CN113707705A - OLED display, preparation method thereof and QLED display - Google Patents

OLED display, preparation method thereof and QLED display Download PDF

Info

Publication number
CN113707705A
CN113707705A CN202111027504.9A CN202111027504A CN113707705A CN 113707705 A CN113707705 A CN 113707705A CN 202111027504 A CN202111027504 A CN 202111027504A CN 113707705 A CN113707705 A CN 113707705A
Authority
CN
China
Prior art keywords
anode
layer
silicon
pixel electrode
emitting layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202111027504.9A
Other languages
Chinese (zh)
Inventor
朱舒卷
何军
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nanjing Xinshiyuan Electronics Co ltd
Original Assignee
Nanjing Xinshiyuan Electronics Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanjing Xinshiyuan Electronics Co ltd filed Critical Nanjing Xinshiyuan Electronics Co ltd
Priority to CN202111027504.9A priority Critical patent/CN113707705A/en
Publication of CN113707705A publication Critical patent/CN113707705A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

An OLED display, a preparation method thereof and a QLED display relate to the technical field of display. The OLED display comprises a silicon-based CMOS driving chip, an OLED device and an encapsulation structure for encapsulating the OLED device on the silicon-based CMOS driving chip; the silicon-based CMOS driving chip comprises a silicon-based driving substrate, a driving circuit layer, a pixel electrode and a first anode, wherein the driving circuit layer is positioned on the silicon-based driving substrate, and the pixel electrode and the first anode are arranged on the driving circuit layer at intervals; the OLED device comprises at least one light emitting layer positioned on the pixel electrode and a second anode positioned on the light emitting layer and in ohmic contact with the first anode; the pixel electrode is used as a cathode of the OLED device, and light beams emitted from the light emitting layer sequentially penetrate through the second anode and the packaging structure to be emitted. The OLED display does not need an anodizing process, can improve the process yield and shorten the process steps.

