which shows that the traveling wave tube based on the segmented sine waveguide has the physical performance advantages of lower synchronous voltage, wider synchronous bandwidth, higher output power, higher interaction efficiency and the like.
Description
Technical Field
The invention belongs to the technical field of vacuum electronics, and particularly relates to a segmented sine waveguide slow wave structure.
Background
Compared with a solid-state power amplifier, the terahertz traveling wave tube based on the vacuum electronics principle has the characteristics of high power, wide frequency band, compact structure and the like without substitutability, can meet the application requirements of high power, wide frequency band and the like in the terahertz electromagnetic system at present, is a high-power source with very high application value, and has important application value in the fields of high-speed wireless communication, high-resolution imaging radar, space science detection, biomedical detection and the like. The slow wave structure is a core component in the terahertz traveling wave tube and plays a decisive role in the performance of the device. At the present stage, due to the traction of the requirements of various application fields on a high-power terahertz radiation source, development requirements such as higher coupling impedance, more excellent electromagnetic transmission performance and wider working frequency band are provided for a terahertz slow wave structure.
At present, slow wave structures mainly applied to terahertz traveling wave tubes include a folded waveguide structure, a rectangular staggered double-gate structure, a double-row rectangular gate structure and a sinusoidal waveguide structure. The coupling impedance of the folded waveguide structure is moderate, the working bandwidth is relatively wide, but the transmission loss of the folded waveguide structure in a terahertz frequency band is large, and the processing of an electron beam channel is difficult; the rectangular staggered double-gate waveguide has high coupling impedance and wide working bandwidth, but has strong reflection and large transmission loss due to more impedance discontinuities; the double-row rectangular gate waveguide is easy to process, but has the disadvantages of low coupling impedance, large transmission loss and the like.
The invention discloses a Chinese patent of a wavy waveguide slow wave structure, which is disclosed in 5/11/2011, and particularly discloses a wavy waveguide slow wave structure formed by deforming a conventional rectangular waveguide with a wide side dimension of a and a narrow side dimension of b; the E surface of the wavy waveguide slow wave structure is in a periodic wave wavy shape, the H surface of the wavy waveguide slow wave structure is a plane, and the crossed contour line of the E surface and the H surface is a periodically-changed wavy line; the period length of the periodically changed wavy line is p, and the fluctuation height h is the difference between the size b of the narrow side of the rectangular waveguide and the height hb of the electron beam channel. Although the undulated waveguide slow wave structure has the advantages of small transmission loss, weak reflection, wide working bandwidth and the like, the coupling impedance of the sine waveguide slow wave structure is low due to weak longitudinal electric field of the sine waveguide, and the defects of small output power, low interaction efficiency, low output gain and the like of the sine waveguide traveling wave tube are directly caused; meanwhile, the spacing width at the bottom of the sinusoidal waveguide metal diaphragm is usually narrow, which brings certain difficulty to the processing of the terahertz frequency band.
A Chinese invention patent disclosed in 2016, 8, 17 is a flat-top sine waveguide slow wave structure, and specifically discloses that on the basis of a sine waveguide slow wave structure, the dimension b of a narrow edge is properly compressed, and the compressed dimension is equal to the height of the truncated top of the periodic strip fluctuation of an upper sine line and a lower sine line, so that the dimension parameters meet the following requirements: b < hb +2h, where hb is the height of the ribbon electron beam channel and h is the height of the sinusoidal line periodic ribbon undulations. The structure is formed by eliminating the flat top after compressing the distance between the electron beam channels, and the longitudinal electric field distribution at the electron beam channels is improved, so that the coupling impedance is improved. However, because the flat-top sine waveguide is truncated after the electron channel is compressed, the continuity of the sine waveguide in the electromagnetic wave transmission direction is destroyed, and impedance discontinuity points are introduced at the electron beam channel, which causes the radio frequency transmission characteristic of the slow wave structure to be deteriorated to a certain extent; meanwhile, the interval width at the bottom of the flat-top sinusoidal waveguide metal diaphragm is narrow, which brings certain difficulty to the processing of the terahertz frequency band.
The invention is provided to solve the above problems.
