CN113707552A - Etching method of concave structure and concave structure - Google Patents
Etching method of concave structure and concave structure Download PDFInfo
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- CN113707552A CN113707552A CN202010434386.2A CN202010434386A CN113707552A CN 113707552 A CN113707552 A CN 113707552A CN 202010434386 A CN202010434386 A CN 202010434386A CN 113707552 A CN113707552 A CN 113707552A
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- 238000005530 etching Methods 0.000 title claims abstract description 149
- 238000000034 method Methods 0.000 title claims abstract description 74
- 239000000758 substrate Substances 0.000 claims abstract description 71
- 238000000151 deposition Methods 0.000 claims abstract description 66
- 230000008021 deposition Effects 0.000 claims abstract description 60
- 239000000463 material Substances 0.000 claims abstract description 44
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 14
- 239000011799 hole material Substances 0.000 claims description 14
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 7
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 7
- 239000010941 cobalt Substances 0.000 claims description 7
- 229910017052 cobalt Inorganic materials 0.000 claims description 7
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 229910052707 ruthenium Inorganic materials 0.000 claims description 7
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- 238000005498 polishing Methods 0.000 claims description 5
- 239000002210 silicon-based material Substances 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 238000000231 atomic layer deposition Methods 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 238000000708 deep reactive-ion etching Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/3086—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention relates to an etching method of a concave structure, which comprises the steps of S1, carrying out first etching on a substrate to form a first etching structure; step S2, depositing materials are adopted to form deposition layers on the side wall and the bottom of the first etching structure; step S3, destroying the deposition layer at the bottom of the first etching structure; and step S4, performing second etching on the bottom of the first etching structure to form the concave structure. The invention also relates to a concave structure prepared by adopting the etching method of the concave structure. According to the invention, the etching step of the concave structure is divided into two or more etching steps, and the deposition step is added between every two etching steps until the etching steps are reached, so that the side wall of the substrate can be effectively protected, and the concave structure with small opening and high yield is obtained.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to an etching method of a concave structure and the concave structure obtained by the method.
Background
The semiconductor field will typically involve the fabrication of recessed structures, such as vias, contacts and trenches, on a substrate. Etching methods, such as Deep Reactive Ion Etching (Deep Reactive Ion Etching), which uses passivation, are commonly used in the fabrication of these recessed structuresEtching-passivation-etching process step by introducing C into the reaction chamber4F8Gas, forming a polymer film by chemical reaction for passivation, and introducing SF into the reaction chamber6And gas, and performing physical and chemical etching.
However, this method has drawbacks in that the generation of polymer is dynamic and difficult to control during etching, and the polymer passivation layer may not protect the substrate sidewalls, resulting in the sidewalls being over-etched.
Disclosure of Invention
The present invention is directed to provide a method for etching a recessed structure, which is easy to control and can effectively protect the sidewall of a substrate, thereby obtaining a recessed structure with a small opening and a high yield.
The technical scheme adopted by the invention for solving the technical problems is as follows: an etching method for constructing a concave structure comprises the following steps:
step S1, carrying out first etching on the substrate to form a first etching structure;
step S2, depositing materials are adopted to form deposition layers on the side wall and the bottom of the first etching structure;
step S3, destroying the deposition layer at the bottom of the first etching structure;
and step S4, performing second etching on the bottom of the first etching structure to form the concave structure.
In the etching method of the concave structure, the etching rate of the deposition material is lower than that of the substrate.
In the etching method of the concave structure, the substrate is a silicon-based material, and the deposition material is titanium nitride, titanium, tantalum nitride, ruthenium, nickel or cobalt.
In the etching method of the concave structure, the thickness range of the deposition layer is 1 angstrom-10 nanometers.
In the etching method of the recess structure of the present invention, further comprising:
step S5, forming a lining layer on the concave structure by adopting lining layer materials, filling the concave structure by adopting through hole materials and carrying out polishing treatment;
wherein the deposition material is the same as the liner material.
