CN113721324A - Light adjustable and wavelength division multiplexing integrated structure - Google Patents
Light adjustable and wavelength division multiplexing integrated structure Download PDFInfo
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- G02B6/24—Coupling light guides
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- G02B6/28—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
- G02B6/293—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means
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Abstract
The application discloses light is adjustable and wavelength division multiplexing integrated structure, and this structure includes: the integrated structure of optical modulation and wavelength division multiplexing is processed by an SOI wafer, the SOI wafer comprises substrate silicon, a buried oxide layer and a device layer, wherein the following structure is processed on the device layer: the etched diffraction grating is used for diffracting the light and outputting the light, wherein the light with different wavelengths after the etched diffraction grating obtains different phase delays in the slab waveguide and is focused at different output waveguide positions; the adjustable optical attenuation structure is used for adjusting the light from the etched diffraction grating; and the thermal isolation groove is arranged between the etched diffraction grating and the adjustable optical attenuation structure and is used for thermally isolating the etched diffraction grating from the adjustable optical attenuation structure. The method and the device solve the problems of optical wavelength division multiplexing in the prior art, thereby realizing the combination of light with continuously adjustable optical power and different wavelengths on the same substrate material.
Description
Technical Field
The application relates to the field of optical chips, in particular to an integrated structure of optical modulation and wavelength division multiplexing.
Background
Fig. 1 is a schematic diagram of a DWDM solution according to the prior art, such as VMUX in a dashed box of fig. 1, and as shown in fig. 1, a Dense Wavelength Division Multiplexing (DWDM) technique is to use multiple wavelengths as carriers to allow each carrier channel to be transmitted simultaneously in the same optical fiber by using the bandwidth and low-loss characteristics of a single-mode optical fiber. Compared with a general single-channel system, the DWDM not only greatly improves the communication capacity of a network system, but also fully utilizes the bandwidth of the optical fiber, and has the advantages of simple capacity expansion, reliable performance and the like. DWDM is invented in the middle of the 90's of the last century, and the current DWDM technology can realize ultra-long and ultra-long distance transmission, and the electroless relay transmission distance reaches 3000km, and reaches 10000km in a laboratory. The relay transmission needs to amplify optical signals, but the optical amplification factors of different optical wavelengths may be different, resulting in different optical power of each wavelength, and the optical power must be adjusted before transmission to achieve the consistent optical power of each channel, which is shown as a typical ultra-long distance transmission solution of DWDM, and VMUX is an adjustable and wavelength division multiplexing device.
The chip mainly comprises two parts of wavelength division multiplexing and optical power adjustment, and the chip respectively realizes the optical combination of different wavelengths and the adjustment of the power of each wavelength, and requires low transmission loss, low polarization correlation loss and thermal insensitivity.
The defects of the prior art are respectively described below with respect to the optical tunable and wavelength division multiplexing integrated device, the wavelength division multiplexing unit, and the optical power tunable unit.
Overall chip/device aspect:
patent ZL201811562327.2 (an adjustable optical power wavelength division multiplexer and a manufacturing method thereof) proposes an adjustable optical power wavelength division multiplexer and a manufacturing method thereof, fig. 2 is a schematic diagram of the adjustable optical power wavelength division multiplexer according to the prior art, and as shown in fig. 2, the adjustable optical power wavelength division multiplexer is mainly formed by assembling two optical devices, namely an arrayed waveguide grating and an adjustable optical attenuator, and a control circuit. The device belongs to the defects of large volume, slow light adjustable response and the like of a discrete optical chip package combination.
Patent zl201710326987.x (a monolithically integrated dimmable power demultiplexer and a manufacturing method thereof) proposes a monolithically integrated dimmable power demultiplexer and a manufacturing method thereof, fig. 3 is a schematic diagram of a monolithically integrated dimmable power demultiplexer according to the prior art, as shown in fig. 3, optical power tuning is realized by a thermally tuned mach-zehnder interferometer, wavelength division multiplexing is realized by an arrayed waveguide grating, and the two are connected by an array 2. Belongs to integrated optical devices, but has the defects of slow optical tunable response and the like.
