CN113718333A - Uniform gas box and gas conveying assembly of epitaxial furnace - Google Patents
Uniform gas box and gas conveying assembly of epitaxial furnace Download PDFInfo
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- CN113718333A CN113718333A CN202111020536.6A CN202111020536A CN113718333A CN 113718333 A CN113718333 A CN 113718333A CN 202111020536 A CN202111020536 A CN 202111020536A CN 113718333 A CN113718333 A CN 113718333A
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- 239000007789 gas Substances 0.000 claims abstract description 172
- 239000012495 reaction gas Substances 0.000 claims abstract description 71
- 238000006243 chemical reaction Methods 0.000 claims abstract description 27
- 238000001816 cooling Methods 0.000 claims description 37
- 238000009826 distribution Methods 0.000 claims description 21
- 239000000110 cooling liquid Substances 0.000 claims description 8
- 239000000376 reactant Substances 0.000 claims description 4
- 239000000758 substrate Substances 0.000 abstract description 20
- 239000013078 crystal Substances 0.000 abstract description 12
- 239000007788 liquid Substances 0.000 description 11
- 238000000034 method Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 5
- 239000011148 porous material Substances 0.000 description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 5
- 229910010271 silicon carbide Inorganic materials 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910003822 SiHCl3 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000036760 body temperature Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000009828 non-uniform distribution Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention relates to the technical field of epitaxial growth, and particularly discloses a gas homogenizing box and a gas conveying assembly of an epitaxial furnace, wherein the gas homogenizing box is used for conveying reaction gas to a reaction chamber of the epitaxial furnace and comprises: for feeding reaction gases towards a reaction chamber of an epitaxial furnace, comprising: the box body is 10-30cm in length, a plurality of air holes are formed in the box body along the length direction of the box body, each air hole comprises a plurality of small holes and a plurality of large holes, and the large holes are symmetrically formed in two sides of each small hole; the length of the gas homogenizing box is 10-30cm, so that reaction gas can be conveyed in the box body along the gas holes to form a plurality of parallel flowing reaction gas flows, the reaction gas output by the gas homogenizing box is stable and not disordered, crystal growth is more uniform, meanwhile, the gas holes are arranged to be small in the middle and large in two sides, the flow rate of the gas flows at the edges of the two sides is higher than that of the gas flows at the edges of the two sides, which are guided out by a traditional gas guide cylinder, and the problem of poor temperature uniformity of the edges of the substrate is solved.
Description
Technical Field
The application relates to the technical field of epitaxial growth, in particular to a uniform gas box and a gas conveying assembly of an epitaxial furnace.
Background
The epitaxial growth process is a process of depositing a single crystal thin film layer on the surface of a single crystal substrate.
For example, in the case of vapor phase epitaxy of silicon carbide, CVD (chemical vapor deposition) method for producing silicon carbide usually uses hydrogen or argon as a carrier gas and a silicon source gas (e.g., SiH) as a deposition source4、SiHCl3Etc.) and a carbon source gas (e.g., CH)4、C3H8、C2H4Etc.) is introduced into the reaction chamber to perform a high-temperature reaction so as to form a silicon carbide epitaxial layer on the substrate; after the reaction gas enters the reaction chamber, it is necessary to pass through the substrate in a laminar flow state as much as possible to ensure smooth growth of the crystal.
The gas delivery assembly of the existing CVD epitaxial furnace is shown in FIG. 1, and comprises a gas inlet plate 101, a flow equalizing plate 102 and a gas cylinder 103, wherein the flow equalizing plate 102 is provided with a gas outlet for the distribution and uniform flow of reaction gas, and the assembly utilizes the gas cylinder 103 to guide and deliver the gas distributed by the flow equalizing plate 102; however, the study shows that the non-uniform distribution of the gas flow velocity in the radial direction of the substrate surface can cause non-uniform temperature, and the substrate rotation method is usually adopted to improve the problem, but the substrate rotation method can only improve the temperature uniformity of the middle part of the substrate, and the temperature uniformity of the edge of the substrate is still poor, the main reason is that when the reaction gas is introduced, the gas flow at the edge of the substrate is weak, and the reason for the weak edge gas flow is that the gas is merged and conveyed in the gas cylinder 103 after being divided by the flow equalizing plate 102, so that the flow rate at the edge of the gas flow is insufficient.