In the etching method of the recess structure, the step S1 further includes:
step S11, determining the etching times and each etching depth according to the depth of the concave structure and the substrate component arranged near the concave structure;
step S12, arranging a mask on the substrate;
and step S13, carrying out first etching on the substrate according to the first etching depth to form a first etching structure.
In the etching method of the recess structure, the step S11 further includes:
step S111, when judging whether the substrate component is arranged near the recessed structure, if so, determining an upper area, a middle area and a lower area of the recessed structure based on the height of the substrate component, the depth of the recessed structure and the position of the lining layer, otherwise, determining the upper area, the middle area and the lower area of the recessed structure based on the depth of the recessed structure and the position of the lining layer;
step S112, setting the first etching depth in the middle region and the second etching depth in the lower region.
In the etching method of the recessed structure, the deposition layer is located in the upper region of the recessed structure; the sum of the thickness of the deposition layer and the thickness of the liner layer is greater than the thickness of the liner layer in the lower region.
The method for etching the recessed structure further comprises returning to step S2 after the second etching is finished, and repeatedly executing steps S2 to S4 until the target depth of the recessed structure is reached.
The technical scheme adopted by the invention for solving the technical problems is as follows: and constructing a concave structure by adopting the etching method of any one concave structure.
The etching method of the concave structure is easy to control, can effectively protect the side wall of the substrate, thereby obtaining the concave structure with small opening and high yield, and is suitable for manufacturing various concave structures.
Drawings
The invention will be further described with reference to the accompanying drawings and examples, in which:
FIG. 1 is a flow chart of the steps of a preferred embodiment of the method of etching a recessed feature of the present invention;
FIG. 2 is a schematic diagram of a process of processing a substrate by the etching method for the recess structure shown in FIG. 1;
FIG. 3 is a schematic diagram of a process of forming a through hole on a substrate by etching a recess structure according to a preferred embodiment of the present invention;
FIG. 4 is a schematic diagram of a process of forming a recess structure by etching a substrate with a recess structure etching method according to another preferred embodiment of the present invention;
FIG. 5 is a schematic view of an etch depth selection without a substrate feature on the substrate;
FIG. 6 is a schematic illustration of a selection of etch depths with substrate features on the substrate;
FIG. 7 is a schematic diagram of a process of forming a recess structure by etching a substrate with a recess structure etching method according to still another preferred embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
The invention relates to an etching method of a concave structure, which comprises the steps of S1, carrying out first etching on a substrate to form a first etching structure; step S2, depositing materials are adopted to form deposition layers on the side wall and the bottom of the first etching structure; step S3, destroying the deposition layer at the bottom of the first etching structure; and step S4, performing second etching on the bottom of the first etching structure to form the concave structure. According to the invention, the etching step of the concave structure is divided into two or more etching steps, and the deposition step is added between every two etching steps until the etching steps are reached, so that the side wall of the substrate can be effectively protected, and the concave structure with small opening and high yield is obtained. Furthermore, the method is simple to operate, easy to control and suitable for manufacturing various concave structures.
Fig. 1 is a method flow diagram of a preferred embodiment of the method for etching a recessed structure of the present invention. FIG. 2 is a schematic diagram illustrating a state of a substrate after being processed by the etching method for the recess structure shown in FIG. 1.
As shown in fig. 1, in step S1, the substrate is subjected to a first etching to form a first etched structure. In the present invention, the etching may be performed by any known etching method, for example, dry etching or wet etching. Preferably, ion mill etching, plasma etching, reactive ion etching, and the like can be employed. As shown in a of fig. 2, the substrate 1 is etched for the first time to form a first recess structure 2 with a first depth. In a further preferred embodiment of the invention, the substrate 1 may be covered with a mask 6 before the first etching of the substrate. Preferably, the substrate 1 is a silicon-based material.