Disclosure of Invention
In order to solve the above problems, a segmented sine waveguide slow wave structure is proposed. In order to achieve the purpose, the invention provides the following technical scheme:
the utility model provides a segmentation sinusoidal waveguide slow wave structure, includes that the last segmentation sinusoidal waveguide of upper and lower both sides is arranged in separately and segments sinusoidal waveguide down, go up segmentation sinusoidal waveguide and segment sinusoidal waveguide down and all include a plurality of segmentation sinusoidal waveguides that connect gradually, every segmentation sinusoidal waveguide comprises a complete periodic sinusoidal waveguide and two slab waveguides, and two slab waveguides set up respectively in sinusoidal waveguide's crest summit and trough concave point department, and slab waveguide's both ends are tangent with the sinusoidal waveguide of slab waveguide both sides respectively.
Preferably, the period length of the segmented sinusoidal waveguide is P, the undulation height of the sinusoidal waveguide of the upper segmented sinusoidal waveguide is h1, the period length is P1, the lengths of the two flat guided waves in the electron beam transmission direction are w1 and w2, respectively, the undulation height of the sinusoidal waveguide of the lower segmented sinusoidal waveguide is h2, the period length is P2, the lengths of the two flat guided waves in the electron beam transmission direction are w3 and w4, respectively, the space formed between the upper segmented sinusoidal waveguide and the lower segmented sinusoidal waveguide is an electron beam channel, and the height of the electron beam channel is hb, where h1 is h2, P1 is P2, w1 is greater than 0, w2 is greater than 0, w3 is greater than 0, w4 is greater than 0, P1+ w1+ w2 is P, and P2+ 3+ w4 is P.
Preferably, w1 ═ w3 and w2 ═ w 4.
Preferably, w1 ═ w2 ═ w3 ═ w 4.
Preferably, the upper segmented sine waveguide and the lower segmented sine waveguide synchronously fluctuate.
Preferably, for a slow-wave structure of a 220GHz terahertz traveling wave tube, the widths of the upper segmented sinusoidal waveguide and the lower segmented sinusoidal waveguide in the direction perpendicular to the electron beam transmission direction are 770 μm, P is 460 μm, P1 is 300 μm, P2 is 300 μm, h1 is h2 is 180 μm, w1 is w2 is w3 is w4 is 80 μm, and hb is 140 μm.
Has the advantages that:
compared with the conventional sine waveguide (a wavy waveguide slow wave structure) and a flat-top sine waveguide slow wave structure, the segmented sine waveguide slow wave structure provided by the invention has the advantages of lower normalized phase speed, flatter dispersion curve and higher coupling impedance, which shows that a traveling wave tube based on the segmented sine waveguide has the physical performance advantages of lower synchronous voltage, wider synchronous bandwidth, higher output power, higher interaction efficiency and the like.
Drawings
FIG. 1 is a schematic structural diagram of a segmented sinusoidal waveguide slow wave structure according to the present invention.
Fig. 2 is a dimension labeling diagram of a single-period segmented sinusoidal waveguide.
FIG. 3 is a graph comparing normalized phase velocity of a segmented sinusoidal waveguide with a conventional sinusoidal waveguide and a flat-top sinusoidal waveguide.
FIG. 4 is a graph comparing coupling impedance of a segmented sinusoidal waveguide with a conventional sinusoidal waveguide and a flat-top sinusoidal waveguide.
Fig. 5 is a diagram showing the result of simulation calculation of the transmission parameters of the segmented sinusoidal waveguide.
In the figure: 1. an upper segmented sinusoidal waveguide; 2. a lower segmented sinusoidal waveguide.
Detailed Description
In order to make the technical solutions of the present invention better understood, the following description of the technical solutions of the present invention with reference to the accompanying drawings of the present invention is made clearly and completely, and other similar embodiments obtained by a person of ordinary skill in the art without any creative effort based on the embodiments in the present application shall fall within the protection scope of the present application. In addition, directional terms such as "upper", "lower", "left", "right", etc. in the following embodiments are directions with reference to the drawings only, and thus, the directional terms are used for illustrating the present invention and not for limiting the present invention.