In view of the above problems, no effective technical solution exists at present.
Disclosure of Invention
An object of the application is to provide a gas homogenizing plate and a gas conveying assembly of an epitaxial furnace, which ensure that reaction gas can be stably guided out and the flow velocity of the edges of two sides of the gas flow is higher than that of the gas flow of the edges of two sides guided out by a traditional gas guide cylinder, thereby solving the problem of poor temperature uniformity of the edges of a substrate.
In a first aspect, the present application provides a unified pod for an epitaxial furnace for delivering reactant gases toward a reaction chamber of the epitaxial furnace, comprising: the box body is 10-30cm in length, a plurality of air holes are formed in the box body along the length direction of the box body, the air holes comprise a plurality of small holes and a plurality of large holes, and the large holes are symmetrically formed in two sides of the small holes.
According to the gas homogenizing box of the epitaxial furnace, the gas homogenizing plate which is originally of a plate-shaped structure is designed into a box body with the length of 10-30cm, reaction gas from the gas inlet plate is received and shunted by using gas holes in the box body, and the reaction gas is conveyed in the box body along the gas holes to form a plurality of reaction gas flows flowing in parallel, so that the reaction gas output by the gas homogenizing box is ensured to be stable and not to be disordered, and the crystal growth is more uniform; in addition, the air holes are arranged in a mode that the middle is small and the two sides are large, so that the flow velocity of the airflow at the two side edges is higher than that of the airflow at the two side edges guided by the traditional air guide cylinder, and the problem of poor temperature uniformity of the edge of the substrate is solved.
The gas homogenizing box of the epitaxial furnace is characterized in that a plurality of small holes are arrayed in the middle of the box body in an equidistant mode, and the large holes located on the same side of the small holes are arrayed in an equidistant mode.
A homogas box of epitaxial furnace, wherein, have the inlet end plane of locating its length direction both ends and being parallel to each other and give vent to anger the end plane, the aperture both ends are connected respectively the inlet end plane with the end plane of giving vent to anger, the box body has the inclined plane towards the slope of middle part along length direction's both sides, the macropore both ends are connected respectively the inlet end plane with the inclined plane.
The gas homogenizing box of the epitaxial furnace is characterized in that the inclined plane is a plane and an arc-shaped curved surface.
The gas homogenizing box of the epitaxial furnace is characterized in that the arrangement distance of the large holes is larger than that of the small holes.
The gas homogenizing box of the epitaxial furnace is characterized in that the caliber of the large hole is 1.2-1.5 times that of the small hole.
The utility model provides a gas homogenizing box of epitaxial furnace, wherein, be equipped with at least one cooling chamber in the box body, the cooling chamber is used for letting in the coolant liquid in order to adjust the box body temperature.
The gas homogenizing box of the epitaxial furnace is characterized in that the number of the cooling cavities is two, and the two cooling cavities are symmetrically arranged at the upper end and the lower end of the gas hole.
The utility model provides a gas homogenizing box of epitaxial furnace, wherein, cooling chamber inlet end and flowing back end are located same one side of box body.
In a second aspect, the present application also provides a gas delivery assembly for an epitaxial furnace for delivering a reactant gas toward a reaction chamber of the epitaxial furnace, the assembly comprising:
the gas inlet plate is used for introducing reaction gas;
the gas homogenizing box of the epitaxial furnace;
the air inlet plate is fixedly connected with the air inlet side of the box body, the air inlet plate is provided with an air guide cavity and an air tap connected to the air guide cavity, and the air guide cavity is communicated with the air hole.
According to the gas conveying assembly of the epitaxial furnace, the original gas homogenizing plate with a plate-shaped structure is designed into the gas homogenizing box with the length of 10-30cm, the reaction gas from the gas inlet plate is received and shunted by the gas holes in the gas homogenizing box, and the reaction gas is conveyed in the gas homogenizing box along the gas holes to form a plurality of parallel flowing reaction gas flows, so that the reaction gas output by the gas homogenizing box is stable and not disordered, and the crystal growth is more uniform; in addition, the air holes are arranged in a mode that the middle is small and the two sides are large, so that the flow velocity of the airflow at the two side edges is higher than that of the airflow at the two side edges guided by the traditional air guide cylinder, and the problem of poor temperature uniformity of the edge of the substrate is solved.