At step S2, a deposition layer is formed on the sidewalls and bottom of the first etched structure using a deposition material. In the present invention, any deposition method may be used, and any suitable deposition material may be selected to form a deposition layer of a suitable thickness. In the present invention, the deposited layer is provided to mask the sidewalls. Thus in a preferred embodiment of the invention, Chemical Vapor Deposition (CVD) deposition or Atomic Layer Deposition (ALD) deposition may be chosen. Preferably, the etch rate of the deposition material is lower than the etch rate of the substrate. When the substrate is a silicon-based material, the deposition material is preferably titanium nitride, titanium, tantalum nitride, ruthenium, nickel, or cobalt. When a liner layer is required to be disposed on the recessed structure, the deposition material is preferably the same as the liner layer material. After deposition with the deposition material, the entire surface of the first recess structure, including the bottom, sides, and top thereof, is covered with a thickness of the deposition layer 3, as shown in b of fig. 2. Preferably, the thickness of the deposited layer 3 may be chosen according to practical needs, for example the thickness of the deposited layer 3 is in the range of 1 angstrom-10 nm.
In step S3, the deposited layer at the bottom of the first etch structure is damaged. Referring to c in fig. 2, only the portion of the deposited layer 3 at the bottom of the first etched structure 2 is damaged. Preferably, a small opening may be selectively opened on the deposition layer 3 at the bottom of the first etched structure 2, or the entire deposition layer 3 at the bottom thereof may be completely damaged. In this process, the deposited layer 3 may be damaged by any suitable physical or chemical method, but care should be taken to prevent damage to the remaining portion of the deposited layer 3, in particular to the deposited layer 3 on the sidewalls of the first etched structure 2.
And in step S4, performing a second etching on the bottom of the first etched structure to form the recessed structure. Also, in the present invention, the etching may be performed by any known etching method, for example, dry etching or wet etching. Preferably, since the second etching is etching downward, an etching method having directionality, such as plasma etching or the like, is preferable. Referring to d in fig. 2, after the second etching, a recess structure 5 having a desired depth is formed on the substrate. In a preferred embodiment of the invention, said recessed structures 5 may be subjected to subsequent processing, so as to obtain, for example, vias, contacts, trenches, etc.
Although fig. 1-2 only show an implementation in which one deposition step is added between two etches, the invention is not so limited. In a further preferred embodiment of the present invention, after the above step S4 is completed, the process returns to step S2 to perform the second deposition and then the third etching until the desired etching depth is finally obtained, i.e., the etching-deposition-etching-deposition … -etching, according to the specific required etching depth. In a preferred embodiment of the present invention, the number of times of etching and the depth of each etching may be determined according to the depth of the recess structure and the substrate member disposed adjacent to the recess structure
According to the invention, the etching step of the concave structure is divided into two or more etching steps, and the deposition step is added between every two etching steps until the etching steps are reached, so that the side wall of the substrate can be effectively protected, and the concave structure with small opening and high yield is obtained. Furthermore, the method is simple to operate, easy to control and suitable for manufacturing various concave structures.
Fig. 3 is a schematic process diagram of the substrate being processed by the etching method of the recessed structure according to the preferred embodiment of the present invention to form a through hole. As shown in fig. 3 a, a patterned hard mask is first provided on a substrate. As mentioned above, the substrate is preferably a silicon substrate. As shown in fig. 3 b, the substrate is etched a first time to form a first etched structure having a first depth. As shown in c of fig. 3, the substrate is cleaned to remove byproducts generated during the etching process, and then a deposition layer is formed on the sidewalls and the bottom of the first etched structure using a deposition material. The deposition is preferably performed using Chemical Vapor Deposition (CVD) or Atomic Layer Deposition (ALD). The deposition material is preferably titanium nitride, titanium, tantalum nitride, ruthenium, nickel, cobalt. As shown in fig. 3 d, a hole is opened in the deposited layer at the bottom of the first etched structure. A second etch is performed on the hole at the bottom of the first etch structure until the top opening is reached to form the desired recess structure, as shown at e in fig. 3. A liner layer is formed on the bottom deposition of the recessed features using a liner layer material, as shown at f in fig. 3. The lining material is preferably titanium nitride, titanium, tantalum nitride, ruthenium, nickel, cobalt. Further, it is preferable that the liner material and the deposition material are the same. And as shown in g in fig. 3, filling the recessed structure with a through hole material, and performing polishing treatment to finally form a through hole.
