CN113707774B

CN113707774B - Heterostructure and light emitting device employing the same

Info

Publication number: CN113707774B
Application number: CN202110995873.0A
Authority: CN
Inventors: 张剑平; 高英; 周瓴
Original assignee: Bolb Inc
Current assignee: Bolb Inc
Priority date: 2019-03-06
Filing date: 2020-02-12
Publication date: 2022-06-14
Anticipated expiration: 2040-02-12
Also published as: CN113707775B; CN113707775A; CN113707773A; CN111668351B; CN113707774A; CN111668351A; CN113707773B

Abstract

Heterostructures comprising one or more thin layers of positive charge or comprising alternating stacks of AlGaN barriers and AlGaN potential wells having a particular thickness are provided. A multiple quantum well structure and a p-type contact are also provided. The heterostructure, multiple quantum well structure and p-type contact are useful in light emitting devices and photodetectors.

Description

Heterostructure and light emitting device employing the same

Technical Field

The present disclosure relates generally to semiconductor light emitting technology, and more particularly to heterostructures for light emitting devices or photodetectors, and to light emitting devices and photodetectors having heterostructures.

Background

Nitride semiconductors such as InN, GaN, AlN, and ternary and quaternary alloys thereof depending on the alloy composition, may achieve Ultraviolet (UV) radiation from 410nm to about 200 nm. These include UVA (400-315nm) radiation, UVB (315-280nm) radiation and part of UVC (280-200nm) radiation. UVA radiation has triggered a revolution in the curing industry, and UVB and UVC radiation are expected to be commonly used in the food, water and surface disinfection industries due to their germicidal effects. UV light emitters made of nitride have inherent advantages compared to conventional UV light sources such as mercury lamps. In general, nitride UV emitters are robust, compact, spectrally tunable, and environmentally friendly. Which provides high UV light intensity to facilitate the desired disinfection/sterilization of water, air, food and object surfaces. Further, the light output of nitride UV light emitters can be intensity modulated at high frequencies up to several hundred megahertz, ensuring their ability to serve as innovative light sources for internet of things, covert communications, and biochemical detection.

Existing UVC Light Emitting Diodes (LEDs) typically employ a laminate structure comprising c-plane sapphire or AlN as a UV transparent substrate, an AlN layer coated on the substrate to act as an epitaxial template, and a set of AlN/AlGaN superlattices for dislocation and strain management. AlN/AlGaN superlattices and/or AlN templates enable high quality, high conductivity n-type AlGaN structures to be grown as electron supply layers to inject electrons into subsequent AlGaN based Multiple Quantum Well (MQW) active regions. On the other side of the MQW active region is a p-type AlGaN structure comprising a p-type AlGaN layer for electron blocking, hole injection, hole supply, and p-type ohmic contact formation. Conventional AlGaN UV LED structures can be found in the literature references (e.g., "Milliwatt power deep ultraviolet light-emitting diodes over sapphire with emission at 278 nm", j.p. zhang, et al, APPLIED PHYSICS LETTERS 81, 4910(2002), the contents of which are incorporated herein by reference in their entirety).

As can be seen, UVC LEDs can utilize many AlGaN layers with different Al compositions to form an AlGaN heterostructure in order to achieve certain functionality. The most important functionality is conductivity, which becomes more and more challenging for Al-rich AlGaN materials, because the activation energy of the donor and acceptor increases with increasing Al composition, resulting in a lack of free electron and hole carriers. A semiconductor superlattice is a special type of semiconductor heterostructure that is periodically formed byAlternately stacking at least two semiconductors with different band gaps and taking advantage of conduction band and valence band edge discontinuities can enhance the activation of dopants to improve conductivity (see, e.g., "Enhancement of deep absorption in semiconductor by super lattice doping", e.g., e.f. schubert, w.grieshaber and i.d. goepfert, appl.phys.lett.69, 9 (1996)). P-type Al has been proposed_xGa_1-xN/Al_yGa_1-yThe N superlattice replaces the conventional p-type AlGaN layer to improve conductivity (e.g., U.S. patent nos. 5,831, 277, 6,104, 039 and 8,426,225, the contents of which are incorporated herein by reference in their entirety).

The present invention discloses design rules for AlGaN heterostructures with improved conductivity and quantum confinement with respect to dopant concentration and interface charge density.

Disclosure of Invention

A first aspect of the present invention provides a heterostructure for a light emitting device or photodetector, comprising one or more p-doped AlGaN layers, each of said one or more p-doped AlGaN layers comprising one or more thin layers of positive charge inserted therein, wherein a distance between two adjacent thin layers of positive charge is greater than a depletion depth of a depletion region created by any of said two adjacent thin layers of positive charge.

Optionally, the depletion depth of the depletion region generated by any of the one or more thin layers of positive charge is less than 10 nm.

The one or more thin positively charged layers may be formed by Si delta-doping with a thin layer doping density of 1 x 10¹¹–1×10¹³cm^-2。

The p-doped AlGaN layer that is placed closest to the active region of the light emitting device or photodetector may contain a more thin layer of positive charge, a higher Al composition and a greater thickness than the remaining layers of the one or more p-doped AlGaN layers.

The heterostructure may further comprise: a plurality of p-type doped AlGaN layers containing no positively charged thin layers therein, alternately stacked with said one or more p-type doped AlGaN layers containing one or more positively charged thin layers; wherein each of the plurality of p-type doped AlGaN layers which does not contain a thin layer of positive charge has an Al composition higher than that of an adjacent p-type doped AlGaN layer which contains one or more thin layers of positive charge, or each of the plurality of p-type doped AlGaN layers which does not contain a thin layer of positive charge has an Al composition lower than that of an adjacent p-type doped AlGaN layer which contains one or more thin layers of positive charge.

Optionally, the thin positively charged layer divides each of said one or more p-type doped AlGaN layers comprising one or more thin positively charged layers into a thinner front region (prior zone) and a thicker back region (post zone).

The heterostructure can further comprise another p-doped AlGaN layer on which said one or more p-doped AlGaN layers are formed, wherein said another p-doped AlGaN layer has an Al composition in the range of 0.6-0.8 and a thickness in the range of 1.0-5.0 nm.

A second aspect of the present invention provides a heterostructure for a light emitting device or photodetector, comprising alternately stacked p-type doped AlGaN barriers and p-type doped AlGaN potential wells, wherein each of the AlGaN barriers and the AlGaN potential wells has a thickness satisfying:

wherein h is_iIs the thickness of the ith AlGaN barrier or potential well; sigma_iIs the sheet charge density of a thin layer of charge on a surface of the ith AlGaN barrier or well that is oppositely charged relative to the net active dopant band in the ith AlGaN barrier or well; and ρ_0i＝eN_Di-eN_AiIs the maximum bulk charge density allowed by the applied doping concentration, N, in the depletion region of the i-th AlGaN barrier or well created by the charge sheet_DiAnd N_AiThe donor and acceptor concentrations in the ith AlGaN barrier or potential well, respectively, and e is the basic charge level.

Optionally, at least one of the AlGaN barriers includes an AlGaN front barrier isolation layer (prior-barrier spacer), an AlGaN rear barrier isolation layer (post-barrier spacer), and an AlGaN main barrier (main barrier) interposed between the AlGaN front barrier isolation layer and the AlGaN rear barrier isolation layer, wherein an Al composition of the AlGaN front barrier isolation layer and an Al composition of the AlGaN rear barrier isolation layer are different from an Al composition of the AlGaN main barrier, and a thickness of the AlGaN front barrier isolation layer and a thickness of the AlGaN rear barrier isolation layer are smaller than a thickness of the AlGaN main barrier.

Optionally, a thickness of the AlGaN front barrier isolation layer and a thickness of the AlGaN rear barrier isolation layer are in a range of 0.1nm to 1.5 nm.

Optionally, the Al composition of the AlGaN front barrier isolation layer and the Al composition of the AlGaN rear barrier isolation layer are higher than the Al composition of the AlGaN main barrier.

Optionally, the AlGaN front barrier spacer and the AlGaN rear barrier spacer are made of AlN and have thicknesses in the range of 0.26-0.52nm, respectively.

Optionally, the Al composition of the AlGaN front barrier isolation layer and the Al composition of the AlGaN rear barrier isolation layer are lower than the Al composition of the adjacent AlGaN potential well.

Optionally, the AlGaN front barrier spacer and the AlGaN rear barrier spacer are made of GaN and have thicknesses in a range of 0.1-0.52nm, respectively.

Optionally, the Al composition of the AlGaN front barrier isolation layer is higher than the Al composition of the AlGaN main barrier, and the Al composition of the AlGaN rear barrier isolation layer is lower than the Al composition of the adjacent AlGaN potential well; or the Al component of the AlGaN back barrier isolation layer is higher than that of the AlGaN main barrier, and the Al component of the AlGaN front barrier isolation layer is lower than that of the adjacent AlGaN potential well.

The heterostructure can further include another p-doped AlGaN barrier formed over the alternately stacked p-doped AlGaN barrier and p-doped AlGaN potential well, wherein the another p-doped AlGaN barrier comprises: a main barrier contacting a last quantum barrier of the MQW active region of the light emitting device or the photodetector, and a back barrier isolation layer on which one of the alternately stacked p-type doped AlGaN barrier and p-type doped AlGaN potential well is formed.

A third aspect of the present invention provides a multiple quantum well structure for a light emitting device or a photodetector, comprising AlGaN barriers and AlGaN potential wells alternately stacked, wherein each of the AlGaN barriers and the AlGaN potential wells has a thickness satisfying:

wherein h is_iIs the thickness of the ith AlGaN barrier or potential well; sigma_iIs the sheet charge density of a thin layer of charge on a surface of the ith AlGaN barrier or well that is oppositely charged relative to the net active dopant band in the ith AlGaN barrier or well; and ρ_0i＝eN_Di-eN_AiMaximum bulk charge density, allowed by the applied doping concentration, N in the depletion region of the i-th AlGaN barrier or well created by the charge sheet_DiAnd N_AiThe donor and acceptor concentrations in the ith AlGaN barrier or potential well, respectively, and e is the basic charge capacity.

Optionally, one or more of the AlGaN potential wells include an n-type doped AlGaN front well isolation layer (prior-well spacer), an n-type doped AlGaN rear well isolation layer (post-well spacer), and an AlGaN main potential well (main well) sandwiched between the n-type doped AlGaN front well isolation layer and the n-type doped AlGaN rear well isolation layer, where an Al component of the n-type doped AlGaN front well isolation layer and an Al component of the n-type doped AlGaN rear well isolation layer are different from an Al component of the AlGaN main potential well, and a thickness of the n-type doped AlGaN front well isolation layer and a thickness of the n-type doped AlGaN rear well isolation layer are smaller than a thickness of the AlGaN main potential well and a thickness of an adjacent AlGaN potential well.

Optionally, the n-type doped AlGaN front well isolation layer and the n-type doped AlGaN rear well isolation layer are doped with Si respectively, and the doping concentration thereof is 1.0-8.0 × 10¹⁸cm^-3AlGaN main potential well is undoped or doped with Si at a doping concentration of less than 5.0 x 10¹⁷

cm

^-3, at least one of the AlGaN barriers is doped with Si at a doping concentration of 1.0 to 8.0 x 10¹⁸cm^-3。

Optionally, the thickness of the n-type doped AlGaN front well isolation layer and the thickness of the n-type doped AlGaN back well isolation layer are respectively in the range of 0.1nm to 0.52 nm.

Optionally, the Al composition of the n-type doped AlGaN front well isolation layer and the Al composition of the n-type doped AlGaN back well isolation layer are higher than the Al composition of the adjacent AlGaN barrier.

Optionally, the n-type doped AlGaN front well isolation layer and the n-type doped AlGaN back well isolation layer are made of AlN and have thicknesses in a range of 0.1 to 0.52nm, respectively.

Optionally, the Al composition of the n-type doped AlGaN front well isolation layer and the Al composition of the n-type doped AlGaN back well isolation layer are lower than the Al composition of the AlGaN main potential well.

Optionally, the n-type doped AlGaN front well isolation layer and the n-type doped AlGaN rear well isolation layer are made of GaN and have thicknesses in a range of 0.1 to 0.52nm, respectively.

Optionally, the Al composition of the n-type doped front well isolation layer is higher than the Al composition of the adjacent AlGaN barrier, and the Al composition of the n-type doped AlGaN rear well isolation layer is lower than the Al composition of the AlGaN main potential well; or the Al component of the n-type doped AlGaN rear well isolation layer is higher than that of the AlGaN barrier, and the Al component of the AlGaN front well isolation layer is lower than that of the AlGaN main potential well.

Alternatively, one of the n-type doped AlGaN front well isolation layer and the n-type doped AlGaN back well isolation layer is made of AlN and the other is made of GaN, and the thicknesses are respectively in the range of 0.1-0.52 nm.