From the above, the present application provides an even gas box and gas delivery subassembly of epitaxial furnace, wherein, even gas box length is 10-30cm, thereby can make reaction gas carry along the gas pocket in the box body and form a plurality of parallel flow's reaction gas air current, ensure that the reaction gas of even gas box output is stable not disorderly, make crystal growth more even, arrange the gas pocket into the form that the centre is little, both sides are big simultaneously, make the velocity of flow of both sides edge air current be higher than the velocity of flow of both sides edge air current that traditional gas guide cylinder derived, thereby solve the poor problem of the temperature homogeneity of substrate edge.
Drawings
Fig. 1 is an exploded view of a prior art gas delivery assembly.
Fig. 2 is a schematic perspective view of an embodiment 1 of a gas distribution box of an epitaxial furnace according to an embodiment of the present application.
Fig. 3 is a rear view structural schematic diagram of an embodiment 1 of a gas distribution box of an epitaxial furnace according to an embodiment of the present application.
Fig. 4 is a schematic cross-sectional view of an embodiment 1 of a gas distribution box of an epitaxial furnace according to an embodiment of the present application.
Fig. 5 is a schematic perspective view of an embodiment 2 of a gas distribution box of an epitaxial furnace according to an embodiment of the present application.
Fig. 6 is a schematic cross-sectional view of an embodiment 2 of a gas distribution box of an epitaxial furnace according to an embodiment of the present application.
Fig. 7 is a schematic perspective view of an embodiment 3 of a gas distribution box of an epitaxial furnace according to an embodiment of the present application.
Fig. 8 is a schematic cross-sectional view of an embodiment 3 of a gas distribution box of an epitaxial furnace according to an embodiment of the present application.
Fig. 9 is a schematic structural diagram of a gas delivery assembly of an epitaxial furnace according to an embodiment of the present disclosure.
Fig. 10 is a schematic structural view of the intake plate.
Reference numerals: 1. a box body; 2. a cooling chamber; 3. a small hole; 4. macropores; 5. an air intake plate; 6. a gas conducting cavity; 7. an air tap; 8. a liquid inlet; 9. a liquid discharge port; 10. mounting grooves; 11. an air intake portion; 12. a narrowing portion; 13. an air outlet part; 14. a gas inlet end plane; 15. a gas outlet end plane; 16. a bevel.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the accompanying drawings are illustrative only for the purpose of explaining the present invention, and are not to be construed as limiting the present invention.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like, indicate orientations and positional relationships based on those shown in the drawings, and are used only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be considered as limiting the present invention. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first", "second", may explicitly or implicitly include one or more of the described features. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; may be mechanically connected, may be electrically connected or may be in communication with each other; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the present invention, unless otherwise expressly stated or limited, "above" or "below" a first feature means that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact with each other via another feature therebetween. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
The following disclosure provides many different embodiments or examples for implementing different features of the invention. To simplify the disclosure of the present invention, the components and arrangements of specific examples are described below. Of course, they are merely examples and are not intended to limit the present invention. Furthermore, the present invention may repeat reference numerals and/or letters in the various examples, such repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed. In addition, the present invention provides examples of various specific processes and materials, but one of ordinary skill in the art may recognize applications of other processes and/or uses of other materials.
Referring to fig. 2-8, in a first aspect, fig. 2-8 illustrate a distribution box of an epitaxial furnace for supplying reaction gases to a reaction chamber of the epitaxial furnace, in some embodiments of the present application, including: the box body 1, box body 1 length is 10-30cm, is equipped with a plurality of gas pockets that set up along its length direction in the box body 1, and a plurality of gas pockets include a plurality of apertures 3 and a plurality of macropores 4, and a plurality of macropores 4 symmetry branch locates aperture 3 both sides.
Specifically, the gas pocket is for setting up along the length direction of box body 1, and a plurality of gas pockets are parallel arrangement promptly, and have the airflow channel of certain length, and during the in-service use, a plurality of gas pockets will be from the leading-in gas reposition of redundant personnel of air inlet plate 5 and make gas forward transport along the airflow channel of gas pocket to form a plurality of parallel flow's reaction gas air current, the reaction gas air current breaks away from and steadily carries out epitaxial growth in getting into the reacting chamber of epitaxial furnace behind the gas pocket.