In a further preferred embodiment of the present invention, the etching method of the recessed structure of the present invention can also be used for the manufacture of trenches. Firstly, etching the substrate for the first time according to the height ratio of the groove to form a first etching structure. And then forming a deposition layer on the side wall and the bottom of the first etching structure by using a deposition material. The deposited material used here is the same as the liner material to be used subsequently. Then, the deposition layer at the bottom of the first etching structure is damaged. And performing second etching on the bottom of the first etching structure until the SiGe position is reached. Epitaxial (EPI) losses are therefore experienced only once during the trench fabrication process. And finally, forming a lining layer on the bottom of the groove by adopting a lining layer material, filling the groove by adopting a filling material, and polishing.
In the prior art trench fabrication process, the trench first needs to be opened to the SiGe site, which experiences one Epitaxial (EPI) loss. SiN then needs to be deposited as a spacer. The spacers are then opened, which experiences a second Epitaxial (EPI) loss. And finally, forming a lining layer on the bottom of the groove by adopting a lining layer material, filling the groove by adopting a filling material, and polishing.
Therefore, the groove is manufactured by adopting the etching method of the concave structure, EPI (electronic pulse injection) can be saved at least once, SiN is not required to be used as a gasket, and a lower capacitance value and better performance can be obtained.
In the field of semiconductor technology, via/contact/channel processes are one of the key processes affecting device yield. The etching method of the concave structure can help to control the shape of the through hole/contact/groove, because the side wall is protected, the side wall is almost not etched and retreated any more, the opening size/diameter of the top through hole is minimized, and the yield of the device can be greatly improved.
FIG. 4 is a schematic process diagram of a substrate being processed by the etching method of the recessed structure according to another preferred embodiment of the present invention to form a recessed structure. Fig. 5 is a schematic illustration of the selection of etch depth without substrate features on the substrate. FIG. 6 is a schematic illustration of the selection of etch depths with substrate features on the substrate.
Further preferred embodiments of the present invention are described below in conjunction with fig. 4-6. As shown in fig. 4 a, a patterned hard mask is first provided on a substrate. As mentioned above, the substrate is preferably a silicon substrate. As shown in fig. 4 b, the substrate is etched for the first time to form a first etched structure having a first depth. As shown in c of fig. 4, the substrate is cleaned to remove byproducts generated during the etching process, and then a deposition layer is formed on the sidewalls and the bottom of the first etched structure using a deposition material. The deposition is preferably performed using Chemical Vapor Deposition (CVD) or Atomic Layer Deposition (ALD). The deposition material is preferably titanium nitride, titanium, tantalum nitride, ruthenium, nickel, cobalt. As shown in fig. 4 d, a hole is opened in the deposited layer at the bottom of the first etched structure. A second etch is performed on the hole at the bottom of the first etch structure until the top opening is reached to form the desired recess structure, as shown at e in fig. 4. A liner 8 is formed on the bottom deposition of the recessed structures using liner material, as shown at f in fig. 4. The lining material is preferably titanium nitride, titanium, tantalum nitride, ruthenium, nickel, cobalt. Further, it is preferable that the liner material and the deposition material are the same. The recessed structure is filled with a via material and polished as shown in fig. 4 g. Referring to g in fig. 4, the deposited layer 3 terminates at the turning point 9. The turning point 9 is the first etching depth of the first etching. In the present invention, the number of times of etching and the depth of each etching may be determined according to the depth of the recess structure and the substrate member disposed near the recess structure.
In a preferred embodiment of the present invention, when determining whether or not the substrate part is disposed in the vicinity of the recessed structure, if it is determined that the upper region, the middle region, and the lower region of the recessed structure are based on the height of the substrate part, the depth of the recessed structure, and the position of the liner layer, otherwise, it is determined that the upper region, the middle region, and the lower region of the recessed structure are based on the depth of the recessed structure and the position of the liner layer.