The utility model 201120568388.7 (a tunable attenuation wavelength division multiplexing module) proposes a tunable attenuation wavelength division multiplexing module, and fig. 4 is a schematic diagram of a tunable attenuation wavelength division multiplexing module according to the prior art, as shown in fig. 4, comprising an arrayed waveguide grating, an isolator and a tunable optical attenuator array optical coupling connection. The device belongs to the defects of discrete optical chip packaging combination, large volume, slow light adjustable response and the like.
The wavelength division multiplexing aspect:
the integrated optical wavelength division multiplexing mainly has two structures of an array waveguide grating and an etched diffraction grating from a functional structure, wherein the array waveguide grating comprises an input/output array optical waveguide, an input/output flat waveguide and an array waveguide, which are all based on a Rowland circle structure, FIG. 5 is a schematic diagram of the input/output of the array waveguide grating according to the prior art, as shown in FIG. 5, the input/output optical waveguides of the array waveguide grating are respectively positioned on two symmetrical Rowland circles, FIG. 6 is a schematic diagram of the etched diffraction grating according to the prior art, as shown in FIG. 6, the input/output of the etched diffraction grating are both positioned on the same Rowland circle.
The arrayed waveguide grating material comprises silicon dioxide SiO2 doped with GeO2, silicon Si, indium phosphide InP and the like, particularly, the silicon dioxide SiO2 doped with GeO2 is relatively mature in design and manufacture and wide in application, such as invention patents ZL201811108207.5 (a thermal compensation light wave multiplexing and demultiplexing chip and a preparation method thereof), ZL201910114206.X (an array waveguide grating chip on the same side) and the like.
The etched diffraction grating is developed along with the development of silicon photonic integration, the material is mainly silicon Si, the core cladding has large refractive index difference, the structural design of the etched diffraction grating is still in development, and the main problem is that the etched diffraction grating has insufficient light reflection to cause large insertion loss. The invention patents ZL 02112250.4 (flat-top etching diffraction grating wavelength division multiplexing device based on multiple sub-gratings), ZL02111755.1 (pass band flattening wavelength division multiplexing device adopting air groove gradual change output waveguide), ZL02159350.7 (low return loss etching diffraction grating wavelength division multiplexing device), ZL02112346.2 (etching diffraction grating wavelength division multiplexing device), utility model 200520013804.1 (etching diffraction grating with double-layer conical structure), ZL201510373320.6 (Bragg _ concave diffraction grating wavelength division multiplexing device with double grating and double wave bands) and ZL201510373319.3 (etching diffraction grating wavelength division multiplexing device with Bragg tooth surface structure and design method thereof) all focus on the design of diffraction grating for structural innovation, but still fail to solve the problem that the insertion loss of the device is large due to insufficient reflection of the diffraction grating, and the balance of each channel is poor.
Disclosure of Invention
The embodiment of the application provides an integrated structure of optical modulation and wavelength division multiplexing, which is used for at least solving the problems of optical wavelength division multiplexing in the prior art.
According to an aspect of the present application, an integrated optical tunable and wavelength division multiplexing structure is provided, which is fabricated from an SOI wafer, the SOI wafer comprising a base silicon, a buried oxide layer, and a device layer, wherein the following structure is fabricated on the device layer: the etched diffraction grating is used for diffracting light and outputting the light, wherein the light with different wavelengths after passing through the etched diffraction grating obtains different phase delays in the slab waveguide and is focused at different output waveguide positions; the adjustable optical attenuation structure is used for adjusting the light from the etched diffraction grating; and the thermal isolation groove is arranged between the etched diffraction grating and the adjustable optical attenuation structure and is used for thermally isolating the etched diffraction grating from the adjustable optical attenuation structure.
Further, the following structures are processed in the device layer: an input tapered waveguide for coupling the light into the etched diffraction grating; and the output tapered waveguide is used for coupling out the light passing through the variable optical attenuation structure.
Further, the etched diffraction grating includes: the diffraction grating is a concave diffraction grating, the input waveguide and the output waveguide are arranged on a Rowland circle with the radius of R according to a preset interval, and the grating tooth surfaces in the diffraction grating are arranged on an arc with the radius of 2R.