According to the gas homogenizing box of the epitaxial furnace, the original gas homogenizing plate with a plate-shaped structure is designed into the box body 1 with the length of 10-30cm, the reaction gas from the gas inlet plate 5 is received and divided by the gas holes in the box body 1, the reaction gas is conveyed in the box body 1 along the gas holes to form a plurality of reaction gas flows flowing in parallel, the reaction gas output by the gas homogenizing box is ensured to be stable and not to be disordered, and the crystal growth is more uniform; in addition, the gas holes are arranged in a mode that the middle is small and the two sides are large, under the condition of the same flow rate, the flow of the reaction gas flow in the large hole 4 is larger than that of the reaction gas flow in the small hole 3, so that the reaction gas flow output by the box body 1 is the flow rate of the gas flow at the two sides relative to the flow rate of the gas flow larger than that at the middle, after the reaction gas is led out from the box body 1, the gas is converged, so that the flow rate of the gas flow at the two side edges is higher than that of the gas flow at the two side edges led out by a traditional gas cylinder, and the problem of poor temperature uniformity of the edge of the substrate is solved.
More specifically, the two sides of the small hole 3 are provided with the large holes 4, so that the air flow at the two side edges of the substrate can be improved simultaneously, and the smooth growth of the crystal can be ensured.
In addition, the gas homogenizing box of the epitaxial furnace in the embodiment of the application designs the gas homogenizing plate which is originally in a plate-shaped structure into the flat and long box body 1, and the staging hole which is originally used for gas distribution in the box body 1 is changed into the air hole with a certain circulation length, so that the gas homogenizing box has the gas homogenizing and guiding functions, a gas guide cylinder in the original structure can be omitted by the gas conveying assembly, and the number of combined parts of the gas conveying assembly is reduced.
In some preferred embodiments, a plurality of small holes 3 are arranged in the middle of the box 1 at equal intervals, and the large holes 4 on the same side of the small holes 3 are arranged at equal intervals.
More specifically, the small holes 3 and the large holes 4 are arranged at equal intervals, so that the reaction gas flow can be stably output when being sent out from the box body 1, and the gas flow disorder caused by uneven intervals of the reaction gas flow can be avoided.
More specifically, the large holes 4 on both sides of the small hole 3 are in the same number and are symmetrically arranged, so that the reaction gas flow led out from the box body 1 is ensured to have symmetry, the gas on the surface of the substrate is ensured to be symmetrically distributed uniformly, and the crystal growth quality is improved.
In some preferred embodiments, the box body 1 has an inlet end plane 14 and an outlet end plane 15 which are arranged at both ends of the box body in the length direction and are parallel to each other, the small hole 3 has both ends connected to the inlet end plane 14 and the outlet end plane 15, respectively, the box body 1 has inclined planes 16 inclined toward the middle at both sides in the length direction, and the large hole 4 has both ends connected to the inlet end plane 14 and the inclined planes 16, respectively.
Specifically, the box body 1 comprises an air inlet part 11, a narrowing part 12 and an air outlet part 13 which are integrally connected, the narrowing part 12 is narrowed from two sides to the middle along the conveying direction of the air in the air hole, two ends of the small hole 3 are respectively connected with the end surface of the air inlet part 11 and the end surface of the air outlet part 13, and two ends of the large hole 4 are respectively connected with the end surface of the air inlet part 11 and the side surface of the narrowing part 12.
Specifically, the inlet end plane 14 and the outlet end plane 15 are outer end faces that are away from each other between the inlet portion 11 and the outlet portion 13, respectively, and the inclined plane 16 is a narrowed side face on both sides of the narrowed portion 12.