The multi-quantum well structure may further include an undoped AlGaN barrier formed on one of the AlGaN potential wells on one side and in contact with the p-type structure of the light emitting device or photodetector on the other side.

Optionally, one or more of the AlGaN barriers comprise one or more thin layers of positive charge, and a distance between two adjacent thin layers of positive charge is larger than a depletion depth of a depletion region generated by any one of the two adjacent thin layers of positive charge.

Alternatively, the thin positively charged layer is formed by Si delta-doping with a thin layer doping density equal to or greater than 10¹²cm^-2。

Optionally, each AlGaN barrier including a thin layer of positive charge includes a doping concentration of 1.0-8.0 × 10¹⁸cm^-3And an undoped layer separated by a thin layer of positive charge.

Alternatively, the thickness of the Si doped layer of each AlGaN barrier including the thin layer of positive charges is in the range of 6-10nm, respectively, and the thickness of the undoped layer of each AlGaN barrier including the thin layer of positive charges is in the range of 2-4nm, respectively.

Optionally, one or more of the AlGaN potential wells include an n-type doped AlGaN front well isolation layer, an n-type doped AlGaN rear well isolation layer, and an AlGaN main potential well sandwiched between the n-type doped AlGaN front well isolation layer and the n-type doped AlGaN rear well isolation layer, where an Al component of the n-type doped AlGaN front well isolation layer and an Al component of the n-type doped AlGaN rear well isolation layer are different from an Al component of the AlGaN main potential well, and a thickness of the n-type doped AlGaN front well isolation layer and a thickness of the n-type doped AlGaN rear well isolation layer are smaller than a thickness of the AlGaN main potential well and a thickness of an adjacent AlGaN potential well.

Optionally, the n-type doped AlGaN front well isolation layer and the n-type doped AlGaN rear well isolation layer are doped with Si with a doping concentration of 1.0 × 10¹⁸-8.0×10¹⁸cm^-3AlGaN main potential well is undoped or doped with Si at a doping concentration of less than 5.0 x 10¹⁷cm^-3At least one of the AlGaN barriers is doped with Si at a doping concentration of 1.0 x 10¹⁸-8.0×10¹⁸cm^-3。

A fourth aspect of the present invention provides a heterostructure for a light emitting device or photodetector, comprising an alternately stacked n-type doped Al_bGa_1-bN-barrier and N-type doped Al_wGa_1-wN-well, wherein the N-type is doped with Al_bGa_1-bN-barrier and N-type doped Al_wGa_1-wThe thickness of each of the N-well respectively satisfies:

wherein L is_iIs the ith Al_bGa_1-bN-barrier or Al_wGa_1-wThickness of N well, N_DiIs the ith Al_bGa_1-bN barrier or Al_wGa_1-wDonor concentration (in cm) of N-well^-3In units).

Optionally, n-type doped Al_bGa_1-bN-barrier and N-type doped Al_wGa_1-wThe N-well is doped with Si at a doping concentration of 8.0X 10¹⁸–2.0×10¹⁹cm^-3And b-w is equal to or greater than 0.15.

Optionally, the n-type is doped with Al_bGa_1-bOne or more of the N barriers comprises a Si delta-doped region.

Optionally, doping at least one n-type with Al_bGa_1-bAn N-type doped AlGaN front barrier isolation layer and an N-type doped AlGaN rear barrier isolation layer are respectively formed on two sides of the N barrier, wherein the Al component and the N-type doped AlGaN front barrier isolation layer are respectively doped with the Al component and the N-type doped with the Al componentThe Al composition of the hetero AlGaN back barrier isolation layer is different from that of the at least one n-type doped Al_bGa_1-bThe Al component of the N barrier, and the thickness of the N-type doped AlGaN front barrier isolation layer and the thickness of the N-type doped AlGaN rear barrier isolation layer are less than that of the at least one N-type doped Al_bGa_1-bThe thickness of the N-barrier.

Optionally, the thickness of the n-type doped AlGaN front barrier spacer layer and the thickness of the n-type doped AlGaN rear barrier spacer layer are in a range of 0.1nm to 1.5 nm.

Optionally, the Al composition of the n-doped AlGaN front barrier isolation layer and the Al composition of the AlGaN rear barrier isolation layer are higher than the at least one n-doped Al_bGa_1-bAl composition of N barrier.

Optionally, the Al composition of the AlGaN front barrier isolation layer and the Al composition of the AlGaN rear barrier isolation layer are lower than that of the adjacent n-type doped Al_wGa_1-wAl composition of N-well.

Optionally, the AlGaN front barrier separation layer has an Al composition higher than that of the at least one n-type doped Al_bGa_1-bThe Al component of the N barrier layer and the Al component of the AlGaN back barrier isolation layer are lower than those of the adjacent N-type doped Al_wGa_1-wAn Al component of the N-well; or the Al component of the AlGaN back barrier isolating layer is higher than that of the at least one n-type doped Al_bGa_1-bThe Al component of the N barrier, and the Al component of the AlGaN front barrier separation layer is lower than that of the adjacent N-type doped Al_wGa_1-wAl composition of N-well.

A fifth aspect of the present invention provides a p-type contact structure for a light emitting device or a photodetector, comprising:

a first AlGaN barrier;

a first AlInGaN well formed on the first AlGaN barrier;

a second AlGaN barrier formed on the first AlInGaN well; and the number of the first and second groups,

a second AlInGaN well formed on the second AlGaN barrier;

wherein a difference between an Al composition of the first AlGaN barrier and an Al composition of the first AlInGaN well is equal to or greater than 0.6, and a difference between an Al composition of the second AlGaN barrier and an Al composition of the second AlInGaN well is equal to or greater than 0.6.

Optionally, at least one of the first AlGaN barrier and the second AlGaN barrier is made of AlN.

Optionally, at least one of the first AlInGaN well and the second AlInGaN well is formed from In_xGa_1-xN, wherein x is equal to or less than 0.3.

Optionally, the thickness of the first AlGaN barrier and the thickness of the second AlGaN barrier are respectively in the range of 0.26-2.0 nm.

Optionally, the thickness of the first AlInGaN well and the thickness of the second AlInGaN well are each in the range of 0.52-3.0 nm.

Optionally, the first AlInGaN well is p-type doped with a doping concentration of 5.0 × 10¹⁹–3.0×10²⁰cm^-3And the second AlInGaN well is n-type doped with a doping concentration of 1.0 × 10¹⁹–1.5×10²⁰cm^-3。

Optionally, the first AlGaN barrier is doped p-type with a doping concentration of 5.0 × 10¹⁹–3.0×10²⁰cm^-3And the second AlGaN barrier is doped p-type with a doping concentration of 5.0 × 10¹⁹–3.0×10²⁰cm^-3。

The p-type contact structure may further include an AlGaN layer on which the first AlGaN barrier is formed, wherein the AlGaN layer on which the first AlGaN barrier is formed has an Al composition lower than that of the first AlGaN barrier and is in a range of 0.5 to 0.65, has a thickness in a range of 2.0 to 5.0nm, and is p-type doped with a doping concentration of 5.0 × 10¹⁹–3.0×10²⁰cm^-3。

A sixth aspect of the present invention provides a light emitting device:

a light emitting device includes:

an n-type AlGaN structure;

a p-type AlGaN structure; and the number of the first and second groups,

an active region sandwiched between the n-type AlGaN structure and the p-type AlGaN structure,

wherein the p-type AlGaN structure comprises a heterostructure according to the first aspect of the present invention.

A light emitting device includes:

an n-type AlGaN structure;

a p-type AlGaN structure; and the number of the first and second groups,

wherein the p-type AlGaN structure comprises a heterostructure according to the second aspect of the present invention.

A light emitting device includes:

an n-type AlGaN structure;

a p-type AlGaN structure; and the number of the first and second groups,

wherein the active region comprises a multi-quantum well structure according to the third aspect of the invention.

A light emitting device includes:

an n-type AlGaN structure;

a p-type AlGaN structure; and (c) a second step of,

wherein the n-type AlGaN structure comprises a heterostructure according to the fourth aspect of the present invention.

A light emitting device includes:

an n-type AlGaN structure;

a p-type AlGaN structure;

an active region sandwiched between the n-type AlGaN structure and the p-type AlGaN structure; and the number of the first and second groups,

a p-type contact structure according to a fifth aspect of the present invention formed on the p-type AlGaN structure.

The heterostructure, multiple quantum well structure and p-type contact structure according to the above first to fifth aspects of the present invention may be applied to any suitable light emitting device or photodetector, either individually or in any combination thereof.

Drawings

The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the application and together with the description serve to explain the principle of the application. Throughout the drawings, where like reference numerals refer to like elements, a layer may refer to a group of layers that are associated with the same function.

Figure 1 shows a thin layer of positive charge inserted into a thick p-type doped semiconductor (via n-type delta doping);

FIG. 2 shows a p-type doped heterostructure with a thin layer of opposite charges generated by polarization discontinuities;

fig. 3A plots a thin layer of positive charge inserted into a p-type semiconductor with different activated dopant levels (σ 10)¹³e.cm^-2) The surrounding potential profile;

FIG. 3B plots the absolute value of the maximum potential drop generated by a thin layer of positive charge inserted into a p-type semiconductor with different activated dopant levels;

FIG. 4 plots depletion depth curves for different sheet charge densities and activated dopant levels;

FIG. 5A schematically shows Al in full relaxation_yGa_1-yFull strain Al grown on N thick template_xGa_1-xThe interface of the N thin film polarizes the thin charge;

FIG. 5B plots the full relaxed Al at thickness_yGa_1-yAl grown in full strain on N template_xGa_1-xThe charge density of the polarized thin layer obtained by the calculation of the N thin film is less than or equal to x;

FIG. 5C plots the thickness of fully relaxed Al_yGa_1-yAl grown in full strain on N template_xGa_1-xThe charge density of the polarized thin layer is obtained by calculation of the N thin film, wherein y is more than or equal to x;

FIG. 6A schematically shows In fully relaxed_yGa_1-yFull strain In grown on N thick template_xGa_1-xThe interface of the N thin film polarizes the thin charge;

FIG. 6B plots the total relaxed In at thickness_yGa_1-yIn grown fully strained on N template_xGa_1-xThe charge density of the polarized thin layer obtained by the calculation of the N thin film is less than or equal to x;

FIG. 6C plots the total relaxed In at thickness_yGa_1-yIn grown fully strained on N template_xGa_1-xThe charge density of the polarized thin layer is obtained by calculation of the N thin film, wherein y is more than or equal to x;

FIG. 7 shows a cross-sectional view of an LED according to an embodiment of the invention;

FIG. 8 illustrates a cross-sectional view of a p-type AlGaN structure according to an embodiment of the present invention;

FIG. 9A illustrates one possible combination of dopant and composition profiles for the p-type AlGaN structure illustrated in FIG. 8;

FIG. 9B shows a band diagram of the p-type AlGaN structure shown in FIG. 9A;

FIG. 10 illustrates a cross-sectional view of a p-type AlGaN structure according to another embodiment of the present invention;

FIG. 11 shows a cross-sectional view of a p-type AlGaN heterostructure according to an embodiment of the present invention;

FIG. 12A shows one possible combination of dopant and composition profiles for the p-type AlGaN heterostructure shown in FIG. 11;

FIG. 12B shows a band diagram of the p-type AlGaN heterostructure shown in FIG. 12A;

FIG. 13 shows a cross-sectional view of a p-type AlGaN heterostructure according to an embodiment of the present invention;

FIG. 14A shows one possible combination of dopant and composition profiles for the p-type AlGaN heterostructure shown in FIG. 13;

FIG. 14B shows a band diagram of the p-type AlGaN heterostructure shown in FIG. 14A;

FIG. 15 shows a cross-sectional view of a p-type AlGaN heterostructure according to an embodiment of the present invention;

FIG. 16A shows one possible combination of dopant and composition profiles for the p-type AlGaN heterostructure shown in FIG. 15;

FIG. 16B shows a band diagram of the p-type AlGaN heterostructure shown in FIG. 16A;

FIG. 16C illustrates one possible combination of dopant and composition profiles for the p-type AlGaN heterostructure shown in FIG. 15;

FIG. 16D illustrates one possible combination of dopant and composition profiles for the p-type AlGaN heterostructure shown in FIG. 15;

FIG. 17 shows a cross-sectional view of a MQW structure according to an embodiment of the invention;

FIG. 18A shows one possible combination of dopant and component distributions for the MQW structure shown in FIG. 17;

FIG. 18B shows a band diagram of the MQW structure shown in FIG. 18A;

FIG. 19A shows the dopant and composition profile of a prior art AlGaN/AlGaN MQW;

FIG. 19B shows a band diagram of the AlGaN/AlGaN MQW of the prior art shown in FIG. 19A;

FIG. 20 shows a cross-sectional view of a MQW structure according to an embodiment of the invention;

FIG. 21A shows one possible combination of dopant and composition distributions for the MQW30 shown in FIG. 20;

FIG. 21B shows one possible combination of dopant and composition distributions for the MQW30 shown in FIG. 20;

FIG. 21C shows one possible combination of dopant and composition distributions for the MQW30 shown in FIG. 20;

FIG. 22 shows a cross-sectional view of an n-type AlGaN heterostructure according to an embodiment of the present invention;

FIG. 23A illustrates one possible combination of dopant and composition distributions for the n-type AlGaN heterostructure illustrated in FIG. 22;

FIG. 23B shows a band diagram of the n-type AlGaN heterostructure shown in FIG. 23A;

FIG. 24 shows a cross-sectional view of an n-type AlGaN heterostructure according to an embodiment of the present invention;

FIG. 25 shows a cross-sectional view of a p-type AlGaN/n-type AlInGaN heterostructure according to an embodiment of the present invention;

FIG. 26A shows one possible combination of dopant and composition distributions for the p-type AlGaN/n-type AlInGaN heterostructure shown in FIG. 23;

fig. 26B shows an energy band diagram of the p-type AlGaN/n-type AlInGaN heterostructure shown in fig. 26A.