Further, the etching the diffraction grating further includes: the slab waveguide is used as a free transmission region, wherein the upper part of the slab waveguide is subjected to shallow etching, and the shallow etching part is used for polarization compensation.
Further, the polarization compensation is used to compensate for transverse electric and magnetic modes.
Furthermore, a reflecting layer is plated on the grating surface of the diffraction grating.
Further, a silicon oxide layer with a thickness of one quarter of the wavelength is thermally oxidized on the grating surface of the diffraction grating, and aluminum is deposited on the silicon oxide layer to serve as the metal reflecting layer.
Further, the etching the diffraction grating further includes: an air cavity, wherein the diffraction grating is located on a side of the air cavity.
Further, the number of the input waveguides is one or more, the number of the output waveguides is an output waveguide array, and the array number of the output waveguide array is determined according to the wavelength.
Further, the thermal isolation groove is a deep etching groove.
In the embodiment of the present application, the integrated structure of optical tunable and wavelength division multiplexing is processed from an SOI wafer, where the SOI wafer includes a substrate silicon, a buried oxide layer, and a device layer, where the device layer is processed to have the following structure: the etched diffraction grating is used for diffracting light and outputting the light, wherein the light with different wavelengths after passing through the etched diffraction grating obtains different phase delays in the slab waveguide and is focused at different output waveguide positions; the adjustable optical attenuation structure is used for adjusting the light from the etched diffraction grating; and the thermal isolation groove is arranged between the etched diffraction grating and the adjustable optical attenuation structure and is used for thermally isolating the etched diffraction grating from the adjustable optical attenuation structure. The method and the device solve the problems of optical wavelength division multiplexing in the prior art, thereby realizing the combination of light with continuously adjustable optical power and different wavelengths on the same substrate material.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this application, illustrate embodiments of the application and, together with the description, serve to explain the application and are not intended to limit the application. In the drawings:
figure 1 is a schematic diagram of a DWDM solution according to the prior art;
FIG. 2 is a schematic diagram of a tunable optical power wavelength division multiplexer according to the prior art;
FIG. 3 is a schematic diagram of a monolithically integrated tunable optical power demultiplexer according to the prior art;
FIG. 4 is a schematic diagram of a tunable attenuation wavelength division multiplexing module according to the prior art;
FIG. 5 is a schematic illustration of arrayed waveguide grating input/output according to the prior art;
FIG. 6 is a schematic diagram of etching a diffraction grating according to the prior art;
FIG. 7 is a first schematic diagram illustrating an integration of a silicon photonics diffractive grating structure and a pin-junction based light attenuating structure according to an embodiment of the present application;
FIG. 8 is a second schematic diagram illustrating the integration of a silicon photonics diffractive grating structure and a pin junction-based light attenuating structure in accordance with an embodiment of the present application;
FIG. 9 is a schematic diagram of a diffraction grating and an air cavity according to an embodiment of the present application;
FIG. 10 is a schematic side view of an integration of a silicon photonics diffractive grating structure and a pin-junction based light attenuating structure in accordance with an embodiment of the present application;
FIG. 11 is a schematic diagram of a linear vertical taper waveguide according to an embodiment of the present application; and the number of the first and second groups,
FIG. 12 is a schematic diagram of a curved vertical tapered waveguide according to an embodiment of the present application.
Detailed Description
It should be noted that the embodiments and features of the embodiments in the present application may be combined with each other without conflict. The present application will be described in detail below with reference to the embodiments with reference to the attached drawings.
It should be noted that the steps illustrated in the flowcharts of the figures may be performed in a computer system such as a set of computer-executable instructions and that, although a logical order is illustrated in the flowcharts, in some cases, the steps illustrated or described may be performed in an order different than presented herein.