Specifically, the end face of the gas outlet part 13 is used for outputting the reaction gas flow in the small hole 3, the side face of the narrowing part 12 is used for outputting the reaction gas flow in the large hole 4, because the flow rates of the reaction gas flows conveyed by the small hole 3 and the large hole 4 are different, if two flows are released on the same end face at the same time, the two flows are diffused at the same time, the diffusion and intersection positions of the flows output between the large hole 4 and the small hole 3 are easy to influence each other to generate gas flow disorder, therefore, the outlet end of the large hole 4 is arranged at the narrowing part 12, the reaction gas flow in the large hole 4 is released and diffused at first to form stable converged flow to be conveyed forwards, then the reaction gas flow in the small hole 3 is released, the reaction gas flow released by the small hole 3 is converged with the stable flow released in advance by the large hole 4 to be contacted, and serious gas disorder can not be generated, thereby ensuring the conveying stability and the distribution stability of the reaction gas, Uniformity, and avoids the influence of gas disorder generated by reaction gas in the reaction chamber on the epitaxial growth process.
In addition, the longer stroke is also needed for the stable diffusion of the reaction gas flow with relatively large flow, and the outlet end of the large hole 4 is arranged on the side surface of the inclined surface 16, namely the narrowing part 12, which is also beneficial to the stable diffusion of the reaction gas flow and then is sent into the reaction chamber.
In some preferred embodiments, the ramp 16 is planar and curved, and correspondingly, the narrowing 12 is straight or curved.
Specifically, since the large holes 4 are arranged equidistantly, the narrowing shape of the narrowing portion 12 affects the position layout between the large holes 4, and further affects the diffusion state of the reaction gas after the reaction gas is led out, and the inclined surfaces 16 designed by the plane and the arc curved surfaces can enable the reaction gas flow led out by the large holes 4 to be quickly converged into a stable gas flow.
More specifically, in the present embodiment, the slope 16 is a flat surface.
In some preferred embodiments, the periphery of the air inlet 11 is an arc-shaped chamfered edge, which facilitates the assembly of the case 1.
In some preferred embodiments, the arrangement pitch of the large holes 4 is larger than that of the small holes 3.
Specifically, because the reaction gas flow rate led out by the large holes 4 is large, the arrangement distance of the large holes 4 is properly designed to be larger than that of the small holes 3 under the condition that the edge of the output gas of the box body 1 has enough flow rate, and the gas turbulence caused by mutual influence when the reaction gas flows output by the large holes 4 diffuse can be avoided.
In some preferred embodiments, the minimum distance between the outermost large holes 4 on the narrowing part 12 and the side surface of the air inlet part 11 is greater than the arrangement distance of the large holes 4, that is, the minimum distance between the outermost large holes 4 and the outermost side surface of the box body 1 is greater than the arrangement distance of the large holes 4, for example, the arrangement distance of the large holes 4 is 2cm, and the minimum distance between the large holes 4 and the side surface of the air inlet part 11 is set to be 2.5cm, so that the phenomenon that the reaction gas flow output by the outermost large holes 4 is excessively contacted with the wall of the reaction chamber to generate friction due to relative movement to cause a viscous phenomenon which can cause uneven gas flow velocity to influence temperature field distribution is avoided.
In some preferred embodiments, the aperture of the large holes 4 is 1.2 times to 1.5 times the aperture of the small holes 3, and the flow rate of the reaction gas in the large holes 4 is ensured to be larger than that in the small holes 3 under the condition that the supply of the reaction gas is sufficient.
In some preferred embodiments, the large pores 4 have a diameter of 0.45 to 0.8cm and the small pores 3 have a diameter of 0.3 to 0.6 cm.
In some preferred embodiments, there are 10-20 small pores 3 and 3-5 large pores 4 on each side of the small pores 3.
Because the reaction chamber has large heat radiation, reaction gas is easy to be heated to generate pre-reaction when not separating from the gas transmission component, so that amorphous phase particles are deposited on the gas guide tube 103, the temperature of the wall of the gas guide tube 103 is increased by the amorphous phase particles, the pre-reaction problem is aggravated, the gas holes on the uniform flow plate 102 are blocked under severe conditions, the reaction gas is blocked, and the epitaxial growth cannot be continued; therefore, in some preferred embodiments, at least one cooling chamber 2 is arranged in the box body 1, and the cooling chamber 2 is used for introducing cooling liquid to adjust the temperature of the box body 1.
Specifically, the cooling chamber 2 is used for circularly inputting cooling liquid, so that the temperature of the box body 1 is kept below the decomposition temperature of the reaction gas, namely, excessive temperature rise of the box body 1 caused by heat radiation of the reaction chamber is avoided, and the reaction gas conveyed in the gas hole is prevented from being heated to generate pre-reaction.
