CN113711479A - Power conversion device - Google Patents
Power conversion device Download PDFInfo
- Publication number
- CN113711479A CN113711479A CN202080028774.9A CN202080028774A CN113711479A CN 113711479 A CN113711479 A CN 113711479A CN 202080028774 A CN202080028774 A CN 202080028774A CN 113711479 A CN113711479 A CN 113711479A
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- Prior art keywords
- temperature
- semiconductor element
- phase
- detected
- power conversion
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
- H02M1/327—Means for protecting converters other than automatic disconnection against abnormal temperatures
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
- H02M7/53871—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration with automatic control of output voltage or current
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Inverter Devices (AREA)
Abstract
In the power conversion device of the present invention, a temperature sensing diode (Td) is provided in the vicinity of a U-phase lower arm semiconductor element (Tul). The gate control circuit (131) outputs an ON signal to the gate resistor (Rg1) on the conduction side in response to a drive signal inputted from the microcomputer (151), thereby turning on the U-phase lower arm semiconductor element (Tul). The switching characteristics of the U-phase lower arm semiconductor element (Tul) are determined by the gate resistance composed of both the on-side gate resistance (Rg1) and the off-side gate resistance (Rg 2). The resistance value of the gate resistance for determining the switching characteristic of the U-phase lower arm semiconductor element (Tul) for which the temperature is detected by the temperature detection unit (14) is set to a value at which the heat generation due to the switching loss is larger than the gate resistance for determining the switching characteristic of the other semiconductor element for which the temperature is not detected.
Description
Technical Field
The present invention relates to a power conversion apparatus.
Background
The power conversion device has a semiconductor element for converting direct-current power into alternating-current power. As the semiconductor element, an IGBT (Insulated Gate Bipolar Transistor) or the like is used. A semiconductor element that switches a high voltage and a large current generates heat due to switching loss or the like. Therefore, a temperature detection element such as a temperature sensitive diode is provided near the semiconductor element to detect the temperature of the semiconductor element, and control is performed so that the semiconductor element does not exceed an allowable temperature. In the case of driving, for example, a three-phase motor, in the power conversion device, two semiconductor elements are used for each phase of the UVW phase, six semiconductor elements in total are used, and a plurality of temperature detection portions for the semiconductor elements of each phase are also required.
Patent document 1 describes a power converter including a temperature sensitive diode for detecting the temperature of one IGBT, and estimating the temperature of a semiconductor element whose temperature is not detected by calculation processing.
Documents of the prior art
Patent document
Patent document 1: japanese patent laid-open No. 2012-186968
Disclosure of Invention
Technical problem to be solved by the invention
The device described in patent document 1 has a problem that a complicated calculation process for estimating the temperature is required.
Technical scheme for solving technical problem
The power conversion device of the present invention includes: a power conversion circuit unit having a plurality of semiconductor elements that convert direct-current power into multiphase alternating-current power; and a temperature detection unit for detecting a temperature of the semiconductor element corresponding to any one of the phases of the multi-phase ac power, wherein the power conversion device drives the semiconductor element whose temperature is detected by the temperature detection unit such that heat generation due to switching loss is greater than that of the other semiconductor elements whose temperature is not detected.
Effects of the invention
According to the present invention, the temperature detection unit is provided at the minimum necessary, and complicated calculation processing for estimating the temperature and the like are not required.
Drawings
Fig. 1 is a circuit configuration diagram of a power conversion apparatus.
Fig. 2 is a circuit diagram showing a main part of the drive circuit section.
Fig. 3(a) and 3(B) are graphs showing the relationship between the motor current and the temperature and loss.
Detailed Description
[ embodiment 1]
Fig. 1 is a circuit configuration diagram of a power conversion apparatus 1.
The power conversion device 1 is configured by a circuit having a semiconductor element for converting a direct current into an alternating current. The power conversion device 1 controls the driving of the motor 3 by switching the on and off of the semiconductor elements to flow a desired current using the battery 2 as a power source. Then, the dc power and the ac power are converted between the battery 2 and the motor 3. The battery 2 and the power conversion device 1 are connected by a relay 4. The upper control unit 5 is connected to the power conversion device 1.