In this embodiment, an integrated optical tunable and wavelength division multiplexing structure is provided, where the integrated optical tunable and wavelength division multiplexing structure is processed from an SOI wafer, where the SOI wafer includes a substrate silicon, a buried oxide layer, and a device layer, where the following structure is processed in the device layer: the etched diffraction grating is used for diffracting the light and outputting the light, wherein the light with different wavelengths after the etched diffraction grating obtains different phase delays in the slab waveguide and is focused at different output waveguide positions; the adjustable optical attenuation structure is used for adjusting the light from the etched diffraction grating; and the thermal isolation groove is arranged between the etched diffraction grating and the adjustable optical attenuation structure and is used for thermally isolating the etched diffraction grating from the adjustable optical attenuation structure.
By the structure, the combination of light with continuously adjustable optical power and different wavelengths is realized on the same substrate material, and the thermal isolation is realized. There are many ways of thermal isolation, for example, thermal isolation can be performed by deep etching a trench.
The following structures are also processed in the device layer: an input tapered waveguide for coupling light into the etched diffraction grating; and the output tapered waveguide is used for coupling out the light passing through the adjustable optical attenuation structure.
The etching of the diffraction grating structure may be achieved in a number of ways, for example, etching the diffraction grating may include: the diffraction grating is a concave diffraction grating, the input waveguide and the output waveguide are arranged on a Rowland circle with the radius of R according to a preset interval, and the grating tooth surfaces in the diffraction grating are arranged on an arc with the radius of 2R.
To reduce losses, the grating face of the diffraction grating may be coated with a reflective layer. For example, a silicon oxide layer having a thickness of a quarter wavelength thick may be thermally oxidized on the grating face of the diffraction grating, and aluminum may be deposited on the silicon oxide layer as a metal reflective layer. Optionally, the etching diffraction grating may further include: an air cavity, wherein the diffraction grating is located on a side of the air cavity.
For polarization compensation, etching the diffraction grating may further comprise: a slab waveguide as a free transmission region, wherein a portion of the slab waveguide is shallowly etched, wherein the shallowly etched portion is used for performing polarization compensation (for example, the polarization compensation is used for compensating a transverse electric mode and a transverse magnetic mode).
In the embodiment, an integrated optical structure with optical modulation and wavelength division multiplexing is provided, in which a metal reflective layer is plated on an oxidized etched diffraction grating surface to improve the reflectivity of the etched diffraction grating and reduce transmission loss; and the shallow etching is carried out on the upper part of the free transmission flat waveguide, so that the polarization compensation is realized, and the polarization-related loss is reduced.
In this embodiment, various structures of the variable optical attenuator VOA may be used, for example, the integrated optical VOA may include a thermo-optical VOA based on mach-zehnder interference, an electro-absorption VOA, and the like. From these configurations, VOAs can be selected for integration. In the embodiment, the adjustable electro-absorption continuous light can be realized by using the pin-type ridge waveguide, so that the transmission loss is small and the response is fast.
In this embodiment, an integrated optical VOA based on electro-absorption, which may also be referred to as a silicon photonic pin junction optical attenuation structure, may be provided, where the silicon photonic pin junction optical attenuation structure is manufactured based on an SOI wafer, and the SOI wafer includes: the device comprises a substrate layer, an oxygen burying layer and a device layer, wherein at least a first part is remained after the device layer is etched, the device layer on two sides of the first part is etched, and the first part is a silicon optical transmission waveguide; a first step and a second step are respectively formed on two sides of the silicon optical transmission waveguide, wherein the first step is an ion implantation or diffusion step, and the second step is an ion implantation or diffusion step; forming a P area and/or an N area on the first step, and forming an N area and/or a P area on the second step; forming a metal interconnection column on the P area and forming a metal interconnection column on the N area; forming a metal interconnection layer on one of the P regions, wherein the metal interconnection layer formed on the P region is used for connecting metal interconnection columns on the P region; and forming a metal interconnection layer on one of the N regions, wherein the metal interconnection layer formed on the N region is used for connecting the metal interconnection columns on the N region. When etching, an isolation groove can be etched on the device layer, and the device layer between the isolation groove and the etched-off parts on two sides of the silicon optical transmission waveguide is reserved. The structure is a tunable optical attenuation structure with wide attenuation range and fast response.