Detailed Description

Throughout this specification, the term "group III nitride" generally refers to a metal nitride having a cation selected from group IIIA of the periodic table of elements. That is, III-nitrides include AlN, GaN, InN and their ternary (AlGaN, InGaN, InAlN) and quaternary (AlInGaN) alloys. In this specification, if one of the group III elements is so small that its presence has little or negligible effect on the overall material properties, such as lattice constant, band gap and conductivity, then the quaternion may be reduced to the triad for simplicity. For example, if the In composition In quaternary AlInGaN is very small, less than 1%, then the AlInGaN quaternary can be reduced to ternary AlGaN. Similarly, if one of the group III elements is extremely small, the ternary may be reduced to binary. For example, if the In composition In ternary InGaN is very small, less than 1%, then the InGaN ternary may be reduced to binary GaN. The group III nitride may also include small amounts of transition metal nitrides, such as TiN, ZrN, HfN with mole fractions no greater than 10%. For example, the group III nitride or nitride may include Al_xIn_yGa_zTi_(1-x-y-z)N、Al_xIn_yGa_zZr_(1-x-y-z)N、Al_xIn_yGa_zHf_(1-x-y-z)N, wherein (1-x-y-z) is less than or equal to 10 percent.

A semiconductor may be doped with donors or acceptors and is referred to as an n-type or p-type doped semiconductor or an n-or p-semiconductor, respectively. The donor and acceptor release carrier electrons and holes, respectively, into the host semiconductor, and thus the activated or ionized donor and acceptor are positively and negatively fixed band ions, respectively, located in the host semiconductor lattice.

Typically, two semiconductors with different band gap widths (and often also different lattice constants) formed epitaxially to each other form a heterostructure. Light emitting devices such as Light Emitting Diodes (LEDs) and laser diodes employ a number of heterostructures for strain management, dislocation blocking, carrier confinement, and light generation. Two particular heterostructures, quantum wells and superlattices, are widely used in LEDs. In general, a light emitting device such as an LED may include an n-type AlGaN structure made of an n-type AlGaN heterostructure, a p-type AlGaN structure made of a p-type AlGaN heterostructure, and a light emitting heterostructure active region made of a Multiple Quantum Well (MQW) sandwiched between the n-type AlGaN structure and the p-type AlGaN structure.

In the following, the principle and spirit of the present invention are explained using a wurtzite c-plane ((0002) plane) nitride light emitting device or structure as an example. The teachings given in this specification and the following examples can be applied to non-c-plane nitride semiconductors, II-VI semiconductors, and other semiconductor devices.

Fig. 1 shows a thin layer of positive charge inserted into a thick p-type doped semiconductor, which is a thick layer of p-type doped (e.g., Mg doped) AlGaN according to an embodiment of the present invention. Here, the positive sheet charge can be obtained via n-type delta doping, typically via turning on both the n-type dopant source and the group V source (e.g., ammonia or nitrogen) while turning off the group III source (e.g., Al and Ga) during AlGaN epitaxial growth. N-type dopants, such as Si, O or Ge atoms, occupy Al and/or Ga lattice sites in AlGaN, act as donors, ionizing to positive fixed charges via the release of mobile carrier electrons. Likewise, negative sheet charge can be obtained via p-type delta doping, via simultaneous turning on of the p-type dopant source and the group V source while the group III source is turned off during AlGaN epitaxial growth. P-type dopants, such as Mg atoms, occupy Al and/or Ga lattice sites in AlGaN, act as acceptors and ionize into negative fixed charges via the release of movable carrier holes. In practice, delta doping can also be equivalently achieved via heavily doping a very thin layer. For example, a 2nm thick layer is doped to 5X 10¹⁹cm^-3Or doping a 1nm thick layer to 10²⁰cm^-3Corresponding to a sheet density of 10¹³cm^-2Delta doping of (d).

Referring to fig. 1, considering the left-right symmetry around the charge of the thin layer and assuming that the lateral size of the charge thin layer is much larger than the distance (r) to the charge of the thin layer, and thus the charge thin layer is regarded as an infinite charge thin layer, the electric field strength e (r) and the electric potential u (r) in the vicinity of the charge thin layer can be calculated using gaussian theorem.

And the number of the first and second groups,

where σ, ε, ρ, r, and e are the sheet charge areal density, the dielectric constant of the bulk AlGaN layer, the bulk charge density, the distance to the sheet charge, and the basic charge capacity, respectively. In a doped semiconductor, bulk charge density is the net charge density produced by activated donors and acceptors, i.e.,

wherein the content of the first and second substances,

p and n are the concentrations of ionized donors, acceptors, free holes, and electrons, respectively. In the neutral region, the bulk charge density is zero. In the depletion region (free carriers are not allowed),

it is noted that, in the depletion region,

this is due to the dopant activation energy being greater than the thermal energy resulting in dopant under-activation (where N is present)_DAnd N_ADonor and acceptor dopant concentrations, respectively).

If the charge sheet is oppositely charged relative to the net activation dopant, the charge sheet will enhance the activation of the dopant by electrically repelling carriers away from the dopant. This creates a carrier depletion region around the thin layer of charge. Depletion region and neutral regionBoundary r between₀Where the electric field is zero (e) (r) ═ 0), given by the following equation:

then the depletion depth L_dComprises the following steps:

when the charge density of the thin layer is 10¹¹-10¹⁴e·cm^-2The depletion depth curve calculated using equation 5 for different bulk charge concentrations as varied over the range is shown in figure 4. It can be seen that the depletion depth can range from sub-nanometers to hundreds of nanometers depending on charge distribution.

Maximum potential drop Δ U_maxOccurs at the edge of depletion, where,

the maximum potential drop can be large and is expected to enhance the activation of deep acceptors in wide bandgap materials such as AlGaN. In fig. 3A, the samples with different bulk charge densities (ρ ═ 5 × 10) are plotted¹⁸、-1×10¹⁹、-2×10¹⁹e·cm^-3) Thin layer charge (σ ═ 10)¹³e·cm^-2) Some potential curves around. As can be seen, a maximum potential drop of several hundred milli-electron volts (meV) is achieved. More generally, the absolute value of the maximum potential drop predicted by equation 6 is plotted in fig. 3B. In conjunction with fig. 3B and 4, for vertical conduction, it is desirable to have a large maximum potential drop and a small depletion depth. This can be achieved by using a high sheet charge density and a high dopant concentration. For example, for σ 4 × 10¹³e.cm^-2And

in other words, the depletion depth is only 2nm and the maximum potential drop is 213 meV. This will greatly enhance deep acceptor activation within the AlGaN material. Aiming at sigma more than or equal to 6 multiplied by 10¹³cm^-2The maximum potential drop will exceed 500meV regardless of the dopant level. This means that even heavily Mg-doped AlN will have surface hole accumulation and become conductive because the Mg acceptor in AlN has an activation energy of about 500 meV.

As mentioned previously, the thin layer of charge may be achieved via delta doping, and thus, n-type and p-type delta doping may introduce positive and negative thin layer charges, respectively. Another way to obtain a thin layer of charge is to introduce polarization discontinuity, since

(

And

polarization and surface normal vectors, respectively), any discontinuity in the polarization vector at the interface may generate an interface sheet charge. In fig. 2, three thin layers of infinite charge are shown inserted into p-doped AlGaN, one thin layer of positive charge in the center and two thin layers of negative charge at the edges. This can be achieved by an AlGaN heterostructure with one lower Al content AlGaN layer sandwiched between two higher Al content AlGaN layers. In general, acceptor activation can be assisted as long as the electric field generated by the thin layer of charge is sufficiently strong. More specifically, according to the present invention, the acceptor will be fully activated if the maximum potential drop is close to (within the thermal energy) or greater than the acceptor activation energy, and the depletion depth is less than a few nanometers to allow quantum tunneling. Upon activation, free holes are pushed away from the thin layer of positive charge to the thin layer of negative charge, resulting in hole accumulation or formation of a two-dimensional hole gas (2DHG) near the thin layer of negative charge.

By symmetry, the AlGaN heterostructure shown in fig. 2 can be n-type doped instead of p-type doped, even if not explicitly shown. In this case, if the maximum potential drop is close to (within the thermal energy) or greater than the donor activation energy, and the depletion depth is within a few nanometers to allow quantum tunneling, the donor will be fully activated. Upon activation, free electrons are pushed away from the negatively charged thin layer to the positively charged thin layer, resulting in the accumulation of electrons or the formation of a two-dimensional electron gas (2DEG) in the vicinity of the positively charged thin layer.

According to one aspect of the invention, the thickness (h) of a single layer (say, the ith layer) within the heterostructure is such that to maximize electric field assisted dopant activation and carrier accumulation_i) Preferably, the inequality is satisfied:

wherein the content of the first and second substances,

is the bulk charge density in the depletion region of the i-th layer (

And

is the respective ionized donor and acceptor concentrations therein), σ_iIs the sheet charge density at the surface of the i-th layer with respect to the net active dopant (p) therein_i) Oppositely charged, and ρ_0i＝eN_Di-eN_AiIs the maximum charge density (N) in the depletion region allowed by doping_DiAnd N_AiAre the respective donor and acceptor concentrations of the ith layer).

The basic requirement of the inequality given by equation 7 is the thickness (h) of the ith layer_i) Within a range of_iAnd ρ_0iWithin or at the boundary of the resulting depletion region to ensure maximum dopant activation within the ith layer and to form a charge carrier accumulation on one surface of the ith layer.

FIG. 5AA simple AlGaN heterostructure is shown with the surface normal pointing [0002 ]]Oriented and comprises thick fully relaxed Al_xGa_1-xN template and thin fully strained Al_yGa_1-yN, i.e. Al_yGa_1-yN is formed in Al in a fully strained manner_xGa_1-xAnd N is higher. Due to the difference in composition, there is a piezoelectric and spontaneous polarization induced interface sheet charge. Using the parameters given in E.T.Yu et al ("Spontaneous and piezoelectric polarization in Nitride Semiconductors" by E.T.Yu, captor 4, III-V Nitride Semiconductors: Applications and Devices, edited by E.T.Yu, and O.Manasreh, published in 2003by Taylor&Francis), respectively calculating Al for y is more than or equal to x and y is less than or equal to x_yGa_1-yN/Al_xGa_1-xN interface charge density (σ) and is plotted in fig. 5B and 5C.

In FIG. 5B, where y ≧ x, means that an AlGaN thin film of high Al composition is formed in full strain on a thick AlGaN template of low Al composition, generating a positive interface sheet charge at the interface. In FIG. 5C, where y ≦ x, it means that the AlGaN thin film of low Al composition is formed on the thick AlGaN template of high Al composition with full strain, generating negative sheet charge at the interface. For such a simple heterostructure, the interfacial sheet charge density can be roughly described by the following formula:

wherein y and x are the Al components of the AlGaN film and the thick AlGaN template, respectively.

FIG. 6A shows a simple InGaN heterostructure with surface normal pointing [0002 ]]Oriented and containing thick, fully relaxed In_xGa_1-xN template and thin fully strained In_yGa_1-yN, i.e. In_yGa_1-yN is formed In full strain_xGa_1-xAnd N is higher. Respectively calculating In for y is more than or equal to x and y is less than or equal to x_yGa_1-yN/In_xGa_1-xN interface charge density (σ), and is plotted in fig. 6B and 6C.

In FIG. 6B, where y ≧ x, meaning that the high In composition InGaN thin film is fully strained formed on the low In composition thick InGaN template, a negative sheet charge is generated at the interface. In FIG. 6C, where y ≦ x, it means that the InGaN thin film of low In composition is fully strained on the thick InGaN template of high In composition, generating a positive sheet charge at the interface. The interfacial sheet charge density can be roughly described by the following equation:

where y and x are the In components of the InGaN thin film and the thick InGaN template, respectively.