The power conversion device 1 includes a power conversion circuit section 10 for performing power conversion, a capacitor 11 for filtering a direct current, a drive power supply section 12, a drive circuit section 13, a temperature detection section 14, and a control section 15. Power is supplied from the external power supply 6 to the control unit 15.
The power conversion circuit unit 10 has an upper and lower arm series circuit of UVW phase. The U-phase upper and lower arm series circuit is composed of a U-phase upper arm semiconductor element Tuu and a U-phase upper arm diode Duu, a U-phase lower arm semiconductor element Tul, and a U-phase lower arm diode Dul. The V-phase upper and lower arm series circuit is composed of a V-phase upper arm semiconductor element Tvu and a V-phase upper arm diode Dvu, a V-phase lower arm semiconductor element Tvl and a V-phase lower arm diode Dvl. The W-phase upper and lower arm series circuit is composed of a W-phase upper arm semiconductor element Twu and a W-phase upper arm diode Dwu, a W-phase lower arm semiconductor element Twl, and a W-phase lower arm diode Dwl.
The drive power supply unit 12 is connected to the positive electrode bus bar P and the negative electrode bus bar N for power supply, incorporates a DC-AC converter, a transformer, and an AC-DC converter, and outputs power supply voltages Vuu, Vvu, Vwu, Vul, Vvl, and Vwl of a drive circuit for driving the semiconductor elements of each phase.
The drive circuit section 13 includes: a drive circuit Guu to which a power supply voltage Vuu is supplied and which controls on/off of the U-phase upper arm semiconductor element Tuu; a drive circuit Gvu to which a power supply voltage Vvu is supplied and which controls on/off of the V-phase upper arm semiconductor element Tvu; and a drive circuit Gwu to which the power supply voltage Vwu is supplied and which controls on/off of the W-phase upper arm semiconductor element Twu. The drive circuit section 13 further includes: a driver circuit Gul to which a power supply voltage Vul is supplied and which controls on/off of the U-phase lower arm semiconductor element Tul; a drive circuit Gvl to which a power supply voltage Vvl is supplied and which controls on/off of the V-phase lower arm semiconductor element Tvl; and a drive circuit Gwl to which the power supply voltage Vwl is supplied and which controls the on/off of the W-phase lower arm semiconductor element Twl.
The temperature detector 14 includes a temperature detection circuit 141 for detecting a temperature based on the temperature sensing diode Td. In the present embodiment, the temperature sensing diode Td is disposed in the vicinity of the U-phase lower arm semiconductor element Tul, and the temperature sensing diode is not disposed in the vicinity of the other semiconductor elements.
The control unit 15 includes a microcomputer 151, receives an input of a current value supplied to the motor 3 detected by the current sensor 16, and outputs drive signals to the drive circuits Guu to Gwl in response to a command value from the host control unit 5. Further, the temperature detected by the temperature detecting portion 14 is input to the control portion 15, and the control portion 15 performs control so that the semiconductor element does not exceed the allowable temperature.
Fig. 2 is a circuit diagram showing a main part of the drive circuit section 13.
As shown in fig. 2, the temperature sensing diode Td is disposed in the vicinity of the U-phase lower arm semiconductor element Tul. The temperature detector 14 includes a temperature detection circuit 141 for detecting a temperature based on the temperature sensing diode Td, and the detected temperature is input to the microcomputer 151.
The microcomputer 151 outputs a drive signal to the drive circuit Gul. The driving circuit Gul includes a gate control circuit 131, an on-side gate resistor Rg1, an off-side gate resistor Rg2, and a gate-emitter capacitor Cge. The gate control circuit 131 and the temperature detection circuit 141 are supplied with the power supply voltage Vul from the driving power supply unit 12 as a driving power supply.
The gate control circuit 131 outputs an on signal to the turn-on side gate resistor Rg1 in response to a drive signal input from the microcomputer 151, thereby turning on the U-phase lower arm semiconductor element Tul. The gate control circuit 131 outputs a zero potential to the off-side gate resistance Rg 2.