Example 1
The traveling wave tube mainly comprises a slow wave structure (slow wave line), an electron gun, a magnetic focusing system, a high-frequency input and output structure and a collection stage. In the working process of the traveling wave tube, an electron gun generates an electron beam with a certain shape and current intensity, and the electron beam is accelerated to a certain speed to be convenient for energy exchange with an electromagnetic field in a slow wave structure; the magnetic focusing system utilizes magnetic field force to counteract space charge repulsion force existing in the electron beam and restrains the electron beam so that the electron beam can smoothly pass through the whole slow wave structure without being intercepted; the slow wave structure is mainly used for transmitting high-frequency electromagnetic waves and reducing the phase speed of the electromagnetic waves to a synchronous speed, and is a place for realizing injection-wave interaction, namely an electromagnetic field is used for modulating an electron beam, and the modulated electron beam is delivered out of a mechanism for amplifying a high-frequency electromagnetic field by direct current energy; the high-frequency input and output structure is mainly used for coupling high-frequency input signal energy into the slow wave structure and coupling the amplified high-frequency signal energy onto an output loop; the collecting stage is used for collecting electrons which have been converted with the electromagnetic field, and the electrons are converted into heat energy to be dissipated when striking the collecting stage.
As shown in fig. 1 and 2, to solve the above technical problem, the present embodiment provides a segmented sine waveguide slow wave structure, where the segmented sine waveguide slow wave structure includes an upper segmented sine waveguide 1 and a lower segmented sine waveguide 2 disposed on upper and lower sides, the upper segmented sine waveguide 1 and the lower segmented sine waveguide 2 both include a plurality of sequentially connected segmented sine waveguides, each segmented sine waveguide is composed of a complete cycle of sine waveguides and two slab waveguides, the two slab waveguides are disposed at a peak vertex and a valley vertex of the sine waveguide, and two ends of the slab waveguide are tangent to the sine waveguides on two sides of the slab waveguide, so that smoothness of the slab waveguide and the sine waveguides on two sides of the slab waveguide at a connection point is ensured, and no impedance discontinuity point is introduced.
As shown in fig. 2, the period length of the segmented sinusoidal waveguide is P, the undulation height of the sinusoidal waveguide of the upper segmented sinusoidal waveguide 1 is h1, the period length is P1, the lengths of the two plate guided waves in the electron beam transmission direction are w1 and w2, respectively, the undulation height of the sinusoidal waveguide of the lower segmented sinusoidal waveguide 2 is h2, the period length is P2, the lengths of the two plate guided waves in the electron beam transmission direction are w3 and w4, respectively, the space formed between the upper segmented sinusoidal waveguide and the lower segmented sinusoidal waveguide is an electron beam channel, and the height of the electron beam channel is hb, where h1 is h 378, P1 is P2, w1 is > 0, w2 is > 0, w 84 is > 0, w4 is > 0, P1+ w1+ w2 is P, and P5 + w3+ 4 is P.
Further, in order to further improve the transmission performance, the upper segmented sine waveguide 1 and the lower segmented sine waveguide 2 are synchronously fluctuated, wherein w1 is w3, and w2 is w 4.
Example 2
The slow wave structure is a core component in the terahertz traveling wave tube, and for the terahertz traveling wave tube, the dispersion characteristic, the coupling impedance and the radio frequency transmission characteristic of the terahertz slow wave structure play a decisive role in the physical performance of the device. The dispersion characteristic is an important parameter of a slow wave structure and is related to a series of important indexes such as working voltage, frequency bandwidth and working frequency of the traveling wave tube; the coupling impedance represents the effective degree of interaction between the slow wave structure and the electron beam, is another important parameter of the slow wave structure, generally depends on parameters such as longitudinal electric field intensity, transmission power flow and the like in the slow wave structure, and is related to a series of important indexes such as output power, interaction efficiency, output gain and the like of the traveling wave tube; in the terahertz frequency band, along with the improvement of working frequency, the actual processing difficulty and the radio frequency transmission loss of the slow wave structure are increased rapidly, and the reflection and loss characteristics (radio frequency transmission characteristics) of the slow wave structure also influence the device working index of the traveling wave tube to a great extent.
The conventional sine waveguide (a wavy waveguide slow wave structure disclosed in Chinese invention patent 5/11/2011) has low reflection coefficient and transmission loss because it has no resistance mutation point and good longitudinal uniformity. However, it was found that the coupling resistance was low and the gap width at the bottom of the metal diaphragm was narrow. In order to improve the coupling impedance of the conventional sine waveguide, a flat-top sine waveguide slow-wave structure (a flat-top sine waveguide slow-wave structure disclosed in Chinese patent of 2016, 8, 17) is formed by eliminating the flat top after compressing the distance between electron beam channels, so that the longitudinal electric field distribution at the electron beam channels is improved, and the coupling impedance is further improved. However, the despun structure may destroy the continuity of the sinusoidal waveguide in the electromagnetic wave transmission direction, and introduce an impedance discontinuity at the electron beam channel, which may deteriorate the radio frequency transmission characteristics of the slow wave structure.