Description

OLED display, preparation method thereof and QLED display
Technical Field
The disclosure relates to the technical field of display, in particular to an OLED display, a preparation method thereof and a QLED display.
Background
A silicon-based OLED (Organic Light Emitting Diode) microdisplay is a new display technology for fabricating an active Light Emitting device OLED on a silicon-based CMOS driving chip. Due to its advantages of high integration, micron-scale pixel size, low power consumption, etc., it is widely focused in the field of near-to-eye display. Currently, silicon-based OLED micro-displays are widely used in military fields such as gun sights, night vision devices, and helmet-mounted helmets, and consumer electronics fields represented by AR/VR, which can bring unprecedented visual experience to users, and are called black horses of next generation display technologies.
The top process metal of the conventional CMOS driving circuit substrate generally only includes metal aluminum, tungsten and titanium, and considering the problem of energy level matching of the OLED device, the material of the top process metal of the conventional CMOS driving circuit substrate is not suitable for being used as the anode material of the structure of the OLED device, so that the subsequent anodization process is usually performed on the CMOS driving circuit substrate. Currently, a common post-anodization process is the deposition of one or more layers of material on a CMOS device structure. However, in the way of adopting the subsequent anodization process, firstly, the process is complex, and the problems of thermal expansion coefficient, functional function, lattice parameter and the like among materials of each layer need to be considered in the deposition process so as to avoid the problems of uneven film formation, falling off or low luminous efficiency and the like; secondly, since the pixel size of the OLED display is small, a subsequent manufacturer is required to separately prepare a yellow light process according to the CMOS driving circuit substrate to manufacture a suitable anode of the OLED device, which results in an increase in production cost.
Disclosure of Invention
The invention aims to provide an OLED display, a preparation method thereof and a QLED display, wherein an anodizing process is not needed, the process yield can be improved, and the process steps can be shortened.
The embodiment of the disclosure is realized by the following steps:
in one aspect of the present disclosure, an OLED display is provided, which includes a silicon-based CMOS driving chip, an OLED device, and an encapsulation structure for encapsulating the OLED device on the silicon-based CMOS driving chip; the silicon-based CMOS driving chip comprises a silicon-based driving substrate, a driving circuit layer, a pixel electrode and a first anode, wherein the driving circuit layer is positioned on the silicon-based driving substrate, and the pixel electrode and the first anode are arranged on the driving circuit layer at intervals; the OLED device comprises at least one light emitting layer positioned on the pixel electrode and a second anode positioned on the light emitting layer and in ohmic contact with the first anode; the pixel electrode is used as a cathode of the OLED device, and light beams emitted from the light emitting layer sequentially penetrate through the second anode and the packaging structure to be emitted. The OLED display does not need an anodizing process, can improve the process yield and shorten the process steps.
Optionally, the material of the second anode is a transparent material.
Optionally, the material of the second anode is any one of indium zinc oxide, indium tin oxide, and aluminum-doped zinc oxide.
Optionally, the material of the pixel electrode is any one of aluminum and titanium nitride or a combination of the two.
Optionally, the light emitting layer is a single layer, and the OLED device further includes an electron injection layer and an electron transport layer between the pixel electrode and the light emitting layer, and a hole transport layer and a hole injection layer between the light emitting layer and the second anode.
Alternatively, the material of the light-emitting layer is any one of a fluorescent material and a phosphorescent material.
Optionally, the thickness of the light emitting layer is between 10nm and 15 nm.
Optionally, the encapsulation structure is a film layer, a glass cover plate or a stack of a film layer on the second anode and a glass cover plate on the film layer.
Optionally, a distance between the first anode and the pixel electrode is greater than or equal to 500 μm.
In another aspect of the present disclosure, a QLED display is provided, which includes a silicon-based CMOS driving chip, a QLED layer, and a packaging structure for packaging the QLED layer on the silicon-based CMOS driving chip; the silicon-based CMOS driving chip comprises a silicon-based driving substrate, a driving circuit layer, a pixel electrode and a first anode, wherein the driving circuit layer is positioned on the silicon-based driving substrate, and the pixel electrode and the first anode are arranged on the driving circuit layer at intervals; the QLED layer comprises at least one quantum dot light-emitting layer positioned on the pixel electrode and a third anode positioned on the quantum dot light-emitting layer and in ohmic contact with the first anode; the pixel electrode is used as a cathode of the QLED layer, and light beams emitted from the quantum dot light-emitting layer sequentially penetrate through the third anode and the packaging structure to be emitted.