Fig. 2 shows a drive circuit Gul for driving the U-phase lower arm semiconductor device Tul, and the drive circuits Guu and Gvu to Gwl of the other phases have the same configuration. However, in the present embodiment, as will be described later, the resistance values of the on-side gate resistor Rg1 and the off-side gate resistor Rg2 of the drive circuit Gul are different from the resistance values of the drive circuits Guu and Gvu to Gwl of the other phases. The capacitances of the capacitors Cge of the respective phases are all the same value.
The switching characteristics of the U-phase lower arm semiconductor element Tul are determined by the gate resistance formed by the on-side gate resistance Rg1 and the off-side gate resistance Rg 2. When the resistance value of the gate resistance is increased, the switching loss of the U-phase lower arm semiconductor element Tul increases, but the peak value of the surge voltage generated by switching decreases. In general, the resistance value of the gate resistor is set to minimize the switching loss in a range where the surge voltage does not exceed the rated voltage of the semiconductor element. In the present embodiment, the resistance value of the gate resistance for determining the switching characteristic of the U-phase lower arm semiconductor device Tul whose temperature is detected by the temperature detection unit 14 is set to a value that increases the heat generation due to the switching loss compared to the gate resistance for determining the switching characteristic of the other semiconductor device whose temperature is not detected. That is, the gate resistance of the U-phase lower arm semiconductor element Tul is increased to be higher than the temperature of the semiconductor element of the other phase, so that a phase with an increased switching loss is intentionally produced, and the temperature of the phase is detected.
The switching loss of the phase subjected to temperature detection is set in consideration of the deviation of temperature detection so that the minimum temperature value of the phase subjected to temperature detection is larger than the maximum temperature value of the phase not subjected to temperature detection.
It is considered that the cooling efficiency in the structure, the characteristics of the semiconductor element, and the characteristics of the temperature detection circuit are main factors causing the temperature detection deviation. Therefore, for example, when the temperature deviation is ± 10%, the switching loss of the phase for which the temperature detection is performed is increased, so that the temperature rises by + 20% or more.
Fig. 3(a) and 3(B) are graphs showing relationships among motor current, temperature, and loss when the present embodiment is applied.
In fig. 3(a), the motor current is shown on the horizontal axis, and the temperature is shown on the vertical axis. When the gate resistance of the U-phase lower arm semiconductor element Tul is increased so that its temperature becomes higher than that of the semiconductor element of the other phase, its temperature becomes higher than that of the other phase, for example, the W-phase. The temperature difference thereof increases in proportion to the magnitude of the motor current.
In fig. 3(B), the motor current is shown on the horizontal axis, and the loss is shown on the vertical axis. When the gate resistance of the U-phase lower arm semiconductor element Tul is increased to make the temperature higher than that of the semiconductor element of the other phase, the loss is higher than that of the other phase, for example, the W-phase. The loss difference thereof increases in proportion to the magnitude of the motor current.
According to the present embodiment, by detecting the temperature of the semiconductor element of the specific phase, it is possible to realize the over-temperature protection of the semiconductor element including the other phase at low cost while maintaining the reliability.
[ embodiment 2]
Next, embodiment 2 will be explained. The circuit configuration diagram of the power converter shown in fig. 1, the circuit configuration diagram of the drive circuit and the temperature detection unit shown in fig. 2, and the graphs of the temperature and loss of the U-phase and V-phase shown in fig. 3 are also the same in the present embodiment.
In the present embodiment, the capacitance of the capacitor Cge in the phase in which temperature detection is performed is set to be larger than the capacitance of the capacitor Cge in the other phase in which temperature detection is not performed, with respect to the capacitor Cge between the gate and the emitter shown in fig. 2. That is, the capacitance of the capacitor Cge is increased so that the temperature of the U-phase lower arm semiconductor element Tul becomes higher than the temperature of the semiconductor elements of the other phases, whereby a phase with increased switching loss is intentionally produced, and the temperature of the phase is detected. The gate resistances of the respective phases have the same resistance value.