Using equations 6-9, better AlGaN/AlGaN and InGaN/InGaN heterostructures can be designed for light emitting devices.

In fig. 7 a schematic cross-sectional view of a UV LED 1 according to another aspect of the invention is shown. The structure starts with a substrate 10, which substrate 10 is preferably UV transparent and may be selected from sapphire, AlN, SiC, etc. A thin buffer layer 21 made of AlN or AlGaN of high Al composition is formed on the substrate 10. A thick template 22 is then formed on the buffer layer 21. Template 22 may be made of a thick layer of AlN or AlGaN of high Al composition, for example, 0.3-4.0 μm thick. Even though not shown in fig. 7, a strain management structure, such as an Al composition graded AlGaN layer or sets of AlN/AlGaN superlattices, may be formed on template 22. A thick n-AlGaN layer 23 for current spreading is formed on the template 22, having a thickness of 2.0-5.0 μm (such as 3.0 μm) and a dopant concentration of 2.0 x 10¹⁸–5.0×10¹⁸cm^-3Si or Ge doped AlGaN. Forming heavily N-doped N on the N-AlGaN layer 23⁺ AlGaN heterostructure 24. Heterostructure 24 can be n-type doped to 8 x 10¹⁸-2×10¹⁹cm^-3And its design will be disclosed in detail in the following. Forming a thin lightly doped N on the heterostructure 24^--AlGaN layer 25(0.1-0.5 μm, such as 0.15 μm, n ═ 2.5 × 10¹⁷-2×10¹⁸cm^-3) To reduce current blocking and to prepare for uniform injection of current into subsequent stagesAl of (2)_bGa_1-bN/Al_wGa_1-wN MQW active region 30. MQW30 is composed of n-Al stacked alternately multiple times_bGa_1-bN barrier and Al_wGa_1-wN-well is formed, for example, 3 to 8 times. The barrier thickness ranges from 8.0-16.0 nm and the potential well thickness ranges from 1.0-5.0 nm. The overall thickness of the MQW30 is typically less than 200nm, for example 75nm, 100nm or 150 nm. n-Al_bGa_1-bN barrier and Al_wGa_1-wThe N-well can have an Al composition in the range of 0.3-1.0 and 0.0-0.85, respectively, and the barrier can differ from the Al composition of an adjacent well by at least 0.10, 0.15, 0.2, 0.25, or 0.3 (i.e., b-w ≧ 0.10, 0.15, 0.2, 0.25, or 0.3), or to ensure a barrier-well band gap width difference (Δ E)_g) At least 270meV to ensure quantum confinement effects. Further disclosure regarding MQW30 will be provided in connection with fig. 17, 18A, 18B, 20, 21A, 21B and 21C. Following the MQW30 is a p-type AlGaN heterostructure 40, the structure of which will be disclosed in detail below. The general functionality of heterostructure 40 includes electron blocking, hole supply, and hole injection. Another AlInGaN heterostructure 498 is formed on the heterostructure 40 and serves as a p-type contact layer. Heterostructure 498 will be disclosed in detail below.

As also seen in fig. 7, an n-ohmic contact 51 is formed on the heavily n-doped heterostructure 24. It may be made of a stack of thin metal layers, such as titanium/aluminium/titanium/gold (Ti/Al/Ti/Au), with corresponding layer thicknesses of 3-40/70-80/10-20/80-100nm, e.g. 35/75/15/90 nm. It can also be made of thin vanadium/aluminum/vanadium/gold (V/Al/V/Au) with corresponding layer thicknesses of 3-80/70-150/10-50/20-800nm, e.g., 20/100/20/60 nm. An n-contact 52 and an n-contact pad 5 are formed on the n-ohmic contact 51, which is made of a thick metal layer (such as a 2-5 μm thick gold layer). Likewise, a p-ohmic contact 61 is formed on the heterostructure 498 and is in contact with the heterostructure 498. The metal scheme of the p-ohmic contact 61 will be disclosed in the following in connection with heterostructure 498. A p-contact 62 and a p-contact pad 6 are formed on the p-ohmic contact 61, which is made of a thick metal layer (such as a 2-5 μm thick gold layer). The entire LED structure is then passivated by a passivation layer 70, except for the n-contact pad 5 and the p-contact pad 6 (the passivation layer 70 also coversDevice sidewalls even though not explicitly shown in fig. 7). The passivation layer 70 is preferably made of a material such as SiO₂、Al₂O₃、AlF₃、CaF₂And MgF₂Etc. UV transparent dielectrics.

A p-type AlGaN heterostructure 40 according to an embodiment of the present invention is shown in fig. 8. In this embodiment, the heterostructure 40 comprises a Mg doped AlGaN layer 401 interposed with a plurality of thin layers of positive charge 402. The thin layer of positive charge 402 is formed via donor dopant delta doping (e.g., Si delta-doping). Fig. 9A shows possible combinations of dopant and composition profiles for the heterostructure 40 shown in fig. 8, where the Mg doping and Al composition of the AlGaN layer 401 is constant and the sheet charge density of the sheet 402 is also constant. Fig. 9B shows an energy band diagram of the p-type AlGaN heterostructure 40 shown in fig. 9A. In other embodiments, the Mg doping and Al composition may not be constant, i.e., they may vary along the epitaxial direction. For example, the Mg doping and Al composition may decrease or increase along the epitaxial direction. Also, the sheet charge density may be different for different sheets 402.

Referring to fig. 9B, the present invention requires that the distance between adjacent thin layers 402 is greater than the maximum depletion depth (L) given by equation 5_d0) That is to say that,

where σ is the sheet charge density generated by the Si δ -doping, which is the product of the Si δ -doping sheet density and the basic charge quantity, and ρ₀Is the product of the acceptor doping concentration and the charge capacity of the electron (p)₀＝-eN_A). This requirement ensures that adjacent depletion regions of adjacent thin layers 402 do not overlap and that the entire heterostructure 40 is not depleted. Also, the maximum depletion depth around thin layer 402 is less than 10nm, e.g., less than 5nm or less than 2nm, allowing sufficient tunneling or diffusion of carriers once an external bias is applied to heterostructure 40. These requirements set the design rules of heterostructure 40 for its bulk acceptor dopant concentration, thin layer donor dopant density, and thin layer donor spatial arrangement.

Donor delta doping density in heterostructure 40 is 1 in volume10¹¹-1×10¹³cm^-2Within a range of, such as, 5 x 10¹¹-5×10¹²cm^-2Or of equal value. For example, it may be equivalent to 1 × 10 for a thickness of 1nm¹⁸-1×10²⁰cm^-3The bulk doping concentration of (a). Also, the higher the Mg dopant concentration, the greater the allowable Si δ -doping density in the heterostructure 40, so long as the design rules set forth above are satisfied. For example, referring to FIG. 4, if the depletion depth is allowed to be 2nm thick, then 2X 10¹⁹cm^-3The bulk Mg doping level of (a) allows a maximum Si sheet density of about 3.9 x 10 at sheet 402¹²cm^-2And adjacent thin layers 402 are positioned more than 2nm (e.g., 5 or 10nm) apart from each other.

According to embodiments of the present invention, inserting a thin layer of positive charge (via donor delta doping) into the p-type heterostructure 40 may improve the reliability of the UV LED. It is well known that p-type dopants in group III nitrides can attract the incorporation of hydrogen atoms. These hydrogen atoms occupy interstitial positions of the nitride lattice and are often positively charged, i.e., become H⁺. Gap H in p-type nitride when nitride LED is forward biased and in operation⁺Potential energy can be obtained which is inevitably converted into kinetic energy and drives H⁺Moving towards the MQW active region. Ions in the MQW active region may scatter carriers and reduce the radiative recombination probability, resulting in a reduction in light output efficiency. If the clearance H⁺This situation is exacerbated by high concentrations, strong electric fields and poor material quality. These are exactly the case for AlGaN based UV LEDs compared to GaN based visible LEDs. The gap H can be slowed down by inserting multiple thin layers of positive charge into the p-type nitride⁺And improves the reliability of the LED.

The heterostructure 40 shown in fig. 8 is a single p-type AlGaN layer, which is intercalated with one or more thin layers of positive charge.

Heterostructure 40 may also comprise more than one p-AlGaN layer interposed by a plurality of thin layers of positive charge. In fig. 10, a heterostructure 40 is shown comprising three Mg doped AlGaN layers 403, 404 and 405, each interposed with one or more thin layers of positive charge (4032, 4042 and 4052) and the thin layers of positive charge (4032, 4042 and 4052) divide each Mg doped

AlGaN layer

403, 404 and 405 into a plurality of regions (4031, 4041 and 4051) respectively. The AlGaN layers 403, 404 and 405 may differ from each other in thickness, composition, doping and thin layer of positive charge. For example, if AlGaN layer 403 is closest to MQW active region 30, AlGaN layer 403 may be the thickest, with the highest Al composition and the most thin layer of positive charge. In heterostructure 40, AlGaN layer 404 may have a second or third highest Al composition. However, each of the AlGaN layers 403, 404 and 405 still follows the design rules outlined previously, i.e. the distance between adjacent thin layers of positive charge should be greater than the maximum depletion depth, and the maximum depletion depth should be less than 10nm, for example less than 5nm or less than 2 nm.

In fig. 11 is shown a p-type AlGaN heterostructure 40 according to another embodiment of the present invention comprising a Mg doped AlGaN layer 41 of high Al composition (whose Al composition can be in the range of 0.6-0.8 and thickness in the range of 1.0-5.0 nm), more than one Mg doped AlGaN layer (42, 44, 46 and 48) intercalated with at least one thin layer of positive charge (422, 442, 462 and 482), and more than one Mg doped AlGaN layer (43, 45, 47 and 49) separating the AlGaN layers 42, 44, 46 and 48. The thin positive charge layers 422, 442, 462, and 482 divide the respective AlGaN layers (42, 44, 46, and 48) into thinner front regions (421, 441, 461, and 481) and thicker back regions (423, 443, 463, and 483). In this embodiment, the Al composition and Mg doping may be constant within one AlGaN layer, however, the Al composition and layer thickness of different AlGaN layers are typically different. In particular cases, AlGaN layers 42-49 can form a periodic structure (such as a superlattice), wherein layers 42, 44, 46, and 48 can be barrier layers having a higher Al composition (e.g., 0.60-0.85) and layers 43, 45, 47, and 49 can be well layers having a lower Al composition (e.g., 0.50-0.70), or vice versa. The previously outlined sheet charge design rules still apply to

positive charge sheets

422, 442, 462 and 482, i.e., the distance between adjacent positive charge sheets should be greater than the maximum depletion depth, and the maximum depletion depth should be less than 10nm, e.g., less than 5nm or less than 2 nm. The different AlGaN layers 42, 44, 46 and 48 may have the same or different Al compositions and thicknesses, and the different AlGaN layers 43, 45, 47 and 49 may have the same or different Al compositions and thicknesses.

Fig. 12A shows one possible combination of dopant and composition profiles for the heterostructure 40 shown in fig. 11, where the Mg doping level is constant within the heterostructure 40, and the Al composition of the AlGaN layers 42, 44 and 46 is higher, forming a barrier layer, the Al composition of the AlGaN layers 43, 45 and 47 is lower, forming a well layer, and the thin layer of positive charge (422, 442 and 462) is located within the barrier layer. Except for a thin layer of positive charge (sigma) produced by the Si delta-doping₃) In addition, there is a thin layer of charge (σ) caused by polarization discontinuity at the AlGaN barrier/well interface₀，-σ₀). Fig. 12B shows an energy band diagram of the p-type AlGaN heterostructure 40 shown in fig. 12A.

In fig. 13, a p-type AlGaN heterostructure 40 according to another embodiment of the present invention is shown, which comprises an Mg doped Al composition modulated AlGaN heterostructure. Specifically, it is formed by alternately stacking AlGaN barriers (42 ', 44', 46 'and 48') having an Al composition in the range of 0.60-0.85 and AlGaN wells (43 ', 45', 47 'and 49') having an Al composition in the range of 0.50-0.70. Different AlGaN barriers can have the same or different Al compositions and thicknesses, and different AlGaN potential wells can have the same or different Al compositions and thicknesses. Here, each potential barrier and each potential well may have different Al composition, doping concentration, and thickness. As previously discussed, for heterostructures having many individual layers, the thickness, doping and composition of each layer are not independent parameters, rather they satisfy the inequality given by equation 7 in accordance with the present invention. Therefore, the thickness L of the i-th barrier_BiSatisfies the following conditions:

where σ is the function of the discontinuity of the components (see equation 8)_BiIs the sheet charge density on the surface of the ith barrier, which is oppositely charged with respect to the net active dopant within the ith barrier, and p_B0i＝eN_BDi-eN_BAiIs the maximum charge density (N) in the doping-allowed barrier depletion region_BDiAnd N_BAiThe respective donor and acceptor concentrations of the ith barrier). And the thickness L of the jth potential well_WjSatisfies the following conditions:

where σ is the function of the discontinuity of the components (see equation 8)_WjIs the sheet charge density at the surface of the j-th potential well that is oppositely charged relative to the net active dopant in the j-th potential well, and ρ_W0j＝eN_WDj-eN_WAjIs the maximum charge density (N) in the well depletion region allowed by doping_WDjAnd N_WAjIs the respective donor and acceptor concentration of the j-th potential well).