In another aspect of the present disclosure, there is provided a method of manufacturing an OLED display, the method including: providing a silicon-based CMOS driving chip, wherein the silicon-based CMOS driving chip comprises a silicon-based driving substrate, a driving circuit layer formed on the silicon-based driving substrate, and a pixel electrode and a first anode which are formed on the driving circuit layer at intervals; shielding part of the first anode by a mask plate, and forming an electron injection layer covering the pixel electrode and the exposed first anode on the silicon-based CMOS driving chip by an evaporation process; the exposed first anode is shielded by a mask plate, an electron transport layer, a light emitting layer, a hole transport layer and a hole injection layer are sequentially formed on the electron injection layer through an evaporation process, and orthographic projections of the electron injection layer, the electron transport layer, the light emitting layer, the hole transport layer and the hole injection layer on the silicon-based CMOS driving chip respectively are provided with windows exposing part of the first anode; depositing a second anode on the hole injection layer, wherein the second anode penetrates through the window to be in contact connection with the first anode, and the electron injection layer, the electron transport layer, the light-emitting layer, the hole transport layer, the hole injection layer and the second anode form an OLED device together; and packaging the OLED device on the silicon-based CMOS driving chip through the packaging structure.
The beneficial effects of this disclosure include:
the OLED display comprises a silicon-based CMOS driving chip, an OLED device and an encapsulation structure for encapsulating the OLED device on the silicon-based CMOS driving chip; the silicon-based CMOS driving chip comprises a silicon-based driving substrate, a driving circuit layer, a pixel electrode and a first anode, wherein the driving circuit layer is positioned on the silicon-based driving substrate, and the pixel electrode and the first anode are arranged on the driving circuit layer at intervals; the OLED device comprises at least one light emitting layer positioned on the pixel electrode and a second anode positioned on the light emitting layer and in ohmic contact with the first anode; the pixel electrode is used as a cathode of the OLED device, and light beams emitted from the light emitting layer sequentially penetrate through the second anode and the packaging structure to be emitted. According to the OLED display, the OLED device is inversely arranged on the silicon-based CMOS driving chip, and the pixel electrode of the silicon-based CMOS driving chip is used as the cathode of the OLED device, so that various problems caused by uneven film forming, falling, low luminous efficiency, complex process and the like caused by the fact that a subsequent anodizing process is required to be carried out on the CMOS chip when the OLED device is packaged on the CMOS chip in the prior art can be avoided, the difficulty of the preparation process of the OLED display is greatly reduced, the production yield is improved, the process steps are shortened, and the preparation efficiency is improved.
Drawings
To more clearly illustrate the technical solutions of the embodiments of the present disclosure, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present disclosure and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings may be obtained from the drawings without inventive effort.
FIG. 1 is a schematic structural diagram of an OLED display provided in the present invention;
FIG. 2 is a schematic flow chart of a method for fabricating an OLED display according to the present invention;
FIG. 3 is a schematic view of a process for fabricating an OLED display according to the present invention;
FIG. 4 is a second schematic view illustrating a manufacturing process of an OLED display according to the present invention;
FIG. 5 is a third schematic view illustrating a manufacturing process of an OLED display according to the present invention;
FIG. 6 is a fourth schematic view illustrating a manufacturing process of an OLED display according to the present invention.
Icon: 10-silicon-based CMOS driving chip; 11-a silicon-based drive substrate; 12-a drive circuit layer; 13-pixel electrode; 14-a first anode; 20-an OLED device; 21-electron injection layer; 22-electron transport layer; 23-a light-emitting layer; 24-a hole transport layer; 25-a hole injection layer; 26-a second anode; 27-a window; 30-a package structure; 40-isolation structures.
Detailed Description
The embodiments set forth below represent the necessary information to enable those skilled in the art to practice the embodiments and illustrate the best mode of practicing the embodiments. Upon reading the following description in light of the accompanying drawing figures, those skilled in the art will understand the concepts of the disclosure and will recognize applications of these concepts not particularly addressed herein. It should be understood that these concepts and applications fall within the scope of the disclosure and the accompanying claims.
It will be understood that, although the terms first, second, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of the present disclosure. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
It will be understood that when an element such as a layer, region or substrate is referred to as being "on" or "extending" onto "another element, it can be directly on or extend directly onto the other element or intervening elements may also be present. In contrast, when an element is referred to as being "directly on" or extending "directly onto" another element, there are no intervening elements present. Also, it will be understood that when an element such as a layer, region or substrate is referred to as being "on" or "extending over" another element, it can be directly on or extend directly over the other element or intervening elements may also be present. In contrast, when an element is referred to as being "directly on" or extending "directly over" another element, there are no intervening elements present. It will also be understood that when an element is referred to as being "connected" or "coupled" to another element, it can be directly connected or coupled to the other element or intervening elements may be present. In contrast, when an element is referred to as being "directly connected" or "directly coupled" to another element, there are no intervening elements present.