The P region and the N region may be formed in various ways, for example, a P region is formed on the first step, and an N region is formed on the second step; for another example, at least one P region is formed on the first step, a corresponding N region is formed at a position of the second step corresponding to the P region on the first step, at least one N region is formed on the first step, and a corresponding P region is formed at a position of the second step corresponding to the N region on the first step. In the case where a plurality of P regions or N regions are present, no metal interconnection layer is formed and the P regions and the N regions on the silicon optical transmission waveguide side are connected. There are also a number of ways to make the metal pads, and in an alternative embodiment, a passivation layer is deposited on the metal interconnect layer over the P and N regions, and the metal pads for the P and N regions are formed by windowing the passivation layer. And filling a filling medium on the formed P region and the N region, wherein the filling medium is a preset distance away from the thickness of the silicon optical transmission waveguide after filling. The filling medium may be of various types, for example, the filling medium may include at least one of: silicon dioxide, silicon dioxide doped with phosphorus and boron, divinyl siloxane bis-benzocyclobutene and monocrystalline silicon. The shape of the silicon light-transmitting waveguide may be various, and for example, may be a stripe or a ridge. After the device layer is etched, a second part coupled with the first part is remained besides the first part, and the second part comprises a silicon photonic waveguide taper section and a broadening section, wherein the silicon photonic waveguide taper section is coupled with the silicon photon transmission waveguide, and the width of the broadening section is greater than that of the silicon photonic waveguide taper section; and a vertical tapered waveguide and an outer extension wide section are arranged on the silicon optical waveguide tapered section and the extension wide section, wherein the width of the outer extension wide section is larger than that of the vertical tapered waveguide. The vertical taper waveguide may be a linear vertical taper waveguide or may be a curved vertical taper waveguide as shown in fig. 11 and 12, which may be referred to as a 3D waveguide, which may be used as the input 3D taper waveguide 316 and the output 3D taper waveguide 322.
This is described below in connection with an alternative embodiment. In this alternative embodiment, an integrated optical chip for optical modulation and wavelength division multiplexing is provided, where optical power is continuously adjustable and light with different wavelengths is combined on the same substrate material, and the two are thermally isolated by deep etching a trench, and the polarization dependent loss is low.
First, the principle of etching a diffraction grating is explained: fig. 6 shows a working schematic diagram of an etched diffraction grating, which is composed of four parts, i.e., an input waveguide, an output waveguide, a free transmission region and a concave grating, wherein the input waveguide and the output waveguide are arranged on a rowland circle with a radius of R according to a specific interval, grating tooth surfaces are arranged on an arc with a radius of 2R, and the projection interval of the middle point of the adjacent tooth surfaces on a grating line (the tangent line of the central point of the grating) is a constant d, which is the grating period. Different wavelength lights diffracted by the grating obtain different phase delays in the slab waveguide and are then focused at different output waveguide positions. The positions of the input and output waveguides follow the grating equation:
neff·d·(sinθi+sinθd)＝mλ (1)
where λ is the wavelength in vacuum, neffIs the effective refractive index of the slab mode at λ, d is the grating period, m is the grating diffraction order, θiIs the angle of incidence, θdIs the diffraction angle.
Although the present embodiment also adopts the etched diffraction grating as the wavelength division multiplexing structure, the following improvements are made in the present embodiment: 1) plating a metal reflecting layer on the surface of the oxidized etched diffraction grating to increase the reflectivity of the etched diffraction grating; 2) shallow etching is carried out on the upper part of the free transmission flat waveguide to realize polarization compensation and reduce polarization-dependent loss; 3) and the adjustable optical attenuation structure are integrated on the same substrate material, and the adjustable optical attenuation structure are thermally isolated by deeply etching a groove.
Although the electro-absorption tunable optical attenuation principle is not the focus of the present embodiment, it will be briefly described below.