In addition, when the reaction gas flows in the air holes, the cooling cavity 2 utilizes the cooling liquid therein to continuously cool the box body 1 so as to adjust the temperature of the box body 1, and the reaction gas in the air holes of the box body 1 is prevented from being pre-reacted to block the air holes.
In some preferred embodiments, the box body 1 is made of stainless steel material, which has excellent thermal conductivity, and under the cooling effect of the cooling liquid in the cooling cavity 2, the box body 1 can more smoothly maintain the desired temperature and ensure the uniformity of the overall temperature distribution, thereby avoiding the problem of unstable airflow caused by the local expansion of the gas due to uneven heating in the gas holes.
In some preferred embodiments, there are two cooling cavities 2, and the two cooling cavities are symmetrically arranged at the upper end and the lower end of the air hole.
Specifically, set up two cooling chamber 2 and can ensure the cooling efficiency of box body 1 to make box body 1 temperature distribution more even, avoid reaction gas to be heated in the gas pocket and carry out the pre-reaction.
In some preferred embodiments, as shown in fig. 4 and 6, the cooling cavity 2 may be a region-type cavity structure, such as a rectangular parallelepiped cavity, a cylindrical cavity, etc., as shown in fig. 8, and the cooling cavity 2 may also be a flow channel-type cavity structure, such as a spiral flow channel cavity, a continuous S-shaped flow channel cavity, etc.; the box body 1 can be directly cooled in a large area by adopting a regional cavity structure, so that the overall temperature of the box body 1 is effectively prevented from being unevenly distributed, but the cooling liquid in the cooling cavity 2 is difficult to sufficiently circulate; the flow channel type cavity structure can ensure that cooling liquid fully circularly flows along a certain flow channel route, effectively avoids the integral temperature rise of the box body 1, and can possibly cause uneven local temperature distribution of the box body 1 according to the flow channel distribution design.
The uniform gas box provided by the embodiment of the application is mainly applied to a silicon carbide epitaxial furnace, and SiH of silicon carbide reaction raw material4The decomposition is started at 300 ℃, so that the pre-reaction of the reaction gas can be avoided by controlling the box body 1 below 200 ℃, the requirement on the temperature is relatively low, and the cooling cavity 2 preferably adopts a region type cavity structure so as to preferentially ensure that the temperature distribution of the box body 1 is uniform and ensure the stable output of the reaction gas flow.
In some preferred embodiments, the air holes are located at the middle height position in the box body 1, and the axes of the air holes are all located on the same plane, so that the box body 1 has vertical symmetry, the overall temperature distribution of the box body 1 is ensured to be more uniform, and the output reaction gas is more stable.
In some preferred embodiments, the cooling chamber 2 is provided with a liquid inlet end and a liquid outlet end on the same side of the housing 1, preferably on the side close to the gas inlet plate 5, whereby the cooling liquid circulation means can be accessed through the gas inlet plate 5.
Example 1
As shown in fig. 2-4, the box body 1 has a narrowing portion 12 narrowing along a straight line, so that the section of the narrowing portion 12 is trapezoidal, 22 air holes are arranged in the box body 1, wherein the air holes comprise 14 small holes 3 and 8 large holes 4, the large holes 4 are symmetrically arranged on two sides of the small holes 3 by taking 4 as a group and are respectively communicated with two side surfaces of the narrowing portion 12, the diameter of the small holes 3 is 0.6cm, and the diameter of the large holes 4 is 0.72 cm; two cooling cavities 2 are arranged in the box body 1 and are positioned at the upper end and the lower end of the air hole, the shapes of the two cooling cavities 2 are consistent and are cuboid cavities, and the two cooling cavities are connected with the end face of the air inlet part 11 of the box body 1 through a liquid inlet end and a liquid discharge end.
Example 2
As shown in fig. 5-6, the box body 1 has a narrowing portion 12 which narrows along a straight line, 16 air holes are arranged in the box body 1, wherein the 16 air holes comprise 10 small holes 3 and 6 large holes 4, the large holes 4 are symmetrically arranged at two sides of the small holes 3 by taking 3 as a group, and are respectively communicated with two side surfaces of the narrowing portion 12, the diameter of the small holes 3 is 0.6cm, and the diameter of the large holes 4 is 0.8 cm; two cooling cavities 2 are arranged in the box body 1 and are positioned at the upper end and the lower end of the air hole, the shapes of the two cooling cavities 2 are consistent and are cylindrical cavities, and the two cooling cavities are connected with the end surface of the air inlet part 11 of the box body 1 through a liquid inlet end and a liquid discharge end.