Relative terms such as "below …" or "above …" or "upper" or "lower" or "horizontal" or "vertical" may be used herein to describe one element, layer or region's relationship to another element, layer or region as illustrated in the figures. It will be understood that these terms and those discussed above are intended to encompass different orientations of the device in addition to the orientation depicted in the figures.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used herein, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. It will be further understood that terms used herein should be interpreted as having a meaning that is consistent with their meaning in the context of this specification and the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
Referring to fig. 1, the present embodiment provides an OLED display, which includes a silicon-based CMOS driving chip 10, an OLED device 20, and an encapsulation structure 30 for encapsulating the OLED device 20 on the silicon-based CMOS driving chip 10; the silicon-based CMOS driving chip 10 includes a silicon-based driving substrate 11, a driving circuit layer 12 located on the silicon-based driving substrate 11, and a pixel electrode 13 and a first anode 14 which are arranged on the driving circuit layer 12 at intervals; the OLED device 20 includes at least one light emitting layer 23 on the pixel electrode 13 and a second anode 26 on the light emitting layer 23 and in ohmic contact with the first anode 14; the pixel electrode 13 serves as a cathode of the OLED device 20, and a light beam emitted from the light-emitting layer 23 sequentially exits through the second anode 26 and the encapsulation structure 30.
In this embodiment, the silicon-based CMOS driver chip 10 is a reflective driver chip, and the structure of the silicon-based CMOS driver chip 10 can be seen from fig. 1, where the silicon-based CMOS driver chip 10 includes a silicon-based driver substrate 11, a driver circuit layer 12 located on the silicon-based driver substrate 11, and a pixel electrode 13 and a first anode 14 located on the driver circuit layer 12. The pixel electrode 13 and the first anode 14 are disposed at an interval, and optionally, a distance between the first anode 14 and the pixel electrode 13 is greater than or equal to 500 μm. For example, the distance between the first anode electrode 14 and the pixel electrode 13 may be 500 μm, 600 μm, 700 μm, 800 μm, or the like.
In order to avoid electrical connection between the first anode 14 and the pixel electrode 13, in the present embodiment, a separation structure 40 may be disposed between the first anode 14 and the pixel electrode 13, as shown in fig. 1. For example, an insulating layer may be formed between the first anode electrode 14 and the pixel electrode 13 as the isolation structure 40 as long as the first anode electrode 14 and the pixel electrode 13 can be electrically isolated.
In the present embodiment, the material of the pixel electrode 13 is generally selected to be an electrode material with a higher reflectivity and a lower function. Illustratively, the material of the pixel electrode 13 may be any one of aluminum and titanium nitride or a combination of both. It should be noted that when the material of the pixel electrode 13 is a combination of aluminum and titanium nitride, the pixel electrode 13 may have a laminated structure, that is, include an aluminum layer disposed adjacent to the driving circuit layer 12 and a titanium nitride layer disposed on the aluminum layer. When the pixel electrode 13 is made of aluminum, the metal aluminum with low function is used as the cathode of the OLED device 20, so that the OLED device has good electron injection capability; in addition, the aluminum material may also improve the light extraction efficiency of the OLED device 20 due to its high reflectivity. The metal aluminum is directly adopted as the material of the pixel electrode 13 and the first anode 14, and each layer of the OLED device 20 can be directly evaporated on the pixel electrode 13 without an anodization process, so that the equipment cost and the production cost are greatly reduced.
Also, the material of the first anode 14 may be a metal material or a non-metal material (e.g., titanium nitride, etc.) having ohmic characteristics.
As shown in fig. 1, the OLED device 20 is located on the silicon-based CMOS driving chip 10, and the OLED device 20 includes at least one light emitting layer 23 and a second anode 26 located on the light emitting layer 23, wherein, in the present embodiment, the pixel electrode 13 of the silicon-based CMOS driving chip 10 is used as a cathode of the OLED device 20, the light emitting layer 23 is located between the cathode and the second anode 26, and the second anode 26 is in ohmic contact with the first anode 14. Thus, when the light-emitting layer 23 is supplied with a driving voltage required for light emission through the pixel electrode 13 and the second anode 26, a light beam emitted from the light-emitting layer 23 can sequentially pass through the first anode 14 and the encapsulation structure 30 to complete the display.
It should be understood that, in the present embodiment, the material of the second anode 26 may be a transparent material with a higher transmittance, since the light beam needs to transmit through the second anode 26 and the package structure 30 to complete the display. Illustratively, the material of the second anode 26 may be any one of indium zinc oxide, indium tin oxide, and aluminum-doped zinc oxide.
In the present embodiment, the encapsulation structure 30 is used to encapsulate the OLED device 20 on the silicon-based CMOS driving chip 10, and in particular, the form of the encapsulation structure 30 is not limited in the present application. By way of example, the package structure 30 may be in any of three forms: a film layer, a glass cover plate, or a stack of a film layer on the second anode 26 and a glass cover plate on the film layer. The specific packaging form adopted in the present application is not limited, and those skilled in the art can select the packaging form according to actual needs.