The embodiment of the AlGaN heterostructure 40 shown in FIG. 13 is uniformly doped with N at a concentration_A(cm^-3) Al of Mg (A)_bGa_1-bN/Al_wGa_1-wAn N superlattice. Therefore, the potential barrier and potential well thicknesses according to equations 7 and 8 satisfy:

for example, if b-w is 0.2 and N_A＝10¹⁹cm^-3Then L is_B、L_WLess than or equal to 5 nm; if b-w is 0.4 and N_A＝2×10¹⁹cm^-3Then L is_B、L_WLess than or equal to 5nm, and the like.

Fig. 14A shows the doping and composition profiles for a particular (i.e., superlattice) embodiment of the heterostructure 40 shown in fig. 13, where the Mg doping can be constant or different (i.e., ρ) for the potential barriers and potential wells within the heterostructure 40_B0i＝ρ_W0jOr rho_B0i≠ρ_W0j). Fig. 14B shows an energy band diagram of the p-type AlGaN heterostructure 40 shown in fig. 14A.

Since the barrier layer of the heterostructure 40 is inclined by the polarization interface charges in such a manner as to hinder the vertical transfer of carriers, the barrier layer may be thinner than the potential well layer in the case where the carrier vertical transfer weight is larger than the quantum confinement.

A p-type AlGaN heterostructure 40 according to another embodiment of the present invention is shown in fig. 15. It differs from the embodiment shown in fig. 13 in the barrier layer. The heterostructure 40 shown in fig. 15 includes a first AlGaN barrier 42 'and more than one AlGaN barrier (44', 46 ', 48' as shown). The first barrier 42 ' in contact with the last quantum barrier of the MQW active region comprises a main barrier 422 ' and a back barrier isolation layer 423 '. The other barriers (shown as 44 ', 46 ', 48 ') comprise main and front and back barrier spacers, respectively. For example, the second barrier 44 'includes a main barrier 442' and a front barrier-isolating layer 441 'and a back barrier-isolating layer 443', the third barrier 46 'includes a main barrier 462' and a front barrier-isolating layer 461 'and a back barrier-isolating layer 463', and so on. The back barrier isolation layer is contacted with the main barrier and the next potential well, and the front barrier isolation layer is contacted with the previous potential well and the main barrier. For example, the back barrier isolation layer 423 'is in contact with its main barrier 422 and its next potential well 43'; the front barrier isolation layer 441 ' is in contact with its preceding potential well 43 ' and its main barrier 442 '; the back barrier isolation layer 443 ' is in contact with its main barrier 442 ' and its next potential well 45 ', and so on.

The back and front barrier spacers are made of p-type AlGaN having a different Al composition than the main barrier and the potential well so that the main barrier and the potential well can have different interface sheet charge densities, allowing greater flexibility in designing the heterostructure 40. The back barrier spacer and the front barrier spacer are thinner than the main barrier and the potential well. The back barrier spacer and the front barrier spacer may have the same composition or different compositions. The thickness of the back barrier spacer and the front barrier spacer are optionally in the range of 0.1nm to 1.5nm, such as 0.5nm to 1.2nm, respectively. The Al composition of the back barrier spacer layer and the front barrier spacer layer may be in the range of 0.0-1.0, such as 0.10-0.95, respectively. The Al composition of the main barrier may be in the range of 0.60-0.85.

In one embodiment, the back barrier spacer and the front barrier spacer have a higher Al composition than their main barriers. The combination of doping and composition profile for this embodiment is shown in fig. 16A, and its energy band diagram is shown in fig. 16B. As can be seen, in this embodiment, the jth potential well experiences a boundarySurface charge density σ_WjLarger than the interface charge density σ experienced by the ith main barrier_Bi. This is true because the Al composition difference between the spacer layer and the potential well is greater than the Al composition difference between the spacer layer and the main barrier, and this will generate more sheet charge at the potential well-spacer layer interface according to equation 8. In this embodiment, the Mg acceptor in the potential well will have a higher probability of activation. In one embodiment according to this aspect of the invention, the back barrier-spacer and the front barrier-spacer are each made of a 0.26-0.52nm thick layer of AlN. The AlN rear barrier isolation layer and the AlN front barrier isolation layer enhance the electron blocking capability, so that the reliability of the LED is improved.

In another embodiment, the Al composition (such as 0.0-0.6 or 0.2-0.4) of the back and front barrier spacers is lower than the adjacent potential wells (such as 0.5-0.7). The combination of doping and composition profile for this embodiment is illustrated in fig. 16C (band diagram not shown here). In this embodiment, the j-th potential well experiences an interface charge density σ_WjWhich is smaller than the interface charge density σ experienced by the ith main barrier_Bi. This is true because the Al composition difference between the spacer layer and the main barrier is larger than the Al composition difference between the spacer layer and the potential well, according to equation 8. In this embodiment, the Mg acceptors in the main barrier will have a higher probability of activation. In one embodiment according to this aspect of the invention, the back barrier-spacer and the front barrier-spacer are made of GaN layers 0.1-0.52 (such as 0.2-0.4) nm thick, respectively. The GaN rear barrier spacer and front barrier spacer improve the hole concentration in the AlGaN structure 40, thereby improving the internal quantum efficiency of the LED.

In a further embodiment according to this aspect of the invention, the at least one back barrier-isolating layer and/or the front barrier-isolating layer is made of an AlGaN thin layer, the Al composition of which is higher than the main barrier, and the at least one back barrier-isolating layer and/or the front barrier-isolating layer is made of an AlGaN thin layer, the Al composition of which is smaller than the potential well. One combination of doping and composition profile for this embodiment is shown in fig. 16D. Optionally, the at least one back barrier spacer and/or the front barrier spacer is made of AlN and the at least one back barrier spacer and/or the front barrier spacer is made of GaN, with a thickness in the range of 0.1-0.52 nm. Optionally, the at least one AlN spacer layer is placed closer to the MQW30 than the at least one GaN spacer layer.

The thicknesses of the potential well and the main barrier of the above embodiment can still follow equation 7.

The MQW active region is a special AlGaN heterostructure. The doping and composition profile of a prior art AlGaN MQW is shown in fig. 19A and an energy band diagram is shown in fig. 19B. As can be seen, the interfacial polarization sheet charge σ₀The quantum well band edges are tilted to spatially separate the injected electrons and holes, resulting in lower luminous efficiency. The interfacial polarization sheet charge also tilts the band edge of the quantum barrier, resulting in an increase in the resistance to electron and hole injection.

Another aspect of the present invention provides a MQW30, as shown in fig. 17. The MQW30 comprises undoped or lightly Si doped (e.g., 1.0-5.0 × 10)¹⁷cm^-3) And at least one first Quantum Barrier (QB)32, a second to last QB 34 formed on the first QB 32, and a last QB 32' formed on the second QB 34. The last QB 32' is undoped and contacts the last QW 33 on one side and the p-AlGaN heterostructure 40 (or other suitable p-AlGaN layer or structure) on the other side. The first QB 32 contains a uniform Si doping (n ═ 1.0-8.0 × 10)¹⁸cm^-3) Layer 321, a thin layer of Si delta-doped 322 and an undoped layer 323. The penultimate QB 34 contains a uniform Si doping (n ═ 1.0 to 8.0 × 10)¹⁸cm^-3) Layer 321 and undoped layer 323. The thicknesses of

layers

321 and 323 are 6-10nm and 2-4nm, respectively. The doping and composition profile of the MQW30 according to one embodiment of the invention is shown in fig. 18A, and the band diagram is shown in fig. 18B. Assuming that layer 321 has a thickness t, it has a doping concentration N of Si_DAnd the Si delta-doped thin layer has a charge density of sigma₃And QB/QW interface polarization sheet charge density is σ₀Then equation 10 holds.

σ₃＝σ₀-eN_Dt (equation 10)

In a fruitIn the examples where the Al composition difference between QB 32 and QW 33 was 0.1(b-w is 0.1, then equation 8, σ is used₀＝5×10¹²e.cm^-2) And layer 321 with a thickness of 8nm and doped with N_D＝5×10¹⁸cm^-3. The Si delta-doped sheet charge density is preferred according to equation 10 of the present invention. Since Si is a relatively shallow donor in AlGaN, the Si delta-doping density in layer 322 is 10 in one embodiment of the present invention¹²cm^-2。

In another embodiment, where the Al composition difference for QB 32 and QW 33 is 0.15(b-w is 0.15, then equation 8, σ is used₀＝7.5×10¹²e·cm^-2) And layer 321 with a thickness of 8nm and doped with N_D＝5×10¹⁸cm^-3. The Si delta-doped sheet charge density is preferred according to equation 10 of the present invention. Since Si is a rather shallow donor in AlGaN, the present invention requires a Si delta-doping density of 3.5X 10 in layer 322¹²cm^-2。

In yet another embodiment, where the Al composition difference for QB 32 and QW 33 is 0.2(b-w is 0.2, then equation 8, σ is used₀＝1.0×10¹³e·cm^-2) And a layer 321 with a thickness of 10nm doped with N_D＝5×10¹⁸cm^-3. The Si delta-doped sheet charge density is preferred according to equation 10 of the present invention. Since Si is a rather shallow donor in AlGaN, the present invention requires a Si delta-doping density of 5.0X 10 in layer 322¹²cm^-2。

The Al composition of QW 33, last QB 32', layer 321 and layer 323 may be in the range of 0.35-0.55, 0.55-0.65 and 0.55-0.65, respectively.

The MQW active region designed according to this aspect of the invention has higher light generation efficiency and lower device operating voltage.

In fig. 20, another embodiment of MQW30 according to this aspect of the invention is shown, comprising at least a first QB 32 "and a last QB 34" and a QW 33 ', the QW 33' comprising a main QW 330 sandwiched by a front QW spacer layer 331 and a rear QW spacer layer 332. Some of the doping and composition of MQW30 are shown in FIGS. 21A-21CAnd (4) distribution. As can be seen, all of the first QB 32 ", the front QW spacer 331 and the rear QW spacer 332 are uniformly doped with Si (n ═ 1.0-8.0 × 10)¹⁸cm^-3) All of the main QWs 330 may be undoped or doped with less than 5.0 × 10¹⁷cm^-3And finally QB 34 "is undoped. The rear QW spacer layer contacts the preceding and following main QWs 330 and the front QW spacer layer contacts the preceding and following main QWs.

The rear QW spacer layer and the front QW spacer layer are made of n-type AlGaN and have Al compositions different from those of the QB and main QW, so that the QB and main QW can have different interface sheet charge densities to allow greater flexibility in designing the MQW 30. The rear QW spacer layer and the front QW spacer layer are thinner than the main QW and QB layers. The back QW spacer layer and the front QW spacer layer may have the same composition or different compositions. The thickness of the back QW spacer layer and the front QW spacer layer may optionally be in the range of 0.1nm to 0.52 nm.

In one embodiment, the rear QW isolation layer and the front QW isolation layer have a higher Al composition than QB. A combination of doping and composition profile for this embodiment is shown in fig. 21A. In one embodiment according to this aspect of the invention, the rear QW isolation layer and the front QW isolation layer are made of AlN layers 0.1-0.52nm thick.

In another embodiment, the back QW isolation layer and the front QW isolation layer have a lower Al composition than the potential well. A combination of doping and composition profile for this embodiment is shown in fig. 21B. In one embodiment according to this aspect of the invention, the rear QW isolation layer and the front QW isolation layer are made of a GaN layer 0.1-0.52nm thick.

In a further embodiment according to this aspect of the invention, the at least one rear QW isolation layer and/or the front QW isolation layer is made of a thin AlGaN layer having an Al composition higher than QB, and the at least one rear QW isolation layer and/or the front QW isolation layer is made of a thin AlGaN layer having an Al composition smaller than the main QW. One combination of doping and composition distribution for this embodiment is shown in fig. 21C. Optionally, the at least one thin AlGaN spacer layer is made of AlN and the at least one thin AlGaN spacer layer is made of GaN, with a thickness in the range of 0.1-0.52 nm.

The Al composition of the first QB 32 ", the last QB 34", the main QW 330, the front QW isolating layer 331 and the rear QW isolating layer 332 may be in the range of 0.55-0.65, 0.35-0.55, 0.0-1.0 and 0.0-1.0, respectively.