The selection of the etch depth will be described below in conjunction with fig. 5-6. As shown in fig. 5, when no substrate member is provided in the vicinity of the recessed structure, the recessed structure 5 is divided into an upper region 51, a middle region 52, and a lower region 53. As shown in fig. 5, T denotes the top of the recess structure, M denotes the middle of the recess structure, and B denotes the bottom of the recess structure. Preferably, T may be the top of the mask of the recess structure and B may be the bottom of the liner 9 of the recess structure. Wherein upper region 51 includes an upper 1/3 portion between T and M, lower region 53 includes a lower 1/3 portion between M and B, and middle region 52 includes a lower 2/3 portion between T and M and an upper 2/3 portion between M and B.
As shown in fig. 6, when the substrate member 20 is disposed near the recessed structure, the recessed structure 5 is also divided into an upper region 51, a middle region 52, and a lower region 53. As shown in fig. 5, T denotes the top of the recess structure, and M' denotes the height of the substrate part 20. Wherein upper region 51 includes an upper 1/3 portion between T and M ', lower region 53 includes a lower 1/3 portion between M' and B, and middle region 52 includes a lower 2/3 portion between T and M 'and an upper 2/3 portion between M' and B.
As shown in fig. 5-6, the turning point 9 is provided in the middle region 52, i.e. the first etching depth is provided in the middle region 52 and the second etching depth is provided in the lower region 53. The deposition layer 3 is located in the upper region 51 of the recessed structure 5; the sum of the thickness of the deposition layer 3 and the thickness of the liner layer 9 is greater than the thickness of the liner layer 9 in the lower region 53.
FIG. 7 is a schematic diagram of a process of forming a recess structure by etching a substrate with a recess structure etching method according to still another preferred embodiment of the present invention. In the preferred embodiment shown in fig. 7, a patterned hard mask is first provided on the substrate, as shown in a in fig. 7. As shown in fig. 7 b, the substrate is etched for the first time to form a first etched structure having a first depth. And as shown in c in fig. 7, a first deposition layer is formed on the side wall and the bottom of the first etching structure by using a deposition material, and then a second etching step is performed to form a second etching structure. After the second etching is finished, forming a second deposition layer on the sidewalls and the bottom of the second etched structure by using the deposition material again, and then performing a subsequent third etching step to finally form the recessed structure, as shown in d in fig. 7.
As shown in c of fig. 7, the height selection of the first etching can be determined by dividing the upper region 51, the middle region 52 and the lower region 53 based on the top portion T1 of the first etching structure, the middle portion M1 of the first etching structure, and the bottom portion B1 of the first etching structure, and the specific process can refer to the embodiment shown in fig. 5, which will not be described in detail herein.
As shown in d of fig. 7, the height selection of the second etching can be determined by dividing the upper region 51 ', the middle region 52 ' and the lower region 53 ' based on the turning point T2 of the first etching, the middle M2 of the second etching structure (which can also be the height of the substrate component as shown in fig. 6) and the bottom B2 of the second etching structure, and the specific process can refer to the embodiment shown in fig. 5 or 6, which will not be described in detail herein.
The invention also relates to a recess structure, which is preferably a via, a trench or a contact structure. But it could be any other recessed structure. These recessed structures are fabricated according to the methods described above.
The etching method of the concave structure is easy to control, can effectively protect the side wall of the substrate, thereby obtaining the concave structure with small opening and high yield, and is suitable for manufacturing various concave structures. In the field of semiconductor technology, via/contact/channel processes are one of the key processes affecting device yield. The etching method of the concave structure can help to control the shape of the through hole/contact/groove, because the side wall is protected, the side wall is almost not etched and retreated any more, the opening size/diameter of the top through hole is minimized, and the yield of the device can be greatly improved. The present invention can improve the basic process of via/contact/trench profile and thus can be used in many applications.