Example 3
As shown in fig. 7-8, the box body 1 has a narrowing portion 12 that narrows along a straight line, and 30 air holes are arranged in the box body 1, wherein the air holes include 20 small holes 3 and 10 large holes 4, wherein 5 large holes 4 are symmetrically arranged on two sides of the small holes 3 and respectively communicated with two side surfaces of the narrowing portion 12, the diameter of the small holes 3 is 0.3cm, and the diameter of the large holes 4 is 0.45 cm; two cooling cavities 2 are arranged in the box body 1 and are positioned at the upper end and the lower end of the air hole, the shapes of the two cooling cavities 2 are consistent, the two cooling cavities are continuous S-shaped pipeline cavities, and the two cooling cavities are connected with the end face of the air inlet part 11 of the box body 1 through a liquid inlet end and a liquid discharge end.
In a second aspect, referring to fig. 9-10, fig. 9-10 illustrate a gas delivery assembly for an epitaxial furnace for delivering reactant gases to a reaction chamber of the epitaxial furnace, in some embodiments of the present application, the assembly comprising:
an inlet plate 5 for introducing a reaction gas;
the gas homogenizing box of the epitaxial furnace;
the air inlet side fixed connection of air inlet plate 5 and box body 1, air inlet plate 5 are equipped with air guide cavity 6 and connect in air guide cavity 6's air cock 7, and air guide cavity 6 and gas pocket intercommunication still are equipped with inlet 8 and leakage fluid dram 9 of being connected with cooling chamber 2 on the air inlet plate 5.
According to the gas conveying assembly of the epitaxial furnace, the original gas homogenizing plate with the plate-shaped structure is designed into the gas homogenizing box with the length of 10-30cm, the reaction gas from the gas inlet plate 5 is received and shunted by the gas holes in the gas homogenizing box, and the reaction gas is conveyed in the gas homogenizing box along the gas holes to form a plurality of reaction gas flows flowing in parallel, so that the reaction gas output by the gas homogenizing box is stable and is not disordered, and the crystal growth is more uniform; in addition, the air holes are arranged in a mode that the middle is small and the two sides are large, so that the flow velocity of the airflow at the two side edges is higher than that of the airflow at the two side edges guided by the traditional air guide cylinder, and the problem of poor temperature uniformity of the edge of the substrate is solved.
In some preferred embodiments, the air inlet plate 5 is provided with a mounting groove 10 for defining the mounting position of the box body 1, and the mounting groove 10 can ensure that the mounting position of the uniform air box is accurate, so that the reaction air flow can be accurately conveyed towards the substrate in the reaction chamber.
In some preferred embodiments, the gas inlet plate 5 is fixedly connected with the gas distribution box through a sealing screw, so as to prevent the reaction gas from leaking in the gas guide chamber 6.
In some preferred embodiments, screw holes for connecting the epitaxial furnace are further formed on two sides of the air inlet plate 5.
To sum up, the embodiment of the present application provides a gas homogenizing box and a gas conveying assembly of an epitaxial furnace, wherein, the length of the gas homogenizing box is 10-30cm, so that the reaction gas can be conveyed in the box body 1 along the gas holes to form a plurality of parallel flowing reaction gas flows, the reaction gas output by the gas homogenizing box is ensured to be stable and not disordered, the crystal growth is more uniform, meanwhile, the gas holes are arranged in a form with small middle and large two sides, the flow rate of the two side edge gas flows is higher than that of the two side edge gas flows guided by the traditional gas guide cylinders, and the problem of poor temperature uniformity of the substrate edge is solved.
In the description herein, references to the description of the terms "one embodiment," "certain embodiments," "an illustrative embodiment," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
The above description is only an example of the present application and is not intended to limit the scope of the present application, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.