MQW active regions designed according to this aspect of the invention have high light generation efficiency and low optical power attenuation over time.

FIG. 22 shows N in an embodiment according to a further aspect of the invention⁺A type AlGaN heterostructure 24 comprising a heavily Si doped Al composition modulated AlGaN heterostructure. In general, heterostructure 24 can be formed from multiple AlGaN layers having different Al compositions and thicknesses, all of which are heavily Si doped to 8.0 x 10¹⁸-2.0×10¹⁹cm^-3. The doping and thickness of each individual layer follows equation 7, similar to the discussion given above in connection with fig. 2 and 13.

N⁺Superlattice embodiments of type AlGaN heterostructure 24 may be provided by Al_bGa_1-bN barrier 240 and Al_wGa_1-wN-well 241 is stacked alternately for a plurality of times and uniformly doped with N_D(cm^-3) Of (c) is formed. Therefore, the potential barrier and potential well thicknesses according to equations 7 and 8 satisfy: l is_B；

For example, if b-w is 0.2 and N_D＝10¹⁹cm^-3Then L is_B，L_WLess than or equal to 5 nm; if b-w is equal to 0.2 and N_D＝8×10¹⁸cm^-3Then L is_B，L_WLess than or equal to 6.25nm, and the like.

Fig. 23A shows a superlattice embodiment of the heterostructure 24 shown in fig. 22, wherein the Si doping level is constant within the heterostructure 24. Fig. 23B shows an energy band diagram of the AlGaN heterostructure 24 shown in fig. 23A.

Fig. 24 shows another superlattice embodiment of the heterostructure 24 made of multiple alternating stacks of potential barriers 242 and potential wells 243, wherein the potential barrier 242 includes a Si delta-doped region 2422.

Since the barrier layer of the heterostructure 24 is inclined by the polarization interface charges in such a manner as to hinder the vertical transfer of electrons, in the heterostructure 24, the barrier layer may be thinner than the potential well layer in the case where the carrier vertical transfer weight is larger than the quantum confinement.

Similar to the embodiment shown in fig. 15, optionally, there may be a pre-barrier spacer and a post-barrier spacer (not explicitly shown in fig. 22 and 24) before and after

barriers

240 and 242. The back and front barrier spacers are made of n-type AlGaN with a different Al composition than the barriers and wells so that the barriers and wells can have different interface sheet charge densities to allow greater flexibility in designing the heterostructure 24. The back barrier spacer and the front barrier spacer are thinner than the potential barrier and the potential well. The back barrier spacer and the front barrier spacer may have the same composition or different compositions. The thickness of the back barrier spacer and the front barrier spacer is optionally in the range of 0.1nm to 1.5 nm.

In one embodiment, the back barrier spacer and the front barrier spacer have a higher Al composition than their main barriers. For example, the back barrier spacer and the front barrier spacer may be made of an AlN layer 0.26-0.52nm thick.

In another embodiment, the back barrier spacer and the front barrier spacer have a lower Al composition than the potential well. For example, the back barrier-spacer and the front barrier-spacer may be made of a GaN layer 0.1-0.52nm thick.

In a further embodiment according to this aspect of the invention, the at least one back barrier-isolating layer and/or the front barrier-isolating layer is made of a thin AlGaN layer, the Al composition of which is higher than the potential barrier, and the at least one back barrier-isolating layer and/or the front barrier-isolating layer is made of a thin AlGaN layer, the Al composition of which is smaller than the potential well. Optionally, the at least one thin AlGaN spacer layer is made of AlN and the at least one thin AlGaN spacer layer is made of GaN, with a thickness in the range of 0.1-0.52 nm.

In accordance with yet another aspect of the present invention, FIG. 25 shows a schematic cross-sectional view of a heterostructure 498 which serves as a p-type contact layer for the UV LED 1 shown in FIG. 7. Heterostructure 498 includes heavily Mg doped layers including AlGaN layer 4981, AlGaN barrier 4982, AlInGaN well 4983 and AlGaN barrier 4984, and heavily Si doped AlInGaN well 4985. One exemplary combination of doping and composition profile is shown in fig. 26A, with the band diagram shown in fig. 26B.

AlGaN layer 4981, in contact with or as the last layer of heterostructure 40 or other suitable p-type AlGaN structure, has a higher Al composition to ensure transparency to UV emission generated by MQW 30. For example, the Al composition and thickness of layer 4981 may be in the range of 0.5-0.65 and 2.0-5.0nm, respectively. The AlGaN layer 4981 may be p-type doped, such as Mg doped, with a doping concentration of 5.0 x 10¹⁹–3.0×10²⁰cm^-3. Barrier 4982 has a higher Al composition than layer 4981, e.g., 0.1-0.5 higher than layer 4981. Optionally, the barrier 4982 is a thin Mg-doped AlN layer. Potential well 4983 has a lesser Al composition or no Al composition, e.g., 0.0-0.4, or alternatively no Al composition but an In composition. It is desirable to have a large compositional discontinuity at the interface of potential barrier 4982 and potential well 4983 such that a high density of negative sheet charges (shown as- σ in fig. 26A and 26B) is generated therein_T2). The high density of interfacial sheet charges is used to steeply tilt down the band edge of potential well 4983. To this end, according to the invention, σ is preferred_T2≥3×10¹³e·cm^-2I.e., -sigma_T2≤-3×10¹³e·cm^-2. If the potential barrier 4982 and the potential well 4983 are made of AlGaN, this requires that the difference in Al composition of the potential barrier 4982 and the potential well 4983 be equal to or greater than 0.6 (refer to equation 8).

The barrier 4894 also needs to have a high Al composition, optionally made of Mg doped AlN. Potential well 4985 has a small or no Al composition, e.g., 0.0-0.4, or alternatively no Al composition but an In composition. It is desirable to have a large compositional discontinuity at the interface of potential barrier 4984 and potential well 4985 such that a high density of negative sheet charges (shown as- σ in fig. 26A and 26B) is generated therein_T1). The high density of interfacial sheet charges is used to steeply tilt down the band edge of potential well 4985. Is composed ofThus, according to the invention, σ is preferred_T1≥3×10¹³e·cm^-2I.e., -sigma_T1≤-3×10¹³e·cm^-2. If the potential barrier 4984 and the well 4985 are made of AlGaN, this requires that the difference in Al composition of the potential barrier 4984 and the well 4985 be equal to or greater than 0.6 (refer to equation 8).

By removing the Al component from the

potential wells

4983 and 4985 and adding the In component thereto, interface thin layers (σ) of high-density electric charges can be obtained according to fig. 5B, 5C, 6B, and 6C_T1，σ_T2＞＞3×10¹³e·cm^-2). In this regard, the

barriers

4982 and 4984 are preferably made of thin Mg-doped AlN, and the

potential wells

4983 and 4985 are preferably made of thin GaN or InGaN (e.g., In composition 0.1-0.3). The thicknesses of

potential barriers

4982 and 4984 are in the range of 0.26-2.0nm, respectively, and the thicknesses of

potential wells

4983 and 4985 are in the range of 0.52-3.0nm, respectively. The thicknesses of the

potential barriers

4982 and 4984 may be the same or different. The thickness of

potential wells

4983 and 4985 can be the same or different. The ultrathin film characteristics of

barriers

4982, 4984 and

wells

4983, 4985 provide good vertical conductivity for carriers injected from p-contact 62 and high UV transparency for photons generated from MQW 30. Further, potential well 4983 can be heavily Mg doped at 5.0 × 10¹⁹-3.0×10²⁰cm^-3And potential well 4985 may be heavily Si doped at 1.0 x 10¹⁹-1.5×10²⁰cm^-3Within the range of (1). The

barriers

4982 and 4984 may be Mg doped with a doping concentration of 5.0 x 10¹⁹-3.0×10²⁰cm^-3。

The high density of interface sheet charges will sharply tilt down the band edges of

narrow bandgap wells

4983 and 4985, changing

wells

4983 and 4985 to p, respectively⁺Layer, due to hole accumulation, and becomes n⁺Layer, due to electron accumulation. Due to p thus formed⁺Layer (4983) and n⁺The layers (4985) are in close proximity to each other (separated by only one thin AlN layer (4984)), and electrons in the valence band of well 4983 are in a lower energy state in the conduction band of well 4985 (see fig. 26B), so with a positive bias on well 4985, electrons in the valence band of well 4983 can tunnel to the potentialConduction band of well 4985. The extraction of electrons from the valence band of the potential well 4983 is the same as the injection of holes into the valence band of the potential well 4983. That is, the p-type contact layer heterostructure 498 forms a tunneling junction to provide carrier injection from the p-ohmic contact 61 to the p-type AlGaN heterostructure 40, and thus to the MQW 30.

Since potential well 4985 is n⁺Layer, the metal used to make the p-ohmic contact 61 can be selected from a large group of metals due to electron accumulation on the surface. In one embodiment, the p-ohmic contacts 61 may be made of thin Ti/Al/Ti/Au, each with a layer thickness of 3-40/70-80/10-20/80-100nm, e.g., 3.5/75/15/90 nm. In another embodiment, the p-ohmic contacts 61 may be made of V/Al/V/Au, each with a layer thickness of 3-80/70-150/10-50/20-800nm, e.g., 4.0/100/20/60nm (as with the n-ohmic contact 51, this is required). High work function metals such as nickel (Ni), tungsten (W), palladium (Pd), platinum (Pt), iridium (Ir), osmium (Os), rhodium (Rh), and molybdenum (Mo) may also be used for the p-ohmic contact. In one embodiment, the p-ohmic contacts 61 are made of Ni/Rh, with respective layer thicknesses of 3-10/30-150 nm. The use of Al and Rd in the p-ohmic contact 61 enhances the UV reflectivity for better light extraction efficiency.

The invention has been described using exemplary embodiments. It is to be understood, however, that the scope of the invention is not to be limited to the disclosed embodiments. On the contrary, the invention is intended to cover various modifications and similar arrangements or equivalents, which may be made by those skilled in the art without undue experimentation or undue experimentation. The scope of the claims, therefore, should be accorded the broadest interpretation so as to encompass all such modifications and similar arrangements and equivalents.

Furthermore, a third aspect of the present invention provides:

an multiple quantum well structure for a light emitting device or photodetector, comprising an alternating stack of AlGaN barriers and AlGaN potential wells, wherein each of the AlGaN barriers and the AlGaN potential wells has a thickness that satisfies:

wherein h is_iIs the thickness of the ith AlGaN barrier or potential well; sigma_iIs the sheet charge density of the thin layer of charge on the surface of the ith AlGaN barrier or well that is oppositely charged relative to the net activating dopant in the ith AlGaN barrier or well; and ρ_0i＝eN_Di-eN_AiIs the maximum bulk charge density allowed by the applied doping concentration, in the depletion region of the i-th AlGaN barrier or well created by the charge sheet, N_DiAnd N_AiThe donor and acceptor concentrations in the ith AlGaN barrier or potential well, respectively, and e is the basic charge capacity.

The multiple quantum well structure of item 1, wherein one or more of the AlGaN potential wells include an n-type doped AlGaN front well isolation layer, an n-type doped AlGaN rear well isolation layer, and an AlGaN main potential well sandwiched between the n-type doped AlGaN front well isolation layer and the n-type doped AlGaN rear well isolation layer, wherein an Al component of the n-type doped AlGaN front well isolation layer and an Al component of the n-type doped AlGaN rear well isolation layer are different from an Al component of the AlGaN main potential well, and a thickness of the n-type doped AlGaN front well isolation layer and a thickness of the n-type doped AlGaN rear well isolation layer are smaller than a thickness of the AlGaN main potential well and a thickness of an adjacent AlGaN potential well.

An multiquantum well structure of the item 3. item 2, wherein the n-type doped AlGaN front well isolation layer and the n-type doped AlGaN rear well isolation layer are doped with Si at doping concentrations of 1.0 × 10, respectively¹⁸-8.0×10¹⁸cm^-3AlGaN main potential well is undoped or doped with Si at a doping concentration of less than 5.0 x 10¹⁷cm^-3At least one of the AlGaN barriers is doped with Si at a doping concentration of 1.0 x 10¹⁸-8.0×10¹⁸cm^-3。

The multiple quantum well structure of item 4, item 2, wherein the thickness of the n-type doped AlGaN front well isolation layer and the thickness of the n-type doped AlGaN back well isolation layer are within a range of 0.1nm to 0.52nm, respectively.

An multiquantum well structure of item 5, item 2, wherein the Al component of the n-type doped AlGaN front well isolation layer and the Al component of the n-type doped AlGaN rear well isolation layer are higher than the Al component of the adjacent AlGaN barrier.