In summary, the OLED display provided in the present application includes a silicon-based CMOS driving chip 10, an OLED device 20, and an encapsulation structure 30 for encapsulating the OLED device 20 on the silicon-based CMOS driving chip 10; the silicon-based CMOS driving chip 10 includes a silicon-based driving substrate 11, a driving circuit layer 12 located on the silicon-based driving substrate 11, and a pixel electrode 13 and a first anode 14 which are arranged on the driving circuit layer 12 at intervals; the OLED device 20 includes at least one light emitting layer 23 on the pixel electrode 13 and a second anode 26 on the light emitting layer 23 and in ohmic contact with the first anode 14; the pixel electrode 13 serves as a cathode of the OLED device 20, and a light beam emitted from the light-emitting layer 23 sequentially exits through the second anode 26 and the encapsulation structure 30. According to the OLED display, the OLED device 20 is inversely arranged on the silicon-based CMOS driving chip 10, and the pixel electrode 13 of the silicon-based CMOS driving chip 10 is used as the cathode of the OLED device 20, so that various problems caused by uneven film forming, falling, low luminous efficiency, complex process and the like caused by the fact that a subsequent anodizing process needs to be carried out on the CMOS chip when the OLED device 20 is packaged on the CMOS chip in the prior art can be avoided, the difficulty of the preparation process of the OLED display is greatly reduced, the production yield is improved, the process steps are shortened, and the preparation efficiency is improved.
In the present embodiment, the light emitting layer 23 may be a single layer or a plurality of layers, specifically, according to actual requirements. Illustratively, when the light emitting layer 23 is a single layer, the OLED device 20 further includes an electron injection layer 21 and an electron transport layer 22 between the pixel electrode 13 and the light emitting layer 23, and a hole transport layer 24 and a hole injection layer 25 between the light emitting layer 23 and the second anode 26.
That is, as shown in fig. 1, the OLED device 20 includes an electron injection layer 21, an electron transport layer 22, an emission layer 23, a hole transport layer 24, and a hole injection layer 25, which are sequentially formed on the pixel electrode 13. Wherein, optionally, the material of the electron injection layer 21 may be an inorganic electron injection material or an organic electron injection material. When the material of the electron injection layer 21 is an inorganic electron injection material, it may be, for example, LiF (lithium fluoride), NaF (sodium fluoride), MgF2(magnesium fluoride); when the material of the electron injection layer 21 is an organic electron injection material, for example, PMMA (polymethyl methacrylate), PhCOOLi (lithium benzoate), or the like may be used. Also, in the present embodiment, the thickness of the electron injection layer 21 may be between 20nm and 30 nm.
The material of the electron transport layer 22 may be Alq3 (aluminum hydroxyquinoline), TPBI (1,3, 5-tris (1-phenyl-1H-benzimidazol-2-yl) benzene), BCP (2, 9-dimethyl-4, 7-diphenyl-1, 10-phenanthroline), or the like. The thickness of the electron transport layer 22 may be between 20nm and 40 nm.
In the present embodiment, the material of the light emitting layer 23 may be any one of a fluorescent material, a phosphorescent material, TADF (thermally activated delayed fluorescence), and the like. In this embodiment, highly efficient phosphorescent materials are used, for example: pyridine derivative or benzo nitrogen-containing five-membered heterocyclic ligand and the like. Optionally, the thickness of the light emitting layer 23 is between 10nm and 15 nm.
As the material of the hole transport layer 24, TPD (phenyl benzidine derivative), NPB (triphenylamine), PVK (polyvinylcarbazole), or the like can be used. In the present embodiment, the thickness of the hole transport layer 24 is between 40nm and 60 nm.
As the material of the hole injection layer 25, TiOPc (titanyl phthalocyanine), m-MTDATA (triphenylamine), 2-TNATA (triphenylamine), or the like can be used. Wherein the thickness of the hole injection layer 25 is between 6nm and 10 nm.
The layers of the OLED device 20 may be formed by deposition through evaporation or inkjet printing, and the materials of the above examples are selected for each layer of the OLED device 20, so that the barrier between the layers is small, and the requirement of energy level matching is met.
In another aspect of the present disclosure, a QLED display is provided, which includes a silicon-based CMOS driving chip 10, a QLED layer, and a packaging structure 30 for packaging the QLED layer on the silicon-based CMOS driving chip 10; the silicon-based CMOS driving chip 10 includes a silicon-based driving substrate 11, a driving circuit layer 12 located on the silicon-based driving substrate 11, and a pixel electrode 13 and a first anode 14 which are arranged on the driving circuit layer 12 at intervals; the QLED layer includes at least one quantum dot light emitting layer on the pixel electrode 13 and a third anode on the quantum dot light emitting layer and in ohmic contact with the first anode 14; the pixel electrode 13 serves as a cathode of the QLED layer, and light beams emitted from the quantum dot light emitting layer sequentially pass through the third anode and the encapsulation structure 30 to be emitted.
The QLED display provided in the present embodiment is different from the OLED display in the foregoing, in that the material of the light-emitting layer 23 in the present application is different from the material of the light-emitting layer 23 in the OLED display. The material of the light emitting layer 23 of the OLED display is any one of a fluorescent material, a phosphorescent material, TADF (thermally activated delayed fluorescence), and the like; the light-emitting layer 23 of the QLED display provided in this embodiment is a quantum dot light-emitting layer.