In classical dispersion theory, the change of the free carrier concentration changes the real part and the imaginary part of the complex refractive index of the silicon material, namely the change of the general refractive index n and the absorption coefficient alpha. The Drude model is described below (Soref R.A and Lorenzo J. P. all-silicon active and passive-wave components for. lambda. 1.3 and. lambda. 1.6 μm. IEEE Journal of Quantum Electronics,1986,22(6):873 and 879),
wherein q is the electronic charge, λ is the wavelength of light wave, n is the general refractive index of pure silicon, ε0Is the free space dielectric constant, c is the speed of light in vacuum,
and
respectively an electron effective mass and a hole effective mass, NeAnd NhRespectively, the free electron concentration and the free hole concentration, μeAnd mupRespectively electron mobility and hole mobility.
The Drude model does not take into account the scattering process of carriers, including phonon assist or impurity assist in the material, Nedeljkovic M and Soref R et al (Nedeljkovic M, Soref R.A, and Mashanovich G.Z.Free-carrier electro-refration and electro-absorption modulation expressions for silicon over the 1-14 micro-induced wavelength range IEEE Photonics Journal,2011,3(6): 1171-1180) obtain the variation of the real and imaginary parts of the complex refractive index of the silicon material under the variation of the carrier concentration through experiments and the Kramers-Kronig relationship, and the variation of the real and imaginary parts of the complex refractive index under the condition of 1550nm
Δn＝-5.4×10-22ΔN1.011-1.53×10-18ΔP0.838 (3)
Δα＝8.88×10-21ΔN1.167+5.84×10-20ΔP1.109 (4)
When the input optical power is PInThen, through the power-on pn region with length L, the output optical power is as follows due to the absorption of the carriers
Pout＝Pin·exp(-α·L) (5)
Wherein α comprises the intrinsic absorption coefficient α of the silicon material0And a carrier absorption coefficient Δ α. According to the definition of insertion loss, there are
In the formula, alpha0Generally taken as alpha0＝0.023/cm。
The key point of this embodiment is that the etched diffraction grating and the tunable optical structure are integrated on the same substrate material, and the etched diffraction grating and the tunable optical structure are thermally isolated from each other by deep etching trenches. In the optional embodiment, the wavelength division multiplexing structure based on the etched diffraction grating and the adjustable optical attenuation structure based on the silicon pin type electric absorption effect are integrated on the same substrate material, and the wavelength division multiplexing structure and the adjustable optical attenuation structure are isolated by the thermal isolation groove. The side surface of the etched diffraction grating is provided with a silicon oxide layer with the thickness of one quarter of the wavelength by thermal oxidation, and then a layer of high-quality metal aluminum is deposited to be used as a reflecting mirror surface, so that the light leakage is reduced, and the transmission loss is reduced. Etching the part of the etched diffraction grating close to the diffraction grating to compensate the transmission loss of a TE mode (transverse electric mode) and a TM mode (transverse magnetic mode) so as to realize the polarization independence of the silicon optical chip.
In this embodiment, the integration of the silicon photonic etching diffraction grating structure and the pin junction-based optical attenuation structure is described, the integrated optical grating structure is manufactured by using an SOI wafer substrate, a thin device layer (top layer silicon) SOI wafer with a thickness of 220nm, 310nm, 340nm, and the like, or a thick device layer SOI wafer with a thickness of 1-10 μm may be used, and an integrated optical functional structure with adjustable optical power and wavelength division multiplexing with low power consumption, high-speed response, and low insertion loss may be implemented, so as to form an integrated silicon photonic chip, which is described by taking the device layer with a thickness of 3 μm as an example. The specific implementation process comprises the following steps:
1) fig. 7 is a first schematic diagram of integration of a silicon photonic etching diffraction grating structure and a pin junction-based light attenuation structure according to an embodiment of the present application, fig. 8 is a second schematic diagram of integration of a silicon photonic etching diffraction grating structure and a pin junction-based light attenuation structure according to an embodiment of the present application, and fig. 10 is a side schematic diagram of integration of a silicon photonic etching diffraction grating structure and a pin junction-based light attenuation structure according to an embodiment of the present application, and as shown in fig. 7, 8 and 10, an SOI wafer 0 is composed of a base silicon 1, a buried oxide layer 2(BOX layer), and a device layer 3 (top layer silicon). An air cavity 312 for etching the diffraction grating 31, a diffraction grating 313 for etching the diffraction grating 31, a thermal isolation groove 33 for etching the diffraction grating 31 and the adjustable optical attenuation structure 32, and an isolation groove 321 for the adjustable optical attenuation structure 32 are processed on the device layer through semiconductor micro-processing technologies such as masking, photoetching, etching and the like, and are etched to the buried oxide layer 2, wherein the over-etching amount of the buried oxide layer 2 is at least more than 0.05 μm.