The multiple quantum well structure of item 6, item 5, wherein the n-type doped AlGaN front well isolation layer and the n-type doped AlGaN rear well isolation layer are made of AlN and have thicknesses in the range of 0.1 to 0.52nm, respectively.

The multiple quantum well structure of item 7, item 2, wherein the Al component of the n-type doped AlGaN front well isolation layer and the Al component of the n-type doped AlGaN rear well isolation layer are lower than the Al component of the AlGaN main potential well.

The multiple quantum well structure of item 8, wherein the n-type doped AlGaN front well spacer and the n-type doped AlGaN rear well spacer are made of GaN, and have thicknesses in the range of 0.1 to 0.52nm, respectively.

The multiple quantum well structure of item 9, item 2, wherein the Al composition of the n-type doped front well isolation layer is higher than the Al composition of the adjacent AlGaN barrier, and the Al composition of the n-type doped AlGaN back well isolation layer is lower than the Al composition of the AlGaN main potential well; or the Al component of the n-type doped AlGaN rear well isolation layer is higher than that of the AlGaN barrier, and the Al component of the AlGaN front well isolation layer is lower than that of the AlGaN main potential well.

The multiple quantum well structure of item 10. item 9, wherein one of the n-type doped AlGaN front well isolation layer and the n-type doped AlGaN back well isolation layer is made of AlN and the other is made of GaN, and the thicknesses are respectively in the range of 0.1 to 0.52 nm.

The multiple quantum well structure of item 2, further comprising an undoped AlGaN barrier formed on one of the AlGaN potential wells on one side and in contact with the p-type structure of the light emitting device or photodetector on the other side.

The multiple quantum well structure of item 12, item 1, wherein one or more of the AlGaN barriers comprise one or more thin layers of positive charge, and a distance between two adjacent thin layers of positive charge is greater than a depletion depth of a depletion region generated by any one of the two adjacent thin layers of positive charge.

The multiple quantum well structure of item 12, wherein the thin layer of positive charges is formed via Si δ -doping, and the thin layer doping density is equal to or greater than 10¹²cm^-2。

The multiple quantum well structure of item 14. item 12, wherein the thin layer comprising positive chargesEach AlGaN barrier includes a doping concentration of 1.0 to 8.0 x 10¹⁸cm^-3And an undoped layer separated by a thin layer of positive charge.

Item 15 the multiple quantum well structure of item 14, wherein the thickness of the Si doped layer of each AlGaN barrier comprising a thin layer of positive charge is in the range of 6 to 10nm, respectively, and the thickness of the undoped layer of each AlGaN barrier comprising a thin layer of positive charge is in the range of 2 to 4nm, respectively.

The multiple quantum well structure of item 12, further comprising an undoped AlGaN barrier formed on one of the AlGaN potential wells on one side and in contact with the p-type structure of the light emitting device or photodetector on the other side.

Item 17. the multiple quantum well structure of item 12, wherein one or more of the AlGaN potential wells comprise an n-type doped AlGaN front well isolation layer, an n-type doped AlGaN rear well isolation layer, and an AlGaN main potential well sandwiched between the n-type doped AlGaN front well isolation layer and the n-type doped AlGaN rear well isolation layer, wherein an Al component of the n-type doped AlGaN front well isolation layer and an Al component of the n-type doped AlGaN rear well isolation layer are different from an Al component of the AlGaN main potential well, and a thickness of the n-type doped AlGaN front well isolation layer and a thickness of the n-type doped AlGaN rear well isolation layer are less than a thickness of the AlGaN main potential well and a thickness of the adjacent AlGaN potential well.

The multiple quantum well structure of item 18 item 17, wherein the n-type doped AlGaN front well isolation layer and the n-type doped AlGaN rear well isolation layer are doped with Si at doping concentrations of 1.0 × 10, respectively¹⁸-8.0×10¹⁸cm^-3AlGaN main potential well is undoped or doped with Si at a doping concentration of less than 5.0 x 10¹⁷cm^-3At least one of the AlGaN barriers is doped with Si at a doping concentration of 1.0 x 10¹⁸-8.0×10¹⁸cm^-3。

The multiple quantum well structure of item 19, wherein a thickness of the n-type doped AlGaN front well isolation layer and a thickness of the n-type doped AlGaN back well isolation layer are in a range of 0.1nm to 0.52nm, respectively.

Item 20 the multiple quantum well structure of item 17, wherein the Al composition of the n-type doped AlGaN front well isolation layer and the Al composition of the n-type doped AlGaN back well isolation layer are higher than the Al composition of the adjacent AlGaN barrier.

Item 21 is the multiple quantum well structure of item 17, wherein an Al composition of the n-type doped AlGaN front well isolation layer and an Al composition of the n-type doped AlGaN rear well isolation layer are lower than an Al composition of the AlGaN main potential well.

The multiple quantum well structure of item 22, wherein the Al composition of the n-type doped front well isolation layer is higher than the Al composition of the adjacent AlGaN barrier, and the Al composition of the n-type doped AlGaN back well isolation layer is lower than the Al composition of the AlGaN main potential well; or the Al component of the n-type doped AlGaN rear well isolation layer is higher than that of the AlGaN barrier, and the Al component of the AlGaN front well isolation layer is lower than that of the AlGaN main potential well.

An led according to item 23, comprising:

an n-type AlGaN structure;

a p-type AlGaN structure; and the number of the first and second groups,

wherein the active region comprises the multiple quantum well structure of item 1.

A fourth aspect of the present invention provides:

item 1. a heterostructure for a light emitting device or photodetector, comprising an alternating stack of n-type doped Al_bGa_1-bN-barrier and N-type doped Al_wGa_1-wN-well, wherein the N-type is doped with Al_bGa_1-bN-barrier and N-type doped Al_wGa_1-wThe thickness of each of the N-well respectively satisfies:

The heterostructure of item 2. item 1, wherein the n-type is doped with Al_bGa_1-bN-barrier and N-type doped Al_wGa_1-wThe N-well is doped with Si at a doping concentration of 8.0X 10¹⁸–2.0×10¹⁹cm^-3And b-w is equal to or greater than 0.15.

The heterostructure of item 3. item 2, wherein the n-type is doped with Al_bGa_1-bOne or more of the N barriers comprises a Si delta-doped region.

The heterostructure of item 4. item 1, wherein at least one of the n-type layers is doped with Al_bGa_1-bAn N-type doped AlGaN front barrier isolation layer and an N-type doped AlGaN rear barrier isolation layer are formed on two sides of the N barrier, wherein the Al component of the N-type doped AlGaN front barrier isolation layer and the Al component of the N-type doped AlGaN rear barrier isolation layer are different from the at least one N-type doped Al_bGa_1-bThe Al component of the N barrier, and the thickness of the N-type doped AlGaN front barrier isolation layer and the thickness of the N-type doped AlGaN rear barrier isolation layer are less than that of the at least one N-type doped Al_bGa_1-bThe thickness of the N-barrier.

The heterostructure of item 5. item 4, wherein a thickness of the n-doped AlGaN front barrier spacer layer and a thickness of the n-doped AlGaN back barrier spacer layer are in a range of 0.1nm to 1.5 nm.

The heterostructure of item 6. item 4, wherein the Al composition of the n-doped AlGaN front barrier spacer and the Al composition of the AlGaN back barrier spacer are higher than the at least one n-doped Al_bGa_1-bAl composition of N barrier.

The heterostructure of item 7. item 4, wherein the Al component of the AlGaN front barrier spacer and the Al component of the AlGaN back barrier spacer are higher than the adjacent n-type doped Al_wGa_1-wThe Al composition of the N-well is low.

The heterostructure of item 8. item 4, wherein the AlGaN front barrier spacer layer has a higher Al composition than the at least one n-doped Al_bGa_1-bThe Al component of the N barrier layer and the Al component of the AlGaN back barrier isolation layer are lower than those of the adjacent N-type doped Al_wGa_1- _wAn Al component of the N-well; or the Al component of the AlGaN back barrier isolating layer is higher than that of the at least one n-type doped Al_bGa_1-bN potential barrierAnd the Al composition of the AlGaN front barrier separation layer is lower than that of the adjacent n-type doped Al_wGa_1-wAl composition of N-well.

An item 9. a light emitting device, comprising:

an n-type AlGaN structure;

a p-type AlGaN structure; and the number of the first and second groups,

wherein the n-type AlGaN structure comprises the heterostructure of item 1.

The light emitting device of item 10 item 9, wherein the p-type AlGaN structure comprises a p-type heterostructure including one or more p-type doped AlGaN layers, each of the one or more p-type doped AlGaN layers having one or more thin layers of positive charge inserted therein, wherein a distance between two adjacent thin layers of positive charge is greater than a depletion depth of a depletion region generated by any one of the two adjacent thin layers of positive charge.

The light emitting device of item 11, item 10, wherein a depletion depth of a depletion region generated by any of the one or more thin layers of positive charge is less than 10 nm.

The light emitting device of item 12 item 10, wherein the one or more thin positively charged layers are formed by Si δ -doping with a thin layer doping density of 1 × 10¹¹–1×10¹³cm^-2。

The light emitting device of item 10, wherein the p-doped AlGaN layer disposed closest to the active region of the light emitting device or photodetector comprises a more thin layer of positive charge, a higher Al composition and a greater thickness than the remaining layers of the one or more p-doped AlGaN layers.

The light emitting device of item 14, item 10, wherein the p-type heterostructure further comprises a plurality of p-type doped AlGaN layers not including the thin positively charged layers therein, alternately stacked with said one or more p-type doped AlGaN layers including the one or more thin positively charged layers, wherein each of the plurality of p-type doped AlGaN layers not including the thin positively charged layers has an Al composition higher than that of an adjacent p-type doped AlGaN layer including the one or more thin positively charged layers, or each of the plurality of p-type doped AlGaN layers not including the thin positively charged layers has an Al composition lower than that of an adjacent p-type doped AlGaN layer including the one or more thin positively charged layers.

The light emitting device of item 15, item 14, wherein the positively charged thin layer divides each of the one or more p-doped AlGaN layers comprising one or more positively charged thin layers into a thinner front region and a thicker back region.

The light emitting device of item 16, item 10, wherein the p-type heterostructure further comprises another p-doped AlGaN layer, the one or more p-doped AlGaN layers formed thereon, wherein the another p-doped AlGaN layer has an Al composition in the range of 0.6-0.8 and a thickness in the range of 1.0-5.0 nm.

The light emitting device of item 17 item 9, wherein the p-type AlGaN structure comprises a p-type heterostructure including alternately stacked p-type doped AlGaN barriers and p-type doped AlGaN wells, wherein a thickness of each of the AlGaN barriers and the AlGaN wells respectively satisfies:

wherein h is_iIs the thickness of the ith AlGaN barrier or potential well; sigma_iIs the sheet charge density of a thin layer of charge on a surface of the ith AlGaN barrier or well that is oppositely charged relative to the net active dopant band of the ith AlGaN barrier or well; and ρ_0i＝eN_Di-eN_AiIs the maximum bulk charge density allowed by the applied doping concentration, N in the depletion region of the ith AlGaN barrier or well created by the charge sheet_DiAnd N_AiThe concentrations of a donor and an acceptor in the ith AlGaN potential barrier or potential well are respectively, and e is the basic charge capacity; and the number of the first and second groups,

at least one of the AlGaN barriers comprises an AlGaN front barrier isolation layer, an AlGaN rear barrier isolation layer and an AlGaN main barrier which is clamped between the AlGaN front barrier isolation layer and the AlGaN rear barrier isolation layer, wherein the Al component of the AlGaN front barrier isolation layer and the Al component of the AlGaN rear barrier isolation layer are different from the Al component of the AlGaN main barrier, and the thickness of the AlGaN front barrier isolation layer and the thickness of the AlGaN rear barrier isolation layer are smaller than that of the AlGaN main barrier.

Item 18. the light emitting device of item 17, wherein a thickness of the AlGaN front barrier spacer and a thickness of the AlGaN back barrier spacer are in a range of 0.1nm to 1.5 nm.

The light emitting device of item 19 item 17, wherein the Al composition of the AlGaN front barrier isolation layer and the Al composition of the AlGaN rear barrier isolation layer are higher than the Al composition of the AlGaN main barrier.

The light emitting device of item 20, wherein the AlGaN front barrier spacer and the AlGaN rear barrier spacer are made of AlN and have thicknesses in the range of 0.26-0.52nm, respectively.

The light emitting device of item 21, wherein an Al composition of the AlGaN front barrier isolation layer and an Al composition of the AlGaN rear barrier isolation layer are lower than an Al composition of an adjacent AlGaN potential well.

The light emitting device of item 22 item 21, wherein the AlGaN front barrier spacer and the AlGaN rear barrier spacer are made of GaN and have thicknesses in a range of 0.1-0.52nm, respectively.