In this embodiment, a slow-wave structure of a 220GHz terahertz traveling-wave tube is taken as an example, the length of a wide side is 770 μm, the length P of a single period is 460 μm, the length P1 of an upper segment sine waveguide is 300 μm, the length P2 of a lower segment sine waveguide is 300 μm, the height h1 of the upper segment sine waveguide is 180 μm, the height h2 of the lower segment sine waveguide is 180 μm, the lengths of four segments of flat waveguides along an electron beam transmission direction are w1, w2, w3, w4 and electron beam channel height hb of 140 μm.
The dispersion characteristic curve and the coupling impedance characteristic curve of the segmented sinusoidal waveguide can be obtained by carrying out intrinsic calculation through electromagnetic simulation software. Meanwhile, a conventional sine waveguide (a wavy waveguide slow wave structure disclosed in Chinese invention patent on 5/11/2011) and a flat-top sine waveguide (a flat-top sine waveguide slow wave structure disclosed in Chinese invention patent on 8/17/2016) with the same width edge length, the same period length, the same fluctuation height and the same electron beam channel height are selected for simulation calculation, and the dispersion characteristics and the coupling impedance characteristics of the scheme of the embodiment and the conventional sine waveguide and the flat-top sine waveguide are compared.
The comparison result of the normalized phase velocity of the segmented sinusoidal waveguide with the conventional sinusoidal waveguide and the flat-top sinusoidal waveguide is shown in fig. 3, and it is obvious from fig. 3 that, under the condition of the same size structure, the scheme of the present embodiment has a lower normalized phase velocity and a flatter dispersion curve than the conventional sinusoidal waveguide and the flat-top sinusoidal waveguide, which indicates that the traveling wave tube based on the slow wave structure of the scheme of the present embodiment will have a lower synchronization voltage and a wider synchronization bandwidth.
The comparison result of the coupling impedance of the segmented sinusoidal waveguide with the conventional sinusoidal waveguide and the flat-top sinusoidal waveguide is shown in fig. 4, and it can be known from fig. 4 that the coupling impedance of the slow-wave structure of the embodiment in the operating frequency band is significantly higher than that of the conventional sinusoidal waveguide, and the coupling impedance at a typical frequency of 220GHz is higher than that of the conventional sinusoidal waveguide by about 50% and 13.3% respectively. This indicates that the traveling wave tube based on the slow wave structure of the invention has larger output power, higher interaction efficiency and output gain.
By using the structural parameters of the segmented sine waveguide slow wave structure, 30 main periods (segmented sine waveguides) and 6 linear gradual transition periods (the transition periods have the same length as the segmented sine waveguide period and the fluctuation height h is linearly increased and changed) are selected, and the effective conductivity is set to be 2.0 multiplied by 107And (5) S/m. A transmission characteristic calculation model is established in electromagnetic simulation software, a simulation calculation result of the segmented sinusoidal waveguide transmission parameters can be obtained by solving through time domain simulation in the software, the result is shown in figure 5, the reflection parameters of the segmented sinusoidal waveguide slow-wave structure are less than-22.5 dB in the working frequency band range of 200 plus one GHz, and the transmission parameters are transmitted within the range of-22.5 dB in the working frequency band range of 200 plus one GHzThe parameter is more than-3.93 dB, and the corresponding transmission loss is less than 1.23dB/cm, which shows that the segmented sinusoidal waveguide slow-wave structure in the scheme of the invention has good radio-frequency transmission performance.
Further, the flat-top sine waveguide is similar to a conventional sine waveguide, and has the disadvantage that the interval width at the bottom of the metal diaphragm (namely, at the peak top of the upper-segment sine waveguide and at the valley concave of the lower-segment sine waveguide) is narrow, which brings certain difficulty to the processing of the terahertz frequency band. The utility model provides a segmentation sinusoidal waveguide slow wave structure sets up the width that increases the metal diaphragm bottom through the crest peak department at last segmentation sinusoidal waveguide and the trough concave point department of segmentation sinusoidal waveguide down with the tangent slab waveguide realization of sinusoidal waveguide, and segmentation sinusoidal waveguide's metal diaphragm bottom is greater than the width of conventional sinusoidal waveguide, flat-top sinusoidal waveguide's metal diaphragm bottom, more is favorable to micro-machining's cutter to pass through, reduces the degree of difficulty of terahertz frequency channel processing now.