2) The etched diffraction grating 31 is composed of an air cavity 312, a diffraction grating 313, an output waveguide array 315, an input waveguide 311 and a polarization compensation structure 314. The diffraction grating 313 satisfies the grating equation (1) corresponding to the input waveguide 311 and the output waveguide array 315.
3) Fig. 9 is a schematic diagram of a diffraction grating and an air cavity according to an embodiment of the present application, and as shown in fig. 9, the diffraction grating 313 is located on the side of the air cavity 312 by thermally oxidizing a silicon oxide layer with a thickness of one quarter wavelength thick, and then depositing a layer of high-quality metallic aluminum with a thickness of not less than 100nm as a mirror surface to reduce light leakage and transmission loss. Before depositing the metal aluminum, a layer of TiN or TiW with the thickness of 20nm is deposited on the silicon oxide layer to enhance the adhesion of the metal aluminum and the silicon oxide layer.
4) The etched diffraction grating 31 is also provided with a polarization compensation structure 314, the etched diffraction grating 31 is processed by semiconductor micro-processing technologies such as mask, photoetching and etching, and the etching depth of the SOI wafer with a thick device layer of 1-10 mu m is 0.3-0.6 mu m; for the SOI wafer with the device layer thickness of 220nm, 310nm and 340nm, the etching depth is 0.07-0.15 μm. The polarization compensation structure 314 is used to compensate the transmission loss of the TE mode (transverse electric mode) and the TM mode (transverse magnetic mode) so as to make the silicon optical chip polarization independent.
5) The number of input waveguides 311 may be multiple or 1, the number of output waveguide arrays 315 may be determined according to design requirements, the wavelength intervals may be 20nm, 4.5nm, 3.2nm, 1.6nm, 0.8nm, 0.4nm, etc., and the number of arrays may be 4, 8, 16, 32, 40, 48, 96, 128, etc., as determined according to ITU (international telecommunications union) specifications.
6) The variable optical attenuation structure 32 includes a P electrode 323, an N electrode 324 (which may be interchanged), and an isolation trench 321, the detailed design of the structure has been described above, and is not the focus of the present embodiment, and the present embodiment focuses on integrating the etched diffraction grating and the tunable optical structure on the same substrate material, and the etched diffraction grating and the tunable optical structure are thermally isolated from each other by the thermal isolation trench 33.
7) The input 3D tapered waveguide and the output 3D tapered waveguide are introduced in the above, and the structure can realize high coupling efficiency of the integrated silicon optical chip with adjustable optical power and wavelength division multiplexing and the standard single-mode optical fiber. It is contemplated that other structures may be integrated.
The optional embodiment provides an integrated optical structure with optical modulation and wavelength division multiplexing, wherein a metal reflecting layer is plated on the surface of an oxidized etched diffraction grating to improve the reflectivity of the etched diffraction grating and reduce the transmission loss; polarization compensation is realized by shallow etching on the free transmission flat waveguide, and the polarization-related loss is reduced; the adjustable electro-absorption continuous light is realized through the pin-type ridge waveguide, the transmission loss is small, and the response is fast. The embodiment also provides an integrated optical chip for optical modulation and wavelength division multiplexing, which realizes the combination of continuously adjustable optical power and light with different wavelengths on the same substrate material, and the two are thermally isolated by deeply etching the groove, and the polarization correlation loss is low. The optional embodiment is easy to integrate with other silicon optical functional structures to form an integrated silicon optical chip, and the manufacturing process is compatible with the CMOS process and can be manufactured in batches.