The light emitting device of item 23, wherein the AlGaN front barrier separation layer has an Al composition higher than that of the AlGaN main barrier, and the AlGaN rear barrier separation layer has an Al composition lower than that of an adjacent AlGaN potential well; or the Al component of the AlGaN rear barrier isolation layer is higher than that of the AlGaN main barrier, and the Al component of the AlGaN front barrier isolation layer is lower than that of the adjacent AlGaN potential well.

The light emitting device of item 24 item 17, wherein the p-type heterostructure further includes another p-type doped AlGaN barrier, the alternating stack of the p-type doped AlGaN barrier and the p-type doped AlGaN potential being formed thereon, wherein the other p-type doped AlGaN barrier comprises a primary barrier in contact with a last quantum barrier of the MQW active region of the light emitting device or photodetector, and a back barrier spacer, the alternating stack of the p-type doped AlGaN barrier and one of the p-type doped AlGaN potential being formed thereon.

A fifth aspect of the present invention provides:

a p-type heterostructure as a p-type contact layer for a light emitting device or photodetector, comprising:

a first potential barrier;

a first AlInGaN well formed over the first barrier;

a second AlInGaN well formed on the second AlGaN barrier;

Item 2 the p-type contact layer of item 1, wherein at least one of the first AlGaN barrier and the second AlGaN barrier is made of AlN.

The p-type contact layer of item 3. item 1, wherein at least one of the first AlInGaN well and the second AlInGaN well is formed from In_xGa_1-xN, wherein x is equal to or less than 0.3.

Item 4 the p-type contact layer of item 1, wherein a thickness of the first AlGaN barrier and a thickness of the second AlGaN barrier are respectively in a range of 0.26 to 2.0 nm.

The p-type contact layer of item 5 item 1, wherein a thickness of the first AlInGaN well and a thickness of the second AlInGaN well are each in a range of 0.52-3.0 nm.

The p-type contact layer of item 6 item 1, wherein the first AlInGaN potential well is p-type doped with a doping concentration of 5.0 x 10¹⁹–3.0×10²⁰cm^-3And the second AlInGaN well is n-type doped with a doping concentration of 1.0 × 10¹⁹–1.5×10²⁰cm^-3。

Item 7. the p-type contact layer of item 1, wherein the first AlGaN barrier is p-type doped with a doping concentration of 5.0 × 10¹⁹–3.0×10²⁰cm^-3And the second AlGaN barrier is doped p-type with a doping concentration of 5 × 10¹⁹–3.0×10²⁰cm^-3。

Item 8 the p-type contact layer of item 1, further comprising an AlGaN layer on which the first AlGaN barrier is formed, wherein the AlGaN layer on which the first AlGaN barrier is formed has an Al composition lower than that of the first AlGaN barrier and is in the range of 0.5 to 0.65, a thickness in the range of 2.0 to 5.0nm, and is p-type doped with a doping concentration of 5.0 × 10¹⁹–3.0×10²⁰cm^-3。

An item 9. a light emitting device, comprising:

an n-type AlGaN structure;

a p-type AlGaN structure;

a p-type contact structure formed on the p-type AlGaN structure, wherein the p-type contact structure comprises the p-type contact layer described in item 1.

The light emitting device of item 10, wherein the p-doped AlGaN layer disposed closest to the active region of the light emitting device or photodetector comprises a more thin layer of positive charge, a higher Al composition and a greater thickness than other layers of the one or more p-doped AlGaN layers.

The light emitting device of item 15, item 14, wherein the positively charged thin layer divides each of the one or more p-type doped AlGaN layers comprising the one or more positively charged thin layers into a thinner front region and a thicker back region.

wherein h is_iIs the thickness of the ith AlGaN barrier or potential well; sigma_iIs the sheet charge density of a thin layer of charge on a surface of the ith AlGaN barrier or well that is oppositely charged relative to the net active dopant band of the ith AlGaN barrier or well; and ρ_0i＝eN_Di-eN_AiIs the maximum bulk charge density allowed by the applied doping concentration, in the depletion region of the i-th AlGaN barrier or well created by the charge sheet, N_DiAnd N_AiRespectively being the ith AlDonor and acceptor concentrations in a GaN potential barrier or well, e is the basic charge capacity; and (c) a second step of,

The light emitting device of item 18, wherein a thickness of the AlGaN front barrier spacer and a thickness of the AlGaN back barrier spacer are in a range of 0.1nm to 1.5 nm.

The light emitting device of item 19, wherein an Al composition of the AlGaN front barrier isolation layer and an Al composition of the AlGaN rear barrier isolation layer are higher than an Al composition of the AlGaN main barrier.

The light emitting device of item 23, wherein the AlGaN front barrier separation layer has an Al composition higher than that of the AlGaN main barrier, and the AlGaN rear barrier separation layer has an Al composition lower than that of an adjacent AlGaN potential well; or the Al component of the AlGaN back barrier isolation layer is higher than that of the AlGaN main barrier, and the Al component of the AlGaN front barrier isolation layer is lower than that of the adjacent AlGaN potential well.

The light emitting device of item 24. item 17, wherein the p-type heterostructure further comprises another p-doped AlGaN barrier on which the alternating stack of p-doped AlGaN barriers and p-doped AlGaN potential wells are formed, wherein the other p-doped AlGaN barrier comprises a primary barrier in contact with a last quantum barrier of the MQW active region of the light emitting device or photodetector, and a back barrier isolation layer on which one of the alternating stack of p-doped AlGaN barriers and p-doped AlGaN potential wells is formed.

Claims

1. A light emitting device comprising:

an n-type AlGaN structure;

a p-type AlGaN structure;

a p-type contact layer formed on the p-type AlGaN structure, wherein the p-type contact layer includes:

a first AlGaN barrier;

a first AlInGaN well formed on the first AlGaN barrier;

a second AlGaN barrier formed on the first AlInGaN well; and (c) a second step of,

a second AlInGaN well formed on the second AlGaN barrier;

2. The light emitting device of claim 1, wherein at least one of the first and second AlGaN barriers is made of AlN.

3. The light emitting device of claim 1, wherein at least one of the first AlInGaN potential well and the second AlInGaN potential well is formed from In_xGa_1-xN, wherein x is equal to or less than 0.3.

4. The light emitting device of claim 1, wherein a thickness of the first AlGaN barrier and a thickness of the second AlGaN barrier are each in a range of 0.26-2.0 nm.

5. The light emitting device of claim 1, wherein a thickness of the first AlInGaN well and a thickness of the second AlInGaN well are each in a range of 0.52-3.0 nm.

6. The light emitting device of claim 1 wherein the first AlInGaN potential well is p-type doped with a doping concentration of 5.0 x 10¹⁹–3.0×10²⁰cm^-3And the second AlInGaN potential well is doped n-type with a doping concentration of 1.0 × 10¹⁹–1.5×10²⁰cm^-3。

7. The light emitting device of claim 1, wherein the first AlGaN barrier is p-type doped with a doping concentration of 5.0 x 10¹⁹–3.0×10²⁰cm^-3And the second AlGaN barrier is doped p-type with a doping concentration of 5 x 10¹⁹–3.0×10²⁰cm^-3。

8. The light emitting device of claim 1, further comprising an AlGaN layer on which said first AlGaN barrier is formed, wherein said AlGaN layer on which said first AlGaN barrier is formed has an Al composition lower than said Al composition of said first AlGaN barrier and in the range of 0.5-0.65, a thickness in the range of 2.0-5.0nm, and is p-type doped, with a doping concentration of 5.0 x 10¹⁹–3.0×10²⁰cm^-3。

9. The light emitting device of claim 1, wherein the p-type AlGaN structure comprises a p-type heterostructure comprising one or more p-type doped AlGaN layers, each of the one or more p-type doped AlGaN layers comprising one or more thin layers of positive charge inserted therein, wherein a distance between two adjacent thin layers of positive charge is greater than a depletion depth of a depletion region generated by any one of the two adjacent thin layers of positive charge.

10. The light emitting device of claim 9, wherein the depletion depth of a depletion region generated by any of the one or more thin layers of positive charge is less than 10 nm.

11. The light emitting device of claim 9, wherein the one or more thin positively charged layers are formed by Si delta-doping with a thin layer doping density of 1 x 10¹¹–1×10¹³cm^-2。

12. The light emitting device of claim 9, wherein the p-doped AlGaN layer placed closest to the active region of the light emitting device comprises more thin layers of positive charge, higher Al composition and greater thickness than other layers of the plurality of p-doped AlGaN layers.

13. The light emitting device of claim 9, wherein the p-type heterostructure further comprises a plurality of p-type doped AlGaN layers not including a thin layer of positive charge therein, alternately stacked with the one or more p-type doped AlGaN layers including one or more thin layers of positive charge, wherein each of the plurality of p-type doped AlGaN layers not including a thin layer of positive charge therein has an Al composition higher than that of an adjacent p-type doped AlGaN layer including one or more thin layers of positive charge, or each of the plurality of p-type doped AlGaN layers not including a thin layer of positive charge therein has an Al composition lower than that of an adjacent p-type doped AlGaN layer including one or more thin layers of positive charge.

14. The light emitting device of claim 13, wherein the positively charged thin layer divides each of the one or more p-type doped AlGaN layers comprising one or more positively charged thin layers into a thinner front region and a thicker back region.

15. The light emitting device of claim 9, wherein the p-type heterostructure further comprises another p-type doped AlGaN layer, the one or more p-type doped AlGaN layers formed thereon, wherein the another p-type doped AlGaN layer has an Al composition in a range of 0.6-0.8 and a thickness in a range of 1.0-5.0 nm.

16. The light emitting device of claim 1, wherein the p-type AlGaN structure comprises a p-type heterostructure comprising alternately stacked p-type doped AlGaN barriers and p-type doped AlGaN wells, wherein a thickness of each of the AlGaN barriers and the AlGaN wells respectively satisfies:

wherein h is_iIs the thickness of the ith AlGaN barrier or potential well; sigma_iIs the sheet charge density of a thin layer of charge on a surface of the ith AlGaN barrier or well that is oppositely charged relative to the net active dopant band of the ith AlGaN barrier or well; and ρ_0i＝eN_Di-eN_AiIs the maximum bulk charge density, allowed by the applied doping concentration, in the depletion region of the i-th AlGaN barrier or well created by the charge sheet, N_DiAnd N_AiThe donor and acceptor concentrations in the ith AlGaN potential barrier or well, respectively, and e is the basic charge capacity; and the number of the first and second groups,

at least one of the AlGaN barriers comprises an AlGaN front barrier isolation layer, an AlGaN rear barrier isolation layer and an AlGaN main barrier which is clamped between the AlGaN front barrier isolation layer and the AlGaN rear barrier isolation layer, wherein the Al component of the AlGaN front barrier isolation layer and the Al component of the AlGaN rear barrier isolation layer are different from the Al component of the AlGaN main barrier, and the thickness of the AlGaN front barrier isolation layer and the thickness of the AlGaN rear barrier isolation layer are smaller than the thickness of the AlGaN main barrier.

17. The light emitting device of claim 16, wherein a thickness of the AlGaN front barrier spacer and a thickness of the AlGaN rear barrier spacer are in a range of 0.1nm to 1.5 nm.

18. The light emitting device of claim 16, wherein the Al composition of the AlGaN front barrier isolation layer and the Al composition of the AlGaN back barrier isolation layer are higher than the Al composition of the AlGaN main barrier.

19. The light emitting device of claim 18, wherein the AlGaN front barrier spacer and the AlGaN rear barrier spacer are made of AlN and have thicknesses in the range of 0.26-0.52nm, respectively.

20. The light emitting device of claim 16, wherein the Al composition of the AlGaN front barrier isolation layer and the Al composition of the AlGaN rear barrier isolation layer are lower than the Al composition of an adjacent AlGaN potential well.

21. The light emitting device of claim 20, wherein the AlGaN front barrier spacer layer and the AlGaN rear barrier spacer layer are made of GaN and have thicknesses in a range of 0.1-0.52nm, respectively.

22. The light emitting device of claim 16, wherein the Al composition of the AlGaN front barrier spacer is higher than the Al composition of the AlGaN main barrier and the Al composition of the AlGaN rear barrier spacer is lower than the Al composition of an adjacent AlGaN potential well; or the Al component of the AlGaN back barrier isolation layer is higher than the Al component of the AlGaN main barrier, and the Al component of the AlGaN front barrier isolation layer is lower than the Al component of an adjacent AlGaN potential well.

23. The light emitting device of claim 16, wherein the p-type heterostructure further comprises another p-type doped AlGaN barrier on which the alternating stack of p-type doped AlGaN barriers and p-type doped AlGaN potential wells are formed, wherein the another p-type doped AlGaN barrier comprises a main barrier in contact with a last quantum barrier of the MQW active region of the light emitting device, and a back barrier isolation layer on which one of the alternating stack of p-type doped AlGaN barriers and p-type doped AlGaN potential wells is formed.