In consideration of the variation in temperature detection, the switching loss of the phase subjected to temperature detection is set so that the minimum temperature value of the phase subjected to temperature detection is larger than the maximum temperature value of the phase not subjected to temperature detection.
It is considered that the cooling efficiency in the structure, the characteristics of the semiconductor element, and the characteristics of the temperature detection circuit are main factors of the temperature detection deviation. Therefore, for example, when the temperature deviation is ± 10%, the switching loss of the phase for which the temperature detection is performed is increased, so that the temperature rises by + 20% or more.
According to the present embodiment, by detecting the temperature of the semiconductor element of the specific phase, it is possible to realize the over-temperature protection of the semiconductor element including the other phase at low cost while maintaining the reliability.
[ embodiment 3]
Next, embodiment 3 will be explained. The circuit configuration diagram of the power converter shown in fig. 1, the circuit configuration diagram of the drive circuit and the temperature detection unit shown in fig. 2, and the graphs of the temperature and loss of the U-phase and V-phase shown in fig. 3 are also the same in the present embodiment.
In the present embodiment, the power supply voltage Vul supplied from the drive power supply unit 12 shown in fig. 1 to the drive circuit Gul is set to a voltage lower than the power supply voltages Vuu, Vvu, Vwu, Vvl, Vwl supplied to other drive circuits. By lowering the voltage, the switching loss using the gate resistance made up of the on-side gate resistance Rg1 and the off-side gate resistance Rg2 increases. That is, the drive circuit Gul is driven at a low voltage so that the temperature of the U-phase lower arm semiconductor element Tul is higher than the temperature of the semiconductor elements of the other phases, whereby a phase in which the switching loss is increased is intentionally produced, and the temperature of the phase is detected. The resistance value of the gate resistor and the capacitance of the capacitor Cge of each phase are the same.
In consideration of the variation in temperature detection, the switching loss of the phase subjected to temperature detection is set so that the minimum temperature value of the phase subjected to temperature detection is larger than the maximum temperature value of the phase not subjected to temperature detection.
It is considered that the cooling efficiency in the structure, the characteristics of the semiconductor element, and the characteristics of the temperature detection circuit are main factors of the temperature detection deviation. Therefore, for example, when the temperature deviation is ± 10%, the switching loss of the phase for which the temperature detection is performed is increased, so that the temperature rises by + 20% or more.
According to the present embodiment, by detecting the temperature of the semiconductor element of the specific phase, it is possible to realize the over-temperature protection of the semiconductor element including the other phase at low cost while maintaining the reliability.
According to the above-described embodiments, the following operational effects can be obtained.
(1) The power conversion apparatus 1 includes: a power conversion circuit unit 10 having a plurality of semiconductor elements for converting dc power into multiphase ac power; and a temperature detection unit 14 for detecting the temperature of the semiconductor element corresponding to any one phase of the multiphase ac power, wherein the power conversion device 1 drives the semiconductor element whose temperature is detected by the temperature detection unit 14 so that the heat generation due to the switching loss is larger than that of the other semiconductor elements whose temperature is not detected. Thus, the temperature detection unit is provided at the minimum necessary, and a complicated calculation process for estimating the temperature is not required.
(modification example)
The present invention can be implemented by modifying the above-described embodiments 1 to 3 as follows.
(1) In each embodiment, an example in which the temperature is detected for a specific one phase is described, but the temperature may be detected for a specific plurality of phases. In this case, control is performed so as not to exceed the allowable temperature based on the temperature of the higher one of the detected temperatures.
(2) The power conversion circuit units according to the respective embodiments have been described as examples applied to three phases, i.e., UVW phases, but the power conversion circuit units are not limited to three phases and may be applied to multiple phases.
The present invention is not limited to the above-described embodiments, and other embodiments that can be considered within the scope of the technical idea of the present invention are also included within the scope of the present invention as long as the features of the present invention are not impaired. Further, the above embodiment and a plurality of modifications may be combined.