In this embodiment, an electronic device is provided, comprising a memory in which a computer program is stored and a processor configured to run the computer program to perform the method in the above embodiments.
The programs described above may be run on a processor or may also be stored in memory (or referred to as computer-readable media), which includes both non-transitory and non-transitory, removable and non-removable media, that implement information storage by any method or technology. The information may be computer readable instructions, data structures, modules of a program, or other data. Examples of computer storage media include, but are not limited to, phase change memory (PRAM), Static Random Access Memory (SRAM), Dynamic Random Access Memory (DRAM), other types of Random Access Memory (RAM), Read Only Memory (ROM), Electrically Erasable Programmable Read Only Memory (EEPROM), flash memory or other memory technology, compact disc read only memory (CD-ROM), Digital Versatile Discs (DVD) or other optical storage, magnetic cassettes, magnetic tape magnetic disk storage or other magnetic storage devices, or any other non-transmission medium that can be used to store information that can be accessed by a computing device. As defined herein, a computer readable medium does not include a transitory computer readable medium such as a modulated data signal and a carrier wave.
These computer programs may also be loaded onto a computer or other programmable data processing apparatus to cause a series of operational steps to be performed on the computer or other programmable apparatus to produce a computer implemented process such that the instructions which execute on the computer or other programmable apparatus provide steps for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks, and corresponding steps may be implemented by different modules.
Such an apparatus and system is provided in this embodiment.
The system or the apparatus is used for implementing the functions of the method in the foregoing embodiments, and each module in the system or the apparatus corresponds to each step in the method, which has been described in the method and is not described herein again.
The above are merely examples of the present application and are not intended to limit the present application. Various modifications and changes may occur to those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the scope of the claims of the present application.
Claims (10)
1. An integrated structure of optical modulation and wavelength division multiplexing, characterized in that, the integrated structure of optical modulation and wavelength division multiplexing is processed by an SOI wafer, the SOI wafer comprises a substrate silicon, a buried oxide layer and a device layer, wherein, the following structure is processed on the device layer:
the etched diffraction grating is used for diffracting light and outputting the light, wherein the light with different wavelengths after passing through the etched diffraction grating obtains different phase delays in the slab waveguide and is focused at different output waveguide positions;
the adjustable optical attenuation structure is used for adjusting the light from the etched diffraction grating;
and the thermal isolation groove is arranged between the etched diffraction grating and the adjustable optical attenuation structure and is used for thermally isolating the etched diffraction grating from the adjustable optical attenuation structure.
2. The structure of claim 1, wherein the following structure is further processed at the device layer:
an input tapered waveguide for coupling the light into the etched diffraction grating;
and the output tapered waveguide is used for coupling out the light passing through the variable optical attenuation structure.
3. The structure of claim 1, wherein the etched diffraction grating comprises:
the diffraction grating is a concave diffraction grating, the input waveguide and the output waveguide are arranged on a Rowland circle with the radius of R according to a preset interval, and the grating tooth surfaces in the diffraction grating are arranged on an arc with the radius of 2R.
4. The structure of claim 3, wherein the etched diffraction grating further comprises:
the slab waveguide is used as a free transmission region, wherein the upper part of the slab waveguide is subjected to shallow etching, and the shallow etching part is used for polarization compensation.
5. The structure of claim 4, wherein the polarization compensation is used to compensate for transverse electric and magnetic modes.
6. The structure of claim 3, wherein the grating face of the diffraction grating is coated with a reflective layer.
7. The structure of claim 6, wherein a silicon oxide layer having a thickness of a quarter wavelength thick is thermally oxidized on the grating face of the diffraction grating, and aluminum is deposited on the silicon oxide layer as the metal reflective layer.
8. The structure of claim 3, wherein the etched diffraction grating further comprises:
an air cavity, wherein the diffraction grating is located on a side of the air cavity.
9. The structure of claim 3, wherein the input waveguide is one or more, the output waveguide is an array of output waveguides, and the array number of the array of output waveguides is determined according to the wavelength.
10. The structure of any one of claims 1 to 9, wherein the thermally isolated trench is a deep etched trench.
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