Example 3
The specific embodiment further provides another segmented sine waveguide slow wave structure, the broadside length of the segmented sine waveguide slow wave structure is 770 μm, the single period length P is 460 μm, the period length P1 of the upper segmented sine waveguide is 300 μm, the period length P2 of the lower segmented sine waveguide is 300 μm, the undulation height h1 of the upper segmented sine waveguide is 215 μm, the undulation height h2 of the lower segmented sine waveguide is 215 μm, the lengths of the four segments of flat waveguides are w1, w2, w3, w4 and electron injection channel height hb is 140 μm.
Example 4
The specific embodiment further provides another segmented sine waveguide slow-wave structure, the broadside length of the segmented sine waveguide slow-wave structure is 770 μm, the single period length P is 460 μm, the period length P1 of the upper segmented sine waveguide is 230 μm, the period length P2 of the lower segmented sine waveguide is 230 μm, the undulation height h1 of the upper segmented sine waveguide is 180 μm, the undulation height h2 of the lower segmented sine waveguide is 180 μm, the lengths of the four segments of slab waveguides are w1, w3, 150 μm, w2, w4, and the electron injection channel height hb is 140 μm.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Furthermore, it should be understood that although the present description refers to embodiments, not every embodiment may contain only a single embodiment, and such description is for clarity only, and those skilled in the art should integrate the description, and the embodiments may be combined as appropriate to form other embodiments understood by those skilled in the art.
Claims (6)
1. The utility model provides a segmentation sinusoidal waveguide slow wave structure, its characterized in that, includes upper segment sinusoidal waveguide and lower segmentation sinusoidal waveguide of arranging in upper and lower both sides in the branch, upper segment sinusoidal waveguide and lower segmentation sinusoidal waveguide all include a plurality of segmentation sinusoidal waveguides that connect gradually, and every segmentation sinusoidal waveguide comprises sinusoidal waveguide and two slab waveguides of a complete cycle, and two slab waveguides set up respectively in sinusoidal waveguide's crest summit and trough concave point department, and slab waveguide's both ends are tangent with the sinusoidal waveguide of slab waveguide both sides respectively.
2. The segmented sinusoidal waveguide slow wave structure according to claim 1, wherein a period length of the segmented sinusoidal waveguide is P, an undulation height of the sinusoidal waveguide of the upper segmented sinusoidal waveguide is h1, the period length is P1, lengths of the two slab guided waves in the electron beam transmission direction are w1 and w2, respectively, an undulation height of the sinusoidal waveguide of the lower segmented sinusoidal waveguide is h2, the period length is P2, lengths of the two slab guided waves in the electron beam transmission direction are w 8 and w4, respectively, a space formed between the upper segmented sinusoidal waveguide and the lower segmented sinusoidal waveguide is an electron beam channel, a height of the electron beam channel is hb, wherein h1 h2, P1P 2, w1 > 0, w2 > 0, w3 > 0, w4 > 0, P1+ 1+ w 2+ P, and P5 + w3+ P57324 + w.
3. The segmented sine waveguide slow wave structure of claim 2, wherein w 1-w 3 and w 2-w 4.
4. The segmented sine waveguide slow wave structure of claim 2, wherein w1 w2 w3 w 4.
5. The segmented sine waveguide slow wave structure of claim 2, wherein the upper and lower segmented sine waveguides undulate synchronously.
6. The segmented sine waveguide slow wave structure according to claim 2, wherein for a slow wave structure of a 220GHz terahertz traveling wave tube, the widths of the upper and lower segmented sine waveguides in the direction perpendicular to the electron beam transmission direction are 770 μm, P-460 μm, P1-300 μm, P2-300 μm, h 1-h 2-180 μm, w 1-w 2-w 3-w 4-80 μm, and hb-140 μm.
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| CN114256040A (en) * | 2021-12-23 | 2022-03-29 | 电子科技大学 | Novel traveling wave tube slow wave structure |
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| CN114256040A (en) * | 2021-12-23 | 2022-03-29 | 电子科技大学 | Novel traveling wave tube slow wave structure |
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