Description of the reference symbols
1 power conversion device
2 batteries
3 electric motor
4 Relay
5 Upper control part
6 external power supply
10 power conversion circuit part
11 capacitor
12 drive power supply unit
13 drive circuit part
14 temperature detecting part
15 control part
16 current sensor
131 grid control circuit
141 temperature detection circuit
151 microcomputer
Tuu-phase upper arm semiconductor device
Tu 1U-phase lower arm semiconductor element
Tvu V-phase upper arm semiconductor device
Tv 1V phase lower arm semiconductor element
Twu W-phase upper arm semiconductor device
Tw 1W phase lower arm semiconductor element
Duu U phase upper arm diode
Du 1U-phase lower arm diode
Dvu V phase upper arm diode
Dv 1V phase lower arm diode
Dwu W-phase upper arm diode
Dw 1W phase lower arm diode
Capacitor between Cge gate and emitter
Td temperature sensing diode
Rg1 conducting side gate resistor
Rg2 off-side gate resistor
Guu, Gvu, Gwu, Gul, Gvl, Gwl driver circuits.
Claims (4)
1. A power conversion apparatus, comprising:
a power conversion circuit unit having a plurality of semiconductor elements that convert direct-current power into multiphase alternating-current power; and
a temperature detection unit for detecting a temperature of the semiconductor element corresponding to any one of the phases of the multiphase AC power,
the semiconductor element whose temperature is detected by the temperature detection unit is driven so that heat generation due to switching loss becomes larger than that of the other semiconductor elements whose temperature is not detected.
2. The power conversion apparatus according to claim 1,
the gate resistance for determining the switching characteristic of the semiconductor element whose temperature is detected by the temperature detection unit is set to a value at which heat generation due to switching loss is larger than the gate resistance for determining the switching characteristic of the other semiconductor element whose temperature is not detected.
3. The power conversion apparatus according to claim 1,
the capacitance between the gate and the emitter of the semiconductor element for which the temperature is detected by the temperature detection unit is set to a value at which switching loss is larger than the capacitance between the gate and the emitter of the other semiconductor element for which the temperature is not detected.
4. The power conversion apparatus according to claim 1,
the driving voltage of the driving circuit of the semiconductor element whose temperature is detected by the temperature detection unit is set to a value lower than the driving voltage of the driving circuit of the other semiconductor element whose temperature is not detected.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019-078469 | 2019-04-17 | ||
| JP2019078469 | 2019-04-17 | ||
| PCT/JP2020/011015 WO2020213317A1 (en) | 2019-04-17 | 2020-03-13 | Power conversion device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113711479A true CN113711479A (en) | 2021-11-26 |
Family
ID=72836818
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202080028774.9A Pending CN113711479A (en) | 2019-04-17 | 2020-03-13 | Power conversion device |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP7167319B2 (en) |
| CN (1) | CN113711479A (en) |
| DE (1) | DE112020001279T5 (en) |
| WO (1) | WO2020213317A1 (en) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008206345A (en) * | 2007-02-21 | 2008-09-04 | Denso Corp | Power converter |
| JP5482694B2 (en) | 2011-03-08 | 2014-05-07 | 株式会社デンソー | Power converter |
| JP6522232B2 (en) * | 2016-03-29 | 2019-05-29 | 三菱電機株式会社 | Overheat protection control device and power circuit device for vehicle |
-
2020
- 2020-03-13 JP JP2021514831A patent/JP7167319B2/en active Active
- 2020-03-13 CN CN202080028774.9A patent/CN113711479A/en active Pending
- 2020-03-13 WO PCT/JP2020/011015 patent/WO2020213317A1/en active Application Filing
- 2020-03-13 DE DE112020001279.4T patent/DE112020001279T5/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| WO2020213317A1 (en) | 2020-10-22 |
| JP7167319B2 (en) | 2022-11-08 |
| JPWO2020213317A1 (en) | 2020-10-22 |
| DE112020001279T5 (en) | 2021-12-02 |
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