It should be noted that the other parts of the OLED display except the light emitting layer 23 can be shared (shared here means that the related description and illustration of the same parts can be shared) without contradiction with the QLED display provided in the present application, and in order to avoid repeated illustration, the description of the same parts of the QLED display and the OLED display in the present application is not repeated.
Referring to fig. 2, in another aspect of the present disclosure, a method for manufacturing an OLED display is provided, the method comprising:
s100, providing a silicon-based CMOS driving chip 10, where the silicon-based CMOS driving chip 10 includes a silicon-based driving substrate 11, a driving circuit layer 12 formed on the silicon-based driving substrate 11, and a pixel electrode 13 and a first anode 14 formed on the driving circuit layer 12 at an interval, as shown in fig. 3.
The pixel electrode 13 and the first anode 14 are spaced apart from each other. Illustratively, the distance between the pixel electrode 13 and the first anode 14 is greater than or equal to 500 μm. In an alternative embodiment, a separation structure 40 may be further disposed between the pixel electrode 13 and the first anode 14. The material of the isolation structure 40 may be an insulating material.
It should be noted that the structure, the material of each part, and the corresponding beneficial effects of the silicon-based CMOS driving chip 10 are the same as those of the silicon-based CMOS driving chip 10 of the OLED display described above, and therefore, the details are not repeated herein.
S200, shielding part of the first anode 14 by a mask, and forming an electron injection layer 21 covering the pixel electrode 13 and the exposed first anode 14 on the silicon-based CMOS driving chip 10 by an evaporation process, as shown in fig. 4.
In this embodiment, before performing step S200, a cleaning step for the silicon-based CMOS driver chip 10 is further included. Illustratively, the silicon-based CMOS driving chip 10 is firstly cleaned with deionized water; cleaning the silicon-based CMOS driving chip 10 by using acetone; and then, after drying by using nitrogen, baking the silicon-based CMOS driving chip 10 in a vacuum oven at 120 ℃ for 1 to 1.5 hours.
Here, the exposed first anode 14 is a portion of the first anode 14 that is not masked by the reticle.
S300, shielding the exposed first anode 14 through a mask, and sequentially forming an electron transport layer 22, a light emitting layer 23, a hole transport layer 24 and a hole injection layer 25 on the electron injection layer 21 through an evaporation process, wherein orthographic projections of the electron injection layer 21, the electron transport layer 22, the light emitting layer 23, the hole transport layer 24 and the hole injection layer 25 on the silicon-based CMOS driving chip 10 respectively have a window 27 exposing a part of the first anode 14, as shown in FIG. 5.
When the electron injection layer 21, the electron transport layer 22, the light emitting layer 23, the hole transport layer 24, and the hole injection layer 25 are formed on the silicon-based CMOS driver chip 10, they may be formed in a vacuum coater in a degree of vacuum of 1 × 10-6Pa to 5X 10-6And Pa are formed in sequence by an evaporation process.
In step S300, the portion of the exposed first anode 14 shielded by the reticle is the portion of the first anode 14 located at the bottom of the window 27 in step S200. The orthographic projections of the electron injection layer 21, the electron transport layer 22, the light emitting layer 23, the hole transport layer 24 and the hole injection layer 25 on the silicon-based CMOS driver chip 10 respectively have windows 27 exposing a portion of the first anode 14, so that the structure shown in fig. 5 can be obtained.
Wherein the window 27 is used for depositing the second anode 26 of the OLED device 20 in a subsequent step, so that the second anode 26 forms an ohmic contact with the first anode 14 of the silicon-based CMOS driving chip 10.
S400, depositing a second anode 26 on the hole injection layer 25, wherein the second anode 26 is connected to the first anode 14 through the window 27, and the electron injection layer 21, the electron transport layer 22, the light emitting layer 23, the hole transport layer 24, the hole injection layer 25 and the second anode 26 together form the OLED device 20, as shown in fig. 6.
To avoid the sputtering process from damaging OLED device 20, in this embodiment, PLD (pulsed laser deposition) technology is used to form second anode 26 by deposition of AZO (transparent conductive oxide) material. The thickness of the second anode 26 is between 20nm and 50nm, and the second anode 26 is made of a material with a transmittance of more than 70%.
And S500, packaging the OLED device 20 on the silicon-based CMOS driving chip 10 through the packaging structure 30, as shown in FIG. 1.
The encapsulation structure 30 may be any one of a film layer, a glass cover plate, or a stack of a film layer on the second anode 26 and a glass cover plate on the film layer.
It should be noted that the OLED display provided in this embodiment is prepared in a manner that is used for preparing the OLED display in the foregoing, and therefore, the structure of each layer involved in the OLED display in the foregoing and the parameters and technical effects corresponding to each layer are the same as those of the preparation method. Therefore, in order to avoid repetition, the same portions of the manufacturing method as those of the OLED display described above will not be described again.
The foregoing is illustrative of only alternative embodiments of the present disclosure and is not intended to limit the disclosure, which may be modified and varied by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present disclosure should be included in the protection scope of the present disclosure.
It should be noted that, in the foregoing embodiments, various features described in the above embodiments may be combined in any suitable manner, and in order to avoid unnecessary repetition, various combinations that are possible in the present disclosure are not described again.