Claims (10)
1. A unified gas box for an epitaxial furnace for delivering reaction gases toward a reaction chamber of the epitaxial furnace, comprising: the box body (1), box body (1) length is 10-30cm, be equipped with a plurality of gas pockets that set up along its length direction in box body (1), it is a plurality of the gas pocket includes a plurality of apertures (3) and a plurality of macropores (4), and a plurality of macropore (4) symmetry branch is located aperture (3) both sides.
2. The homogenizing box of an epitaxial furnace according to claim 1, characterized in that a plurality of small holes (3) are arranged in the middle of the box body (1) at equal intervals, and the large holes (4) on the same side of the small holes (3) are arranged at equal intervals.
3. The distribution box of the epitaxial furnace according to claim 2, wherein the box body (1) has a gas inlet end plane (14) and a gas outlet end plane (15) which are arranged at both ends of the length direction and are parallel to each other, both ends of the small hole (3) are respectively connected with the gas inlet end plane (14) and the gas outlet end plane (15), both sides of the box body (1) along the length direction are provided with inclined planes (16) which are inclined towards the middle part, and both ends of the large hole (4) are respectively connected with the gas inlet end plane (14) and the inclined planes (16).
4. The box of claim 3, wherein the ramp (16) is flat or curved.
5. The box of claim 2, wherein the arrangement pitch of the large holes (4) is larger than that of the small holes (3).
6. The gassing box of claim 2 wherein the caliber of said large hole (4) is 1.2 to 1.5 times the caliber of said small hole (3).
7. The box for homogenizing gas for an epitaxial furnace according to claim 1, characterized in that at least one cooling chamber (2) is arranged in the box body (1), and the cooling chamber (2) is used for introducing cooling liquid to adjust the temperature of the box body (1).
8. The box of claim 7, wherein the number of the cooling chambers (2) is two, and the cooling chambers are symmetrically arranged at the upper end and the lower end of the air hole.
9. The box of homogenizing gas for epitaxial furnaces according to claim 7, characterized in that the inlet and outlet ends of the cooling chamber (2) are located on the same side of the box (1).
10. A gas delivery assembly for an epitaxial furnace for delivering reactant gases toward a reaction chamber of the furnace, the assembly comprising:
an inlet plate (5) for introducing a reaction gas;
a gas distribution box of an epitaxial furnace according to any one of claims 1 to 9;
the air inlet plate (5) is fixedly connected with the air inlet side of the box body (1), the air inlet plate (5) is provided with an air guide cavity (6) and an air tap (7) connected with the air guide cavity (6), and the air guide cavity (6) is communicated with the air hole.
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| CN202111020536.6A CN113718333B (en) | 2021-09-01 | 2021-09-01 | Uniform gas box and gas conveying assembly of epitaxial furnace |
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| CN202111020536.6A CN113718333B (en) | 2021-09-01 | 2021-09-01 | Uniform gas box and gas conveying assembly of epitaxial furnace |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5275686A (en) * | 1991-09-25 | 1994-01-04 | University Of New Mexico | Radial epitaxial reactor for multiple wafer growth |
| US20010050051A1 (en) * | 1998-08-27 | 2001-12-13 | An-Chun Tu | Gas delivering device |
| CN109722652A (en) * | 2017-10-27 | 2019-05-07 | 台湾积体电路制造股份有限公司 | Chemical vapor depsotition equipment and associated method with Multi sectional thickness control |
| CN111341695A (en) * | 2018-12-13 | 2020-06-26 | 夏泰鑫半导体(青岛)有限公司 | Spray head for semiconductor manufacturing |
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2021
- 2021-09-01 CN CN202111020536.6A patent/CN113718333B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5275686A (en) * | 1991-09-25 | 1994-01-04 | University Of New Mexico | Radial epitaxial reactor for multiple wafer growth |
| US20010050051A1 (en) * | 1998-08-27 | 2001-12-13 | An-Chun Tu | Gas delivering device |
| CN109722652A (en) * | 2017-10-27 | 2019-05-07 | 台湾积体电路制造股份有限公司 | Chemical vapor depsotition equipment and associated method with Multi sectional thickness control |
| CN111341695A (en) * | 2018-12-13 | 2020-06-26 | 夏泰鑫半导体(青岛)有限公司 | Spray head for semiconductor manufacturing |
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| CN113718333B (en) | 2022-09-27 |
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