While the invention has been described with reference to specific embodiments, it will be understood by those skilled in the art that various changes may be made and equivalents may be substituted without departing from the scope of the invention. In addition, many modifications may be made to adapt a particular situation or material to the teachings of the invention without departing from its scope. Therefore, it is intended that the invention not be limited to the particular embodiment disclosed, but that the invention will include all embodiments falling within the scope of the appended claims.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (10)
1. A method for etching a recessed structure is characterized by comprising the following steps:
step S1, carrying out first etching on the substrate to form a first etching structure;
step S2, depositing materials are adopted to form deposition layers on the side wall and the bottom of the first etching structure;
step S3, destroying the deposition layer at the bottom of the first etching structure;
and step S4, performing second etching on the bottom of the first etching structure to form the concave structure.
2. The etching method of a recess structure according to claim 1, wherein an etching rate of the deposition material is lower than an etching rate of the substrate.
3. The etching method of the recess structure as claimed in claim 1, wherein the substrate is a silicon-based material, and the deposition material is selected from the group consisting of titanium nitride, titanium, tantalum nitride, ruthenium, nickel, and cobalt.
4. The etching method of a recess structure according to claim 1, wherein the thickness of the deposition layer is in a range of 1 angstrom to 10 nm.
5. The method for etching a recess structure according to any one of claims 1 to 3, further comprising:
step S5, forming a lining layer on the concave structure by adopting lining layer materials, filling the concave structure by adopting through hole materials and carrying out polishing treatment;
wherein the deposition material is the same as the liner material.
6. The etching method of the recessed structure according to claim 5, wherein the step S1 further comprises:
step S11, determining the etching times and each etching depth according to the depth of the concave structure and the substrate component arranged near the concave structure;
step S12, arranging a mask on the substrate;
and step S13, carrying out first etching on the substrate according to the first etching depth to form a first etching structure.
7. The etching method of the recessed structure according to claim 6, wherein the step S11 further comprises:
step S111, when judging whether the substrate component is arranged near the recessed structure, if so, determining an upper area, a middle area and a lower area of the recessed structure based on the height of the substrate component, the depth of the recessed structure and the position of the lining layer, otherwise, determining the upper area, the middle area and the lower area of the recessed structure based on the depth of the recessed structure and the position of the lining layer;
step S112, setting the first etching depth in the middle region and the second etching depth in the lower region.
8. The method of etching a recess structure according to claim 7, wherein the deposition layer is located in the upper region of the recess structure; the sum of the thickness of the deposition layer and the thickness of the liner layer is greater than the thickness of the liner layer in the lower region.
9. The method for etching a recess structure according to claim 1, further comprising returning to step S2 after the second etching is completed, and repeatedly performing steps S2 to S4 until the target depth of the recess structure is reached.
10. A recess structure manufactured by the method of etching a recess structure according to any one of claims 1 to 9.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1855382A (en) * | 2005-04-06 | 2006-11-01 | 亿恒科技股份公司 | Method for etching grooves in the semiconductor substrate |
| US20100173494A1 (en) * | 2007-06-09 | 2010-07-08 | Rolith, Inc | Method and apparatus for anisotropic etching |
| CN102398887A (en) * | 2010-09-14 | 2012-04-04 | 中微半导体设备(上海)有限公司 | Deep hole silicon etching method |
| CN104743496A (en) * | 2013-12-29 | 2015-07-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Deep silicon etching method and equipment for deep silicon etching |
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2020
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| CN1855382A (en) * | 2005-04-06 | 2006-11-01 | 亿恒科技股份公司 | Method for etching grooves in the semiconductor substrate |
| US20100173494A1 (en) * | 2007-06-09 | 2010-07-08 | Rolith, Inc | Method and apparatus for anisotropic etching |
| CN102398887A (en) * | 2010-09-14 | 2012-04-04 | 中微半导体设备(上海)有限公司 | Deep hole silicon etching method |
| CN104743496A (en) * | 2013-12-29 | 2015-07-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Deep silicon etching method and equipment for deep silicon etching |
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