Claims (11)

1. The OLED display is characterized by comprising a silicon-based CMOS driving chip, an OLED device and an encapsulation structure for encapsulating the OLED device on the silicon-based CMOS driving chip;
the silicon-based CMOS driving chip comprises a silicon-based driving substrate, a driving circuit layer, a pixel electrode and a first anode, wherein the driving circuit layer is positioned on the silicon-based driving substrate, and the pixel electrode and the first anode are arranged on the driving circuit layer at intervals; the OLED device comprises at least one light emitting layer on the pixel electrode and a second anode on the light emitting layer and in ohmic contact with the first anode; the pixel electrode is used as a cathode of the OLED device, and light beams emitted from the light emitting layer sequentially penetrate through the second anode and the packaging structure to be emitted.
2. The OLED display claimed in claim 1, wherein the material of the second anode is a transparent material.
3. The OLED display device claimed in claim 1 or 2, wherein the material of the second anode is any one of indium zinc oxide, indium tin oxide, and aluminum-doped zinc oxide.
4. The OLED display of claim 1, wherein the material of the pixel electrode is any one of aluminum and titanium nitride or a combination of the two.
5. The OLED display device claimed in claim 1, wherein the light emitting layer is a single layer, the OLED device further comprising an electron injection layer and an electron transport layer between the pixel electrode and the light emitting layer, and a hole transport layer and a hole injection layer between the light emitting layer and the second anode.
6. The OLED display according to claim 5, wherein the material of the light emitting layer is any one of a fluorescent material and a phosphorescent material.
7. The OLED display of claim 5 or 6, wherein the light-emitting layer has a thickness of between 10nm and 15 nm.
8. The OLED display of claim 1, wherein the encapsulation structure is a film layer, a glass cover plate, or a stack of the film layer on the second anode and the glass cover plate on the film layer.
9. The OLED display claimed in claim 1, wherein a distance between the first anode and the pixel electrode is greater than or equal to 500 μm.
10. A QLED display is characterized by comprising a silicon-based CMOS driving chip, a QLED layer and a packaging structure for packaging the QLED layer on the silicon-based CMOS driving chip;
the silicon-based CMOS driving chip comprises a silicon-based driving substrate, a driving circuit layer, a pixel electrode and a first anode, wherein the driving circuit layer is positioned on the silicon-based driving substrate, and the pixel electrode and the first anode are arranged on the driving circuit layer at intervals; the QLED layer comprises at least one quantum dot light-emitting layer on the pixel electrode and a third anode on the quantum dot light-emitting layer and in ohmic contact with the first anode; the pixel electrode is used as a cathode of the QLED layer, and light beams emitted from the quantum dot light-emitting layer sequentially penetrate through the third anode and the packaging structure to be emitted.
11. A method for manufacturing an OLED display, the method comprising:
providing a silicon-based CMOS driving chip, wherein the silicon-based CMOS driving chip comprises a silicon-based driving substrate, a driving circuit layer formed on the silicon-based driving substrate, and a pixel electrode and a first anode which are formed on the driving circuit layer at intervals;
shielding part of the first anode by a mask, and forming an electron injection layer covering the pixel electrode and the exposed first anode on the silicon-based CMOS driving chip by an evaporation process;
shielding the exposed first anode by the mask plate, and sequentially forming an electron transport layer, a light emitting layer, a hole transport layer and a hole injection layer on the electron injection layer by an evaporation process, wherein orthographic projections of the electron injection layer, the electron transport layer, the light emitting layer, the hole transport layer and the hole injection layer on the silicon-based CMOS driving chip respectively are provided with windows for exposing part of the first anode;
depositing a second anode on the hole injection layer, the second anode contacting the first anode through the window, the electron injection layer, the electron transport layer, the light emitting layer, the hole transport layer, and the hole injection layer and the second anode collectively forming an OLED device;
and packaging the OLED device on the silicon-based CMOS driving chip through a packaging structure.
CN202111027504.9A 2021-09-02 2021-09-02 OLED display, preparation method thereof and QLED display Pending CN113707705A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202111027504.9A CN113707705A (en) 2021-09-02 2021-09-02 OLED display, preparation method thereof and QLED display

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202111027504.9A CN113707705A (en) 2021-09-02 2021-09-02 OLED display, preparation method thereof and QLED display

Publications (1)

Publication Number Publication Date
CN113707705A true CN113707705A (en) 2021-11-26

Family

ID=78657483

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202111027504.9A Pending CN113707705A (en) 2021-09-02 2021-09-02 OLED display, preparation method thereof and QLED display

Country Status (1)

Country Link
CN (1) CN113707705A (en)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1453883A (en) * 2002-04-24 2003-11-05 株式会社半导体能源研究所 Semiconductor device and producing method thereof
CN1881564A (en) * 2001-01-17 2006-12-20 株式会社半导体能源研究所 Luminescent device and method of manufacturing same
CN108538890A (en) * 2018-04-20 2018-09-14 深圳市华星光电技术有限公司 A kind of organic light-emitting display device
CN110534660A (en) * 2019-08-30 2019-12-03 合肥鑫晟光电科技有限公司 A kind of display base plate and preparation method, display device
WO2020134162A1 (en) * 2018-12-28 2020-07-02 Tcl科技集团股份有限公司 Quantum dot light-emitting diode and preparation method thereof
CN111564481A (en) * 2020-05-21 2020-08-21 京东方科技集团股份有限公司 Display substrate, manufacturing method thereof and display device
CN111668158A (en) * 2020-06-15 2020-09-15 京东方科技集团股份有限公司 Display substrate, preparation method thereof and display device

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1881564A (en) * 2001-01-17 2006-12-20 株式会社半导体能源研究所 Luminescent device and method of manufacturing same
CN1453883A (en) * 2002-04-24 2003-11-05 株式会社半导体能源研究所 Semiconductor device and producing method thereof
CN108538890A (en) * 2018-04-20 2018-09-14 深圳市华星光电技术有限公司 A kind of organic light-emitting display device
WO2020134162A1 (en) * 2018-12-28 2020-07-02 Tcl科技集团股份有限公司 Quantum dot light-emitting diode and preparation method thereof
CN110534660A (en) * 2019-08-30 2019-12-03 合肥鑫晟光电科技有限公司 A kind of display base plate and preparation method, display device
CN111564481A (en) * 2020-05-21 2020-08-21 京东方科技集团股份有限公司 Display substrate, manufacturing method thereof and display device
CN111668158A (en) * 2020-06-15 2020-09-15 京东方科技集团股份有限公司 Display substrate, preparation method thereof and display device

Similar Documents

Publication Publication Date Title
KR102113946B1 (en) Non-common capping layer on an organic device
KR102596065B1 (en) Organic light emitting display device and method of the same
US8680543B2 (en) Light Emitting Element Having a Capping Layer on an Electrode, Light Emitting Device Having the Same and Method for Manufacturing the Same
US5998803A (en) Organic light emitting device containing a hole injection enhancement layer
US6469437B1 (en) Highly transparent organic light emitting device employing a non-metallic cathode
KR101825642B1 (en) Organic light emitting diode display and manufacturing method thereof
US7667388B2 (en) Organic electroluminescent display device and method for fabricating the same
US8981640B2 (en) Simplified patterned light panel
US20080265757A1 (en) Low Index Grids (LIG) To Increase Outcoupled Light From Top or Transparent OLED
US9508957B2 (en) OLED with improved light outcoupling
JP4596976B2 (en) Organic light emitting display
US20080238310A1 (en) OLED with improved light outcoupling
US20060049419A1 (en) Light emitting diode device
KR101251639B1 (en) Organic electroluminescent device and display device
JP2001052878A (en) Transparent cathode and organic light emitting diode including the same
CN106601770A (en) Organic light emitting display
US11362310B2 (en) Organic light-emitting devices using a low refractive index dielectric
US10674573B2 (en) Light emission device with anisotropic properties
CN112186124A (en) Organic light emitting diode and display panel
JP4927423B2 (en) Light emitting device and manufacturing method thereof
KR101383454B1 (en) Light emitting device
KR20150037708A (en) Organic light emitting device
KR101383490B1 (en) Light emitting device
CN113707705A (en) OLED display, preparation method thereof and QLED display
KR101670659B1 (en) Method for preparing organic light emitting device

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination